Patent
US 9,159,784ALUMINUM GALLIUM NITRIDE ETCH STOP LAYER FOR GALLIUM NITRIDE BASED DEVICES
Linda Romano, Hui Nie, Andrew P. Edwards, Isik C. Kizilyalli et al.
EPOWERSOFT, INC.·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,159,784Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, an epitaxial layer 120 is coupled to AlGaN etch stop layer 114. In the illustrated embodiment, epitaxial layer 120 is a heavily doped p-type layer …
FIG. 2A, a substrate 210, an epitaxial layer 212, which will provide a drift region of n-type GaN material for the device, and an AlGaN barrier layer 214 are …
FIG. 3 is a simplified flowchart illustrating a method of fabricating edge termination structures in gallium arsenide (GaN) materials according to an embodiment …
FIG. 4 is a simplified flowchart illustrating a method of fabricating a I II -nitride HEMT according to an embodiment of the present invention. The method 400 …
FIG. 5 is a simplified flowchart illustrating a method of processing I II -nitride materials according to an embodiment of the present invention. The method 500 …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure comprising: a I II -nitride substrate having a first side and a second side opposing the first side, wherein the I II -nitride substrate is characterized by a first conductivity type and a first dopant concentration; a I II -nitride epitaxial layer of the first conductivity type coupled to the first surface of the I II -nitride substrate; a first metallic structure electrically coupled to the second surface of the III- nitride substrate; an AlGaN epitaxial layer having a first side coupled to the I II -nitride epitaxial layer of the first conductivity type; and a I II -nitride epitaxial structure of a second conductivity type coupled to the AlGaN epitaxial layer on a second side of the AlGaN epitaxially epitaxial layer, the second side being opposite the first side, wherein the I II -nitride epitaxial structure comprises at least one edge termination structure.
The semiconductor structure of claim 1 further comprising a Schottky contact including a second metallic structure coupled to a portion of the AlGaN epitaxial layer.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by a thickness less than 30 nm.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by a dopant concentration of greater than 1 x 10 7 cm -3.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by an aluminum mole fraction between 0.01 and 0.50.
The semiconductor structure of claim 1 further comprising a metallic field plate coupled to the at least one edge termination structure.
The semiconductor structure of claim 1 wherein the at least one edge termination structure circumscribes a semiconductor device.
The semiconductor structure of claim 1 wherein: the at least one edge termination structure comprises three or more edge termination structures with a plurality of spacings between each of the edge termination structures; a first spacing is located closer to a semiconductor device than a second spacing; and a width of the first spacing is smaller than a width of the second spacing.
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Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with edge termination structure
p-GaN enhancement mode HEMT
Materials described outside the worked examples.
III-nitride substrate
AlGaN epitaxial layer
AlGaN
III-nitride epitaxial structure of second conductivity type
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A, an epitaxial layer 120 is coupled to AlGaN etch stop layer 114. In the illustrated embodiment, epitaxial layer 120 is a heavily doped p-type layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN absorption edge | — | AlN |
AlGaN absorption coefficient above/below band edge | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,159,784Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, an epitaxial layer 120 is coupled to AlGaN etch stop layer 114. In the illustrated embodiment, epitaxial layer 120 is a heavily doped p-type layer …
FIG. 2A, a substrate 210, an epitaxial layer 212, which will provide a drift region of n-type GaN material for the device, and an AlGaN barrier layer 214 are …
FIG. 3 is a simplified flowchart illustrating a method of fabricating edge termination structures in gallium arsenide (GaN) materials according to an embodiment …
FIG. 4 is a simplified flowchart illustrating a method of fabricating a I II -nitride HEMT according to an embodiment of the present invention. The method 400 …
FIG. 5 is a simplified flowchart illustrating a method of processing I II -nitride materials according to an embodiment of the present invention. The method 500 …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure comprising: a I II -nitride substrate having a first side and a second side opposing the first side, wherein the I II -nitride substrate is characterized by a first conductivity type and a first dopant concentration; a I II -nitride epitaxial layer of the first conductivity type coupled to the first surface of the I II -nitride substrate; a first metallic structure electrically coupled to the second surface of the III- nitride substrate; an AlGaN epitaxial layer having a first side coupled to the I II -nitride epitaxial layer of the first conductivity type; and a I II -nitride epitaxial structure of a second conductivity type coupled to the AlGaN epitaxial layer on a second side of the AlGaN epitaxially epitaxial layer, the second side being opposite the first side, wherein the I II -nitride epitaxial structure comprises at least one edge termination structure.
The semiconductor structure of claim 1 further comprising a Schottky contact including a second metallic structure coupled to a portion of the AlGaN epitaxial layer.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by a thickness less than 30 nm.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by a dopant concentration of greater than 1 x 10 7 cm -3.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by an aluminum mole fraction between 0.01 and 0.50.
The semiconductor structure of claim 1 further comprising a metallic field plate coupled to the at least one edge termination structure.
The semiconductor structure of claim 1 wherein the at least one edge termination structure circumscribes a semiconductor device.
The semiconductor structure of claim 1 wherein: the at least one edge termination structure comprises three or more edge termination structures with a plurality of spacings between each of the edge termination structures; a first spacing is located closer to a semiconductor device than a second spacing; and a width of the first spacing is smaller than a width of the second spacing.
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Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with edge termination structure
p-GaN enhancement mode HEMT
Materials described outside the worked examples.
III-nitride substrate
AlGaN epitaxial layer
AlGaN
III-nitride epitaxial structure of second conductivity type
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A, an epitaxial layer 120 is coupled to AlGaN etch stop layer 114. In the illustrated embodiment, epitaxial layer 120 is a heavily doped p-type layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN absorption edge | — | AlN |
AlGaN absorption coefficient above/below band edge | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,159,784Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, an epitaxial layer 120 is coupled to AlGaN etch stop layer 114. In the illustrated embodiment, epitaxial layer 120 is a heavily doped p-type layer …
FIG. 2A, a substrate 210, an epitaxial layer 212, which will provide a drift region of n-type GaN material for the device, and an AlGaN barrier layer 214 are …
FIG. 3 is a simplified flowchart illustrating a method of fabricating edge termination structures in gallium arsenide (GaN) materials according to an embodiment …
FIG. 4 is a simplified flowchart illustrating a method of fabricating a I II -nitride HEMT according to an embodiment of the present invention. The method 400 …
FIG. 5 is a simplified flowchart illustrating a method of processing I II -nitride materials according to an embodiment of the present invention. The method 500 …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure comprising: a I II -nitride substrate having a first side and a second side opposing the first side, wherein the I II -nitride substrate is characterized by a first conductivity type and a first dopant concentration; a I II -nitride epitaxial layer of the first conductivity type coupled to the first surface of the I II -nitride substrate; a first metallic structure electrically coupled to the second surface of the III- nitride substrate; an AlGaN epitaxial layer having a first side coupled to the I II -nitride epitaxial layer of the first conductivity type; and a I II -nitride epitaxial structure of a second conductivity type coupled to the AlGaN epitaxial layer on a second side of the AlGaN epitaxially epitaxial layer, the second side being opposite the first side, wherein the I II -nitride epitaxial structure comprises at least one edge termination structure.
The semiconductor structure of claim 1 further comprising a Schottky contact including a second metallic structure coupled to a portion of the AlGaN epitaxial layer.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by a thickness less than 30 nm.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by a dopant concentration of greater than 1 x 10 7 cm -3.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by an aluminum mole fraction between 0.01 and 0.50.
The semiconductor structure of claim 1 further comprising a metallic field plate coupled to the at least one edge termination structure.
The semiconductor structure of claim 1 wherein the at least one edge termination structure circumscribes a semiconductor device.
The semiconductor structure of claim 1 wherein: the at least one edge termination structure comprises three or more edge termination structures with a plurality of spacings between each of the edge termination structures; a first spacing is located closer to a semiconductor device than a second spacing; and a width of the first spacing is smaller than a width of the second spacing.
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Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with edge termination structure
p-GaN enhancement mode HEMT
Materials described outside the worked examples.
III-nitride substrate
AlGaN epitaxial layer
AlGaN
III-nitride epitaxial structure of second conductivity type
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A, an epitaxial layer 120 is coupled to AlGaN etch stop layer 114. In the illustrated embodiment, epitaxial layer 120 is a heavily doped p-type layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN absorption edge | — | AlN |
AlGaN absorption coefficient above/below band edge | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,159,784Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, an epitaxial layer 120 is coupled to AlGaN etch stop layer 114. In the illustrated embodiment, epitaxial layer 120 is a heavily doped p-type layer …
FIG. 2A, a substrate 210, an epitaxial layer 212, which will provide a drift region of n-type GaN material for the device, and an AlGaN barrier layer 214 are …
FIG. 3 is a simplified flowchart illustrating a method of fabricating edge termination structures in gallium arsenide (GaN) materials according to an embodiment …
FIG. 4 is a simplified flowchart illustrating a method of fabricating a I II -nitride HEMT according to an embodiment of the present invention. The method 400 …
FIG. 5 is a simplified flowchart illustrating a method of processing I II -nitride materials according to an embodiment of the present invention. The method 500 …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor structure comprising: a I II -nitride substrate having a first side and a second side opposing the first side, wherein the I II -nitride substrate is characterized by a first conductivity type and a first dopant concentration; a I II -nitride epitaxial layer of the first conductivity type coupled to the first surface of the I II -nitride substrate; a first metallic structure electrically coupled to the second surface of the III- nitride substrate; an AlGaN epitaxial layer having a first side coupled to the I II -nitride epitaxial layer of the first conductivity type; and a I II -nitride epitaxial structure of a second conductivity type coupled to the AlGaN epitaxial layer on a second side of the AlGaN epitaxially epitaxial layer, the second side being opposite the first side, wherein the I II -nitride epitaxial structure comprises at least one edge termination structure.
The semiconductor structure of claim 1 further comprising a Schottky contact including a second metallic structure coupled to a portion of the AlGaN epitaxial layer.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by a thickness less than 30 nm.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by a dopant concentration of greater than 1 x 10 7 cm -3.
The semiconductor structure of claim 1 wherein the AlGaN epitaxial layer is characterized by an aluminum mole fraction between 0.01 and 0.50.
The semiconductor structure of claim 1 further comprising a metallic field plate coupled to the at least one edge termination structure.
The semiconductor structure of claim 1 wherein the at least one edge termination structure circumscribes a semiconductor device.
The semiconductor structure of claim 1 wherein: the at least one edge termination structure comprises three or more edge termination structures with a plurality of spacings between each of the edge termination structures; a first spacing is located closer to a semiconductor device than a second spacing; and a width of the first spacing is smaller than a width of the second spacing.
- 31.. Page 3 of 5 canceled
canceled
canceled
canceled
canceled
canceled
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Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with edge termination structure
p-GaN enhancement mode HEMT
Materials described outside the worked examples.
III-nitride substrate
AlGaN epitaxial layer
AlGaN
III-nitride epitaxial structure of second conductivity type
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 A, an epitaxial layer 120 is coupled to AlGaN etch stop layer 114. In the illustrated embodiment, epitaxial layer 120 is a heavily doped p-type layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
AlN absorption edge | — | AlN |
AlGaN absorption coefficient above/below band edge | — |
Related documents with shared materials, methods, properties, or citations.
Schottky barrier diode with p-GaN guard rings
n-type GaN substrate
GaN
AlN
FIG. 2A, a substrate 210, an epitaxial layer 212, which will provide a drift region of n-type GaN material for the device, and an AlGaN barrier layer 214 are …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
Thickness | 200–365 nm | — |
Thickness | 1–30 nm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 365 nm | — |
Thickness | ≥ 80000 cm | — |
Temperature | ≥ 800 °C | — |
Duration | ≥ 3 minutes | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 10 nm | — |
Schottky barrier diode with p-GaN guard rings
n-type GaN substrate
GaN
AlN
FIG. 2A, a substrate 210, an epitaxial layer 212, which will provide a drift region of n-type GaN material for the device, and an AlGaN barrier layer 214 are …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
Thickness | 200–365 nm | — |
Thickness | 1–30 nm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 365 nm | — |
Thickness | ≥ 80000 cm | — |
Temperature | ≥ 800 °C | — |
Duration | ≥ 3 minutes | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 10 nm | — |
Schottky barrier diode with p-GaN guard rings
n-type GaN substrate
GaN
AlN
FIG. 2A, a substrate 210, an epitaxial layer 212, which will provide a drift region of n-type GaN material for the device, and an AlGaN barrier layer 214 are …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
Thickness | 200–365 nm | — |
Thickness | 1–30 nm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 365 nm | — |
Thickness | ≥ 80000 cm | — |
Temperature | ≥ 800 °C | — |
Duration | ≥ 3 minutes | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 10 nm | — |
Schottky barrier diode with p-GaN guard rings
n-type GaN substrate
GaN
AlN
FIG. 2A, a substrate 210, an epitaxial layer 212, which will provide a drift region of n-type GaN material for the device, and an AlGaN barrier layer 214 are …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
FIG. 6 is a simplified graph of illustrating absorption coefficients for AlGaN with different concentrations of Al (up to 50 %). DETAILED DESCRIPTION OF SPECIFIC …
Thickness | 200–365 nm | — |
Thickness | 1–30 nm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 365 nm | — |
Thickness | ≥ 80000 cm | — |
Temperature | ≥ 800 °C | — |
Duration | ≥ 3 minutes | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 10 nm | — |