Patent
US 9,892,994A GRAPHENE BASED FILLER MATERIAL OF SUPERIOR THERMAL CONDUCTIVITY FOR CHIP ATTACHMENT IN MICROSTRUCTURE DEVICES
Mario Giovanni Scurati
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,892,994Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2A schematically illustrates a cross-sectional view of a microstructure device including a chip and a carrier substrate with an intermediate heat transfer layer including graphene flakes; 20
Figure 2B schematically illustrates a top view of a graphene flake;
Figures 2C and 2D schematically illustrate cross-sectional views of the microstructure device according to further illustrative embodiments, wherein a heat transfer layer with graphene flakes is provided across a 22 Gardere 0l-7345675 v.1 Customer No. 117381 Attorney Docket 140650-1101 significant …
Figures 2E and 2G schematically illustrate process steps for implementing a preferred spatial orientation of the graphene flakes by exposing the flakes to an external force field; 5
Figure 2F schematically illustrates a top view of a graphene flake, to which one or more molecules adhere to the flake in order to impart specific characteristics to the flake thereby allowing the flake to respond to an external force field;
Figures 2H and 2 1 schematically illustrate cross-sectional views of a 10 microstructure device upon forming a heat transfer layer having portions with differently spatially oriented graphene flakes;
Figures 2J and 2K schematically illustrates cross-sectional views of the microstructure device with a heat transfer layer having portions with different spatial orientation of the graphene flakes adapted to the heat 15 transfer requirements; and
Figure 3 schematically illustrates a cross-sectional view of a microstructure device comprising a plurality of chips in a stacked configuration with appropriately arranged filler materials having superior thermal conductivity based on graphene flakes.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: positioning a microstructure device chip above a surface of a substrate; and providing therebetween a filler material that is thermally conductive and comprises graphene flakes, wherein providing comprises depositing said filler material in a deformable state and exposing a first portion of said filler material in said deformable state to a first spatially oriented force field so as to allow graphene flakes in said first portion to take on a first averaged spatial orientation corresponding to said first force field; and curing said filler material so as to permanently set said first averaged spatial orientation. Currently amended
The method of claim 1, wherein said thermally conductive filler material comprises a glue substance incorporating therein said graphene flakes. Original
The method of claim 1, wherein providing comprises, prior to positioning said microstructure device chip above said surface, forming said filler material as a layer above a wafer that comprises a plurality of chips including said microstructure device chip. Original
The method of claim 1, wherein said thermally conductive filler material completely covers said surface. Currently amended
The method of claim 1 [[5]], further comprising exposing a second portion of said filler material to a second spatially oriented force field so as to allow graphene flakes in said second portion to take on a second averaged spatial orientation corresponding to said second force field, wherein curing further permanently sets said second averaged spatial orientation. Currently amended
. Canceled
. Canceled
A method, comprising: positioning a microstructure device chip above a surface of a substrate; and providing therebetween a filler material that is thermally conductive and comprises graphene flakes, wherein providing comprises: providing a first layer; and providing a second layer adjacent the first layer; wherein the first and second layer each comprise graphene flakes. Currently amended
The method of claim 8, wherein providing the first layer comprises: depositing a layer of said filler material in a deformable state; exposing said filler material in said deformable state to a first spatially oriented force field so as orient the graphene flakes in a first averaged spatial orientation corresponding to said first force field; and curing the layer. Original
A method, comprising: depositing a layer with a filler material that is thermally conductive and comprises graphene flakes on a substrate wafer; mounting a plurality of semiconductor device chips to the substrate wafer with the deposited layer positioned between each semiconductor device chip and the substrate wafer; and dicing the substrate wafer to produce a plurality of die structures, with each die structure including at least one semiconductor device chip attached to a diced portion of the substrate wafer by said deposited layer of filler material. Currently amended
The method of claim 14, wherein depositing comprises depositing said layer of filler material in a deformable state and exposing said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes with a first averaged spatial orientation corresponding to said first force field. Original
The method of claim 14, wherein depositing comprises: depositing said layer of filler material in a deformable state; exposing first portions of said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first portions with a first averaged spatial orientation corresponding to said first force field; and exposing second portions of said filler material in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second portions with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. Original
The method of claim 14, wherein depositing comprises: depositing a first layer of filler material that is thermally conductive and comprises first graphene flakes; exposing said filler material of the first layer in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first layer with a first averaged spatial orientation corresponding to said first force field; depositing a second layer of filler material that is thermally conductive and comprises second graphene fl akes; and exposing said filler material of the second layer in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second layer with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. Original
A method, comprising: depositing, onto a wafer that includes a plurality of semiconductor device integrated circuit chips, a layer with a filler material that is thermally conductive and comprises graphene flakes; and dicing the wafer to produce a plurality of individual integrated circuit chips, with each individual integrated circuit chip including a diced portion of the wafer covered by a diced portion of the deposited layer of filler material. New
The method of claim 21, wherein depositing comprises depositing said layer of filler material in a deformable state and exposing said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes with a first averaged spatial orientation corresponding to said first force field. New
The method of claim 21, wherein depositing comprises: depositing said layer of filler material in a deformable state; exposing first portions of said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first portions with a first averaged spatial orientation corresponding to said first force field; and exposing second portions of said filler material in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second portions with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. New
The method of claim 21, wherein depositing comprises: depositing a first layer of filler material that is thermally conductive and comprises first graphene flakes; exposing said filler material of the first layer in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first layer with a first averaged spatial orientation corresponding to said first force field; depositing a second layer of filler material that is thermally conductive and comprises second graphene fl akes; and exposing said filler material of the second layer in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second layer with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. New
Layer stacks claimed or described, ordered top of device to substrate.
microstructure device chip on substrate with graphene-flake filler
die structure with semiconductor chip attached to substrate wafer by graphene-flake filler layer
Materials described outside the worked examples.
thermally conductive filler material with graphene flakes
graphene flakes
glue substance incorporating graphene flakes
Patent
Atlas literature
Patent
US 9,892,994Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2A schematically illustrates a cross-sectional view of a microstructure device including a chip and a carrier substrate with an intermediate heat transfer layer including graphene flakes; 20
Figure 2B schematically illustrates a top view of a graphene flake;
Figures 2C and 2D schematically illustrate cross-sectional views of the microstructure device according to further illustrative embodiments, wherein a heat transfer layer with graphene flakes is provided across a 22 Gardere 0l-7345675 v.1 Customer No. 117381 Attorney Docket 140650-1101 significant …
Figures 2E and 2G schematically illustrate process steps for implementing a preferred spatial orientation of the graphene flakes by exposing the flakes to an external force field; 5
Figure 2F schematically illustrates a top view of a graphene flake, to which one or more molecules adhere to the flake in order to impart specific characteristics to the flake thereby allowing the flake to respond to an external force field;
Figures 2H and 2 1 schematically illustrate cross-sectional views of a 10 microstructure device upon forming a heat transfer layer having portions with differently spatially oriented graphene flakes;
Figures 2J and 2K schematically illustrates cross-sectional views of the microstructure device with a heat transfer layer having portions with different spatial orientation of the graphene flakes adapted to the heat 15 transfer requirements; and
Figure 3 schematically illustrates a cross-sectional view of a microstructure device comprising a plurality of chips in a stacked configuration with appropriately arranged filler materials having superior thermal conductivity based on graphene flakes.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: positioning a microstructure device chip above a surface of a substrate; and providing therebetween a filler material that is thermally conductive and comprises graphene flakes, wherein providing comprises depositing said filler material in a deformable state and exposing a first portion of said filler material in said deformable state to a first spatially oriented force field so as to allow graphene flakes in said first portion to take on a first averaged spatial orientation corresponding to said first force field; and curing said filler material so as to permanently set said first averaged spatial orientation. Currently amended
The method of claim 1, wherein said thermally conductive filler material comprises a glue substance incorporating therein said graphene flakes. Original
The method of claim 1, wherein providing comprises, prior to positioning said microstructure device chip above said surface, forming said filler material as a layer above a wafer that comprises a plurality of chips including said microstructure device chip. Original
The method of claim 1, wherein said thermally conductive filler material completely covers said surface. Currently amended
The method of claim 1 [[5]], further comprising exposing a second portion of said filler material to a second spatially oriented force field so as to allow graphene flakes in said second portion to take on a second averaged spatial orientation corresponding to said second force field, wherein curing further permanently sets said second averaged spatial orientation. Currently amended
. Canceled
. Canceled
A method, comprising: positioning a microstructure device chip above a surface of a substrate; and providing therebetween a filler material that is thermally conductive and comprises graphene flakes, wherein providing comprises: providing a first layer; and providing a second layer adjacent the first layer; wherein the first and second layer each comprise graphene flakes. Currently amended
The method of claim 8, wherein providing the first layer comprises: depositing a layer of said filler material in a deformable state; exposing said filler material in said deformable state to a first spatially oriented force field so as orient the graphene flakes in a first averaged spatial orientation corresponding to said first force field; and curing the layer. Original
A method, comprising: depositing a layer with a filler material that is thermally conductive and comprises graphene flakes on a substrate wafer; mounting a plurality of semiconductor device chips to the substrate wafer with the deposited layer positioned between each semiconductor device chip and the substrate wafer; and dicing the substrate wafer to produce a plurality of die structures, with each die structure including at least one semiconductor device chip attached to a diced portion of the substrate wafer by said deposited layer of filler material. Currently amended
The method of claim 14, wherein depositing comprises depositing said layer of filler material in a deformable state and exposing said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes with a first averaged spatial orientation corresponding to said first force field. Original
The method of claim 14, wherein depositing comprises: depositing said layer of filler material in a deformable state; exposing first portions of said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first portions with a first averaged spatial orientation corresponding to said first force field; and exposing second portions of said filler material in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second portions with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. Original
The method of claim 14, wherein depositing comprises: depositing a first layer of filler material that is thermally conductive and comprises first graphene flakes; exposing said filler material of the first layer in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first layer with a first averaged spatial orientation corresponding to said first force field; depositing a second layer of filler material that is thermally conductive and comprises second graphene fl akes; and exposing said filler material of the second layer in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second layer with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. Original
A method, comprising: depositing, onto a wafer that includes a plurality of semiconductor device integrated circuit chips, a layer with a filler material that is thermally conductive and comprises graphene flakes; and dicing the wafer to produce a plurality of individual integrated circuit chips, with each individual integrated circuit chip including a diced portion of the wafer covered by a diced portion of the deposited layer of filler material. New
The method of claim 21, wherein depositing comprises depositing said layer of filler material in a deformable state and exposing said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes with a first averaged spatial orientation corresponding to said first force field. New
The method of claim 21, wherein depositing comprises: depositing said layer of filler material in a deformable state; exposing first portions of said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first portions with a first averaged spatial orientation corresponding to said first force field; and exposing second portions of said filler material in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second portions with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. New
The method of claim 21, wherein depositing comprises: depositing a first layer of filler material that is thermally conductive and comprises first graphene flakes; exposing said filler material of the first layer in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first layer with a first averaged spatial orientation corresponding to said first force field; depositing a second layer of filler material that is thermally conductive and comprises second graphene fl akes; and exposing said filler material of the second layer in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second layer with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. New
Layer stacks claimed or described, ordered top of device to substrate.
microstructure device chip on substrate with graphene-flake filler
die structure with semiconductor chip attached to substrate wafer by graphene-flake filler layer
Materials described outside the worked examples.
thermally conductive filler material with graphene flakes
graphene flakes
glue substance incorporating graphene flakes
Patent
Atlas literature
Patent
US 9,892,994Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2A schematically illustrates a cross-sectional view of a microstructure device including a chip and a carrier substrate with an intermediate heat transfer layer including graphene flakes; 20
Figure 2B schematically illustrates a top view of a graphene flake;
Figures 2C and 2D schematically illustrate cross-sectional views of the microstructure device according to further illustrative embodiments, wherein a heat transfer layer with graphene flakes is provided across a 22 Gardere 0l-7345675 v.1 Customer No. 117381 Attorney Docket 140650-1101 significant …
Figures 2E and 2G schematically illustrate process steps for implementing a preferred spatial orientation of the graphene flakes by exposing the flakes to an external force field; 5
Figure 2F schematically illustrates a top view of a graphene flake, to which one or more molecules adhere to the flake in order to impart specific characteristics to the flake thereby allowing the flake to respond to an external force field;
Figures 2H and 2 1 schematically illustrate cross-sectional views of a 10 microstructure device upon forming a heat transfer layer having portions with differently spatially oriented graphene flakes;
Figures 2J and 2K schematically illustrates cross-sectional views of the microstructure device with a heat transfer layer having portions with different spatial orientation of the graphene flakes adapted to the heat 15 transfer requirements; and
Figure 3 schematically illustrates a cross-sectional view of a microstructure device comprising a plurality of chips in a stacked configuration with appropriately arranged filler materials having superior thermal conductivity based on graphene flakes.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: positioning a microstructure device chip above a surface of a substrate; and providing therebetween a filler material that is thermally conductive and comprises graphene flakes, wherein providing comprises depositing said filler material in a deformable state and exposing a first portion of said filler material in said deformable state to a first spatially oriented force field so as to allow graphene flakes in said first portion to take on a first averaged spatial orientation corresponding to said first force field; and curing said filler material so as to permanently set said first averaged spatial orientation. Currently amended
The method of claim 1, wherein said thermally conductive filler material comprises a glue substance incorporating therein said graphene flakes. Original
The method of claim 1, wherein providing comprises, prior to positioning said microstructure device chip above said surface, forming said filler material as a layer above a wafer that comprises a plurality of chips including said microstructure device chip. Original
The method of claim 1, wherein said thermally conductive filler material completely covers said surface. Currently amended
The method of claim 1 [[5]], further comprising exposing a second portion of said filler material to a second spatially oriented force field so as to allow graphene flakes in said second portion to take on a second averaged spatial orientation corresponding to said second force field, wherein curing further permanently sets said second averaged spatial orientation. Currently amended
. Canceled
. Canceled
A method, comprising: positioning a microstructure device chip above a surface of a substrate; and providing therebetween a filler material that is thermally conductive and comprises graphene flakes, wherein providing comprises: providing a first layer; and providing a second layer adjacent the first layer; wherein the first and second layer each comprise graphene flakes. Currently amended
The method of claim 8, wherein providing the first layer comprises: depositing a layer of said filler material in a deformable state; exposing said filler material in said deformable state to a first spatially oriented force field so as orient the graphene flakes in a first averaged spatial orientation corresponding to said first force field; and curing the layer. Original
A method, comprising: depositing a layer with a filler material that is thermally conductive and comprises graphene flakes on a substrate wafer; mounting a plurality of semiconductor device chips to the substrate wafer with the deposited layer positioned between each semiconductor device chip and the substrate wafer; and dicing the substrate wafer to produce a plurality of die structures, with each die structure including at least one semiconductor device chip attached to a diced portion of the substrate wafer by said deposited layer of filler material. Currently amended
The method of claim 14, wherein depositing comprises depositing said layer of filler material in a deformable state and exposing said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes with a first averaged spatial orientation corresponding to said first force field. Original
The method of claim 14, wherein depositing comprises: depositing said layer of filler material in a deformable state; exposing first portions of said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first portions with a first averaged spatial orientation corresponding to said first force field; and exposing second portions of said filler material in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second portions with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. Original
The method of claim 14, wherein depositing comprises: depositing a first layer of filler material that is thermally conductive and comprises first graphene flakes; exposing said filler material of the first layer in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first layer with a first averaged spatial orientation corresponding to said first force field; depositing a second layer of filler material that is thermally conductive and comprises second graphene fl akes; and exposing said filler material of the second layer in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second layer with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. Original
A method, comprising: depositing, onto a wafer that includes a plurality of semiconductor device integrated circuit chips, a layer with a filler material that is thermally conductive and comprises graphene flakes; and dicing the wafer to produce a plurality of individual integrated circuit chips, with each individual integrated circuit chip including a diced portion of the wafer covered by a diced portion of the deposited layer of filler material. New
The method of claim 21, wherein depositing comprises depositing said layer of filler material in a deformable state and exposing said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes with a first averaged spatial orientation corresponding to said first force field. New
The method of claim 21, wherein depositing comprises: depositing said layer of filler material in a deformable state; exposing first portions of said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first portions with a first averaged spatial orientation corresponding to said first force field; and exposing second portions of said filler material in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second portions with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. New
The method of claim 21, wherein depositing comprises: depositing a first layer of filler material that is thermally conductive and comprises first graphene flakes; exposing said filler material of the first layer in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first layer with a first averaged spatial orientation corresponding to said first force field; depositing a second layer of filler material that is thermally conductive and comprises second graphene fl akes; and exposing said filler material of the second layer in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second layer with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. New
Layer stacks claimed or described, ordered top of device to substrate.
microstructure device chip on substrate with graphene-flake filler
die structure with semiconductor chip attached to substrate wafer by graphene-flake filler layer
Materials described outside the worked examples.
thermally conductive filler material with graphene flakes
graphene flakes
glue substance incorporating graphene flakes
Patent
Atlas literature
Patent
US 9,892,994Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2A schematically illustrates a cross-sectional view of a microstructure device including a chip and a carrier substrate with an intermediate heat transfer layer including graphene flakes; 20
Figure 2B schematically illustrates a top view of a graphene flake;
Figures 2C and 2D schematically illustrate cross-sectional views of the microstructure device according to further illustrative embodiments, wherein a heat transfer layer with graphene flakes is provided across a 22 Gardere 0l-7345675 v.1 Customer No. 117381 Attorney Docket 140650-1101 significant …
Figures 2E and 2G schematically illustrate process steps for implementing a preferred spatial orientation of the graphene flakes by exposing the flakes to an external force field; 5
Figure 2F schematically illustrates a top view of a graphene flake, to which one or more molecules adhere to the flake in order to impart specific characteristics to the flake thereby allowing the flake to respond to an external force field;
Figures 2H and 2 1 schematically illustrate cross-sectional views of a 10 microstructure device upon forming a heat transfer layer having portions with differently spatially oriented graphene flakes;
Figures 2J and 2K schematically illustrates cross-sectional views of the microstructure device with a heat transfer layer having portions with different spatial orientation of the graphene flakes adapted to the heat 15 transfer requirements; and
Figure 3 schematically illustrates a cross-sectional view of a microstructure device comprising a plurality of chips in a stacked configuration with appropriately arranged filler materials having superior thermal conductivity based on graphene flakes.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: positioning a microstructure device chip above a surface of a substrate; and providing therebetween a filler material that is thermally conductive and comprises graphene flakes, wherein providing comprises depositing said filler material in a deformable state and exposing a first portion of said filler material in said deformable state to a first spatially oriented force field so as to allow graphene flakes in said first portion to take on a first averaged spatial orientation corresponding to said first force field; and curing said filler material so as to permanently set said first averaged spatial orientation. Currently amended
The method of claim 1, wherein said thermally conductive filler material comprises a glue substance incorporating therein said graphene flakes. Original
The method of claim 1, wherein providing comprises, prior to positioning said microstructure device chip above said surface, forming said filler material as a layer above a wafer that comprises a plurality of chips including said microstructure device chip. Original
The method of claim 1, wherein said thermally conductive filler material completely covers said surface. Currently amended
The method of claim 1 [[5]], further comprising exposing a second portion of said filler material to a second spatially oriented force field so as to allow graphene flakes in said second portion to take on a second averaged spatial orientation corresponding to said second force field, wherein curing further permanently sets said second averaged spatial orientation. Currently amended
. Canceled
. Canceled
A method, comprising: positioning a microstructure device chip above a surface of a substrate; and providing therebetween a filler material that is thermally conductive and comprises graphene flakes, wherein providing comprises: providing a first layer; and providing a second layer adjacent the first layer; wherein the first and second layer each comprise graphene flakes. Currently amended
The method of claim 8, wherein providing the first layer comprises: depositing a layer of said filler material in a deformable state; exposing said filler material in said deformable state to a first spatially oriented force field so as orient the graphene flakes in a first averaged spatial orientation corresponding to said first force field; and curing the layer. Original
A method, comprising: depositing a layer with a filler material that is thermally conductive and comprises graphene flakes on a substrate wafer; mounting a plurality of semiconductor device chips to the substrate wafer with the deposited layer positioned between each semiconductor device chip and the substrate wafer; and dicing the substrate wafer to produce a plurality of die structures, with each die structure including at least one semiconductor device chip attached to a diced portion of the substrate wafer by said deposited layer of filler material. Currently amended
The method of claim 14, wherein depositing comprises depositing said layer of filler material in a deformable state and exposing said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes with a first averaged spatial orientation corresponding to said first force field. Original
The method of claim 14, wherein depositing comprises: depositing said layer of filler material in a deformable state; exposing first portions of said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first portions with a first averaged spatial orientation corresponding to said first force field; and exposing second portions of said filler material in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second portions with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. Original
The method of claim 14, wherein depositing comprises: depositing a first layer of filler material that is thermally conductive and comprises first graphene flakes; exposing said filler material of the first layer in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first layer with a first averaged spatial orientation corresponding to said first force field; depositing a second layer of filler material that is thermally conductive and comprises second graphene fl akes; and exposing said filler material of the second layer in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second layer with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. Original
A method, comprising: depositing, onto a wafer that includes a plurality of semiconductor device integrated circuit chips, a layer with a filler material that is thermally conductive and comprises graphene flakes; and dicing the wafer to produce a plurality of individual integrated circuit chips, with each individual integrated circuit chip including a diced portion of the wafer covered by a diced portion of the deposited layer of filler material. New
The method of claim 21, wherein depositing comprises depositing said layer of filler material in a deformable state and exposing said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes with a first averaged spatial orientation corresponding to said first force field. New
The method of claim 21, wherein depositing comprises: depositing said layer of filler material in a deformable state; exposing first portions of said filler material in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first portions with a first averaged spatial orientation corresponding to said first force field; and exposing second portions of said filler material in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second portions with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. New
The method of claim 21, wherein depositing comprises: depositing a first layer of filler material that is thermally conductive and comprises first graphene flakes; exposing said filler material of the first layer in said deformable state to a first spatially oriented force field to orient the graphene flakes in the first layer with a first averaged spatial orientation corresponding to said first force field; depositing a second layer of filler material that is thermally conductive and comprises second graphene fl akes; and exposing said filler material of the second layer in said deformable state to a second spatially oriented force field to orient the graphene flakes in the second layer with a second averaged spatial orientation corresponding to said second force field; wherein the first and second averaged spatial orientations are different. New
Layer stacks claimed or described, ordered top of device to substrate.
microstructure device chip on substrate with graphene-flake filler
die structure with semiconductor chip attached to substrate wafer by graphene-flake filler layer
Materials described outside the worked examples.
thermally conductive filler material with graphene flakes
graphene flakes
glue substance incorporating graphene flakes