Patent
US 10,991,751PRINT SENSOR WITH GALLIUM NITRIDE LED
Jean-Francois Mainguet
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,991,751Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 diagrammatically illustrates a sectional view of a first embodiment of a papillary print sensor 100 according to the invention. The print sensor 100 comprises a semiconducting substrate 110, for example made of silicon, comprising control circuits (not shown) preferably made from a CMOS …
Figures 2A to 2D illustrate different variant distributions of the GaN LEDs 140 and the photodiodes 130, shown in a top view. In each of these variants, the photodiodes 130 are set out in a square array (or matrix) with pitch P, in which P is for example equal to 50.8 p m, or 25.4 p m, or even less. …
Figures 3A and 3B illustrate two example embodiments of polychromatic light emitting devices. On figure 3A, the GaN LEDs are distributed in blocks of three LED, in a square distribution array. Each block comprises three directly adjacent GaN LEDs (1401, 1402, 1403), emitting in the red, blue and …
Figure 4 illustrates a particularly advantageous embodiment in which the light emitting device is interlaced with pyroelectric conversion elements. Only the differences between the print sensor 400 in figure 4 and the embodiment in figure 1 will be described. The print sensor 400 in figure 4 comprises …
Figure 6 illustrates a variant of a print sensor 600 according to the invention, in which the upper electrodes of the G aN LEDs and the upper electrodes of the pyroelectric conversion elements are formed together in a single piece-. One solution consists of replacing the plurality of upper …
Figures 7 and 8 diagrammatically illustrate the principle of an active type of thermal detection.
Figure 8 illustrates a current pulse provided to the heating element 702, defined by a constant current to between instants t 1 and t 2, and zero at other times. This current pulse activates heating of the pyroelectric conversion element by the heating element 702, between instants t 1 and t 2. When …
Figure 9 illustrates a third embodiment derived from the embodiment in figure 6, in which the single conducting layer 980 is covered by a transparent electrical insulator 992 (for example SiO 2, or Si 3 N4, itself covered by a plurality of electrical resistances 993. Each of the electrical …
Figures 10 and 11 illustrate two variants in which the matrix photodetector is composed of a PiN diode array. Only the differences between the print sensor 1000 and the print sensor in figure 1 will be described. In this case, the matrix photodetector is composed of PiN diodes 1030, each extending …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-15. Canceled
Canceled
A papillary print sensor, comprising: a light emitting device and a matrix photodetector interlaced together in a same semiconducting substrate and/or above a surface of the same semiconducting substrate, the light emitting device being oriented in and/or above the surface of the same semiconducting substrate such that the light emitting device is configured to emit light radiation towards a contact surface of the papillary print sensor along an axis orthogonal to the contact surface, the matrix photodetector being sensitive to at least part of an emission spectrum of the light emitting device, and being oriented in and/or above the surface of the same semiconducting substrate such that the matrix photodetector is configured to detect light radiation backscattered through the contact surface, wherein the light emitting device is composed of at least one gallium nitride light emitting diode (LED), wherein the matrix photodetector extends on a capture surface of the papillary print sensor, and wherein the li g ht emitting device occupies a surface area on the semiconducting substrate equal to at least ten times less than a surface area occupied by the matrix photodetector. Currently amended
The papillary print sensor according to claim 16, wherein the matrix photodetector extends along a capture surface of the sensor, in a first stage of the sensor, wherein the light emitting device extends in a second stage of the sensor, and wherein the second stage extends above the first stage, the second stage being superposed above the first stage along an axis orthogonal to a plane of the capture surface. Previously presented
The papillary print sensor according to claim 16, wherein the same semiconducting substrate includes control circuits comprising a plurality of metallic connection tracks, the at least one gallium nitride LED extending above a metallic track of the control circuits. Previously presented
The papillary print sensor according to claim 16, wherein the at least one gallium nitride LED is offset from photodetectors of the matrix photodetector in longitudinal and transverse directions along a plane of a capture surface of the sensor. Previously presented
The papillary print sensor according to claim 16, wherein a distance between an upper surface of an outermost layer of the sensor on a side opposite the same semiconducting substrate, and the matrix photodetector, is less than or equal to a distribution pitch of photodetectors of the matrix photodetector. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), distributed in a distribution array with N rows and M columns, in which N and M are integers greater than 3, or of several gallium nitride LEDs, each in the form of a strip, distributed in one column or two columns of strips parallel to each other. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), distributed in a distribution array with N rows and M columns, in which N and M are integers greater than 3, or of several gallium nitride LEDs, each in the form of a strip, distributed in one column or two columns of strips parallel to each other. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is polychromatic, the at least one gallium nitride LED comprising an active LED stack covered by at least one photoluminescent conversion stack. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), the sensor further comprising a pyroelectric material extending between the gallium nitride LEDs, the pyroelectric material also extending between at least one lower electrode on a side of the same semiconducting substrate, and at least one upper electrode on another side opposite the same semiconducting substrate, so as to form an array of pyroelectric conversion elements. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of one single gallium nitride light emitting diode (LED) with a series of through openings therein, the sensor further comprising a pyroelectric material extending in the through openings of the gallium nitride LED, the pyroelectric material also extending between at least one lower electrode on a side of the same semiconducting substrate, and at least one upper electrode on another side opposite the same semiconducting substrate, so as to form an array of pyroelectric conversion elements. Previously presented
A smart phone comprising image acquisition means and a flash, and further comprising a papillary print sensor according to claim 16, wherein the flash is composed of a plurality of gallium nitride light emitting diodes (LEDs) formed on the same semiconducting substrate of the papillary print sensor. Previously presented
A method of fabricating a papillary print sensor according to claim 16, the light emitting device being composed of several gallium nitride light emitting diodes (LEDs), the method comprising: a) adding an active LED stack onto a face of the same semiconducting substrate, comprising at least first and second doped semiconducting layers with opposite types of conductivity; b) forming trenches in the active LED stack to delimit the several gallium nitride LEDs; and c) forming the matrix photodetector in and/or above the same semiconducting substrate, wherein step c) is implemented before or after steps a) and b). Previously presented
A method of fabricating a papillary print sensor according to claim 16, the light emitting device being composed of one single gallium nitride light emitting diode (LED) with a series of through opening therein, the method comprising: a) adding an active LED stack onto a face of the same semiconducting substrate, comprising at least first and second doped semiconducting layers with opposite types of conductivity; b) forming trenches in the active LED stack to pierce openings passing through the single gallium nitride LED; and c) forming the matrix photodetector in and/or above the same semiconducting substrate, wherein step c) is implemented before or after steps a) and b). Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of one single gallium nitride light emitting diode (LED) with a series of through openings therein. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of a plurality of gallium nitride light emitting diodes (LED). Previously presented
- 41. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
papillary print sensor
Materials described outside the worked examples.
gallium nitride LED
GaN
pyroelectric material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 9 illustrates a third embodiment derived from the embodiment in figure 6, in which the single conducting layer 980 is covered by a transparent electrical insulator 992 (for example SiO 2, or Si 3 N4, itself covered by a plurality of electrical resistances 993. Each of the electrical …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
LED surface area relative to photodetector surface area | — | GaN |
capture surface area of papillary print sensor | — | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,991,751Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 diagrammatically illustrates a sectional view of a first embodiment of a papillary print sensor 100 according to the invention. The print sensor 100 comprises a semiconducting substrate 110, for example made of silicon, comprising control circuits (not shown) preferably made from a CMOS …
Figures 2A to 2D illustrate different variant distributions of the GaN LEDs 140 and the photodiodes 130, shown in a top view. In each of these variants, the photodiodes 130 are set out in a square array (or matrix) with pitch P, in which P is for example equal to 50.8 p m, or 25.4 p m, or even less. …
Figures 3A and 3B illustrate two example embodiments of polychromatic light emitting devices. On figure 3A, the GaN LEDs are distributed in blocks of three LED, in a square distribution array. Each block comprises three directly adjacent GaN LEDs (1401, 1402, 1403), emitting in the red, blue and …
Figure 4 illustrates a particularly advantageous embodiment in which the light emitting device is interlaced with pyroelectric conversion elements. Only the differences between the print sensor 400 in figure 4 and the embodiment in figure 1 will be described. The print sensor 400 in figure 4 comprises …
Figure 6 illustrates a variant of a print sensor 600 according to the invention, in which the upper electrodes of the G aN LEDs and the upper electrodes of the pyroelectric conversion elements are formed together in a single piece-. One solution consists of replacing the plurality of upper …
Figures 7 and 8 diagrammatically illustrate the principle of an active type of thermal detection.
Figure 8 illustrates a current pulse provided to the heating element 702, defined by a constant current to between instants t 1 and t 2, and zero at other times. This current pulse activates heating of the pyroelectric conversion element by the heating element 702, between instants t 1 and t 2. When …
Figure 9 illustrates a third embodiment derived from the embodiment in figure 6, in which the single conducting layer 980 is covered by a transparent electrical insulator 992 (for example SiO 2, or Si 3 N4, itself covered by a plurality of electrical resistances 993. Each of the electrical …
Figures 10 and 11 illustrate two variants in which the matrix photodetector is composed of a PiN diode array. Only the differences between the print sensor 1000 and the print sensor in figure 1 will be described. In this case, the matrix photodetector is composed of PiN diodes 1030, each extending …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-15. Canceled
Canceled
A papillary print sensor, comprising: a light emitting device and a matrix photodetector interlaced together in a same semiconducting substrate and/or above a surface of the same semiconducting substrate, the light emitting device being oriented in and/or above the surface of the same semiconducting substrate such that the light emitting device is configured to emit light radiation towards a contact surface of the papillary print sensor along an axis orthogonal to the contact surface, the matrix photodetector being sensitive to at least part of an emission spectrum of the light emitting device, and being oriented in and/or above the surface of the same semiconducting substrate such that the matrix photodetector is configured to detect light radiation backscattered through the contact surface, wherein the light emitting device is composed of at least one gallium nitride light emitting diode (LED), wherein the matrix photodetector extends on a capture surface of the papillary print sensor, and wherein the li g ht emitting device occupies a surface area on the semiconducting substrate equal to at least ten times less than a surface area occupied by the matrix photodetector. Currently amended
The papillary print sensor according to claim 16, wherein the matrix photodetector extends along a capture surface of the sensor, in a first stage of the sensor, wherein the light emitting device extends in a second stage of the sensor, and wherein the second stage extends above the first stage, the second stage being superposed above the first stage along an axis orthogonal to a plane of the capture surface. Previously presented
The papillary print sensor according to claim 16, wherein the same semiconducting substrate includes control circuits comprising a plurality of metallic connection tracks, the at least one gallium nitride LED extending above a metallic track of the control circuits. Previously presented
The papillary print sensor according to claim 16, wherein the at least one gallium nitride LED is offset from photodetectors of the matrix photodetector in longitudinal and transverse directions along a plane of a capture surface of the sensor. Previously presented
The papillary print sensor according to claim 16, wherein a distance between an upper surface of an outermost layer of the sensor on a side opposite the same semiconducting substrate, and the matrix photodetector, is less than or equal to a distribution pitch of photodetectors of the matrix photodetector. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), distributed in a distribution array with N rows and M columns, in which N and M are integers greater than 3, or of several gallium nitride LEDs, each in the form of a strip, distributed in one column or two columns of strips parallel to each other. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), distributed in a distribution array with N rows and M columns, in which N and M are integers greater than 3, or of several gallium nitride LEDs, each in the form of a strip, distributed in one column or two columns of strips parallel to each other. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is polychromatic, the at least one gallium nitride LED comprising an active LED stack covered by at least one photoluminescent conversion stack. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), the sensor further comprising a pyroelectric material extending between the gallium nitride LEDs, the pyroelectric material also extending between at least one lower electrode on a side of the same semiconducting substrate, and at least one upper electrode on another side opposite the same semiconducting substrate, so as to form an array of pyroelectric conversion elements. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of one single gallium nitride light emitting diode (LED) with a series of through openings therein, the sensor further comprising a pyroelectric material extending in the through openings of the gallium nitride LED, the pyroelectric material also extending between at least one lower electrode on a side of the same semiconducting substrate, and at least one upper electrode on another side opposite the same semiconducting substrate, so as to form an array of pyroelectric conversion elements. Previously presented
A smart phone comprising image acquisition means and a flash, and further comprising a papillary print sensor according to claim 16, wherein the flash is composed of a plurality of gallium nitride light emitting diodes (LEDs) formed on the same semiconducting substrate of the papillary print sensor. Previously presented
A method of fabricating a papillary print sensor according to claim 16, the light emitting device being composed of several gallium nitride light emitting diodes (LEDs), the method comprising: a) adding an active LED stack onto a face of the same semiconducting substrate, comprising at least first and second doped semiconducting layers with opposite types of conductivity; b) forming trenches in the active LED stack to delimit the several gallium nitride LEDs; and c) forming the matrix photodetector in and/or above the same semiconducting substrate, wherein step c) is implemented before or after steps a) and b). Previously presented
A method of fabricating a papillary print sensor according to claim 16, the light emitting device being composed of one single gallium nitride light emitting diode (LED) with a series of through opening therein, the method comprising: a) adding an active LED stack onto a face of the same semiconducting substrate, comprising at least first and second doped semiconducting layers with opposite types of conductivity; b) forming trenches in the active LED stack to pierce openings passing through the single gallium nitride LED; and c) forming the matrix photodetector in and/or above the same semiconducting substrate, wherein step c) is implemented before or after steps a) and b). Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of one single gallium nitride light emitting diode (LED) with a series of through openings therein. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of a plurality of gallium nitride light emitting diodes (LED). Previously presented
- 41. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
papillary print sensor
Materials described outside the worked examples.
gallium nitride LED
GaN
pyroelectric material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 9 illustrates a third embodiment derived from the embodiment in figure 6, in which the single conducting layer 980 is covered by a transparent electrical insulator 992 (for example SiO 2, or Si 3 N4, itself covered by a plurality of electrical resistances 993. Each of the electrical …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
LED surface area relative to photodetector surface area | — | GaN |
capture surface area of papillary print sensor | — | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,991,751Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 diagrammatically illustrates a sectional view of a first embodiment of a papillary print sensor 100 according to the invention. The print sensor 100 comprises a semiconducting substrate 110, for example made of silicon, comprising control circuits (not shown) preferably made from a CMOS …
Figures 2A to 2D illustrate different variant distributions of the GaN LEDs 140 and the photodiodes 130, shown in a top view. In each of these variants, the photodiodes 130 are set out in a square array (or matrix) with pitch P, in which P is for example equal to 50.8 p m, or 25.4 p m, or even less. …
Figures 3A and 3B illustrate two example embodiments of polychromatic light emitting devices. On figure 3A, the GaN LEDs are distributed in blocks of three LED, in a square distribution array. Each block comprises three directly adjacent GaN LEDs (1401, 1402, 1403), emitting in the red, blue and …
Figure 4 illustrates a particularly advantageous embodiment in which the light emitting device is interlaced with pyroelectric conversion elements. Only the differences between the print sensor 400 in figure 4 and the embodiment in figure 1 will be described. The print sensor 400 in figure 4 comprises …
Figure 6 illustrates a variant of a print sensor 600 according to the invention, in which the upper electrodes of the G aN LEDs and the upper electrodes of the pyroelectric conversion elements are formed together in a single piece-. One solution consists of replacing the plurality of upper …
Figures 7 and 8 diagrammatically illustrate the principle of an active type of thermal detection.
Figure 8 illustrates a current pulse provided to the heating element 702, defined by a constant current to between instants t 1 and t 2, and zero at other times. This current pulse activates heating of the pyroelectric conversion element by the heating element 702, between instants t 1 and t 2. When …
Figure 9 illustrates a third embodiment derived from the embodiment in figure 6, in which the single conducting layer 980 is covered by a transparent electrical insulator 992 (for example SiO 2, or Si 3 N4, itself covered by a plurality of electrical resistances 993. Each of the electrical …
Figures 10 and 11 illustrate two variants in which the matrix photodetector is composed of a PiN diode array. Only the differences between the print sensor 1000 and the print sensor in figure 1 will be described. In this case, the matrix photodetector is composed of PiN diodes 1030, each extending …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-15. Canceled
Canceled
A papillary print sensor, comprising: a light emitting device and a matrix photodetector interlaced together in a same semiconducting substrate and/or above a surface of the same semiconducting substrate, the light emitting device being oriented in and/or above the surface of the same semiconducting substrate such that the light emitting device is configured to emit light radiation towards a contact surface of the papillary print sensor along an axis orthogonal to the contact surface, the matrix photodetector being sensitive to at least part of an emission spectrum of the light emitting device, and being oriented in and/or above the surface of the same semiconducting substrate such that the matrix photodetector is configured to detect light radiation backscattered through the contact surface, wherein the light emitting device is composed of at least one gallium nitride light emitting diode (LED), wherein the matrix photodetector extends on a capture surface of the papillary print sensor, and wherein the li g ht emitting device occupies a surface area on the semiconducting substrate equal to at least ten times less than a surface area occupied by the matrix photodetector. Currently amended
The papillary print sensor according to claim 16, wherein the matrix photodetector extends along a capture surface of the sensor, in a first stage of the sensor, wherein the light emitting device extends in a second stage of the sensor, and wherein the second stage extends above the first stage, the second stage being superposed above the first stage along an axis orthogonal to a plane of the capture surface. Previously presented
The papillary print sensor according to claim 16, wherein the same semiconducting substrate includes control circuits comprising a plurality of metallic connection tracks, the at least one gallium nitride LED extending above a metallic track of the control circuits. Previously presented
The papillary print sensor according to claim 16, wherein the at least one gallium nitride LED is offset from photodetectors of the matrix photodetector in longitudinal and transverse directions along a plane of a capture surface of the sensor. Previously presented
The papillary print sensor according to claim 16, wherein a distance between an upper surface of an outermost layer of the sensor on a side opposite the same semiconducting substrate, and the matrix photodetector, is less than or equal to a distribution pitch of photodetectors of the matrix photodetector. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), distributed in a distribution array with N rows and M columns, in which N and M are integers greater than 3, or of several gallium nitride LEDs, each in the form of a strip, distributed in one column or two columns of strips parallel to each other. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), distributed in a distribution array with N rows and M columns, in which N and M are integers greater than 3, or of several gallium nitride LEDs, each in the form of a strip, distributed in one column or two columns of strips parallel to each other. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is polychromatic, the at least one gallium nitride LED comprising an active LED stack covered by at least one photoluminescent conversion stack. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), the sensor further comprising a pyroelectric material extending between the gallium nitride LEDs, the pyroelectric material also extending between at least one lower electrode on a side of the same semiconducting substrate, and at least one upper electrode on another side opposite the same semiconducting substrate, so as to form an array of pyroelectric conversion elements. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of one single gallium nitride light emitting diode (LED) with a series of through openings therein, the sensor further comprising a pyroelectric material extending in the through openings of the gallium nitride LED, the pyroelectric material also extending between at least one lower electrode on a side of the same semiconducting substrate, and at least one upper electrode on another side opposite the same semiconducting substrate, so as to form an array of pyroelectric conversion elements. Previously presented
A smart phone comprising image acquisition means and a flash, and further comprising a papillary print sensor according to claim 16, wherein the flash is composed of a plurality of gallium nitride light emitting diodes (LEDs) formed on the same semiconducting substrate of the papillary print sensor. Previously presented
A method of fabricating a papillary print sensor according to claim 16, the light emitting device being composed of several gallium nitride light emitting diodes (LEDs), the method comprising: a) adding an active LED stack onto a face of the same semiconducting substrate, comprising at least first and second doped semiconducting layers with opposite types of conductivity; b) forming trenches in the active LED stack to delimit the several gallium nitride LEDs; and c) forming the matrix photodetector in and/or above the same semiconducting substrate, wherein step c) is implemented before or after steps a) and b). Previously presented
A method of fabricating a papillary print sensor according to claim 16, the light emitting device being composed of one single gallium nitride light emitting diode (LED) with a series of through opening therein, the method comprising: a) adding an active LED stack onto a face of the same semiconducting substrate, comprising at least first and second doped semiconducting layers with opposite types of conductivity; b) forming trenches in the active LED stack to pierce openings passing through the single gallium nitride LED; and c) forming the matrix photodetector in and/or above the same semiconducting substrate, wherein step c) is implemented before or after steps a) and b). Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of one single gallium nitride light emitting diode (LED) with a series of through openings therein. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of a plurality of gallium nitride light emitting diodes (LED). Previously presented
- 41. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
papillary print sensor
Materials described outside the worked examples.
gallium nitride LED
GaN
pyroelectric material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 9 illustrates a third embodiment derived from the embodiment in figure 6, in which the single conducting layer 980 is covered by a transparent electrical insulator 992 (for example SiO 2, or Si 3 N4, itself covered by a plurality of electrical resistances 993. Each of the electrical …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
LED surface area relative to photodetector surface area | — | GaN |
capture surface area of papillary print sensor | — | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,991,751Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 diagrammatically illustrates a sectional view of a first embodiment of a papillary print sensor 100 according to the invention. The print sensor 100 comprises a semiconducting substrate 110, for example made of silicon, comprising control circuits (not shown) preferably made from a CMOS …
Figures 2A to 2D illustrate different variant distributions of the GaN LEDs 140 and the photodiodes 130, shown in a top view. In each of these variants, the photodiodes 130 are set out in a square array (or matrix) with pitch P, in which P is for example equal to 50.8 p m, or 25.4 p m, or even less. …
Figures 3A and 3B illustrate two example embodiments of polychromatic light emitting devices. On figure 3A, the GaN LEDs are distributed in blocks of three LED, in a square distribution array. Each block comprises three directly adjacent GaN LEDs (1401, 1402, 1403), emitting in the red, blue and …
Figure 4 illustrates a particularly advantageous embodiment in which the light emitting device is interlaced with pyroelectric conversion elements. Only the differences between the print sensor 400 in figure 4 and the embodiment in figure 1 will be described. The print sensor 400 in figure 4 comprises …
Figure 6 illustrates a variant of a print sensor 600 according to the invention, in which the upper electrodes of the G aN LEDs and the upper electrodes of the pyroelectric conversion elements are formed together in a single piece-. One solution consists of replacing the plurality of upper …
Figures 7 and 8 diagrammatically illustrate the principle of an active type of thermal detection.
Figure 8 illustrates a current pulse provided to the heating element 702, defined by a constant current to between instants t 1 and t 2, and zero at other times. This current pulse activates heating of the pyroelectric conversion element by the heating element 702, between instants t 1 and t 2. When …
Figure 9 illustrates a third embodiment derived from the embodiment in figure 6, in which the single conducting layer 980 is covered by a transparent electrical insulator 992 (for example SiO 2, or Si 3 N4, itself covered by a plurality of electrical resistances 993. Each of the electrical …
Figures 10 and 11 illustrate two variants in which the matrix photodetector is composed of a PiN diode array. Only the differences between the print sensor 1000 and the print sensor in figure 1 will be described. In this case, the matrix photodetector is composed of PiN diodes 1030, each extending …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
-15. Canceled
Canceled
A papillary print sensor, comprising: a light emitting device and a matrix photodetector interlaced together in a same semiconducting substrate and/or above a surface of the same semiconducting substrate, the light emitting device being oriented in and/or above the surface of the same semiconducting substrate such that the light emitting device is configured to emit light radiation towards a contact surface of the papillary print sensor along an axis orthogonal to the contact surface, the matrix photodetector being sensitive to at least part of an emission spectrum of the light emitting device, and being oriented in and/or above the surface of the same semiconducting substrate such that the matrix photodetector is configured to detect light radiation backscattered through the contact surface, wherein the light emitting device is composed of at least one gallium nitride light emitting diode (LED), wherein the matrix photodetector extends on a capture surface of the papillary print sensor, and wherein the li g ht emitting device occupies a surface area on the semiconducting substrate equal to at least ten times less than a surface area occupied by the matrix photodetector. Currently amended
The papillary print sensor according to claim 16, wherein the matrix photodetector extends along a capture surface of the sensor, in a first stage of the sensor, wherein the light emitting device extends in a second stage of the sensor, and wherein the second stage extends above the first stage, the second stage being superposed above the first stage along an axis orthogonal to a plane of the capture surface. Previously presented
The papillary print sensor according to claim 16, wherein the same semiconducting substrate includes control circuits comprising a plurality of metallic connection tracks, the at least one gallium nitride LED extending above a metallic track of the control circuits. Previously presented
The papillary print sensor according to claim 16, wherein the at least one gallium nitride LED is offset from photodetectors of the matrix photodetector in longitudinal and transverse directions along a plane of a capture surface of the sensor. Previously presented
The papillary print sensor according to claim 16, wherein a distance between an upper surface of an outermost layer of the sensor on a side opposite the same semiconducting substrate, and the matrix photodetector, is less than or equal to a distribution pitch of photodetectors of the matrix photodetector. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), distributed in a distribution array with N rows and M columns, in which N and M are integers greater than 3, or of several gallium nitride LEDs, each in the form of a strip, distributed in one column or two columns of strips parallel to each other. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), distributed in a distribution array with N rows and M columns, in which N and M are integers greater than 3, or of several gallium nitride LEDs, each in the form of a strip, distributed in one column or two columns of strips parallel to each other. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is polychromatic, the at least one gallium nitride LED comprising an active LED stack covered by at least one photoluminescent conversion stack. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of several gallium nitride light emitting diodes (LEDs), the sensor further comprising a pyroelectric material extending between the gallium nitride LEDs, the pyroelectric material also extending between at least one lower electrode on a side of the same semiconducting substrate, and at least one upper electrode on another side opposite the same semiconducting substrate, so as to form an array of pyroelectric conversion elements. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of one single gallium nitride light emitting diode (LED) with a series of through openings therein, the sensor further comprising a pyroelectric material extending in the through openings of the gallium nitride LED, the pyroelectric material also extending between at least one lower electrode on a side of the same semiconducting substrate, and at least one upper electrode on another side opposite the same semiconducting substrate, so as to form an array of pyroelectric conversion elements. Previously presented
A smart phone comprising image acquisition means and a flash, and further comprising a papillary print sensor according to claim 16, wherein the flash is composed of a plurality of gallium nitride light emitting diodes (LEDs) formed on the same semiconducting substrate of the papillary print sensor. Previously presented
A method of fabricating a papillary print sensor according to claim 16, the light emitting device being composed of several gallium nitride light emitting diodes (LEDs), the method comprising: a) adding an active LED stack onto a face of the same semiconducting substrate, comprising at least first and second doped semiconducting layers with opposite types of conductivity; b) forming trenches in the active LED stack to delimit the several gallium nitride LEDs; and c) forming the matrix photodetector in and/or above the same semiconducting substrate, wherein step c) is implemented before or after steps a) and b). Previously presented
A method of fabricating a papillary print sensor according to claim 16, the light emitting device being composed of one single gallium nitride light emitting diode (LED) with a series of through opening therein, the method comprising: a) adding an active LED stack onto a face of the same semiconducting substrate, comprising at least first and second doped semiconducting layers with opposite types of conductivity; b) forming trenches in the active LED stack to pierce openings passing through the single gallium nitride LED; and c) forming the matrix photodetector in and/or above the same semiconducting substrate, wherein step c) is implemented before or after steps a) and b). Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of one single gallium nitride light emitting diode (LED) with a series of through openings therein. Previously presented
The papillary print sensor according to claim 16, wherein the light emitting device is composed of a plurality of gallium nitride light emitting diodes (LED). Previously presented
- 41. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
papillary print sensor
Materials described outside the worked examples.
gallium nitride LED
GaN
pyroelectric material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 9 illustrates a third embodiment derived from the embodiment in figure 6, in which the single conducting layer 980 is covered by a transparent electrical insulator 992 (for example SiO 2, or Si 3 N4, itself covered by a plurality of electrical resistances 993. Each of the electrical …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
LED surface area relative to photodetector surface area | — | GaN |
capture surface area of papillary print sensor | — | — |
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