Patent
US 8,901,680GRAPHENE PRESSURE SENSORS
Jin Cai
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,901,680Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C is a side schematic view of the semiconductor nano pressure sensor device taken along line 1C-1 C in FIG. lA. FIG s. 2A and 2B schematically …
FIG. 2A, a first step comprises placing the pressure sensor device 100 in a reference ambient having a known 10 pressure Pre f, and then measuring the channel …
FIG. 3G. It is to be understood that the invention is not limited to the particular materials, features, and processing steps shown and described herein. …
FIG. 15 3D. A next step in the fabrication process is to form the sense electrodes 130, 131, 132, and 133 as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No: Y O R₉₂₀₁₁₀₄ 6 2US 1 Listing of the Claims: 1. ~ 20.
A semiconductor pressure sensor device, comprising: an insulating layer disposed on a semiconductor substrate, the insulating layer comprising a recessed cavity; a suspended graphene membrane disposed on the insulating layer completely covering the recessed cavity, wherein the suspended graphene membrane has a thickness in a range of about one atomic layer to about ten atomic layers; a first sense electrode and a second sense electrode disposed on the insulating layer on opposing sides o f, and in contact with, the suspended graphene membrane; a sealing ring that forms a seal around outer sidewalls of the first and second sense electrodes and the suspended graphene membrane; a supported graphene membrane disposed on the insulating layer in a region adjacent to the suspended graphene membrane, wherein the supported graphene membrane is ph ys ically separate from the suspended graphene membrane, and wherein an entire surface area on one side of the supported graphene membrane is in direct contact with the insulating layer wherein-ne rs; a third sense electrode and a fourth sense electrode disposed on the insulating layer on opposing sides o f, and in contact with, the supported graphene membrane; and a second sealing ring that forms a seal around outer sidewalls of the third and fourth sense electrodes and the supported graphene membrane, wherein the suspended graphene membrane is a part of the semiconductor pressure sensor device that is configured to operate as a device cell for testing pressure of an ambient gas based on a change of resistance of the suspended graphene membrane caused by pressure applied on the suspended graphene membrane by the ambient gas, and wherein the supported graphene membrane is a part of the semiconductor pressure sensor device that is configured to operate as a control cell for determining an amount of change in resistance of the suspended graphene membrane due to chemical doping of the suspended graphene membrane from the ambient gas.
The semiconductor pressure sensor device of claim 21, wherein the recessed cavity is filled with air.
The semiconductor pressure sensor device of claim 21, wherein the recessed cavity contains a vacuum.
The semiconductor pressure sensor device of claim 21, wherein the insulating layer comprises silicon nitride, silicon oxide, ha fn ium oxide, zirconium oxide, aluminum oxide, aluminum nitride, or boron nitride or a combination thereof.
The semiconductor pressure sensor device of claim 21, wherein a width of the recessed cavity between the first and second sense electrodes is in a range of about 0.2 u m to about 5.0 u m.
The semiconductor pressure sensor device of membrane has a thickness in a range of about one claim 21, wherein a depth of the recessed cavity claim 21, wherein the sealing ring comprises a seal. claim 21, wherein the supported graphene atomic layer to about ten atomic layers. 3
The semiconductor pressure sensor device of is in a range of about 20 nm to about 300 nm.
The semiconductor pressure sensor device of spin-on glass layer, a Hermetic seal, or a rubber
canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor nano pressure sensor device
Materials described outside the worked examples.
suspended graphene membrane
C
silicon nitride
Si₃N₄
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
suspended graphene membrane thickness | 1–10 atomic layers | C |
recessed cavity depth | 20–300 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,901,680Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C is a side schematic view of the semiconductor nano pressure sensor device taken along line 1C-1 C in FIG. lA. FIG s. 2A and 2B schematically …
FIG. 2A, a first step comprises placing the pressure sensor device 100 in a reference ambient having a known 10 pressure Pre f, and then measuring the channel …
FIG. 3G. It is to be understood that the invention is not limited to the particular materials, features, and processing steps shown and described herein. …
FIG. 15 3D. A next step in the fabrication process is to form the sense electrodes 130, 131, 132, and 133 as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No: Y O R₉₂₀₁₁₀₄ 6 2US 1 Listing of the Claims: 1. ~ 20.
A semiconductor pressure sensor device, comprising: an insulating layer disposed on a semiconductor substrate, the insulating layer comprising a recessed cavity; a suspended graphene membrane disposed on the insulating layer completely covering the recessed cavity, wherein the suspended graphene membrane has a thickness in a range of about one atomic layer to about ten atomic layers; a first sense electrode and a second sense electrode disposed on the insulating layer on opposing sides o f, and in contact with, the suspended graphene membrane; a sealing ring that forms a seal around outer sidewalls of the first and second sense electrodes and the suspended graphene membrane; a supported graphene membrane disposed on the insulating layer in a region adjacent to the suspended graphene membrane, wherein the supported graphene membrane is ph ys ically separate from the suspended graphene membrane, and wherein an entire surface area on one side of the supported graphene membrane is in direct contact with the insulating layer wherein-ne rs; a third sense electrode and a fourth sense electrode disposed on the insulating layer on opposing sides o f, and in contact with, the supported graphene membrane; and a second sealing ring that forms a seal around outer sidewalls of the third and fourth sense electrodes and the supported graphene membrane, wherein the suspended graphene membrane is a part of the semiconductor pressure sensor device that is configured to operate as a device cell for testing pressure of an ambient gas based on a change of resistance of the suspended graphene membrane caused by pressure applied on the suspended graphene membrane by the ambient gas, and wherein the supported graphene membrane is a part of the semiconductor pressure sensor device that is configured to operate as a control cell for determining an amount of change in resistance of the suspended graphene membrane due to chemical doping of the suspended graphene membrane from the ambient gas.
The semiconductor pressure sensor device of claim 21, wherein the recessed cavity is filled with air.
The semiconductor pressure sensor device of claim 21, wherein the recessed cavity contains a vacuum.
The semiconductor pressure sensor device of claim 21, wherein the insulating layer comprises silicon nitride, silicon oxide, ha fn ium oxide, zirconium oxide, aluminum oxide, aluminum nitride, or boron nitride or a combination thereof.
The semiconductor pressure sensor device of claim 21, wherein a width of the recessed cavity between the first and second sense electrodes is in a range of about 0.2 u m to about 5.0 u m.
The semiconductor pressure sensor device of membrane has a thickness in a range of about one claim 21, wherein a depth of the recessed cavity claim 21, wherein the sealing ring comprises a seal. claim 21, wherein the supported graphene atomic layer to about ten atomic layers. 3
The semiconductor pressure sensor device of is in a range of about 20 nm to about 300 nm.
The semiconductor pressure sensor device of spin-on glass layer, a Hermetic seal, or a rubber
canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor nano pressure sensor device
Materials described outside the worked examples.
suspended graphene membrane
C
silicon nitride
Si₃N₄
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
suspended graphene membrane thickness | 1–10 atomic layers | C |
recessed cavity depth | 20–300 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,901,680Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C is a side schematic view of the semiconductor nano pressure sensor device taken along line 1C-1 C in FIG. lA. FIG s. 2A and 2B schematically …
FIG. 2A, a first step comprises placing the pressure sensor device 100 in a reference ambient having a known 10 pressure Pre f, and then measuring the channel …
FIG. 3G. It is to be understood that the invention is not limited to the particular materials, features, and processing steps shown and described herein. …
FIG. 15 3D. A next step in the fabrication process is to form the sense electrodes 130, 131, 132, and 133 as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No: Y O R₉₂₀₁₁₀₄ 6 2US 1 Listing of the Claims: 1. ~ 20.
A semiconductor pressure sensor device, comprising: an insulating layer disposed on a semiconductor substrate, the insulating layer comprising a recessed cavity; a suspended graphene membrane disposed on the insulating layer completely covering the recessed cavity, wherein the suspended graphene membrane has a thickness in a range of about one atomic layer to about ten atomic layers; a first sense electrode and a second sense electrode disposed on the insulating layer on opposing sides o f, and in contact with, the suspended graphene membrane; a sealing ring that forms a seal around outer sidewalls of the first and second sense electrodes and the suspended graphene membrane; a supported graphene membrane disposed on the insulating layer in a region adjacent to the suspended graphene membrane, wherein the supported graphene membrane is ph ys ically separate from the suspended graphene membrane, and wherein an entire surface area on one side of the supported graphene membrane is in direct contact with the insulating layer wherein-ne rs; a third sense electrode and a fourth sense electrode disposed on the insulating layer on opposing sides o f, and in contact with, the supported graphene membrane; and a second sealing ring that forms a seal around outer sidewalls of the third and fourth sense electrodes and the supported graphene membrane, wherein the suspended graphene membrane is a part of the semiconductor pressure sensor device that is configured to operate as a device cell for testing pressure of an ambient gas based on a change of resistance of the suspended graphene membrane caused by pressure applied on the suspended graphene membrane by the ambient gas, and wherein the supported graphene membrane is a part of the semiconductor pressure sensor device that is configured to operate as a control cell for determining an amount of change in resistance of the suspended graphene membrane due to chemical doping of the suspended graphene membrane from the ambient gas.
The semiconductor pressure sensor device of claim 21, wherein the recessed cavity is filled with air.
The semiconductor pressure sensor device of claim 21, wherein the recessed cavity contains a vacuum.
The semiconductor pressure sensor device of claim 21, wherein the insulating layer comprises silicon nitride, silicon oxide, ha fn ium oxide, zirconium oxide, aluminum oxide, aluminum nitride, or boron nitride or a combination thereof.
The semiconductor pressure sensor device of claim 21, wherein a width of the recessed cavity between the first and second sense electrodes is in a range of about 0.2 u m to about 5.0 u m.
The semiconductor pressure sensor device of membrane has a thickness in a range of about one claim 21, wherein a depth of the recessed cavity claim 21, wherein the sealing ring comprises a seal. claim 21, wherein the supported graphene atomic layer to about ten atomic layers. 3
The semiconductor pressure sensor device of is in a range of about 20 nm to about 300 nm.
The semiconductor pressure sensor device of spin-on glass layer, a Hermetic seal, or a rubber
canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor nano pressure sensor device
Materials described outside the worked examples.
suspended graphene membrane
C
silicon nitride
Si₃N₄
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
suspended graphene membrane thickness | 1–10 atomic layers | C |
recessed cavity depth | 20–300 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,901,680Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C is a side schematic view of the semiconductor nano pressure sensor device taken along line 1C-1 C in FIG. lA. FIG s. 2A and 2B schematically …
FIG. 2A, a first step comprises placing the pressure sensor device 100 in a reference ambient having a known 10 pressure Pre f, and then measuring the channel …
FIG. 3G. It is to be understood that the invention is not limited to the particular materials, features, and processing steps shown and described herein. …
FIG. 15 3D. A next step in the fabrication process is to form the sense electrodes 130, 131, 132, and 133 as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No: Y O R₉₂₀₁₁₀₄ 6 2US 1 Listing of the Claims: 1. ~ 20.
A semiconductor pressure sensor device, comprising: an insulating layer disposed on a semiconductor substrate, the insulating layer comprising a recessed cavity; a suspended graphene membrane disposed on the insulating layer completely covering the recessed cavity, wherein the suspended graphene membrane has a thickness in a range of about one atomic layer to about ten atomic layers; a first sense electrode and a second sense electrode disposed on the insulating layer on opposing sides o f, and in contact with, the suspended graphene membrane; a sealing ring that forms a seal around outer sidewalls of the first and second sense electrodes and the suspended graphene membrane; a supported graphene membrane disposed on the insulating layer in a region adjacent to the suspended graphene membrane, wherein the supported graphene membrane is ph ys ically separate from the suspended graphene membrane, and wherein an entire surface area on one side of the supported graphene membrane is in direct contact with the insulating layer wherein-ne rs; a third sense electrode and a fourth sense electrode disposed on the insulating layer on opposing sides o f, and in contact with, the supported graphene membrane; and a second sealing ring that forms a seal around outer sidewalls of the third and fourth sense electrodes and the supported graphene membrane, wherein the suspended graphene membrane is a part of the semiconductor pressure sensor device that is configured to operate as a device cell for testing pressure of an ambient gas based on a change of resistance of the suspended graphene membrane caused by pressure applied on the suspended graphene membrane by the ambient gas, and wherein the supported graphene membrane is a part of the semiconductor pressure sensor device that is configured to operate as a control cell for determining an amount of change in resistance of the suspended graphene membrane due to chemical doping of the suspended graphene membrane from the ambient gas.
The semiconductor pressure sensor device of claim 21, wherein the recessed cavity is filled with air.
The semiconductor pressure sensor device of claim 21, wherein the recessed cavity contains a vacuum.
The semiconductor pressure sensor device of claim 21, wherein the insulating layer comprises silicon nitride, silicon oxide, ha fn ium oxide, zirconium oxide, aluminum oxide, aluminum nitride, or boron nitride or a combination thereof.
The semiconductor pressure sensor device of claim 21, wherein a width of the recessed cavity between the first and second sense electrodes is in a range of about 0.2 u m to about 5.0 u m.
The semiconductor pressure sensor device of membrane has a thickness in a range of about one claim 21, wherein a depth of the recessed cavity claim 21, wherein the sealing ring comprises a seal. claim 21, wherein the supported graphene atomic layer to about ten atomic layers. 3
The semiconductor pressure sensor device of is in a range of about 20 nm to about 300 nm.
The semiconductor pressure sensor device of spin-on glass layer, a Hermetic seal, or a rubber
canceled
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor nano pressure sensor device
Materials described outside the worked examples.
suspended graphene membrane
C
silicon nitride
Si₃N₄
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
suspended graphene membrane thickness | 1–10 atomic layers | C |
recessed cavity depth | 20–300 nm | — |
Related documents with shared materials, methods, properties, or citations.
silicon oxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
aluminum oxide
Al₂O₃
aluminum nitride
AlN
boron nitride
BN
recessed cavity width (between sense electrodes) | 0.2–5 um | — |
Thickness | 2–5 um | — |
Thickness | 20–500 nm | — |
Thickness | 20–30 nm | — |
silicon oxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
aluminum oxide
Al₂O₃
aluminum nitride
AlN
boron nitride
BN
recessed cavity width (between sense electrodes) | 0.2–5 um | — |
Thickness | 2–5 um | — |
Thickness | 20–500 nm | — |
Thickness | 20–30 nm | — |
silicon oxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
aluminum oxide
Al₂O₃
aluminum nitride
AlN
boron nitride
BN
recessed cavity width (between sense electrodes) | 0.2–5 um | — |
Thickness | 2–5 um | — |
Thickness | 20–500 nm | — |
Thickness | 20–30 nm | — |
silicon oxide
SiO₂
hafnium oxide
HfO₂
zirconium oxide
ZrO₂
aluminum oxide
Al₂O₃
aluminum nitride
AlN
boron nitride
BN
recessed cavity width (between sense electrodes) | 0.2–5 um | — |
Thickness | 2–5 um | — |
Thickness | 20–500 nm | — |
Thickness | 20–30 nm | — |