Patent
US 12,432,959 B2GALLIUM NITRIDE-ON-SILICON DEVICES
Jun-De Jin, Chan-Hong Chern
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)·Sep. 30, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 12,432,959 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a block diagram of an electronic device in which aspects of the disclosure may be practiced in accordance with some embodiments; 55
FIG. 2 depicts a flowchart of an example method of fabricating an electrical component device in accordance with some embodiments;
FIG. 3 illustrates a cross-sectional view of a first example of an electrical component device in accordance with some 60 embodiments;
FIG. 4 depicts a cross-sectional view of a second example of an electrical component device in accordance with some embodiment;
FIG. 5 illustrates a flowchart of a method of fabricating 65 the first and the second embodiments of the electrical component device shown in
FIGS. 6A-6D depict cross-sectional views of a method of fabricating a third example of an electrical component device in accordance with some embodiments;
FIGS. 7-10 illustrate cross-sectional views of alternate on-chip inductors to the third example of the electrical component device shown in
FIG. 8. However, in
FIG. 9, the trench 900 is formed through the second layer 308, the 2DEG layer 500, the first layer 306, and the buffer layer 302. As shown in
FIG. 10, the trench 1000 is formed through the second layer 308, the 2DEG layer 500, the first layer 306, and the buffer layer 302 and into a portion of the …
FIGS. 11A-11D depict cross-sectional views of a method of fabricating a fourth example of an electrical component device in accordance with some embodiments;
FIGS. 12-14 illustrate example inductors that are suitable for use in an electrical component device in accordance with some embodiments; and
FIG. 13). The inductor can have two terminals or more 5 terminals. For example, the example inductor 1200 in
FIG. 14 has four terminals 1402, 1404, 1406, 1408. Additionally, an inductor can be composed of a single metal layer or multiple metal layers. For example, the …
FIG. 15 depicts a block diagram of a computing device with which aspects of the disclosure may be practiced in accordance with some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a first electrical component; an electrical component device comprising: a buffer layer disposed over a frontside surface of a substrate; a first layer of gallium nitride disposed over the buffer layer; 55 a second layer of aluminum gallium nitride disposed over the first layer, wherein a two-dimensional elec-tron gas (2DEG) layer is disposed at an interface between the first layer and the second layer, and the second layer comprises a first 2DEG segment and a 60 second 2DEG segment and a gap between the first and the second 2DEG segments; a second electrical component positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments, wherein the second electrical component is operably connected to the first electrical component; and B₂ a third layer of p-doped gallium nitride disposed over only a portion of the second layer, wherein the gap between the first 2DEG segment and the second 2DEG segment corresponds to a contour of the p-doped gallium nitride layer.
The electronic device of claim 1, further comprising a trench formed from a backside surface of the substrate through the substrate, through the buffer layer, through the first layer, and through the 2DEG layer, wherein the trench creates the gap in the 2DEG layer.
The electronic device of claim 1, wherein the substrate is a silicon-based substrate.
The electronic device of claim 1, wherein: the first layer of gallium nitride is a first layer of gallium nitride (GayN₁-y); and the buffer layer is a layer of gallium nitride (GaxN₁-x).
The electronic device of claim 1, wherein the buffer layer is configured to gradually transfer a crystal lattice from the substrate to the buffer layer for lattice matching.
The electronic device of claim 1, wherein the electronic device is a printed circuit board.
The electronic device of claim 1, wherein the electronic device is a monolithic microwave integrated circuit or a microwave integrated circuit.
The electronic device of claim 1, wherein the first electrical component comprises an inductor.
An electrical component device, comprising: a buffer layer disposed over a high resistivity substrate; a first layer of gallium nitride disposed over the buffer layer; a second layer of aluminum gallium nitride disposed over the first layer, wherein a layer of a two-dimensional electron gas (2DEG) formed at an interface between the first layer and the second layer comprises a first 2DEG segment and a second 2DEG segment and a gap between the first and the second 2DEG segments; and an electrical component positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments.
The electrical component device of claim 10, further comprising a third layer of p-doped gallium nitride disposed over only a portion of the second layer, wherein the gap between the first 2DEG segment and the second 2DEG segment corresponds to a contour of the p-doped gallium nitride layer.
The electrical component device of claim 10, further comprising a trench formed from a backside through the substrate, the buffer layer, the first layer, and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.
The electrical component device of claim 10, further comprising a trench formed from the frontside through the second layer and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.
The electrical component device of claim 10, wherein the electrical component comprises an inductor.
A method of fabricating an electrical component device, comprising: forming a buffer layer over a substrate; forming a first layer of gallium nitride over the buffer layer; 11 12 forming a second layer of aluminum gallium nitride over the first layer; forming a first two dimensional electron gas (2DEG) segment and a second 2DEG segment at an interface between the first layer and the second layer including forming a third layer of a p-doped gallium nitride over a portion of the second layer, wherein the first 2DEG segment is separated from the second 2DEG segment by a gap that corresponds to a contour of the third layer; disposing an electrical component over the second layer, over the third layer and over at least a portion of the gap; and patterning the third layer to form one or more openings in the third layer prior to disposing the electrical compo-nent over the third layer, wherein an additional 2DEG segment is formed at the interface between the first layer and the second layer below each of the one or more openings in the third layer.
The method of claim 16, wherein the electrical com-ponent is an inductor.
The method of claim 16, wherein the substrate is a silicon-based substrate.
The method of claim 16, wherein forming the first 2DEG segment and the second 2DEG segment comprises: forming a trench through the 2DEG layer to produce the first 2DEG segment and the second 2DEG segment, wherein the trench comprises the gap; and forming a dielectric material in the trench.
The method of claim 16, wherein the substrate com-prises a high resistivity substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon electronic device with discontinuous 2DEG
GaN-on-silicon electrical component device with discontinuous 2DEG
Materials described outside the worked examples.
gallium nitride (buffer layer)
GaxN₁-x
gallium nitride (channel layer)
GayN₁-y
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a flowchart of an example method of fabricating an electrical component device in accordance with some embodiments;
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,432,959 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a block diagram of an electronic device in which aspects of the disclosure may be practiced in accordance with some embodiments; 55
FIG. 2 depicts a flowchart of an example method of fabricating an electrical component device in accordance with some embodiments;
FIG. 3 illustrates a cross-sectional view of a first example of an electrical component device in accordance with some 60 embodiments;
FIG. 4 depicts a cross-sectional view of a second example of an electrical component device in accordance with some embodiment;
FIG. 5 illustrates a flowchart of a method of fabricating 65 the first and the second embodiments of the electrical component device shown in
FIGS. 6A-6D depict cross-sectional views of a method of fabricating a third example of an electrical component device in accordance with some embodiments;
FIGS. 7-10 illustrate cross-sectional views of alternate on-chip inductors to the third example of the electrical component device shown in
FIG. 8. However, in
FIG. 9, the trench 900 is formed through the second layer 308, the 2DEG layer 500, the first layer 306, and the buffer layer 302. As shown in
FIG. 10, the trench 1000 is formed through the second layer 308, the 2DEG layer 500, the first layer 306, and the buffer layer 302 and into a portion of the …
FIGS. 11A-11D depict cross-sectional views of a method of fabricating a fourth example of an electrical component device in accordance with some embodiments;
FIGS. 12-14 illustrate example inductors that are suitable for use in an electrical component device in accordance with some embodiments; and
FIG. 13). The inductor can have two terminals or more 5 terminals. For example, the example inductor 1200 in
FIG. 14 has four terminals 1402, 1404, 1406, 1408. Additionally, an inductor can be composed of a single metal layer or multiple metal layers. For example, the …
FIG. 15 depicts a block diagram of a computing device with which aspects of the disclosure may be practiced in accordance with some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a first electrical component; an electrical component device comprising: a buffer layer disposed over a frontside surface of a substrate; a first layer of gallium nitride disposed over the buffer layer; 55 a second layer of aluminum gallium nitride disposed over the first layer, wherein a two-dimensional elec-tron gas (2DEG) layer is disposed at an interface between the first layer and the second layer, and the second layer comprises a first 2DEG segment and a 60 second 2DEG segment and a gap between the first and the second 2DEG segments; a second electrical component positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments, wherein the second electrical component is operably connected to the first electrical component; and B₂ a third layer of p-doped gallium nitride disposed over only a portion of the second layer, wherein the gap between the first 2DEG segment and the second 2DEG segment corresponds to a contour of the p-doped gallium nitride layer.
The electronic device of claim 1, further comprising a trench formed from a backside surface of the substrate through the substrate, through the buffer layer, through the first layer, and through the 2DEG layer, wherein the trench creates the gap in the 2DEG layer.
The electronic device of claim 1, wherein the substrate is a silicon-based substrate.
The electronic device of claim 1, wherein: the first layer of gallium nitride is a first layer of gallium nitride (GayN₁-y); and the buffer layer is a layer of gallium nitride (GaxN₁-x).
The electronic device of claim 1, wherein the buffer layer is configured to gradually transfer a crystal lattice from the substrate to the buffer layer for lattice matching.
The electronic device of claim 1, wherein the electronic device is a printed circuit board.
The electronic device of claim 1, wherein the electronic device is a monolithic microwave integrated circuit or a microwave integrated circuit.
The electronic device of claim 1, wherein the first electrical component comprises an inductor.
An electrical component device, comprising: a buffer layer disposed over a high resistivity substrate; a first layer of gallium nitride disposed over the buffer layer; a second layer of aluminum gallium nitride disposed over the first layer, wherein a layer of a two-dimensional electron gas (2DEG) formed at an interface between the first layer and the second layer comprises a first 2DEG segment and a second 2DEG segment and a gap between the first and the second 2DEG segments; and an electrical component positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments.
The electrical component device of claim 10, further comprising a third layer of p-doped gallium nitride disposed over only a portion of the second layer, wherein the gap between the first 2DEG segment and the second 2DEG segment corresponds to a contour of the p-doped gallium nitride layer.
The electrical component device of claim 10, further comprising a trench formed from a backside through the substrate, the buffer layer, the first layer, and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.
The electrical component device of claim 10, further comprising a trench formed from the frontside through the second layer and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.
The electrical component device of claim 10, wherein the electrical component comprises an inductor.
A method of fabricating an electrical component device, comprising: forming a buffer layer over a substrate; forming a first layer of gallium nitride over the buffer layer; 11 12 forming a second layer of aluminum gallium nitride over the first layer; forming a first two dimensional electron gas (2DEG) segment and a second 2DEG segment at an interface between the first layer and the second layer including forming a third layer of a p-doped gallium nitride over a portion of the second layer, wherein the first 2DEG segment is separated from the second 2DEG segment by a gap that corresponds to a contour of the third layer; disposing an electrical component over the second layer, over the third layer and over at least a portion of the gap; and patterning the third layer to form one or more openings in the third layer prior to disposing the electrical compo-nent over the third layer, wherein an additional 2DEG segment is formed at the interface between the first layer and the second layer below each of the one or more openings in the third layer.
The method of claim 16, wherein the electrical com-ponent is an inductor.
The method of claim 16, wherein the substrate is a silicon-based substrate.
The method of claim 16, wherein forming the first 2DEG segment and the second 2DEG segment comprises: forming a trench through the 2DEG layer to produce the first 2DEG segment and the second 2DEG segment, wherein the trench comprises the gap; and forming a dielectric material in the trench.
The method of claim 16, wherein the substrate com-prises a high resistivity substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon electronic device with discontinuous 2DEG
GaN-on-silicon electrical component device with discontinuous 2DEG
Materials described outside the worked examples.
gallium nitride (buffer layer)
GaxN₁-x
gallium nitride (channel layer)
GayN₁-y
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a flowchart of an example method of fabricating an electrical component device in accordance with some embodiments;
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,432,959 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a block diagram of an electronic device in which aspects of the disclosure may be practiced in accordance with some embodiments; 55
FIG. 2 depicts a flowchart of an example method of fabricating an electrical component device in accordance with some embodiments;
FIG. 3 illustrates a cross-sectional view of a first example of an electrical component device in accordance with some 60 embodiments;
FIG. 4 depicts a cross-sectional view of a second example of an electrical component device in accordance with some embodiment;
FIG. 5 illustrates a flowchart of a method of fabricating 65 the first and the second embodiments of the electrical component device shown in
FIGS. 6A-6D depict cross-sectional views of a method of fabricating a third example of an electrical component device in accordance with some embodiments;
FIGS. 7-10 illustrate cross-sectional views of alternate on-chip inductors to the third example of the electrical component device shown in
FIG. 8. However, in
FIG. 9, the trench 900 is formed through the second layer 308, the 2DEG layer 500, the first layer 306, and the buffer layer 302. As shown in
FIG. 10, the trench 1000 is formed through the second layer 308, the 2DEG layer 500, the first layer 306, and the buffer layer 302 and into a portion of the …
FIGS. 11A-11D depict cross-sectional views of a method of fabricating a fourth example of an electrical component device in accordance with some embodiments;
FIGS. 12-14 illustrate example inductors that are suitable for use in an electrical component device in accordance with some embodiments; and
FIG. 13). The inductor can have two terminals or more 5 terminals. For example, the example inductor 1200 in
FIG. 14 has four terminals 1402, 1404, 1406, 1408. Additionally, an inductor can be composed of a single metal layer or multiple metal layers. For example, the …
FIG. 15 depicts a block diagram of a computing device with which aspects of the disclosure may be practiced in accordance with some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a first electrical component; an electrical component device comprising: a buffer layer disposed over a frontside surface of a substrate; a first layer of gallium nitride disposed over the buffer layer; 55 a second layer of aluminum gallium nitride disposed over the first layer, wherein a two-dimensional elec-tron gas (2DEG) layer is disposed at an interface between the first layer and the second layer, and the second layer comprises a first 2DEG segment and a 60 second 2DEG segment and a gap between the first and the second 2DEG segments; a second electrical component positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments, wherein the second electrical component is operably connected to the first electrical component; and B₂ a third layer of p-doped gallium nitride disposed over only a portion of the second layer, wherein the gap between the first 2DEG segment and the second 2DEG segment corresponds to a contour of the p-doped gallium nitride layer.
The electronic device of claim 1, further comprising a trench formed from a backside surface of the substrate through the substrate, through the buffer layer, through the first layer, and through the 2DEG layer, wherein the trench creates the gap in the 2DEG layer.
The electronic device of claim 1, wherein the substrate is a silicon-based substrate.
The electronic device of claim 1, wherein: the first layer of gallium nitride is a first layer of gallium nitride (GayN₁-y); and the buffer layer is a layer of gallium nitride (GaxN₁-x).
The electronic device of claim 1, wherein the buffer layer is configured to gradually transfer a crystal lattice from the substrate to the buffer layer for lattice matching.
The electronic device of claim 1, wherein the electronic device is a printed circuit board.
The electronic device of claim 1, wherein the electronic device is a monolithic microwave integrated circuit or a microwave integrated circuit.
The electronic device of claim 1, wherein the first electrical component comprises an inductor.
An electrical component device, comprising: a buffer layer disposed over a high resistivity substrate; a first layer of gallium nitride disposed over the buffer layer; a second layer of aluminum gallium nitride disposed over the first layer, wherein a layer of a two-dimensional electron gas (2DEG) formed at an interface between the first layer and the second layer comprises a first 2DEG segment and a second 2DEG segment and a gap between the first and the second 2DEG segments; and an electrical component positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments.
The electrical component device of claim 10, further comprising a third layer of p-doped gallium nitride disposed over only a portion of the second layer, wherein the gap between the first 2DEG segment and the second 2DEG segment corresponds to a contour of the p-doped gallium nitride layer.
The electrical component device of claim 10, further comprising a trench formed from a backside through the substrate, the buffer layer, the first layer, and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.
The electrical component device of claim 10, further comprising a trench formed from the frontside through the second layer and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.
The electrical component device of claim 10, wherein the electrical component comprises an inductor.
A method of fabricating an electrical component device, comprising: forming a buffer layer over a substrate; forming a first layer of gallium nitride over the buffer layer; 11 12 forming a second layer of aluminum gallium nitride over the first layer; forming a first two dimensional electron gas (2DEG) segment and a second 2DEG segment at an interface between the first layer and the second layer including forming a third layer of a p-doped gallium nitride over a portion of the second layer, wherein the first 2DEG segment is separated from the second 2DEG segment by a gap that corresponds to a contour of the third layer; disposing an electrical component over the second layer, over the third layer and over at least a portion of the gap; and patterning the third layer to form one or more openings in the third layer prior to disposing the electrical compo-nent over the third layer, wherein an additional 2DEG segment is formed at the interface between the first layer and the second layer below each of the one or more openings in the third layer.
The method of claim 16, wherein the electrical com-ponent is an inductor.
The method of claim 16, wherein the substrate is a silicon-based substrate.
The method of claim 16, wherein forming the first 2DEG segment and the second 2DEG segment comprises: forming a trench through the 2DEG layer to produce the first 2DEG segment and the second 2DEG segment, wherein the trench comprises the gap; and forming a dielectric material in the trench.
The method of claim 16, wherein the substrate com-prises a high resistivity substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon electronic device with discontinuous 2DEG
GaN-on-silicon electrical component device with discontinuous 2DEG
Materials described outside the worked examples.
gallium nitride (buffer layer)
GaxN₁-x
gallium nitride (channel layer)
GayN₁-y
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a flowchart of an example method of fabricating an electrical component device in accordance with some embodiments;
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,432,959 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a block diagram of an electronic device in which aspects of the disclosure may be practiced in accordance with some embodiments; 55
FIG. 2 depicts a flowchart of an example method of fabricating an electrical component device in accordance with some embodiments;
FIG. 3 illustrates a cross-sectional view of a first example of an electrical component device in accordance with some 60 embodiments;
FIG. 4 depicts a cross-sectional view of a second example of an electrical component device in accordance with some embodiment;
FIG. 5 illustrates a flowchart of a method of fabricating 65 the first and the second embodiments of the electrical component device shown in
FIGS. 6A-6D depict cross-sectional views of a method of fabricating a third example of an electrical component device in accordance with some embodiments;
FIGS. 7-10 illustrate cross-sectional views of alternate on-chip inductors to the third example of the electrical component device shown in
FIG. 8. However, in
FIG. 9, the trench 900 is formed through the second layer 308, the 2DEG layer 500, the first layer 306, and the buffer layer 302. As shown in
FIG. 10, the trench 1000 is formed through the second layer 308, the 2DEG layer 500, the first layer 306, and the buffer layer 302 and into a portion of the …
FIGS. 11A-11D depict cross-sectional views of a method of fabricating a fourth example of an electrical component device in accordance with some embodiments;
FIGS. 12-14 illustrate example inductors that are suitable for use in an electrical component device in accordance with some embodiments; and
FIG. 13). The inductor can have two terminals or more 5 terminals. For example, the example inductor 1200 in
FIG. 14 has four terminals 1402, 1404, 1406, 1408. Additionally, an inductor can be composed of a single metal layer or multiple metal layers. For example, the …
FIG. 15 depicts a block diagram of a computing device with which aspects of the disclosure may be practiced in accordance with some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a first electrical component; an electrical component device comprising: a buffer layer disposed over a frontside surface of a substrate; a first layer of gallium nitride disposed over the buffer layer; 55 a second layer of aluminum gallium nitride disposed over the first layer, wherein a two-dimensional elec-tron gas (2DEG) layer is disposed at an interface between the first layer and the second layer, and the second layer comprises a first 2DEG segment and a 60 second 2DEG segment and a gap between the first and the second 2DEG segments; a second electrical component positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments, wherein the second electrical component is operably connected to the first electrical component; and B₂ a third layer of p-doped gallium nitride disposed over only a portion of the second layer, wherein the gap between the first 2DEG segment and the second 2DEG segment corresponds to a contour of the p-doped gallium nitride layer.
The electronic device of claim 1, further comprising a trench formed from a backside surface of the substrate through the substrate, through the buffer layer, through the first layer, and through the 2DEG layer, wherein the trench creates the gap in the 2DEG layer.
The electronic device of claim 1, wherein the substrate is a silicon-based substrate.
The electronic device of claim 1, wherein: the first layer of gallium nitride is a first layer of gallium nitride (GayN₁-y); and the buffer layer is a layer of gallium nitride (GaxN₁-x).
The electronic device of claim 1, wherein the buffer layer is configured to gradually transfer a crystal lattice from the substrate to the buffer layer for lattice matching.
The electronic device of claim 1, wherein the electronic device is a printed circuit board.
The electronic device of claim 1, wherein the electronic device is a monolithic microwave integrated circuit or a microwave integrated circuit.
The electronic device of claim 1, wherein the first electrical component comprises an inductor.
An electrical component device, comprising: a buffer layer disposed over a high resistivity substrate; a first layer of gallium nitride disposed over the buffer layer; a second layer of aluminum gallium nitride disposed over the first layer, wherein a layer of a two-dimensional electron gas (2DEG) formed at an interface between the first layer and the second layer comprises a first 2DEG segment and a second 2DEG segment and a gap between the first and the second 2DEG segments; and an electrical component positioned over the second layer and over at least a portion of the gap between the first and the second 2DEG segments.
The electrical component device of claim 10, further comprising a third layer of p-doped gallium nitride disposed over only a portion of the second layer, wherein the gap between the first 2DEG segment and the second 2DEG segment corresponds to a contour of the p-doped gallium nitride layer.
The electrical component device of claim 10, further comprising a trench formed from a backside through the substrate, the buffer layer, the first layer, and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.
The electrical component device of claim 10, further comprising a trench formed from the frontside through the second layer and the layer of 2DEG, wherein the gap between the first and the second 2DEG segments is the trench.
The electrical component device of claim 10, wherein the electrical component comprises an inductor.
A method of fabricating an electrical component device, comprising: forming a buffer layer over a substrate; forming a first layer of gallium nitride over the buffer layer; 11 12 forming a second layer of aluminum gallium nitride over the first layer; forming a first two dimensional electron gas (2DEG) segment and a second 2DEG segment at an interface between the first layer and the second layer including forming a third layer of a p-doped gallium nitride over a portion of the second layer, wherein the first 2DEG segment is separated from the second 2DEG segment by a gap that corresponds to a contour of the third layer; disposing an electrical component over the second layer, over the third layer and over at least a portion of the gap; and patterning the third layer to form one or more openings in the third layer prior to disposing the electrical compo-nent over the third layer, wherein an additional 2DEG segment is formed at the interface between the first layer and the second layer below each of the one or more openings in the third layer.
The method of claim 16, wherein the electrical com-ponent is an inductor.
The method of claim 16, wherein the substrate is a silicon-based substrate.
The method of claim 16, wherein forming the first 2DEG segment and the second 2DEG segment comprises: forming a trench through the 2DEG layer to produce the first 2DEG segment and the second 2DEG segment, wherein the trench comprises the gap; and forming a dielectric material in the trench.
The method of claim 16, wherein the substrate com-prises a high resistivity substrate. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-silicon electronic device with discontinuous 2DEG
GaN-on-silicon electrical component device with discontinuous 2DEG
Materials described outside the worked examples.
gallium nitride (buffer layer)
GaxN₁-x
gallium nitride (channel layer)
GayN₁-y
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 depicts a flowchart of an example method of fabricating an electrical component device in accordance with some embodiments;
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
aluminum gallium nitride
AlGaN
p-doped gallium nitride
p-GaN
silicon-based substrate
dielectric material
high resistivity silicon substrate
FIG. 3 illustrates a cross-sectional view of a first example of an electrical component device in accordance with some 60 embodiments;
FIG. 4 depicts a cross-sectional view of a second example of an electrical component device in accordance with some embodiment;
FIG. 5 illustrates a flowchart of a method of fabricating 65 the first and the second embodiments of the electrical component device shown in
FIGS. 6A-6D depict cross-sectional views of a method of fabricating a third example of an electrical component device in accordance with some embodiments;
FIGS. 7-10 illustrate cross-sectional views of alternate on-chip inductors to the third example of the electrical component device shown in
FIGS. 11A-11D depict cross-sectional views of a method of fabricating a fourth example of an electrical component device in accordance with some embodiments;
FIGS. 12-14 illustrate example inductors that are suitable for use in an electrical component device in accordance with some embodiments; and
aluminum gallium nitride
AlGaN
p-doped gallium nitride
p-GaN
silicon-based substrate
dielectric material
high resistivity silicon substrate
FIG. 3 illustrates a cross-sectional view of a first example of an electrical component device in accordance with some 60 embodiments;
FIG. 4 depicts a cross-sectional view of a second example of an electrical component device in accordance with some embodiment;
FIG. 5 illustrates a flowchart of a method of fabricating 65 the first and the second embodiments of the electrical component device shown in
FIGS. 6A-6D depict cross-sectional views of a method of fabricating a third example of an electrical component device in accordance with some embodiments;
FIGS. 7-10 illustrate cross-sectional views of alternate on-chip inductors to the third example of the electrical component device shown in
FIGS. 11A-11D depict cross-sectional views of a method of fabricating a fourth example of an electrical component device in accordance with some embodiments;
FIGS. 12-14 illustrate example inductors that are suitable for use in an electrical component device in accordance with some embodiments; and
aluminum gallium nitride
AlGaN
p-doped gallium nitride
p-GaN
silicon-based substrate
dielectric material
high resistivity silicon substrate
FIG. 3 illustrates a cross-sectional view of a first example of an electrical component device in accordance with some 60 embodiments;
FIG. 4 depicts a cross-sectional view of a second example of an electrical component device in accordance with some embodiment;
FIG. 5 illustrates a flowchart of a method of fabricating 65 the first and the second embodiments of the electrical component device shown in
FIGS. 6A-6D depict cross-sectional views of a method of fabricating a third example of an electrical component device in accordance with some embodiments;
FIGS. 7-10 illustrate cross-sectional views of alternate on-chip inductors to the third example of the electrical component device shown in
FIGS. 11A-11D depict cross-sectional views of a method of fabricating a fourth example of an electrical component device in accordance with some embodiments;
FIGS. 12-14 illustrate example inductors that are suitable for use in an electrical component device in accordance with some embodiments; and
aluminum gallium nitride
AlGaN
p-doped gallium nitride
p-GaN
silicon-based substrate
dielectric material
high resistivity silicon substrate
FIG. 3 illustrates a cross-sectional view of a first example of an electrical component device in accordance with some 60 embodiments;
FIG. 4 depicts a cross-sectional view of a second example of an electrical component device in accordance with some embodiment;
FIG. 5 illustrates a flowchart of a method of fabricating 65 the first and the second embodiments of the electrical component device shown in
FIGS. 6A-6D depict cross-sectional views of a method of fabricating a third example of an electrical component device in accordance with some embodiments;
FIGS. 7-10 illustrate cross-sectional views of alternate on-chip inductors to the third example of the electrical component device shown in
FIGS. 11A-11D depict cross-sectional views of a method of fabricating a fourth example of an electrical component device in accordance with some embodiments;
FIGS. 12-14 illustrate example inductors that are suitable for use in an electrical component device in accordance with some embodiments; and