Patent
US 12,603,491 B2GALLIUM NITRIDE-BASED ACTIVE CURRENT FLOWBACK PREVENTION
Arash Nejadpak, Jeffery Paul Mendow
Blue Origin Manufacturing, LLC, Huntsville, AL (US)·Apr. 14, 2026·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 12,603,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of an illustrative short circuit prevention environment in which a power regulator trans- 5 mits current toward a DC bus.
FIG. 2 is a more detailed block diagram of the illustrative short circuit prevention environment located within an extra- terrestrial vehicle.
FIG. 3 is a block diagram of an illustrative electrical 10 system in which multiple GaN-based current flowback pre- vention systems are present.
FIG. 4 is a flow diagram depicting an example active current flowback prevention routine illustratively imple- mented by a current flowback prevention system, …
FIG. 5 is another flow diagram depicting an example active current flowback prevention routine illustratively implemented by a current flowback prevention system, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system for preventing current flowback, the system comprising: a Gallium Nitride (GaN) device comprising a source, a drain, and a gate; electrical equipment, wherein an output of the electrical equipment is coupled to the source of the GaN device; a latch, wherein an output of the latch is coupled to the gate of the GaN device; and a current sense circuit, wherein an output of the current sense circuit is coupled to a first input of the latch, wherein an input of the current sense circuit is coupled to the output of the electrical equipment and the source of the GaN device, and wherein the current sense circuit is configured to: detect a direction of current output by the electrical equipment; and output a low signal to the first input of the latch and a high signal to a second input of the latch to cause the latch to output a second low signal that causes the GaN device to prevent a flow of current from the drain of the GaN device to the source of the GaN device in response to detecting that the direction of current output by the electrical equipment is from the source of the GaN device to the output of the electrical equipment.
The system of claim 1, further comprising a gate drive circuit, wherein the gate drive circuit is coupled between the output of the latch and the gate of the GaN device, wherein the gate drive circuit is configured to amplify the second low signal output by the latch and output the amplified second low signal to the gate of the GaN device.
The system of claim 1, wherein the second input comprises an enable input.
The system of claim 1, wherein the current sense circuit is further configured to: detect that a second direction of the current output by the electrical equipment is from the output of the electrical equipment to the source of the GaN device at a first time before a time at which the direction of the current is detected; and cause the latch to drive the gate of the GaN device, wherein driving the gate of the GaN device causes the GaN device to allow the current to flow from the source of the GaN device to the drain of the GaN device.
The system of claim 1, wherein the drain of the GaN device is coupled to a high voltage distribution box.
The system of claim 1, wherein the second low signal has a voltage level that falls below a threshold voltage level.
The system of claim 1, wherein the electrical equipment comprises a power regulator.
The system of claim 1, wherein the system is comprised within one of a spacecraft, an automobile, a train, a plane, or a ship.
A method for preventing current flowback, the method comprising: detecting a first direction of current from a power regu-lator, wherein an output of the power regulator is coupled to a source of a Gallium Nitride (GaN) device; causing a gate of the GaN device to be driven in response to detecting that the direction of current from the power regulator is in a direction of the source of the GaN device; detecting a second direction of the current from the power regulator; and outputting a low signal to a first input of a latch and a high signal to a second input of the latch to cause the gate of the GaN device to no longer be driven in response to detecting that the second direction of the current from the power regulator is in a direction away from the source of the GaN device.
The method of claim 10, wherein outputting a low signal to a first input of a latch and a high signal to a second input of the latch further comprises causing the latch coupled to the gate of the GaN device to output the low signal below a threshold voltage level.
The method of claim 10, wherein the second input of the latch comprises an enable input.
The method of claim 10, wherein a drain of the GaN device is coupled to a high voltage distribution box.
The method of claim 10, wherein the power regulator comprises a fuel cell power regulator.
The method of claim 10, wherein the power regulator and the GaN device are comprised within one of a space-craft, an automobile, a train, a plane, or a ship.
A method for preventing current flowback, the method comprising: detecting a direction of current output by electrical equip-ment, wherein an output of the electrical equipment is coupled to a source of a Gallium Nitride (GaN) device; causing a gate of the GaN device to be driven in response to detecting that the direction of the current output by the electrical equipment is in a direction of the source of the GaN device; detecting a change in the direction of the current output by the electrical equipment; and outputting a low signal to a first input of a latch and a high signal to a second input of the latch to cause the gate of the GaN device to no longer be driven.
The method of claim 18, wherein outputting a low signal to a first input of a latch and a high signal to a second input of the latch further comprises causing the latch coupled to the gate of the GaN device to output the low signal below a threshold voltage level.
The method of claim 18, wherein the electrical equip-ment and the GaN device are comprised within one of a spacecraft, an automobile, a train, a plane, or a ship. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor for current flowback prevention
Materials described outside the worked examples.
Gallium Nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a block diagram of an illustrative electrical 10 system in which multiple GaN-based current flowback pre- vention systems are present.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 16
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,603,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of an illustrative short circuit prevention environment in which a power regulator trans- 5 mits current toward a DC bus.
FIG. 2 is a more detailed block diagram of the illustrative short circuit prevention environment located within an extra- terrestrial vehicle.
FIG. 3 is a block diagram of an illustrative electrical 10 system in which multiple GaN-based current flowback pre- vention systems are present.
FIG. 4 is a flow diagram depicting an example active current flowback prevention routine illustratively imple- mented by a current flowback prevention system, …
FIG. 5 is another flow diagram depicting an example active current flowback prevention routine illustratively implemented by a current flowback prevention system, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system for preventing current flowback, the system comprising: a Gallium Nitride (GaN) device comprising a source, a drain, and a gate; electrical equipment, wherein an output of the electrical equipment is coupled to the source of the GaN device; a latch, wherein an output of the latch is coupled to the gate of the GaN device; and a current sense circuit, wherein an output of the current sense circuit is coupled to a first input of the latch, wherein an input of the current sense circuit is coupled to the output of the electrical equipment and the source of the GaN device, and wherein the current sense circuit is configured to: detect a direction of current output by the electrical equipment; and output a low signal to the first input of the latch and a high signal to a second input of the latch to cause the latch to output a second low signal that causes the GaN device to prevent a flow of current from the drain of the GaN device to the source of the GaN device in response to detecting that the direction of current output by the electrical equipment is from the source of the GaN device to the output of the electrical equipment.
The system of claim 1, further comprising a gate drive circuit, wherein the gate drive circuit is coupled between the output of the latch and the gate of the GaN device, wherein the gate drive circuit is configured to amplify the second low signal output by the latch and output the amplified second low signal to the gate of the GaN device.
The system of claim 1, wherein the second input comprises an enable input.
The system of claim 1, wherein the current sense circuit is further configured to: detect that a second direction of the current output by the electrical equipment is from the output of the electrical equipment to the source of the GaN device at a first time before a time at which the direction of the current is detected; and cause the latch to drive the gate of the GaN device, wherein driving the gate of the GaN device causes the GaN device to allow the current to flow from the source of the GaN device to the drain of the GaN device.
The system of claim 1, wherein the drain of the GaN device is coupled to a high voltage distribution box.
The system of claim 1, wherein the second low signal has a voltage level that falls below a threshold voltage level.
The system of claim 1, wherein the electrical equipment comprises a power regulator.
The system of claim 1, wherein the system is comprised within one of a spacecraft, an automobile, a train, a plane, or a ship.
A method for preventing current flowback, the method comprising: detecting a first direction of current from a power regu-lator, wherein an output of the power regulator is coupled to a source of a Gallium Nitride (GaN) device; causing a gate of the GaN device to be driven in response to detecting that the direction of current from the power regulator is in a direction of the source of the GaN device; detecting a second direction of the current from the power regulator; and outputting a low signal to a first input of a latch and a high signal to a second input of the latch to cause the gate of the GaN device to no longer be driven in response to detecting that the second direction of the current from the power regulator is in a direction away from the source of the GaN device.
The method of claim 10, wherein outputting a low signal to a first input of a latch and a high signal to a second input of the latch further comprises causing the latch coupled to the gate of the GaN device to output the low signal below a threshold voltage level.
The method of claim 10, wherein the second input of the latch comprises an enable input.
The method of claim 10, wherein a drain of the GaN device is coupled to a high voltage distribution box.
The method of claim 10, wherein the power regulator comprises a fuel cell power regulator.
The method of claim 10, wherein the power regulator and the GaN device are comprised within one of a space-craft, an automobile, a train, a plane, or a ship.
A method for preventing current flowback, the method comprising: detecting a direction of current output by electrical equip-ment, wherein an output of the electrical equipment is coupled to a source of a Gallium Nitride (GaN) device; causing a gate of the GaN device to be driven in response to detecting that the direction of the current output by the electrical equipment is in a direction of the source of the GaN device; detecting a change in the direction of the current output by the electrical equipment; and outputting a low signal to a first input of a latch and a high signal to a second input of the latch to cause the gate of the GaN device to no longer be driven.
The method of claim 18, wherein outputting a low signal to a first input of a latch and a high signal to a second input of the latch further comprises causing the latch coupled to the gate of the GaN device to output the low signal below a threshold voltage level.
The method of claim 18, wherein the electrical equip-ment and the GaN device are comprised within one of a spacecraft, an automobile, a train, a plane, or a ship. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor for current flowback prevention
Materials described outside the worked examples.
Gallium Nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a block diagram of an illustrative electrical 10 system in which multiple GaN-based current flowback pre- vention systems are present.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 16
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,603,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of an illustrative short circuit prevention environment in which a power regulator trans- 5 mits current toward a DC bus.
FIG. 2 is a more detailed block diagram of the illustrative short circuit prevention environment located within an extra- terrestrial vehicle.
FIG. 3 is a block diagram of an illustrative electrical 10 system in which multiple GaN-based current flowback pre- vention systems are present.
FIG. 4 is a flow diagram depicting an example active current flowback prevention routine illustratively imple- mented by a current flowback prevention system, …
FIG. 5 is another flow diagram depicting an example active current flowback prevention routine illustratively implemented by a current flowback prevention system, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system for preventing current flowback, the system comprising: a Gallium Nitride (GaN) device comprising a source, a drain, and a gate; electrical equipment, wherein an output of the electrical equipment is coupled to the source of the GaN device; a latch, wherein an output of the latch is coupled to the gate of the GaN device; and a current sense circuit, wherein an output of the current sense circuit is coupled to a first input of the latch, wherein an input of the current sense circuit is coupled to the output of the electrical equipment and the source of the GaN device, and wherein the current sense circuit is configured to: detect a direction of current output by the electrical equipment; and output a low signal to the first input of the latch and a high signal to a second input of the latch to cause the latch to output a second low signal that causes the GaN device to prevent a flow of current from the drain of the GaN device to the source of the GaN device in response to detecting that the direction of current output by the electrical equipment is from the source of the GaN device to the output of the electrical equipment.
The system of claim 1, further comprising a gate drive circuit, wherein the gate drive circuit is coupled between the output of the latch and the gate of the GaN device, wherein the gate drive circuit is configured to amplify the second low signal output by the latch and output the amplified second low signal to the gate of the GaN device.
The system of claim 1, wherein the second input comprises an enable input.
The system of claim 1, wherein the current sense circuit is further configured to: detect that a second direction of the current output by the electrical equipment is from the output of the electrical equipment to the source of the GaN device at a first time before a time at which the direction of the current is detected; and cause the latch to drive the gate of the GaN device, wherein driving the gate of the GaN device causes the GaN device to allow the current to flow from the source of the GaN device to the drain of the GaN device.
The system of claim 1, wherein the drain of the GaN device is coupled to a high voltage distribution box.
The system of claim 1, wherein the second low signal has a voltage level that falls below a threshold voltage level.
The system of claim 1, wherein the electrical equipment comprises a power regulator.
The system of claim 1, wherein the system is comprised within one of a spacecraft, an automobile, a train, a plane, or a ship.
A method for preventing current flowback, the method comprising: detecting a first direction of current from a power regu-lator, wherein an output of the power regulator is coupled to a source of a Gallium Nitride (GaN) device; causing a gate of the GaN device to be driven in response to detecting that the direction of current from the power regulator is in a direction of the source of the GaN device; detecting a second direction of the current from the power regulator; and outputting a low signal to a first input of a latch and a high signal to a second input of the latch to cause the gate of the GaN device to no longer be driven in response to detecting that the second direction of the current from the power regulator is in a direction away from the source of the GaN device.
The method of claim 10, wherein outputting a low signal to a first input of a latch and a high signal to a second input of the latch further comprises causing the latch coupled to the gate of the GaN device to output the low signal below a threshold voltage level.
The method of claim 10, wherein the second input of the latch comprises an enable input.
The method of claim 10, wherein a drain of the GaN device is coupled to a high voltage distribution box.
The method of claim 10, wherein the power regulator comprises a fuel cell power regulator.
The method of claim 10, wherein the power regulator and the GaN device are comprised within one of a space-craft, an automobile, a train, a plane, or a ship.
A method for preventing current flowback, the method comprising: detecting a direction of current output by electrical equip-ment, wherein an output of the electrical equipment is coupled to a source of a Gallium Nitride (GaN) device; causing a gate of the GaN device to be driven in response to detecting that the direction of the current output by the electrical equipment is in a direction of the source of the GaN device; detecting a change in the direction of the current output by the electrical equipment; and outputting a low signal to a first input of a latch and a high signal to a second input of the latch to cause the gate of the GaN device to no longer be driven.
The method of claim 18, wherein outputting a low signal to a first input of a latch and a high signal to a second input of the latch further comprises causing the latch coupled to the gate of the GaN device to output the low signal below a threshold voltage level.
The method of claim 18, wherein the electrical equip-ment and the GaN device are comprised within one of a spacecraft, an automobile, a train, a plane, or a ship. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor for current flowback prevention
Materials described outside the worked examples.
Gallium Nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a block diagram of an illustrative electrical 10 system in which multiple GaN-based current flowback pre- vention systems are present.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 16
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,603,491 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of an illustrative short circuit prevention environment in which a power regulator trans- 5 mits current toward a DC bus.
FIG. 2 is a more detailed block diagram of the illustrative short circuit prevention environment located within an extra- terrestrial vehicle.
FIG. 3 is a block diagram of an illustrative electrical 10 system in which multiple GaN-based current flowback pre- vention systems are present.
FIG. 4 is a flow diagram depicting an example active current flowback prevention routine illustratively imple- mented by a current flowback prevention system, …
FIG. 5 is another flow diagram depicting an example active current flowback prevention routine illustratively implemented by a current flowback prevention system, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system for preventing current flowback, the system comprising: a Gallium Nitride (GaN) device comprising a source, a drain, and a gate; electrical equipment, wherein an output of the electrical equipment is coupled to the source of the GaN device; a latch, wherein an output of the latch is coupled to the gate of the GaN device; and a current sense circuit, wherein an output of the current sense circuit is coupled to a first input of the latch, wherein an input of the current sense circuit is coupled to the output of the electrical equipment and the source of the GaN device, and wherein the current sense circuit is configured to: detect a direction of current output by the electrical equipment; and output a low signal to the first input of the latch and a high signal to a second input of the latch to cause the latch to output a second low signal that causes the GaN device to prevent a flow of current from the drain of the GaN device to the source of the GaN device in response to detecting that the direction of current output by the electrical equipment is from the source of the GaN device to the output of the electrical equipment.
The system of claim 1, further comprising a gate drive circuit, wherein the gate drive circuit is coupled between the output of the latch and the gate of the GaN device, wherein the gate drive circuit is configured to amplify the second low signal output by the latch and output the amplified second low signal to the gate of the GaN device.
The system of claim 1, wherein the second input comprises an enable input.
The system of claim 1, wherein the current sense circuit is further configured to: detect that a second direction of the current output by the electrical equipment is from the output of the electrical equipment to the source of the GaN device at a first time before a time at which the direction of the current is detected; and cause the latch to drive the gate of the GaN device, wherein driving the gate of the GaN device causes the GaN device to allow the current to flow from the source of the GaN device to the drain of the GaN device.
The system of claim 1, wherein the drain of the GaN device is coupled to a high voltage distribution box.
The system of claim 1, wherein the second low signal has a voltage level that falls below a threshold voltage level.
The system of claim 1, wherein the electrical equipment comprises a power regulator.
The system of claim 1, wherein the system is comprised within one of a spacecraft, an automobile, a train, a plane, or a ship.
A method for preventing current flowback, the method comprising: detecting a first direction of current from a power regu-lator, wherein an output of the power regulator is coupled to a source of a Gallium Nitride (GaN) device; causing a gate of the GaN device to be driven in response to detecting that the direction of current from the power regulator is in a direction of the source of the GaN device; detecting a second direction of the current from the power regulator; and outputting a low signal to a first input of a latch and a high signal to a second input of the latch to cause the gate of the GaN device to no longer be driven in response to detecting that the second direction of the current from the power regulator is in a direction away from the source of the GaN device.
The method of claim 10, wherein outputting a low signal to a first input of a latch and a high signal to a second input of the latch further comprises causing the latch coupled to the gate of the GaN device to output the low signal below a threshold voltage level.
The method of claim 10, wherein the second input of the latch comprises an enable input.
The method of claim 10, wherein a drain of the GaN device is coupled to a high voltage distribution box.
The method of claim 10, wherein the power regulator comprises a fuel cell power regulator.
The method of claim 10, wherein the power regulator and the GaN device are comprised within one of a space-craft, an automobile, a train, a plane, or a ship.
A method for preventing current flowback, the method comprising: detecting a direction of current output by electrical equip-ment, wherein an output of the electrical equipment is coupled to a source of a Gallium Nitride (GaN) device; causing a gate of the GaN device to be driven in response to detecting that the direction of the current output by the electrical equipment is in a direction of the source of the GaN device; detecting a change in the direction of the current output by the electrical equipment; and outputting a low signal to a first input of a latch and a high signal to a second input of the latch to cause the gate of the GaN device to no longer be driven.
The method of claim 18, wherein outputting a low signal to a first input of a latch and a high signal to a second input of the latch further comprises causing the latch coupled to the gate of the GaN device to output the low signal below a threshold voltage level.
The method of claim 18, wherein the electrical equip-ment and the GaN device are comprised within one of a spacecraft, an automobile, a train, a plane, or a ship. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor for current flowback prevention
Materials described outside the worked examples.
Gallium Nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a block diagram of an illustrative electrical 10 system in which multiple GaN-based current flowback pre- vention systems are present.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 16
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