Patent
Atlas literature
Patent
US 10,804,359Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 3A Description GEOMETR T C MAN I PULATION OF 2DEG REG I ON IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR BACKGROUND In the manufacture of integrated …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The application has been amended as follows: a. In claim 2, line 1, replace "the vertical thickness" with -the thinnest vertical thickness--. b. In claim 2, line 2, replace "the vertical thickness" with -the thickest vertical thickness--. c. In claim 10, line 1, replace "the vertical thickness" with -the first vertical thickness--. d. In claim 10, line 2, replace "the vertical thickness" with -the second vertical thickness--. SVG 15772742.09-14-2020.KF₃₄Z₉NJRXEAPX2.CLM.1.svg 0.25 6.93 Black and white d ocument, thickness--. + 2020 f. In claim 36, line $, replace "the thickest vertical thickness" with -the second vertical thickness--.
Claims 1-2, 6, 9-10, 14, 26-27, 30 and 32-42 are allowed.
The following is an examiner's statement of reasons for allowance: the prior art of record fails to disclose/suggest (claim 1) wherein a bottom surface of the first source or drain region is lower than a top surface of the first layer, wherein a bottom surface of the second source or drain region is lower than the top surface of the first layer, and, a second layer over the top surface of the first layer and adjacent one side of the gate such that the second layer is between the gate and the first source or drain region, the second layer comprising a I ll -N compound, wherein the second layer has a thinnest vertical thickness at a point closest to the gate and a thickest vertical thickness at a point farthest from the gate as recited within the context of the claim, (claim 9) wherein a bottom surface of the first source or drain region is lower than a top surface of the first region, wherein a bottom surface of the second source or drain region is lower than the to p surface of the first region, and, a second region com p rising a I II-N
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor with 2DEG source/drain extension
Materials described outside the worked examples.
III-N compound
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A Description GEOMETR T C MAN I PULATION OF 2DEG REG I ON IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR BACKGROUND In the manufacture of integrated …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,804,359Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 3A Description GEOMETR T C MAN I PULATION OF 2DEG REG I ON IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR BACKGROUND In the manufacture of integrated …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The application has been amended as follows: a. In claim 2, line 1, replace "the vertical thickness" with -the thinnest vertical thickness--. b. In claim 2, line 2, replace "the vertical thickness" with -the thickest vertical thickness--. c. In claim 10, line 1, replace "the vertical thickness" with -the first vertical thickness--. d. In claim 10, line 2, replace "the vertical thickness" with -the second vertical thickness--. SVG 15772742.09-14-2020.KF₃₄Z₉NJRXEAPX2.CLM.1.svg 0.25 6.93 Black and white d ocument, thickness--. + 2020 f. In claim 36, line $, replace "the thickest vertical thickness" with -the second vertical thickness--.
Claims 1-2, 6, 9-10, 14, 26-27, 30 and 32-42 are allowed.
The following is an examiner's statement of reasons for allowance: the prior art of record fails to disclose/suggest (claim 1) wherein a bottom surface of the first source or drain region is lower than a top surface of the first layer, wherein a bottom surface of the second source or drain region is lower than the top surface of the first layer, and, a second layer over the top surface of the first layer and adjacent one side of the gate such that the second layer is between the gate and the first source or drain region, the second layer comprising a I ll -N compound, wherein the second layer has a thinnest vertical thickness at a point closest to the gate and a thickest vertical thickness at a point farthest from the gate as recited within the context of the claim, (claim 9) wherein a bottom surface of the first source or drain region is lower than a top surface of the first region, wherein a bottom surface of the second source or drain region is lower than the to p surface of the first region, and, a second region com p rising a I II-N
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor with 2DEG source/drain extension
Materials described outside the worked examples.
III-N compound
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A Description GEOMETR T C MAN I PULATION OF 2DEG REG I ON IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR BACKGROUND In the manufacture of integrated …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,804,359Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 3A Description GEOMETR T C MAN I PULATION OF 2DEG REG I ON IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR BACKGROUND In the manufacture of integrated …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The application has been amended as follows: a. In claim 2, line 1, replace "the vertical thickness" with -the thinnest vertical thickness--. b. In claim 2, line 2, replace "the vertical thickness" with -the thickest vertical thickness--. c. In claim 10, line 1, replace "the vertical thickness" with -the first vertical thickness--. d. In claim 10, line 2, replace "the vertical thickness" with -the second vertical thickness--. SVG 15772742.09-14-2020.KF₃₄Z₉NJRXEAPX2.CLM.1.svg 0.25 6.93 Black and white d ocument, thickness--. + 2020 f. In claim 36, line $, replace "the thickest vertical thickness" with -the second vertical thickness--.
Claims 1-2, 6, 9-10, 14, 26-27, 30 and 32-42 are allowed.
The following is an examiner's statement of reasons for allowance: the prior art of record fails to disclose/suggest (claim 1) wherein a bottom surface of the first source or drain region is lower than a top surface of the first layer, wherein a bottom surface of the second source or drain region is lower than the top surface of the first layer, and, a second layer over the top surface of the first layer and adjacent one side of the gate such that the second layer is between the gate and the first source or drain region, the second layer comprising a I ll -N compound, wherein the second layer has a thinnest vertical thickness at a point closest to the gate and a thickest vertical thickness at a point farthest from the gate as recited within the context of the claim, (claim 9) wherein a bottom surface of the first source or drain region is lower than a top surface of the first region, wherein a bottom surface of the second source or drain region is lower than the to p surface of the first region, and, a second region com p rising a I II-N
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor with 2DEG source/drain extension
Materials described outside the worked examples.
III-N compound
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A Description GEOMETR T C MAN I PULATION OF 2DEG REG I ON IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR BACKGROUND In the manufacture of integrated …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,804,359Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 3A Description GEOMETR T C MAN I PULATION OF 2DEG REG I ON IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR BACKGROUND In the manufacture of integrated …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
The application has been amended as follows: a. In claim 2, line 1, replace "the vertical thickness" with -the thinnest vertical thickness--. b. In claim 2, line 2, replace "the vertical thickness" with -the thickest vertical thickness--. c. In claim 10, line 1, replace "the vertical thickness" with -the first vertical thickness--. d. In claim 10, line 2, replace "the vertical thickness" with -the second vertical thickness--. SVG 15772742.09-14-2020.KF₃₄Z₉NJRXEAPX2.CLM.1.svg 0.25 6.93 Black and white d ocument, thickness--. + 2020 f. In claim 36, line $, replace "the thickest vertical thickness" with -the second vertical thickness--.
Claims 1-2, 6, 9-10, 14, 26-27, 30 and 32-42 are allowed.
The following is an examiner's statement of reasons for allowance: the prior art of record fails to disclose/suggest (claim 1) wherein a bottom surface of the first source or drain region is lower than a top surface of the first layer, wherein a bottom surface of the second source or drain region is lower than the top surface of the first layer, and, a second layer over the top surface of the first layer and adjacent one side of the gate such that the second layer is between the gate and the first source or drain region, the second layer comprising a I ll -N compound, wherein the second layer has a thinnest vertical thickness at a point closest to the gate and a thickest vertical thickness at a point farthest from the gate as recited within the context of the claim, (claim 9) wherein a bottom surface of the first source or drain region is lower than a top surface of the first region, wherein a bottom surface of the second source or drain region is lower than the to p surface of the first region, and, a second region com p rising a I II-N
Layer stacks claimed or described, ordered top of device to substrate.
GaN transistor with 2DEG source/drain extension
Materials described outside the worked examples.
III-N compound
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3A Description GEOMETR T C MAN I PULATION OF 2DEG REG I ON IN SOURCE/DRAIN EXTENSION OF GAN TRANSISTOR BACKGROUND In the manufacture of integrated …
Related documents with shared materials, methods, properties, or citations.
GAN DRIVER USING ACTIVE PRE-DRIVER WITH FEEDBACK
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