Patent
US 9,850,571Method for Preparing Graphene
Shumin Wang
US
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Patent
Atlas literature
Patent
US 9,850,571Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a roman spectrum of a sample before an annealing treatment, in which no 5 obvious 2D peak can be observed. 6
Figure 2 is a roman spectrum of a sample 30 minutes after an annealing treatment at 800 C, 7 in which 2D peak can be obviously observed, indicating the existence of graphene. 8 Detailed Description of the 9 Preferred Embodiments Embodiment 1 10 The object of the present invention is to provide a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing graphene, comprising the following steps: (1) selecting a proper material as a substrate; (2) directly depositing CBr 4 and catalys on a surface of the substrate, the catalyst is Ga, the deposition manner for CBr 4 and catalyst is alternatively deposition in any order more than once, in each deposition manner, the total deposition of CBr 4 is 3.8E₇-3.8E₉ molecules/m 2, the total deposition of catalyst is 1.7E₇-1.7E₉ atoms/m 2, and a deposition temperature for the CBr 4 and catalyst is between 10 ° C and 490 ° C, preferably X 150 ° C; (3) performing annealing treatment on the sample obtained by step 2 to obtain the graphene.
(Previously amended) The method for preparing graphene according to claim 1, characterized in that, the method for depositing the CBr 4 and catalyst is molecular-beam epitaxy or chemical vapor deposition.
The method for preparing graphene according to claim 1, characterized in that, the substrate material is selected from metal, semiconductor, or insulator.
The method for preparing graphene according to claim 1, characterized in that, the method for annealing treatment is that: the substrate is raised to 650-720 ° C, and the annealing GUH-237US (14/396519) Pa g e 3 time is 5-180 minutes; when completed, the temperature of the substrate is decreased to room temperature.
(Previously amended) The method for preparing graphene according to claim 1, characterized in that, before step (1), the substrate further requires for a deoxygenation treatment and a preannealing treatment.
A method for preparing graphene according to claim 1, characterized in that, in step (2) the deposition temperature for the CBr 4 and catalyst is 450 °C. GUH-237US (14/396519) Pa g e 4
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
CBr₄
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
2D peak of epitaxial graphene | 1 cm⁻¹ | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,850,571Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a roman spectrum of a sample before an annealing treatment, in which no 5 obvious 2D peak can be observed. 6
Figure 2 is a roman spectrum of a sample 30 minutes after an annealing treatment at 800 C, 7 in which 2D peak can be obviously observed, indicating the existence of graphene. 8 Detailed Description of the 9 Preferred Embodiments Embodiment 1 10 The object of the present invention is to provide a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing graphene, comprising the following steps: (1) selecting a proper material as a substrate; (2) directly depositing CBr 4 and catalys on a surface of the substrate, the catalyst is Ga, the deposition manner for CBr 4 and catalyst is alternatively deposition in any order more than once, in each deposition manner, the total deposition of CBr 4 is 3.8E₇-3.8E₉ molecules/m 2, the total deposition of catalyst is 1.7E₇-1.7E₉ atoms/m 2, and a deposition temperature for the CBr 4 and catalyst is between 10 ° C and 490 ° C, preferably X 150 ° C; (3) performing annealing treatment on the sample obtained by step 2 to obtain the graphene.
(Previously amended) The method for preparing graphene according to claim 1, characterized in that, the method for depositing the CBr 4 and catalyst is molecular-beam epitaxy or chemical vapor deposition.
The method for preparing graphene according to claim 1, characterized in that, the substrate material is selected from metal, semiconductor, or insulator.
The method for preparing graphene according to claim 1, characterized in that, the method for annealing treatment is that: the substrate is raised to 650-720 ° C, and the annealing GUH-237US (14/396519) Pa g e 3 time is 5-180 minutes; when completed, the temperature of the substrate is decreased to room temperature.
(Previously amended) The method for preparing graphene according to claim 1, characterized in that, before step (1), the substrate further requires for a deoxygenation treatment and a preannealing treatment.
A method for preparing graphene according to claim 1, characterized in that, in step (2) the deposition temperature for the CBr 4 and catalyst is 450 °C. GUH-237US (14/396519) Pa g e 4
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
CBr₄
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
2D peak of epitaxial graphene | 1 cm⁻¹ | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,850,571Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a roman spectrum of a sample before an annealing treatment, in which no 5 obvious 2D peak can be observed. 6
Figure 2 is a roman spectrum of a sample 30 minutes after an annealing treatment at 800 C, 7 in which 2D peak can be obviously observed, indicating the existence of graphene. 8 Detailed Description of the 9 Preferred Embodiments Embodiment 1 10 The object of the present invention is to provide a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing graphene, comprising the following steps: (1) selecting a proper material as a substrate; (2) directly depositing CBr 4 and catalys on a surface of the substrate, the catalyst is Ga, the deposition manner for CBr 4 and catalyst is alternatively deposition in any order more than once, in each deposition manner, the total deposition of CBr 4 is 3.8E₇-3.8E₉ molecules/m 2, the total deposition of catalyst is 1.7E₇-1.7E₉ atoms/m 2, and a deposition temperature for the CBr 4 and catalyst is between 10 ° C and 490 ° C, preferably X 150 ° C; (3) performing annealing treatment on the sample obtained by step 2 to obtain the graphene.
(Previously amended) The method for preparing graphene according to claim 1, characterized in that, the method for depositing the CBr 4 and catalyst is molecular-beam epitaxy or chemical vapor deposition.
The method for preparing graphene according to claim 1, characterized in that, the substrate material is selected from metal, semiconductor, or insulator.
The method for preparing graphene according to claim 1, characterized in that, the method for annealing treatment is that: the substrate is raised to 650-720 ° C, and the annealing GUH-237US (14/396519) Pa g e 3 time is 5-180 minutes; when completed, the temperature of the substrate is decreased to room temperature.
(Previously amended) The method for preparing graphene according to claim 1, characterized in that, before step (1), the substrate further requires for a deoxygenation treatment and a preannealing treatment.
A method for preparing graphene according to claim 1, characterized in that, in step (2) the deposition temperature for the CBr 4 and catalyst is 450 °C. GUH-237US (14/396519) Pa g e 4
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
CBr₄
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
2D peak of epitaxial graphene | 1 cm⁻¹ | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,850,571Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a roman spectrum of a sample before an annealing treatment, in which no 5 obvious 2D peak can be observed. 6
Figure 2 is a roman spectrum of a sample 30 minutes after an annealing treatment at 800 C, 7 in which 2D peak can be obviously observed, indicating the existence of graphene. 8 Detailed Description of the 9 Preferred Embodiments Embodiment 1 10 The object of the present invention is to provide a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing graphene, comprising the following steps: (1) selecting a proper material as a substrate; (2) directly depositing CBr 4 and catalys on a surface of the substrate, the catalyst is Ga, the deposition manner for CBr 4 and catalyst is alternatively deposition in any order more than once, in each deposition manner, the total deposition of CBr 4 is 3.8E₇-3.8E₉ molecules/m 2, the total deposition of catalyst is 1.7E₇-1.7E₉ atoms/m 2, and a deposition temperature for the CBr 4 and catalyst is between 10 ° C and 490 ° C, preferably X 150 ° C; (3) performing annealing treatment on the sample obtained by step 2 to obtain the graphene.
(Previously amended) The method for preparing graphene according to claim 1, characterized in that, the method for depositing the CBr 4 and catalyst is molecular-beam epitaxy or chemical vapor deposition.
The method for preparing graphene according to claim 1, characterized in that, the substrate material is selected from metal, semiconductor, or insulator.
The method for preparing graphene according to claim 1, characterized in that, the method for annealing treatment is that: the substrate is raised to 650-720 ° C, and the annealing GUH-237US (14/396519) Pa g e 3 time is 5-180 minutes; when completed, the temperature of the substrate is decreased to room temperature.
(Previously amended) The method for preparing graphene according to claim 1, characterized in that, before step (1), the substrate further requires for a deoxygenation treatment and a preannealing treatment.
A method for preparing graphene according to claim 1, characterized in that, in step (2) the deposition temperature for the CBr 4 and catalyst is 450 °C. GUH-237US (14/396519) Pa g e 4
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
CBr₄
Ga
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
2D peak of epitaxial graphene | 1 cm⁻¹ | C |
Related documents with shared materials, methods, properties, or citations.
C
substrate (metal, semiconductor, or insulator)
silicon
Si
germanium
Ge
silicon oxide
SiO₂
sapphire
Al₂O₃
| 10–490 °C |
| — |
Temperature | 650–720 °C | — |
Duration | 5–180 minutes | — |
Temperature | 400–700 °C | — |
Temperature | 600–750 °C | — |
Temperature | 0.1–1 °C | — |
NANOTUBE AND GRAPHENE SEMICONDUCTOR STRUCTURES WITH VARYING ELECTRICAL PROPERTIES
C
substrate (metal, semiconductor, or insulator)
silicon
Si
germanium
Ge
silicon oxide
SiO₂
sapphire
Al₂O₃
| 10–490 °C |
| — |
Temperature | 650–720 °C | — |
Duration | 5–180 minutes | — |
Temperature | 400–700 °C | — |
Temperature | 600–750 °C | — |
Temperature | 0.1–1 °C | — |
NANOTUBE AND GRAPHENE SEMICONDUCTOR STRUCTURES WITH VARYING ELECTRICAL PROPERTIES
C
substrate (metal, semiconductor, or insulator)
silicon
Si
germanium
Ge
silicon oxide
SiO₂
sapphire
Al₂O₃
| 10–490 °C |
| — |
Temperature | 650–720 °C | — |
Duration | 5–180 minutes | — |
Temperature | 400–700 °C | — |
Temperature | 600–750 °C | — |
Temperature | 0.1–1 °C | — |
NANOTUBE AND GRAPHENE SEMICONDUCTOR STRUCTURES WITH VARYING ELECTRICAL PROPERTIES
C
substrate (metal, semiconductor, or insulator)
silicon
Si
germanium
Ge
silicon oxide
SiO₂
sapphire
Al₂O₃
| 10–490 °C |
| — |
Temperature | 650–720 °C | — |
Duration | 5–180 minutes | — |
Temperature | 400–700 °C | — |
Temperature | 600–750 °C | — |
Temperature | 0.1–1 °C | — |
NANOTUBE AND GRAPHENE SEMICONDUCTOR STRUCTURES WITH VARYING ELECTRICAL PROPERTIES