GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PROTECTED LATERAL CHANNEL

Ozgur Aktas

Patent

Atlas literature

Patent

US 9,123,799

GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PROTECTED LATERAL CHANNEL

Ozgur Aktas, Isik C. Kizilyalli

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

4 independent · 19 dependent

1
IndependentGaNGaNGaNlateral-channel/lateral-drift GaN FET
A method for fabricating a lateral-channel/lateral-drift GaN ﬁeld-eﬀect transistor (FET), the method comprising: providing a substrate; providing a ﬁrst GaN layer coupled to the substrate, wherein the ﬁrst GaN layer has a ﬁrst conductivity type; forming a second GaN layer coupled to the ﬁrst GaN layer, wherein the second GaN layer has a second conductivity type; removing a portion of the second GaN layer to expose a portion of the ﬁrst GaN layer; forming a third GaN layer coupled to the second GaN layer and the exposed portion of the ﬁrst GaN layer, wherein the third GaN layer has a third conductivity type; removing a portion of the third GaN layer to expose a portion of the second GaN layer; forming a source structure coupled to the third GaN layer, wherein a ﬁrst portion of the third GaN layer is disposed between the source structure and the second GaN layer; forming a drain structure coupled to the third GaN layer; and forming a gate structure coupled to the third GaN layer, wherein a second portion of the third GaN layer is disposed between the gate structure and the second GaN layer.
1. 2
  Dependent← claim 1
  The method of claim 1 further comprising forming a contact coupled to the exposed portion of the second GaN layer.
2. 3
  Dependent← claim 1
  The method of claim 1 further comprising removing portions of the second GaN layer to form a plurality of sections that are progressively thinner as a distance from the second GaN layer to the gate structure increases.
3. 4
  Dependent← claim 1
  The method of claim 1 wherein forming the gate structure comprises forming the gate structure with metal.
4. 5
  Dependent← claim 1GaN
  The method of claim 1 wherein forming the gate structure comprises forming the gate structure incorporating GaN of the second conductivity type.
5. 6
  Dependent← claim 1
  The method of claim 1 further comprising removing a second portion of the second GaN layer, wherein the ﬁrst portion of the third GaN layer is thinner than the second portion of the third GaN layer.
6. 7
  Dependent← claim 1GaN
  The method of claim 1 wherein the third GaN layer comprises n-type GaN.
7. 8
  Dependent← claim 1GaN
  The method of claim 1 wherein the second GaN layer comprises p-type GaN.
8. 9
  Dependent← claim 1
  The method of claim 1 wherein at least one of the source structure, the drain structure, or the gate structure comprises a metal.
9. 10
  Dependent← claim 1
  The method of claim 1 wherein at least one of the source structure, the drain structure, or the gate structure comprises a metal and a semiconductor material.
11
IndependentGaNGaNGaNlateral-channel/vertical-drift GaN FET
A method for fabricating a lateral-channel/vertical-drift GaN ﬁeld-eﬀect transistor (FET), the method comprising: providing a substrate; providing a ﬁrst GaN layer coupled to the substrate, therein the ﬁrst GaN layer has a ﬁrst conductivity type; forming a second GaN layer coupled to the ﬁrst GaN layer, wherein the second GaN layer has a second conductivity type; removing a portion of the second GaN layer to expose a portion of the ﬁrst GaN layer; forming a third GaN layer coupled to the second GaN layer and the exposed portion of the ﬁrst GaN layer, wherein the third GaN layer has a third conductivity type; removing a portion of the third GaN layer to expose a portion of the second GaN layer; forming a source structure coupled to the third GaN layer, wherein a ﬁrst portion of the third GaN layer is disposed between the source structure and the second GaN layer; forming a drain structure coupled to the substrate; and forming a gate structure coupled to the third GaN layer, wherein a second portion of the third GaN layer is disposed between the gate structure and the second GaN layer.
1. 12
  Dependent← claim 11
  The method of claim 11 further comprising removing portions of the second GaN layer to form a plurality of sections that are progressively thinner as a distance from the second GaN layer to the gate structure increases.
2. 13
  Dependent← claim 11
  The method of claim 11 the ﬁrst portion of the third GaN layer is thinner than the second portion of the third GaN layer.
14
IndependentGaNGaNGaNlateral-drift FET
1 14. A lateral-drift ﬁeld-eﬀect transistor (FET) comprising: 2 a substrate; 3 a ﬁrst GaN-based layer coupled to the substrate; 4 a second GaN-based layer coupled to the ﬁrst GaN-based layer; 5 a third GaN-based layer coupled to the second GaN-based layer and a portion of 6 the ﬁrst GaN-based layer; 7 a channel region disposed in the third GaN-based layer; 8 a source structure coupled to the third GaN-based layer; 9 a gate structure coupled to the third GaN-based layer; and 10 a drain structure coupled to the third GaN-based layer.
1. 15
  Dependent← claim 14
  1 15. The lateral-drift FET of claim 14 further comprising a contact structure 2 coupled to the second GaN-based layer.
2. 16
  Dependent← claim 14
  1 16. The lateral-drift FET of claim 14 wherein a portion of the second GaN- 2 based layer comprises a ﬁeld plate structure.
3. 17
  Dependent← claim 14
  1 17. The lateral-drift FET of claim 14 wherein the ﬁeld plate structure has a 2 plurality of sections that are progressively thinner as a distance from the source structure 3 increases.
4. 18
  Dependent← claim 14
  1 18. The FET of claim 14 wherein a ﬁrst portion of the channel region 2 disposed between the source structure and the second GaN-based layer is thinner than a second 3 portion of the channel region disposed between the gate structure and the second GaN-based 4 layer.
19
IndependentGaNGaNGaNvertical-drift FET
1 19. A vertical-drift ﬁeld-eﬀect transistor (FET) comprising: 2 a substrate; 21 3 a ﬁrst GaN-based layer coupled to the substrate; 4 a second GaN-based layer coupled to the ﬁrst GaN-based layer; 5 a third GaN-based layer coupled to the second GaN-based layer and a portion of 6 the ﬁrst GaN-based layer; 7 a channel region disposed in the third GaN-based layer; 8 a source structure coupled to the third GaN-based layer; 9 a gate structure coupled to the third GaN-based layer; and 10 a drain structure coupled to the substrate.
1. 20
  Dependent← claim 19
  1 20. The vertical-drift FET of claim 19 further comprising a contact structure 2 coupled to the second GaN-based layer.
2. 21
  Dependent← claim 19
  1 21. The vertical-drift FET of claim 19 wherein a portion of the second GaN- 2 based layer comprises a ﬁeld plate structure.
3. 22
  Dependent← claim 19
  1 22. The vertical-drift FET of claim 19 wherein the ﬁeld plate structure has a 2 plurality of sections that are progressively thinner as a distance from the source structure 3 increases.
4. 23
  Dependent← claim 19
  1 23. The vertical-drift FET of claim 19 wherein a ﬁrst portion of the channel 2 region disposed between the source structure and the second GaN-based layer is thinner than a 3 second portion of the channel region disposed between the gate structure and the second GaN- 4 based layer.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

lateral-channel/lateral-drift GaN FET

GaNthird GaN layer (channel, third conductivity type)

GaNsecond GaN layer (second conductivity type)

GaNfirst GaN layer (first conductivity type)

substratesubstrate

lateral-channel/vertical-drift GaN FET

GaNthird GaN layer (channel, third conductivity type)

Materials

Materials described outside the worked examples.

first GaN layer (first conductivity type)

GaN

First Epitaxial Layer, First Conductivity Type

Second Epitaxial Layer, Second Conductivity Type, Field Plate LayerThird Epitaxial Layer, Channel Layer, Third Conductivity Type

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GALLIUM NITRIDE FIELD EFFECT TRANSISTOR WITH BURIED FIELD PLATE PROTECTED LATERAL CHANNEL | Matter42 Literature