Patent
US 8,189,302MAGNETIC FIELD SENSOR WITH GRAPHENE SENSE LAYER AND FERROMAGNETIC BIASING LAYER BELOW THE SENSE LAYER
Bruce Alvin Gurney
US
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Patent
Atlas literature
Patent
US 8,189,302Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A-magnete-field An extraordinary magnetoresistance (EMR) sensor comprising: a substrate; a graphene layer on the substrate; a ferromagnetic biasing layer on the substrate between the substrate and the graphene layer and having its magnetic moment oriented generally perpendicular to the planes of the ferromagnetic biasing layer and the graphene layer; a nd an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene layer; a pair of current leads in contact with the graphene la y er for the injection and extraction of current flowing in the graphene la y er an electrically conductive shunt in contact with the graphene la v er through which current flows in the absence of an external magnetic field; a pair of voltage leads in contact with the graphene la v er for the detection of a voltage change in response to a decrease in shunted current in the presence of an external magnetic field applied generally perpendicular to the plane of the graphene layer.
The sensor of claim 1 wherein the ferromagnetic biasing layer comprises a granular Co alloy.
HSJ₉₂ 0100055US₁ Page 3 of 11 12/880,071 3. The sensor of claim 1 wherein the ferromagnetic biasing layer is a ferromagnetic multilayer comprising a plurality of like bilayers, said bilayer comprising a first film of Co, Fe or an alloy consisting essentially of Co and Fe and a second film of Pt, Pd or an alloy consisting essentially of Pt and Pd.
The sensor of claim 1 wherein the ferromagnetic biasing layer is selected from a chemically-ordered alloy selected from alloys of FePt, CoPt, FePd, CoPd, CoPt 3 and CoPd3; and a chemically-ordered L i0 or L i1 phase alloy selected from FePt-X and CoPt-X, where the element X is selected from the group consisting of Ni, Au, Cu, Pd and Ag.
The sensor of claim 1 wherein the ferromagnetic biasing layer and the electrically insulating underlayer together comprise a single layer of electrically insulating ferrite.
The sensor of claim 1 wherein the ferromagnetic biasing layer comprises a ferromagnetic layer and an antiferromagnetic layer in contact with the ferromagnetic layer, the magnetic moment of the ferromagnetic layer being perpendicularly biased by the antiferromagnetic layer.
The sensor of claim 1 wherein the graphene layer is a single atomic layer of graphene.
The sensor of claim 1 wherein the graphene layer comprises between 2 and 10 atomic layers of graphene.
The sensor of claim 1 wherein the electrically insulating underlayer comprises a layer of hexagonal boron nitride (h-BN).
The sensor of claim 1 further comprising a metallic electrostatic shield layer near the graphene layer and a second electrically insulating layer between the graphene layer and the electrostatic shield layer.
.
HSJ₉₂ 01000 55US 1 Page 5 of 11 12/880,071 15. An extraordinary magnetoresistance (EMR) sensor comprising: a substrate; a graphene layer comprising at least one atomic layer of graphene on the substrate; a ferromagnetic biasing layer on the substrate between the substrate and the graphene layer and having its magnetic moment oriented generally perpendicular to the planes of the ferromagnetic biasing layer and the graphene layer; an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene layer; an electrically conductive shunt in contact with the graphene layer; a pair of current leads in contact with the graphene layer for the injection and extraction of current flowing in the graphene layer; a pair of voltage leads in contact with the graphene layer for the detection of a voltage change in response to an external magnetic field applied generally perpendicular to the graphene layer; a metallic electrostatic shield layer for the graphene layer; and an electrically insulating overlayer on the graphene layer and between the graphene layer and the electrostatic shield layer.
The sensor of claim 15 wherein the electrically insulating underlayer comprises a layer of hexagonal boron nitride (h-BN).
HSJ₉₂ 01000 55US 1 Page 6 of 11 12/880,071 18. The sensor of claim 15 wherein the ferromagnetic biasing layer comprises a granular Co alloy.
The sensor of claim 15 wherein the ferromagnetic biasing layer is a ferromagnetic multilayer comprising a plurality of like bilayers, said bilayer comprising a first film of Co, Fe or an alloy consisting essentially of Co and Fe and a second film of Pt, Pd or an alloy consisting essentially of Pt and Pd.
The sensor of claim 15 wherein the ferromagnetic biasing layer is selected from a chemically-ordered alloy selected from alloys of FePt, CoPt, FePd, CoPd, CoPt 3 and CoPd3; and a chemically-ordered L i0 or L i1 phase alloy selected from FePt-X and CoPt-X, where the element X is selected from the group consisting of Ni, Au, Cu, Pd and Ag.
The sensor of claim 15 wherein the ferromagnetic biasing layer comprises a ferromagnetic layer and an antiferromagnetic layer in contact with the ferromagnetic layer, the magnetic moment of the ferromagnetic layer being perpendicularly biased by the antiferromagnetic layer.
The sensor of claim 15 further comprising an air-bearing slider for use in a magnetic recording disk drive, and wherein said slider comprises said substrate.
Layer stacks claimed or described, ordered top of device to substrate.
Extraordinary Magnetoresistance (EMR) sensor (claim 1)
Extraordinary Magnetoresistance (EMR) sensor with electrostatic shield (claim 15)
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
h-BN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Magnetic bias field from ferromagnetic biasing layer | — | ferromagnetic biasing layer |
Thickness | 1–10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,189,302Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A-magnete-field An extraordinary magnetoresistance (EMR) sensor comprising: a substrate; a graphene layer on the substrate; a ferromagnetic biasing layer on the substrate between the substrate and the graphene layer and having its magnetic moment oriented generally perpendicular to the planes of the ferromagnetic biasing layer and the graphene layer; a nd an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene layer; a pair of current leads in contact with the graphene la y er for the injection and extraction of current flowing in the graphene la y er an electrically conductive shunt in contact with the graphene la v er through which current flows in the absence of an external magnetic field; a pair of voltage leads in contact with the graphene la v er for the detection of a voltage change in response to a decrease in shunted current in the presence of an external magnetic field applied generally perpendicular to the plane of the graphene layer.
The sensor of claim 1 wherein the ferromagnetic biasing layer comprises a granular Co alloy.
HSJ₉₂ 0100055US₁ Page 3 of 11 12/880,071 3. The sensor of claim 1 wherein the ferromagnetic biasing layer is a ferromagnetic multilayer comprising a plurality of like bilayers, said bilayer comprising a first film of Co, Fe or an alloy consisting essentially of Co and Fe and a second film of Pt, Pd or an alloy consisting essentially of Pt and Pd.
The sensor of claim 1 wherein the ferromagnetic biasing layer is selected from a chemically-ordered alloy selected from alloys of FePt, CoPt, FePd, CoPd, CoPt 3 and CoPd3; and a chemically-ordered L i0 or L i1 phase alloy selected from FePt-X and CoPt-X, where the element X is selected from the group consisting of Ni, Au, Cu, Pd and Ag.
The sensor of claim 1 wherein the ferromagnetic biasing layer and the electrically insulating underlayer together comprise a single layer of electrically insulating ferrite.
The sensor of claim 1 wherein the ferromagnetic biasing layer comprises a ferromagnetic layer and an antiferromagnetic layer in contact with the ferromagnetic layer, the magnetic moment of the ferromagnetic layer being perpendicularly biased by the antiferromagnetic layer.
The sensor of claim 1 wherein the graphene layer is a single atomic layer of graphene.
The sensor of claim 1 wherein the graphene layer comprises between 2 and 10 atomic layers of graphene.
The sensor of claim 1 wherein the electrically insulating underlayer comprises a layer of hexagonal boron nitride (h-BN).
The sensor of claim 1 further comprising a metallic electrostatic shield layer near the graphene layer and a second electrically insulating layer between the graphene layer and the electrostatic shield layer.
.
HSJ₉₂ 01000 55US 1 Page 5 of 11 12/880,071 15. An extraordinary magnetoresistance (EMR) sensor comprising: a substrate; a graphene layer comprising at least one atomic layer of graphene on the substrate; a ferromagnetic biasing layer on the substrate between the substrate and the graphene layer and having its magnetic moment oriented generally perpendicular to the planes of the ferromagnetic biasing layer and the graphene layer; an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene layer; an electrically conductive shunt in contact with the graphene layer; a pair of current leads in contact with the graphene layer for the injection and extraction of current flowing in the graphene layer; a pair of voltage leads in contact with the graphene layer for the detection of a voltage change in response to an external magnetic field applied generally perpendicular to the graphene layer; a metallic electrostatic shield layer for the graphene layer; and an electrically insulating overlayer on the graphene layer and between the graphene layer and the electrostatic shield layer.
The sensor of claim 15 wherein the electrically insulating underlayer comprises a layer of hexagonal boron nitride (h-BN).
HSJ₉₂ 01000 55US 1 Page 6 of 11 12/880,071 18. The sensor of claim 15 wherein the ferromagnetic biasing layer comprises a granular Co alloy.
The sensor of claim 15 wherein the ferromagnetic biasing layer is a ferromagnetic multilayer comprising a plurality of like bilayers, said bilayer comprising a first film of Co, Fe or an alloy consisting essentially of Co and Fe and a second film of Pt, Pd or an alloy consisting essentially of Pt and Pd.
The sensor of claim 15 wherein the ferromagnetic biasing layer is selected from a chemically-ordered alloy selected from alloys of FePt, CoPt, FePd, CoPd, CoPt 3 and CoPd3; and a chemically-ordered L i0 or L i1 phase alloy selected from FePt-X and CoPt-X, where the element X is selected from the group consisting of Ni, Au, Cu, Pd and Ag.
The sensor of claim 15 wherein the ferromagnetic biasing layer comprises a ferromagnetic layer and an antiferromagnetic layer in contact with the ferromagnetic layer, the magnetic moment of the ferromagnetic layer being perpendicularly biased by the antiferromagnetic layer.
The sensor of claim 15 further comprising an air-bearing slider for use in a magnetic recording disk drive, and wherein said slider comprises said substrate.
Layer stacks claimed or described, ordered top of device to substrate.
Extraordinary Magnetoresistance (EMR) sensor (claim 1)
Extraordinary Magnetoresistance (EMR) sensor with electrostatic shield (claim 15)
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
h-BN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Magnetic bias field from ferromagnetic biasing layer | — | ferromagnetic biasing layer |
Thickness | 1–10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,189,302Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A-magnete-field An extraordinary magnetoresistance (EMR) sensor comprising: a substrate; a graphene layer on the substrate; a ferromagnetic biasing layer on the substrate between the substrate and the graphene layer and having its magnetic moment oriented generally perpendicular to the planes of the ferromagnetic biasing layer and the graphene layer; a nd an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene layer; a pair of current leads in contact with the graphene la y er for the injection and extraction of current flowing in the graphene la y er an electrically conductive shunt in contact with the graphene la v er through which current flows in the absence of an external magnetic field; a pair of voltage leads in contact with the graphene la v er for the detection of a voltage change in response to a decrease in shunted current in the presence of an external magnetic field applied generally perpendicular to the plane of the graphene layer.
The sensor of claim 1 wherein the ferromagnetic biasing layer comprises a granular Co alloy.
HSJ₉₂ 0100055US₁ Page 3 of 11 12/880,071 3. The sensor of claim 1 wherein the ferromagnetic biasing layer is a ferromagnetic multilayer comprising a plurality of like bilayers, said bilayer comprising a first film of Co, Fe or an alloy consisting essentially of Co and Fe and a second film of Pt, Pd or an alloy consisting essentially of Pt and Pd.
The sensor of claim 1 wherein the ferromagnetic biasing layer is selected from a chemically-ordered alloy selected from alloys of FePt, CoPt, FePd, CoPd, CoPt 3 and CoPd3; and a chemically-ordered L i0 or L i1 phase alloy selected from FePt-X and CoPt-X, where the element X is selected from the group consisting of Ni, Au, Cu, Pd and Ag.
The sensor of claim 1 wherein the ferromagnetic biasing layer and the electrically insulating underlayer together comprise a single layer of electrically insulating ferrite.
The sensor of claim 1 wherein the ferromagnetic biasing layer comprises a ferromagnetic layer and an antiferromagnetic layer in contact with the ferromagnetic layer, the magnetic moment of the ferromagnetic layer being perpendicularly biased by the antiferromagnetic layer.
The sensor of claim 1 wherein the graphene layer is a single atomic layer of graphene.
The sensor of claim 1 wherein the graphene layer comprises between 2 and 10 atomic layers of graphene.
The sensor of claim 1 wherein the electrically insulating underlayer comprises a layer of hexagonal boron nitride (h-BN).
The sensor of claim 1 further comprising a metallic electrostatic shield layer near the graphene layer and a second electrically insulating layer between the graphene layer and the electrostatic shield layer.
.
HSJ₉₂ 01000 55US 1 Page 5 of 11 12/880,071 15. An extraordinary magnetoresistance (EMR) sensor comprising: a substrate; a graphene layer comprising at least one atomic layer of graphene on the substrate; a ferromagnetic biasing layer on the substrate between the substrate and the graphene layer and having its magnetic moment oriented generally perpendicular to the planes of the ferromagnetic biasing layer and the graphene layer; an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene layer; an electrically conductive shunt in contact with the graphene layer; a pair of current leads in contact with the graphene layer for the injection and extraction of current flowing in the graphene layer; a pair of voltage leads in contact with the graphene layer for the detection of a voltage change in response to an external magnetic field applied generally perpendicular to the graphene layer; a metallic electrostatic shield layer for the graphene layer; and an electrically insulating overlayer on the graphene layer and between the graphene layer and the electrostatic shield layer.
The sensor of claim 15 wherein the electrically insulating underlayer comprises a layer of hexagonal boron nitride (h-BN).
HSJ₉₂ 01000 55US 1 Page 6 of 11 12/880,071 18. The sensor of claim 15 wherein the ferromagnetic biasing layer comprises a granular Co alloy.
The sensor of claim 15 wherein the ferromagnetic biasing layer is a ferromagnetic multilayer comprising a plurality of like bilayers, said bilayer comprising a first film of Co, Fe or an alloy consisting essentially of Co and Fe and a second film of Pt, Pd or an alloy consisting essentially of Pt and Pd.
The sensor of claim 15 wherein the ferromagnetic biasing layer is selected from a chemically-ordered alloy selected from alloys of FePt, CoPt, FePd, CoPd, CoPt 3 and CoPd3; and a chemically-ordered L i0 or L i1 phase alloy selected from FePt-X and CoPt-X, where the element X is selected from the group consisting of Ni, Au, Cu, Pd and Ag.
The sensor of claim 15 wherein the ferromagnetic biasing layer comprises a ferromagnetic layer and an antiferromagnetic layer in contact with the ferromagnetic layer, the magnetic moment of the ferromagnetic layer being perpendicularly biased by the antiferromagnetic layer.
The sensor of claim 15 further comprising an air-bearing slider for use in a magnetic recording disk drive, and wherein said slider comprises said substrate.
Layer stacks claimed or described, ordered top of device to substrate.
Extraordinary Magnetoresistance (EMR) sensor (claim 1)
Extraordinary Magnetoresistance (EMR) sensor with electrostatic shield (claim 15)
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
h-BN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Magnetic bias field from ferromagnetic biasing layer | — | ferromagnetic biasing layer |
Thickness | 1–10 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,189,302Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A-magnete-field An extraordinary magnetoresistance (EMR) sensor comprising: a substrate; a graphene layer on the substrate; a ferromagnetic biasing layer on the substrate between the substrate and the graphene layer and having its magnetic moment oriented generally perpendicular to the planes of the ferromagnetic biasing layer and the graphene layer; a nd an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene layer; a pair of current leads in contact with the graphene la y er for the injection and extraction of current flowing in the graphene la y er an electrically conductive shunt in contact with the graphene la v er through which current flows in the absence of an external magnetic field; a pair of voltage leads in contact with the graphene la v er for the detection of a voltage change in response to a decrease in shunted current in the presence of an external magnetic field applied generally perpendicular to the plane of the graphene layer.
The sensor of claim 1 wherein the ferromagnetic biasing layer comprises a granular Co alloy.
HSJ₉₂ 0100055US₁ Page 3 of 11 12/880,071 3. The sensor of claim 1 wherein the ferromagnetic biasing layer is a ferromagnetic multilayer comprising a plurality of like bilayers, said bilayer comprising a first film of Co, Fe or an alloy consisting essentially of Co and Fe and a second film of Pt, Pd or an alloy consisting essentially of Pt and Pd.
The sensor of claim 1 wherein the ferromagnetic biasing layer is selected from a chemically-ordered alloy selected from alloys of FePt, CoPt, FePd, CoPd, CoPt 3 and CoPd3; and a chemically-ordered L i0 or L i1 phase alloy selected from FePt-X and CoPt-X, where the element X is selected from the group consisting of Ni, Au, Cu, Pd and Ag.
The sensor of claim 1 wherein the ferromagnetic biasing layer and the electrically insulating underlayer together comprise a single layer of electrically insulating ferrite.
The sensor of claim 1 wherein the ferromagnetic biasing layer comprises a ferromagnetic layer and an antiferromagnetic layer in contact with the ferromagnetic layer, the magnetic moment of the ferromagnetic layer being perpendicularly biased by the antiferromagnetic layer.
The sensor of claim 1 wherein the graphene layer is a single atomic layer of graphene.
The sensor of claim 1 wherein the graphene layer comprises between 2 and 10 atomic layers of graphene.
The sensor of claim 1 wherein the electrically insulating underlayer comprises a layer of hexagonal boron nitride (h-BN).
The sensor of claim 1 further comprising a metallic electrostatic shield layer near the graphene layer and a second electrically insulating layer between the graphene layer and the electrostatic shield layer.
.
HSJ₉₂ 01000 55US 1 Page 5 of 11 12/880,071 15. An extraordinary magnetoresistance (EMR) sensor comprising: a substrate; a graphene layer comprising at least one atomic layer of graphene on the substrate; a ferromagnetic biasing layer on the substrate between the substrate and the graphene layer and having its magnetic moment oriented generally perpendicular to the planes of the ferromagnetic biasing layer and the graphene layer; an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene layer; an electrically conductive shunt in contact with the graphene layer; a pair of current leads in contact with the graphene layer for the injection and extraction of current flowing in the graphene layer; a pair of voltage leads in contact with the graphene layer for the detection of a voltage change in response to an external magnetic field applied generally perpendicular to the graphene layer; a metallic electrostatic shield layer for the graphene layer; and an electrically insulating overlayer on the graphene layer and between the graphene layer and the electrostatic shield layer.
The sensor of claim 15 wherein the electrically insulating underlayer comprises a layer of hexagonal boron nitride (h-BN).
HSJ₉₂ 01000 55US 1 Page 6 of 11 12/880,071 18. The sensor of claim 15 wherein the ferromagnetic biasing layer comprises a granular Co alloy.
The sensor of claim 15 wherein the ferromagnetic biasing layer is a ferromagnetic multilayer comprising a plurality of like bilayers, said bilayer comprising a first film of Co, Fe or an alloy consisting essentially of Co and Fe and a second film of Pt, Pd or an alloy consisting essentially of Pt and Pd.
The sensor of claim 15 wherein the ferromagnetic biasing layer is selected from a chemically-ordered alloy selected from alloys of FePt, CoPt, FePd, CoPd, CoPt 3 and CoPd3; and a chemically-ordered L i0 or L i1 phase alloy selected from FePt-X and CoPt-X, where the element X is selected from the group consisting of Ni, Au, Cu, Pd and Ag.
The sensor of claim 15 wherein the ferromagnetic biasing layer comprises a ferromagnetic layer and an antiferromagnetic layer in contact with the ferromagnetic layer, the magnetic moment of the ferromagnetic layer being perpendicularly biased by the antiferromagnetic layer.
The sensor of claim 15 further comprising an air-bearing slider for use in a magnetic recording disk drive, and wherein said slider comprises said substrate.
Layer stacks claimed or described, ordered top of device to substrate.
Extraordinary Magnetoresistance (EMR) sensor (claim 1)
Extraordinary Magnetoresistance (EMR) sensor with electrostatic shield (claim 15)
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
h-BN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Magnetic bias field from ferromagnetic biasing layer | — | ferromagnetic biasing layer |
Thickness | 1–10 nm |
Related documents with shared materials, methods, properties, or citations.
Graphene EMR sensor cross-section (described embodiment, Fig. 3)
ferromagnetic biasing layer
granular Co alloy
ferromagnetic multilayer (Co/Fe or CoFe alloy/Pt or Pd alloy bilayers)
chemically-ordered alloy (FePt, CoPt, FePd, CoPd, CoPt3, CoPd3, FePt-X, CoPt-X)
electrically insulating ferrite
antiferromagnetic/ferromagnetic bilayer
antiferromagnetic layer (cobalt oxide, nickel oxide, Co-Ni oxide, or Mn alloy with Pt/Rh/Ni/Fe/Ir/Pd)
seed layer
Ni(111) seed layer
Ni
substrate (Si, glass, or AlTiC)
electrically conductive shunt
| — |
Thickness | 1–5 nm | — |
Graphene EMR sensor cross-section (described embodiment, Fig. 3)
ferromagnetic biasing layer
granular Co alloy
ferromagnetic multilayer (Co/Fe or CoFe alloy/Pt or Pd alloy bilayers)
chemically-ordered alloy (FePt, CoPt, FePd, CoPd, CoPt3, CoPd3, FePt-X, CoPt-X)
electrically insulating ferrite
antiferromagnetic/ferromagnetic bilayer
antiferromagnetic layer (cobalt oxide, nickel oxide, Co-Ni oxide, or Mn alloy with Pt/Rh/Ni/Fe/Ir/Pd)
seed layer
Ni(111) seed layer
Ni
substrate (Si, glass, or AlTiC)
electrically conductive shunt
| — |
Thickness | 1–5 nm | — |
Graphene EMR sensor cross-section (described embodiment, Fig. 3)
ferromagnetic biasing layer
granular Co alloy
ferromagnetic multilayer (Co/Fe or CoFe alloy/Pt or Pd alloy bilayers)
chemically-ordered alloy (FePt, CoPt, FePd, CoPd, CoPt3, CoPd3, FePt-X, CoPt-X)
electrically insulating ferrite
antiferromagnetic/ferromagnetic bilayer
antiferromagnetic layer (cobalt oxide, nickel oxide, Co-Ni oxide, or Mn alloy with Pt/Rh/Ni/Fe/Ir/Pd)
seed layer
Ni(111) seed layer
Ni
substrate (Si, glass, or AlTiC)
electrically conductive shunt
| — |
Thickness | 1–5 nm | — |
Graphene EMR sensor cross-section (described embodiment, Fig. 3)
ferromagnetic biasing layer
granular Co alloy
ferromagnetic multilayer (Co/Fe or CoFe alloy/Pt or Pd alloy bilayers)
chemically-ordered alloy (FePt, CoPt, FePd, CoPd, CoPt3, CoPd3, FePt-X, CoPt-X)
electrically insulating ferrite
antiferromagnetic/ferromagnetic bilayer
antiferromagnetic layer (cobalt oxide, nickel oxide, Co-Ni oxide, or Mn alloy with Pt/Rh/Ni/Fe/Ir/Pd)
seed layer
Ni(111) seed layer
Ni
substrate (Si, glass, or AlTiC)
electrically conductive shunt
| — |
Thickness | 1–5 nm | — |