Patent
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Patent
US 12,609,527 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of an ESD protection circuit using GaN-based devices in accordance with one embodiment of the present invention;
FIG. 2 is a schematic diagram of an ESD protection circuit using GaN-based devices in accordance with another embodiment of the present invention;
FIG. 3 is a schematic cross-section of a GaN-based capacitor in accordance with one embodiment of the present invention;
FIG. 4 is a schematic cross-section of a MIM capacitor in accordance with one embodiment of the present invention;
FIG. 5 is a schematic cross-section of a GaN-based resistor in accordance with one embodiment of the present invention;
FIG. 6 is a schematic cross-section of a GaN-based lateral field effect rectifier (LFER) in accordance with one embodi- ment of the present invention; and
FIG. 7 is a schematic cross-section of a LV-HEMT in accordance with one embodiment of the present invention. Relative dimensions and proportions of parts of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrostatic discharge protection circuit using gal-lium nitride devices, comprising: a power high electron mobility transistor with a gate, a source and a drain, said source and said drain are coupled respectively to a first reference voltage and a second reference voltage; and an electrostatic discharge protection block, comprising: a first sub-block, comprising: a first two-dimensional electron gas resistor with one terminal coupled to said first reference voltage; a first trigger with one terminal coupled to another terminal of said first two-dimensional electron gas resistor and with another terminal coupled to said gate, wherein said first trigger comprises at least one lateral field effect rectifier in serial connec-tion, and each said lateral field effect rectifier comprises: a gallium nitride substrate; an aluminum gallium nitride layer on said gallium nitride substrate; a p-type gallium nitride layer on said aluminum gallium nitride layer and coupled with a first anode; and a first cathode and a second anode on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer, wherein said first anode is coupled to said second anode; and a first low-voltage high electron mobility transistor with a first gate, a first source and a first drain, said first gate is coupled to said another terminal of said first two-dimensional electron gas resistor and said terminal of said first trigger, and said first drain is coupled to said gate; and a second sub-block, comprising: a second two-dimensional electron gas resistor with one terminal coupled to said gate; a second trigger with one terminal coupled to another terminal of said second two-dimensional electron gas resistor and with another terminal coupled to said first reference voltage; and a second low-voltage high electron mobility transis-tor with a second gate, a second source and a second drain, said second gate is coupled to said terminal of said second trigger and said another terminal of said second two-dimensional electron gas resistor, and said second drain is coupled to said first source of said first low-voltage high electron mobility transistor, and said second source is coupled to said first reference voltage.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger is a gallium nitride capacitor, comprising: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with an third anode; and a second cathode on said gallium nitride substrate and said aluminum gallium nitride layer at one side of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger is a metal-insulator-metal capacitor, comprising: said gallium nitride substrate; an ion implant isolation layer on said gallium nitride substrate; a passivation layer on said ion implant isolation layer; an anode metal layer in said passivation layer; and a cathode metal layer on said passivation layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger comprises at least one lateral field effect rectifier in serial connection, and each said lateral field effect rectifier comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with a third anode; and 10 a second cathode and a fourth anode on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer, wherein said third anode is coupled to said fourth anode.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, further comprising a main two-dimensional electron gas resistor with one terminal coupled to said gate and with another terminal coupled to said terminal of said second two-dimensional electron gas resistor, said another terminal of said first trigger and said first drain.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first two-dimensional electron gas resistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; and a high-voltage terminal and a low-voltage terminal on said gallium nitride substrate and said aluminum gal-lium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second two-dimensional electron gas resistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; and a high-voltage terminal and a low-voltage terminal on said gallium nitride substrate and said aluminum gal-lium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first low-voltage high electron mobility transistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with said first gate; and said first source and said first drain on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second low-voltage high electron mobility transistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with said second gate; and said second source and said second drain on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first two-dimensional electron gas resistor, said first trigger, said first low-voltage high electron mobility transistor, said second two-dimensional electron gas resistor, said second trigger and said second low-voltage high electron mobility transis-tor share the same said gallium nitride substrate and the same said aluminum gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first trigger, said second trigger, said first low-voltage high electron mobility transistor and said second low-voltage high elec-tron mobility transistor share the same said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first trigger has a threshold voltage, and when a voltage of said another terminal of said first trigger is greater than a voltage of said terminal of said first trigger and a voltage difference ther-ebetween exceeds said threshold voltage of said first trigger, said first trigger conducts; and said second low-voltage high electron mobility transistor has a threshold voltage, and when a voltage of said second gate of said second low-voltage high electron mobility transistor is greater than a voltage of said second source and a voltage of said second drain and when a voltage difference therebetween exceeds said threshold voltage of said second low-voltage high electron mobility transistor, said second low-voltage high electron mobility transistor conducts, and said threshold voltage of said first trigger is greater than said threshold voltage of said second low-voltage high electron mobility transistor.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger has a threshold voltage, and when a voltage of said another terminal of said second trigger is greater than a voltage of said terminal of said second trigger and a voltage difference therebetween exceeds said threshold voltage of said second trigger, said second trigger conducts; and said first low-voltage high electron mobility transistor has a threshold voltage, and when a voltage of said first gate of said first low-voltage high electron mobility transistor is greater than a voltage of said first source and a voltage of said first drain and when a voltage difference therebetween exceeds said threshold voltage of said first low-voltage high electron mobility transistor, said first low-voltage high elec-tron mobility transistor conducts, and said threshold voltage of said second trigger is greater than said threshold voltage of said first low-voltage high electron mobility transistor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
power high electron mobility transistor (E-HEMT)
first two-dimensional electron gas resistor
first low-voltage high electron mobility transistor (first LV-HEMT)
Materials described outside the worked examples.
gallium nitride substrate
GaN
aluminum gallium nitride layer
AlGaN
Patents and literature cited by this patent (applicant and examiner references).
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US 12,609,527 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of an ESD protection circuit using GaN-based devices in accordance with one embodiment of the present invention;
FIG. 2 is a schematic diagram of an ESD protection circuit using GaN-based devices in accordance with another embodiment of the present invention;
FIG. 3 is a schematic cross-section of a GaN-based capacitor in accordance with one embodiment of the present invention;
FIG. 4 is a schematic cross-section of a MIM capacitor in accordance with one embodiment of the present invention;
FIG. 5 is a schematic cross-section of a GaN-based resistor in accordance with one embodiment of the present invention;
FIG. 6 is a schematic cross-section of a GaN-based lateral field effect rectifier (LFER) in accordance with one embodi- ment of the present invention; and
FIG. 7 is a schematic cross-section of a LV-HEMT in accordance with one embodiment of the present invention. Relative dimensions and proportions of parts of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrostatic discharge protection circuit using gal-lium nitride devices, comprising: a power high electron mobility transistor with a gate, a source and a drain, said source and said drain are coupled respectively to a first reference voltage and a second reference voltage; and an electrostatic discharge protection block, comprising: a first sub-block, comprising: a first two-dimensional electron gas resistor with one terminal coupled to said first reference voltage; a first trigger with one terminal coupled to another terminal of said first two-dimensional electron gas resistor and with another terminal coupled to said gate, wherein said first trigger comprises at least one lateral field effect rectifier in serial connec-tion, and each said lateral field effect rectifier comprises: a gallium nitride substrate; an aluminum gallium nitride layer on said gallium nitride substrate; a p-type gallium nitride layer on said aluminum gallium nitride layer and coupled with a first anode; and a first cathode and a second anode on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer, wherein said first anode is coupled to said second anode; and a first low-voltage high electron mobility transistor with a first gate, a first source and a first drain, said first gate is coupled to said another terminal of said first two-dimensional electron gas resistor and said terminal of said first trigger, and said first drain is coupled to said gate; and a second sub-block, comprising: a second two-dimensional electron gas resistor with one terminal coupled to said gate; a second trigger with one terminal coupled to another terminal of said second two-dimensional electron gas resistor and with another terminal coupled to said first reference voltage; and a second low-voltage high electron mobility transis-tor with a second gate, a second source and a second drain, said second gate is coupled to said terminal of said second trigger and said another terminal of said second two-dimensional electron gas resistor, and said second drain is coupled to said first source of said first low-voltage high electron mobility transistor, and said second source is coupled to said first reference voltage.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger is a gallium nitride capacitor, comprising: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with an third anode; and a second cathode on said gallium nitride substrate and said aluminum gallium nitride layer at one side of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger is a metal-insulator-metal capacitor, comprising: said gallium nitride substrate; an ion implant isolation layer on said gallium nitride substrate; a passivation layer on said ion implant isolation layer; an anode metal layer in said passivation layer; and a cathode metal layer on said passivation layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger comprises at least one lateral field effect rectifier in serial connection, and each said lateral field effect rectifier comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with a third anode; and 10 a second cathode and a fourth anode on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer, wherein said third anode is coupled to said fourth anode.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, further comprising a main two-dimensional electron gas resistor with one terminal coupled to said gate and with another terminal coupled to said terminal of said second two-dimensional electron gas resistor, said another terminal of said first trigger and said first drain.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first two-dimensional electron gas resistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; and a high-voltage terminal and a low-voltage terminal on said gallium nitride substrate and said aluminum gal-lium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second two-dimensional electron gas resistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; and a high-voltage terminal and a low-voltage terminal on said gallium nitride substrate and said aluminum gal-lium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first low-voltage high electron mobility transistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with said first gate; and said first source and said first drain on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second low-voltage high electron mobility transistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with said second gate; and said second source and said second drain on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first two-dimensional electron gas resistor, said first trigger, said first low-voltage high electron mobility transistor, said second two-dimensional electron gas resistor, said second trigger and said second low-voltage high electron mobility transis-tor share the same said gallium nitride substrate and the same said aluminum gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first trigger, said second trigger, said first low-voltage high electron mobility transistor and said second low-voltage high elec-tron mobility transistor share the same said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first trigger has a threshold voltage, and when a voltage of said another terminal of said first trigger is greater than a voltage of said terminal of said first trigger and a voltage difference ther-ebetween exceeds said threshold voltage of said first trigger, said first trigger conducts; and said second low-voltage high electron mobility transistor has a threshold voltage, and when a voltage of said second gate of said second low-voltage high electron mobility transistor is greater than a voltage of said second source and a voltage of said second drain and when a voltage difference therebetween exceeds said threshold voltage of said second low-voltage high electron mobility transistor, said second low-voltage high electron mobility transistor conducts, and said threshold voltage of said first trigger is greater than said threshold voltage of said second low-voltage high electron mobility transistor.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger has a threshold voltage, and when a voltage of said another terminal of said second trigger is greater than a voltage of said terminal of said second trigger and a voltage difference therebetween exceeds said threshold voltage of said second trigger, said second trigger conducts; and said first low-voltage high electron mobility transistor has a threshold voltage, and when a voltage of said first gate of said first low-voltage high electron mobility transistor is greater than a voltage of said first source and a voltage of said first drain and when a voltage difference therebetween exceeds said threshold voltage of said first low-voltage high electron mobility transistor, said first low-voltage high elec-tron mobility transistor conducts, and said threshold voltage of said second trigger is greater than said threshold voltage of said first low-voltage high electron mobility transistor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
power high electron mobility transistor (E-HEMT)
first two-dimensional electron gas resistor
first low-voltage high electron mobility transistor (first LV-HEMT)
Materials described outside the worked examples.
gallium nitride substrate
GaN
aluminum gallium nitride layer
AlGaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 12,609,527 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of an ESD protection circuit using GaN-based devices in accordance with one embodiment of the present invention;
FIG. 2 is a schematic diagram of an ESD protection circuit using GaN-based devices in accordance with another embodiment of the present invention;
FIG. 3 is a schematic cross-section of a GaN-based capacitor in accordance with one embodiment of the present invention;
FIG. 4 is a schematic cross-section of a MIM capacitor in accordance with one embodiment of the present invention;
FIG. 5 is a schematic cross-section of a GaN-based resistor in accordance with one embodiment of the present invention;
FIG. 6 is a schematic cross-section of a GaN-based lateral field effect rectifier (LFER) in accordance with one embodi- ment of the present invention; and
FIG. 7 is a schematic cross-section of a LV-HEMT in accordance with one embodiment of the present invention. Relative dimensions and proportions of parts of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrostatic discharge protection circuit using gal-lium nitride devices, comprising: a power high electron mobility transistor with a gate, a source and a drain, said source and said drain are coupled respectively to a first reference voltage and a second reference voltage; and an electrostatic discharge protection block, comprising: a first sub-block, comprising: a first two-dimensional electron gas resistor with one terminal coupled to said first reference voltage; a first trigger with one terminal coupled to another terminal of said first two-dimensional electron gas resistor and with another terminal coupled to said gate, wherein said first trigger comprises at least one lateral field effect rectifier in serial connec-tion, and each said lateral field effect rectifier comprises: a gallium nitride substrate; an aluminum gallium nitride layer on said gallium nitride substrate; a p-type gallium nitride layer on said aluminum gallium nitride layer and coupled with a first anode; and a first cathode and a second anode on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer, wherein said first anode is coupled to said second anode; and a first low-voltage high electron mobility transistor with a first gate, a first source and a first drain, said first gate is coupled to said another terminal of said first two-dimensional electron gas resistor and said terminal of said first trigger, and said first drain is coupled to said gate; and a second sub-block, comprising: a second two-dimensional electron gas resistor with one terminal coupled to said gate; a second trigger with one terminal coupled to another terminal of said second two-dimensional electron gas resistor and with another terminal coupled to said first reference voltage; and a second low-voltage high electron mobility transis-tor with a second gate, a second source and a second drain, said second gate is coupled to said terminal of said second trigger and said another terminal of said second two-dimensional electron gas resistor, and said second drain is coupled to said first source of said first low-voltage high electron mobility transistor, and said second source is coupled to said first reference voltage.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger is a gallium nitride capacitor, comprising: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with an third anode; and a second cathode on said gallium nitride substrate and said aluminum gallium nitride layer at one side of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger is a metal-insulator-metal capacitor, comprising: said gallium nitride substrate; an ion implant isolation layer on said gallium nitride substrate; a passivation layer on said ion implant isolation layer; an anode metal layer in said passivation layer; and a cathode metal layer on said passivation layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger comprises at least one lateral field effect rectifier in serial connection, and each said lateral field effect rectifier comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with a third anode; and 10 a second cathode and a fourth anode on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer, wherein said third anode is coupled to said fourth anode.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, further comprising a main two-dimensional electron gas resistor with one terminal coupled to said gate and with another terminal coupled to said terminal of said second two-dimensional electron gas resistor, said another terminal of said first trigger and said first drain.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first two-dimensional electron gas resistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; and a high-voltage terminal and a low-voltage terminal on said gallium nitride substrate and said aluminum gal-lium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second two-dimensional electron gas resistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; and a high-voltage terminal and a low-voltage terminal on said gallium nitride substrate and said aluminum gal-lium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first low-voltage high electron mobility transistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with said first gate; and said first source and said first drain on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second low-voltage high electron mobility transistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with said second gate; and said second source and said second drain on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first two-dimensional electron gas resistor, said first trigger, said first low-voltage high electron mobility transistor, said second two-dimensional electron gas resistor, said second trigger and said second low-voltage high electron mobility transis-tor share the same said gallium nitride substrate and the same said aluminum gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first trigger, said second trigger, said first low-voltage high electron mobility transistor and said second low-voltage high elec-tron mobility transistor share the same said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first trigger has a threshold voltage, and when a voltage of said another terminal of said first trigger is greater than a voltage of said terminal of said first trigger and a voltage difference ther-ebetween exceeds said threshold voltage of said first trigger, said first trigger conducts; and said second low-voltage high electron mobility transistor has a threshold voltage, and when a voltage of said second gate of said second low-voltage high electron mobility transistor is greater than a voltage of said second source and a voltage of said second drain and when a voltage difference therebetween exceeds said threshold voltage of said second low-voltage high electron mobility transistor, said second low-voltage high electron mobility transistor conducts, and said threshold voltage of said first trigger is greater than said threshold voltage of said second low-voltage high electron mobility transistor.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger has a threshold voltage, and when a voltage of said another terminal of said second trigger is greater than a voltage of said terminal of said second trigger and a voltage difference therebetween exceeds said threshold voltage of said second trigger, said second trigger conducts; and said first low-voltage high electron mobility transistor has a threshold voltage, and when a voltage of said first gate of said first low-voltage high electron mobility transistor is greater than a voltage of said first source and a voltage of said first drain and when a voltage difference therebetween exceeds said threshold voltage of said first low-voltage high electron mobility transistor, said first low-voltage high elec-tron mobility transistor conducts, and said threshold voltage of said second trigger is greater than said threshold voltage of said first low-voltage high electron mobility transistor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
power high electron mobility transistor (E-HEMT)
first two-dimensional electron gas resistor
first low-voltage high electron mobility transistor (first LV-HEMT)
Materials described outside the worked examples.
gallium nitride substrate
GaN
aluminum gallium nitride layer
AlGaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 12,609,527 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of an ESD protection circuit using GaN-based devices in accordance with one embodiment of the present invention;
FIG. 2 is a schematic diagram of an ESD protection circuit using GaN-based devices in accordance with another embodiment of the present invention;
FIG. 3 is a schematic cross-section of a GaN-based capacitor in accordance with one embodiment of the present invention;
FIG. 4 is a schematic cross-section of a MIM capacitor in accordance with one embodiment of the present invention;
FIG. 5 is a schematic cross-section of a GaN-based resistor in accordance with one embodiment of the present invention;
FIG. 6 is a schematic cross-section of a GaN-based lateral field effect rectifier (LFER) in accordance with one embodi- ment of the present invention; and
FIG. 7 is a schematic cross-section of a LV-HEMT in accordance with one embodiment of the present invention. Relative dimensions and proportions of parts of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrostatic discharge protection circuit using gal-lium nitride devices, comprising: a power high electron mobility transistor with a gate, a source and a drain, said source and said drain are coupled respectively to a first reference voltage and a second reference voltage; and an electrostatic discharge protection block, comprising: a first sub-block, comprising: a first two-dimensional electron gas resistor with one terminal coupled to said first reference voltage; a first trigger with one terminal coupled to another terminal of said first two-dimensional electron gas resistor and with another terminal coupled to said gate, wherein said first trigger comprises at least one lateral field effect rectifier in serial connec-tion, and each said lateral field effect rectifier comprises: a gallium nitride substrate; an aluminum gallium nitride layer on said gallium nitride substrate; a p-type gallium nitride layer on said aluminum gallium nitride layer and coupled with a first anode; and a first cathode and a second anode on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer, wherein said first anode is coupled to said second anode; and a first low-voltage high electron mobility transistor with a first gate, a first source and a first drain, said first gate is coupled to said another terminal of said first two-dimensional electron gas resistor and said terminal of said first trigger, and said first drain is coupled to said gate; and a second sub-block, comprising: a second two-dimensional electron gas resistor with one terminal coupled to said gate; a second trigger with one terminal coupled to another terminal of said second two-dimensional electron gas resistor and with another terminal coupled to said first reference voltage; and a second low-voltage high electron mobility transis-tor with a second gate, a second source and a second drain, said second gate is coupled to said terminal of said second trigger and said another terminal of said second two-dimensional electron gas resistor, and said second drain is coupled to said first source of said first low-voltage high electron mobility transistor, and said second source is coupled to said first reference voltage.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger is a gallium nitride capacitor, comprising: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with an third anode; and a second cathode on said gallium nitride substrate and said aluminum gallium nitride layer at one side of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger is a metal-insulator-metal capacitor, comprising: said gallium nitride substrate; an ion implant isolation layer on said gallium nitride substrate; a passivation layer on said ion implant isolation layer; an anode metal layer in said passivation layer; and a cathode metal layer on said passivation layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger comprises at least one lateral field effect rectifier in serial connection, and each said lateral field effect rectifier comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with a third anode; and 10 a second cathode and a fourth anode on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer, wherein said third anode is coupled to said fourth anode.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, further comprising a main two-dimensional electron gas resistor with one terminal coupled to said gate and with another terminal coupled to said terminal of said second two-dimensional electron gas resistor, said another terminal of said first trigger and said first drain.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first two-dimensional electron gas resistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; and a high-voltage terminal and a low-voltage terminal on said gallium nitride substrate and said aluminum gal-lium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second two-dimensional electron gas resistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; and a high-voltage terminal and a low-voltage terminal on said gallium nitride substrate and said aluminum gal-lium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first low-voltage high electron mobility transistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with said first gate; and said first source and said first drain on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second low-voltage high electron mobility transistor comprises: said gallium nitride substrate; said aluminum gallium nitride layer on said gallium nitride substrate; said p-type gallium nitride layer on said aluminum gal-lium nitride layer and coupled with said second gate; and said second source and said second drain on said gallium nitride substrate and said aluminum gallium nitride layer respectively at two sides of said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first two-dimensional electron gas resistor, said first trigger, said first low-voltage high electron mobility transistor, said second two-dimensional electron gas resistor, said second trigger and said second low-voltage high electron mobility transis-tor share the same said gallium nitride substrate and the same said aluminum gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first trigger, said second trigger, said first low-voltage high electron mobility transistor and said second low-voltage high elec-tron mobility transistor share the same said p-type gallium nitride layer.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said first trigger has a threshold voltage, and when a voltage of said another terminal of said first trigger is greater than a voltage of said terminal of said first trigger and a voltage difference ther-ebetween exceeds said threshold voltage of said first trigger, said first trigger conducts; and said second low-voltage high electron mobility transistor has a threshold voltage, and when a voltage of said second gate of said second low-voltage high electron mobility transistor is greater than a voltage of said second source and a voltage of said second drain and when a voltage difference therebetween exceeds said threshold voltage of said second low-voltage high electron mobility transistor, said second low-voltage high electron mobility transistor conducts, and said threshold voltage of said first trigger is greater than said threshold voltage of said second low-voltage high electron mobility transistor.
The electrostatic discharge protection circuit using gallium nitride devices of claim 1, wherein said second trigger has a threshold voltage, and when a voltage of said another terminal of said second trigger is greater than a voltage of said terminal of said second trigger and a voltage difference therebetween exceeds said threshold voltage of said second trigger, said second trigger conducts; and said first low-voltage high electron mobility transistor has a threshold voltage, and when a voltage of said first gate of said first low-voltage high electron mobility transistor is greater than a voltage of said first source and a voltage of said first drain and when a voltage difference therebetween exceeds said threshold voltage of said first low-voltage high electron mobility transistor, said first low-voltage high elec-tron mobility transistor conducts, and said threshold voltage of said second trigger is greater than said threshold voltage of said first low-voltage high electron mobility transistor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
power high electron mobility transistor (E-HEMT)
first two-dimensional electron gas resistor
first low-voltage high electron mobility transistor (first LV-HEMT)
Materials described outside the worked examples.
gallium nitride substrate
GaN
aluminum gallium nitride layer
AlGaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 7
Related documents with shared materials, methods, properties, or citations.
first trigger (lateral field effect rectifier)
second low-voltage high electron mobility transistor (second LV-HEMT)
gallium nitride capacitor (second trigger variant)
metal-insulator-metal capacitor (second trigger variant)
second trigger (lateral field effect rectifier variant)
main two-dimensional electron gas resistor
first two-dimensional electron gas resistor (detailed structure)
second two-dimensional electron gas resistor (detailed structure)
p-type gallium nitride layer
p-GaN
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second low-voltage high electron mobility transistor (second LV-HEMT)
gallium nitride capacitor (second trigger variant)
metal-insulator-metal capacitor (second trigger variant)
second trigger (lateral field effect rectifier variant)
main two-dimensional electron gas resistor
first two-dimensional electron gas resistor (detailed structure)
second two-dimensional electron gas resistor (detailed structure)
p-type gallium nitride layer
p-GaN
first trigger (lateral field effect rectifier)
second low-voltage high electron mobility transistor (second LV-HEMT)
gallium nitride capacitor (second trigger variant)
metal-insulator-metal capacitor (second trigger variant)
second trigger (lateral field effect rectifier variant)
main two-dimensional electron gas resistor
first two-dimensional electron gas resistor (detailed structure)
second two-dimensional electron gas resistor (detailed structure)
p-type gallium nitride layer
p-GaN
first trigger (lateral field effect rectifier)
second low-voltage high electron mobility transistor (second LV-HEMT)
gallium nitride capacitor (second trigger variant)
metal-insulator-metal capacitor (second trigger variant)
second trigger (lateral field effect rectifier variant)
main two-dimensional electron gas resistor
first two-dimensional electron gas resistor (detailed structure)
second two-dimensional electron gas resistor (detailed structure)
p-type gallium nitride layer
p-GaN
