Patent
US 8,169,003TERMINATION AND CONTACT STRUCTURES FOR A HIGH VOLTAGE GaN-BASED HETEROJUNCTION TRANSISTOR
Michael Murphy
US
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FIG. 1. The HEMT 10 includes a substrate 12, a nucleation (transitional) layer 18, a GaN buffer layer 22, an aluminum gallium nitride (A l xGa 1 xN; 0<X<1) …
FIG. 2 shows yet another embodiment of the invention in which the ohmic contacts 27 and 30 are located in recesses formed in the A l xGa 1. xN Schottky layer …
FIG. 3 shows another embodiment of the invention in which the barrier layer 24 is formed from A II nGaN instead of A I xGa 1. xN. For instance, as discussed in …
FIG. 4 shows another alternative embodiment of a gallium nitride heterojunction structure incorporated in a high electron mobility transistor (HEMT). Detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a layer disposed on the second active layer to passivate a surface of the semiconductor device, the layer including InGaN; a gate contact disposed on top of the layer; and a source ohmic contact and a drain ohmic contact respectively disposed in first and second recesses that each extend through the layer into the second active la y er.
The semiconductor device according to claim 1, wherein the first active layer comprises a group IlIl nitride semiconductor material.
The semiconductor device according to claim 1, wherein the second active layer comprises a group I ll nitride semiconductor material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based high electron mobility transistor (HEMT)
Materials described outside the worked examples.
InGaN
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The HEMT 10 includes a substrate 12, a nucleation (transitional) layer 18, a GaN buffer layer 22, an aluminum gallium nitride (A l xGa 1 xN; 0<X<1) …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 8,169,003Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The HEMT 10 includes a substrate 12, a nucleation (transitional) layer 18, a GaN buffer layer 22, an aluminum gallium nitride (A l xGa 1 xN; 0<X<1) …
FIG. 2 shows yet another embodiment of the invention in which the ohmic contacts 27 and 30 are located in recesses formed in the A l xGa 1. xN Schottky layer …
FIG. 3 shows another embodiment of the invention in which the barrier layer 24 is formed from A II nGaN instead of A I xGa 1. xN. For instance, as discussed in …
FIG. 4 shows another alternative embodiment of a gallium nitride heterojunction structure incorporated in a high electron mobility transistor (HEMT). Detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a layer disposed on the second active layer to passivate a surface of the semiconductor device, the layer including InGaN; a gate contact disposed on top of the layer; and a source ohmic contact and a drain ohmic contact respectively disposed in first and second recesses that each extend through the layer into the second active la y er.
The semiconductor device according to claim 1, wherein the first active layer comprises a group IlIl nitride semiconductor material.
The semiconductor device according to claim 1, wherein the second active layer comprises a group I ll nitride semiconductor material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based high electron mobility transistor (HEMT)
Materials described outside the worked examples.
InGaN
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The HEMT 10 includes a substrate 12, a nucleation (transitional) layer 18, a GaN buffer layer 22, an aluminum gallium nitride (A l xGa 1 xN; 0<X<1) …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,169,003Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The HEMT 10 includes a substrate 12, a nucleation (transitional) layer 18, a GaN buffer layer 22, an aluminum gallium nitride (A l xGa 1 xN; 0<X<1) …
FIG. 2 shows yet another embodiment of the invention in which the ohmic contacts 27 and 30 are located in recesses formed in the A l xGa 1. xN Schottky layer …
FIG. 3 shows another embodiment of the invention in which the barrier layer 24 is formed from A II nGaN instead of A I xGa 1. xN. For instance, as discussed in …
FIG. 4 shows another alternative embodiment of a gallium nitride heterojunction structure incorporated in a high electron mobility transistor (HEMT). Detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a layer disposed on the second active layer to passivate a surface of the semiconductor device, the layer including InGaN; a gate contact disposed on top of the layer; and a source ohmic contact and a drain ohmic contact respectively disposed in first and second recesses that each extend through the layer into the second active la y er.
The semiconductor device according to claim 1, wherein the first active layer comprises a group IlIl nitride semiconductor material.
The semiconductor device according to claim 1, wherein the second active layer comprises a group I ll nitride semiconductor material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based high electron mobility transistor (HEMT)
Materials described outside the worked examples.
InGaN
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The HEMT 10 includes a substrate 12, a nucleation (transitional) layer 18, a GaN buffer layer 22, an aluminum gallium nitride (A l xGa 1 xN; 0<X<1) …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,169,003Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The HEMT 10 includes a substrate 12, a nucleation (transitional) layer 18, a GaN buffer layer 22, an aluminum gallium nitride (A l xGa 1 xN; 0<X<1) …
FIG. 2 shows yet another embodiment of the invention in which the ohmic contacts 27 and 30 are located in recesses formed in the A l xGa 1. xN Schottky layer …
FIG. 3 shows another embodiment of the invention in which the barrier layer 24 is formed from A II nGaN instead of A I xGa 1. xN. For instance, as discussed in …
FIG. 4 shows another alternative embodiment of a gallium nitride heterojunction structure incorporated in a high electron mobility transistor (HEMT). Detailed …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a layer disposed on the second active layer to passivate a surface of the semiconductor device, the layer including InGaN; a gate contact disposed on top of the layer; and a source ohmic contact and a drain ohmic contact respectively disposed in first and second recesses that each extend through the layer into the second active la y er.
The semiconductor device according to claim 1, wherein the first active layer comprises a group IlIl nitride semiconductor material.
The semiconductor device according to claim 1, wherein the second active layer comprises a group I ll nitride semiconductor material.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based high electron mobility transistor (HEMT)
Materials described outside the worked examples.
InGaN
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. The HEMT 10 includes a substrate 12, a nucleation (transitional) layer 18, a GaN buffer layer 22, an aluminum gallium nitride (A l xGa 1 xN; 0<X<1) …
Related documents with shared materials, methods, properties, or citations.
group III nitride semiconductor material
AlxGa₁-xN
AlGaN
AlInN
AlInGaN
Fe-doped GaN
Si-doped GaN
FeN
SiN
FIG. 4 shows another alternative embodiment of a gallium nitride heterojunction structure incorporated in a high electron mobility transistor (HEMT). Detailed …
group III nitride semiconductor material
AlxGa₁-xN
AlGaN
AlInN
AlInGaN
Fe-doped GaN
Si-doped GaN
FeN
SiN
FIG. 4 shows another alternative embodiment of a gallium nitride heterojunction structure incorporated in a high electron mobility transistor (HEMT). Detailed …
group III nitride semiconductor material
AlxGa₁-xN
AlGaN
AlInN
AlInGaN
Fe-doped GaN
Si-doped GaN
FeN
SiN
FIG. 4 shows another alternative embodiment of a gallium nitride heterojunction structure incorporated in a high electron mobility transistor (HEMT). Detailed …
group III nitride semiconductor material
AlxGa₁-xN
AlGaN
AlInN
AlInGaN
Fe-doped GaN
Si-doped GaN
FeN
SiN
FIG. 4 shows another alternative embodiment of a gallium nitride heterojunction structure incorporated in a high electron mobility transistor (HEMT). Detailed …