Patent
Atlas literature
Patent
US 12,216,152 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a block diagram of a GaN-based inte- 40 grated circuit, in accordance with some embodiments.
FIG. 2 illustrates a detailed block diagram of the GaN- based integrated circuit of
FIGS. 3, 4, 5, 6, 7, and 8 illustrate example cross-sectional 45 views of various GaN-based components of the GaN-based integrated circuit of
FIG. 4, the component 400 may be implemented as a HEMT that can be used in the low-voltage circuit 160. Further, the component 400 may operate under an …
FIG. 5, the component 500 may be implemented as a HEMT that can be used in the low-voltage circuit 160. Further, the component 500 may operate under a …
FIG. 6, the component 600 may be implemented in a HEMT structure that can be used in the 10 high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIG. 7, the component 700 may be implemented in a HEMT structure that can be used in the 40 high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIG. 8, the component 800 may be implemented in a HEMT structure that can be used in the high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIGS. 9, 10, and 11 illustrate example circuit diagrams of various GaN-based circuits of the GaN-based integrated 50 circuit of
FIG. 10, the control circuit 262 can include a number of GaN-based transistors 1002 and 1004 operatively (e.g., electrically) coupled to one another as shown, …
FIG. 11, the driver circuit 264 can include a number of GaN-based transistors 15 1102 and 1104 operatively (e.g., electrically) coupled to one another as …
FIG. 12 illustrate a flow chart of example method to test the GaN-based integrated circuit of
FIGS. 13, 14, 15, 16, 17, and 18 illustrate various test 55 signals implemented by the method of
FIG. 14 illustrates another set of the first test signals and another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 15 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 16 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 17 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 18 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 19 illustrates a block diagram of a test system to test a GaN-based integrated circuit, in accordance with some embodiments. 60
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit, comprising: a first circuit formed based on one or more Group III-V compound materials and configured to operate with a first voltage range; a second circuit formed based on the one or more Group III-V compound materials, operatively coupled to the first circuit, and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range; a plurality of first test terminals only operatively coupled to the first circuit; and a plurality of second test terminals only operatively coupled to the second circuit.
The integrated circuit of claim 1, wherein the one or more Group III-V compound materials include gallium nitride.
The integrated circuit of claim 1, wherein the plurality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
The integrated circuit of claim 1, wherein test signals applied to the plurality of first test terminals and to the plurality of second test terminals, respectively, are indepen-dent from each other.
An integrated circuit, comprising: a first circuit formed based on gallium nitride, wherein the first circuit is configured to operate with a first voltage range; a second circuit formed based on the gallium nitride, wherein the second circuit is configured to operate with a second voltage range that is substantially higher than the first voltage range; a plurality of first test terminals connected only to the first circuit; and a plurality of second test terminals connected only to the second circuit; wherein test signals applied to the plurality of first test terminals and to the plurality of second test terminals, respectively, are independent from each other.
The integrated circuit of claim 13, wherein the plu-rality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
An integrated circuit, comprising: a first circuit formed based on one or more Group III-V compound materials and configured to operate with a first voltage range; a second circuit formed based on the one or more Group III-V compound materials, operatively coupled to the first circuit, and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range; a plurality of first test terminals only operatively coupled to the first circuit; and a plurality of second test terminals only operatively coupled to the second circuit; wherein the plurality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
The integrated circuit of claim 19, wherein the one or more Group III-V compound materials include gallium nitride. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based integrated circuit with low-voltage and high-voltage circuits and separate test terminals
No layer stack recorded.
Materials described outside the worked examples.
Group III-V compound materials
gallium nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10, the control circuit 262 can include a number of GaN-based transistors 1002 and 1004 operatively (e.g., electrically) coupled to one another as shown, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 70–300 nm | — |
Thickness | 500–1050 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,216,152 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a block diagram of a GaN-based inte- 40 grated circuit, in accordance with some embodiments.
FIG. 2 illustrates a detailed block diagram of the GaN- based integrated circuit of
FIGS. 3, 4, 5, 6, 7, and 8 illustrate example cross-sectional 45 views of various GaN-based components of the GaN-based integrated circuit of
FIG. 4, the component 400 may be implemented as a HEMT that can be used in the low-voltage circuit 160. Further, the component 400 may operate under an …
FIG. 5, the component 500 may be implemented as a HEMT that can be used in the low-voltage circuit 160. Further, the component 500 may operate under a …
FIG. 6, the component 600 may be implemented in a HEMT structure that can be used in the 10 high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIG. 7, the component 700 may be implemented in a HEMT structure that can be used in the 40 high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIG. 8, the component 800 may be implemented in a HEMT structure that can be used in the high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIGS. 9, 10, and 11 illustrate example circuit diagrams of various GaN-based circuits of the GaN-based integrated 50 circuit of
FIG. 10, the control circuit 262 can include a number of GaN-based transistors 1002 and 1004 operatively (e.g., electrically) coupled to one another as shown, …
FIG. 11, the driver circuit 264 can include a number of GaN-based transistors 15 1102 and 1104 operatively (e.g., electrically) coupled to one another as …
FIG. 12 illustrate a flow chart of example method to test the GaN-based integrated circuit of
FIGS. 13, 14, 15, 16, 17, and 18 illustrate various test 55 signals implemented by the method of
FIG. 14 illustrates another set of the first test signals and another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 15 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 16 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 17 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 18 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 19 illustrates a block diagram of a test system to test a GaN-based integrated circuit, in accordance with some embodiments. 60
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit, comprising: a first circuit formed based on one or more Group III-V compound materials and configured to operate with a first voltage range; a second circuit formed based on the one or more Group III-V compound materials, operatively coupled to the first circuit, and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range; a plurality of first test terminals only operatively coupled to the first circuit; and a plurality of second test terminals only operatively coupled to the second circuit.
The integrated circuit of claim 1, wherein the one or more Group III-V compound materials include gallium nitride.
The integrated circuit of claim 1, wherein the plurality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
The integrated circuit of claim 1, wherein test signals applied to the plurality of first test terminals and to the plurality of second test terminals, respectively, are indepen-dent from each other.
An integrated circuit, comprising: a first circuit formed based on gallium nitride, wherein the first circuit is configured to operate with a first voltage range; a second circuit formed based on the gallium nitride, wherein the second circuit is configured to operate with a second voltage range that is substantially higher than the first voltage range; a plurality of first test terminals connected only to the first circuit; and a plurality of second test terminals connected only to the second circuit; wherein test signals applied to the plurality of first test terminals and to the plurality of second test terminals, respectively, are independent from each other.
The integrated circuit of claim 13, wherein the plu-rality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
An integrated circuit, comprising: a first circuit formed based on one or more Group III-V compound materials and configured to operate with a first voltage range; a second circuit formed based on the one or more Group III-V compound materials, operatively coupled to the first circuit, and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range; a plurality of first test terminals only operatively coupled to the first circuit; and a plurality of second test terminals only operatively coupled to the second circuit; wherein the plurality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
The integrated circuit of claim 19, wherein the one or more Group III-V compound materials include gallium nitride. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based integrated circuit with low-voltage and high-voltage circuits and separate test terminals
No layer stack recorded.
Materials described outside the worked examples.
Group III-V compound materials
gallium nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10, the control circuit 262 can include a number of GaN-based transistors 1002 and 1004 operatively (e.g., electrically) coupled to one another as shown, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 70–300 nm | — |
Thickness | 500–1050 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,216,152 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a block diagram of a GaN-based inte- 40 grated circuit, in accordance with some embodiments.
FIG. 2 illustrates a detailed block diagram of the GaN- based integrated circuit of
FIGS. 3, 4, 5, 6, 7, and 8 illustrate example cross-sectional 45 views of various GaN-based components of the GaN-based integrated circuit of
FIG. 4, the component 400 may be implemented as a HEMT that can be used in the low-voltage circuit 160. Further, the component 400 may operate under an …
FIG. 5, the component 500 may be implemented as a HEMT that can be used in the low-voltage circuit 160. Further, the component 500 may operate under a …
FIG. 6, the component 600 may be implemented in a HEMT structure that can be used in the 10 high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIG. 7, the component 700 may be implemented in a HEMT structure that can be used in the 40 high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIG. 8, the component 800 may be implemented in a HEMT structure that can be used in the high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIGS. 9, 10, and 11 illustrate example circuit diagrams of various GaN-based circuits of the GaN-based integrated 50 circuit of
FIG. 10, the control circuit 262 can include a number of GaN-based transistors 1002 and 1004 operatively (e.g., electrically) coupled to one another as shown, …
FIG. 11, the driver circuit 264 can include a number of GaN-based transistors 15 1102 and 1104 operatively (e.g., electrically) coupled to one another as …
FIG. 12 illustrate a flow chart of example method to test the GaN-based integrated circuit of
FIGS. 13, 14, 15, 16, 17, and 18 illustrate various test 55 signals implemented by the method of
FIG. 14 illustrates another set of the first test signals and another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 15 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 16 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 17 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 18 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 19 illustrates a block diagram of a test system to test a GaN-based integrated circuit, in accordance with some embodiments. 60
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit, comprising: a first circuit formed based on one or more Group III-V compound materials and configured to operate with a first voltage range; a second circuit formed based on the one or more Group III-V compound materials, operatively coupled to the first circuit, and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range; a plurality of first test terminals only operatively coupled to the first circuit; and a plurality of second test terminals only operatively coupled to the second circuit.
The integrated circuit of claim 1, wherein the one or more Group III-V compound materials include gallium nitride.
The integrated circuit of claim 1, wherein the plurality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
The integrated circuit of claim 1, wherein test signals applied to the plurality of first test terminals and to the plurality of second test terminals, respectively, are indepen-dent from each other.
An integrated circuit, comprising: a first circuit formed based on gallium nitride, wherein the first circuit is configured to operate with a first voltage range; a second circuit formed based on the gallium nitride, wherein the second circuit is configured to operate with a second voltage range that is substantially higher than the first voltage range; a plurality of first test terminals connected only to the first circuit; and a plurality of second test terminals connected only to the second circuit; wherein test signals applied to the plurality of first test terminals and to the plurality of second test terminals, respectively, are independent from each other.
The integrated circuit of claim 13, wherein the plu-rality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
An integrated circuit, comprising: a first circuit formed based on one or more Group III-V compound materials and configured to operate with a first voltage range; a second circuit formed based on the one or more Group III-V compound materials, operatively coupled to the first circuit, and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range; a plurality of first test terminals only operatively coupled to the first circuit; and a plurality of second test terminals only operatively coupled to the second circuit; wherein the plurality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
The integrated circuit of claim 19, wherein the one or more Group III-V compound materials include gallium nitride. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based integrated circuit with low-voltage and high-voltage circuits and separate test terminals
No layer stack recorded.
Materials described outside the worked examples.
Group III-V compound materials
gallium nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10, the control circuit 262 can include a number of GaN-based transistors 1002 and 1004 operatively (e.g., electrically) coupled to one another as shown, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 70–300 nm | — |
Thickness | 500–1050 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,216,152 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a block diagram of a GaN-based inte- 40 grated circuit, in accordance with some embodiments.
FIG. 2 illustrates a detailed block diagram of the GaN- based integrated circuit of
FIGS. 3, 4, 5, 6, 7, and 8 illustrate example cross-sectional 45 views of various GaN-based components of the GaN-based integrated circuit of
FIG. 4, the component 400 may be implemented as a HEMT that can be used in the low-voltage circuit 160. Further, the component 400 may operate under an …
FIG. 5, the component 500 may be implemented as a HEMT that can be used in the low-voltage circuit 160. Further, the component 500 may operate under a …
FIG. 6, the component 600 may be implemented in a HEMT structure that can be used in the 10 high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIG. 7, the component 700 may be implemented in a HEMT structure that can be used in the 40 high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIG. 8, the component 800 may be implemented in a HEMT structure that can be used in the high-voltage circuit 110 and/or the low-voltage circuit 160. The …
FIGS. 9, 10, and 11 illustrate example circuit diagrams of various GaN-based circuits of the GaN-based integrated 50 circuit of
FIG. 10, the control circuit 262 can include a number of GaN-based transistors 1002 and 1004 operatively (e.g., electrically) coupled to one another as shown, …
FIG. 11, the driver circuit 264 can include a number of GaN-based transistors 15 1102 and 1104 operatively (e.g., electrically) coupled to one another as …
FIG. 12 illustrate a flow chart of example method to test the GaN-based integrated circuit of
FIGS. 13, 14, 15, 16, 17, and 18 illustrate various test 55 signals implemented by the method of
FIG. 14 illustrates another set of the first test signals and another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 15 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 16 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 17 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 18 illustrates yet another set of the first test signals and yet another set of the second test signals being applied to the high-voltage circuit 110 and …
FIG. 19 illustrates a block diagram of a test system to test a GaN-based integrated circuit, in accordance with some embodiments. 60
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit, comprising: a first circuit formed based on one or more Group III-V compound materials and configured to operate with a first voltage range; a second circuit formed based on the one or more Group III-V compound materials, operatively coupled to the first circuit, and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range; a plurality of first test terminals only operatively coupled to the first circuit; and a plurality of second test terminals only operatively coupled to the second circuit.
The integrated circuit of claim 1, wherein the one or more Group III-V compound materials include gallium nitride.
The integrated circuit of claim 1, wherein the plurality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
The integrated circuit of claim 1, wherein test signals applied to the plurality of first test terminals and to the plurality of second test terminals, respectively, are indepen-dent from each other.
An integrated circuit, comprising: a first circuit formed based on gallium nitride, wherein the first circuit is configured to operate with a first voltage range; a second circuit formed based on the gallium nitride, wherein the second circuit is configured to operate with a second voltage range that is substantially higher than the first voltage range; a plurality of first test terminals connected only to the first circuit; and a plurality of second test terminals connected only to the second circuit; wherein test signals applied to the plurality of first test terminals and to the plurality of second test terminals, respectively, are independent from each other.
The integrated circuit of claim 13, wherein the plu-rality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
An integrated circuit, comprising: a first circuit formed based on one or more Group III-V compound materials and configured to operate with a first voltage range; a second circuit formed based on the one or more Group III-V compound materials, operatively coupled to the first circuit, and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range; a plurality of first test terminals only operatively coupled to the first circuit; and a plurality of second test terminals only operatively coupled to the second circuit; wherein the plurality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.
The integrated circuit of claim 19, wherein the one or more Group III-V compound materials include gallium nitride. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based integrated circuit with low-voltage and high-voltage circuits and separate test terminals
No layer stack recorded.
Materials described outside the worked examples.
Group III-V compound materials
gallium nitride
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 10, the control circuit 262 can include a number of GaN-based transistors 1002 and 1004 operatively (e.g., electrically) coupled to one another as shown, …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 70–300 nm | — |
Thickness | 500–1050 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
aluminum gallium nitride
AlGaN
indium gallium nitride
InGaN
aluminum indium gallium nitride
AlInGaN
FIG. 11, the driver circuit 264 can include a number of GaN-based transistors 15 1102 and 1104 operatively (e.g., electrically) coupled to one another as …
| — |
Thickness | 500–2000 nm | — |
Thickness | 200–500 nm | — |
Cited non-patent literature · 2
GALLIUM NITRIDE-ON-SILICON DEVICES
aluminum gallium nitride
AlGaN
indium gallium nitride
InGaN
aluminum indium gallium nitride
AlInGaN
FIG. 11, the driver circuit 264 can include a number of GaN-based transistors 15 1102 and 1104 operatively (e.g., electrically) coupled to one another as …
| — |
Thickness | 500–2000 nm | — |
Thickness | 200–500 nm | — |
Cited non-patent literature · 2
GALLIUM NITRIDE-ON-SILICON DEVICES
aluminum gallium nitride
AlGaN
indium gallium nitride
InGaN
aluminum indium gallium nitride
AlInGaN
FIG. 11, the driver circuit 264 can include a number of GaN-based transistors 15 1102 and 1104 operatively (e.g., electrically) coupled to one another as …
| — |
Thickness | 500–2000 nm | — |
Thickness | 200–500 nm | — |
Cited non-patent literature · 2
GALLIUM NITRIDE-ON-SILICON DEVICES
aluminum gallium nitride
AlGaN
indium gallium nitride
InGaN
aluminum indium gallium nitride
AlInGaN
FIG. 11, the driver circuit 264 can include a number of GaN-based transistors 15 1102 and 1104 operatively (e.g., electrically) coupled to one another as …
| — |
Thickness | 500–2000 nm | — |
Thickness | 200–500 nm | — |
Cited non-patent literature · 2
