Research paperTheoreticalComputed RamanPhotogalvanic effect in few layer grapheneZhaohang Li, Kainan Chang, Haoyu Li, Yuxuan Gao et al.arXiv·2026·arXiv:2602.20454AbstractWe systematically investigate the nonlinear photogalvanic effect in few-layer graphene with various stacking orders, including AA- and AB-stacked bilayers, and AAA-, ABA-, and ABC-stacked trilayers. Using a tight-binding model to describe the electronic states, the shift current conductivity and jerk current conductivity are calculated over a broad spectral range from terahertz to visible frequencies. Our symmetry analysis reveals that a nonvanishing shift current emerges only in ABA-stacked trilayer graphene due to its broken inversion symmetry, with a peak conductivity reaching approximately 1.21 × 10⁻¹³ A·m/V₂ at optimal doping. In contrast, the jerk current, permitted in all structures, requires an in-plane static electric field and exhibits pronounced spectral tunability with chemical potential. These findings establish a comprehensive symmetry–band–field coupling paradigm for nonlinear photocurrents in layered graphene and provide design principles for tunable, polarization-sensitive photodetection and energy-harvesting devices based on van der Waals heterostructures.Read more
AA-stacked bilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
AB-stacked bilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
AAA-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
ABA-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.1 propertySimulated Supercell DftCStudied MaterialExpand
ABC-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
Research paperTheoreticalComputed RamanPhotogalvanic effect in few layer grapheneZhaohang Li, Kainan Chang, Haoyu Li, Yuxuan Gao et al.arXiv·2026·arXiv:2602.20454AbstractWe systematically investigate the nonlinear photogalvanic effect in few-layer graphene with various stacking orders, including AA- and AB-stacked bilayers, and AAA-, ABA-, and ABC-stacked trilayers. Using a tight-binding model to describe the electronic states, the shift current conductivity and jerk current conductivity are calculated over a broad spectral range from terahertz to visible frequencies. Our symmetry analysis reveals that a nonvanishing shift current emerges only in ABA-stacked trilayer graphene due to its broken inversion symmetry, with a peak conductivity reaching approximately 1.21 × 10⁻¹³ A·m/V₂ at optimal doping. In contrast, the jerk current, permitted in all structures, requires an in-plane static electric field and exhibits pronounced spectral tunability with chemical potential. These findings establish a comprehensive symmetry–band–field coupling paradigm for nonlinear photocurrents in layered graphene and provide design principles for tunable, polarization-sensitive photodetection and energy-harvesting devices based on van der Waals heterostructures.Read more
AA-stacked bilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
AB-stacked bilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
AAA-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
ABA-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.1 propertySimulated Supercell DftCStudied MaterialExpand
ABC-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
Research paperTheoreticalComputed RamanPhotogalvanic effect in few layer grapheneZhaohang Li, Kainan Chang, Haoyu Li, Yuxuan Gao et al.arXiv·2026·arXiv:2602.20454AbstractWe systematically investigate the nonlinear photogalvanic effect in few-layer graphene with various stacking orders, including AA- and AB-stacked bilayers, and AAA-, ABA-, and ABC-stacked trilayers. Using a tight-binding model to describe the electronic states, the shift current conductivity and jerk current conductivity are calculated over a broad spectral range from terahertz to visible frequencies. Our symmetry analysis reveals that a nonvanishing shift current emerges only in ABA-stacked trilayer graphene due to its broken inversion symmetry, with a peak conductivity reaching approximately 1.21 × 10⁻¹³ A·m/V₂ at optimal doping. In contrast, the jerk current, permitted in all structures, requires an in-plane static electric field and exhibits pronounced spectral tunability with chemical potential. These findings establish a comprehensive symmetry–band–field coupling paradigm for nonlinear photocurrents in layered graphene and provide design principles for tunable, polarization-sensitive photodetection and energy-harvesting devices based on van der Waals heterostructures.Read more
AA-stacked bilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
AB-stacked bilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
AAA-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
ABA-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.1 propertySimulated Supercell DftCStudied MaterialExpand
ABC-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
Research paperTheoreticalComputed RamanPhotogalvanic effect in few layer grapheneZhaohang Li, Kainan Chang, Haoyu Li, Yuxuan Gao et al.arXiv·2026·arXiv:2602.20454AbstractWe systematically investigate the nonlinear photogalvanic effect in few-layer graphene with various stacking orders, including AA- and AB-stacked bilayers, and AAA-, ABA-, and ABC-stacked trilayers. Using a tight-binding model to describe the electronic states, the shift current conductivity and jerk current conductivity are calculated over a broad spectral range from terahertz to visible frequencies. Our symmetry analysis reveals that a nonvanishing shift current emerges only in ABA-stacked trilayer graphene due to its broken inversion symmetry, with a peak conductivity reaching approximately 1.21 × 10⁻¹³ A·m/V₂ at optimal doping. In contrast, the jerk current, permitted in all structures, requires an in-plane static electric field and exhibits pronounced spectral tunability with chemical potential. These findings establish a comprehensive symmetry–band–field coupling paradigm for nonlinear photocurrents in layered graphene and provide design principles for tunable, polarization-sensitive photodetection and energy-harvesting devices based on van der Waals heterostructures.Read more
AA-stacked bilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
AB-stacked bilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
AAA-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand
ABA-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.1 propertySimulated Supercell DftCStudied MaterialExpand
ABC-stacked trilayer graphene system modeled with a tight-binding Hamiltonian.No measurements recordedSimulated Supercell DftCStudied MaterialExpand