A PROCESS FOR SYNTHESIZING REDUCED GRAPHENE

S H YAM; of Tata Steel

Patent

Atlas literature

Patent

US 9,617,159

A PROCESS FOR SYNTHESIZING REDUCED GRAPHENE

S H YAM Kumar Choudhary, VIKAS Chandra Srivastava

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

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Worked examples

Embodiments described in the patent, grouped by the materials and process steps they use.

Example 1

description derived process summary

3 materials1 process step

Seedlac solution was made by adding 2g of seedlac in isopropanol (100-500 ml) at 60-90°C. The solution was coated over steel, copper, zinc, nickel, aluminum, and their alloys by dip coating followed by air drying at room temperature. Coating thickness was varied by number of dippings. Coated substrates were heated in an electro-heating furnace at 400-1200°C under controlled atmosphere of Ar/N₂/Ar-H₂/N₂-H₂ at 100-500 sccm for 10-120 minutes. Characterized using Raman spectroscopy, X-ray photoelectron spectroscopy, and electron microscopy.

Example 2

description derived process summary

4 materials1 process step

Seedlac solution prepared by adding 2g seedlac in isopropanol (100-500 ml) at 60-90°C. NiCl₂-seedlac solution made by adding NiCl₂ (0.001-0.1g) in seedlac solution (100-1000 ml). Solution coated over steel, copper, zinc, nickel, aluminum, alloys, and glass by dip coating followed by air drying at room temperature. Coated substrates heated at 400-1200°C under Ar/N₂/Ar-H₂/N₂-H₂ at 100-500 sccm for 10-120 minutes. Characterized using Raman spectroscopy and X-ray photoelectron spectroscopy.

Example 3

description derived process summary

2 materials1 process step

Seedlac solution made by adding 2g seedlac in isopropanol (100-500 ml) at 60-90°C. Solution coated over glass surface by dip coating followed by air drying at room temperature. Coating thickness varied by number of dippings. Heated at 400-1200°C under Ar/N₂/Ar-H₂/N₂-H₂ at 100-500 sccm for 10-120 minutes. Characterized using X-ray photoelectron spectroscopy and electron microscopy.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

reduced graphene oxide coating on metallic substrate

reduced graphene oxidecoating

substratesubstrate

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Xps C To O Ratio	—	reduced graphene oxide
Xrd Peak Fwhm	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

A PROCESS FOR SYNTHESIZING REDUCED GRAPHENE | Matter42 Literature