Patent
US 10,036,099PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES
MARK P. D'EVELYN, DIRK EHRENTRAUT, DERRICK S. KAMBER, BRADLEY C. DOWNEY
SORAA, Inc.·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,036,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B. The frame 100 enables seed crystals and raw material to be loaded into a suitable configuration for crystal growth prior to placement inside a …
FIG. 2C. Individual seed crystals or plates may be selected or cut to have approximately the same height, so that multiple seed crystals or plates may be …
FIG. 3B. Purging may provide for superior removal of air, moisture, and other volatile contaminants, relative to evacuation, because of the limited conductance …
FIG. 4C. From geometry, the m -plane facets ar c approximately 58% of the length of the initial a-plane seed plate. The crystal may be sliced at an PA TENT …
FIG. 5 is merely an illustration and is not intended to limit the scope of the PA TENT claims herein. On c of ordinary skill in the art will recognize that th …
FIG. 6B are diagrams illustrating a recycling operation for crystal growth according to embodiments of the pres e nt disclos ure. [0028] F I G. 7 is a diagram …
FIG. 7, may be characterized by having a non-cubic crystal structure, for example, wurtzite. Large-area surfaces 710 and 720 have cr ystallographic …
FIG. 8 is a diagram illustrating arrangement of seed plates according to embodiments of the present disclosure. [0030]
FIG. 9 is a diagram illustrating arrangement of seed plates according to embodiments of the present disclosure. [0031]
FIG. 10 is a diagram illustrating arrangement of seed plates according to embodiments of the pres e nt disclosure. [0032] FIG. I₁ A SVG …
FIG. 11B. [0092] In certain embodiments, the seed crystals have a cr ystallographic orientation such that at least one large face is a relatively fast-growing …
FIG. 12 is a diagram of a high pressure apparatus 1200 for a crystal growth. Shown is a capsule 1201 and three, four, 10, 20, 50, 100, or more seed cr ystals …
FIG. 13 is a diagram of flow chart illustrating a crystal growth process. As shown the method 1300 results in crystalline material being produced in a pressure …
FIG. 14 is a diagram showing a range of crystallographic ori e ntations suitable for s eed cr ystals for m-plan e crystal growth as used in c e rtain …
FIG. 15 depicts a block diagram of a system for growth of a gallium-containing nitride crystal. As shown, system 1500 comprises a plurality of modules and a n …
FIG. 16 is a diagram 1600 showing anoth e r rang e of crystallographic ori e ntations 1600 suitable for s ecd cr ystals for m -plane crystal growth as us e d …
FIG. 17 is a diagram showing a range of crystallographic orientations suitable for seed crystals for m -plane crystal growth as used in certain embodiments of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 15. Canceled
Canceled
: A method for growth of a plurality of gallium- containing nitride crystals, the method comprising: placing a plurality of gallium-containing nitride seed plates in a seed rack, each of the plurality of gallium-containing nitride seed plates having a first growth surface and a second growth surface that are oriented relative to each other to form a wedge shape, wherein a wedge angle e between the first growth surface and the second growth surface is between 1 degree and 60 degrees, and the first growth surface and the second growth surface have crystallographic orientations that are equivalent to one another to within 5 degrees; placing a source material, a mineralizer, and the seed rack that is supporting the plurality of gallium-containing nitride seed plates in a sealable container; introducing a nitrogen-containing solvent into the sealable container; and processing the plurality of gallium-containing nitride seed plates contained in the sealable container, wherein processing the plurality of gallium-containing nitride seed plates comprises growing a crystalline gallium-containing nitride material on the first growth surface and the second growth surface of each of the plurality of gallium- containing nitride seed plates by heating the plurality of gallium-containing nitride seed plates, the nitrogen-containing solvent, the source material, and the mineralizer disposed within the sealable container to a temperature higher than about 400 degrees Celsius. Currently amended
: The method of claim 16, wherein each of the plurality of gallium-containing nitride seed plates has a minimum lateral dimension of three centimeters, the crystallographic orientations of the first g rowth surfaces of the plurality of gallium-containing nitride seed plates are equivalent to within 5 degrees, and the crystallographic orientations of at least two of the plurality of gallium-containing nitride seed plates differs by at least 0.05 degree. Currently amended
: The method of claim 16, wherein the wedge angle e is between 1 degree and 30 degrees, and the crystallographic orientations of the first q rowth surface and the second q rowth surface are equivalent to one another to within 2 degrees. Currently amended
: The method of claim 16, wherein each of the plurality of gallium-containing nitride seed plates comprises miscut m- plane crystals, the wedge angle e between 1 degree and 10 degrees, and the crystallographic orientations of the first g rowth surface and the second growth surface are equivalent to one another to within about 2 degrees. Currently amended
: The method of claim 16, further comprising: slicing at least one m -plane-oriented crystal from one or more boule grown on one or more of the plurality of gallium-containing nitride seed plates. Previously presented
: The method of claim 16, wherein growing the crystalline gallium-containing nitride material on the first growth surface and the second growth surface is performed at a pressure higher than 2 kbar. Previously presented
: The method of claim 16, wherein the first growth surface and the second growth surface each have a lateral dimension of at least one centimeter. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates further comprise a first wedge shaped seed plate and a second wedge shaped seed plate, and the crystallographic orientation of the first growth surface of the first wedge shaped seed plate and the crystallographic orientation of the first growth surface or of the second growth surface of the second wedge shaped seed plate differ by at least 0.1 degree and less than 5 degrees. Previously presented
: The method of claim 16, wherein the sealable container comprises an autoclave. Previously presented
: The method of claim 16, wherein the sealable container comprises a capsule. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates are placed in multiple tiers of the seed rack and are separated from an inner surface of the sealable container, and in each of the multiple tiers, gallium-containing nitride seed plates are arranged in one or more rows. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates are placed in multiple tiers of the seed rack and are separated from an inner surface of the sealable container, and in each of the multiple tiers, gallium-containing nitride seed plates are arranged radially about a center of the seed rack such that a narrow end of each gallium- containing nitride seed plates faces the center of the seed rack. Previously presented
: A method for growing a gallium-containing nitride crystal, comprising: processing a plurality of gallium-containing nitride seed plates disposed within a sealable container, wherein a gallium-containing source material, a nitrogen-containing solvent, a mineralizer, and a seed rack are disposed within the sealable container, and the plurality of gallium-containing nitride seed plates are disposed on the seed rack, the plurality of gallium-containing nitride seed plates each have a first growth surface and a second growth surface, which is opposite to the first growth surface, and each have a crystallographic orientation that comprises a {1 -1 0 0 } plane crystallographic orientation that has a miscut angle towards a [000-1] direction of between 0.05 and 5 degrees and a miscut angle in a <11-20> direction less than or equal to 1 degree, the crystallographic orientations of at least two of the plurality of gallium- containing nitride seed plates differ from one another by at least 0.1 degree and less than 5 degrees towards the [000-1] direction, and wherein processing the plurality of gallium-containing nitride seed plates comprises heating the plurality of gallium-containing nitride seed plates, the nitrogen-containing solvent, the gallium-containing source material, and the mineralizer disposed with the sealable container to a temperature higher than 400 degrees Celsius. Previously presented
: The method of claim 33, further comprising: slicing at least one of {1 -1 0 0 } -plane crystals grown on one or more of the plurality of gallium-containing nitride seed plates. Previously presented
: The method of claim 33, wherein the first and second growth surfaces of the plurality of gallium-containing nitride seed plates each have a minimum lateral dimension of one centimeter. Previously presented
: The method of claim 33, wherein each of the plurality of gallium-containing nitride seed plates is attached to the seed rack in at least two positions. Previously presented
: The method of claim 33, wherein the miscut angle towards the [000-1] direction is between 1 and 5 degrees. Previously presented
38: The method of claim 33, wherein the miscut angle towards the [000-1] direction is between 0.05 degree and 2 degrees, and the miscut angle in the <11-20> direction is less than
Materials described outside the worked examples.
gallium-containing nitride seed plates
gallium-containing source material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B. Purging may provide for superior removal of air, moisture, and other volatile contaminants, relative to evacuation, because of the limited conductance …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.9–2.2 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,036,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B. The frame 100 enables seed crystals and raw material to be loaded into a suitable configuration for crystal growth prior to placement inside a …
FIG. 2C. Individual seed crystals or plates may be selected or cut to have approximately the same height, so that multiple seed crystals or plates may be …
FIG. 3B. Purging may provide for superior removal of air, moisture, and other volatile contaminants, relative to evacuation, because of the limited conductance …
FIG. 4C. From geometry, the m -plane facets ar c approximately 58% of the length of the initial a-plane seed plate. The crystal may be sliced at an PA TENT …
FIG. 5 is merely an illustration and is not intended to limit the scope of the PA TENT claims herein. On c of ordinary skill in the art will recognize that th …
FIG. 6B are diagrams illustrating a recycling operation for crystal growth according to embodiments of the pres e nt disclos ure. [0028] F I G. 7 is a diagram …
FIG. 7, may be characterized by having a non-cubic crystal structure, for example, wurtzite. Large-area surfaces 710 and 720 have cr ystallographic …
FIG. 8 is a diagram illustrating arrangement of seed plates according to embodiments of the present disclosure. [0030]
FIG. 9 is a diagram illustrating arrangement of seed plates according to embodiments of the present disclosure. [0031]
FIG. 10 is a diagram illustrating arrangement of seed plates according to embodiments of the pres e nt disclosure. [0032] FIG. I₁ A SVG …
FIG. 11B. [0092] In certain embodiments, the seed crystals have a cr ystallographic orientation such that at least one large face is a relatively fast-growing …
FIG. 12 is a diagram of a high pressure apparatus 1200 for a crystal growth. Shown is a capsule 1201 and three, four, 10, 20, 50, 100, or more seed cr ystals …
FIG. 13 is a diagram of flow chart illustrating a crystal growth process. As shown the method 1300 results in crystalline material being produced in a pressure …
FIG. 14 is a diagram showing a range of crystallographic ori e ntations suitable for s eed cr ystals for m-plan e crystal growth as used in c e rtain …
FIG. 15 depicts a block diagram of a system for growth of a gallium-containing nitride crystal. As shown, system 1500 comprises a plurality of modules and a n …
FIG. 16 is a diagram 1600 showing anoth e r rang e of crystallographic ori e ntations 1600 suitable for s ecd cr ystals for m -plane crystal growth as us e d …
FIG. 17 is a diagram showing a range of crystallographic orientations suitable for seed crystals for m -plane crystal growth as used in certain embodiments of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 15. Canceled
Canceled
: A method for growth of a plurality of gallium- containing nitride crystals, the method comprising: placing a plurality of gallium-containing nitride seed plates in a seed rack, each of the plurality of gallium-containing nitride seed plates having a first growth surface and a second growth surface that are oriented relative to each other to form a wedge shape, wherein a wedge angle e between the first growth surface and the second growth surface is between 1 degree and 60 degrees, and the first growth surface and the second growth surface have crystallographic orientations that are equivalent to one another to within 5 degrees; placing a source material, a mineralizer, and the seed rack that is supporting the plurality of gallium-containing nitride seed plates in a sealable container; introducing a nitrogen-containing solvent into the sealable container; and processing the plurality of gallium-containing nitride seed plates contained in the sealable container, wherein processing the plurality of gallium-containing nitride seed plates comprises growing a crystalline gallium-containing nitride material on the first growth surface and the second growth surface of each of the plurality of gallium- containing nitride seed plates by heating the plurality of gallium-containing nitride seed plates, the nitrogen-containing solvent, the source material, and the mineralizer disposed within the sealable container to a temperature higher than about 400 degrees Celsius. Currently amended
: The method of claim 16, wherein each of the plurality of gallium-containing nitride seed plates has a minimum lateral dimension of three centimeters, the crystallographic orientations of the first g rowth surfaces of the plurality of gallium-containing nitride seed plates are equivalent to within 5 degrees, and the crystallographic orientations of at least two of the plurality of gallium-containing nitride seed plates differs by at least 0.05 degree. Currently amended
: The method of claim 16, wherein the wedge angle e is between 1 degree and 30 degrees, and the crystallographic orientations of the first q rowth surface and the second q rowth surface are equivalent to one another to within 2 degrees. Currently amended
: The method of claim 16, wherein each of the plurality of gallium-containing nitride seed plates comprises miscut m- plane crystals, the wedge angle e between 1 degree and 10 degrees, and the crystallographic orientations of the first g rowth surface and the second growth surface are equivalent to one another to within about 2 degrees. Currently amended
: The method of claim 16, further comprising: slicing at least one m -plane-oriented crystal from one or more boule grown on one or more of the plurality of gallium-containing nitride seed plates. Previously presented
: The method of claim 16, wherein growing the crystalline gallium-containing nitride material on the first growth surface and the second growth surface is performed at a pressure higher than 2 kbar. Previously presented
: The method of claim 16, wherein the first growth surface and the second growth surface each have a lateral dimension of at least one centimeter. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates further comprise a first wedge shaped seed plate and a second wedge shaped seed plate, and the crystallographic orientation of the first growth surface of the first wedge shaped seed plate and the crystallographic orientation of the first growth surface or of the second growth surface of the second wedge shaped seed plate differ by at least 0.1 degree and less than 5 degrees. Previously presented
: The method of claim 16, wherein the sealable container comprises an autoclave. Previously presented
: The method of claim 16, wherein the sealable container comprises a capsule. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates are placed in multiple tiers of the seed rack and are separated from an inner surface of the sealable container, and in each of the multiple tiers, gallium-containing nitride seed plates are arranged in one or more rows. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates are placed in multiple tiers of the seed rack and are separated from an inner surface of the sealable container, and in each of the multiple tiers, gallium-containing nitride seed plates are arranged radially about a center of the seed rack such that a narrow end of each gallium- containing nitride seed plates faces the center of the seed rack. Previously presented
: A method for growing a gallium-containing nitride crystal, comprising: processing a plurality of gallium-containing nitride seed plates disposed within a sealable container, wherein a gallium-containing source material, a nitrogen-containing solvent, a mineralizer, and a seed rack are disposed within the sealable container, and the plurality of gallium-containing nitride seed plates are disposed on the seed rack, the plurality of gallium-containing nitride seed plates each have a first growth surface and a second growth surface, which is opposite to the first growth surface, and each have a crystallographic orientation that comprises a {1 -1 0 0 } plane crystallographic orientation that has a miscut angle towards a [000-1] direction of between 0.05 and 5 degrees and a miscut angle in a <11-20> direction less than or equal to 1 degree, the crystallographic orientations of at least two of the plurality of gallium- containing nitride seed plates differ from one another by at least 0.1 degree and less than 5 degrees towards the [000-1] direction, and wherein processing the plurality of gallium-containing nitride seed plates comprises heating the plurality of gallium-containing nitride seed plates, the nitrogen-containing solvent, the gallium-containing source material, and the mineralizer disposed with the sealable container to a temperature higher than 400 degrees Celsius. Previously presented
: The method of claim 33, further comprising: slicing at least one of {1 -1 0 0 } -plane crystals grown on one or more of the plurality of gallium-containing nitride seed plates. Previously presented
: The method of claim 33, wherein the first and second growth surfaces of the plurality of gallium-containing nitride seed plates each have a minimum lateral dimension of one centimeter. Previously presented
: The method of claim 33, wherein each of the plurality of gallium-containing nitride seed plates is attached to the seed rack in at least two positions. Previously presented
: The method of claim 33, wherein the miscut angle towards the [000-1] direction is between 1 and 5 degrees. Previously presented
38: The method of claim 33, wherein the miscut angle towards the [000-1] direction is between 0.05 degree and 2 degrees, and the miscut angle in the <11-20> direction is less than
Materials described outside the worked examples.
gallium-containing nitride seed plates
gallium-containing source material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B. Purging may provide for superior removal of air, moisture, and other volatile contaminants, relative to evacuation, because of the limited conductance …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.9–2.2 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,036,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B. The frame 100 enables seed crystals and raw material to be loaded into a suitable configuration for crystal growth prior to placement inside a …
FIG. 2C. Individual seed crystals or plates may be selected or cut to have approximately the same height, so that multiple seed crystals or plates may be …
FIG. 3B. Purging may provide for superior removal of air, moisture, and other volatile contaminants, relative to evacuation, because of the limited conductance …
FIG. 4C. From geometry, the m -plane facets ar c approximately 58% of the length of the initial a-plane seed plate. The crystal may be sliced at an PA TENT …
FIG. 5 is merely an illustration and is not intended to limit the scope of the PA TENT claims herein. On c of ordinary skill in the art will recognize that th …
FIG. 6B are diagrams illustrating a recycling operation for crystal growth according to embodiments of the pres e nt disclos ure. [0028] F I G. 7 is a diagram …
FIG. 7, may be characterized by having a non-cubic crystal structure, for example, wurtzite. Large-area surfaces 710 and 720 have cr ystallographic …
FIG. 8 is a diagram illustrating arrangement of seed plates according to embodiments of the present disclosure. [0030]
FIG. 9 is a diagram illustrating arrangement of seed plates according to embodiments of the present disclosure. [0031]
FIG. 10 is a diagram illustrating arrangement of seed plates according to embodiments of the pres e nt disclosure. [0032] FIG. I₁ A SVG …
FIG. 11B. [0092] In certain embodiments, the seed crystals have a cr ystallographic orientation such that at least one large face is a relatively fast-growing …
FIG. 12 is a diagram of a high pressure apparatus 1200 for a crystal growth. Shown is a capsule 1201 and three, four, 10, 20, 50, 100, or more seed cr ystals …
FIG. 13 is a diagram of flow chart illustrating a crystal growth process. As shown the method 1300 results in crystalline material being produced in a pressure …
FIG. 14 is a diagram showing a range of crystallographic ori e ntations suitable for s eed cr ystals for m-plan e crystal growth as used in c e rtain …
FIG. 15 depicts a block diagram of a system for growth of a gallium-containing nitride crystal. As shown, system 1500 comprises a plurality of modules and a n …
FIG. 16 is a diagram 1600 showing anoth e r rang e of crystallographic ori e ntations 1600 suitable for s ecd cr ystals for m -plane crystal growth as us e d …
FIG. 17 is a diagram showing a range of crystallographic orientations suitable for seed crystals for m -plane crystal growth as used in certain embodiments of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 15. Canceled
Canceled
: A method for growth of a plurality of gallium- containing nitride crystals, the method comprising: placing a plurality of gallium-containing nitride seed plates in a seed rack, each of the plurality of gallium-containing nitride seed plates having a first growth surface and a second growth surface that are oriented relative to each other to form a wedge shape, wherein a wedge angle e between the first growth surface and the second growth surface is between 1 degree and 60 degrees, and the first growth surface and the second growth surface have crystallographic orientations that are equivalent to one another to within 5 degrees; placing a source material, a mineralizer, and the seed rack that is supporting the plurality of gallium-containing nitride seed plates in a sealable container; introducing a nitrogen-containing solvent into the sealable container; and processing the plurality of gallium-containing nitride seed plates contained in the sealable container, wherein processing the plurality of gallium-containing nitride seed plates comprises growing a crystalline gallium-containing nitride material on the first growth surface and the second growth surface of each of the plurality of gallium- containing nitride seed plates by heating the plurality of gallium-containing nitride seed plates, the nitrogen-containing solvent, the source material, and the mineralizer disposed within the sealable container to a temperature higher than about 400 degrees Celsius. Currently amended
: The method of claim 16, wherein each of the plurality of gallium-containing nitride seed plates has a minimum lateral dimension of three centimeters, the crystallographic orientations of the first g rowth surfaces of the plurality of gallium-containing nitride seed plates are equivalent to within 5 degrees, and the crystallographic orientations of at least two of the plurality of gallium-containing nitride seed plates differs by at least 0.05 degree. Currently amended
: The method of claim 16, wherein the wedge angle e is between 1 degree and 30 degrees, and the crystallographic orientations of the first q rowth surface and the second q rowth surface are equivalent to one another to within 2 degrees. Currently amended
: The method of claim 16, wherein each of the plurality of gallium-containing nitride seed plates comprises miscut m- plane crystals, the wedge angle e between 1 degree and 10 degrees, and the crystallographic orientations of the first g rowth surface and the second growth surface are equivalent to one another to within about 2 degrees. Currently amended
: The method of claim 16, further comprising: slicing at least one m -plane-oriented crystal from one or more boule grown on one or more of the plurality of gallium-containing nitride seed plates. Previously presented
: The method of claim 16, wherein growing the crystalline gallium-containing nitride material on the first growth surface and the second growth surface is performed at a pressure higher than 2 kbar. Previously presented
: The method of claim 16, wherein the first growth surface and the second growth surface each have a lateral dimension of at least one centimeter. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates further comprise a first wedge shaped seed plate and a second wedge shaped seed plate, and the crystallographic orientation of the first growth surface of the first wedge shaped seed plate and the crystallographic orientation of the first growth surface or of the second growth surface of the second wedge shaped seed plate differ by at least 0.1 degree and less than 5 degrees. Previously presented
: The method of claim 16, wherein the sealable container comprises an autoclave. Previously presented
: The method of claim 16, wherein the sealable container comprises a capsule. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates are placed in multiple tiers of the seed rack and are separated from an inner surface of the sealable container, and in each of the multiple tiers, gallium-containing nitride seed plates are arranged in one or more rows. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates are placed in multiple tiers of the seed rack and are separated from an inner surface of the sealable container, and in each of the multiple tiers, gallium-containing nitride seed plates are arranged radially about a center of the seed rack such that a narrow end of each gallium- containing nitride seed plates faces the center of the seed rack. Previously presented
: A method for growing a gallium-containing nitride crystal, comprising: processing a plurality of gallium-containing nitride seed plates disposed within a sealable container, wherein a gallium-containing source material, a nitrogen-containing solvent, a mineralizer, and a seed rack are disposed within the sealable container, and the plurality of gallium-containing nitride seed plates are disposed on the seed rack, the plurality of gallium-containing nitride seed plates each have a first growth surface and a second growth surface, which is opposite to the first growth surface, and each have a crystallographic orientation that comprises a {1 -1 0 0 } plane crystallographic orientation that has a miscut angle towards a [000-1] direction of between 0.05 and 5 degrees and a miscut angle in a <11-20> direction less than or equal to 1 degree, the crystallographic orientations of at least two of the plurality of gallium- containing nitride seed plates differ from one another by at least 0.1 degree and less than 5 degrees towards the [000-1] direction, and wherein processing the plurality of gallium-containing nitride seed plates comprises heating the plurality of gallium-containing nitride seed plates, the nitrogen-containing solvent, the gallium-containing source material, and the mineralizer disposed with the sealable container to a temperature higher than 400 degrees Celsius. Previously presented
: The method of claim 33, further comprising: slicing at least one of {1 -1 0 0 } -plane crystals grown on one or more of the plurality of gallium-containing nitride seed plates. Previously presented
: The method of claim 33, wherein the first and second growth surfaces of the plurality of gallium-containing nitride seed plates each have a minimum lateral dimension of one centimeter. Previously presented
: The method of claim 33, wherein each of the plurality of gallium-containing nitride seed plates is attached to the seed rack in at least two positions. Previously presented
: The method of claim 33, wherein the miscut angle towards the [000-1] direction is between 1 and 5 degrees. Previously presented
38: The method of claim 33, wherein the miscut angle towards the [000-1] direction is between 0.05 degree and 2 degrees, and the miscut angle in the <11-20> direction is less than
Materials described outside the worked examples.
gallium-containing nitride seed plates
gallium-containing source material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B. Purging may provide for superior removal of air, moisture, and other volatile contaminants, relative to evacuation, because of the limited conductance …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.9–2.2 mm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,036,099Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B. The frame 100 enables seed crystals and raw material to be loaded into a suitable configuration for crystal growth prior to placement inside a …
FIG. 2C. Individual seed crystals or plates may be selected or cut to have approximately the same height, so that multiple seed crystals or plates may be …
FIG. 3B. Purging may provide for superior removal of air, moisture, and other volatile contaminants, relative to evacuation, because of the limited conductance …
FIG. 4C. From geometry, the m -plane facets ar c approximately 58% of the length of the initial a-plane seed plate. The crystal may be sliced at an PA TENT …
FIG. 5 is merely an illustration and is not intended to limit the scope of the PA TENT claims herein. On c of ordinary skill in the art will recognize that th …
FIG. 6B are diagrams illustrating a recycling operation for crystal growth according to embodiments of the pres e nt disclos ure. [0028] F I G. 7 is a diagram …
FIG. 7, may be characterized by having a non-cubic crystal structure, for example, wurtzite. Large-area surfaces 710 and 720 have cr ystallographic …
FIG. 8 is a diagram illustrating arrangement of seed plates according to embodiments of the present disclosure. [0030]
FIG. 9 is a diagram illustrating arrangement of seed plates according to embodiments of the present disclosure. [0031]
FIG. 10 is a diagram illustrating arrangement of seed plates according to embodiments of the pres e nt disclosure. [0032] FIG. I₁ A SVG …
FIG. 11B. [0092] In certain embodiments, the seed crystals have a cr ystallographic orientation such that at least one large face is a relatively fast-growing …
FIG. 12 is a diagram of a high pressure apparatus 1200 for a crystal growth. Shown is a capsule 1201 and three, four, 10, 20, 50, 100, or more seed cr ystals …
FIG. 13 is a diagram of flow chart illustrating a crystal growth process. As shown the method 1300 results in crystalline material being produced in a pressure …
FIG. 14 is a diagram showing a range of crystallographic ori e ntations suitable for s eed cr ystals for m-plan e crystal growth as used in c e rtain …
FIG. 15 depicts a block diagram of a system for growth of a gallium-containing nitride crystal. As shown, system 1500 comprises a plurality of modules and a n …
FIG. 16 is a diagram 1600 showing anoth e r rang e of crystallographic ori e ntations 1600 suitable for s ecd cr ystals for m -plane crystal growth as us e d …
FIG. 17 is a diagram showing a range of crystallographic orientations suitable for seed crystals for m -plane crystal growth as used in certain embodiments of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 15. Canceled
Canceled
: A method for growth of a plurality of gallium- containing nitride crystals, the method comprising: placing a plurality of gallium-containing nitride seed plates in a seed rack, each of the plurality of gallium-containing nitride seed plates having a first growth surface and a second growth surface that are oriented relative to each other to form a wedge shape, wherein a wedge angle e between the first growth surface and the second growth surface is between 1 degree and 60 degrees, and the first growth surface and the second growth surface have crystallographic orientations that are equivalent to one another to within 5 degrees; placing a source material, a mineralizer, and the seed rack that is supporting the plurality of gallium-containing nitride seed plates in a sealable container; introducing a nitrogen-containing solvent into the sealable container; and processing the plurality of gallium-containing nitride seed plates contained in the sealable container, wherein processing the plurality of gallium-containing nitride seed plates comprises growing a crystalline gallium-containing nitride material on the first growth surface and the second growth surface of each of the plurality of gallium- containing nitride seed plates by heating the plurality of gallium-containing nitride seed plates, the nitrogen-containing solvent, the source material, and the mineralizer disposed within the sealable container to a temperature higher than about 400 degrees Celsius. Currently amended
: The method of claim 16, wherein each of the plurality of gallium-containing nitride seed plates has a minimum lateral dimension of three centimeters, the crystallographic orientations of the first g rowth surfaces of the plurality of gallium-containing nitride seed plates are equivalent to within 5 degrees, and the crystallographic orientations of at least two of the plurality of gallium-containing nitride seed plates differs by at least 0.05 degree. Currently amended
: The method of claim 16, wherein the wedge angle e is between 1 degree and 30 degrees, and the crystallographic orientations of the first q rowth surface and the second q rowth surface are equivalent to one another to within 2 degrees. Currently amended
: The method of claim 16, wherein each of the plurality of gallium-containing nitride seed plates comprises miscut m- plane crystals, the wedge angle e between 1 degree and 10 degrees, and the crystallographic orientations of the first g rowth surface and the second growth surface are equivalent to one another to within about 2 degrees. Currently amended
: The method of claim 16, further comprising: slicing at least one m -plane-oriented crystal from one or more boule grown on one or more of the plurality of gallium-containing nitride seed plates. Previously presented
: The method of claim 16, wherein growing the crystalline gallium-containing nitride material on the first growth surface and the second growth surface is performed at a pressure higher than 2 kbar. Previously presented
: The method of claim 16, wherein the first growth surface and the second growth surface each have a lateral dimension of at least one centimeter. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates further comprise a first wedge shaped seed plate and a second wedge shaped seed plate, and the crystallographic orientation of the first growth surface of the first wedge shaped seed plate and the crystallographic orientation of the first growth surface or of the second growth surface of the second wedge shaped seed plate differ by at least 0.1 degree and less than 5 degrees. Previously presented
: The method of claim 16, wherein the sealable container comprises an autoclave. Previously presented
: The method of claim 16, wherein the sealable container comprises a capsule. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates are placed in multiple tiers of the seed rack and are separated from an inner surface of the sealable container, and in each of the multiple tiers, gallium-containing nitride seed plates are arranged in one or more rows. Previously presented
: The method of claim 16, wherein the plurality of gallium-containing nitride seed plates are placed in multiple tiers of the seed rack and are separated from an inner surface of the sealable container, and in each of the multiple tiers, gallium-containing nitride seed plates are arranged radially about a center of the seed rack such that a narrow end of each gallium- containing nitride seed plates faces the center of the seed rack. Previously presented
: A method for growing a gallium-containing nitride crystal, comprising: processing a plurality of gallium-containing nitride seed plates disposed within a sealable container, wherein a gallium-containing source material, a nitrogen-containing solvent, a mineralizer, and a seed rack are disposed within the sealable container, and the plurality of gallium-containing nitride seed plates are disposed on the seed rack, the plurality of gallium-containing nitride seed plates each have a first growth surface and a second growth surface, which is opposite to the first growth surface, and each have a crystallographic orientation that comprises a {1 -1 0 0 } plane crystallographic orientation that has a miscut angle towards a [000-1] direction of between 0.05 and 5 degrees and a miscut angle in a <11-20> direction less than or equal to 1 degree, the crystallographic orientations of at least two of the plurality of gallium- containing nitride seed plates differ from one another by at least 0.1 degree and less than 5 degrees towards the [000-1] direction, and wherein processing the plurality of gallium-containing nitride seed plates comprises heating the plurality of gallium-containing nitride seed plates, the nitrogen-containing solvent, the gallium-containing source material, and the mineralizer disposed with the sealable container to a temperature higher than 400 degrees Celsius. Previously presented
: The method of claim 33, further comprising: slicing at least one of {1 -1 0 0 } -plane crystals grown on one or more of the plurality of gallium-containing nitride seed plates. Previously presented
: The method of claim 33, wherein the first and second growth surfaces of the plurality of gallium-containing nitride seed plates each have a minimum lateral dimension of one centimeter. Previously presented
: The method of claim 33, wherein each of the plurality of gallium-containing nitride seed plates is attached to the seed rack in at least two positions. Previously presented
: The method of claim 33, wherein the miscut angle towards the [000-1] direction is between 1 and 5 degrees. Previously presented
38: The method of claim 33, wherein the miscut angle towards the [000-1] direction is between 0.05 degree and 2 degrees, and the miscut angle in the <11-20> direction is less than
Materials described outside the worked examples.
gallium-containing nitride seed plates
gallium-containing source material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B. Purging may provide for superior removal of air, moisture, and other volatile contaminants, relative to evacuation, because of the limited conductance …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.9–2.2 mm | — |
Thickness |
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