Patent
US 9,042,683OPTICAL MODULATOR INCLUDING GRAPHENE
Seong-ho Cho
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,042,683Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of an optical modulator according to an example embodiment; [0022]
FIG. 2 is a cross-sectional view of the optical modulator taken along line I I-II' of
FIG. 3 is a diagram showing light intensity when a voltage is applied to the optical modulator of
FIG. 4 is a schematic cross-sectional view of an optical modulator according to another example embodiment; [0025]
FIG. 5 is a schematic cross-sectional view of an optical modulator according to another example embodiment; and [0026]
FIG. 6 is a schematic cross-sectional view of an optical modulator according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
LISTING OF CLAIMS 1. An optical modulator comprising: a first graphene and a second graphene on an upper surface of a SVG 13550802.11-18-2014.I₂W₅AOWSPXXIFW4.CLM.1.svg 0.15 6.39 Black and white s ide suffaeec separate from each other; a first electrode on the first graphene; and a second electrode on the second graphene, wherein at least one of the first graphene and the second graphene has a bent structure so as to cover an upper surface and a side surface of a first ridge portion included in the semiconductor la y er.
The optical modulator of claim 1, further comprising: a first insulating layer between the semiconductor layer and the first graphene; and a second insulating layer between the first graphene and the second graphene.
The optical modulator of claim 1, wherein each of the first graphene and the second graphene is one of a single-layered graphene and a bi- layered graphene.
. canceled
TheAn optical modulator ef-e lai m--c omprising; a first graphene and a second graphene on an upper surface of a semiconductor la y er, the first graphene and the second graphene separate from each other; a first insulating layer between the semiconductor la y er and the first graphene; a second insulating layer between the first graphene and the second graphene; a first electrode on the first graphene; and a second electrode on the second graphene, wherein the semiconductor layer includes a first ridge portion, and a second ridge portion on the second graphene, the second ridge portion configured to face the first ridge portion.
The optical modulator of claim 6, further comprising: a third insulating layer between the second graphene and the second ridge portion.
The optical modulator of claim 6, wherein the semiconductor layer includes one of silicon, germanium, Group I II -V semiconductor, and Group II-IV semiconductor.
The optical modulator of claim 6, wherein the first ridge portion of the semiconductor layer and the second ridge portion constitute an optical waveguide, and the first graphene and the second graphene are formed on a center portion of the optical waveguide in a vertical direction to the semiconductor layer.
An optical modulator comprising: a first graphene and a second graphene on an upper surface of a semiconductor layer, the first graphene and the second graphene having respective side surfaces separate from each other and having plane structures parallel to a bottom surface of the semiconductor layer; a first electrode on the first graphene; and a second electrode on the second graphene.
The optical modulator of claim 13, further comprising: a first insulating layer between the semiconductor layer and the first graphene; and a second insulating layer between the first graphene and the second graphene.
The optical modulator of claim 13, wherein each of the first graphene and the second graphene is one of a single-layered graphene and a bi- layered graphene.
Layer stacks claimed or described, ordered top of device to substrate.
optical modulator with bent graphene over ridge portion
optical modulator with first and second ridge portions forming waveguide
Materials described outside the worked examples.
first graphene
C
first insulating layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100 nm | — |
Thickness | ≤ 1 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,042,683Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of an optical modulator according to an example embodiment; [0022]
FIG. 2 is a cross-sectional view of the optical modulator taken along line I I-II' of
FIG. 3 is a diagram showing light intensity when a voltage is applied to the optical modulator of
FIG. 4 is a schematic cross-sectional view of an optical modulator according to another example embodiment; [0025]
FIG. 5 is a schematic cross-sectional view of an optical modulator according to another example embodiment; and [0026]
FIG. 6 is a schematic cross-sectional view of an optical modulator according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
LISTING OF CLAIMS 1. An optical modulator comprising: a first graphene and a second graphene on an upper surface of a SVG 13550802.11-18-2014.I₂W₅AOWSPXXIFW4.CLM.1.svg 0.15 6.39 Black and white s ide suffaeec separate from each other; a first electrode on the first graphene; and a second electrode on the second graphene, wherein at least one of the first graphene and the second graphene has a bent structure so as to cover an upper surface and a side surface of a first ridge portion included in the semiconductor la y er.
The optical modulator of claim 1, further comprising: a first insulating layer between the semiconductor layer and the first graphene; and a second insulating layer between the first graphene and the second graphene.
The optical modulator of claim 1, wherein each of the first graphene and the second graphene is one of a single-layered graphene and a bi- layered graphene.
. canceled
TheAn optical modulator ef-e lai m--c omprising; a first graphene and a second graphene on an upper surface of a semiconductor la y er, the first graphene and the second graphene separate from each other; a first insulating layer between the semiconductor la y er and the first graphene; a second insulating layer between the first graphene and the second graphene; a first electrode on the first graphene; and a second electrode on the second graphene, wherein the semiconductor layer includes a first ridge portion, and a second ridge portion on the second graphene, the second ridge portion configured to face the first ridge portion.
The optical modulator of claim 6, further comprising: a third insulating layer between the second graphene and the second ridge portion.
The optical modulator of claim 6, wherein the semiconductor layer includes one of silicon, germanium, Group I II -V semiconductor, and Group II-IV semiconductor.
The optical modulator of claim 6, wherein the first ridge portion of the semiconductor layer and the second ridge portion constitute an optical waveguide, and the first graphene and the second graphene are formed on a center portion of the optical waveguide in a vertical direction to the semiconductor layer.
An optical modulator comprising: a first graphene and a second graphene on an upper surface of a semiconductor layer, the first graphene and the second graphene having respective side surfaces separate from each other and having plane structures parallel to a bottom surface of the semiconductor layer; a first electrode on the first graphene; and a second electrode on the second graphene.
The optical modulator of claim 13, further comprising: a first insulating layer between the semiconductor layer and the first graphene; and a second insulating layer between the first graphene and the second graphene.
The optical modulator of claim 13, wherein each of the first graphene and the second graphene is one of a single-layered graphene and a bi- layered graphene.
Layer stacks claimed or described, ordered top of device to substrate.
optical modulator with bent graphene over ridge portion
optical modulator with first and second ridge portions forming waveguide
Materials described outside the worked examples.
first graphene
C
first insulating layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100 nm | — |
Thickness | ≤ 1 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,042,683Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of an optical modulator according to an example embodiment; [0022]
FIG. 2 is a cross-sectional view of the optical modulator taken along line I I-II' of
FIG. 3 is a diagram showing light intensity when a voltage is applied to the optical modulator of
FIG. 4 is a schematic cross-sectional view of an optical modulator according to another example embodiment; [0025]
FIG. 5 is a schematic cross-sectional view of an optical modulator according to another example embodiment; and [0026]
FIG. 6 is a schematic cross-sectional view of an optical modulator according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
LISTING OF CLAIMS 1. An optical modulator comprising: a first graphene and a second graphene on an upper surface of a SVG 13550802.11-18-2014.I₂W₅AOWSPXXIFW4.CLM.1.svg 0.15 6.39 Black and white s ide suffaeec separate from each other; a first electrode on the first graphene; and a second electrode on the second graphene, wherein at least one of the first graphene and the second graphene has a bent structure so as to cover an upper surface and a side surface of a first ridge portion included in the semiconductor la y er.
The optical modulator of claim 1, further comprising: a first insulating layer between the semiconductor layer and the first graphene; and a second insulating layer between the first graphene and the second graphene.
The optical modulator of claim 1, wherein each of the first graphene and the second graphene is one of a single-layered graphene and a bi- layered graphene.
. canceled
TheAn optical modulator ef-e lai m--c omprising; a first graphene and a second graphene on an upper surface of a semiconductor la y er, the first graphene and the second graphene separate from each other; a first insulating layer between the semiconductor la y er and the first graphene; a second insulating layer between the first graphene and the second graphene; a first electrode on the first graphene; and a second electrode on the second graphene, wherein the semiconductor layer includes a first ridge portion, and a second ridge portion on the second graphene, the second ridge portion configured to face the first ridge portion.
The optical modulator of claim 6, further comprising: a third insulating layer between the second graphene and the second ridge portion.
The optical modulator of claim 6, wherein the semiconductor layer includes one of silicon, germanium, Group I II -V semiconductor, and Group II-IV semiconductor.
The optical modulator of claim 6, wherein the first ridge portion of the semiconductor layer and the second ridge portion constitute an optical waveguide, and the first graphene and the second graphene are formed on a center portion of the optical waveguide in a vertical direction to the semiconductor layer.
An optical modulator comprising: a first graphene and a second graphene on an upper surface of a semiconductor layer, the first graphene and the second graphene having respective side surfaces separate from each other and having plane structures parallel to a bottom surface of the semiconductor layer; a first electrode on the first graphene; and a second electrode on the second graphene.
The optical modulator of claim 13, further comprising: a first insulating layer between the semiconductor layer and the first graphene; and a second insulating layer between the first graphene and the second graphene.
The optical modulator of claim 13, wherein each of the first graphene and the second graphene is one of a single-layered graphene and a bi- layered graphene.
Layer stacks claimed or described, ordered top of device to substrate.
optical modulator with bent graphene over ridge portion
optical modulator with first and second ridge portions forming waveguide
Materials described outside the worked examples.
first graphene
C
first insulating layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100 nm | — |
Thickness | ≤ 1 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,042,683Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of an optical modulator according to an example embodiment; [0022]
FIG. 2 is a cross-sectional view of the optical modulator taken along line I I-II' of
FIG. 3 is a diagram showing light intensity when a voltage is applied to the optical modulator of
FIG. 4 is a schematic cross-sectional view of an optical modulator according to another example embodiment; [0025]
FIG. 5 is a schematic cross-sectional view of an optical modulator according to another example embodiment; and [0026]
FIG. 6 is a schematic cross-sectional view of an optical modulator according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
LISTING OF CLAIMS 1. An optical modulator comprising: a first graphene and a second graphene on an upper surface of a SVG 13550802.11-18-2014.I₂W₅AOWSPXXIFW4.CLM.1.svg 0.15 6.39 Black and white s ide suffaeec separate from each other; a first electrode on the first graphene; and a second electrode on the second graphene, wherein at least one of the first graphene and the second graphene has a bent structure so as to cover an upper surface and a side surface of a first ridge portion included in the semiconductor la y er.
The optical modulator of claim 1, further comprising: a first insulating layer between the semiconductor layer and the first graphene; and a second insulating layer between the first graphene and the second graphene.
The optical modulator of claim 1, wherein each of the first graphene and the second graphene is one of a single-layered graphene and a bi- layered graphene.
. canceled
TheAn optical modulator ef-e lai m--c omprising; a first graphene and a second graphene on an upper surface of a semiconductor la y er, the first graphene and the second graphene separate from each other; a first insulating layer between the semiconductor la y er and the first graphene; a second insulating layer between the first graphene and the second graphene; a first electrode on the first graphene; and a second electrode on the second graphene, wherein the semiconductor layer includes a first ridge portion, and a second ridge portion on the second graphene, the second ridge portion configured to face the first ridge portion.
The optical modulator of claim 6, further comprising: a third insulating layer between the second graphene and the second ridge portion.
The optical modulator of claim 6, wherein the semiconductor layer includes one of silicon, germanium, Group I II -V semiconductor, and Group II-IV semiconductor.
The optical modulator of claim 6, wherein the first ridge portion of the semiconductor layer and the second ridge portion constitute an optical waveguide, and the first graphene and the second graphene are formed on a center portion of the optical waveguide in a vertical direction to the semiconductor layer.
An optical modulator comprising: a first graphene and a second graphene on an upper surface of a semiconductor layer, the first graphene and the second graphene having respective side surfaces separate from each other and having plane structures parallel to a bottom surface of the semiconductor layer; a first electrode on the first graphene; and a second electrode on the second graphene.
The optical modulator of claim 13, further comprising: a first insulating layer between the semiconductor layer and the first graphene; and a second insulating layer between the first graphene and the second graphene.
The optical modulator of claim 13, wherein each of the first graphene and the second graphene is one of a single-layered graphene and a bi- layered graphene.
Layer stacks claimed or described, ordered top of device to substrate.
optical modulator with bent graphene over ridge portion
optical modulator with first and second ridge portions forming waveguide
Materials described outside the worked examples.
first graphene
C
first insulating layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–100 nm | — |
Thickness | ≤ 1 nm |
Related documents with shared materials, methods, properties, or citations.
optical modulator with planar graphene layers parallel to semiconductor bottom surface
optical modulator base structure (described embodiment)
second insulating layer
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
boron nitride
BN
hexagonal boron nitride
h-BN
semiconductor layer
third insulating layer
silicon
Si
germanium
Ge
amorphous silicon layer
a-Si
oxide layer (buried oxide)
substrate
| — |
Thickness | ≥ 1 nm | — |
optical modulator with planar graphene layers parallel to semiconductor bottom surface
optical modulator base structure (described embodiment)
second insulating layer
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
boron nitride
BN
hexagonal boron nitride
h-BN
semiconductor layer
third insulating layer
silicon
Si
germanium
Ge
amorphous silicon layer
a-Si
oxide layer (buried oxide)
substrate
| — |
Thickness | ≥ 1 nm | — |
optical modulator with planar graphene layers parallel to semiconductor bottom surface
optical modulator base structure (described embodiment)
second insulating layer
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
boron nitride
BN
hexagonal boron nitride
h-BN
semiconductor layer
third insulating layer
silicon
Si
germanium
Ge
amorphous silicon layer
a-Si
oxide layer (buried oxide)
substrate
| — |
Thickness | ≥ 1 nm | — |
optical modulator with planar graphene layers parallel to semiconductor bottom surface
optical modulator base structure (described embodiment)
second insulating layer
silicon oxide
SiO₂
aluminum oxide
Al₂O₃
silicon nitride
Si₃N₄
boron nitride
BN
hexagonal boron nitride
h-BN
semiconductor layer
third insulating layer
silicon
Si
germanium
Ge
amorphous silicon layer
a-Si
oxide layer (buried oxide)
substrate
| — |
Thickness | ≥ 1 nm | — |