Patent
US 9,869,651ammonia
NH₃
nitrogen
N₂
silicon substrate
| 1.4 ppm |
C |
Voltage | 8–165 V | — |
Voltage | 74–152 V | — |
Voltage | ≥ 1 V | — |
Duration | 10–60 minutes | — |
ammonia
NH₃
nitrogen
N₂
silicon substrate
| 1.4 ppm |
C |
Voltage | 8–165 V | — |
Voltage | 74–152 V | — |
Voltage | ≥ 1 V | — |
Duration | 10–60 minutes | — |
ammonia
NH₃
nitrogen
N₂
silicon substrate
| 1.4 ppm |
C |
Voltage | 8–165 V | — |
Voltage | 74–152 V | — |
Voltage | ≥ 1 V | — |
Duration | 10–60 minutes | — |
ammonia
NH₃
nitrogen
N₂
silicon substrate
| 1.4 ppm |
C |
Voltage | 8–165 V | — |
Voltage | 74–152 V | — |
Voltage | ≥ 1 V | — |
Duration | 10–60 minutes | — |