Patent
US 9,691,853ELECTRONIC DEVICE INCLUDING GRAPHENE AND QUANTUM DOTS
Jinseong HEO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,691,853Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an electronic device according to example embodiments; [44]
FIGS. 2A through 2 C are schematic cross-sectional views of an electronic device according to example embodiments; [45]
FIG. 3 is a schematic cross-sectional view of an electronic device array including a plurality of the electronic devices shown in
FIGS. 4A through 4D are schematic cross-sectional views illustrating processes of manufacturing the electronic device of
FIG. 5 is a schematic cross-sectional view of an electronic device according to example embodiments; [48]
FIG. 6 is a schematic cross-sectional view of an electronic device according to example embodiments; [49]
FIGS. 7A through 7 C are schematic cross-sectional views of various electronic devices according to example embodiments; 8 Atty. Dkt. No. 2557S I -002233-US …
FIGS. 8A and 8B are schematic cross-sectional views illustrating processes of forming a quantum dot layer in the electronic device of
FIGS. 9A and 9B are schematic cross-sectional views illustrating processes of forming a quantum dot layer in the electronic device of
FIG. 10 is a schematic cross-sectional view of an electronic device according to example embodiments; [53]
FIG. 11 is a schematic cross-sectional view of an electronic device according to example embodiments; [54]
FIG. 12 is a schematic cross-sectional view of an electronic device according to example embodiments; [55]
FIG. 13 is a schematic cross-sectional view of an electronic device according to example embodiments; [56]
FIG. 14 is an equivalent circuit diagram of the electronic device of
FIGS. 15A through 15D are schematic cross-sectional views illustrating processes of manufacturing the electronic device of
FIGS. 16A and 16B are schematic cross-sectional views of electronic devices according to example embodiments
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device comprising: a channel layer including a graphene layer electrically contacting a quantum dot layer, the quantum dot layer including a plurality of quantum dots; a first electrode and a second electrode electrically connected to the channel layer, respectively, the first electrode being a source electrode or a drain electrode, the first electrode being arranged so the quantum dot layer is between the graphene layer and a surface of the first electrode that faces the graphene layer; a gate electrode configured to control an electric current between the first electrode and the second electrode via the channel layer; and a gate insulating layer over the gate electrode and under the channel layer, wherein the quantum dot layer is on only a partial region of the graphene layer, the first electrode contacts the quantum dot layer, and the second electrode directly contacts the graphene layer.
The electronic device of claim 1, wherein the quantum dot layer includes a plurality of first quantum dots and a plurality of second quantum dots that are different from the plurality of first quantum dots.
The electronic device of claim 1, further-comprising: a substrate, wherein the gate electrode is on the substrate, the gate insulating layer is on the gate electrode, and the graphene layer is on the gate insulating layer.
The electronic device of claim 1, wherein some of the plurality of quantum dots in the quantum dot layer have different bandgaps from each other.
The electronic device of claim 1, wherein the quantum dot layer is between the graphene layer and the first electrode, the quantum dot layer includes a plurality of first conductive type quantum dots contacting the graphene layer and a plurality of second conductive type quantum dots contacting the first electrode, the second conductive type is opposite the first conductive type, and the plurality of second conductive type quantum dots are stacked on the plurality of first conductive type quantum dots.
An image sensor comprising: a plurality of sensor pixels configured to sense light, wherein the plurality of sensor pixels are arranged in an array, each of the plurality of sensor pixels includes an electronic device according to claim 1, and the plurality of sensor pixels include a first sensor pixel and a second sensor pixel having different absorption wavelengths from each other, based on an absorption wavelength of the plurality of quantum dots in the first sensor pixel being different than an absorption wavelength of the plurality of quantum dots in the second sensor pixel. Page Application No.: 14/600,888 Attorney Docket No.: 2557SI-002233-US
A display apparatus comprising: a plurality of display pixels configured to emit light, wherein the plurality of display pixels are arranged in an array, each of the plurality of display pixels include an electronic device according to claim 1, and the plurality of display pixels include includes a first display pixel and a second display pixel configured to emit light of different wavelengths from each other, based on an emission characteristic of the plurality of quantum dots in the first display pixel being different than an emission characteristic of the plurality of quantum dots in the second display pixel.
The electronic device of claim 1, wherein the first electrode is on top of the quantum dot layer, and the second electrode is spaced apart from the quantum dot layer. *** END CLAIM LISTING *** Page 8
. canceled
An electronic device comprising: a channel layer including a graphene layer electrically contacting a quantum dot layer, the quantum dot layer including a plurality of quantum dots; a first electrode and a second electrode electrically connected to the channel layer, respectively, the first electrode being a source electrode or a drain electrode; a gate electrode configured to. control an electric SVG 14600888.05-08-2017.J₂SVECLQRXEAPX3.CLM.1.28.1558.2801.1579.2825.svg 0.08 0.07 Chemistry Black and white current between the first electrode and the second electrode via the channel layer; a gate insulating layer over the gate electrode and under the channel layer; and at least one of a first transport layer and a second transport layer, wherein Page 2 Application No.: 14/600,888 Attorney Docket No.: 2557S I -002233-US the first transport layer is between the graphene layer and the quantum dot layer, the second transport layer is between the quantum dot layer and the first electrode, the quantum dot layer is on only a partial region of the graphene layer, the first electrode contacts the quantum dot layer, and the second electrode directly contacts the graphene layer.
- 14.. canceled
canceled
A photovoltaic device comprising: a battery cell configured to convert light energy into electrical energy, the battery cell including an electronic device according to claim 25, the quantum dot layer and the graphene layer of the electronic device defining a channel layer of the battery cell, at least two of the plurality of inorganic quantum dots having different bandgaps from each other, and the first electrode and the second electrode being electrically connected to the channel layer, respectively.
The photovoltaic device of claim 19, wherein the quantum dot layer is on a partial region of the graphene layer, the first electrode is contacts the quantum dot layer, and the second electrode contacts the graphene layer.
The photovoltaic device of claim 19, wherein the quantum dot layer includes a first quantum dot layer on a first region of the graphene layer and a second quantum dot layer on a second region of the graphene layer, the second region is different than the first region, the first electrode is on the first quantum dot layer, and the second electrode is disposed on the second quantum dot layer. Page 6 Application No.: 14/600,888 Attorney Docket No.: 2557SI-002233-US
An in verter device comprising: a gate electrode; a gate insulating layer on the gate electrode; an electronic device according to claim 25, the quantum dot layer of the electronic device being a first quantum dot layer, the graphene layer of the electronic device being a first graphene layer on the gate insulating layer, the first quantum dot layer and the first graphene layer defining a first channel layer; a second channel layer on the gate insulating layer, the second channel layer spaced apart from the first channel layer and electrically connected to the first/SVG 14600888.05-08-2017.J₂SVECLQRXEAPX3.CLM.6.11.2309.1040.2321.1060.svg 0.067 0.04 Chemistry Black and white channel layer by the first electrode, the second channel layer including a second graphene layer and a second plurality of inorganic quantum dots, the second plurality of inorganic quantum dots between the second graphene layer and the first electrode; and a third electrode on the second graphene layer and spaced apart from the first electrode and the second quantum dot layer.
The inverter device of claim 22, wherein the first electrode contacts the first graphene layer, the second electrode contacts the second graphene layer, and the third electrode contacts both the first quantum dot layer and the second quantum dot layer.
An electronic device comprising: a graphene layer; a quantum dot layer on only one end of the graphene layer, the quantum dot layer including a plurality of inorganic quantum dots; a first electrode being a source electrode or a drain electrode on the quantum Page 7 Application No.: 14/600,888 Attorney Docket No.: 2557 SI -002233-US dot layer; a second electrode on an other end of the graphene layer directly contacting the graphene layer, the second electrode being spaced apart from the first electrode and the quantum dot layer a gate electrode; and a gate insulating layer over the gate electrode and under the graphene layer, wherein the graphene layer and the quantum dot layer define a channel layer, the channel layer contact the gate insulating layer, the gate insulating layer contacts the gate electrode, and the gate electrode is configured to control an electric current between the first electrode and the second electrode via the channel layer.
The electronic device of claim 25, wherein the plurality of inorganic quantum dots include a first plurality of inorganic quantum dots and a second plurality of inorganic quantum dots, and at least one of a band gap and a material of the first plurality of inorganic quantum dots is different than that of second plurality of inorganic quantum dots.
The electronic device of claim 25, further comprising: at least one of a first transport layer and a second transport layer, wherein the first tr ansport layer is on the graphene layer between the first electrode and the quantum dot layer, and the second transport layer is on the quantum dot layer.
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/quantum dot field-effect transistor
image sensor with graphene/quantum dot pixels
Materials described outside the worked examples.
graphene
quantum dots
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–20 nm | — |
— | 4–4.5 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,691,853Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an electronic device according to example embodiments; [44]
FIGS. 2A through 2 C are schematic cross-sectional views of an electronic device according to example embodiments; [45]
FIG. 3 is a schematic cross-sectional view of an electronic device array including a plurality of the electronic devices shown in
FIGS. 4A through 4D are schematic cross-sectional views illustrating processes of manufacturing the electronic device of
FIG. 5 is a schematic cross-sectional view of an electronic device according to example embodiments; [48]
FIG. 6 is a schematic cross-sectional view of an electronic device according to example embodiments; [49]
FIGS. 7A through 7 C are schematic cross-sectional views of various electronic devices according to example embodiments; 8 Atty. Dkt. No. 2557S I -002233-US …
FIGS. 8A and 8B are schematic cross-sectional views illustrating processes of forming a quantum dot layer in the electronic device of
FIGS. 9A and 9B are schematic cross-sectional views illustrating processes of forming a quantum dot layer in the electronic device of
FIG. 10 is a schematic cross-sectional view of an electronic device according to example embodiments; [53]
FIG. 11 is a schematic cross-sectional view of an electronic device according to example embodiments; [54]
FIG. 12 is a schematic cross-sectional view of an electronic device according to example embodiments; [55]
FIG. 13 is a schematic cross-sectional view of an electronic device according to example embodiments; [56]
FIG. 14 is an equivalent circuit diagram of the electronic device of
FIGS. 15A through 15D are schematic cross-sectional views illustrating processes of manufacturing the electronic device of
FIGS. 16A and 16B are schematic cross-sectional views of electronic devices according to example embodiments
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device comprising: a channel layer including a graphene layer electrically contacting a quantum dot layer, the quantum dot layer including a plurality of quantum dots; a first electrode and a second electrode electrically connected to the channel layer, respectively, the first electrode being a source electrode or a drain electrode, the first electrode being arranged so the quantum dot layer is between the graphene layer and a surface of the first electrode that faces the graphene layer; a gate electrode configured to control an electric current between the first electrode and the second electrode via the channel layer; and a gate insulating layer over the gate electrode and under the channel layer, wherein the quantum dot layer is on only a partial region of the graphene layer, the first electrode contacts the quantum dot layer, and the second electrode directly contacts the graphene layer.
The electronic device of claim 1, wherein the quantum dot layer includes a plurality of first quantum dots and a plurality of second quantum dots that are different from the plurality of first quantum dots.
The electronic device of claim 1, further-comprising: a substrate, wherein the gate electrode is on the substrate, the gate insulating layer is on the gate electrode, and the graphene layer is on the gate insulating layer.
The electronic device of claim 1, wherein some of the plurality of quantum dots in the quantum dot layer have different bandgaps from each other.
The electronic device of claim 1, wherein the quantum dot layer is between the graphene layer and the first electrode, the quantum dot layer includes a plurality of first conductive type quantum dots contacting the graphene layer and a plurality of second conductive type quantum dots contacting the first electrode, the second conductive type is opposite the first conductive type, and the plurality of second conductive type quantum dots are stacked on the plurality of first conductive type quantum dots.
An image sensor comprising: a plurality of sensor pixels configured to sense light, wherein the plurality of sensor pixels are arranged in an array, each of the plurality of sensor pixels includes an electronic device according to claim 1, and the plurality of sensor pixels include a first sensor pixel and a second sensor pixel having different absorption wavelengths from each other, based on an absorption wavelength of the plurality of quantum dots in the first sensor pixel being different than an absorption wavelength of the plurality of quantum dots in the second sensor pixel. Page Application No.: 14/600,888 Attorney Docket No.: 2557SI-002233-US
A display apparatus comprising: a plurality of display pixels configured to emit light, wherein the plurality of display pixels are arranged in an array, each of the plurality of display pixels include an electronic device according to claim 1, and the plurality of display pixels include includes a first display pixel and a second display pixel configured to emit light of different wavelengths from each other, based on an emission characteristic of the plurality of quantum dots in the first display pixel being different than an emission characteristic of the plurality of quantum dots in the second display pixel.
The electronic device of claim 1, wherein the first electrode is on top of the quantum dot layer, and the second electrode is spaced apart from the quantum dot layer. *** END CLAIM LISTING *** Page 8
. canceled
An electronic device comprising: a channel layer including a graphene layer electrically contacting a quantum dot layer, the quantum dot layer including a plurality of quantum dots; a first electrode and a second electrode electrically connected to the channel layer, respectively, the first electrode being a source electrode or a drain electrode; a gate electrode configured to. control an electric SVG 14600888.05-08-2017.J₂SVECLQRXEAPX3.CLM.1.28.1558.2801.1579.2825.svg 0.08 0.07 Chemistry Black and white current between the first electrode and the second electrode via the channel layer; a gate insulating layer over the gate electrode and under the channel layer; and at least one of a first transport layer and a second transport layer, wherein Page 2 Application No.: 14/600,888 Attorney Docket No.: 2557S I -002233-US the first transport layer is between the graphene layer and the quantum dot layer, the second transport layer is between the quantum dot layer and the first electrode, the quantum dot layer is on only a partial region of the graphene layer, the first electrode contacts the quantum dot layer, and the second electrode directly contacts the graphene layer.
- 14.. canceled
canceled
A photovoltaic device comprising: a battery cell configured to convert light energy into electrical energy, the battery cell including an electronic device according to claim 25, the quantum dot layer and the graphene layer of the electronic device defining a channel layer of the battery cell, at least two of the plurality of inorganic quantum dots having different bandgaps from each other, and the first electrode and the second electrode being electrically connected to the channel layer, respectively.
The photovoltaic device of claim 19, wherein the quantum dot layer is on a partial region of the graphene layer, the first electrode is contacts the quantum dot layer, and the second electrode contacts the graphene layer.
The photovoltaic device of claim 19, wherein the quantum dot layer includes a first quantum dot layer on a first region of the graphene layer and a second quantum dot layer on a second region of the graphene layer, the second region is different than the first region, the first electrode is on the first quantum dot layer, and the second electrode is disposed on the second quantum dot layer. Page 6 Application No.: 14/600,888 Attorney Docket No.: 2557SI-002233-US
An in verter device comprising: a gate electrode; a gate insulating layer on the gate electrode; an electronic device according to claim 25, the quantum dot layer of the electronic device being a first quantum dot layer, the graphene layer of the electronic device being a first graphene layer on the gate insulating layer, the first quantum dot layer and the first graphene layer defining a first channel layer; a second channel layer on the gate insulating layer, the second channel layer spaced apart from the first channel layer and electrically connected to the first/SVG 14600888.05-08-2017.J₂SVECLQRXEAPX3.CLM.6.11.2309.1040.2321.1060.svg 0.067 0.04 Chemistry Black and white channel layer by the first electrode, the second channel layer including a second graphene layer and a second plurality of inorganic quantum dots, the second plurality of inorganic quantum dots between the second graphene layer and the first electrode; and a third electrode on the second graphene layer and spaced apart from the first electrode and the second quantum dot layer.
The inverter device of claim 22, wherein the first electrode contacts the first graphene layer, the second electrode contacts the second graphene layer, and the third electrode contacts both the first quantum dot layer and the second quantum dot layer.
An electronic device comprising: a graphene layer; a quantum dot layer on only one end of the graphene layer, the quantum dot layer including a plurality of inorganic quantum dots; a first electrode being a source electrode or a drain electrode on the quantum Page 7 Application No.: 14/600,888 Attorney Docket No.: 2557 SI -002233-US dot layer; a second electrode on an other end of the graphene layer directly contacting the graphene layer, the second electrode being spaced apart from the first electrode and the quantum dot layer a gate electrode; and a gate insulating layer over the gate electrode and under the graphene layer, wherein the graphene layer and the quantum dot layer define a channel layer, the channel layer contact the gate insulating layer, the gate insulating layer contacts the gate electrode, and the gate electrode is configured to control an electric current between the first electrode and the second electrode via the channel layer.
The electronic device of claim 25, wherein the plurality of inorganic quantum dots include a first plurality of inorganic quantum dots and a second plurality of inorganic quantum dots, and at least one of a band gap and a material of the first plurality of inorganic quantum dots is different than that of second plurality of inorganic quantum dots.
The electronic device of claim 25, further comprising: at least one of a first transport layer and a second transport layer, wherein the first tr ansport layer is on the graphene layer between the first electrode and the quantum dot layer, and the second transport layer is on the quantum dot layer.
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/quantum dot field-effect transistor
image sensor with graphene/quantum dot pixels
Materials described outside the worked examples.
graphene
quantum dots
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–20 nm | — |
— | 4–4.5 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,691,853Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an electronic device according to example embodiments; [44]
FIGS. 2A through 2 C are schematic cross-sectional views of an electronic device according to example embodiments; [45]
FIG. 3 is a schematic cross-sectional view of an electronic device array including a plurality of the electronic devices shown in
FIGS. 4A through 4D are schematic cross-sectional views illustrating processes of manufacturing the electronic device of
FIG. 5 is a schematic cross-sectional view of an electronic device according to example embodiments; [48]
FIG. 6 is a schematic cross-sectional view of an electronic device according to example embodiments; [49]
FIGS. 7A through 7 C are schematic cross-sectional views of various electronic devices according to example embodiments; 8 Atty. Dkt. No. 2557S I -002233-US …
FIGS. 8A and 8B are schematic cross-sectional views illustrating processes of forming a quantum dot layer in the electronic device of
FIGS. 9A and 9B are schematic cross-sectional views illustrating processes of forming a quantum dot layer in the electronic device of
FIG. 10 is a schematic cross-sectional view of an electronic device according to example embodiments; [53]
FIG. 11 is a schematic cross-sectional view of an electronic device according to example embodiments; [54]
FIG. 12 is a schematic cross-sectional view of an electronic device according to example embodiments; [55]
FIG. 13 is a schematic cross-sectional view of an electronic device according to example embodiments; [56]
FIG. 14 is an equivalent circuit diagram of the electronic device of
FIGS. 15A through 15D are schematic cross-sectional views illustrating processes of manufacturing the electronic device of
FIGS. 16A and 16B are schematic cross-sectional views of electronic devices according to example embodiments
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device comprising: a channel layer including a graphene layer electrically contacting a quantum dot layer, the quantum dot layer including a plurality of quantum dots; a first electrode and a second electrode electrically connected to the channel layer, respectively, the first electrode being a source electrode or a drain electrode, the first electrode being arranged so the quantum dot layer is between the graphene layer and a surface of the first electrode that faces the graphene layer; a gate electrode configured to control an electric current between the first electrode and the second electrode via the channel layer; and a gate insulating layer over the gate electrode and under the channel layer, wherein the quantum dot layer is on only a partial region of the graphene layer, the first electrode contacts the quantum dot layer, and the second electrode directly contacts the graphene layer.
The electronic device of claim 1, wherein the quantum dot layer includes a plurality of first quantum dots and a plurality of second quantum dots that are different from the plurality of first quantum dots.
The electronic device of claim 1, further-comprising: a substrate, wherein the gate electrode is on the substrate, the gate insulating layer is on the gate electrode, and the graphene layer is on the gate insulating layer.
The electronic device of claim 1, wherein some of the plurality of quantum dots in the quantum dot layer have different bandgaps from each other.
The electronic device of claim 1, wherein the quantum dot layer is between the graphene layer and the first electrode, the quantum dot layer includes a plurality of first conductive type quantum dots contacting the graphene layer and a plurality of second conductive type quantum dots contacting the first electrode, the second conductive type is opposite the first conductive type, and the plurality of second conductive type quantum dots are stacked on the plurality of first conductive type quantum dots.
An image sensor comprising: a plurality of sensor pixels configured to sense light, wherein the plurality of sensor pixels are arranged in an array, each of the plurality of sensor pixels includes an electronic device according to claim 1, and the plurality of sensor pixels include a first sensor pixel and a second sensor pixel having different absorption wavelengths from each other, based on an absorption wavelength of the plurality of quantum dots in the first sensor pixel being different than an absorption wavelength of the plurality of quantum dots in the second sensor pixel. Page Application No.: 14/600,888 Attorney Docket No.: 2557SI-002233-US
A display apparatus comprising: a plurality of display pixels configured to emit light, wherein the plurality of display pixels are arranged in an array, each of the plurality of display pixels include an electronic device according to claim 1, and the plurality of display pixels include includes a first display pixel and a second display pixel configured to emit light of different wavelengths from each other, based on an emission characteristic of the plurality of quantum dots in the first display pixel being different than an emission characteristic of the plurality of quantum dots in the second display pixel.
The electronic device of claim 1, wherein the first electrode is on top of the quantum dot layer, and the second electrode is spaced apart from the quantum dot layer. *** END CLAIM LISTING *** Page 8
. canceled
An electronic device comprising: a channel layer including a graphene layer electrically contacting a quantum dot layer, the quantum dot layer including a plurality of quantum dots; a first electrode and a second electrode electrically connected to the channel layer, respectively, the first electrode being a source electrode or a drain electrode; a gate electrode configured to. control an electric SVG 14600888.05-08-2017.J₂SVECLQRXEAPX3.CLM.1.28.1558.2801.1579.2825.svg 0.08 0.07 Chemistry Black and white current between the first electrode and the second electrode via the channel layer; a gate insulating layer over the gate electrode and under the channel layer; and at least one of a first transport layer and a second transport layer, wherein Page 2 Application No.: 14/600,888 Attorney Docket No.: 2557S I -002233-US the first transport layer is between the graphene layer and the quantum dot layer, the second transport layer is between the quantum dot layer and the first electrode, the quantum dot layer is on only a partial region of the graphene layer, the first electrode contacts the quantum dot layer, and the second electrode directly contacts the graphene layer.
- 14.. canceled
canceled
A photovoltaic device comprising: a battery cell configured to convert light energy into electrical energy, the battery cell including an electronic device according to claim 25, the quantum dot layer and the graphene layer of the electronic device defining a channel layer of the battery cell, at least two of the plurality of inorganic quantum dots having different bandgaps from each other, and the first electrode and the second electrode being electrically connected to the channel layer, respectively.
The photovoltaic device of claim 19, wherein the quantum dot layer is on a partial region of the graphene layer, the first electrode is contacts the quantum dot layer, and the second electrode contacts the graphene layer.
The photovoltaic device of claim 19, wherein the quantum dot layer includes a first quantum dot layer on a first region of the graphene layer and a second quantum dot layer on a second region of the graphene layer, the second region is different than the first region, the first electrode is on the first quantum dot layer, and the second electrode is disposed on the second quantum dot layer. Page 6 Application No.: 14/600,888 Attorney Docket No.: 2557SI-002233-US
An in verter device comprising: a gate electrode; a gate insulating layer on the gate electrode; an electronic device according to claim 25, the quantum dot layer of the electronic device being a first quantum dot layer, the graphene layer of the electronic device being a first graphene layer on the gate insulating layer, the first quantum dot layer and the first graphene layer defining a first channel layer; a second channel layer on the gate insulating layer, the second channel layer spaced apart from the first channel layer and electrically connected to the first/SVG 14600888.05-08-2017.J₂SVECLQRXEAPX3.CLM.6.11.2309.1040.2321.1060.svg 0.067 0.04 Chemistry Black and white channel layer by the first electrode, the second channel layer including a second graphene layer and a second plurality of inorganic quantum dots, the second plurality of inorganic quantum dots between the second graphene layer and the first electrode; and a third electrode on the second graphene layer and spaced apart from the first electrode and the second quantum dot layer.
The inverter device of claim 22, wherein the first electrode contacts the first graphene layer, the second electrode contacts the second graphene layer, and the third electrode contacts both the first quantum dot layer and the second quantum dot layer.
An electronic device comprising: a graphene layer; a quantum dot layer on only one end of the graphene layer, the quantum dot layer including a plurality of inorganic quantum dots; a first electrode being a source electrode or a drain electrode on the quantum Page 7 Application No.: 14/600,888 Attorney Docket No.: 2557 SI -002233-US dot layer; a second electrode on an other end of the graphene layer directly contacting the graphene layer, the second electrode being spaced apart from the first electrode and the quantum dot layer a gate electrode; and a gate insulating layer over the gate electrode and under the graphene layer, wherein the graphene layer and the quantum dot layer define a channel layer, the channel layer contact the gate insulating layer, the gate insulating layer contacts the gate electrode, and the gate electrode is configured to control an electric current between the first electrode and the second electrode via the channel layer.
The electronic device of claim 25, wherein the plurality of inorganic quantum dots include a first plurality of inorganic quantum dots and a second plurality of inorganic quantum dots, and at least one of a band gap and a material of the first plurality of inorganic quantum dots is different than that of second plurality of inorganic quantum dots.
The electronic device of claim 25, further comprising: at least one of a first transport layer and a second transport layer, wherein the first tr ansport layer is on the graphene layer between the first electrode and the quantum dot layer, and the second transport layer is on the quantum dot layer.
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/quantum dot field-effect transistor
image sensor with graphene/quantum dot pixels
Materials described outside the worked examples.
graphene
quantum dots
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–20 nm | — |
— | 4–4.5 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,691,853Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of an electronic device according to example embodiments; [44]
FIGS. 2A through 2 C are schematic cross-sectional views of an electronic device according to example embodiments; [45]
FIG. 3 is a schematic cross-sectional view of an electronic device array including a plurality of the electronic devices shown in
FIGS. 4A through 4D are schematic cross-sectional views illustrating processes of manufacturing the electronic device of
FIG. 5 is a schematic cross-sectional view of an electronic device according to example embodiments; [48]
FIG. 6 is a schematic cross-sectional view of an electronic device according to example embodiments; [49]
FIGS. 7A through 7 C are schematic cross-sectional views of various electronic devices according to example embodiments; 8 Atty. Dkt. No. 2557S I -002233-US …
FIGS. 8A and 8B are schematic cross-sectional views illustrating processes of forming a quantum dot layer in the electronic device of
FIGS. 9A and 9B are schematic cross-sectional views illustrating processes of forming a quantum dot layer in the electronic device of
FIG. 10 is a schematic cross-sectional view of an electronic device according to example embodiments; [53]
FIG. 11 is a schematic cross-sectional view of an electronic device according to example embodiments; [54]
FIG. 12 is a schematic cross-sectional view of an electronic device according to example embodiments; [55]
FIG. 13 is a schematic cross-sectional view of an electronic device according to example embodiments; [56]
FIG. 14 is an equivalent circuit diagram of the electronic device of
FIGS. 15A through 15D are schematic cross-sectional views illustrating processes of manufacturing the electronic device of
FIGS. 16A and 16B are schematic cross-sectional views of electronic devices according to example embodiments
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device comprising: a channel layer including a graphene layer electrically contacting a quantum dot layer, the quantum dot layer including a plurality of quantum dots; a first electrode and a second electrode electrically connected to the channel layer, respectively, the first electrode being a source electrode or a drain electrode, the first electrode being arranged so the quantum dot layer is between the graphene layer and a surface of the first electrode that faces the graphene layer; a gate electrode configured to control an electric current between the first electrode and the second electrode via the channel layer; and a gate insulating layer over the gate electrode and under the channel layer, wherein the quantum dot layer is on only a partial region of the graphene layer, the first electrode contacts the quantum dot layer, and the second electrode directly contacts the graphene layer.
The electronic device of claim 1, wherein the quantum dot layer includes a plurality of first quantum dots and a plurality of second quantum dots that are different from the plurality of first quantum dots.
The electronic device of claim 1, further-comprising: a substrate, wherein the gate electrode is on the substrate, the gate insulating layer is on the gate electrode, and the graphene layer is on the gate insulating layer.
The electronic device of claim 1, wherein some of the plurality of quantum dots in the quantum dot layer have different bandgaps from each other.
The electronic device of claim 1, wherein the quantum dot layer is between the graphene layer and the first electrode, the quantum dot layer includes a plurality of first conductive type quantum dots contacting the graphene layer and a plurality of second conductive type quantum dots contacting the first electrode, the second conductive type is opposite the first conductive type, and the plurality of second conductive type quantum dots are stacked on the plurality of first conductive type quantum dots.
An image sensor comprising: a plurality of sensor pixels configured to sense light, wherein the plurality of sensor pixels are arranged in an array, each of the plurality of sensor pixels includes an electronic device according to claim 1, and the plurality of sensor pixels include a first sensor pixel and a second sensor pixel having different absorption wavelengths from each other, based on an absorption wavelength of the plurality of quantum dots in the first sensor pixel being different than an absorption wavelength of the plurality of quantum dots in the second sensor pixel. Page Application No.: 14/600,888 Attorney Docket No.: 2557SI-002233-US
A display apparatus comprising: a plurality of display pixels configured to emit light, wherein the plurality of display pixels are arranged in an array, each of the plurality of display pixels include an electronic device according to claim 1, and the plurality of display pixels include includes a first display pixel and a second display pixel configured to emit light of different wavelengths from each other, based on an emission characteristic of the plurality of quantum dots in the first display pixel being different than an emission characteristic of the plurality of quantum dots in the second display pixel.
The electronic device of claim 1, wherein the first electrode is on top of the quantum dot layer, and the second electrode is spaced apart from the quantum dot layer. *** END CLAIM LISTING *** Page 8
. canceled
An electronic device comprising: a channel layer including a graphene layer electrically contacting a quantum dot layer, the quantum dot layer including a plurality of quantum dots; a first electrode and a second electrode electrically connected to the channel layer, respectively, the first electrode being a source electrode or a drain electrode; a gate electrode configured to. control an electric SVG 14600888.05-08-2017.J₂SVECLQRXEAPX3.CLM.1.28.1558.2801.1579.2825.svg 0.08 0.07 Chemistry Black and white current between the first electrode and the second electrode via the channel layer; a gate insulating layer over the gate electrode and under the channel layer; and at least one of a first transport layer and a second transport layer, wherein Page 2 Application No.: 14/600,888 Attorney Docket No.: 2557S I -002233-US the first transport layer is between the graphene layer and the quantum dot layer, the second transport layer is between the quantum dot layer and the first electrode, the quantum dot layer is on only a partial region of the graphene layer, the first electrode contacts the quantum dot layer, and the second electrode directly contacts the graphene layer.
- 14.. canceled
canceled
A photovoltaic device comprising: a battery cell configured to convert light energy into electrical energy, the battery cell including an electronic device according to claim 25, the quantum dot layer and the graphene layer of the electronic device defining a channel layer of the battery cell, at least two of the plurality of inorganic quantum dots having different bandgaps from each other, and the first electrode and the second electrode being electrically connected to the channel layer, respectively.
The photovoltaic device of claim 19, wherein the quantum dot layer is on a partial region of the graphene layer, the first electrode is contacts the quantum dot layer, and the second electrode contacts the graphene layer.
The photovoltaic device of claim 19, wherein the quantum dot layer includes a first quantum dot layer on a first region of the graphene layer and a second quantum dot layer on a second region of the graphene layer, the second region is different than the first region, the first electrode is on the first quantum dot layer, and the second electrode is disposed on the second quantum dot layer. Page 6 Application No.: 14/600,888 Attorney Docket No.: 2557SI-002233-US
An in verter device comprising: a gate electrode; a gate insulating layer on the gate electrode; an electronic device according to claim 25, the quantum dot layer of the electronic device being a first quantum dot layer, the graphene layer of the electronic device being a first graphene layer on the gate insulating layer, the first quantum dot layer and the first graphene layer defining a first channel layer; a second channel layer on the gate insulating layer, the second channel layer spaced apart from the first channel layer and electrically connected to the first/SVG 14600888.05-08-2017.J₂SVECLQRXEAPX3.CLM.6.11.2309.1040.2321.1060.svg 0.067 0.04 Chemistry Black and white channel layer by the first electrode, the second channel layer including a second graphene layer and a second plurality of inorganic quantum dots, the second plurality of inorganic quantum dots between the second graphene layer and the first electrode; and a third electrode on the second graphene layer and spaced apart from the first electrode and the second quantum dot layer.
The inverter device of claim 22, wherein the first electrode contacts the first graphene layer, the second electrode contacts the second graphene layer, and the third electrode contacts both the first quantum dot layer and the second quantum dot layer.
An electronic device comprising: a graphene layer; a quantum dot layer on only one end of the graphene layer, the quantum dot layer including a plurality of inorganic quantum dots; a first electrode being a source electrode or a drain electrode on the quantum Page 7 Application No.: 14/600,888 Attorney Docket No.: 2557 SI -002233-US dot layer; a second electrode on an other end of the graphene layer directly contacting the graphene layer, the second electrode being spaced apart from the first electrode and the quantum dot layer a gate electrode; and a gate insulating layer over the gate electrode and under the graphene layer, wherein the graphene layer and the quantum dot layer define a channel layer, the channel layer contact the gate insulating layer, the gate insulating layer contacts the gate electrode, and the gate electrode is configured to control an electric current between the first electrode and the second electrode via the channel layer.
The electronic device of claim 25, wherein the plurality of inorganic quantum dots include a first plurality of inorganic quantum dots and a second plurality of inorganic quantum dots, and at least one of a band gap and a material of the first plurality of inorganic quantum dots is different than that of second plurality of inorganic quantum dots.
The electronic device of claim 25, further comprising: at least one of a first transport layer and a second transport layer, wherein the first tr ansport layer is on the graphene layer between the first electrode and the quantum dot layer, and the second transport layer is on the quantum dot layer.
. canceled
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene/quantum dot field-effect transistor
image sensor with graphene/quantum dot pixels
Materials described outside the worked examples.
graphene
quantum dots
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 4–20 nm | — |
— | 4–4.5 eV |
Related documents with shared materials, methods, properties, or citations.
display apparatus with graphene/quantum dot pixels
photovoltaic device with graphene/inorganic quantum dot channel
inverter device with dual graphene/quantum dot channel layers
inorganic quantum dots
| — |
— | 4.5–5 eV | — |
Thickness | 400–2000 nm | — |
Thickness | 400–700 nm | — |
NANOPATCH GRAPHENE COMPOSITE
display apparatus with graphene/quantum dot pixels
photovoltaic device with graphene/inorganic quantum dot channel
inverter device with dual graphene/quantum dot channel layers
inorganic quantum dots
| — |
— | 4.5–5 eV | — |
Thickness | 400–2000 nm | — |
Thickness | 400–700 nm | — |
NANOPATCH GRAPHENE COMPOSITE
display apparatus with graphene/quantum dot pixels
photovoltaic device with graphene/inorganic quantum dot channel
inverter device with dual graphene/quantum dot channel layers
inorganic quantum dots
| — |
— | 4.5–5 eV | — |
Thickness | 400–2000 nm | — |
Thickness | 400–700 nm | — |
NANOPATCH GRAPHENE COMPOSITE
display apparatus with graphene/quantum dot pixels
photovoltaic device with graphene/inorganic quantum dot channel
inverter device with dual graphene/quantum dot channel layers
inorganic quantum dots
| — |
— | 4.5–5 eV | — |
Thickness | 400–2000 nm | — |
Thickness | 400–700 nm | — |
NANOPATCH GRAPHENE COMPOSITE