1. A terahertz sensor, comprising: a substrate; a gate disposed on the substrate; an insulation layer disposed on the gate and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer. the graphene layer having a lower surface and an upper surface opposite from the upper surface, the lower surface of the graphene layer being in direct physical contact w ith the insulation layer, the graphene layer comprisin g a gate portion that is disposed directly over the gate, and the upper surface of the entire gate portion of the graphene layer being exposed. Currently amended

A terahertz sensor, comprising: a substrate; a plurality of gates disposed on the substrate; an insulation layer disposed on the plurality of gates and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer over each gate of the plurality of gates, the grap hene layer having a lower surface and an upper surface opposite from the upper surface, the lower surface of the graphene layer being in direct physical contact with the insulation layer. Currently amended

A terahertz sensor, comprising: a substrate; a plurality of gates disposed on the substrate; an insulation layer disposed on the plurality of gates and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer over each gate of the plurality of gates. the grap hene layer having a lower surface and an upper surface opposite from the upper surface, the graphene layer being in direct physical contact with the insulation layer, the insulation layer comprising a plurality of air gaps, each air gap of the plurality of air gaps disposed at a side of a gate of the plurality of gates, the graphene layer being in direct physical contact with the insulation layer at gate portions thereof respectively disposed directly over the gates of the plurality of gates, the graphene layer being disposed over the air gaps of the plurality of air gaps at portions of the graphen e layer that are not disposed over any gate of the plurality of gates, the graphene layer being further disposed in direct physical contact with the source terminal, either on a top surface of the source terminal or between the source terminal and the substrate, the graphene layer being further disposed in direct physical contact with the drain terminal, either on a top surface of the drain terminal or between the drain terminal and the substrate, the terahertz sensor having a quality factor (Q) of greater than 400 and a responsivit y of at least 400 Volts per Watt, and the upper surface of each entire gate portion of the graphene layer being exposed. Currently amended

1. A terahertz sensor, comprising: a substrate; a gate disposed on the substrate; an insulation layer disposed on the gate and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer. the graphene layer having a lower surface and an upper surface opposite from the upper surface, the lower surface of the graphene layer being in direct physical contact w ith the insulation layer, the graphene layer comprisin g a gate portion that is disposed directly over the gate, and the upper surface of the entire gate portion of the graphene layer being exposed. Currently amended

A terahertz sensor, comprising: a substrate; a plurality of gates disposed on the substrate; an insulation layer disposed on the plurality of gates and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer over each gate of the plurality of gates, the grap hene layer having a lower surface and an upper surface opposite from the upper surface, the lower surface of the graphene layer being in direct physical contact with the insulation layer. Currently amended

A terahertz sensor, comprising: a substrate; a plurality of gates disposed on the substrate; an insulation layer disposed on the plurality of gates and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer over each gate of the plurality of gates. the grap hene layer having a lower surface and an upper surface opposite from the upper surface, the graphene layer being in direct physical contact with the insulation layer, the insulation layer comprising a plurality of air gaps, each air gap of the plurality of air gaps disposed at a side of a gate of the plurality of gates, the graphene layer being in direct physical contact with the insulation layer at gate portions thereof respectively disposed directly over the gates of the plurality of gates, the graphene layer being disposed over the air gaps of the plurality of air gaps at portions of the graphen e layer that are not disposed over any gate of the plurality of gates, the graphene layer being further disposed in direct physical contact with the source terminal, either on a top surface of the source terminal or between the source terminal and the substrate, the graphene layer being further disposed in direct physical contact with the drain terminal, either on a top surface of the drain terminal or between the drain terminal and the substrate, the terahertz sensor having a quality factor (Q) of greater than 400 and a responsivit y of at least 400 Volts per Watt, and the upper surface of each entire gate portion of the graphene layer being exposed. Currently amended

1. A terahertz sensor, comprising: a substrate; a gate disposed on the substrate; an insulation layer disposed on the gate and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer. the graphene layer having a lower surface and an upper surface opposite from the upper surface, the lower surface of the graphene layer being in direct physical contact w ith the insulation layer, the graphene layer comprisin g a gate portion that is disposed directly over the gate, and the upper surface of the entire gate portion of the graphene layer being exposed. Currently amended

A terahertz sensor, comprising: a substrate; a plurality of gates disposed on the substrate; an insulation layer disposed on the plurality of gates and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer over each gate of the plurality of gates, the grap hene layer having a lower surface and an upper surface opposite from the upper surface, the lower surface of the graphene layer being in direct physical contact with the insulation layer. Currently amended

A terahertz sensor, comprising: a substrate; a plurality of gates disposed on the substrate; an insulation layer disposed on the plurality of gates and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer over each gate of the plurality of gates. the grap hene layer having a lower surface and an upper surface opposite from the upper surface, the graphene layer being in direct physical contact with the insulation layer, the insulation layer comprising a plurality of air gaps, each air gap of the plurality of air gaps disposed at a side of a gate of the plurality of gates, the graphene layer being in direct physical contact with the insulation layer at gate portions thereof respectively disposed directly over the gates of the plurality of gates, the graphene layer being disposed over the air gaps of the plurality of air gaps at portions of the graphen e layer that are not disposed over any gate of the plurality of gates, the graphene layer being further disposed in direct physical contact with the source terminal, either on a top surface of the source terminal or between the source terminal and the substrate, the graphene layer being further disposed in direct physical contact with the drain terminal, either on a top surface of the drain terminal or between the drain terminal and the substrate, the terahertz sensor having a quality factor (Q) of greater than 400 and a responsivit y of at least 400 Volts per Watt, and the upper surface of each entire gate portion of the graphene layer being exposed. Currently amended

1. A terahertz sensor, comprising: a substrate; a gate disposed on the substrate; an insulation layer disposed on the gate and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer. the graphene layer having a lower surface and an upper surface opposite from the upper surface, the lower surface of the graphene layer being in direct physical contact w ith the insulation layer, the graphene layer comprisin g a gate portion that is disposed directly over the gate, and the upper surface of the entire gate portion of the graphene layer being exposed. Currently amended

A terahertz sensor, comprising: a substrate; a plurality of gates disposed on the substrate; an insulation layer disposed on the plurality of gates and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer over each gate of the plurality of gates, the grap hene layer having a lower surface and an upper surface opposite from the upper surface, the lower surface of the graphene layer being in direct physical contact with the insulation layer. Currently amended

A terahertz sensor, comprising: a substrate; a plurality of gates disposed on the substrate; an insulation layer disposed on the plurality of gates and the substrate; a source terminal and a drain terminal disposed on the substrate; and a graphene layer disposed on the insulation layer over each gate of the plurality of gates. the grap hene layer having a lower surface and an upper surface opposite from the upper surface, the graphene layer being in direct physical contact with the insulation layer, the insulation layer comprising a plurality of air gaps, each air gap of the plurality of air gaps disposed at a side of a gate of the plurality of gates, the graphene layer being in direct physical contact with the insulation layer at gate portions thereof respectively disposed directly over the gates of the plurality of gates, the graphene layer being disposed over the air gaps of the plurality of air gaps at portions of the graphen e layer that are not disposed over any gate of the plurality of gates, the graphene layer being further disposed in direct physical contact with the source terminal, either on a top surface of the source terminal or between the source terminal and the substrate, the graphene layer being further disposed in direct physical contact with the drain terminal, either on a top surface of the drain terminal or between the drain terminal and the substrate, the terahertz sensor having a quality factor (Q) of greater than 400 and a responsivit y of at least 400 Volts per Watt, and the upper surface of each entire gate portion of the graphene layer being exposed. Currently amended