Patent
US 10,168,297DNA-Decorated Graphene Chemical Sensors
Alan T. Johnson JR.
US
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Patent
Atlas literature
Patent
US 10,168,297Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b). The polarity of this shif t is consistent with chemical gating by negatively charged molecules in the vicinity of the graphene. Using computer …
FIG. 2 b demonstrates the normalized changes in current versus time for ssDNA-graphene vapor response with measurements of propionic acid at various …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: with a nucleic acid functionalized clean graphene sensor device that comprises (i) an insulator thin-film disposed directly adjacent to a back-gate substrate, (ii) at least one positive electrode disposed directly adjacent to said insulator thin-film, opposite to said back-gate substrate, (111) at least one negative electrode disposed directly adjacent to said insulator thin- film, opposite to said back-gate substrate, and (iv) the clean graphene being disposed between, and in electrical communication with, said positive and negative electrodes and the clean graphene being single-atom thick graphene, contacting the nucleic acid functionalized clean graphene sensor device with a medium; monitoring a conductance of the nucleic acid functionalized clean graphene; and correlating a change in the conductance to the presence, absence, or concentration of molecules, or any combination thereof. Currently amended
The method of claim 1, wherein said contacting is accomplished by flowing the medium over said sensor device. Original
The method of claim 1, wherein the medium is a solid, liquid, gas, or combination thereof. Original
The method of claim 1, whereby monitoring the conductance occurs when applying a 1 mV bias and holding the gate voltage at 0. Previously presented
The method of claim 1, whereby the conductance of the nucleic acid functionalized clean graphene is monitored via electrodes, wherein the electrodes comprise gold and chromium. Original
The method of claim 1, further comprising: contacting a plurality of the nucleic acid functionalized clean graphene sensor devices with the medium, wherein each of the sensor devices is functionalized with a different nucleic acid; monitoring the conductance of each sensor device; and correlating a change in conductance into each device to the presence, absence, or concentration of molecules, or any combination thereof. Previously presented
The method of claim 1, wherein the nucleic acid comprises single-stranded DNA. Original
The method of claim 1, wherein the device has a hole mobility of 500 cm 2/V-s to 200,000 cm 2/V-s. Original
The method of claim 1, wherein the device has/V-s. Original
The method of claim 1, wherein the device has 2/V-s. Original
16 The method of claim 1, wherein the device about 1 x 10 15/cm 2 at zero gate voltage. Office
The method of claim 1, wherein the medium or an environmental sample. Original
Canceled
Canceled
Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nucleic acid functionalized clean graphene sensor device (field-effect transistor)
Materials described outside the worked examples.
clean graphene
nucleic acid/single-stranded DNA
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hole mobility (claimed range) | 500–200000 cm2/V-s | clean graphene |
hole mobility (claimed range, claim 20/description) | 500–5000 cm2/V-s |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,168,297Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b). The polarity of this shif t is consistent with chemical gating by negatively charged molecules in the vicinity of the graphene. Using computer …
FIG. 2 b demonstrates the normalized changes in current versus time for ssDNA-graphene vapor response with measurements of propionic acid at various …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: with a nucleic acid functionalized clean graphene sensor device that comprises (i) an insulator thin-film disposed directly adjacent to a back-gate substrate, (ii) at least one positive electrode disposed directly adjacent to said insulator thin-film, opposite to said back-gate substrate, (111) at least one negative electrode disposed directly adjacent to said insulator thin- film, opposite to said back-gate substrate, and (iv) the clean graphene being disposed between, and in electrical communication with, said positive and negative electrodes and the clean graphene being single-atom thick graphene, contacting the nucleic acid functionalized clean graphene sensor device with a medium; monitoring a conductance of the nucleic acid functionalized clean graphene; and correlating a change in the conductance to the presence, absence, or concentration of molecules, or any combination thereof. Currently amended
The method of claim 1, wherein said contacting is accomplished by flowing the medium over said sensor device. Original
The method of claim 1, wherein the medium is a solid, liquid, gas, or combination thereof. Original
The method of claim 1, whereby monitoring the conductance occurs when applying a 1 mV bias and holding the gate voltage at 0. Previously presented
The method of claim 1, whereby the conductance of the nucleic acid functionalized clean graphene is monitored via electrodes, wherein the electrodes comprise gold and chromium. Original
The method of claim 1, further comprising: contacting a plurality of the nucleic acid functionalized clean graphene sensor devices with the medium, wherein each of the sensor devices is functionalized with a different nucleic acid; monitoring the conductance of each sensor device; and correlating a change in conductance into each device to the presence, absence, or concentration of molecules, or any combination thereof. Previously presented
The method of claim 1, wherein the nucleic acid comprises single-stranded DNA. Original
The method of claim 1, wherein the device has a hole mobility of 500 cm 2/V-s to 200,000 cm 2/V-s. Original
The method of claim 1, wherein the device has/V-s. Original
The method of claim 1, wherein the device has 2/V-s. Original
16 The method of claim 1, wherein the device about 1 x 10 15/cm 2 at zero gate voltage. Office
The method of claim 1, wherein the medium or an environmental sample. Original
Canceled
Canceled
Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nucleic acid functionalized clean graphene sensor device (field-effect transistor)
Materials described outside the worked examples.
clean graphene
nucleic acid/single-stranded DNA
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hole mobility (claimed range) | 500–200000 cm2/V-s | clean graphene |
hole mobility (claimed range, claim 20/description) | 500–5000 cm2/V-s |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,168,297Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b). The polarity of this shif t is consistent with chemical gating by negatively charged molecules in the vicinity of the graphene. Using computer …
FIG. 2 b demonstrates the normalized changes in current versus time for ssDNA-graphene vapor response with measurements of propionic acid at various …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: with a nucleic acid functionalized clean graphene sensor device that comprises (i) an insulator thin-film disposed directly adjacent to a back-gate substrate, (ii) at least one positive electrode disposed directly adjacent to said insulator thin-film, opposite to said back-gate substrate, (111) at least one negative electrode disposed directly adjacent to said insulator thin- film, opposite to said back-gate substrate, and (iv) the clean graphene being disposed between, and in electrical communication with, said positive and negative electrodes and the clean graphene being single-atom thick graphene, contacting the nucleic acid functionalized clean graphene sensor device with a medium; monitoring a conductance of the nucleic acid functionalized clean graphene; and correlating a change in the conductance to the presence, absence, or concentration of molecules, or any combination thereof. Currently amended
The method of claim 1, wherein said contacting is accomplished by flowing the medium over said sensor device. Original
The method of claim 1, wherein the medium is a solid, liquid, gas, or combination thereof. Original
The method of claim 1, whereby monitoring the conductance occurs when applying a 1 mV bias and holding the gate voltage at 0. Previously presented
The method of claim 1, whereby the conductance of the nucleic acid functionalized clean graphene is monitored via electrodes, wherein the electrodes comprise gold and chromium. Original
The method of claim 1, further comprising: contacting a plurality of the nucleic acid functionalized clean graphene sensor devices with the medium, wherein each of the sensor devices is functionalized with a different nucleic acid; monitoring the conductance of each sensor device; and correlating a change in conductance into each device to the presence, absence, or concentration of molecules, or any combination thereof. Previously presented
The method of claim 1, wherein the nucleic acid comprises single-stranded DNA. Original
The method of claim 1, wherein the device has a hole mobility of 500 cm 2/V-s to 200,000 cm 2/V-s. Original
The method of claim 1, wherein the device has/V-s. Original
The method of claim 1, wherein the device has 2/V-s. Original
16 The method of claim 1, wherein the device about 1 x 10 15/cm 2 at zero gate voltage. Office
The method of claim 1, wherein the medium or an environmental sample. Original
Canceled
Canceled
Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nucleic acid functionalized clean graphene sensor device (field-effect transistor)
Materials described outside the worked examples.
clean graphene
nucleic acid/single-stranded DNA
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hole mobility (claimed range) | 500–200000 cm2/V-s | clean graphene |
hole mobility (claimed range, claim 20/description) | 500–5000 cm2/V-s |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,168,297Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 b). The polarity of this shif t is consistent with chemical gating by negatively charged molecules in the vicinity of the graphene. Using computer …
FIG. 2 b demonstrates the normalized changes in current versus time for ssDNA-graphene vapor response with measurements of propionic acid at various …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: with a nucleic acid functionalized clean graphene sensor device that comprises (i) an insulator thin-film disposed directly adjacent to a back-gate substrate, (ii) at least one positive electrode disposed directly adjacent to said insulator thin-film, opposite to said back-gate substrate, (111) at least one negative electrode disposed directly adjacent to said insulator thin- film, opposite to said back-gate substrate, and (iv) the clean graphene being disposed between, and in electrical communication with, said positive and negative electrodes and the clean graphene being single-atom thick graphene, contacting the nucleic acid functionalized clean graphene sensor device with a medium; monitoring a conductance of the nucleic acid functionalized clean graphene; and correlating a change in the conductance to the presence, absence, or concentration of molecules, or any combination thereof. Currently amended
The method of claim 1, wherein said contacting is accomplished by flowing the medium over said sensor device. Original
The method of claim 1, wherein the medium is a solid, liquid, gas, or combination thereof. Original
The method of claim 1, whereby monitoring the conductance occurs when applying a 1 mV bias and holding the gate voltage at 0. Previously presented
The method of claim 1, whereby the conductance of the nucleic acid functionalized clean graphene is monitored via electrodes, wherein the electrodes comprise gold and chromium. Original
The method of claim 1, further comprising: contacting a plurality of the nucleic acid functionalized clean graphene sensor devices with the medium, wherein each of the sensor devices is functionalized with a different nucleic acid; monitoring the conductance of each sensor device; and correlating a change in conductance into each device to the presence, absence, or concentration of molecules, or any combination thereof. Previously presented
The method of claim 1, wherein the nucleic acid comprises single-stranded DNA. Original
The method of claim 1, wherein the device has a hole mobility of 500 cm 2/V-s to 200,000 cm 2/V-s. Original
The method of claim 1, wherein the device has/V-s. Original
The method of claim 1, wherein the device has 2/V-s. Original
16 The method of claim 1, wherein the device about 1 x 10 15/cm 2 at zero gate voltage. Office
The method of claim 1, wherein the medium or an environmental sample. Original
Canceled
Canceled
Canceled
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nucleic acid functionalized clean graphene sensor device (field-effect transistor)
Materials described outside the worked examples.
clean graphene
nucleic acid/single-stranded DNA
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
hole mobility (claimed range) | 500–200000 cm2/V-s | clean graphene |
hole mobility (claimed range, claim 20/description) | 500–5000 cm2/V-s |
Related documents with shared materials, methods, properties, or citations.
insulator thin-film
gold
Au
chromium
Cr
silicon dioxide
SiO₂
silicon (p-doped or n-doped)
Si
hole mobility (claimed range, claim 20 variant) | 1600–5000 cm2/V-s | clean graphene |
Thickness | 10–1000 nm | — |
Thickness | 0.1–1 mm | — |
Thickness | ≥ 400 nm | — |
insulator thin-film
gold
Au
chromium
Cr
silicon dioxide
SiO₂
silicon (p-doped or n-doped)
Si
hole mobility (claimed range, claim 20 variant) | 1600–5000 cm2/V-s | clean graphene |
Thickness | 10–1000 nm | — |
Thickness | 0.1–1 mm | — |
Thickness | ≥ 400 nm | — |
insulator thin-film
gold
Au
chromium
Cr
silicon dioxide
SiO₂
silicon (p-doped or n-doped)
Si
hole mobility (claimed range, claim 20 variant) | 1600–5000 cm2/V-s | clean graphene |
Thickness | 10–1000 nm | — |
Thickness | 0.1–1 mm | — |
Thickness | ≥ 400 nm | — |
insulator thin-film
gold
Au
chromium
Cr
silicon dioxide
SiO₂
silicon (p-doped or n-doped)
Si
hole mobility (claimed range, claim 20 variant) | 1600–5000 cm2/V-s | clean graphene |
Thickness | 10–1000 nm | — |
Thickness | 0.1–1 mm | — |
Thickness | ≥ 400 nm | — |