Patent
US 8,981,345GRAPHENE NANORIBBON SENSOR
Young-Jun YU
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,981,345Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of a graphene nanoribbon sensor according to an embodiment of the inventive concept; and [0016]
FIG. 2 is a cross-sectional view taken along line I- I' of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanoribbon sensor comprising: a substrate; a graphene layer feni eddisposed on the substrate, a length of the graphene la yer extending in a first direction; a nd an upper dielectric layer disposed on the graphene layer, wherein the graphene layer has a plurality of electrode regions respectively separated in the first direction and a channel region disposed between the plurality of electrode regions, and- the channel region ha s havin g a smaller line- width than a width of each of the plurality of electrode regions, and wherein the channel region of the graphene la y er includes exposed outer sidewalls and a continuous center portion, the continuous center portion having a continuous and perfect two-dimensional bonding ring of carbon atoms.
The nanoribbon sensor of claim 1, wherein the width of the graphene la v er in the channel region is a width along a second direction that is perpendicular to the first direction, wherein the width of the graphene la y er in the channel region is greater than a thickness of the graphene la y er, and wherein the width of the graphene layer ef-in the channel region has a l ine widt-h efis less than or equal to abt 100 nm -e-ess.
The nanoribbon sensor of claim 1, further comprising a lower dielectric layer between the substrate and the graphene layer s wherein a bottom surface of the lower dielectric la y er and a top surface of the substrate are positioned on the same plane and a top surface of the lower dielectric la y er and a bottom surface of the graphene la yer are positioned on the same plane.
canceled
The nanoribbon sensor of claim [[2]]1, wherein the graphene layer comprises a single layer of carbon atoms.
The nanoribbon sensor of claim 115111, wherein the lower dielectric layer and the upper dielectric layer comprise hexagonal boron nitride.
The nanoribbon sensor of claim 115111, wherein the lower dielectric layer and the upper dielectric layer have the same width as the graphene layer.
The nanoribbon sensor of claim 7, wherein the lower dielectric layer, the graphene layer, and the upper dielectric layer having the same 1me width have a ribbon shape in the first direction.
A sensor comprising: a substrate; a lower dielectric layer disposed on the substrate and extending in a first direction; a graphene layer disposed on the lower dielectric layer and extending in the first direction, the graphene layer including first and second portions and a third portion disposed between the first and second portions, a first width of the first portion and a second width of the second portion in a second direction being greater than a third width of the third portion in the second direction, the second direction being perpendicular to the first direction; and an upper dielectric layer disposed on the graphene layer and extending in the first direction, wherein the third portion of the graphene layer includes exposed outer sidewalls and a continuous center portion, the continuous center portion of the third portion having a continuous and perfect two-dimensional bonding ring of carbon atoms.
The sensor of claim 9, wherein the first portion and the second portion of the graphene layer are a first electrode region and a second electrode region, respectively, and the third portion is a channel region of the graphene layer.
The sensor of claim 9, wherein the outer sidewalls of the third portion include a defect in a bonding ring of carbon atoms in the graphene layer.
The sensor of claim 9, wherein the third width of the third portion of the graphene layer is less than or equal to 100 nm.
The sensor of claim 9, wherein the lower dielectric layer and the upper dielectric layer have a layered structure with an atomic layer thickness.
The sensor of claim 9, wherein the lower dielectric layer, the graphene layer, and the upper dielectric layer have an I-shape in a plan view.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon sensor (claim 1 variant)
graphene nanoribbon sensor (claim 9 variant)
Materials described outside the worked examples.
graphene
C
upper dielectric layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,981,345Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of a graphene nanoribbon sensor according to an embodiment of the inventive concept; and [0016]
FIG. 2 is a cross-sectional view taken along line I- I' of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanoribbon sensor comprising: a substrate; a graphene layer feni eddisposed on the substrate, a length of the graphene la yer extending in a first direction; a nd an upper dielectric layer disposed on the graphene layer, wherein the graphene layer has a plurality of electrode regions respectively separated in the first direction and a channel region disposed between the plurality of electrode regions, and- the channel region ha s havin g a smaller line- width than a width of each of the plurality of electrode regions, and wherein the channel region of the graphene la y er includes exposed outer sidewalls and a continuous center portion, the continuous center portion having a continuous and perfect two-dimensional bonding ring of carbon atoms.
The nanoribbon sensor of claim 1, wherein the width of the graphene la v er in the channel region is a width along a second direction that is perpendicular to the first direction, wherein the width of the graphene la y er in the channel region is greater than a thickness of the graphene la y er, and wherein the width of the graphene layer ef-in the channel region has a l ine widt-h efis less than or equal to abt 100 nm -e-ess.
The nanoribbon sensor of claim 1, further comprising a lower dielectric layer between the substrate and the graphene layer s wherein a bottom surface of the lower dielectric la y er and a top surface of the substrate are positioned on the same plane and a top surface of the lower dielectric la y er and a bottom surface of the graphene la yer are positioned on the same plane.
canceled
The nanoribbon sensor of claim [[2]]1, wherein the graphene layer comprises a single layer of carbon atoms.
The nanoribbon sensor of claim 115111, wherein the lower dielectric layer and the upper dielectric layer comprise hexagonal boron nitride.
The nanoribbon sensor of claim 115111, wherein the lower dielectric layer and the upper dielectric layer have the same width as the graphene layer.
The nanoribbon sensor of claim 7, wherein the lower dielectric layer, the graphene layer, and the upper dielectric layer having the same 1me width have a ribbon shape in the first direction.
A sensor comprising: a substrate; a lower dielectric layer disposed on the substrate and extending in a first direction; a graphene layer disposed on the lower dielectric layer and extending in the first direction, the graphene layer including first and second portions and a third portion disposed between the first and second portions, a first width of the first portion and a second width of the second portion in a second direction being greater than a third width of the third portion in the second direction, the second direction being perpendicular to the first direction; and an upper dielectric layer disposed on the graphene layer and extending in the first direction, wherein the third portion of the graphene layer includes exposed outer sidewalls and a continuous center portion, the continuous center portion of the third portion having a continuous and perfect two-dimensional bonding ring of carbon atoms.
The sensor of claim 9, wherein the first portion and the second portion of the graphene layer are a first electrode region and a second electrode region, respectively, and the third portion is a channel region of the graphene layer.
The sensor of claim 9, wherein the outer sidewalls of the third portion include a defect in a bonding ring of carbon atoms in the graphene layer.
The sensor of claim 9, wherein the third width of the third portion of the graphene layer is less than or equal to 100 nm.
The sensor of claim 9, wherein the lower dielectric layer and the upper dielectric layer have a layered structure with an atomic layer thickness.
The sensor of claim 9, wherein the lower dielectric layer, the graphene layer, and the upper dielectric layer have an I-shape in a plan view.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon sensor (claim 1 variant)
graphene nanoribbon sensor (claim 9 variant)
Materials described outside the worked examples.
graphene
C
upper dielectric layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,981,345Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of a graphene nanoribbon sensor according to an embodiment of the inventive concept; and [0016]
FIG. 2 is a cross-sectional view taken along line I- I' of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanoribbon sensor comprising: a substrate; a graphene layer feni eddisposed on the substrate, a length of the graphene la yer extending in a first direction; a nd an upper dielectric layer disposed on the graphene layer, wherein the graphene layer has a plurality of electrode regions respectively separated in the first direction and a channel region disposed between the plurality of electrode regions, and- the channel region ha s havin g a smaller line- width than a width of each of the plurality of electrode regions, and wherein the channel region of the graphene la y er includes exposed outer sidewalls and a continuous center portion, the continuous center portion having a continuous and perfect two-dimensional bonding ring of carbon atoms.
The nanoribbon sensor of claim 1, wherein the width of the graphene la v er in the channel region is a width along a second direction that is perpendicular to the first direction, wherein the width of the graphene la y er in the channel region is greater than a thickness of the graphene la y er, and wherein the width of the graphene layer ef-in the channel region has a l ine widt-h efis less than or equal to abt 100 nm -e-ess.
The nanoribbon sensor of claim 1, further comprising a lower dielectric layer between the substrate and the graphene layer s wherein a bottom surface of the lower dielectric la y er and a top surface of the substrate are positioned on the same plane and a top surface of the lower dielectric la y er and a bottom surface of the graphene la yer are positioned on the same plane.
canceled
The nanoribbon sensor of claim [[2]]1, wherein the graphene layer comprises a single layer of carbon atoms.
The nanoribbon sensor of claim 115111, wherein the lower dielectric layer and the upper dielectric layer comprise hexagonal boron nitride.
The nanoribbon sensor of claim 115111, wherein the lower dielectric layer and the upper dielectric layer have the same width as the graphene layer.
The nanoribbon sensor of claim 7, wherein the lower dielectric layer, the graphene layer, and the upper dielectric layer having the same 1me width have a ribbon shape in the first direction.
A sensor comprising: a substrate; a lower dielectric layer disposed on the substrate and extending in a first direction; a graphene layer disposed on the lower dielectric layer and extending in the first direction, the graphene layer including first and second portions and a third portion disposed between the first and second portions, a first width of the first portion and a second width of the second portion in a second direction being greater than a third width of the third portion in the second direction, the second direction being perpendicular to the first direction; and an upper dielectric layer disposed on the graphene layer and extending in the first direction, wherein the third portion of the graphene layer includes exposed outer sidewalls and a continuous center portion, the continuous center portion of the third portion having a continuous and perfect two-dimensional bonding ring of carbon atoms.
The sensor of claim 9, wherein the first portion and the second portion of the graphene layer are a first electrode region and a second electrode region, respectively, and the third portion is a channel region of the graphene layer.
The sensor of claim 9, wherein the outer sidewalls of the third portion include a defect in a bonding ring of carbon atoms in the graphene layer.
The sensor of claim 9, wherein the third width of the third portion of the graphene layer is less than or equal to 100 nm.
The sensor of claim 9, wherein the lower dielectric layer and the upper dielectric layer have a layered structure with an atomic layer thickness.
The sensor of claim 9, wherein the lower dielectric layer, the graphene layer, and the upper dielectric layer have an I-shape in a plan view.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon sensor (claim 1 variant)
graphene nanoribbon sensor (claim 9 variant)
Materials described outside the worked examples.
graphene
C
upper dielectric layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,981,345Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of a graphene nanoribbon sensor according to an embodiment of the inventive concept; and [0016]
FIG. 2 is a cross-sectional view taken along line I- I' of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanoribbon sensor comprising: a substrate; a graphene layer feni eddisposed on the substrate, a length of the graphene la yer extending in a first direction; a nd an upper dielectric layer disposed on the graphene layer, wherein the graphene layer has a plurality of electrode regions respectively separated in the first direction and a channel region disposed between the plurality of electrode regions, and- the channel region ha s havin g a smaller line- width than a width of each of the plurality of electrode regions, and wherein the channel region of the graphene la y er includes exposed outer sidewalls and a continuous center portion, the continuous center portion having a continuous and perfect two-dimensional bonding ring of carbon atoms.
The nanoribbon sensor of claim 1, wherein the width of the graphene la v er in the channel region is a width along a second direction that is perpendicular to the first direction, wherein the width of the graphene la y er in the channel region is greater than a thickness of the graphene la y er, and wherein the width of the graphene layer ef-in the channel region has a l ine widt-h efis less than or equal to abt 100 nm -e-ess.
The nanoribbon sensor of claim 1, further comprising a lower dielectric layer between the substrate and the graphene layer s wherein a bottom surface of the lower dielectric la y er and a top surface of the substrate are positioned on the same plane and a top surface of the lower dielectric la y er and a bottom surface of the graphene la yer are positioned on the same plane.
canceled
The nanoribbon sensor of claim [[2]]1, wherein the graphene layer comprises a single layer of carbon atoms.
The nanoribbon sensor of claim 115111, wherein the lower dielectric layer and the upper dielectric layer comprise hexagonal boron nitride.
The nanoribbon sensor of claim 115111, wherein the lower dielectric layer and the upper dielectric layer have the same width as the graphene layer.
The nanoribbon sensor of claim 7, wherein the lower dielectric layer, the graphene layer, and the upper dielectric layer having the same 1me width have a ribbon shape in the first direction.
A sensor comprising: a substrate; a lower dielectric layer disposed on the substrate and extending in a first direction; a graphene layer disposed on the lower dielectric layer and extending in the first direction, the graphene layer including first and second portions and a third portion disposed between the first and second portions, a first width of the first portion and a second width of the second portion in a second direction being greater than a third width of the third portion in the second direction, the second direction being perpendicular to the first direction; and an upper dielectric layer disposed on the graphene layer and extending in the first direction, wherein the third portion of the graphene layer includes exposed outer sidewalls and a continuous center portion, the continuous center portion of the third portion having a continuous and perfect two-dimensional bonding ring of carbon atoms.
The sensor of claim 9, wherein the first portion and the second portion of the graphene layer are a first electrode region and a second electrode region, respectively, and the third portion is a channel region of the graphene layer.
The sensor of claim 9, wherein the outer sidewalls of the third portion include a defect in a bonding ring of carbon atoms in the graphene layer.
The sensor of claim 9, wherein the third width of the third portion of the graphene layer is less than or equal to 100 nm.
The sensor of claim 9, wherein the lower dielectric layer and the upper dielectric layer have a layered structure with an atomic layer thickness.
The sensor of claim 9, wherein the lower dielectric layer, the graphene layer, and the upper dielectric layer have an I-shape in a plan view.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanoribbon sensor (claim 1 variant)
graphene nanoribbon sensor (claim 9 variant)
Materials described outside the worked examples.
graphene
C
upper dielectric layer
Related documents with shared materials, methods, properties, or citations.
lower dielectric layer
hexagonal boron nitride
h-BN
silicon dioxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
tantalum pentoxide
Ta₂O₅
titanium oxide
TiO
silicon nitride
Si₃N₄
lower dielectric layer
hexagonal boron nitride
h-BN
silicon dioxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
tantalum pentoxide
Ta₂O₅
titanium oxide
TiO
silicon nitride
Si₃N₄
lower dielectric layer
hexagonal boron nitride
h-BN
silicon dioxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
tantalum pentoxide
Ta₂O₅
titanium oxide
TiO
silicon nitride
Si₃N₄
lower dielectric layer
hexagonal boron nitride
h-BN
silicon dioxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
tantalum pentoxide
Ta₂O₅
titanium oxide
TiO
silicon nitride
Si₃N₄