BI-DIRECTIONAL HEMT/GaN HALF-BRIDGE CIRCUIT

Thomas Ribarich

Patent details

Patent

US 8,243,476

BI-DIRECTIONAL HEMT/GaN HALF-BRIDGE CIRCUIT

Thomas Ribarich

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

11 independent · 9 dependent

1
Independent
Claims 1-10 canceled
1. 13
  Dependent← claim 1GaNbi-directional HEMT half-bridge circuit
  The half-bridge circuit of claim 1 1, wherein said ﬁrst and second HEMTs comprise gallium nitride (GaN).
2
Independent
canceled
3
Independent
canceled
4
Independent
canceled
5
Independent
canceled
6
Independent
canceled
7
Independent
canceled
8
Independent
canceled
9
Independent
canceled
10
Independent
canceled
11
Independenthigh electron mobility transistor (HEMT)bi-directional HEMT half-bridge circuit
A half-bridge circuit comprising: an input voltage terminal conﬁgured to receive an A C input voltage without a brid g e rectiﬁer; ﬁrst and second high electron mobility transistors (HEMTs) coupled across said input voltage terminal; a control circuit conﬁgured to turn said ﬁrst and second HEMTs ON and OFF such that a desired voltage is provided at a node positioned between said ﬁrst and second HEMTs; wherein said ﬁrst and second HEMTs prevent conduction in any direction when OFF.
1. 12
  Dependent← claim 11III-nitridebi-directional HEMT half-bridge circuit
  The half-bridge circuit of claim 11, wherein said ﬁrst and second HEMTs comprise I II-nitride devices.
2. 14
  Dependent← claim 11bi-directional HEMT half-bridge circuit
  The half-bridge circuit of claim 11, wherein said inputveltage i an AC eltaie and said ﬁrst and second H EMTs are connected between a positive terminal and a negative terminal of said input voltage terminal.
3. 15
  Dependent← claim 11bi-directional HEMT half-bridge circuit
  The half-bridge circuit of claim 11, wherein the ﬁrst and second H EMTs do not include internal diodes.
4. 18
  Dependent← claim 11bi-directional HEMT half-bridge circuit
  The half-bridge of claim 11, further comprising when a voltage at said node crosses z ero.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

bi-directional HEMT half-bridge circuit

No layer stack recorded.

GaN HEMT bi-directional half-bridge circuit

GaNlow-side switch (S2)

GaNhigh-side switch (S1)

Materials

Materials described outside the worked examples.

high electron mobility transistor (HEMT)

Bidirectional Switch In Half-Bridge Circuit

III-nitride

HEMT Device Material

gallium nitride

GaN

Why these are connected

Related documents with shared materials, methods, properties, or citations.

BI-DIRECTIONAL HEMT/GaN HALF-BRIDGE CIRCUIT | Matter42 Literature