Title: GALLIUM NITRIDE TRANSISTORS WITH SOURCE AND DRAIN FIELD PLATES AND THEIR METHODS OF dSG 172 \ 170 110 172 182 140 dSFP 142 d DG 9 140 D dDFP dG 116 00 00 0 0\ 0 [Continued on next page]

Patent

Atlas literature

Patent

US 11,575,036

Title: GALLIUM NITRIDE TRANSISTORS WITH SOURCE AND DRAIN FIELD PLATES AND THEIR METHODS OF dSG 172 \ 170 110 172 182 140 dSFP 142 d DG 9 140 D dDFP dG 116 00 00 0 0\ 0 [Continued on next page]

Han Wui Then, Stephan Leuschner, Marko Radosavljevic, Sansaptak Dasgupta

Intel Corporation·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 11 dependent

1
IndependentGaNGaN transistor with source and drain field plates
A transistor comprising: a gallium nitride (GaN) layer above a substrate; a gate structure over the GaN layer, the gate structure including a gate electrode; a source region on a ﬁrst side of the gate structure; a drain region on a second side of the gate structure, the second side opposite the ﬁrst side; a source ﬁeld plate above the source region, wherein the source ﬁeld plate is not vertically overlapping with the gate electrode; [[and]] a drain ﬁeld plate above the drain region, wherein the drain ﬁeld plate is not vertically overlapping with the gate electrode, a source metal contact coupled to the source region, the source metal contact laterally spaced apart from the source ﬁeld plate; and a drain metal contact coupled to the drain region, the drain metal contact laterally spaced apart from the drain ﬁeld plate. Currently amended
1. 2
  Dependent← claim 1GaNGaN transistor with source and drain field plates
  The transistor of claim 1 wherein the source ﬁeld plate is separated by a ﬁrst distance from the source region, and wherein the drain ﬁeld plate is separated from the drain region by a second distance, wherein the ﬁrst and second distances are the same. Original
2. 3
  Dependent← claim 1GaNGaN transistor with source and drain field plates
  The transistor of claim 1 wherein the source ﬁeld plate is separated by a ﬁrst distance from the source region and wherein the drain ﬁeld plate is separated from the drain region by a second distance wherein the ﬁrst distance and the second distance are diﬀerent. Original
3. 6
  Dependent← claim 1GaNGaN transistor with source and drain field plates
  The transistor of claim 1 wherein a voltage applied to the source ﬁeld plate and applied to drain ﬁeld plate are diﬀerent from a gate voltage applied to the gate structure and VSS. Original
4. 7
  Dependent← claim 1GaNGaN transistor with source and drain field plates
  The transistor of claim 1 wherein the source ﬁeld plate has a top surface and the drain ﬁeld plate has a top surface, wherein the top surface of the source ﬁeld plate and the top surface of the drain ﬁeld plate are substantially coplanar with a top surface of the gate structure. Original
5. 9
  Dependent← claim 1GaNGaN transistor with source and drain field plates
  The transistor of claim 1 wherein the source ﬁeld plate is separated from the gate structure by a ﬁrst distance and wherein the drain ﬁeld plate is separated from the gate structure by a second distance wherein the ﬁrst distance and second distance are the same. Original
6. 10
  Dependent← claim 1GaNGaN transistor with source and drain field plates
  The transistor of claim 1 further comprising a ﬁrst spacer on a source side of the gate structure and a second spacer on a drain side of the gate structure. Original
7. 11
  Dependent← claim 1GaNGaN transistor with source and drain field plates
  The transistor of claim 1 further comprising a second gate structure, the second gate structure over the G aN layer and between the gate structure and the drain ﬁeld plate. Original
8
Independent
Canceled
12
Independent
- 19. Canceled
19
Independent
Canceled
20
IndependentGaNcircuit with two GaN transistors with source and drain field plates and capacitors
A circuit, comprising: a ﬁrst transistor, comprising: a gallium nitride (G aN) layer above a substrate; a ﬁrst gate structure over the G aN layer; a ﬁrst source region on a ﬁrst side of the ﬁrst gate structure; a ﬁrst drain region on a second side of the ﬁrst gate structure, the second side opposite the ﬁrst side; a ﬁrst source ﬁeld plate above the ﬁrst source region; and a ﬁrst drain ﬁeld plate above the ﬁrst drain region; a second transistor, comprising: a second gate structure over the G aN layer; a second source region on a ﬁrst side of the second gate structure; a second drain region on a second side of the second gate structure, the second side opposite the ﬁrst side; a second source ﬁeld plate above the second source region; and a second drain ﬁeld plate above the second drain region; a ﬁrst capacitor coupled between the ﬁrst drain ﬁeld plate of the ﬁrst transistor and the second drain of the second transistor; a second capacitor coupled between the second drain ﬁeld plate of the second transistor and the ﬁrst drain of the ﬁrst transistor; a third capacitor coupled between the ﬁrst source ﬁeld plate of the ﬁrst transistor and the second source of the second transistor; and a fourth capacitor coupled between the second source ﬁeld plate of the second transistor and the ﬁrst source of the ﬁrst transistor. Original
1. 21
  Dependent← claim 20GaNcircuit with two GaN transistors with source and drain field plates and capacitors
  The circuit of claim 20 wherein the ﬁrst source ﬁeld plate is separated by a ﬁrst distance from the ﬁrst source region, wherein the ﬁrst drain ﬁeld plate is separated from the ﬁrst drain region by a second distance, wherein the second source ﬁeld plate is separated by a third distance from the second source region, wherein the second drain ﬁeld plate is separated from the second drain region by a fourth distance, and wherein the ﬁrst, second, third and fourth distances are the same. Original
2. 22
  Dependent← claim 20GaNcircuit with two GaN transistors with source and drain field plates and capacitors
  The circuit of claim 20 wherein the ﬁrst source ﬁeld plate is separated from the ﬁrst gate structure by a ﬁrst distance, wherein the ﬁrst drain ﬁeld plate is separated from the ﬁrst gate structure by a second distance, wherein the second source ﬁeld plate is separated from the second gate structure by a third distance, wherein the second drain ﬁeld plate is separated from the second gate structure by a fourth distance, and wherein the ﬁrst distance, the second distance, the third distance and the fourth distance are the same. Original
23
IndependentGaNGaN transistor with source and drain field plates and second gate structure
A transistor comprising: a gallium nitride (G aN) layer above a substrate; a gate structure over the G aN layer; a source region on a ﬁrst side of the gate structure; a drain region on a second side of the gate structure, the second side opposite the ﬁrst side; a source ﬁeld plate above the source region; a drain ﬁeld plate above the drain region; and a second gate structure, the second gate structure over the G aN layer and between the gate structure and the drain ﬁeld plate. Previously presented

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN transistor with source and drain field plates

drain_field_platedrain field plate

source_field_platesource field plate

gate_structuregate structure

GaNchannel

substratesubstrate

circuit with two GaN transistors with source and drain field plates and capacitors

Materials

Materials described outside the worked examples.

gallium nitride

GaN

Claimed Channel Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Title: GALLIUM NITRIDE TRANSISTORS WITH SOURCE AND DRAIN FIELD PLATES AND THEIR METHODS OF dSG 172 \ 170 110 172 182 140 dSFP 142 d DG 9 140 D dDFP dG 116 00 00 0 0\ 0 [Continued on next page] | Matter42 Literature