Patent
US 10,739,303GRAPHENE-BASED SENSOR AND METHOD OF FABRICATING SAME
Thomas SZKOPEK
US
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Patent
Atlas literature
Patent
US 10,739,303Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sensor for sensing a variable of a sample, the sensor comprising: a graphene layer supported by a substrate; a parylene layer coating the graphene layer opposite the substrate; a sensing layer coating the parylene layer opposite the substrate, and being exposable to the sample; and electrical contacts at opposite ends of the graphene layer; wherein the sensin g layer is made of one material of the g roup consistin g of: Ta 2 O and A 1 23. Currently amended
The sensor of claim 1 wherein the parylene layer has a thickness sufficient for protecting the graphene l ayer without impeding ion sensitivity of the graphene layer. Original
The sensor of claim 1 wherein the parylene layer has a thickness between 2 and 20 nm. Original
The sensor of claim 1 wherein the substrate has an insulating layer supporting the graphene layer. Original
The sensor of claim 1 further comprising a measurement circuit connected to the electrical contacts of the graphene layer. Original
The sensor of claim 1, wherein the sensing layer is configured for sensing pH of a sample in contact with said sensing layer. Original
The sensor of claim 1 wherein the sample is provided in the form of a solution, the sensor being configured for sensing an ion concentration in the solution. Original
Use of the sensor of claim 1 as an ion-sensitive field-effect transistor (ISFET) for measuring ion concentrations in the sample. Original
Canceled
A method of fabricating a sensor, the method comprising: depositing a graphene layer on a substrate; depositing electrical contacts at opposite ends of said graphene layer; depositing a parylene layer on said graphene layer, opposite said substrate, for coating said graphene layer; and depositing a sensing layer on said parylene layer, opposite said graphene layer, for coating said parylene layer, the sensin g la y er bein g made of one material of the group consistin g of: Ta 9 O S and A I 2 0 3. Currently amended
The method of claim 17 wherein said parylene layer has a thickness sufficient for protecting the graphene layer without impeding ion sensitivity of the graphene layer, said parylene layer having a thickness between 2 and 20 nm, preferably between 2 and 10 nm, and most preferably between 4 and 8 nm. Original
The method of claim 17 wherein said substrate has an insulating layer on said substrate, said depositing said graphene layer on said substrate comprising depositing said graphene layer on said insulating layer of said substrate. Original
The method of claim 17 further comprising electrically connecting said electrical contacts to a printed circuit having a sensing opening for contact with a sample, at least a portion of said sensing layer being exposed via said sensing opening of said printed circuit, the method further comprising sealing said sensing opening of said printed circuit to prevent fluid intrusion. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based ion-sensitive field-effect transistor (ISFET) sensor
graphene ISFET sensor with Ta₂O₅ sensing layer (5 nm thick)
Materials described outside the worked examples.
graphene
parylene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–20 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,739,303Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sensor for sensing a variable of a sample, the sensor comprising: a graphene layer supported by a substrate; a parylene layer coating the graphene layer opposite the substrate; a sensing layer coating the parylene layer opposite the substrate, and being exposable to the sample; and electrical contacts at opposite ends of the graphene layer; wherein the sensin g layer is made of one material of the g roup consistin g of: Ta 2 O and A 1 23. Currently amended
The sensor of claim 1 wherein the parylene layer has a thickness sufficient for protecting the graphene l ayer without impeding ion sensitivity of the graphene layer. Original
The sensor of claim 1 wherein the parylene layer has a thickness between 2 and 20 nm. Original
The sensor of claim 1 wherein the substrate has an insulating layer supporting the graphene layer. Original
The sensor of claim 1 further comprising a measurement circuit connected to the electrical contacts of the graphene layer. Original
The sensor of claim 1, wherein the sensing layer is configured for sensing pH of a sample in contact with said sensing layer. Original
The sensor of claim 1 wherein the sample is provided in the form of a solution, the sensor being configured for sensing an ion concentration in the solution. Original
Use of the sensor of claim 1 as an ion-sensitive field-effect transistor (ISFET) for measuring ion concentrations in the sample. Original
Canceled
A method of fabricating a sensor, the method comprising: depositing a graphene layer on a substrate; depositing electrical contacts at opposite ends of said graphene layer; depositing a parylene layer on said graphene layer, opposite said substrate, for coating said graphene layer; and depositing a sensing layer on said parylene layer, opposite said graphene layer, for coating said parylene layer, the sensin g la y er bein g made of one material of the group consistin g of: Ta 9 O S and A I 2 0 3. Currently amended
The method of claim 17 wherein said parylene layer has a thickness sufficient for protecting the graphene layer without impeding ion sensitivity of the graphene layer, said parylene layer having a thickness between 2 and 20 nm, preferably between 2 and 10 nm, and most preferably between 4 and 8 nm. Original
The method of claim 17 wherein said substrate has an insulating layer on said substrate, said depositing said graphene layer on said substrate comprising depositing said graphene layer on said insulating layer of said substrate. Original
The method of claim 17 further comprising electrically connecting said electrical contacts to a printed circuit having a sensing opening for contact with a sample, at least a portion of said sensing layer being exposed via said sensing opening of said printed circuit, the method further comprising sealing said sensing opening of said printed circuit to prevent fluid intrusion. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based ion-sensitive field-effect transistor (ISFET) sensor
graphene ISFET sensor with Ta₂O₅ sensing layer (5 nm thick)
Materials described outside the worked examples.
graphene
parylene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–20 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,739,303Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sensor for sensing a variable of a sample, the sensor comprising: a graphene layer supported by a substrate; a parylene layer coating the graphene layer opposite the substrate; a sensing layer coating the parylene layer opposite the substrate, and being exposable to the sample; and electrical contacts at opposite ends of the graphene layer; wherein the sensin g layer is made of one material of the g roup consistin g of: Ta 2 O and A 1 23. Currently amended
The sensor of claim 1 wherein the parylene layer has a thickness sufficient for protecting the graphene l ayer without impeding ion sensitivity of the graphene layer. Original
The sensor of claim 1 wherein the parylene layer has a thickness between 2 and 20 nm. Original
The sensor of claim 1 wherein the substrate has an insulating layer supporting the graphene layer. Original
The sensor of claim 1 further comprising a measurement circuit connected to the electrical contacts of the graphene layer. Original
The sensor of claim 1, wherein the sensing layer is configured for sensing pH of a sample in contact with said sensing layer. Original
The sensor of claim 1 wherein the sample is provided in the form of a solution, the sensor being configured for sensing an ion concentration in the solution. Original
Use of the sensor of claim 1 as an ion-sensitive field-effect transistor (ISFET) for measuring ion concentrations in the sample. Original
Canceled
A method of fabricating a sensor, the method comprising: depositing a graphene layer on a substrate; depositing electrical contacts at opposite ends of said graphene layer; depositing a parylene layer on said graphene layer, opposite said substrate, for coating said graphene layer; and depositing a sensing layer on said parylene layer, opposite said graphene layer, for coating said parylene layer, the sensin g la y er bein g made of one material of the group consistin g of: Ta 9 O S and A I 2 0 3. Currently amended
The method of claim 17 wherein said parylene layer has a thickness sufficient for protecting the graphene layer without impeding ion sensitivity of the graphene layer, said parylene layer having a thickness between 2 and 20 nm, preferably between 2 and 10 nm, and most preferably between 4 and 8 nm. Original
The method of claim 17 wherein said substrate has an insulating layer on said substrate, said depositing said graphene layer on said substrate comprising depositing said graphene layer on said insulating layer of said substrate. Original
The method of claim 17 further comprising electrically connecting said electrical contacts to a printed circuit having a sensing opening for contact with a sample, at least a portion of said sensing layer being exposed via said sensing opening of said printed circuit, the method further comprising sealing said sensing opening of said printed circuit to prevent fluid intrusion. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based ion-sensitive field-effect transistor (ISFET) sensor
graphene ISFET sensor with Ta₂O₅ sensing layer (5 nm thick)
Materials described outside the worked examples.
graphene
parylene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–20 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,739,303Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sensor for sensing a variable of a sample, the sensor comprising: a graphene layer supported by a substrate; a parylene layer coating the graphene layer opposite the substrate; a sensing layer coating the parylene layer opposite the substrate, and being exposable to the sample; and electrical contacts at opposite ends of the graphene layer; wherein the sensin g layer is made of one material of the g roup consistin g of: Ta 2 O and A 1 23. Currently amended
The sensor of claim 1 wherein the parylene layer has a thickness sufficient for protecting the graphene l ayer without impeding ion sensitivity of the graphene layer. Original
The sensor of claim 1 wherein the parylene layer has a thickness between 2 and 20 nm. Original
The sensor of claim 1 wherein the substrate has an insulating layer supporting the graphene layer. Original
The sensor of claim 1 further comprising a measurement circuit connected to the electrical contacts of the graphene layer. Original
The sensor of claim 1, wherein the sensing layer is configured for sensing pH of a sample in contact with said sensing layer. Original
The sensor of claim 1 wherein the sample is provided in the form of a solution, the sensor being configured for sensing an ion concentration in the solution. Original
Use of the sensor of claim 1 as an ion-sensitive field-effect transistor (ISFET) for measuring ion concentrations in the sample. Original
Canceled
A method of fabricating a sensor, the method comprising: depositing a graphene layer on a substrate; depositing electrical contacts at opposite ends of said graphene layer; depositing a parylene layer on said graphene layer, opposite said substrate, for coating said graphene layer; and depositing a sensing layer on said parylene layer, opposite said graphene layer, for coating said parylene layer, the sensin g la y er bein g made of one material of the group consistin g of: Ta 9 O S and A I 2 0 3. Currently amended
The method of claim 17 wherein said parylene layer has a thickness sufficient for protecting the graphene layer without impeding ion sensitivity of the graphene layer, said parylene layer having a thickness between 2 and 20 nm, preferably between 2 and 10 nm, and most preferably between 4 and 8 nm. Original
The method of claim 17 wherein said substrate has an insulating layer on said substrate, said depositing said graphene layer on said substrate comprising depositing said graphene layer on said insulating layer of said substrate. Original
The method of claim 17 further comprising electrically connecting said electrical contacts to a printed circuit having a sensing opening for contact with a sample, at least a portion of said sensing layer being exposed via said sensing opening of said printed circuit, the method further comprising sealing said sensing opening of said printed circuit to prevent fluid intrusion. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based ion-sensitive field-effect transistor (ISFET) sensor
graphene ISFET sensor with Ta₂O₅ sensing layer (5 nm thick)
Materials described outside the worked examples.
graphene
parylene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–20 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
graphene ISFET sensor with Al₂O₃ sensing layer (3 nm thick)
Ta₂O₅
Al₂O₃
hexagonal boron nitride
h-BN
Valinomycin
ETH 157
| — |
Thickness | 4–8 nm | — |
Thickness | 50–200 nm | — |
Thickness | 75–150 nm | — |
Thickness | 3–12 nm | — |
ELECTRONIC DEVICE INCLUDING GRAPHENE AND QUANTUM DOTS
graphene ISFET sensor with Al₂O₃ sensing layer (3 nm thick)
Ta₂O₅
Al₂O₃
hexagonal boron nitride
h-BN
Valinomycin
ETH 157
| — |
Thickness | 4–8 nm | — |
Thickness | 50–200 nm | — |
Thickness | 75–150 nm | — |
Thickness | 3–12 nm | — |
ELECTRONIC DEVICE INCLUDING GRAPHENE AND QUANTUM DOTS
graphene ISFET sensor with Al₂O₃ sensing layer (3 nm thick)
Ta₂O₅
Al₂O₃
hexagonal boron nitride
h-BN
Valinomycin
ETH 157
| — |
Thickness | 4–8 nm | — |
Thickness | 50–200 nm | — |
Thickness | 75–150 nm | — |
Thickness | 3–12 nm | — |
ELECTRONIC DEVICE INCLUDING GRAPHENE AND QUANTUM DOTS
graphene ISFET sensor with Al₂O₃ sensing layer (3 nm thick)
Ta₂O₅
Al₂O₃
hexagonal boron nitride
h-BN
Valinomycin
ETH 157
| — |
Thickness | 4–8 nm | — |
Thickness | 50–200 nm | — |
Thickness | 75–150 nm | — |
Thickness | 3–12 nm | — |
ELECTRONIC DEVICE INCLUDING GRAPHENE AND QUANTUM DOTS