DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR

Edward A. Beam III

Patent

Atlas literature

Patent

US 9,640,650

DOPED GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTOR

Edward A. Beam III, Jinqiao Xie

TriQuint Semiconductor, Inc.·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

17 independent · 7 dependent

1
Independent
1-8. Cancelled canceled
2
Independent
canceled
3
Independent
canceled
4
Independent
canceled
5
Independent
canceled
6
Independent
canceled
7
Independent
canceled
8
Independent
canceled
9
IndependentAlGaNAlGaNGaNdual-heterojunction AlGaN/GaN HEMT (apparatus)
An apparatus comprising: a ﬁrst aluminum gallium nitride (AlGaN) barrier layer that comprises a ﬁrst AlGaN sublayer and a ﬁrst AlGaN spacer sublayer, and a ﬁrst doped component between the ﬁrst AlGaN sublayer and the AlGaN spacer sublayer a gallium nitride (GaN) channel layer coupled with the ﬁrst barrier layer to form a ﬁrst heterojunction; a second AlGaN barrier layer coupled with the channel layer to form a second heterojunction, wherein the ﬁrst or second AlGaN barrier layer comprises [[an]] a second AlGaN sublayer and [[an]] a second AlGaN spacer sublayer[[;]]2 and a second doped component between the second AlGaN sublayer and the second AlGaN spacer sublayer.
1. 15
  Dependent← claim 9AlGaNAlGaNdual-heterojunction AlGaN/GaN HEMT (apparatus)
  The apparatus of claim 9, wherein the ﬁrst AlGaN barrier layer includes an aluminum concentration of approximately 15% and the second AlGaN barrier layer includes an aluminum concentration of approximately 4%.
10
Independent
Cancelled canceled
11
Independentdual-heterojunction AlGaN/GaN HEMT (apparatus)
The apparatus of claim 1110]] 9, wherein the ﬁrst and second doped components include ﬁrst and second doped layers, respectively.
1. 12
  Dependent← claim 11AlGaN:Gedual-heterojunction AlGaN/GaN HEMT (apparatus)
  The apparatus of claim 11, wherein the ﬁrst doped layer includes an aluminum concentration of approximately 15%, a germanium doping concentration of approximately 5 x 10 19 cm⁻³ or greater, and a thickness of approximately 10 angstroms.
2. 13
  Dependent← claim 11AlGaN:Gedual-heterojunction AlGaN/GaN HEMT (apparatus)
  The apparatus of claim 11, wherein the second doped layer includes an aluminum concentration of approximately 4%, a germanium doping concentration of approximately 5 x 19 cm⁻³ or greater, and a thickness of approximately 10 angstroms.
14
Independentdual-heterojunction AlGaN/GaN HEMT (apparatus)
The apparatus of claim 1110]] 9, wherein the ﬁrst and second doped components include ﬁrst and second doping pulses.
16
Independent
16-18. Cancelled canceled
17
Independent
canceled
18
Independent
canceled
19
IndependentAlGaNAlGaNGaNdual-heterojunction AlGaN/GaN HEMT (apparatus)
A method comprising: forming a ﬁrst aluminum gallium nitride (AlGaN) barrier layer on a substrate, wherein the ﬁrst AlGaN barrier layer comprises a ﬁrst AlGaN sublayer and a ﬁrst AlGaN spacer sublayer, and; forming a ﬁrst doped component between the ﬁrst AlGaN sublayer and the AlGaN spacer sublayer; forming a gallium nitride (GaN) channel on the ﬁrst AlGaN barrier layer; forming a second AlGaN barrier layer that comprises [[an]] a second AlGaN sublayer and [[an]] a second AlGaN spacer sublayer on the GaN channel; and forming a second doped component between the second AlGaN sublayer and the second AlGaN spacer sublayer.
1. 20
  Dependent← claim 19AlGaN:Gedual-heterojunction AlGaN/GaN HEMT (apparatus)
  The method of claim 19, wherein forming the ﬁrst doped component includes: forming a doped layer with a doping concentration of approximately 5 x 10 1 9 cm⁻³ or greater.
2. 21
  Dependent← claim 19dual-heterojunction AlGaN/GaN HEMT (apparatus)
  The method of claim 19, wherein forming the ﬁrst doped component includes: forming a doped pulse.
22
IndependentAlGaNAlGaNGaNdual-heterojunction AlGaN/GaN HEMT in RF power amplifier system
(Allowed) A system comprising: 3 Attorney Docket No. 2867-1542 Application No. 14/157,245 a transceiver to generate RF signals; and a power ampliﬁer module coupled with the transceiver to amplify the RF signals from the transceiver and to provide ampliﬁed RF signals to an antenna switch module, wherein the power ampliﬁer module includes a high-electron mobility transistor (HEMT) comp ri sing: a substrate; a ﬁrst aluminum gallium nitride (AlGaN) barrier layer disposed on the substrate, and comprising a ﬁrst AlGaN sublayer and a ﬁrst AlGaN spacer sublayer; a ﬁrst doped component between the ﬁrst AlGaN sublayer and the ﬁrst AlGaN spacer sublayer; a channel layer disposed on the ﬁrst AlGaN sublayer; a second aluminum gallium nitride (AlGaN) barrier layer disposed on the channel layer, and comprising a second AlGaN sublayer and a second AlGaN spacer sublayer; and a second doped component between the second AlGaN sublayer and the second AlGaN spacer sublayer.
1. 23
  Dependent← claim 22Gedual-heterojunction AlGaN/GaN HEMT in RF power amplifier system
  (Allowed) The system of claim 22, wherein the ﬁrst doped component and the second doped component are both germanium.
2. 24
  Dependent← claim 22AlGaNdual-heterojunction AlGaN/GaN HEMT in RF power amplifier system
  (Allowed) The system of claim 22, wherein at least one of the ﬁrst AlGaN barrier layer and the second AlGaN barrier layer includes an aluminum concentration of approximately 15%. 4

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

dual-heterojunction AlGaN/GaN HEMT (apparatus)

AlGaNsecond barrier layer sublayer

AlGaN:Gesecond doped component

AlGaNsecond barrier spacer sublayer

GaNchannel

AlGaNfirst barrier spacer sublayer

AlGaN:Gefirst doped component

Materials

Materials described outside the worked examples.

first AlGaN barrier layer (approximately 15% Al)

AlGaN

Barrier Layer

gallium nitride channel layer

GaN

Channel Layer

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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