Patent
US 10,284,092Patent
Atlas literature
Patent
US 10,284,092Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A power converter, comprising: a first power terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (HEMT) module connected to the first power te rm inal and a first intermediate terminal; a first lower se ries-stacked H EMT module connected to the second power terminal and the first intermediate terminal; a first inductor connected to the first intermediate terminal and a third power terminal; and a fourth power terminal connected to the second power terminal-a fifth power terminal and a sixth power terminal: a sec ond uppe r series-stacked H EM T module connected to the fi ft h power terminal and a second intermediate terminal: a second lower series-stacked HEMT module connected to the sixth power terminal and the second intermediate termi nal; a second inductor connec ted to the second inte rm ediate terminal and a seventh power terminal: and an ei g hth power te r minal connected to the sixth power terminal, each of the first upper series-stacked HEM "T module and the first lower series-stacked HEMT module comprising a fir st plurality of HEMTs and a first series-switch-driver connected to each gate of the f irst plurality of HEMTs, and each of the second upper series-stacked II EMT module and the second lower series-stacked HEMT module comprising a se cond plurality of HEMTs and a second series-switch-driver connected to each gate o f the second plurality of H EMTs. Currently amended
The power converter according to claim 1, further comprising a first power source connected bet w een the third power te rm inal and the fo urth power terminal, and a second power source connected between the first power terminal and the second power terminal. Original
The power converter according to claim 1, further comprising a first power source connected between the first power terminal and the third power terminal, and a second power source connected between the third power te rm inal and the fourth power terminal. Original
The power converter according to claim 1, further comprising: a f irst power source connected between the first power terminal and the second power terminal; and a second power source connected between the fifth power terminal and the sixth power termin al, the third power terminal being connected to the seventh power terminal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, further comprising: a first power source connected between the first power te rm inal and the sixth power terminal; and a second power source connected between the third power te nn inal and the seventh power terminal, the second power terminal being connected to the sixth power terminal, the first power terminal being connected to the fi It h power terminal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, further comprising: a first power source connected between the third power terminal and the fourth power termina l: and a second power source between the first power terminal and the f ifth power terminal, the second power terminal being connected to the sixth power terminal, the third power terminal being connected to the seventh power te rm inal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, fu rther comprising: a f irst power source connected between the first power terminal and the seventh power terminal; and a second power source between the fourth power terminal and the eighth power terminal, the first power te rm inal being connected to the fifth power terminal, and the third power terminal being connected to the seventh power t erminal. Currently amended
The power converter according to claim 1, further comprising: a ninth power terminal and a tenth power terminal; a third upper series-stacked HEMT module connected to the ninth power terminal and a third intermediate terminal; a third lower series-stacked HEM T module connected to the tenth power terminal and the third intermediate terminal; a third inductor connected to the third intermediate terminal and a eleventh power terminal; and a twelfth power terminal connected to the tenth power terminal, each of the third upper series-stacked HEMT module and the third lower series-stacked HEMT module comprising a third plurality of HEMTs and a third series-switch-driver connected to each gate of the third plurality of HEM I's. Currently amended
Canceled
, A power con verter, comprising: a first pow er terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (I- EMT) module connected to the first power terminal and a first intermediate terminal; a first lowe r series-stacked HEM T module connected to the second power terminal and the first intermediate terminal; a first inductor connected to the first inte rm ediate terminal and a third power terminal; and a fourth p ower terminal connected to the second power terminal, each of the first uppe r series-stacked HEM T module and the first lower series-sta cked H EMT module com prising a first plurality of HEMTs and a f irs t series-switch-driver connected to each gate of th e first plurality of HEMTs, each of the fi rst upper series-stacked HEMT module and the first lower series-stacked H EMT module co m prising: a first HEM T; a second H E MT, a first drain of the first HE MT being connected to a second source of the second HEMT; a first gate input terminal coupled to a first gate of the fi rst HEMT; a second gate input te rm inal coupled to a second gate o f the second H EMT; a first driver connected between the first gate input terminal and a first gate intermediate terminal; a first FB connected between the first gate intermediate terminal and the first gate of the f irst HE MT; a second driver connected between the second gate input terminal and a second gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; and a second gate capacitor connected between the second gate intermediate terminal and a second drain of the second HEMT, and the second driver comprising a second FB connected between the second gate input terminal and a second gate inte rm ediate terminal. Currently amended
The power converter according to claim 12, each of the first and second driver comprising two diodes. Original
The power converter according to claim 12, further comprising: a first Zener diode connected between the first gate inte rm ediate terminal and a first source of the f irst HEMT; and a second Zener diode connected between the second gate inte rn ediate terminal and the second source of the second HEM T. Original
'T he power converter according to claim 12, each of the first HEMT and the second HEMT being a gallium nitride (GaN) H E MT. Original
A power converter, comprising: a first power te r m inal and a second power terminal; SVG 15979892.11-08-2018.JO₈YY₃K₈RXEAPX0.CLM.1.svg 0.16 6.01 Black and white fi rst power terminal and a first intermediate terminal; a first lower series-stacked HEMT module connected to the second power terminal and the fi rst inte nn ediate terminal: a first inductor co nnected to the first inter mediate te rminal and a third power terminal; and a fourth power terminal connected to the second power terminal, each o f the first upper series-stacked HEMT module and the first lower series-stacked HE M T module comprising a first plurality of HEMTs and a first series-switch-driver connected to each g ate of the first plurality of H E MT s. and each of the first upper series-stacked HEMT module and the first lower series-stacked HEMT module comprising: first to nth HEMTs being connected in series to each other; first to nth gate input terminals coupled to first to nth gates of first to nth gate HEM I s through first to nth gate intermediate terminal, respectively; first to nth drivers connected between the first to nth gate input te nm inals and the first to nth gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; a kth gate capacitor connected between a (k +1)th gate input terminal and a kth source, k being from 2 to (n- 1); a nth gate capacitor connected between a n t h gate intermediate terminal and a nth drain. Currently amended
The power converter according to claim 16, further comprising first to nth Zener diodes, each of the first to nth Zener diode being connected between each of the first to nth gate intermediate terminal and each source of the first to nth II EMTs. Original
The power converter according to claim 16, further comprising first to n th FBs, each of the first to (n- 1)th F ls being connected between each of the first to (n-1)th gate intermediate terminal and each gate of the first to (n- 1)th HEMTs, and the nth F B being connected between nth gate input terminal and the nth gate intermediate term inal. Original
Canceled
A power converter, comprising: a first power terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (HEMT) module connected to the first power terminal and a first intermediate terminal; a first lower series-stacked HEMT module connected to the second power ter m inal and the first intermediate terminal; a first inductor connected to the first intermediate terminal and a third power terminal; a fourth power terminal connected to the second power terminal; a fifth power terminal and a sixth power ter m inal; a second upper series-stacked IlEM T module connected to the fifth power te rm inal and a second intermediate terminal; a second lower series-stacked HEMT module connected to the sixth power terminal and the second intermediate terminal; a second inductor connected to the second intermediate terminal and a seventh power terminal; and an eighth power terminal connected to the sixth power terminal, each of the first upper series-stacked HEMT module and the first lower series-stacked H EMT module comprising a first plurality of HEMTs and a fi rst series-switch-driver connected to each gate of the first plurality of HEM Ts, each of the second upper series-stacked HEMT module and the second lower series-stacked SVG 15979892.11-08-2018.JO₈YY₃K₈RXEAPX0.CLM.2.svg 0.16 6.51 Black and white connected to each gate of the second plurality of HEMTs. each of the first upper series-stacked HEM T module, the first lower series-stacked I IEMT module, the second upper series-stacked HEMT module, and the second lower series-stacked H EMT module comprising: a first HEMT; a second H EMT, a first drain of the first HEMT being connected to a second source of the second HEMT; a first gate input terminal coupled to a first gate of the first H E MT; a second gate input terminal coupled to a second gate of the second H EMT; a first driver connected between the first gate input terminal and a first gate intermediate terminal; a first FB connected between the first gate intermediate terminal and the first gate of the first HEMT; a second driver connected between the second gate input terminal and a second gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; and a second gate capacitor connected between the second gate intermediate terminal and a second drain of the second HEMT, and the second driver comprising a second FB connected between the second gate input terminal and a second gate intermediate terminal. Original
Layer stacks claimed or described, ordered top of device to substrate.
power converter with dual series-stacked HEMT half-bridge (two-phase)
power converter with series-stacked HEMT half-bridge including series-switch-driver (two HEMT stack)
power converter with series-stacked HEMT half-bridge including n-HEMT stack
Materials described outside the worked examples.
high electron mobility transistor (HEMT)
gallium nitride (GaN) HEMT
GaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,284,092Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A power converter, comprising: a first power terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (HEMT) module connected to the first power te rm inal and a first intermediate terminal; a first lower se ries-stacked H EMT module connected to the second power terminal and the first intermediate terminal; a first inductor connected to the first intermediate terminal and a third power terminal; and a fourth power terminal connected to the second power terminal-a fifth power terminal and a sixth power terminal: a sec ond uppe r series-stacked H EM T module connected to the fi ft h power terminal and a second intermediate terminal: a second lower series-stacked HEMT module connected to the sixth power terminal and the second intermediate termi nal; a second inductor connec ted to the second inte rm ediate terminal and a seventh power terminal: and an ei g hth power te r minal connected to the sixth power terminal, each of the first upper series-stacked HEM "T module and the first lower series-stacked HEMT module comprising a fir st plurality of HEMTs and a first series-switch-driver connected to each gate of the f irst plurality of HEMTs, and each of the second upper series-stacked II EMT module and the second lower series-stacked HEMT module comprising a se cond plurality of HEMTs and a second series-switch-driver connected to each gate o f the second plurality of H EMTs. Currently amended
The power converter according to claim 1, further comprising a first power source connected bet w een the third power te rm inal and the fo urth power terminal, and a second power source connected between the first power terminal and the second power terminal. Original
The power converter according to claim 1, further comprising a first power source connected between the first power terminal and the third power terminal, and a second power source connected between the third power te rm inal and the fourth power terminal. Original
The power converter according to claim 1, further comprising: a f irst power source connected between the first power terminal and the second power terminal; and a second power source connected between the fifth power terminal and the sixth power termin al, the third power terminal being connected to the seventh power terminal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, further comprising: a first power source connected between the first power te rm inal and the sixth power terminal; and a second power source connected between the third power te nn inal and the seventh power terminal, the second power terminal being connected to the sixth power terminal, the first power terminal being connected to the fi It h power terminal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, further comprising: a first power source connected between the third power terminal and the fourth power termina l: and a second power source between the first power terminal and the f ifth power terminal, the second power terminal being connected to the sixth power terminal, the third power terminal being connected to the seventh power te rm inal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, fu rther comprising: a f irst power source connected between the first power terminal and the seventh power terminal; and a second power source between the fourth power terminal and the eighth power terminal, the first power te rm inal being connected to the fifth power terminal, and the third power terminal being connected to the seventh power t erminal. Currently amended
The power converter according to claim 1, further comprising: a ninth power terminal and a tenth power terminal; a third upper series-stacked HEMT module connected to the ninth power terminal and a third intermediate terminal; a third lower series-stacked HEM T module connected to the tenth power terminal and the third intermediate terminal; a third inductor connected to the third intermediate terminal and a eleventh power terminal; and a twelfth power terminal connected to the tenth power terminal, each of the third upper series-stacked HEMT module and the third lower series-stacked HEMT module comprising a third plurality of HEMTs and a third series-switch-driver connected to each gate of the third plurality of HEM I's. Currently amended
Canceled
, A power con verter, comprising: a first pow er terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (I- EMT) module connected to the first power terminal and a first intermediate terminal; a first lowe r series-stacked HEM T module connected to the second power terminal and the first intermediate terminal; a first inductor connected to the first inte rm ediate terminal and a third power terminal; and a fourth p ower terminal connected to the second power terminal, each of the first uppe r series-stacked HEM T module and the first lower series-sta cked H EMT module com prising a first plurality of HEMTs and a f irs t series-switch-driver connected to each gate of th e first plurality of HEMTs, each of the fi rst upper series-stacked HEMT module and the first lower series-stacked H EMT module co m prising: a first HEM T; a second H E MT, a first drain of the first HE MT being connected to a second source of the second HEMT; a first gate input terminal coupled to a first gate of the fi rst HEMT; a second gate input te rm inal coupled to a second gate o f the second H EMT; a first driver connected between the first gate input terminal and a first gate intermediate terminal; a first FB connected between the first gate intermediate terminal and the first gate of the f irst HE MT; a second driver connected between the second gate input terminal and a second gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; and a second gate capacitor connected between the second gate intermediate terminal and a second drain of the second HEMT, and the second driver comprising a second FB connected between the second gate input terminal and a second gate inte rm ediate terminal. Currently amended
The power converter according to claim 12, each of the first and second driver comprising two diodes. Original
The power converter according to claim 12, further comprising: a first Zener diode connected between the first gate inte rm ediate terminal and a first source of the f irst HEMT; and a second Zener diode connected between the second gate inte rn ediate terminal and the second source of the second HEM T. Original
'T he power converter according to claim 12, each of the first HEMT and the second HEMT being a gallium nitride (GaN) H E MT. Original
A power converter, comprising: a first power te r m inal and a second power terminal; SVG 15979892.11-08-2018.JO₈YY₃K₈RXEAPX0.CLM.1.svg 0.16 6.01 Black and white fi rst power terminal and a first intermediate terminal; a first lower series-stacked HEMT module connected to the second power terminal and the fi rst inte nn ediate terminal: a first inductor co nnected to the first inter mediate te rminal and a third power terminal; and a fourth power terminal connected to the second power terminal, each o f the first upper series-stacked HEMT module and the first lower series-stacked HE M T module comprising a first plurality of HEMTs and a first series-switch-driver connected to each g ate of the first plurality of H E MT s. and each of the first upper series-stacked HEMT module and the first lower series-stacked HEMT module comprising: first to nth HEMTs being connected in series to each other; first to nth gate input terminals coupled to first to nth gates of first to nth gate HEM I s through first to nth gate intermediate terminal, respectively; first to nth drivers connected between the first to nth gate input te nm inals and the first to nth gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; a kth gate capacitor connected between a (k +1)th gate input terminal and a kth source, k being from 2 to (n- 1); a nth gate capacitor connected between a n t h gate intermediate terminal and a nth drain. Currently amended
The power converter according to claim 16, further comprising first to nth Zener diodes, each of the first to nth Zener diode being connected between each of the first to nth gate intermediate terminal and each source of the first to nth II EMTs. Original
The power converter according to claim 16, further comprising first to n th FBs, each of the first to (n- 1)th F ls being connected between each of the first to (n-1)th gate intermediate terminal and each gate of the first to (n- 1)th HEMTs, and the nth F B being connected between nth gate input terminal and the nth gate intermediate term inal. Original
Canceled
A power converter, comprising: a first power terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (HEMT) module connected to the first power terminal and a first intermediate terminal; a first lower series-stacked HEMT module connected to the second power ter m inal and the first intermediate terminal; a first inductor connected to the first intermediate terminal and a third power terminal; a fourth power terminal connected to the second power terminal; a fifth power terminal and a sixth power ter m inal; a second upper series-stacked IlEM T module connected to the fifth power te rm inal and a second intermediate terminal; a second lower series-stacked HEMT module connected to the sixth power terminal and the second intermediate terminal; a second inductor connected to the second intermediate terminal and a seventh power terminal; and an eighth power terminal connected to the sixth power terminal, each of the first upper series-stacked HEMT module and the first lower series-stacked H EMT module comprising a first plurality of HEMTs and a fi rst series-switch-driver connected to each gate of the first plurality of HEM Ts, each of the second upper series-stacked HEMT module and the second lower series-stacked SVG 15979892.11-08-2018.JO₈YY₃K₈RXEAPX0.CLM.2.svg 0.16 6.51 Black and white connected to each gate of the second plurality of HEMTs. each of the first upper series-stacked HEM T module, the first lower series-stacked I IEMT module, the second upper series-stacked HEMT module, and the second lower series-stacked H EMT module comprising: a first HEMT; a second H EMT, a first drain of the first HEMT being connected to a second source of the second HEMT; a first gate input terminal coupled to a first gate of the first H E MT; a second gate input terminal coupled to a second gate of the second H EMT; a first driver connected between the first gate input terminal and a first gate intermediate terminal; a first FB connected between the first gate intermediate terminal and the first gate of the first HEMT; a second driver connected between the second gate input terminal and a second gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; and a second gate capacitor connected between the second gate intermediate terminal and a second drain of the second HEMT, and the second driver comprising a second FB connected between the second gate input terminal and a second gate intermediate terminal. Original
Layer stacks claimed or described, ordered top of device to substrate.
power converter with dual series-stacked HEMT half-bridge (two-phase)
power converter with series-stacked HEMT half-bridge including series-switch-driver (two HEMT stack)
power converter with series-stacked HEMT half-bridge including n-HEMT stack
Materials described outside the worked examples.
high electron mobility transistor (HEMT)
gallium nitride (GaN) HEMT
GaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,284,092Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A power converter, comprising: a first power terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (HEMT) module connected to the first power te rm inal and a first intermediate terminal; a first lower se ries-stacked H EMT module connected to the second power terminal and the first intermediate terminal; a first inductor connected to the first intermediate terminal and a third power terminal; and a fourth power terminal connected to the second power terminal-a fifth power terminal and a sixth power terminal: a sec ond uppe r series-stacked H EM T module connected to the fi ft h power terminal and a second intermediate terminal: a second lower series-stacked HEMT module connected to the sixth power terminal and the second intermediate termi nal; a second inductor connec ted to the second inte rm ediate terminal and a seventh power terminal: and an ei g hth power te r minal connected to the sixth power terminal, each of the first upper series-stacked HEM "T module and the first lower series-stacked HEMT module comprising a fir st plurality of HEMTs and a first series-switch-driver connected to each gate of the f irst plurality of HEMTs, and each of the second upper series-stacked II EMT module and the second lower series-stacked HEMT module comprising a se cond plurality of HEMTs and a second series-switch-driver connected to each gate o f the second plurality of H EMTs. Currently amended
The power converter according to claim 1, further comprising a first power source connected bet w een the third power te rm inal and the fo urth power terminal, and a second power source connected between the first power terminal and the second power terminal. Original
The power converter according to claim 1, further comprising a first power source connected between the first power terminal and the third power terminal, and a second power source connected between the third power te rm inal and the fourth power terminal. Original
The power converter according to claim 1, further comprising: a f irst power source connected between the first power terminal and the second power terminal; and a second power source connected between the fifth power terminal and the sixth power termin al, the third power terminal being connected to the seventh power terminal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, further comprising: a first power source connected between the first power te rm inal and the sixth power terminal; and a second power source connected between the third power te nn inal and the seventh power terminal, the second power terminal being connected to the sixth power terminal, the first power terminal being connected to the fi It h power terminal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, further comprising: a first power source connected between the third power terminal and the fourth power termina l: and a second power source between the first power terminal and the f ifth power terminal, the second power terminal being connected to the sixth power terminal, the third power terminal being connected to the seventh power te rm inal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, fu rther comprising: a f irst power source connected between the first power terminal and the seventh power terminal; and a second power source between the fourth power terminal and the eighth power terminal, the first power te rm inal being connected to the fifth power terminal, and the third power terminal being connected to the seventh power t erminal. Currently amended
The power converter according to claim 1, further comprising: a ninth power terminal and a tenth power terminal; a third upper series-stacked HEMT module connected to the ninth power terminal and a third intermediate terminal; a third lower series-stacked HEM T module connected to the tenth power terminal and the third intermediate terminal; a third inductor connected to the third intermediate terminal and a eleventh power terminal; and a twelfth power terminal connected to the tenth power terminal, each of the third upper series-stacked HEMT module and the third lower series-stacked HEMT module comprising a third plurality of HEMTs and a third series-switch-driver connected to each gate of the third plurality of HEM I's. Currently amended
Canceled
, A power con verter, comprising: a first pow er terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (I- EMT) module connected to the first power terminal and a first intermediate terminal; a first lowe r series-stacked HEM T module connected to the second power terminal and the first intermediate terminal; a first inductor connected to the first inte rm ediate terminal and a third power terminal; and a fourth p ower terminal connected to the second power terminal, each of the first uppe r series-stacked HEM T module and the first lower series-sta cked H EMT module com prising a first plurality of HEMTs and a f irs t series-switch-driver connected to each gate of th e first plurality of HEMTs, each of the fi rst upper series-stacked HEMT module and the first lower series-stacked H EMT module co m prising: a first HEM T; a second H E MT, a first drain of the first HE MT being connected to a second source of the second HEMT; a first gate input terminal coupled to a first gate of the fi rst HEMT; a second gate input te rm inal coupled to a second gate o f the second H EMT; a first driver connected between the first gate input terminal and a first gate intermediate terminal; a first FB connected between the first gate intermediate terminal and the first gate of the f irst HE MT; a second driver connected between the second gate input terminal and a second gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; and a second gate capacitor connected between the second gate intermediate terminal and a second drain of the second HEMT, and the second driver comprising a second FB connected between the second gate input terminal and a second gate inte rm ediate terminal. Currently amended
The power converter according to claim 12, each of the first and second driver comprising two diodes. Original
The power converter according to claim 12, further comprising: a first Zener diode connected between the first gate inte rm ediate terminal and a first source of the f irst HEMT; and a second Zener diode connected between the second gate inte rn ediate terminal and the second source of the second HEM T. Original
'T he power converter according to claim 12, each of the first HEMT and the second HEMT being a gallium nitride (GaN) H E MT. Original
A power converter, comprising: a first power te r m inal and a second power terminal; SVG 15979892.11-08-2018.JO₈YY₃K₈RXEAPX0.CLM.1.svg 0.16 6.01 Black and white fi rst power terminal and a first intermediate terminal; a first lower series-stacked HEMT module connected to the second power terminal and the fi rst inte nn ediate terminal: a first inductor co nnected to the first inter mediate te rminal and a third power terminal; and a fourth power terminal connected to the second power terminal, each o f the first upper series-stacked HEMT module and the first lower series-stacked HE M T module comprising a first plurality of HEMTs and a first series-switch-driver connected to each g ate of the first plurality of H E MT s. and each of the first upper series-stacked HEMT module and the first lower series-stacked HEMT module comprising: first to nth HEMTs being connected in series to each other; first to nth gate input terminals coupled to first to nth gates of first to nth gate HEM I s through first to nth gate intermediate terminal, respectively; first to nth drivers connected between the first to nth gate input te nm inals and the first to nth gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; a kth gate capacitor connected between a (k +1)th gate input terminal and a kth source, k being from 2 to (n- 1); a nth gate capacitor connected between a n t h gate intermediate terminal and a nth drain. Currently amended
The power converter according to claim 16, further comprising first to nth Zener diodes, each of the first to nth Zener diode being connected between each of the first to nth gate intermediate terminal and each source of the first to nth II EMTs. Original
The power converter according to claim 16, further comprising first to n th FBs, each of the first to (n- 1)th F ls being connected between each of the first to (n-1)th gate intermediate terminal and each gate of the first to (n- 1)th HEMTs, and the nth F B being connected between nth gate input terminal and the nth gate intermediate term inal. Original
Canceled
A power converter, comprising: a first power terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (HEMT) module connected to the first power terminal and a first intermediate terminal; a first lower series-stacked HEMT module connected to the second power ter m inal and the first intermediate terminal; a first inductor connected to the first intermediate terminal and a third power terminal; a fourth power terminal connected to the second power terminal; a fifth power terminal and a sixth power ter m inal; a second upper series-stacked IlEM T module connected to the fifth power te rm inal and a second intermediate terminal; a second lower series-stacked HEMT module connected to the sixth power terminal and the second intermediate terminal; a second inductor connected to the second intermediate terminal and a seventh power terminal; and an eighth power terminal connected to the sixth power terminal, each of the first upper series-stacked HEMT module and the first lower series-stacked H EMT module comprising a first plurality of HEMTs and a fi rst series-switch-driver connected to each gate of the first plurality of HEM Ts, each of the second upper series-stacked HEMT module and the second lower series-stacked SVG 15979892.11-08-2018.JO₈YY₃K₈RXEAPX0.CLM.2.svg 0.16 6.51 Black and white connected to each gate of the second plurality of HEMTs. each of the first upper series-stacked HEM T module, the first lower series-stacked I IEMT module, the second upper series-stacked HEMT module, and the second lower series-stacked H EMT module comprising: a first HEMT; a second H EMT, a first drain of the first HEMT being connected to a second source of the second HEMT; a first gate input terminal coupled to a first gate of the first H E MT; a second gate input terminal coupled to a second gate of the second H EMT; a first driver connected between the first gate input terminal and a first gate intermediate terminal; a first FB connected between the first gate intermediate terminal and the first gate of the first HEMT; a second driver connected between the second gate input terminal and a second gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; and a second gate capacitor connected between the second gate intermediate terminal and a second drain of the second HEMT, and the second driver comprising a second FB connected between the second gate input terminal and a second gate intermediate terminal. Original
Layer stacks claimed or described, ordered top of device to substrate.
power converter with dual series-stacked HEMT half-bridge (two-phase)
power converter with series-stacked HEMT half-bridge including series-switch-driver (two HEMT stack)
power converter with series-stacked HEMT half-bridge including n-HEMT stack
Materials described outside the worked examples.
high electron mobility transistor (HEMT)
gallium nitride (GaN) HEMT
GaN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,284,092Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A power converter, comprising: a first power terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (HEMT) module connected to the first power te rm inal and a first intermediate terminal; a first lower se ries-stacked H EMT module connected to the second power terminal and the first intermediate terminal; a first inductor connected to the first intermediate terminal and a third power terminal; and a fourth power terminal connected to the second power terminal-a fifth power terminal and a sixth power terminal: a sec ond uppe r series-stacked H EM T module connected to the fi ft h power terminal and a second intermediate terminal: a second lower series-stacked HEMT module connected to the sixth power terminal and the second intermediate termi nal; a second inductor connec ted to the second inte rm ediate terminal and a seventh power terminal: and an ei g hth power te r minal connected to the sixth power terminal, each of the first upper series-stacked HEM "T module and the first lower series-stacked HEMT module comprising a fir st plurality of HEMTs and a first series-switch-driver connected to each gate of the f irst plurality of HEMTs, and each of the second upper series-stacked II EMT module and the second lower series-stacked HEMT module comprising a se cond plurality of HEMTs and a second series-switch-driver connected to each gate o f the second plurality of H EMTs. Currently amended
The power converter according to claim 1, further comprising a first power source connected bet w een the third power te rm inal and the fo urth power terminal, and a second power source connected between the first power terminal and the second power terminal. Original
The power converter according to claim 1, further comprising a first power source connected between the first power terminal and the third power terminal, and a second power source connected between the third power te rm inal and the fourth power terminal. Original
The power converter according to claim 1, further comprising: a f irst power source connected between the first power terminal and the second power terminal; and a second power source connected between the fifth power terminal and the sixth power termin al, the third power terminal being connected to the seventh power terminal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, further comprising: a first power source connected between the first power te rm inal and the sixth power terminal; and a second power source connected between the third power te nn inal and the seventh power terminal, the second power terminal being connected to the sixth power terminal, the first power terminal being connected to the fi It h power terminal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, further comprising: a first power source connected between the third power terminal and the fourth power termina l: and a second power source between the first power terminal and the f ifth power terminal, the second power terminal being connected to the sixth power terminal, the third power terminal being connected to the seventh power te rm inal, and the fourth power terminal being connected to the eighth power terminal. Currently amended
The power converter according to claim 1, fu rther comprising: a f irst power source connected between the first power terminal and the seventh power terminal; and a second power source between the fourth power terminal and the eighth power terminal, the first power te rm inal being connected to the fifth power terminal, and the third power terminal being connected to the seventh power t erminal. Currently amended
The power converter according to claim 1, further comprising: a ninth power terminal and a tenth power terminal; a third upper series-stacked HEMT module connected to the ninth power terminal and a third intermediate terminal; a third lower series-stacked HEM T module connected to the tenth power terminal and the third intermediate terminal; a third inductor connected to the third intermediate terminal and a eleventh power terminal; and a twelfth power terminal connected to the tenth power terminal, each of the third upper series-stacked HEMT module and the third lower series-stacked HEMT module comprising a third plurality of HEMTs and a third series-switch-driver connected to each gate of the third plurality of HEM I's. Currently amended
Canceled
, A power con verter, comprising: a first pow er terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (I- EMT) module connected to the first power terminal and a first intermediate terminal; a first lowe r series-stacked HEM T module connected to the second power terminal and the first intermediate terminal; a first inductor connected to the first inte rm ediate terminal and a third power terminal; and a fourth p ower terminal connected to the second power terminal, each of the first uppe r series-stacked HEM T module and the first lower series-sta cked H EMT module com prising a first plurality of HEMTs and a f irs t series-switch-driver connected to each gate of th e first plurality of HEMTs, each of the fi rst upper series-stacked HEMT module and the first lower series-stacked H EMT module co m prising: a first HEM T; a second H E MT, a first drain of the first HE MT being connected to a second source of the second HEMT; a first gate input terminal coupled to a first gate of the fi rst HEMT; a second gate input te rm inal coupled to a second gate o f the second H EMT; a first driver connected between the first gate input terminal and a first gate intermediate terminal; a first FB connected between the first gate intermediate terminal and the first gate of the f irst HE MT; a second driver connected between the second gate input terminal and a second gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; and a second gate capacitor connected between the second gate intermediate terminal and a second drain of the second HEMT, and the second driver comprising a second FB connected between the second gate input terminal and a second gate inte rm ediate terminal. Currently amended
The power converter according to claim 12, each of the first and second driver comprising two diodes. Original
The power converter according to claim 12, further comprising: a first Zener diode connected between the first gate inte rm ediate terminal and a first source of the f irst HEMT; and a second Zener diode connected between the second gate inte rn ediate terminal and the second source of the second HEM T. Original
'T he power converter according to claim 12, each of the first HEMT and the second HEMT being a gallium nitride (GaN) H E MT. Original
A power converter, comprising: a first power te r m inal and a second power terminal; SVG 15979892.11-08-2018.JO₈YY₃K₈RXEAPX0.CLM.1.svg 0.16 6.01 Black and white fi rst power terminal and a first intermediate terminal; a first lower series-stacked HEMT module connected to the second power terminal and the fi rst inte nn ediate terminal: a first inductor co nnected to the first inter mediate te rminal and a third power terminal; and a fourth power terminal connected to the second power terminal, each o f the first upper series-stacked HEMT module and the first lower series-stacked HE M T module comprising a first plurality of HEMTs and a first series-switch-driver connected to each g ate of the first plurality of H E MT s. and each of the first upper series-stacked HEMT module and the first lower series-stacked HEMT module comprising: first to nth HEMTs being connected in series to each other; first to nth gate input terminals coupled to first to nth gates of first to nth gate HEM I s through first to nth gate intermediate terminal, respectively; first to nth drivers connected between the first to nth gate input te nm inals and the first to nth gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; a kth gate capacitor connected between a (k +1)th gate input terminal and a kth source, k being from 2 to (n- 1); a nth gate capacitor connected between a n t h gate intermediate terminal and a nth drain. Currently amended
The power converter according to claim 16, further comprising first to nth Zener diodes, each of the first to nth Zener diode being connected between each of the first to nth gate intermediate terminal and each source of the first to nth II EMTs. Original
The power converter according to claim 16, further comprising first to n th FBs, each of the first to (n- 1)th F ls being connected between each of the first to (n-1)th gate intermediate terminal and each gate of the first to (n- 1)th HEMTs, and the nth F B being connected between nth gate input terminal and the nth gate intermediate term inal. Original
Canceled
A power converter, comprising: a first power terminal and a second power terminal; a first upper series-stacked high electron mobility transistor (HEMT) module connected to the first power terminal and a first intermediate terminal; a first lower series-stacked HEMT module connected to the second power ter m inal and the first intermediate terminal; a first inductor connected to the first intermediate terminal and a third power terminal; a fourth power terminal connected to the second power terminal; a fifth power terminal and a sixth power ter m inal; a second upper series-stacked IlEM T module connected to the fifth power te rm inal and a second intermediate terminal; a second lower series-stacked HEMT module connected to the sixth power terminal and the second intermediate terminal; a second inductor connected to the second intermediate terminal and a seventh power terminal; and an eighth power terminal connected to the sixth power terminal, each of the first upper series-stacked HEMT module and the first lower series-stacked H EMT module comprising a first plurality of HEMTs and a fi rst series-switch-driver connected to each gate of the first plurality of HEM Ts, each of the second upper series-stacked HEMT module and the second lower series-stacked SVG 15979892.11-08-2018.JO₈YY₃K₈RXEAPX0.CLM.2.svg 0.16 6.51 Black and white connected to each gate of the second plurality of HEMTs. each of the first upper series-stacked HEM T module, the first lower series-stacked I IEMT module, the second upper series-stacked HEMT module, and the second lower series-stacked H EMT module comprising: a first HEMT; a second H EMT, a first drain of the first HEMT being connected to a second source of the second HEMT; a first gate input terminal coupled to a first gate of the first H E MT; a second gate input terminal coupled to a second gate of the second H EMT; a first driver connected between the first gate input terminal and a first gate intermediate terminal; a first FB connected between the first gate intermediate terminal and the first gate of the first HEMT; a second driver connected between the second gate input terminal and a second gate intermediate terminal; a first gate capacitor connected between the first gate input terminal and the second gate input terminal; and a second gate capacitor connected between the second gate intermediate terminal and a second drain of the second HEMT, and the second driver comprising a second FB connected between the second gate input terminal and a second gate intermediate terminal. Original
Layer stacks claimed or described, ordered top of device to substrate.
power converter with dual series-stacked HEMT half-bridge (two-phase)
power converter with series-stacked HEMT half-bridge including series-switch-driver (two HEMT stack)
power converter with series-stacked HEMT half-bridge including n-HEMT stack
Materials described outside the worked examples.
high electron mobility transistor (HEMT)
gallium nitride (GaN) HEMT
GaN
Related documents with shared materials, methods, properties, or citations.
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