Patent
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Patent
US 12,395,090 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a synchronous rectifier of the 55 present invention.
FIG. 2 is a circuit diagram of a power converter having the D-mode GaN transistor synchronous rectifier of the present invention.
FIG. 3 is a waveform diagram of different parts of the 60 synchronous rectifier of the present invention.
FIG. 4 is a recorded waveform diagram of different parts of the synchronous rectifier of the present invention during operation.
FIG. 5A is a recorded waveform diagram of different parts 65 of a power converter of the present invention during opera- tion. B₂
FIG. 6 is an efficiency-load curve diagram of a power converter of the present invention and a conventional power converter.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Replacing the conventional diode rectifier with the D-mode GaN HEMT as the switch, the synchronous rectifier 10 possesses no forward bias between the module drain D and the module source S when con-ducting, avoiding the energy loss on the diode caused by the voltage drop, and providing better overall power transferring efficiency when the power converter is outputting a large output current and load.
The D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein the gate driver module com-prises: a third switch, connected between the power providing end and the first driving end, and having a control end connected to the drive control end; a fourth switch, connected between the second driving end and the reference end, and having a control end connected to the drive control end; when a voltage on the drive control end of the gate driver module is a threshold voltage for the third switch higher than a voltage on the reference end, the third switch is turned on; when the voltage on the drive control end of the gate driver module is a threshold voltage for the fourth switch lower than a voltage on the power providing end, the fourth switch is turned on.
The D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein a resistance of the first resistor is smaller than or equal to a resistance of the second resistor.
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
According to the characteristic of the D-mode GaN HEMT, the second switch S₂ does not have any body diode like NMOS or PMOS. Furthermore, since the first switch remains turned on during operation, the body diode DB of the first switch S₁ has extremely small influence to the circuit when operating, and when the second switch S₂ is switched to be turned off, the recovery current in the synchronous rectifier 10 is very low. Therefore, the voltage ringing effect when the synchronous rectifier 10 cutoff is reduced and the electromagnetic interference generated is also lowered.
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 2, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
Since the D-mode GaN HEMT has a small output capacitor, the synchronous rectifier 10 has a smaller voltage ringing when turned on, such that the voltage curve is also smoother during the charging state of the windings, and the electromagnetic interference caused by the transformer is further reduced. Even though numerous characteristics and advantages of the present invention have been set forth in the foregoing description, together with details of the structure and func-tion of the invention, the disclosure is illustrative only. Changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the invention to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed. What is claimed is:
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 3, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
Layer stacks claimed or described, ordered top of device to substrate.
D-mode GaN transistor synchronous rectifier
power converter with D-mode GaN transistor synchronous rectifier
No layer stack recorded.
Materials described outside the worked examples.
D-mode GaN HEMT
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a circuit diagram of a power converter having the D-mode GaN transistor synchronous rectifier of the present invention.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
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Patent
Atlas literature
Patent
US 12,395,090 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a synchronous rectifier of the 55 present invention.
FIG. 2 is a circuit diagram of a power converter having the D-mode GaN transistor synchronous rectifier of the present invention.
FIG. 3 is a waveform diagram of different parts of the 60 synchronous rectifier of the present invention.
FIG. 4 is a recorded waveform diagram of different parts of the synchronous rectifier of the present invention during operation.
FIG. 5A is a recorded waveform diagram of different parts 65 of a power converter of the present invention during opera- tion. B₂
FIG. 6 is an efficiency-load curve diagram of a power converter of the present invention and a conventional power converter.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Replacing the conventional diode rectifier with the D-mode GaN HEMT as the switch, the synchronous rectifier 10 possesses no forward bias between the module drain D and the module source S when con-ducting, avoiding the energy loss on the diode caused by the voltage drop, and providing better overall power transferring efficiency when the power converter is outputting a large output current and load.
The D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein the gate driver module com-prises: a third switch, connected between the power providing end and the first driving end, and having a control end connected to the drive control end; a fourth switch, connected between the second driving end and the reference end, and having a control end connected to the drive control end; when a voltage on the drive control end of the gate driver module is a threshold voltage for the third switch higher than a voltage on the reference end, the third switch is turned on; when the voltage on the drive control end of the gate driver module is a threshold voltage for the fourth switch lower than a voltage on the power providing end, the fourth switch is turned on.
The D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein a resistance of the first resistor is smaller than or equal to a resistance of the second resistor.
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
According to the characteristic of the D-mode GaN HEMT, the second switch S₂ does not have any body diode like NMOS or PMOS. Furthermore, since the first switch remains turned on during operation, the body diode DB of the first switch S₁ has extremely small influence to the circuit when operating, and when the second switch S₂ is switched to be turned off, the recovery current in the synchronous rectifier 10 is very low. Therefore, the voltage ringing effect when the synchronous rectifier 10 cutoff is reduced and the electromagnetic interference generated is also lowered.
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 2, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
Since the D-mode GaN HEMT has a small output capacitor, the synchronous rectifier 10 has a smaller voltage ringing when turned on, such that the voltage curve is also smoother during the charging state of the windings, and the electromagnetic interference caused by the transformer is further reduced. Even though numerous characteristics and advantages of the present invention have been set forth in the foregoing description, together with details of the structure and func-tion of the invention, the disclosure is illustrative only. Changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the invention to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed. What is claimed is:
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 3, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
Layer stacks claimed or described, ordered top of device to substrate.
D-mode GaN transistor synchronous rectifier
power converter with D-mode GaN transistor synchronous rectifier
No layer stack recorded.
Materials described outside the worked examples.
D-mode GaN HEMT
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a circuit diagram of a power converter having the D-mode GaN transistor synchronous rectifier of the present invention.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
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Patent
Atlas literature
Patent
US 12,395,090 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a synchronous rectifier of the 55 present invention.
FIG. 2 is a circuit diagram of a power converter having the D-mode GaN transistor synchronous rectifier of the present invention.
FIG. 3 is a waveform diagram of different parts of the 60 synchronous rectifier of the present invention.
FIG. 4 is a recorded waveform diagram of different parts of the synchronous rectifier of the present invention during operation.
FIG. 5A is a recorded waveform diagram of different parts 65 of a power converter of the present invention during opera- tion. B₂
FIG. 6 is an efficiency-load curve diagram of a power converter of the present invention and a conventional power converter.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Replacing the conventional diode rectifier with the D-mode GaN HEMT as the switch, the synchronous rectifier 10 possesses no forward bias between the module drain D and the module source S when con-ducting, avoiding the energy loss on the diode caused by the voltage drop, and providing better overall power transferring efficiency when the power converter is outputting a large output current and load.
The D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein the gate driver module com-prises: a third switch, connected between the power providing end and the first driving end, and having a control end connected to the drive control end; a fourth switch, connected between the second driving end and the reference end, and having a control end connected to the drive control end; when a voltage on the drive control end of the gate driver module is a threshold voltage for the third switch higher than a voltage on the reference end, the third switch is turned on; when the voltage on the drive control end of the gate driver module is a threshold voltage for the fourth switch lower than a voltage on the power providing end, the fourth switch is turned on.
The D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein a resistance of the first resistor is smaller than or equal to a resistance of the second resistor.
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
According to the characteristic of the D-mode GaN HEMT, the second switch S₂ does not have any body diode like NMOS or PMOS. Furthermore, since the first switch remains turned on during operation, the body diode DB of the first switch S₁ has extremely small influence to the circuit when operating, and when the second switch S₂ is switched to be turned off, the recovery current in the synchronous rectifier 10 is very low. Therefore, the voltage ringing effect when the synchronous rectifier 10 cutoff is reduced and the electromagnetic interference generated is also lowered.
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 2, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
Since the D-mode GaN HEMT has a small output capacitor, the synchronous rectifier 10 has a smaller voltage ringing when turned on, such that the voltage curve is also smoother during the charging state of the windings, and the electromagnetic interference caused by the transformer is further reduced. Even though numerous characteristics and advantages of the present invention have been set forth in the foregoing description, together with details of the structure and func-tion of the invention, the disclosure is illustrative only. Changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the invention to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed. What is claimed is:
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 3, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
Layer stacks claimed or described, ordered top of device to substrate.
D-mode GaN transistor synchronous rectifier
power converter with D-mode GaN transistor synchronous rectifier
No layer stack recorded.
Materials described outside the worked examples.
D-mode GaN HEMT
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a circuit diagram of a power converter having the D-mode GaN transistor synchronous rectifier of the present invention.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,395,090 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a circuit diagram of a synchronous rectifier of the 55 present invention.
FIG. 2 is a circuit diagram of a power converter having the D-mode GaN transistor synchronous rectifier of the present invention.
FIG. 3 is a waveform diagram of different parts of the 60 synchronous rectifier of the present invention.
FIG. 4 is a recorded waveform diagram of different parts of the synchronous rectifier of the present invention during operation.
FIG. 5A is a recorded waveform diagram of different parts 65 of a power converter of the present invention during opera- tion. B₂
FIG. 6 is an efficiency-load curve diagram of a power converter of the present invention and a conventional power converter.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Replacing the conventional diode rectifier with the D-mode GaN HEMT as the switch, the synchronous rectifier 10 possesses no forward bias between the module drain D and the module source S when con-ducting, avoiding the energy loss on the diode caused by the voltage drop, and providing better overall power transferring efficiency when the power converter is outputting a large output current and load.
The D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein the gate driver module com-prises: a third switch, connected between the power providing end and the first driving end, and having a control end connected to the drive control end; a fourth switch, connected between the second driving end and the reference end, and having a control end connected to the drive control end; when a voltage on the drive control end of the gate driver module is a threshold voltage for the third switch higher than a voltage on the reference end, the third switch is turned on; when the voltage on the drive control end of the gate driver module is a threshold voltage for the fourth switch lower than a voltage on the power providing end, the fourth switch is turned on.
The D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein a resistance of the first resistor is smaller than or equal to a resistance of the second resistor.
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 1, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
According to the characteristic of the D-mode GaN HEMT, the second switch S₂ does not have any body diode like NMOS or PMOS. Furthermore, since the first switch remains turned on during operation, the body diode DB of the first switch S₁ has extremely small influence to the circuit when operating, and when the second switch S₂ is switched to be turned off, the recovery current in the synchronous rectifier 10 is very low. Therefore, the voltage ringing effect when the synchronous rectifier 10 cutoff is reduced and the electromagnetic interference generated is also lowered.
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 2, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
Since the D-mode GaN HEMT has a small output capacitor, the synchronous rectifier 10 has a smaller voltage ringing when turned on, such that the voltage curve is also smoother during the charging state of the windings, and the electromagnetic interference caused by the transformer is further reduced. Even though numerous characteristics and advantages of the present invention have been set forth in the foregoing description, together with details of the structure and func-tion of the invention, the disclosure is illustrative only. Changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the invention to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed. What is claimed is:
A power converter having a D-mode GaN transistor synchronous rectifier, comprising: an isolation transformer, including a primary side winding and a secondary side winding; a primary side circuit, electrically connected to the pri-mary side winding, including a power switch connected between a negative end of the primary side winding and a ground end; and a secondary side circuit, including the D-mode GaN transistor synchronous rectifier as claimed in claim 3, wherein the positive winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a positive end of the secondary side winding, and the negative winding connection end of the D-mode GaN transistor synchronous rectifier is con-nected to a negative end of the secondary side winding.
Layer stacks claimed or described, ordered top of device to substrate.
D-mode GaN transistor synchronous rectifier
power converter with D-mode GaN transistor synchronous rectifier
No layer stack recorded.
Materials described outside the worked examples.
D-mode GaN HEMT
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a circuit diagram of a power converter having the D-mode GaN transistor synchronous rectifier of the present invention.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Related documents with shared materials, methods, properties, or citations.
