Patent
US 9,202,945Apparatus comprising graphene-based tunnelling diode for photodetection
Alan COLLI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,202,945Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 35 6 A description is now given, by way of example only, with reference to the accompanying drawings, in which:-
Figure 1 a shows a conventional MIM diode without an applied potential; SVG 13336589.12-23-2011.GWJN₅WTHPXXIFW3.SPEC28045696.11.402.769.2474.815.svg 0.153 6.907 Drawing Black and white Figure 2a shows a conventional MIM diode with an applied potential; Figure 2b shows an energy band diagram for …
Figure 4 shows a rectenna comprising the present apparatus;
Figure 5 shows a photodetector comprising the present apparatus; Figure 6a shows photon-induced electron transitions within a metal; Figure 6b shows photon-induced electron transitions within graphene; 15
Figure 7 shows how the tunnelling current varies with applied voltage for the present apparatus;
Figure 8 shows a device comprising the present apparatus as well as one form of the present apparatus when the present apparatus is considered to be a particular device;
Figure 9 shows a method of making the present apparatus; 20
Figure 10 shows a method of using the present apparatus; and
Figure 11 shows a computer readable medium comprising a computer program for controlling the making and/or use of the present apparatus. Description of Specific Aspects/Embodiments 25 Diodes are circuit elements that allow a flow of electricity in one direction but not in the opposite direction. They …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(C urrently Amended) An apparatus comprising first and second layers of electrically conductive material separated by a layer of electrically insulating material, wherein one or both layers of electrically conductive material comprise graphene configured to be exposed to electromagnetic radiation, and wherein the apparatus is configured s uch that electrons are able to tunnel from the first layer of electrically conductive material through the layer of electrically insulating material to the second layer of electrically conductive material via a Quantum mechanical tunneling mechanism, wherein the apparatus is a diode, and wherein the apparatus forms part of a photodetector.
The apparatus of claim 1, wherein the first layer of electrically conductive material comprises graphene, and the second layer of electrically conductive material comprises one or mo r e of C i, Au, Al, Ni, Cu, Pt, W, and indium tin oxide or an alloy comprising one or more of the same.
(O riginal) The apparatus of claim 1, wherein one or more of the first layer of electrically conductive material, the second layer of electrically conductive material and the layer of electrically i nsulating material are optically transparent.
(O riginal) The apparatus of claim 1, wherein the apparatus is formed on a supporting substrate, and wherein the supporting substrate is electrically insulating and/or optically transparent.
(Original) The apparatus of claim 1, wherein the layer of electrically insulating material comprises o n e or more of A₁ 203, Hf 0 2,- B N and diamond-like carbon.
8. The apparatus of claim 1, wherein the second layer of electrically conductive material comprises one or more nanopi l lars. 3 PAGE 318' RCVD AT 312712015 10:12:09 AM [Easte m Daylight Time]SVR:W- PTOFAX.OOil DNIS:2 7 383 00' CSID:2 0 39440245 ' DURAT ION (mm-ss): 01-12 MAR. 2 7. 2015 10:32AM HARRIN G TON & SMITH N O. 918 P. 4 Serial N o.: 13/336,589 Reply to Office Action of
(O riginal) The apparatus of claim 1, wherein the apparatus comprises a pass ivati o n layer on top of the first or second layer of electrically conductive material.
The apparatus of.claim 1, wherein the electrons are hot electrons generated when the first layer of electrically conductive material is illuminated by electromagnetic radiation.
The apparatus of claim 1, wherein the apparatus is a diode.
(C ancelled) canceled
The apparatus of claim. 1, wherein one or bo th of the first and second layers of electrically conductive material are made solely from graphene. 2 PAGE T₁₈ RCV D AT 3 1 12015 10:12: 0 9 A M₁ [Easte rn Daylight Tie SV R:W * PTOFAX 4O01!lP DNIS:2 7 383 0 CSID:203944024 5' DURATION (min~ss):01.12 MAR. 27. 2 0 15 1 0:32AM HARRING T ON & SM I TH N 0. 918 P. 3 SVG 13336589.03-27-2015.I₇YXWCQKPXXIFW4.CLM.2.1.251.92.404.113.svg 0.07 0.51 Chemistry Black and white Serial No.: 13/33 6,589 Reply to Office Action of January 5, 201
10 -11. canceled
canceled
canceled
15-20. canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based tunnelling diode photodetector
Materials described outside the worked examples.
graphene
electrically insulating layer
Al₂O₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–10 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,202,945Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 35 6 A description is now given, by way of example only, with reference to the accompanying drawings, in which:-
Figure 1 a shows a conventional MIM diode without an applied potential; SVG 13336589.12-23-2011.GWJN₅WTHPXXIFW3.SPEC28045696.11.402.769.2474.815.svg 0.153 6.907 Drawing Black and white Figure 2a shows a conventional MIM diode with an applied potential; Figure 2b shows an energy band diagram for …
Figure 4 shows a rectenna comprising the present apparatus;
Figure 5 shows a photodetector comprising the present apparatus; Figure 6a shows photon-induced electron transitions within a metal; Figure 6b shows photon-induced electron transitions within graphene; 15
Figure 7 shows how the tunnelling current varies with applied voltage for the present apparatus;
Figure 8 shows a device comprising the present apparatus as well as one form of the present apparatus when the present apparatus is considered to be a particular device;
Figure 9 shows a method of making the present apparatus; 20
Figure 10 shows a method of using the present apparatus; and
Figure 11 shows a computer readable medium comprising a computer program for controlling the making and/or use of the present apparatus. Description of Specific Aspects/Embodiments 25 Diodes are circuit elements that allow a flow of electricity in one direction but not in the opposite direction. They …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(C urrently Amended) An apparatus comprising first and second layers of electrically conductive material separated by a layer of electrically insulating material, wherein one or both layers of electrically conductive material comprise graphene configured to be exposed to electromagnetic radiation, and wherein the apparatus is configured s uch that electrons are able to tunnel from the first layer of electrically conductive material through the layer of electrically insulating material to the second layer of electrically conductive material via a Quantum mechanical tunneling mechanism, wherein the apparatus is a diode, and wherein the apparatus forms part of a photodetector.
The apparatus of claim 1, wherein the first layer of electrically conductive material comprises graphene, and the second layer of electrically conductive material comprises one or mo r e of C i, Au, Al, Ni, Cu, Pt, W, and indium tin oxide or an alloy comprising one or more of the same.
(O riginal) The apparatus of claim 1, wherein one or more of the first layer of electrically conductive material, the second layer of electrically conductive material and the layer of electrically i nsulating material are optically transparent.
(O riginal) The apparatus of claim 1, wherein the apparatus is formed on a supporting substrate, and wherein the supporting substrate is electrically insulating and/or optically transparent.
(Original) The apparatus of claim 1, wherein the layer of electrically insulating material comprises o n e or more of A₁ 203, Hf 0 2,- B N and diamond-like carbon.
8. The apparatus of claim 1, wherein the second layer of electrically conductive material comprises one or more nanopi l lars. 3 PAGE 318' RCVD AT 312712015 10:12:09 AM [Easte m Daylight Time]SVR:W- PTOFAX.OOil DNIS:2 7 383 00' CSID:2 0 39440245 ' DURAT ION (mm-ss): 01-12 MAR. 2 7. 2015 10:32AM HARRIN G TON & SMITH N O. 918 P. 4 Serial N o.: 13/336,589 Reply to Office Action of
(O riginal) The apparatus of claim 1, wherein the apparatus comprises a pass ivati o n layer on top of the first or second layer of electrically conductive material.
The apparatus of.claim 1, wherein the electrons are hot electrons generated when the first layer of electrically conductive material is illuminated by electromagnetic radiation.
The apparatus of claim 1, wherein the apparatus is a diode.
(C ancelled) canceled
The apparatus of claim. 1, wherein one or bo th of the first and second layers of electrically conductive material are made solely from graphene. 2 PAGE T₁₈ RCV D AT 3 1 12015 10:12: 0 9 A M₁ [Easte rn Daylight Tie SV R:W * PTOFAX 4O01!lP DNIS:2 7 383 0 CSID:203944024 5' DURATION (min~ss):01.12 MAR. 27. 2 0 15 1 0:32AM HARRING T ON & SM I TH N 0. 918 P. 3 SVG 13336589.03-27-2015.I₇YXWCQKPXXIFW4.CLM.2.1.251.92.404.113.svg 0.07 0.51 Chemistry Black and white Serial No.: 13/33 6,589 Reply to Office Action of January 5, 201
10 -11. canceled
canceled
canceled
15-20. canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based tunnelling diode photodetector
Materials described outside the worked examples.
graphene
electrically insulating layer
Al₂O₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–10 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,202,945Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 35 6 A description is now given, by way of example only, with reference to the accompanying drawings, in which:-
Figure 1 a shows a conventional MIM diode without an applied potential; SVG 13336589.12-23-2011.GWJN₅WTHPXXIFW3.SPEC28045696.11.402.769.2474.815.svg 0.153 6.907 Drawing Black and white Figure 2a shows a conventional MIM diode with an applied potential; Figure 2b shows an energy band diagram for …
Figure 4 shows a rectenna comprising the present apparatus;
Figure 5 shows a photodetector comprising the present apparatus; Figure 6a shows photon-induced electron transitions within a metal; Figure 6b shows photon-induced electron transitions within graphene; 15
Figure 7 shows how the tunnelling current varies with applied voltage for the present apparatus;
Figure 8 shows a device comprising the present apparatus as well as one form of the present apparatus when the present apparatus is considered to be a particular device;
Figure 9 shows a method of making the present apparatus; 20
Figure 10 shows a method of using the present apparatus; and
Figure 11 shows a computer readable medium comprising a computer program for controlling the making and/or use of the present apparatus. Description of Specific Aspects/Embodiments 25 Diodes are circuit elements that allow a flow of electricity in one direction but not in the opposite direction. They …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(C urrently Amended) An apparatus comprising first and second layers of electrically conductive material separated by a layer of electrically insulating material, wherein one or both layers of electrically conductive material comprise graphene configured to be exposed to electromagnetic radiation, and wherein the apparatus is configured s uch that electrons are able to tunnel from the first layer of electrically conductive material through the layer of electrically insulating material to the second layer of electrically conductive material via a Quantum mechanical tunneling mechanism, wherein the apparatus is a diode, and wherein the apparatus forms part of a photodetector.
The apparatus of claim 1, wherein the first layer of electrically conductive material comprises graphene, and the second layer of electrically conductive material comprises one or mo r e of C i, Au, Al, Ni, Cu, Pt, W, and indium tin oxide or an alloy comprising one or more of the same.
(O riginal) The apparatus of claim 1, wherein one or more of the first layer of electrically conductive material, the second layer of electrically conductive material and the layer of electrically i nsulating material are optically transparent.
(O riginal) The apparatus of claim 1, wherein the apparatus is formed on a supporting substrate, and wherein the supporting substrate is electrically insulating and/or optically transparent.
(Original) The apparatus of claim 1, wherein the layer of electrically insulating material comprises o n e or more of A₁ 203, Hf 0 2,- B N and diamond-like carbon.
8. The apparatus of claim 1, wherein the second layer of electrically conductive material comprises one or more nanopi l lars. 3 PAGE 318' RCVD AT 312712015 10:12:09 AM [Easte m Daylight Time]SVR:W- PTOFAX.OOil DNIS:2 7 383 00' CSID:2 0 39440245 ' DURAT ION (mm-ss): 01-12 MAR. 2 7. 2015 10:32AM HARRIN G TON & SMITH N O. 918 P. 4 Serial N o.: 13/336,589 Reply to Office Action of
(O riginal) The apparatus of claim 1, wherein the apparatus comprises a pass ivati o n layer on top of the first or second layer of electrically conductive material.
The apparatus of.claim 1, wherein the electrons are hot electrons generated when the first layer of electrically conductive material is illuminated by electromagnetic radiation.
The apparatus of claim 1, wherein the apparatus is a diode.
(C ancelled) canceled
The apparatus of claim. 1, wherein one or bo th of the first and second layers of electrically conductive material are made solely from graphene. 2 PAGE T₁₈ RCV D AT 3 1 12015 10:12: 0 9 A M₁ [Easte rn Daylight Tie SV R:W * PTOFAX 4O01!lP DNIS:2 7 383 0 CSID:203944024 5' DURATION (min~ss):01.12 MAR. 27. 2 0 15 1 0:32AM HARRING T ON & SM I TH N 0. 918 P. 3 SVG 13336589.03-27-2015.I₇YXWCQKPXXIFW4.CLM.2.1.251.92.404.113.svg 0.07 0.51 Chemistry Black and white Serial No.: 13/33 6,589 Reply to Office Action of January 5, 201
10 -11. canceled
canceled
canceled
15-20. canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based tunnelling diode photodetector
Materials described outside the worked examples.
graphene
electrically insulating layer
Al₂O₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–10 nm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,202,945Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 35 6 A description is now given, by way of example only, with reference to the accompanying drawings, in which:-
Figure 1 a shows a conventional MIM diode without an applied potential; SVG 13336589.12-23-2011.GWJN₅WTHPXXIFW3.SPEC28045696.11.402.769.2474.815.svg 0.153 6.907 Drawing Black and white Figure 2a shows a conventional MIM diode with an applied potential; Figure 2b shows an energy band diagram for …
Figure 4 shows a rectenna comprising the present apparatus;
Figure 5 shows a photodetector comprising the present apparatus; Figure 6a shows photon-induced electron transitions within a metal; Figure 6b shows photon-induced electron transitions within graphene; 15
Figure 7 shows how the tunnelling current varies with applied voltage for the present apparatus;
Figure 8 shows a device comprising the present apparatus as well as one form of the present apparatus when the present apparatus is considered to be a particular device;
Figure 9 shows a method of making the present apparatus; 20
Figure 10 shows a method of using the present apparatus; and
Figure 11 shows a computer readable medium comprising a computer program for controlling the making and/or use of the present apparatus. Description of Specific Aspects/Embodiments 25 Diodes are circuit elements that allow a flow of electricity in one direction but not in the opposite direction. They …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(C urrently Amended) An apparatus comprising first and second layers of electrically conductive material separated by a layer of electrically insulating material, wherein one or both layers of electrically conductive material comprise graphene configured to be exposed to electromagnetic radiation, and wherein the apparatus is configured s uch that electrons are able to tunnel from the first layer of electrically conductive material through the layer of electrically insulating material to the second layer of electrically conductive material via a Quantum mechanical tunneling mechanism, wherein the apparatus is a diode, and wherein the apparatus forms part of a photodetector.
The apparatus of claim 1, wherein the first layer of electrically conductive material comprises graphene, and the second layer of electrically conductive material comprises one or mo r e of C i, Au, Al, Ni, Cu, Pt, W, and indium tin oxide or an alloy comprising one or more of the same.
(O riginal) The apparatus of claim 1, wherein one or more of the first layer of electrically conductive material, the second layer of electrically conductive material and the layer of electrically i nsulating material are optically transparent.
(O riginal) The apparatus of claim 1, wherein the apparatus is formed on a supporting substrate, and wherein the supporting substrate is electrically insulating and/or optically transparent.
(Original) The apparatus of claim 1, wherein the layer of electrically insulating material comprises o n e or more of A₁ 203, Hf 0 2,- B N and diamond-like carbon.
8. The apparatus of claim 1, wherein the second layer of electrically conductive material comprises one or more nanopi l lars. 3 PAGE 318' RCVD AT 312712015 10:12:09 AM [Easte m Daylight Time]SVR:W- PTOFAX.OOil DNIS:2 7 383 00' CSID:2 0 39440245 ' DURAT ION (mm-ss): 01-12 MAR. 2 7. 2015 10:32AM HARRIN G TON & SMITH N O. 918 P. 4 Serial N o.: 13/336,589 Reply to Office Action of
(O riginal) The apparatus of claim 1, wherein the apparatus comprises a pass ivati o n layer on top of the first or second layer of electrically conductive material.
The apparatus of.claim 1, wherein the electrons are hot electrons generated when the first layer of electrically conductive material is illuminated by electromagnetic radiation.
The apparatus of claim 1, wherein the apparatus is a diode.
(C ancelled) canceled
The apparatus of claim. 1, wherein one or bo th of the first and second layers of electrically conductive material are made solely from graphene. 2 PAGE T₁₈ RCV D AT 3 1 12015 10:12: 0 9 A M₁ [Easte rn Daylight Tie SV R:W * PTOFAX 4O01!lP DNIS:2 7 383 0 CSID:203944024 5' DURATION (min~ss):01.12 MAR. 27. 2 0 15 1 0:32AM HARRING T ON & SM I TH N 0. 918 P. 3 SVG 13336589.03-27-2015.I₇YXWCQKPXXIFW4.CLM.2.1.251.92.404.113.svg 0.07 0.51 Chemistry Black and white Serial No.: 13/33 6,589 Reply to Office Action of January 5, 201
10 -11. canceled
canceled
canceled
15-20. canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based tunnelling diode photodetector
Materials described outside the worked examples.
graphene
electrically insulating layer
Al₂O₃
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–10 nm | — |
Related documents with shared materials, methods, properties, or citations.
HfO₂
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diamond-like carbon
second conductive layer metals/ITO
HfO₂
boron nitride
BN
diamond-like carbon
second conductive layer metals/ITO
HfO₂
boron nitride
BN
diamond-like carbon
second conductive layer metals/ITO
HfO₂
boron nitride
BN
diamond-like carbon
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