Patent
US 10,418,495GALLIUM NITRIDE-BASED SENSOR HAVING HEATER STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Kyungho Park
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 10,418,495Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 C illustrate changes in sensitivity of a hydrogen sensor depending on the temperature;
FIG. 2 illustrates the epitaxial thin film growth for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the …
FIG. 3 illustrates the MESA isolation on the epitaxial thin film for manufacturing a gallium nitride- based sensor having a heater structure according to an …
FIG. 4 illustrates the patterning for forming an electrode on the epitaxial thin film for manufacturing a gallium nitride-based sensor having a heater structure …
FIG. 5 illustrates the electrode formation and the HEMT formation for manufacturing a gallium nitride-based sensor having a heater structure according to an …
FIG. 6 illustrates the electrode formation and the Schottky diode formation for manufacturing a gallium nitride- based sensor having a heater structure …
FIG. 7 illustrates the electrode formation and the membrane formation for manufacturing a gallium nitride-based sensor having a heater structure according to …
FIG. 8 illustrates the manufacture of a gallium nitride-based sensor having a heater structure according to another embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a gallium nitride-based sensor having a heater structure, comprising: growing an n-type or p-type G aN layer on a substrate; growing a barrier layer on the n-type or p-type GaN layer; sequentially growing a u- G aN layer and a layer selected from the group consisting of an Al XGa l -X N layer, an In XAl l >XN layer and an In XAlyGa l -X-y N layer on the barrier layer; patterning the n-type or p-type G aN layer so as to form an electrode; forming the electrode along a pattern formed on the n- type or p-type G aN layer; and forming a sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l mXN layer and the In XAlyGa l -X-y N layer.
The method of claim 1, wherein the n-type or p-type G aN layer functions as a heater for generating heat due to current applied to the electrode.
The method of claim 1, wherein the barrier layer is formed in any one layer or a combination of layers selected from among an Al XGa l -X N layer, an In XAl l1 X N layer and a high- resistance GaN layer.
The method of claim 1, wherein the forming the sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the InXAlyGai- X -y N layer comprises: forming a source electrode and a drain electrode on the layer selected from the group consisting of the Al XGa l -XN layer, the In XAl l1 X N layer and the In XAlyGa l -X-y N layer, and forming the sensing material layer on a portion of a region between the source electrode and the drain electrode.
The method of claim 1, wherein a GaN cap layer, an oxide film layer or a nitride film layer, having a thickness of 30 nm or less, is further formed in a single layer or multiple layers on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the In XAlyGa l -X-y N layer.
The method of claim 1, wherein the forming the sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the In XAlyGa l-X-y N layer comprises: forming an ohmic contact electrode on the layer selected from the group consisting of the Al XGa l -X N layer, the InXAl l1 X N layer and the In XAlyGa l -X-y N layer, and forming the sensing material layer for Schottky contact formation and an ohmic contact electrode connected thereto.
The method of claim 1, wherein in the Al XGa l -X N layer, x satisfies O<x<1, and in the In XAl l1 X N layer, x satisfies 0<x-1.
The method of claim 1, wherein in the In XAlyGa l -X-yN SVG 16130721.09-13-2018.JM₁₃O₁₄₀RXEAPX2.CLM.1.svg 0.14 4.22 Black and white
The method of claim 1, further comprising separating the substrate from the n-type or p-type GaN layer.
The method of claim 1, wherein the substrate is made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, Si and GaN.
The method of claim 1, wherein the n-type or p-type GaN layer formed on the substrate is provided in a stripe shape, and a thickness, a width, a gap and electrical conductivity of the stripe shape are adjusted to thereby facilitate control of a reaction time (sensitivity) of the sensing material layer and a restoration time.
A gallium nitride-based sensor having a heater structure, comprising: a substrate; an n-type or p-type GaN layer grown on the substrate; a barrier layer grown on the n-type or p-type GaN layer; a u-GaN layer grown on the barrier layer; a layer selected from the group consisting of an Al XGa l _ X N layer, an In XAl l1 X N layer and an In XAlyGa l -X-y N layer grown on the u-GaN layer; an electrode formed along a pattern formed on the n- type or p-type GaN layer; and a sensing material layer formed on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 XN layer and the In XAlyGa l -X-y N layer.
The gallium nitride-based sensor of claim 14, wherein the n-type or p-type GaN layer functions as a heater for generating heat due to current applied to the electrode.
The gallium nitride-based sensor of claim 14, wherein the barrier layer is formed in any one layer or a combination of layers selected from among an Al XGa l -X N layer, an In XAl l X N layer and a high-resistance GaN layer.
The gallium nitride-based sensor of claim 14, further comprising a source electrode and a drain electrode formed on the layer selected from the group consisting of the AlXGa l X N layer, the In XAl l X N layer and the In XAlyGa l Xy N layer, the sensing material layer being formed on a portion of a region between the source electrode and the drain electrode.
The gallium nitride-based sensor of claim 14, further comprising a GaN cap layer, an oxide film layer or a nitride film layer, configured to have a thickness of 30 nm or less and formed in a single layer or multiple layers on the layer selected from the group consisting of the Al XGa l -XN layer, the In XAl 1 X N layer and the In XAlyGa l -X-y N layer.
The gallium nitride-based sensor of claim 14, further comprising: an ohmic contact electrode formed on the layer selected from the group consisting of the A lXGa l -X N layer, the In XAlXN layer and the In XAlyGa l -X-y N layer; and an ohmic contact electrode connected to the sensing material layer for Schottky contact formation.
The gallium nitride-based sensor of claim 14, wherein in the Al XGa l X N layer, x satisfies 0<x<1, and in the InXAlX N layer, x satisfies 0<x 1.
The gallium nitride-based sensor of claim 14, wherein in the In XAlyGaXy N layer, x and y satisfy 0<x<1, 0<y S 1, and 0<(x+y) <1.
The gallium nitride-based sensor of claim 14, wherein heat generated by applying current to the n-type or p-type GaN layer is transferred to the sensing material layer.
The gallium nitride-based sensor of claim 14, wherein the substrate is made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, Si and G aN.
The gallium nitride-based sensor of claim 14, wherein the n-type or p-type Ga N layer formed on the substrate is provided in a stripe shape, and a thickness, a width, a gap and electrical conductivity of the stripe shape are adjusted to thereby facilitate control of a reaction time (sensitivity) of the sensing material layer and a restoration time.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based HEMT sensor having heater structure
Materials described outside the worked examples.
n-type or p-type GaN layer
GaN
AlXGa₁-XN layer
AlXGa₁-XN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,418,495Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 C illustrate changes in sensitivity of a hydrogen sensor depending on the temperature;
FIG. 2 illustrates the epitaxial thin film growth for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the …
FIG. 3 illustrates the MESA isolation on the epitaxial thin film for manufacturing a gallium nitride- based sensor having a heater structure according to an …
FIG. 4 illustrates the patterning for forming an electrode on the epitaxial thin film for manufacturing a gallium nitride-based sensor having a heater structure …
FIG. 5 illustrates the electrode formation and the HEMT formation for manufacturing a gallium nitride-based sensor having a heater structure according to an …
FIG. 6 illustrates the electrode formation and the Schottky diode formation for manufacturing a gallium nitride- based sensor having a heater structure …
FIG. 7 illustrates the electrode formation and the membrane formation for manufacturing a gallium nitride-based sensor having a heater structure according to …
FIG. 8 illustrates the manufacture of a gallium nitride-based sensor having a heater structure according to another embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a gallium nitride-based sensor having a heater structure, comprising: growing an n-type or p-type G aN layer on a substrate; growing a barrier layer on the n-type or p-type GaN layer; sequentially growing a u- G aN layer and a layer selected from the group consisting of an Al XGa l -X N layer, an In XAl l >XN layer and an In XAlyGa l -X-y N layer on the barrier layer; patterning the n-type or p-type G aN layer so as to form an electrode; forming the electrode along a pattern formed on the n- type or p-type G aN layer; and forming a sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l mXN layer and the In XAlyGa l -X-y N layer.
The method of claim 1, wherein the n-type or p-type G aN layer functions as a heater for generating heat due to current applied to the electrode.
The method of claim 1, wherein the barrier layer is formed in any one layer or a combination of layers selected from among an Al XGa l -X N layer, an In XAl l1 X N layer and a high- resistance GaN layer.
The method of claim 1, wherein the forming the sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the InXAlyGai- X -y N layer comprises: forming a source electrode and a drain electrode on the layer selected from the group consisting of the Al XGa l -XN layer, the In XAl l1 X N layer and the In XAlyGa l -X-y N layer, and forming the sensing material layer on a portion of a region between the source electrode and the drain electrode.
The method of claim 1, wherein a GaN cap layer, an oxide film layer or a nitride film layer, having a thickness of 30 nm or less, is further formed in a single layer or multiple layers on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the In XAlyGa l -X-y N layer.
The method of claim 1, wherein the forming the sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the In XAlyGa l-X-y N layer comprises: forming an ohmic contact electrode on the layer selected from the group consisting of the Al XGa l -X N layer, the InXAl l1 X N layer and the In XAlyGa l -X-y N layer, and forming the sensing material layer for Schottky contact formation and an ohmic contact electrode connected thereto.
The method of claim 1, wherein in the Al XGa l -X N layer, x satisfies O<x<1, and in the In XAl l1 X N layer, x satisfies 0<x-1.
The method of claim 1, wherein in the In XAlyGa l -X-yN SVG 16130721.09-13-2018.JM₁₃O₁₄₀RXEAPX2.CLM.1.svg 0.14 4.22 Black and white
The method of claim 1, further comprising separating the substrate from the n-type or p-type GaN layer.
The method of claim 1, wherein the substrate is made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, Si and GaN.
The method of claim 1, wherein the n-type or p-type GaN layer formed on the substrate is provided in a stripe shape, and a thickness, a width, a gap and electrical conductivity of the stripe shape are adjusted to thereby facilitate control of a reaction time (sensitivity) of the sensing material layer and a restoration time.
A gallium nitride-based sensor having a heater structure, comprising: a substrate; an n-type or p-type GaN layer grown on the substrate; a barrier layer grown on the n-type or p-type GaN layer; a u-GaN layer grown on the barrier layer; a layer selected from the group consisting of an Al XGa l _ X N layer, an In XAl l1 X N layer and an In XAlyGa l -X-y N layer grown on the u-GaN layer; an electrode formed along a pattern formed on the n- type or p-type GaN layer; and a sensing material layer formed on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 XN layer and the In XAlyGa l -X-y N layer.
The gallium nitride-based sensor of claim 14, wherein the n-type or p-type GaN layer functions as a heater for generating heat due to current applied to the electrode.
The gallium nitride-based sensor of claim 14, wherein the barrier layer is formed in any one layer or a combination of layers selected from among an Al XGa l -X N layer, an In XAl l X N layer and a high-resistance GaN layer.
The gallium nitride-based sensor of claim 14, further comprising a source electrode and a drain electrode formed on the layer selected from the group consisting of the AlXGa l X N layer, the In XAl l X N layer and the In XAlyGa l Xy N layer, the sensing material layer being formed on a portion of a region between the source electrode and the drain electrode.
The gallium nitride-based sensor of claim 14, further comprising a GaN cap layer, an oxide film layer or a nitride film layer, configured to have a thickness of 30 nm or less and formed in a single layer or multiple layers on the layer selected from the group consisting of the Al XGa l -XN layer, the In XAl 1 X N layer and the In XAlyGa l -X-y N layer.
The gallium nitride-based sensor of claim 14, further comprising: an ohmic contact electrode formed on the layer selected from the group consisting of the A lXGa l -X N layer, the In XAlXN layer and the In XAlyGa l -X-y N layer; and an ohmic contact electrode connected to the sensing material layer for Schottky contact formation.
The gallium nitride-based sensor of claim 14, wherein in the Al XGa l X N layer, x satisfies 0<x<1, and in the InXAlX N layer, x satisfies 0<x 1.
The gallium nitride-based sensor of claim 14, wherein in the In XAlyGaXy N layer, x and y satisfy 0<x<1, 0<y S 1, and 0<(x+y) <1.
The gallium nitride-based sensor of claim 14, wherein heat generated by applying current to the n-type or p-type GaN layer is transferred to the sensing material layer.
The gallium nitride-based sensor of claim 14, wherein the substrate is made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, Si and G aN.
The gallium nitride-based sensor of claim 14, wherein the n-type or p-type Ga N layer formed on the substrate is provided in a stripe shape, and a thickness, a width, a gap and electrical conductivity of the stripe shape are adjusted to thereby facilitate control of a reaction time (sensitivity) of the sensing material layer and a restoration time.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based HEMT sensor having heater structure
Materials described outside the worked examples.
n-type or p-type GaN layer
GaN
AlXGa₁-XN layer
AlXGa₁-XN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,418,495Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 C illustrate changes in sensitivity of a hydrogen sensor depending on the temperature;
FIG. 2 illustrates the epitaxial thin film growth for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the …
FIG. 3 illustrates the MESA isolation on the epitaxial thin film for manufacturing a gallium nitride- based sensor having a heater structure according to an …
FIG. 4 illustrates the patterning for forming an electrode on the epitaxial thin film for manufacturing a gallium nitride-based sensor having a heater structure …
FIG. 5 illustrates the electrode formation and the HEMT formation for manufacturing a gallium nitride-based sensor having a heater structure according to an …
FIG. 6 illustrates the electrode formation and the Schottky diode formation for manufacturing a gallium nitride- based sensor having a heater structure …
FIG. 7 illustrates the electrode formation and the membrane formation for manufacturing a gallium nitride-based sensor having a heater structure according to …
FIG. 8 illustrates the manufacture of a gallium nitride-based sensor having a heater structure according to another embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a gallium nitride-based sensor having a heater structure, comprising: growing an n-type or p-type G aN layer on a substrate; growing a barrier layer on the n-type or p-type GaN layer; sequentially growing a u- G aN layer and a layer selected from the group consisting of an Al XGa l -X N layer, an In XAl l >XN layer and an In XAlyGa l -X-y N layer on the barrier layer; patterning the n-type or p-type G aN layer so as to form an electrode; forming the electrode along a pattern formed on the n- type or p-type G aN layer; and forming a sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l mXN layer and the In XAlyGa l -X-y N layer.
The method of claim 1, wherein the n-type or p-type G aN layer functions as a heater for generating heat due to current applied to the electrode.
The method of claim 1, wherein the barrier layer is formed in any one layer or a combination of layers selected from among an Al XGa l -X N layer, an In XAl l1 X N layer and a high- resistance GaN layer.
The method of claim 1, wherein the forming the sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the InXAlyGai- X -y N layer comprises: forming a source electrode and a drain electrode on the layer selected from the group consisting of the Al XGa l -XN layer, the In XAl l1 X N layer and the In XAlyGa l -X-y N layer, and forming the sensing material layer on a portion of a region between the source electrode and the drain electrode.
The method of claim 1, wherein a GaN cap layer, an oxide film layer or a nitride film layer, having a thickness of 30 nm or less, is further formed in a single layer or multiple layers on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the In XAlyGa l -X-y N layer.
The method of claim 1, wherein the forming the sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the In XAlyGa l-X-y N layer comprises: forming an ohmic contact electrode on the layer selected from the group consisting of the Al XGa l -X N layer, the InXAl l1 X N layer and the In XAlyGa l -X-y N layer, and forming the sensing material layer for Schottky contact formation and an ohmic contact electrode connected thereto.
The method of claim 1, wherein in the Al XGa l -X N layer, x satisfies O<x<1, and in the In XAl l1 X N layer, x satisfies 0<x-1.
The method of claim 1, wherein in the In XAlyGa l -X-yN SVG 16130721.09-13-2018.JM₁₃O₁₄₀RXEAPX2.CLM.1.svg 0.14 4.22 Black and white
The method of claim 1, further comprising separating the substrate from the n-type or p-type GaN layer.
The method of claim 1, wherein the substrate is made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, Si and GaN.
The method of claim 1, wherein the n-type or p-type GaN layer formed on the substrate is provided in a stripe shape, and a thickness, a width, a gap and electrical conductivity of the stripe shape are adjusted to thereby facilitate control of a reaction time (sensitivity) of the sensing material layer and a restoration time.
A gallium nitride-based sensor having a heater structure, comprising: a substrate; an n-type or p-type GaN layer grown on the substrate; a barrier layer grown on the n-type or p-type GaN layer; a u-GaN layer grown on the barrier layer; a layer selected from the group consisting of an Al XGa l _ X N layer, an In XAl l1 X N layer and an In XAlyGa l -X-y N layer grown on the u-GaN layer; an electrode formed along a pattern formed on the n- type or p-type GaN layer; and a sensing material layer formed on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 XN layer and the In XAlyGa l -X-y N layer.
The gallium nitride-based sensor of claim 14, wherein the n-type or p-type GaN layer functions as a heater for generating heat due to current applied to the electrode.
The gallium nitride-based sensor of claim 14, wherein the barrier layer is formed in any one layer or a combination of layers selected from among an Al XGa l -X N layer, an In XAl l X N layer and a high-resistance GaN layer.
The gallium nitride-based sensor of claim 14, further comprising a source electrode and a drain electrode formed on the layer selected from the group consisting of the AlXGa l X N layer, the In XAl l X N layer and the In XAlyGa l Xy N layer, the sensing material layer being formed on a portion of a region between the source electrode and the drain electrode.
The gallium nitride-based sensor of claim 14, further comprising a GaN cap layer, an oxide film layer or a nitride film layer, configured to have a thickness of 30 nm or less and formed in a single layer or multiple layers on the layer selected from the group consisting of the Al XGa l -XN layer, the In XAl 1 X N layer and the In XAlyGa l -X-y N layer.
The gallium nitride-based sensor of claim 14, further comprising: an ohmic contact electrode formed on the layer selected from the group consisting of the A lXGa l -X N layer, the In XAlXN layer and the In XAlyGa l -X-y N layer; and an ohmic contact electrode connected to the sensing material layer for Schottky contact formation.
The gallium nitride-based sensor of claim 14, wherein in the Al XGa l X N layer, x satisfies 0<x<1, and in the InXAlX N layer, x satisfies 0<x 1.
The gallium nitride-based sensor of claim 14, wherein in the In XAlyGaXy N layer, x and y satisfy 0<x<1, 0<y S 1, and 0<(x+y) <1.
The gallium nitride-based sensor of claim 14, wherein heat generated by applying current to the n-type or p-type GaN layer is transferred to the sensing material layer.
The gallium nitride-based sensor of claim 14, wherein the substrate is made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, Si and G aN.
The gallium nitride-based sensor of claim 14, wherein the n-type or p-type Ga N layer formed on the substrate is provided in a stripe shape, and a thickness, a width, a gap and electrical conductivity of the stripe shape are adjusted to thereby facilitate control of a reaction time (sensitivity) of the sensing material layer and a restoration time.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based HEMT sensor having heater structure
Materials described outside the worked examples.
n-type or p-type GaN layer
GaN
AlXGa₁-XN layer
AlXGa₁-XN
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,418,495Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 C illustrate changes in sensitivity of a hydrogen sensor depending on the temperature;
FIG. 2 illustrates the epitaxial thin film growth for manufacturing a gallium nitride-based sensor having a heater structure according to an embodiment of the …
FIG. 3 illustrates the MESA isolation on the epitaxial thin film for manufacturing a gallium nitride- based sensor having a heater structure according to an …
FIG. 4 illustrates the patterning for forming an electrode on the epitaxial thin film for manufacturing a gallium nitride-based sensor having a heater structure …
FIG. 5 illustrates the electrode formation and the HEMT formation for manufacturing a gallium nitride-based sensor having a heater structure according to an …
FIG. 6 illustrates the electrode formation and the Schottky diode formation for manufacturing a gallium nitride- based sensor having a heater structure …
FIG. 7 illustrates the electrode formation and the membrane formation for manufacturing a gallium nitride-based sensor having a heater structure according to …
FIG. 8 illustrates the manufacture of a gallium nitride-based sensor having a heater structure according to another embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a gallium nitride-based sensor having a heater structure, comprising: growing an n-type or p-type G aN layer on a substrate; growing a barrier layer on the n-type or p-type GaN layer; sequentially growing a u- G aN layer and a layer selected from the group consisting of an Al XGa l -X N layer, an In XAl l >XN layer and an In XAlyGa l -X-y N layer on the barrier layer; patterning the n-type or p-type G aN layer so as to form an electrode; forming the electrode along a pattern formed on the n- type or p-type G aN layer; and forming a sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l mXN layer and the In XAlyGa l -X-y N layer.
The method of claim 1, wherein the n-type or p-type G aN layer functions as a heater for generating heat due to current applied to the electrode.
The method of claim 1, wherein the barrier layer is formed in any one layer or a combination of layers selected from among an Al XGa l -X N layer, an In XAl l1 X N layer and a high- resistance GaN layer.
The method of claim 1, wherein the forming the sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the InXAlyGai- X -y N layer comprises: forming a source electrode and a drain electrode on the layer selected from the group consisting of the Al XGa l -XN layer, the In XAl l1 X N layer and the In XAlyGa l -X-y N layer, and forming the sensing material layer on a portion of a region between the source electrode and the drain electrode.
The method of claim 1, wherein a GaN cap layer, an oxide film layer or a nitride film layer, having a thickness of 30 nm or less, is further formed in a single layer or multiple layers on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the In XAlyGa l -X-y N layer.
The method of claim 1, wherein the forming the sensing material layer on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 X N layer and the In XAlyGa l-X-y N layer comprises: forming an ohmic contact electrode on the layer selected from the group consisting of the Al XGa l -X N layer, the InXAl l1 X N layer and the In XAlyGa l -X-y N layer, and forming the sensing material layer for Schottky contact formation and an ohmic contact electrode connected thereto.
The method of claim 1, wherein in the Al XGa l -X N layer, x satisfies O<x<1, and in the In XAl l1 X N layer, x satisfies 0<x-1.
The method of claim 1, wherein in the In XAlyGa l -X-yN SVG 16130721.09-13-2018.JM₁₃O₁₄₀RXEAPX2.CLM.1.svg 0.14 4.22 Black and white
The method of claim 1, further comprising separating the substrate from the n-type or p-type GaN layer.
The method of claim 1, wherein the substrate is made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, Si and GaN.
The method of claim 1, wherein the n-type or p-type GaN layer formed on the substrate is provided in a stripe shape, and a thickness, a width, a gap and electrical conductivity of the stripe shape are adjusted to thereby facilitate control of a reaction time (sensitivity) of the sensing material layer and a restoration time.
A gallium nitride-based sensor having a heater structure, comprising: a substrate; an n-type or p-type GaN layer grown on the substrate; a barrier layer grown on the n-type or p-type GaN layer; a u-GaN layer grown on the barrier layer; a layer selected from the group consisting of an Al XGa l _ X N layer, an In XAl l1 X N layer and an In XAlyGa l -X-y N layer grown on the u-GaN layer; an electrode formed along a pattern formed on the n- type or p-type GaN layer; and a sensing material layer formed on the layer selected from the group consisting of the Al XGa l -X N layer, the In XAl l1 XN layer and the In XAlyGa l -X-y N layer.
The gallium nitride-based sensor of claim 14, wherein the n-type or p-type GaN layer functions as a heater for generating heat due to current applied to the electrode.
The gallium nitride-based sensor of claim 14, wherein the barrier layer is formed in any one layer or a combination of layers selected from among an Al XGa l -X N layer, an In XAl l X N layer and a high-resistance GaN layer.
The gallium nitride-based sensor of claim 14, further comprising a source electrode and a drain electrode formed on the layer selected from the group consisting of the AlXGa l X N layer, the In XAl l X N layer and the In XAlyGa l Xy N layer, the sensing material layer being formed on a portion of a region between the source electrode and the drain electrode.
The gallium nitride-based sensor of claim 14, further comprising a GaN cap layer, an oxide film layer or a nitride film layer, configured to have a thickness of 30 nm or less and formed in a single layer or multiple layers on the layer selected from the group consisting of the Al XGa l -XN layer, the In XAl 1 X N layer and the In XAlyGa l -X-y N layer.
The gallium nitride-based sensor of claim 14, further comprising: an ohmic contact electrode formed on the layer selected from the group consisting of the A lXGa l -X N layer, the In XAlXN layer and the In XAlyGa l -X-y N layer; and an ohmic contact electrode connected to the sensing material layer for Schottky contact formation.
The gallium nitride-based sensor of claim 14, wherein in the Al XGa l X N layer, x satisfies 0<x<1, and in the InXAlX N layer, x satisfies 0<x 1.
The gallium nitride-based sensor of claim 14, wherein in the In XAlyGaXy N layer, x and y satisfy 0<x<1, 0<y S 1, and 0<(x+y) <1.
The gallium nitride-based sensor of claim 14, wherein heat generated by applying current to the n-type or p-type GaN layer is transferred to the sensing material layer.
The gallium nitride-based sensor of claim 14, wherein the substrate is made of any one material selected from the group consisting of sapphire, AlN, diamond, BN, SiC, Si and G aN.
The gallium nitride-based sensor of claim 14, wherein the n-type or p-type Ga N layer formed on the substrate is provided in a stripe shape, and a thickness, a width, a gap and electrical conductivity of the stripe shape are adjusted to thereby facilitate control of a reaction time (sensitivity) of the sensing material layer and a restoration time.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based HEMT sensor having heater structure
Materials described outside the worked examples.
n-type or p-type GaN layer
GaN
AlXGa₁-XN layer
AlXGa₁-XN
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