Patent
US 8,648,342WAVEGUIDE-INTEGRATED GRAPHENE PHOTODETECTORS
Taek KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,648,342Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view schematically illustrating a photodetector according to an example embodiment; [0033]
FIG. 2 is a cross-sectional view taken along line I l-Il ' of
FIG. 3 is a cross-sectional view taken along line I II-III ' of
FIG. 4 is a plan view of a modified example of the photodetector 100 of
FIG. 5 is a cross-sectional view of another example embodiment of the photodetector of
FIG. 6 is a perspective view schematically illustrating a photodetector according to another example embodiment; [0038]
FIG. 7 is a cross-sectional view taken along line VII-VII' of
FIG. 8 is a cross-sectional view taken along line VIII-VIII' of
FIG. 9 is a diagram showing the intensity of light at a photodetection portion when a voltage is applied to the photodetector of
FIG. 10 is a perspective view schematically illustrating a photodetector according to another example embodiment; [0042]
FIG. 11 is a cross-sectional view taken along line XI-XI' of
FIG. 12 is a cross-sectional view taken along line XII-XII' of
FIG. 13 is a diagram showing the intensity of light at a photodetection portion when a voltage is applied to the photodetector of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a waveguide on a substrate; and a photodetection portion configured to receive light incident on the waveguide, the photodetection portion including, a first semiconductor layer contacting the waveguide, graphene on the first semiconductor layer, and a second semiconductor layer on the graphene.
The photodetector of claim 1, wherein the photodetection portion is connected to the waveguide, the first semiconductor layer has a first ridge portion extending from a lower portion of the waveguide, the graphene is formed on at least an upper surface of the first ridge portion, the second semiconductor layer includes a second ridge portion formed on the graphene, the second ridge portion contacting an upper portion of the waveguide, and wherein the photodetector further includes, a first electrode and a second electrode separated from the first ridge portion and electrically connected to the graphene.
The photodetector of claim 1, wherein the first and second semiconductor layers are formed of at least one of silicon (Si), germanium (Ge), silicon- germanium, a Group I II -V semiconductor, and a Group I I -VI semiconductor.
The photodetector of claim 1, further comprising: a first insulation layer between the first semiconductor layer and the graphene.
The photodetector of claim 1, wherein the graphene is at about a center portion of a surface of the photodetection portion.
The photodetector of claim 1, wherein the graphene includes a plurality of graphene layers.
The photodetector of claim 1, wherein the first semiconductor layer is an epitaxially grown silicon l ayer and the second semiconductor layer is a polysilicon layer.
The photodetector of claim 1, wherein the waveguide and the photodetection portion have corresponding rectangular vertical sections.
The photodetector of claim 1, wherein the photodetection portion is connected to the waveguide, the first semiconductor layer includes a first ridge portion extended from the waveguide, the second semiconductor layer includes a second ridge portion, the graphene is provided between the first and second ridge portions, and the photodetection portion further includes, a first electrode and a second electrode separated from the first ridge portion and electrically connected to the graphene.
Layer stacks claimed or described, ordered top of device to substrate.
waveguide-integrated graphene photodetector
Materials described outside the worked examples.
graphene
first and second semiconductor layers
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 50 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,648,342Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view schematically illustrating a photodetector according to an example embodiment; [0033]
FIG. 2 is a cross-sectional view taken along line I l-Il ' of
FIG. 3 is a cross-sectional view taken along line I II-III ' of
FIG. 4 is a plan view of a modified example of the photodetector 100 of
FIG. 5 is a cross-sectional view of another example embodiment of the photodetector of
FIG. 6 is a perspective view schematically illustrating a photodetector according to another example embodiment; [0038]
FIG. 7 is a cross-sectional view taken along line VII-VII' of
FIG. 8 is a cross-sectional view taken along line VIII-VIII' of
FIG. 9 is a diagram showing the intensity of light at a photodetection portion when a voltage is applied to the photodetector of
FIG. 10 is a perspective view schematically illustrating a photodetector according to another example embodiment; [0042]
FIG. 11 is a cross-sectional view taken along line XI-XI' of
FIG. 12 is a cross-sectional view taken along line XII-XII' of
FIG. 13 is a diagram showing the intensity of light at a photodetection portion when a voltage is applied to the photodetector of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a waveguide on a substrate; and a photodetection portion configured to receive light incident on the waveguide, the photodetection portion including, a first semiconductor layer contacting the waveguide, graphene on the first semiconductor layer, and a second semiconductor layer on the graphene.
The photodetector of claim 1, wherein the photodetection portion is connected to the waveguide, the first semiconductor layer has a first ridge portion extending from a lower portion of the waveguide, the graphene is formed on at least an upper surface of the first ridge portion, the second semiconductor layer includes a second ridge portion formed on the graphene, the second ridge portion contacting an upper portion of the waveguide, and wherein the photodetector further includes, a first electrode and a second electrode separated from the first ridge portion and electrically connected to the graphene.
The photodetector of claim 1, wherein the first and second semiconductor layers are formed of at least one of silicon (Si), germanium (Ge), silicon- germanium, a Group I II -V semiconductor, and a Group I I -VI semiconductor.
The photodetector of claim 1, further comprising: a first insulation layer between the first semiconductor layer and the graphene.
The photodetector of claim 1, wherein the graphene is at about a center portion of a surface of the photodetection portion.
The photodetector of claim 1, wherein the graphene includes a plurality of graphene layers.
The photodetector of claim 1, wherein the first semiconductor layer is an epitaxially grown silicon l ayer and the second semiconductor layer is a polysilicon layer.
The photodetector of claim 1, wherein the waveguide and the photodetection portion have corresponding rectangular vertical sections.
The photodetector of claim 1, wherein the photodetection portion is connected to the waveguide, the first semiconductor layer includes a first ridge portion extended from the waveguide, the second semiconductor layer includes a second ridge portion, the graphene is provided between the first and second ridge portions, and the photodetection portion further includes, a first electrode and a second electrode separated from the first ridge portion and electrically connected to the graphene.
Layer stacks claimed or described, ordered top of device to substrate.
waveguide-integrated graphene photodetector
Materials described outside the worked examples.
graphene
first and second semiconductor layers
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 50 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,648,342Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view schematically illustrating a photodetector according to an example embodiment; [0033]
FIG. 2 is a cross-sectional view taken along line I l-Il ' of
FIG. 3 is a cross-sectional view taken along line I II-III ' of
FIG. 4 is a plan view of a modified example of the photodetector 100 of
FIG. 5 is a cross-sectional view of another example embodiment of the photodetector of
FIG. 6 is a perspective view schematically illustrating a photodetector according to another example embodiment; [0038]
FIG. 7 is a cross-sectional view taken along line VII-VII' of
FIG. 8 is a cross-sectional view taken along line VIII-VIII' of
FIG. 9 is a diagram showing the intensity of light at a photodetection portion when a voltage is applied to the photodetector of
FIG. 10 is a perspective view schematically illustrating a photodetector according to another example embodiment; [0042]
FIG. 11 is a cross-sectional view taken along line XI-XI' of
FIG. 12 is a cross-sectional view taken along line XII-XII' of
FIG. 13 is a diagram showing the intensity of light at a photodetection portion when a voltage is applied to the photodetector of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a waveguide on a substrate; and a photodetection portion configured to receive light incident on the waveguide, the photodetection portion including, a first semiconductor layer contacting the waveguide, graphene on the first semiconductor layer, and a second semiconductor layer on the graphene.
The photodetector of claim 1, wherein the photodetection portion is connected to the waveguide, the first semiconductor layer has a first ridge portion extending from a lower portion of the waveguide, the graphene is formed on at least an upper surface of the first ridge portion, the second semiconductor layer includes a second ridge portion formed on the graphene, the second ridge portion contacting an upper portion of the waveguide, and wherein the photodetector further includes, a first electrode and a second electrode separated from the first ridge portion and electrically connected to the graphene.
The photodetector of claim 1, wherein the first and second semiconductor layers are formed of at least one of silicon (Si), germanium (Ge), silicon- germanium, a Group I II -V semiconductor, and a Group I I -VI semiconductor.
The photodetector of claim 1, further comprising: a first insulation layer between the first semiconductor layer and the graphene.
The photodetector of claim 1, wherein the graphene is at about a center portion of a surface of the photodetection portion.
The photodetector of claim 1, wherein the graphene includes a plurality of graphene layers.
The photodetector of claim 1, wherein the first semiconductor layer is an epitaxially grown silicon l ayer and the second semiconductor layer is a polysilicon layer.
The photodetector of claim 1, wherein the waveguide and the photodetection portion have corresponding rectangular vertical sections.
The photodetector of claim 1, wherein the photodetection portion is connected to the waveguide, the first semiconductor layer includes a first ridge portion extended from the waveguide, the second semiconductor layer includes a second ridge portion, the graphene is provided between the first and second ridge portions, and the photodetection portion further includes, a first electrode and a second electrode separated from the first ridge portion and electrically connected to the graphene.
Layer stacks claimed or described, ordered top of device to substrate.
waveguide-integrated graphene photodetector
Materials described outside the worked examples.
graphene
first and second semiconductor layers
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 50 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,648,342Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view schematically illustrating a photodetector according to an example embodiment; [0033]
FIG. 2 is a cross-sectional view taken along line I l-Il ' of
FIG. 3 is a cross-sectional view taken along line I II-III ' of
FIG. 4 is a plan view of a modified example of the photodetector 100 of
FIG. 5 is a cross-sectional view of another example embodiment of the photodetector of
FIG. 6 is a perspective view schematically illustrating a photodetector according to another example embodiment; [0038]
FIG. 7 is a cross-sectional view taken along line VII-VII' of
FIG. 8 is a cross-sectional view taken along line VIII-VIII' of
FIG. 9 is a diagram showing the intensity of light at a photodetection portion when a voltage is applied to the photodetector of
FIG. 10 is a perspective view schematically illustrating a photodetector according to another example embodiment; [0042]
FIG. 11 is a cross-sectional view taken along line XI-XI' of
FIG. 12 is a cross-sectional view taken along line XII-XII' of
FIG. 13 is a diagram showing the intensity of light at a photodetection portion when a voltage is applied to the photodetector of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photodetector comprising: a waveguide on a substrate; and a photodetection portion configured to receive light incident on the waveguide, the photodetection portion including, a first semiconductor layer contacting the waveguide, graphene on the first semiconductor layer, and a second semiconductor layer on the graphene.
The photodetector of claim 1, wherein the photodetection portion is connected to the waveguide, the first semiconductor layer has a first ridge portion extending from a lower portion of the waveguide, the graphene is formed on at least an upper surface of the first ridge portion, the second semiconductor layer includes a second ridge portion formed on the graphene, the second ridge portion contacting an upper portion of the waveguide, and wherein the photodetector further includes, a first electrode and a second electrode separated from the first ridge portion and electrically connected to the graphene.
The photodetector of claim 1, wherein the first and second semiconductor layers are formed of at least one of silicon (Si), germanium (Ge), silicon- germanium, a Group I II -V semiconductor, and a Group I I -VI semiconductor.
The photodetector of claim 1, further comprising: a first insulation layer between the first semiconductor layer and the graphene.
The photodetector of claim 1, wherein the graphene is at about a center portion of a surface of the photodetection portion.
The photodetector of claim 1, wherein the graphene includes a plurality of graphene layers.
The photodetector of claim 1, wherein the first semiconductor layer is an epitaxially grown silicon l ayer and the second semiconductor layer is a polysilicon layer.
The photodetector of claim 1, wherein the waveguide and the photodetection portion have corresponding rectangular vertical sections.
The photodetector of claim 1, wherein the photodetection portion is connected to the waveguide, the first semiconductor layer includes a first ridge portion extended from the waveguide, the second semiconductor layer includes a second ridge portion, the graphene is provided between the first and second ridge portions, and the photodetection portion further includes, a first electrode and a second electrode separated from the first ridge portion and electrically connected to the graphene.
Layer stacks claimed or described, ordered top of device to substrate.
waveguide-integrated graphene photodetector
Materials described outside the worked examples.
graphene
first and second semiconductor layers
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 50 nm | — |
Related documents with shared materials, methods, properties, or citations.
insulation layer
silicon
Si
germanium
Ge
silicon-germanium
SiGe
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
boron nitride
BN
hexagonal boron nitride
h-BN
insulation layer
silicon
Si
germanium
Ge
silicon-germanium
SiGe
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
boron nitride
BN
hexagonal boron nitride
h-BN
insulation layer
silicon
Si
germanium
Ge
silicon-germanium
SiGe
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
boron nitride
BN
hexagonal boron nitride
h-BN
insulation layer
silicon
Si
germanium
Ge
silicon-germanium
SiGe
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
boron nitride
BN
hexagonal boron nitride
h-BN