Patent
US 10,911,045A Segmented Direct Gate Drive Circuit of a Depletion Mode GaN Power Device
Xin MING
US
Copyright © 2026 Matter42. All rights reserved.
Patent
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US 10,911,045Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A segmented direct gate drive circuit of a depletion mode GaN power device, wherein an output signal of the segmented direct gate drive circuit is used to control charging and discharging of a gate voltage of the depletion mode GaN power device; the depletion mode GaN power device is turned off when a gate voltage is discharged to a negative voltage turn-off level, and turned on when the gate voltage is charged to a zero level; the segmented direct gate drive circuit comprises a fast charging module, a current mirror charging module, a gate voltage holding module and a discharging module; a fast charging module is used to charge the gate voltage of the GaN power device from the negative voltage turn-off level to a threshold voltage of the GaN power device; the fast charging module comprises a fast charging unit, a threshold setting unit and a one-out-of-two switching unit, the threshold setting unit comprises an adjustable resistor, a first capacitor, a first current mirror unit, a second current mirror unit, a first high voltage PMOS transistor, a second high voltage PMOS transistor, a fifth high voltage PMOS transistor, a sixth high voltage PMOS transistor, a fourth high voltage NMOS transistor and a fifth high voltage NMOS transistor, the first current mirror unit is used to mirror a bias current to obtain a first mirror current and a second mirror current; the first end of the adjustable resistor is grounded, and the second end of the adjustable resistor is connected to a source of the first high volta g e PM O S transistor; a source of the second high voltage PMOS transistor is connected to a gate and a drain of the first high voltage PMOS transistor, and a gate and a drain of the second high voltage PMOS transistor are interconnected and connected to gates of the fifth high voltage PMOS transistor, the fourth high voltage NMOS transistor and the fifth high voltage N M OS transistor and the first mirror current, and are connected via the first capacitor to a ground voltage of OV; the second current mirror unit is used to mirror the second mirror current to obtain a third mirror current; a gate of the sixth high voltage PMOS transistor is connected to sources of the fifth high voltage PMOS transistor and the fourth high voltage N M OS transistor and the third mirror current, a source of the sixth high voltage PMOS transistor is connected to the source of the fifth high voltage NMOS transistor and is used as an output terminal of the threshold setting unit, and a drain of the sixth high voltage PMOS transistor is connected to a drain of the fifth high voltage PMOS transistor and the negative voltage turn-off level; wherein drains of the fourth high voltage NMOS transistor and the fifth high voltage NMOS transistor are connected to the ground voltage; the one-out-of-two switching unit comprises a fourth resistor, a seventh high voltage PMOS transistor, a sixth high voltage NMOS transistor and a seventh high voltage NMOS transistor; wherein a gate of the seventh high voltage PMOS transistor is connected to a first control signal, a source of the seventh high voltage PMOS transistor is connected via the fourth resistor to the ground voltage, and a drain of the seventh high voltage PMOS transistor is connected to a gate and a drain of the sixth high voltage NMOS transistor, and a gate and a drain of the seventh high voltage NMOS transistor; the first control signal is a short pulse signal, a rising edge of which is triggered by a rising edge of an input signal of the segmented direct gate drive circuit; the drain of the sixth high voltage NMOS transistor is used as a first selection terminal of the one-out-of-two switching unit to connect to the output terminal of the threshold setting unit, and the drain of the seventh high voltage NMOS transistor is used as a second selection terminal of the one- out-of-two switching unit; the fast charging unit comprises a fifth resistor and an eighth high voltage NMOS transistor, a gate of the eighth high voltage NMOS transistor is connected to the second selection terminal of the one-out-of-two switching unit and one end of the fifth resistor, a drain of the eighth high voltage NMOS transistor is connected to the ground voltage, and a source of the eighth high voltage NMOS transistor is connected to the other end of the fifth resistor and is used as an output terminal of the fast charging module to connect to a gate of the depletion mode GaN power device; the current mirror charging module comprises N charging current mirror modules, where N is a positive integer greater than 1, and the N charging current mirror modules are respectively used to mirror an adjustable current under control of their corresponding gating signals; each of the charging current mirror modules mirror the adjustable current when its corresponding gating signal is valid, otherwise an output current value is zero; the currents mirrored by the N charging current mirror modules are collectively used to charge the gate voltage of the GaN power device; when the fast charging module charges the gate voltage of the GaN power device to the threshold voltage of the GaN power device, less than N of the charging current mirror modules are first turned on to charge the gate voltage of the GaN power device from the threshold voltage of the GaN power device to a Miller platform voltage of the GaN power device, and then the N charging current mirror modules are turned on to charge the gate voltage of the GaN power device from the Miller platform voltage of the GaN power device to the zero level; the gate voltage holding module is used to clamp the gate voltage of the GaN power device at the zero level from the time when the gate voltage of the GaN power device is charged by the current mirror charging module to the zero level until the gate voltage of the GaN power device starts to discharge; the discharging module comprises M discharge paths to discharge the gate voltage of the GaN power device, so that the gate voltage of the GaN power device is discharged from the zero level to the negative voltage turn-off level, where M is a positive integer greater than 1; a discharge speed of the gate voltage of the GaN power device is adjusted by controlling the gating of the M discharge paths.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the adjustable resistor comprises a first PMOS transistor, a second PMOS transistor, a first resistor, a second resistor and a third resistor; a gate of the first PMOS transistor is connected to a first trim control signal, a source of the first PMOS transistor is connected to one end of the first resistor and the ground voltage, and a drain of the first PMOS transistor is connected to the other end of the first resistor; a gate of the second PMOS transistor is connected to a second trim control signal, a source of the second PMOS transistor is connected to one end of the second resistor and the drain of the first PMOS transistor, and a drain of the second PMOS transistor is connected to the other end of the second resistor and connected via the third resistor to the source of the first high voltage PMOS transistor.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the gate voltage holding module comprises an eleventh high voltage PMOS transistor and a tenth resistor; a gate of the eleventh high voltage PMOS transistor is connected to a third control signal, a source of the eleventh high voltage PMOS transistor is connected to the ground voltage, and a drain of the eleventh high voltage PMOS transistor is connected via the tenth resistor to the gate of the depletion mode G aN power device; the third control signal is flipped to low when the gate voltage of the G aN power device is charged to the zero level, and is flipped to high when the gate voltage of the G aN power device starts to discharge.
The segmented direct gate drive circuit of a depletion mode G aN power device according to claim 1, wherein the charging current mirror module comprises a high bandwidth current mirror unit, a main charging path, a voltage clamp protection unit and a discharge protection switching unit, the high bandwidth current mirror unit comprises a first NAN D gate, a first inverter chain, a sixth resistor, a seventh resistor, a ninth resistor, a second capacitor, an eighth high voltage PMOS transistor, a ninth high voltage PMOS transistor, a tenth high voltage PMOS transistor, a ninth high voltage NMOS transistor, a tenth high voltage NMOS transistor, a fifteenth high voltage NMOS transistor, a fourth NMOS transistor and a fifth NMOS transistor; the first inverter chain comprises an odd number of cascaded inverters; a first input terminal of the first NAN D gate is connected to a second control signal, a second input terminal of the first NAN D gate is connected to a gating signal corresponding to the charging current mirror module, and an output terminal of the first NAN D gate is connected via the first inverter chain to a drain of the ninth high voltage NMOS transistor and a gate of the tenth high voltage NMOS transistor; a rising edge of the second control signal is synchronized with the rising edge of the input signal of the segmented direct gate drive circuit; the second control signal is flipped to low when the gate voltage of the G aN power device is charged to the zero level; a drain of the eighth high voltage PMOS transistor is connected to a drain of the tenth high voltage NMOS transistor and the gate of the tenth high voltage PMOS transistor, and is connected via the seventh resistor to a power supply voltage, a gate of the eighth high voltage PMOS transistor is connected to a gate of the ninth high voltage PMOS transistor and a source of the tenth high voltage PMOS transistor and is connected via the sixth resistor to the power supply voltage, and a source of the eighth high voltage PMOS transistor is connected to a source of the ninth high voltage PMOS transistor and the power supply voltage; a drain of the fifth NMOS transistor is connected to the gate and the source of the ninth high voltage NMOS transistor and the source of the tenth high voltage NMOS transistor, a gate of the fifth NMOS transistor is connected to a gate and a drain of the fourth NMOS transistor and the adjustable current and is connected via the second capacitor to the ground level, and a source of the fifth NMOS transistor is connected to a source of the fourth NMOS transistor and the ground level; the ninth resistor is connected between a drain of the tenth high voltage PMOS transistor and the ground level; a drain of the ninth high voltage PMOS transistor is connected to a gate and a drain of the fifteenth high voltage NMOS transistor; the main charging path comprises a sixteenth high voltage NMOS transistor; a width-to-length ratio of the sixteenth high voltage NMOS transistor is much larger than that of the fifteenth high voltage NMOS transistor; a gate of the sixteenth high voltage NMOS transistor is connected to the gate and the drain of the fifteenth high voltage NMOS transistor, a drain of the sixteenth high voltage NMOS transistor is connected to the ground level, and a source of the sixteenth high voltage NMOS transistor is connected to a source of the fifteenth high voltage NMOS transistor and is used as an output terminal of the charging current mirror module to connect to the gate of the depletion mode G aN power device; the discharge protection switching unit comprises a second inverter chain and a seventeenth high voltage NMOS transistor; the second inverter chain comprises an even number of cascaded inverters; an input terminal of the second inverter chain is connected to a fourth control signal, and an output terminal of the second inverter chain is connected to a gate of the seventeenth high voltage NMOS transistor; the fourth control signal is flipped to a low level when the gate voltage of the depletion mode G aN power device starts to charge, and the fourth control signal is flipped to a high level when the gate voltage of the depletion mode G aN power device starts to discharge; a drain of the seventeenth high voltage NMOS transistor is connected to the gate of the sixteenth high voltage NMOS transistor, and a source of the seventeenth high voltage NMOS transistor is connected to the negative voltage turn-off level; the voltage clamp protection unit comprises an eleventh high voltage NMOS transistor, a twelfth high voltage NMOS transistor, a thirteenth high voltage NMOS transistor, a fourteenth high voltage NMOS transistor and an eighth resistor, a gate and a source of the eleventh high voltage NMOS transistor are connected to one end of the eighth resistor, a source of the fourteenth high voltage NMOS transistor and the output terminal of the charging current mirror module, and a drain of the eleventh high voltage NMOS transistor is connected to a gate and a drain of the twelfth high voltage NMOS transistor, a drain of the fourteenth high voltage NMOS transistor and the gate of the sixteenth high voltage NMOS transistor; a gate and a drain of the thirteenth high voltage NMOS transistor are connected to a source of the twelfth high voltage NMOS transistor, and a source of the thirteenth high voltage NMOS transistor is connected to a gate of the fourteenth high voltage NMOS transistor and the other end of the eighth resistor.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the first current source comprises a first N M OS transistor, a second N M OS transistor, a third NMOS transistor, a first high voltage NMOS transistor, a second high voltage NMOS transistor and a third high voltage NMOS transistor, a gate and a drain of the first high voltage NMOS transistor is short-circuited and connected to gates of the second high voltage NMOS transistor and the third high voltage NMOS transistor and the bias current, and the source of the first high voltage NMOS transistor is connected to a gate and a drain of the first NMOS transistor and gates of the second NMOS transistor and the third NMOS transistor; a drain of the second high voltage NMOS transistor outputs the first mirror current, and a source of the second high voltage NMOS transistor is connected to a drain of the second NMOS transistor; a drain of the third high voltage NMOS transistor outputs the second mirror current, and a source of the third high voltage NMOS transistor is connected to a drain of the third NMOS transistor; sources of the first NMOS transistor, the second NMOS transistor and the third NMOS transistor are connected to the negative voltage turn-off level; the second current source comprises a third PMOS transistor, a fourth PMOS transistor, a third high voltage PMOS transistor and a fourth high voltage PMOS transistor; a gate and a drain of the third high voltage PMOS transistor are short-circuited and connected to a gate of the fourth high voltage PMOS transistor and the second mirror current, and a source of the third high voltage PMOS transistor is connected to a gate and a drain of the third PMOS transistor and a gate of the fourth PMOS transistor; a source of the fourth PMOS transistor is connected to a source of the third PMOS transistor, and a drain of the fourth PMOS transistor is connected to a source of the fourth high voltage PMOS transistor; a drain of the fourth high voltage PMOS transistor outputs the third mirror current.
Layer stacks claimed or described, ordered top of device to substrate.
segmented direct gate drive circuit for depletion mode GaN power device
No layer stack recorded.
Materials described outside the worked examples.
GaN (depletion mode)
GaN
AlGaN/GaN heterojunction
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 0–5 V | — |
Patent
Atlas literature
Patent
US 10,911,045Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A segmented direct gate drive circuit of a depletion mode GaN power device, wherein an output signal of the segmented direct gate drive circuit is used to control charging and discharging of a gate voltage of the depletion mode GaN power device; the depletion mode GaN power device is turned off when a gate voltage is discharged to a negative voltage turn-off level, and turned on when the gate voltage is charged to a zero level; the segmented direct gate drive circuit comprises a fast charging module, a current mirror charging module, a gate voltage holding module and a discharging module; a fast charging module is used to charge the gate voltage of the GaN power device from the negative voltage turn-off level to a threshold voltage of the GaN power device; the fast charging module comprises a fast charging unit, a threshold setting unit and a one-out-of-two switching unit, the threshold setting unit comprises an adjustable resistor, a first capacitor, a first current mirror unit, a second current mirror unit, a first high voltage PMOS transistor, a second high voltage PMOS transistor, a fifth high voltage PMOS transistor, a sixth high voltage PMOS transistor, a fourth high voltage NMOS transistor and a fifth high voltage NMOS transistor, the first current mirror unit is used to mirror a bias current to obtain a first mirror current and a second mirror current; the first end of the adjustable resistor is grounded, and the second end of the adjustable resistor is connected to a source of the first high volta g e PM O S transistor; a source of the second high voltage PMOS transistor is connected to a gate and a drain of the first high voltage PMOS transistor, and a gate and a drain of the second high voltage PMOS transistor are interconnected and connected to gates of the fifth high voltage PMOS transistor, the fourth high voltage NMOS transistor and the fifth high voltage N M OS transistor and the first mirror current, and are connected via the first capacitor to a ground voltage of OV; the second current mirror unit is used to mirror the second mirror current to obtain a third mirror current; a gate of the sixth high voltage PMOS transistor is connected to sources of the fifth high voltage PMOS transistor and the fourth high voltage N M OS transistor and the third mirror current, a source of the sixth high voltage PMOS transistor is connected to the source of the fifth high voltage NMOS transistor and is used as an output terminal of the threshold setting unit, and a drain of the sixth high voltage PMOS transistor is connected to a drain of the fifth high voltage PMOS transistor and the negative voltage turn-off level; wherein drains of the fourth high voltage NMOS transistor and the fifth high voltage NMOS transistor are connected to the ground voltage; the one-out-of-two switching unit comprises a fourth resistor, a seventh high voltage PMOS transistor, a sixth high voltage NMOS transistor and a seventh high voltage NMOS transistor; wherein a gate of the seventh high voltage PMOS transistor is connected to a first control signal, a source of the seventh high voltage PMOS transistor is connected via the fourth resistor to the ground voltage, and a drain of the seventh high voltage PMOS transistor is connected to a gate and a drain of the sixth high voltage NMOS transistor, and a gate and a drain of the seventh high voltage NMOS transistor; the first control signal is a short pulse signal, a rising edge of which is triggered by a rising edge of an input signal of the segmented direct gate drive circuit; the drain of the sixth high voltage NMOS transistor is used as a first selection terminal of the one-out-of-two switching unit to connect to the output terminal of the threshold setting unit, and the drain of the seventh high voltage NMOS transistor is used as a second selection terminal of the one- out-of-two switching unit; the fast charging unit comprises a fifth resistor and an eighth high voltage NMOS transistor, a gate of the eighth high voltage NMOS transistor is connected to the second selection terminal of the one-out-of-two switching unit and one end of the fifth resistor, a drain of the eighth high voltage NMOS transistor is connected to the ground voltage, and a source of the eighth high voltage NMOS transistor is connected to the other end of the fifth resistor and is used as an output terminal of the fast charging module to connect to a gate of the depletion mode GaN power device; the current mirror charging module comprises N charging current mirror modules, where N is a positive integer greater than 1, and the N charging current mirror modules are respectively used to mirror an adjustable current under control of their corresponding gating signals; each of the charging current mirror modules mirror the adjustable current when its corresponding gating signal is valid, otherwise an output current value is zero; the currents mirrored by the N charging current mirror modules are collectively used to charge the gate voltage of the GaN power device; when the fast charging module charges the gate voltage of the GaN power device to the threshold voltage of the GaN power device, less than N of the charging current mirror modules are first turned on to charge the gate voltage of the GaN power device from the threshold voltage of the GaN power device to a Miller platform voltage of the GaN power device, and then the N charging current mirror modules are turned on to charge the gate voltage of the GaN power device from the Miller platform voltage of the GaN power device to the zero level; the gate voltage holding module is used to clamp the gate voltage of the GaN power device at the zero level from the time when the gate voltage of the GaN power device is charged by the current mirror charging module to the zero level until the gate voltage of the GaN power device starts to discharge; the discharging module comprises M discharge paths to discharge the gate voltage of the GaN power device, so that the gate voltage of the GaN power device is discharged from the zero level to the negative voltage turn-off level, where M is a positive integer greater than 1; a discharge speed of the gate voltage of the GaN power device is adjusted by controlling the gating of the M discharge paths.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the adjustable resistor comprises a first PMOS transistor, a second PMOS transistor, a first resistor, a second resistor and a third resistor; a gate of the first PMOS transistor is connected to a first trim control signal, a source of the first PMOS transistor is connected to one end of the first resistor and the ground voltage, and a drain of the first PMOS transistor is connected to the other end of the first resistor; a gate of the second PMOS transistor is connected to a second trim control signal, a source of the second PMOS transistor is connected to one end of the second resistor and the drain of the first PMOS transistor, and a drain of the second PMOS transistor is connected to the other end of the second resistor and connected via the third resistor to the source of the first high voltage PMOS transistor.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the gate voltage holding module comprises an eleventh high voltage PMOS transistor and a tenth resistor; a gate of the eleventh high voltage PMOS transistor is connected to a third control signal, a source of the eleventh high voltage PMOS transistor is connected to the ground voltage, and a drain of the eleventh high voltage PMOS transistor is connected via the tenth resistor to the gate of the depletion mode G aN power device; the third control signal is flipped to low when the gate voltage of the G aN power device is charged to the zero level, and is flipped to high when the gate voltage of the G aN power device starts to discharge.
The segmented direct gate drive circuit of a depletion mode G aN power device according to claim 1, wherein the charging current mirror module comprises a high bandwidth current mirror unit, a main charging path, a voltage clamp protection unit and a discharge protection switching unit, the high bandwidth current mirror unit comprises a first NAN D gate, a first inverter chain, a sixth resistor, a seventh resistor, a ninth resistor, a second capacitor, an eighth high voltage PMOS transistor, a ninth high voltage PMOS transistor, a tenth high voltage PMOS transistor, a ninth high voltage NMOS transistor, a tenth high voltage NMOS transistor, a fifteenth high voltage NMOS transistor, a fourth NMOS transistor and a fifth NMOS transistor; the first inverter chain comprises an odd number of cascaded inverters; a first input terminal of the first NAN D gate is connected to a second control signal, a second input terminal of the first NAN D gate is connected to a gating signal corresponding to the charging current mirror module, and an output terminal of the first NAN D gate is connected via the first inverter chain to a drain of the ninth high voltage NMOS transistor and a gate of the tenth high voltage NMOS transistor; a rising edge of the second control signal is synchronized with the rising edge of the input signal of the segmented direct gate drive circuit; the second control signal is flipped to low when the gate voltage of the G aN power device is charged to the zero level; a drain of the eighth high voltage PMOS transistor is connected to a drain of the tenth high voltage NMOS transistor and the gate of the tenth high voltage PMOS transistor, and is connected via the seventh resistor to a power supply voltage, a gate of the eighth high voltage PMOS transistor is connected to a gate of the ninth high voltage PMOS transistor and a source of the tenth high voltage PMOS transistor and is connected via the sixth resistor to the power supply voltage, and a source of the eighth high voltage PMOS transistor is connected to a source of the ninth high voltage PMOS transistor and the power supply voltage; a drain of the fifth NMOS transistor is connected to the gate and the source of the ninth high voltage NMOS transistor and the source of the tenth high voltage NMOS transistor, a gate of the fifth NMOS transistor is connected to a gate and a drain of the fourth NMOS transistor and the adjustable current and is connected via the second capacitor to the ground level, and a source of the fifth NMOS transistor is connected to a source of the fourth NMOS transistor and the ground level; the ninth resistor is connected between a drain of the tenth high voltage PMOS transistor and the ground level; a drain of the ninth high voltage PMOS transistor is connected to a gate and a drain of the fifteenth high voltage NMOS transistor; the main charging path comprises a sixteenth high voltage NMOS transistor; a width-to-length ratio of the sixteenth high voltage NMOS transistor is much larger than that of the fifteenth high voltage NMOS transistor; a gate of the sixteenth high voltage NMOS transistor is connected to the gate and the drain of the fifteenth high voltage NMOS transistor, a drain of the sixteenth high voltage NMOS transistor is connected to the ground level, and a source of the sixteenth high voltage NMOS transistor is connected to a source of the fifteenth high voltage NMOS transistor and is used as an output terminal of the charging current mirror module to connect to the gate of the depletion mode G aN power device; the discharge protection switching unit comprises a second inverter chain and a seventeenth high voltage NMOS transistor; the second inverter chain comprises an even number of cascaded inverters; an input terminal of the second inverter chain is connected to a fourth control signal, and an output terminal of the second inverter chain is connected to a gate of the seventeenth high voltage NMOS transistor; the fourth control signal is flipped to a low level when the gate voltage of the depletion mode G aN power device starts to charge, and the fourth control signal is flipped to a high level when the gate voltage of the depletion mode G aN power device starts to discharge; a drain of the seventeenth high voltage NMOS transistor is connected to the gate of the sixteenth high voltage NMOS transistor, and a source of the seventeenth high voltage NMOS transistor is connected to the negative voltage turn-off level; the voltage clamp protection unit comprises an eleventh high voltage NMOS transistor, a twelfth high voltage NMOS transistor, a thirteenth high voltage NMOS transistor, a fourteenth high voltage NMOS transistor and an eighth resistor, a gate and a source of the eleventh high voltage NMOS transistor are connected to one end of the eighth resistor, a source of the fourteenth high voltage NMOS transistor and the output terminal of the charging current mirror module, and a drain of the eleventh high voltage NMOS transistor is connected to a gate and a drain of the twelfth high voltage NMOS transistor, a drain of the fourteenth high voltage NMOS transistor and the gate of the sixteenth high voltage NMOS transistor; a gate and a drain of the thirteenth high voltage NMOS transistor are connected to a source of the twelfth high voltage NMOS transistor, and a source of the thirteenth high voltage NMOS transistor is connected to a gate of the fourteenth high voltage NMOS transistor and the other end of the eighth resistor.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the first current source comprises a first N M OS transistor, a second N M OS transistor, a third NMOS transistor, a first high voltage NMOS transistor, a second high voltage NMOS transistor and a third high voltage NMOS transistor, a gate and a drain of the first high voltage NMOS transistor is short-circuited and connected to gates of the second high voltage NMOS transistor and the third high voltage NMOS transistor and the bias current, and the source of the first high voltage NMOS transistor is connected to a gate and a drain of the first NMOS transistor and gates of the second NMOS transistor and the third NMOS transistor; a drain of the second high voltage NMOS transistor outputs the first mirror current, and a source of the second high voltage NMOS transistor is connected to a drain of the second NMOS transistor; a drain of the third high voltage NMOS transistor outputs the second mirror current, and a source of the third high voltage NMOS transistor is connected to a drain of the third NMOS transistor; sources of the first NMOS transistor, the second NMOS transistor and the third NMOS transistor are connected to the negative voltage turn-off level; the second current source comprises a third PMOS transistor, a fourth PMOS transistor, a third high voltage PMOS transistor and a fourth high voltage PMOS transistor; a gate and a drain of the third high voltage PMOS transistor are short-circuited and connected to a gate of the fourth high voltage PMOS transistor and the second mirror current, and a source of the third high voltage PMOS transistor is connected to a gate and a drain of the third PMOS transistor and a gate of the fourth PMOS transistor; a source of the fourth PMOS transistor is connected to a source of the third PMOS transistor, and a drain of the fourth PMOS transistor is connected to a source of the fourth high voltage PMOS transistor; a drain of the fourth high voltage PMOS transistor outputs the third mirror current.
Layer stacks claimed or described, ordered top of device to substrate.
segmented direct gate drive circuit for depletion mode GaN power device
No layer stack recorded.
Materials described outside the worked examples.
GaN (depletion mode)
GaN
AlGaN/GaN heterojunction
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 0–5 V | — |
Patent
Atlas literature
Patent
US 10,911,045Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A segmented direct gate drive circuit of a depletion mode GaN power device, wherein an output signal of the segmented direct gate drive circuit is used to control charging and discharging of a gate voltage of the depletion mode GaN power device; the depletion mode GaN power device is turned off when a gate voltage is discharged to a negative voltage turn-off level, and turned on when the gate voltage is charged to a zero level; the segmented direct gate drive circuit comprises a fast charging module, a current mirror charging module, a gate voltage holding module and a discharging module; a fast charging module is used to charge the gate voltage of the GaN power device from the negative voltage turn-off level to a threshold voltage of the GaN power device; the fast charging module comprises a fast charging unit, a threshold setting unit and a one-out-of-two switching unit, the threshold setting unit comprises an adjustable resistor, a first capacitor, a first current mirror unit, a second current mirror unit, a first high voltage PMOS transistor, a second high voltage PMOS transistor, a fifth high voltage PMOS transistor, a sixth high voltage PMOS transistor, a fourth high voltage NMOS transistor and a fifth high voltage NMOS transistor, the first current mirror unit is used to mirror a bias current to obtain a first mirror current and a second mirror current; the first end of the adjustable resistor is grounded, and the second end of the adjustable resistor is connected to a source of the first high volta g e PM O S transistor; a source of the second high voltage PMOS transistor is connected to a gate and a drain of the first high voltage PMOS transistor, and a gate and a drain of the second high voltage PMOS transistor are interconnected and connected to gates of the fifth high voltage PMOS transistor, the fourth high voltage NMOS transistor and the fifth high voltage N M OS transistor and the first mirror current, and are connected via the first capacitor to a ground voltage of OV; the second current mirror unit is used to mirror the second mirror current to obtain a third mirror current; a gate of the sixth high voltage PMOS transistor is connected to sources of the fifth high voltage PMOS transistor and the fourth high voltage N M OS transistor and the third mirror current, a source of the sixth high voltage PMOS transistor is connected to the source of the fifth high voltage NMOS transistor and is used as an output terminal of the threshold setting unit, and a drain of the sixth high voltage PMOS transistor is connected to a drain of the fifth high voltage PMOS transistor and the negative voltage turn-off level; wherein drains of the fourth high voltage NMOS transistor and the fifth high voltage NMOS transistor are connected to the ground voltage; the one-out-of-two switching unit comprises a fourth resistor, a seventh high voltage PMOS transistor, a sixth high voltage NMOS transistor and a seventh high voltage NMOS transistor; wherein a gate of the seventh high voltage PMOS transistor is connected to a first control signal, a source of the seventh high voltage PMOS transistor is connected via the fourth resistor to the ground voltage, and a drain of the seventh high voltage PMOS transistor is connected to a gate and a drain of the sixth high voltage NMOS transistor, and a gate and a drain of the seventh high voltage NMOS transistor; the first control signal is a short pulse signal, a rising edge of which is triggered by a rising edge of an input signal of the segmented direct gate drive circuit; the drain of the sixth high voltage NMOS transistor is used as a first selection terminal of the one-out-of-two switching unit to connect to the output terminal of the threshold setting unit, and the drain of the seventh high voltage NMOS transistor is used as a second selection terminal of the one- out-of-two switching unit; the fast charging unit comprises a fifth resistor and an eighth high voltage NMOS transistor, a gate of the eighth high voltage NMOS transistor is connected to the second selection terminal of the one-out-of-two switching unit and one end of the fifth resistor, a drain of the eighth high voltage NMOS transistor is connected to the ground voltage, and a source of the eighth high voltage NMOS transistor is connected to the other end of the fifth resistor and is used as an output terminal of the fast charging module to connect to a gate of the depletion mode GaN power device; the current mirror charging module comprises N charging current mirror modules, where N is a positive integer greater than 1, and the N charging current mirror modules are respectively used to mirror an adjustable current under control of their corresponding gating signals; each of the charging current mirror modules mirror the adjustable current when its corresponding gating signal is valid, otherwise an output current value is zero; the currents mirrored by the N charging current mirror modules are collectively used to charge the gate voltage of the GaN power device; when the fast charging module charges the gate voltage of the GaN power device to the threshold voltage of the GaN power device, less than N of the charging current mirror modules are first turned on to charge the gate voltage of the GaN power device from the threshold voltage of the GaN power device to a Miller platform voltage of the GaN power device, and then the N charging current mirror modules are turned on to charge the gate voltage of the GaN power device from the Miller platform voltage of the GaN power device to the zero level; the gate voltage holding module is used to clamp the gate voltage of the GaN power device at the zero level from the time when the gate voltage of the GaN power device is charged by the current mirror charging module to the zero level until the gate voltage of the GaN power device starts to discharge; the discharging module comprises M discharge paths to discharge the gate voltage of the GaN power device, so that the gate voltage of the GaN power device is discharged from the zero level to the negative voltage turn-off level, where M is a positive integer greater than 1; a discharge speed of the gate voltage of the GaN power device is adjusted by controlling the gating of the M discharge paths.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the adjustable resistor comprises a first PMOS transistor, a second PMOS transistor, a first resistor, a second resistor and a third resistor; a gate of the first PMOS transistor is connected to a first trim control signal, a source of the first PMOS transistor is connected to one end of the first resistor and the ground voltage, and a drain of the first PMOS transistor is connected to the other end of the first resistor; a gate of the second PMOS transistor is connected to a second trim control signal, a source of the second PMOS transistor is connected to one end of the second resistor and the drain of the first PMOS transistor, and a drain of the second PMOS transistor is connected to the other end of the second resistor and connected via the third resistor to the source of the first high voltage PMOS transistor.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the gate voltage holding module comprises an eleventh high voltage PMOS transistor and a tenth resistor; a gate of the eleventh high voltage PMOS transistor is connected to a third control signal, a source of the eleventh high voltage PMOS transistor is connected to the ground voltage, and a drain of the eleventh high voltage PMOS transistor is connected via the tenth resistor to the gate of the depletion mode G aN power device; the third control signal is flipped to low when the gate voltage of the G aN power device is charged to the zero level, and is flipped to high when the gate voltage of the G aN power device starts to discharge.
The segmented direct gate drive circuit of a depletion mode G aN power device according to claim 1, wherein the charging current mirror module comprises a high bandwidth current mirror unit, a main charging path, a voltage clamp protection unit and a discharge protection switching unit, the high bandwidth current mirror unit comprises a first NAN D gate, a first inverter chain, a sixth resistor, a seventh resistor, a ninth resistor, a second capacitor, an eighth high voltage PMOS transistor, a ninth high voltage PMOS transistor, a tenth high voltage PMOS transistor, a ninth high voltage NMOS transistor, a tenth high voltage NMOS transistor, a fifteenth high voltage NMOS transistor, a fourth NMOS transistor and a fifth NMOS transistor; the first inverter chain comprises an odd number of cascaded inverters; a first input terminal of the first NAN D gate is connected to a second control signal, a second input terminal of the first NAN D gate is connected to a gating signal corresponding to the charging current mirror module, and an output terminal of the first NAN D gate is connected via the first inverter chain to a drain of the ninth high voltage NMOS transistor and a gate of the tenth high voltage NMOS transistor; a rising edge of the second control signal is synchronized with the rising edge of the input signal of the segmented direct gate drive circuit; the second control signal is flipped to low when the gate voltage of the G aN power device is charged to the zero level; a drain of the eighth high voltage PMOS transistor is connected to a drain of the tenth high voltage NMOS transistor and the gate of the tenth high voltage PMOS transistor, and is connected via the seventh resistor to a power supply voltage, a gate of the eighth high voltage PMOS transistor is connected to a gate of the ninth high voltage PMOS transistor and a source of the tenth high voltage PMOS transistor and is connected via the sixth resistor to the power supply voltage, and a source of the eighth high voltage PMOS transistor is connected to a source of the ninth high voltage PMOS transistor and the power supply voltage; a drain of the fifth NMOS transistor is connected to the gate and the source of the ninth high voltage NMOS transistor and the source of the tenth high voltage NMOS transistor, a gate of the fifth NMOS transistor is connected to a gate and a drain of the fourth NMOS transistor and the adjustable current and is connected via the second capacitor to the ground level, and a source of the fifth NMOS transistor is connected to a source of the fourth NMOS transistor and the ground level; the ninth resistor is connected between a drain of the tenth high voltage PMOS transistor and the ground level; a drain of the ninth high voltage PMOS transistor is connected to a gate and a drain of the fifteenth high voltage NMOS transistor; the main charging path comprises a sixteenth high voltage NMOS transistor; a width-to-length ratio of the sixteenth high voltage NMOS transistor is much larger than that of the fifteenth high voltage NMOS transistor; a gate of the sixteenth high voltage NMOS transistor is connected to the gate and the drain of the fifteenth high voltage NMOS transistor, a drain of the sixteenth high voltage NMOS transistor is connected to the ground level, and a source of the sixteenth high voltage NMOS transistor is connected to a source of the fifteenth high voltage NMOS transistor and is used as an output terminal of the charging current mirror module to connect to the gate of the depletion mode G aN power device; the discharge protection switching unit comprises a second inverter chain and a seventeenth high voltage NMOS transistor; the second inverter chain comprises an even number of cascaded inverters; an input terminal of the second inverter chain is connected to a fourth control signal, and an output terminal of the second inverter chain is connected to a gate of the seventeenth high voltage NMOS transistor; the fourth control signal is flipped to a low level when the gate voltage of the depletion mode G aN power device starts to charge, and the fourth control signal is flipped to a high level when the gate voltage of the depletion mode G aN power device starts to discharge; a drain of the seventeenth high voltage NMOS transistor is connected to the gate of the sixteenth high voltage NMOS transistor, and a source of the seventeenth high voltage NMOS transistor is connected to the negative voltage turn-off level; the voltage clamp protection unit comprises an eleventh high voltage NMOS transistor, a twelfth high voltage NMOS transistor, a thirteenth high voltage NMOS transistor, a fourteenth high voltage NMOS transistor and an eighth resistor, a gate and a source of the eleventh high voltage NMOS transistor are connected to one end of the eighth resistor, a source of the fourteenth high voltage NMOS transistor and the output terminal of the charging current mirror module, and a drain of the eleventh high voltage NMOS transistor is connected to a gate and a drain of the twelfth high voltage NMOS transistor, a drain of the fourteenth high voltage NMOS transistor and the gate of the sixteenth high voltage NMOS transistor; a gate and a drain of the thirteenth high voltage NMOS transistor are connected to a source of the twelfth high voltage NMOS transistor, and a source of the thirteenth high voltage NMOS transistor is connected to a gate of the fourteenth high voltage NMOS transistor and the other end of the eighth resistor.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the first current source comprises a first N M OS transistor, a second N M OS transistor, a third NMOS transistor, a first high voltage NMOS transistor, a second high voltage NMOS transistor and a third high voltage NMOS transistor, a gate and a drain of the first high voltage NMOS transistor is short-circuited and connected to gates of the second high voltage NMOS transistor and the third high voltage NMOS transistor and the bias current, and the source of the first high voltage NMOS transistor is connected to a gate and a drain of the first NMOS transistor and gates of the second NMOS transistor and the third NMOS transistor; a drain of the second high voltage NMOS transistor outputs the first mirror current, and a source of the second high voltage NMOS transistor is connected to a drain of the second NMOS transistor; a drain of the third high voltage NMOS transistor outputs the second mirror current, and a source of the third high voltage NMOS transistor is connected to a drain of the third NMOS transistor; sources of the first NMOS transistor, the second NMOS transistor and the third NMOS transistor are connected to the negative voltage turn-off level; the second current source comprises a third PMOS transistor, a fourth PMOS transistor, a third high voltage PMOS transistor and a fourth high voltage PMOS transistor; a gate and a drain of the third high voltage PMOS transistor are short-circuited and connected to a gate of the fourth high voltage PMOS transistor and the second mirror current, and a source of the third high voltage PMOS transistor is connected to a gate and a drain of the third PMOS transistor and a gate of the fourth PMOS transistor; a source of the fourth PMOS transistor is connected to a source of the third PMOS transistor, and a drain of the fourth PMOS transistor is connected to a source of the fourth high voltage PMOS transistor; a drain of the fourth high voltage PMOS transistor outputs the third mirror current.
Layer stacks claimed or described, ordered top of device to substrate.
segmented direct gate drive circuit for depletion mode GaN power device
No layer stack recorded.
Materials described outside the worked examples.
GaN (depletion mode)
GaN
AlGaN/GaN heterojunction
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 0–5 V | — |
Patent
Atlas literature
Patent
US 10,911,045Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A segmented direct gate drive circuit of a depletion mode GaN power device, wherein an output signal of the segmented direct gate drive circuit is used to control charging and discharging of a gate voltage of the depletion mode GaN power device; the depletion mode GaN power device is turned off when a gate voltage is discharged to a negative voltage turn-off level, and turned on when the gate voltage is charged to a zero level; the segmented direct gate drive circuit comprises a fast charging module, a current mirror charging module, a gate voltage holding module and a discharging module; a fast charging module is used to charge the gate voltage of the GaN power device from the negative voltage turn-off level to a threshold voltage of the GaN power device; the fast charging module comprises a fast charging unit, a threshold setting unit and a one-out-of-two switching unit, the threshold setting unit comprises an adjustable resistor, a first capacitor, a first current mirror unit, a second current mirror unit, a first high voltage PMOS transistor, a second high voltage PMOS transistor, a fifth high voltage PMOS transistor, a sixth high voltage PMOS transistor, a fourth high voltage NMOS transistor and a fifth high voltage NMOS transistor, the first current mirror unit is used to mirror a bias current to obtain a first mirror current and a second mirror current; the first end of the adjustable resistor is grounded, and the second end of the adjustable resistor is connected to a source of the first high volta g e PM O S transistor; a source of the second high voltage PMOS transistor is connected to a gate and a drain of the first high voltage PMOS transistor, and a gate and a drain of the second high voltage PMOS transistor are interconnected and connected to gates of the fifth high voltage PMOS transistor, the fourth high voltage NMOS transistor and the fifth high voltage N M OS transistor and the first mirror current, and are connected via the first capacitor to a ground voltage of OV; the second current mirror unit is used to mirror the second mirror current to obtain a third mirror current; a gate of the sixth high voltage PMOS transistor is connected to sources of the fifth high voltage PMOS transistor and the fourth high voltage N M OS transistor and the third mirror current, a source of the sixth high voltage PMOS transistor is connected to the source of the fifth high voltage NMOS transistor and is used as an output terminal of the threshold setting unit, and a drain of the sixth high voltage PMOS transistor is connected to a drain of the fifth high voltage PMOS transistor and the negative voltage turn-off level; wherein drains of the fourth high voltage NMOS transistor and the fifth high voltage NMOS transistor are connected to the ground voltage; the one-out-of-two switching unit comprises a fourth resistor, a seventh high voltage PMOS transistor, a sixth high voltage NMOS transistor and a seventh high voltage NMOS transistor; wherein a gate of the seventh high voltage PMOS transistor is connected to a first control signal, a source of the seventh high voltage PMOS transistor is connected via the fourth resistor to the ground voltage, and a drain of the seventh high voltage PMOS transistor is connected to a gate and a drain of the sixth high voltage NMOS transistor, and a gate and a drain of the seventh high voltage NMOS transistor; the first control signal is a short pulse signal, a rising edge of which is triggered by a rising edge of an input signal of the segmented direct gate drive circuit; the drain of the sixth high voltage NMOS transistor is used as a first selection terminal of the one-out-of-two switching unit to connect to the output terminal of the threshold setting unit, and the drain of the seventh high voltage NMOS transistor is used as a second selection terminal of the one- out-of-two switching unit; the fast charging unit comprises a fifth resistor and an eighth high voltage NMOS transistor, a gate of the eighth high voltage NMOS transistor is connected to the second selection terminal of the one-out-of-two switching unit and one end of the fifth resistor, a drain of the eighth high voltage NMOS transistor is connected to the ground voltage, and a source of the eighth high voltage NMOS transistor is connected to the other end of the fifth resistor and is used as an output terminal of the fast charging module to connect to a gate of the depletion mode GaN power device; the current mirror charging module comprises N charging current mirror modules, where N is a positive integer greater than 1, and the N charging current mirror modules are respectively used to mirror an adjustable current under control of their corresponding gating signals; each of the charging current mirror modules mirror the adjustable current when its corresponding gating signal is valid, otherwise an output current value is zero; the currents mirrored by the N charging current mirror modules are collectively used to charge the gate voltage of the GaN power device; when the fast charging module charges the gate voltage of the GaN power device to the threshold voltage of the GaN power device, less than N of the charging current mirror modules are first turned on to charge the gate voltage of the GaN power device from the threshold voltage of the GaN power device to a Miller platform voltage of the GaN power device, and then the N charging current mirror modules are turned on to charge the gate voltage of the GaN power device from the Miller platform voltage of the GaN power device to the zero level; the gate voltage holding module is used to clamp the gate voltage of the GaN power device at the zero level from the time when the gate voltage of the GaN power device is charged by the current mirror charging module to the zero level until the gate voltage of the GaN power device starts to discharge; the discharging module comprises M discharge paths to discharge the gate voltage of the GaN power device, so that the gate voltage of the GaN power device is discharged from the zero level to the negative voltage turn-off level, where M is a positive integer greater than 1; a discharge speed of the gate voltage of the GaN power device is adjusted by controlling the gating of the M discharge paths.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the adjustable resistor comprises a first PMOS transistor, a second PMOS transistor, a first resistor, a second resistor and a third resistor; a gate of the first PMOS transistor is connected to a first trim control signal, a source of the first PMOS transistor is connected to one end of the first resistor and the ground voltage, and a drain of the first PMOS transistor is connected to the other end of the first resistor; a gate of the second PMOS transistor is connected to a second trim control signal, a source of the second PMOS transistor is connected to one end of the second resistor and the drain of the first PMOS transistor, and a drain of the second PMOS transistor is connected to the other end of the second resistor and connected via the third resistor to the source of the first high voltage PMOS transistor.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the gate voltage holding module comprises an eleventh high voltage PMOS transistor and a tenth resistor; a gate of the eleventh high voltage PMOS transistor is connected to a third control signal, a source of the eleventh high voltage PMOS transistor is connected to the ground voltage, and a drain of the eleventh high voltage PMOS transistor is connected via the tenth resistor to the gate of the depletion mode G aN power device; the third control signal is flipped to low when the gate voltage of the G aN power device is charged to the zero level, and is flipped to high when the gate voltage of the G aN power device starts to discharge.
The segmented direct gate drive circuit of a depletion mode G aN power device according to claim 1, wherein the charging current mirror module comprises a high bandwidth current mirror unit, a main charging path, a voltage clamp protection unit and a discharge protection switching unit, the high bandwidth current mirror unit comprises a first NAN D gate, a first inverter chain, a sixth resistor, a seventh resistor, a ninth resistor, a second capacitor, an eighth high voltage PMOS transistor, a ninth high voltage PMOS transistor, a tenth high voltage PMOS transistor, a ninth high voltage NMOS transistor, a tenth high voltage NMOS transistor, a fifteenth high voltage NMOS transistor, a fourth NMOS transistor and a fifth NMOS transistor; the first inverter chain comprises an odd number of cascaded inverters; a first input terminal of the first NAN D gate is connected to a second control signal, a second input terminal of the first NAN D gate is connected to a gating signal corresponding to the charging current mirror module, and an output terminal of the first NAN D gate is connected via the first inverter chain to a drain of the ninth high voltage NMOS transistor and a gate of the tenth high voltage NMOS transistor; a rising edge of the second control signal is synchronized with the rising edge of the input signal of the segmented direct gate drive circuit; the second control signal is flipped to low when the gate voltage of the G aN power device is charged to the zero level; a drain of the eighth high voltage PMOS transistor is connected to a drain of the tenth high voltage NMOS transistor and the gate of the tenth high voltage PMOS transistor, and is connected via the seventh resistor to a power supply voltage, a gate of the eighth high voltage PMOS transistor is connected to a gate of the ninth high voltage PMOS transistor and a source of the tenth high voltage PMOS transistor and is connected via the sixth resistor to the power supply voltage, and a source of the eighth high voltage PMOS transistor is connected to a source of the ninth high voltage PMOS transistor and the power supply voltage; a drain of the fifth NMOS transistor is connected to the gate and the source of the ninth high voltage NMOS transistor and the source of the tenth high voltage NMOS transistor, a gate of the fifth NMOS transistor is connected to a gate and a drain of the fourth NMOS transistor and the adjustable current and is connected via the second capacitor to the ground level, and a source of the fifth NMOS transistor is connected to a source of the fourth NMOS transistor and the ground level; the ninth resistor is connected between a drain of the tenth high voltage PMOS transistor and the ground level; a drain of the ninth high voltage PMOS transistor is connected to a gate and a drain of the fifteenth high voltage NMOS transistor; the main charging path comprises a sixteenth high voltage NMOS transistor; a width-to-length ratio of the sixteenth high voltage NMOS transistor is much larger than that of the fifteenth high voltage NMOS transistor; a gate of the sixteenth high voltage NMOS transistor is connected to the gate and the drain of the fifteenth high voltage NMOS transistor, a drain of the sixteenth high voltage NMOS transistor is connected to the ground level, and a source of the sixteenth high voltage NMOS transistor is connected to a source of the fifteenth high voltage NMOS transistor and is used as an output terminal of the charging current mirror module to connect to the gate of the depletion mode G aN power device; the discharge protection switching unit comprises a second inverter chain and a seventeenth high voltage NMOS transistor; the second inverter chain comprises an even number of cascaded inverters; an input terminal of the second inverter chain is connected to a fourth control signal, and an output terminal of the second inverter chain is connected to a gate of the seventeenth high voltage NMOS transistor; the fourth control signal is flipped to a low level when the gate voltage of the depletion mode G aN power device starts to charge, and the fourth control signal is flipped to a high level when the gate voltage of the depletion mode G aN power device starts to discharge; a drain of the seventeenth high voltage NMOS transistor is connected to the gate of the sixteenth high voltage NMOS transistor, and a source of the seventeenth high voltage NMOS transistor is connected to the negative voltage turn-off level; the voltage clamp protection unit comprises an eleventh high voltage NMOS transistor, a twelfth high voltage NMOS transistor, a thirteenth high voltage NMOS transistor, a fourteenth high voltage NMOS transistor and an eighth resistor, a gate and a source of the eleventh high voltage NMOS transistor are connected to one end of the eighth resistor, a source of the fourteenth high voltage NMOS transistor and the output terminal of the charging current mirror module, and a drain of the eleventh high voltage NMOS transistor is connected to a gate and a drain of the twelfth high voltage NMOS transistor, a drain of the fourteenth high voltage NMOS transistor and the gate of the sixteenth high voltage NMOS transistor; a gate and a drain of the thirteenth high voltage NMOS transistor are connected to a source of the twelfth high voltage NMOS transistor, and a source of the thirteenth high voltage NMOS transistor is connected to a gate of the fourteenth high voltage NMOS transistor and the other end of the eighth resistor.
The segmented direct gate drive circuit of a depletion mode GaN power device according to claim 1, wherein the first current source comprises a first N M OS transistor, a second N M OS transistor, a third NMOS transistor, a first high voltage NMOS transistor, a second high voltage NMOS transistor and a third high voltage NMOS transistor, a gate and a drain of the first high voltage NMOS transistor is short-circuited and connected to gates of the second high voltage NMOS transistor and the third high voltage NMOS transistor and the bias current, and the source of the first high voltage NMOS transistor is connected to a gate and a drain of the first NMOS transistor and gates of the second NMOS transistor and the third NMOS transistor; a drain of the second high voltage NMOS transistor outputs the first mirror current, and a source of the second high voltage NMOS transistor is connected to a drain of the second NMOS transistor; a drain of the third high voltage NMOS transistor outputs the second mirror current, and a source of the third high voltage NMOS transistor is connected to a drain of the third NMOS transistor; sources of the first NMOS transistor, the second NMOS transistor and the third NMOS transistor are connected to the negative voltage turn-off level; the second current source comprises a third PMOS transistor, a fourth PMOS transistor, a third high voltage PMOS transistor and a fourth high voltage PMOS transistor; a gate and a drain of the third high voltage PMOS transistor are short-circuited and connected to a gate of the fourth high voltage PMOS transistor and the second mirror current, and a source of the third high voltage PMOS transistor is connected to a gate and a drain of the third PMOS transistor and a gate of the fourth PMOS transistor; a source of the fourth PMOS transistor is connected to a source of the third PMOS transistor, and a drain of the fourth PMOS transistor is connected to a source of the fourth high voltage PMOS transistor; a drain of the fourth high voltage PMOS transistor outputs the third mirror current.
Layer stacks claimed or described, ordered top of device to substrate.
segmented direct gate drive circuit for depletion mode GaN power device
No layer stack recorded.
Materials described outside the worked examples.
GaN (depletion mode)
GaN
AlGaN/GaN heterojunction
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 0–5 V | — |
p-GaN
p-GaN
p-GaN
p-GaN