Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a simplified schematic of a half bridge power conversion circuit according to an embodiment of the inven- tion;
FIG. 2
FIG. 2 is a simplified schematic of the circuits within the 60 low side control circuit illustrated in
FIG. 3
FIG. 3 is a schematic of the first level shift transistor illustrated in
FIG. 4
FIG. 4 is a schematic of the level shift driver circuit illustrated in
FIG. 5
FIG. 5 is a schematic of the blanking pulse generator circuit illustrated in
FIG. 6
FIG. 6 is an example of waveforms within the blanking pulse generator illustrated in
FIG. 7
FIG. 7 is a schematic of the bootstrap transistor drive circuit illustrated in
FIG. 8
FIG. 8 is a block diagram for the low side transistor drive circuit illustrated in
FIG. 9
FIG. 9 is a schematic of the startup circuit illustrated in
FIG. 10
FIG. 10 is series of diode connected GaN-based enhance- ment-mode transistors that may be used as a diode clamp in the schematic of
FIG. 11
FIG. 11 is a schematic of the UVLO circuit illustrated in
FIG. 12
FIG. 12 is a schematic of the bootstrap capacitor charging circuit illustrated in
FIG. 13
FIG. 13 is a schematic of an alternative bootstrap capaci- tor charging circuit as compared to the circuit illustrated in
FIG. 14
FIG. 14 is a schematic of the high side logic and control circuit illustrated in
FIG. 15
FIG. 15 is a schematic of the first level shift receiver circuit illustrated in
FIG. 16
FIG. 16 is a schematic of the second level shift receiver circuit illustrated in
FIG. 17
FIG. 17 is a schematic of the pull up trigger circuit illustrated in
FIG. 18
FIG. 18 is a schematic of the high side UVLO circuit illustrated in
FIG. 19
FIG. 19 is a schematic of the high side transistor driver circuit illustrated in
FIG. 20
FIG. 20 is a schematic of a high side reference voltage generation circuit illustrated in
FIG. 21
FIG. 21 is a simplified schematic of a half bridge power conversion circuit according to another embodiment of the invention;
FIG. 22
FIG. 22 is a simplified schematic of the circuits within the low side control circuit illustrated in
FIG. 23
FIG. 23 is a schematic of the first level shift transistor illustrated in
FIG. 24
FIG. 24 is a schematic of the inverter/buffer circuit illustrated in
FIG. 25
FIG. 25 is a schematic of the on pulse generator circuit illustrated in
FIG. 26
FIG. 26 is a schematic of the off pulse generator circuit illustrated in
FIG. 27
FIG. 27 is a schematic of the blanking pulse generator circuit illustrated in
FIG. 28
FIG. 28 is a schematic of the low side transistor drive circuit illustrated in
FIG. 29
FIG. 29 is a simplified schematic of the circuits within the high side control circuit illustrated in
FIG. 30
FIG. 30 is a schematic of the level shift 1 receiver circuit illustrated in
FIG. 31
FIG. 31 is a schematic of level shift 2 receiver circuit illustrated in
FIG. 32
FIG. 32 is a schematic of the high side UVLO circuit illustrated in
FIG. 33
FIG. 33 is a schematic of the high side transistor driver circuit illustrated in
FIG. 34
FIG. 34 is a schematic of an electro-static discharge (ESD) clamp circuit according to an embodiment of the invention;
FIG. 35
FIG. 35 is a schematic of an electro-static discharge (ESD) clamp circuit according to an embodiment of the invention;
FIG. 36
FIG. 36 is an illustration of a portion of an electronic package according to an embodiment of the invention; and
FIG. 37
FIG. 37 is an illustration of the electronic package of
FIG. 38
FIG. 39
FIG. 40
FIG. 40 1. In further embodiments, high side transistor 2125 turn on and turn off processes may be controlled by the turn on of substantially similar level …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 17 dependent
1
IndependentGaNSimonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
An electronic device, comprising: a monolithic semiconductor substrate including at least one layer of gallium-nitride disposed on a layer of silicon; a plurality of flip-chip bumps; an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; a low-side circuit formed on the monolithic semiconduc-tor substrate, the low-side circuit comprising: a low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain; and a low-side transistor driver, arranged to control a con-ductivity state of the low-side transistor according to a first input signal; and 65 a high-side circuit formed on the monolithic semiconduc-tor substrate, the high-side circuit comprising: a high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain; and a high-side transistor driver arranged to control a conductivity state of the high-side transistor accord-ing to a second input signal; wherein the low-side drain is electrically connected to the high-side source to form a half-bridge circuit.
2
Dependent← claim 1composite stack of III-nitridesmonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the at least one layer of gallium-nitride is a composite stack of III-nitrides.
3
Dependent← claim 1AlGaNmonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the at least one layer of gallium-nitride includes a layer of aluminum gallium nitride.
4
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the low-side transistor and the high-side transistor are enhancement-mode transistors.
5
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 further comprising a level-shift circuit electrically coupled to the high-side tran-sistor driver.
6
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the electrical connection between the low-side drain and the high-side source is formed through the plurality of flip-chip bumps.
7
IndependentGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
An electronic device comprising: a gallium-nitride based monolithic semiconductor substrate; a plurality of flip-chip bumps coupled to the monolithic semiconductor substrate; an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; a low-side transistor disposed on the monolithic semicon-ductor substrate, the low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain wherein the low-side transistor is controlled by a low-side transistor driver circuit arranged to control a conductivity state of the low-side transistor in response to receiving a first input signal; and a high-side transistor disposed on the monolithic semiconductor substrate, the high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain wherein the high-side transistor is controlled by a high-side transistor driver circuit arranged to control a conductivity state of the high-side transistor in response to receiving a second input sig-nal; wherein the low-side drain is electrically connected to the high-side source forming a switch-node of a half-bridge circuit.
8
Dependent← claim 7composite stack of III-nitridesmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the gallium-nitride based monolithic semiconductor substrate includes a composite stack of III-nitrides.
9
Dependent← claim 7AlGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the gallium-nitride based monolithic semiconductor substrate includes a layer of aluminum gallium nitride.
10
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the low-side transistor and the high-side transistor are enhancement-mode transistors.
11
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 further comprising a level-shift circuit electrically coupled to the high-side tran-sistor driver circuit.
12
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the low-side transistor driver circuit is disposed on the monolithic semiconductor substrate.
13
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the high-side transistor driver circuit is disposed on the monolithic semiconductor substrate.
14
IndependentGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
A method of forming an electronic device, the method comprising: forming a monolithic semiconductor substrate comprising gallium-nitride; coupling a plurality of flip-chip bumps to the monolithic semiconductor substrate; forming an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; forming a low-side transistor within the monolithic semiconductor substrate, the low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain wherein the low-side transistor is controlled by a low-side transistor driver circuit arranged to control a conductivity state of the low-side transistor in response to receiving a first input signal; forming a high-side transistor within the monolithic semiconductor substrate, the high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain wherein the high-side transistor is controlled by a high-side transistor driver circuit arranged to control a conductivity state of the high-side transistor in response to receiving a second input sig-nal; and B₂ electrically connecting the low-side drain to the high-side source to form a switch-node of a half-bridge circuit.
15
Dependent← claim 14composite stack of III-nitrides
The method of claim 14 wherein the monolithic semiconductor substrate includes a composite stack of III-nitrides.
16
Dependent← claim 14AlGaN
The method of claim 14 wherein the monolithic semiconductor substrate includes a layer of aluminum gal-lium nitride.
17
Dependent← claim 14
The method of claim 14 wherein the low-side tran-sistor and the high-side transistor are enhancement-mode transistors.
18
Dependent← claim 14
The method of claim 14 further comprising forming a level-shift circuit electrically coupled to the high-side tran-sistor driver circuit.
19
Dependent← claim 14
The method of claim 14 further comprising forming the low-side transistor driver circuit within the monolithic semiconductor substrate.
20
Dependent← claim 14
The method of claim 14 further comprising forming the high-side transistor driver circuit within the monolithic semiconductor substrate. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
GaNactive semiconductor layer
Sibase substrate
monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
GaNactive semiconductor layer
Materials
Materials described outside the worked examples.
gallium nitride
GaN
Semiconductor Substrate Material
silicon
Si
Substrate Base Layer
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
fet electrical
Fet Electrical
FIG. 3 is a schematic of the first level shift transistor illustrated in
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a simplified schematic of a half bridge power conversion circuit according to an embodiment of the inven- tion;
FIG. 2
FIG. 2 is a simplified schematic of the circuits within the 60 low side control circuit illustrated in
FIG. 3
FIG. 3 is a schematic of the first level shift transistor illustrated in
FIG. 4
FIG. 4 is a schematic of the level shift driver circuit illustrated in
FIG. 5
FIG. 5 is a schematic of the blanking pulse generator circuit illustrated in
FIG. 6
FIG. 6 is an example of waveforms within the blanking pulse generator illustrated in
FIG. 7
FIG. 7 is a schematic of the bootstrap transistor drive circuit illustrated in
FIG. 8
FIG. 8 is a block diagram for the low side transistor drive circuit illustrated in
FIG. 9
FIG. 9 is a schematic of the startup circuit illustrated in
FIG. 10
FIG. 10 is series of diode connected GaN-based enhance- ment-mode transistors that may be used as a diode clamp in the schematic of
FIG. 11
FIG. 11 is a schematic of the UVLO circuit illustrated in
FIG. 12
FIG. 12 is a schematic of the bootstrap capacitor charging circuit illustrated in
FIG. 13
FIG. 13 is a schematic of an alternative bootstrap capaci- tor charging circuit as compared to the circuit illustrated in
FIG. 14
FIG. 14 is a schematic of the high side logic and control circuit illustrated in
FIG. 15
FIG. 15 is a schematic of the first level shift receiver circuit illustrated in
FIG. 16
FIG. 16 is a schematic of the second level shift receiver circuit illustrated in
FIG. 17
FIG. 17 is a schematic of the pull up trigger circuit illustrated in
FIG. 18
FIG. 18 is a schematic of the high side UVLO circuit illustrated in
FIG. 19
FIG. 19 is a schematic of the high side transistor driver circuit illustrated in
FIG. 20
FIG. 20 is a schematic of a high side reference voltage generation circuit illustrated in
FIG. 21
FIG. 21 is a simplified schematic of a half bridge power conversion circuit according to another embodiment of the invention;
FIG. 22
FIG. 22 is a simplified schematic of the circuits within the low side control circuit illustrated in
FIG. 23
FIG. 23 is a schematic of the first level shift transistor illustrated in
FIG. 24
FIG. 24 is a schematic of the inverter/buffer circuit illustrated in
FIG. 25
FIG. 25 is a schematic of the on pulse generator circuit illustrated in
FIG. 26
FIG. 26 is a schematic of the off pulse generator circuit illustrated in
FIG. 27
FIG. 27 is a schematic of the blanking pulse generator circuit illustrated in
FIG. 28
FIG. 28 is a schematic of the low side transistor drive circuit illustrated in
FIG. 29
FIG. 29 is a simplified schematic of the circuits within the high side control circuit illustrated in
FIG. 30
FIG. 30 is a schematic of the level shift 1 receiver circuit illustrated in
FIG. 31
FIG. 31 is a schematic of level shift 2 receiver circuit illustrated in
FIG. 32
FIG. 32 is a schematic of the high side UVLO circuit illustrated in
FIG. 33
FIG. 33 is a schematic of the high side transistor driver circuit illustrated in
FIG. 34
FIG. 34 is a schematic of an electro-static discharge (ESD) clamp circuit according to an embodiment of the invention;
FIG. 35
FIG. 35 is a schematic of an electro-static discharge (ESD) clamp circuit according to an embodiment of the invention;
FIG. 36
FIG. 36 is an illustration of a portion of an electronic package according to an embodiment of the invention; and
FIG. 37
FIG. 37 is an illustration of the electronic package of
FIG. 38
FIG. 39
FIG. 40
FIG. 40 1. In further embodiments, high side transistor 2125 turn on and turn off processes may be controlled by the turn on of substantially similar level …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 17 dependent
1
IndependentGaNSimonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
An electronic device, comprising: a monolithic semiconductor substrate including at least one layer of gallium-nitride disposed on a layer of silicon; a plurality of flip-chip bumps; an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; a low-side circuit formed on the monolithic semiconduc-tor substrate, the low-side circuit comprising: a low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain; and a low-side transistor driver, arranged to control a con-ductivity state of the low-side transistor according to a first input signal; and 65 a high-side circuit formed on the monolithic semiconduc-tor substrate, the high-side circuit comprising: a high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain; and a high-side transistor driver arranged to control a conductivity state of the high-side transistor accord-ing to a second input signal; wherein the low-side drain is electrically connected to the high-side source to form a half-bridge circuit.
2
Dependent← claim 1composite stack of III-nitridesmonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the at least one layer of gallium-nitride is a composite stack of III-nitrides.
3
Dependent← claim 1AlGaNmonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the at least one layer of gallium-nitride includes a layer of aluminum gallium nitride.
4
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the low-side transistor and the high-side transistor are enhancement-mode transistors.
5
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 further comprising a level-shift circuit electrically coupled to the high-side tran-sistor driver.
6
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the electrical connection between the low-side drain and the high-side source is formed through the plurality of flip-chip bumps.
7
IndependentGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
An electronic device comprising: a gallium-nitride based monolithic semiconductor substrate; a plurality of flip-chip bumps coupled to the monolithic semiconductor substrate; an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; a low-side transistor disposed on the monolithic semicon-ductor substrate, the low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain wherein the low-side transistor is controlled by a low-side transistor driver circuit arranged to control a conductivity state of the low-side transistor in response to receiving a first input signal; and a high-side transistor disposed on the monolithic semiconductor substrate, the high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain wherein the high-side transistor is controlled by a high-side transistor driver circuit arranged to control a conductivity state of the high-side transistor in response to receiving a second input sig-nal; wherein the low-side drain is electrically connected to the high-side source forming a switch-node of a half-bridge circuit.
8
Dependent← claim 7composite stack of III-nitridesmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the gallium-nitride based monolithic semiconductor substrate includes a composite stack of III-nitrides.
9
Dependent← claim 7AlGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the gallium-nitride based monolithic semiconductor substrate includes a layer of aluminum gallium nitride.
10
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the low-side transistor and the high-side transistor are enhancement-mode transistors.
11
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 further comprising a level-shift circuit electrically coupled to the high-side tran-sistor driver circuit.
12
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the low-side transistor driver circuit is disposed on the monolithic semiconductor substrate.
13
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the high-side transistor driver circuit is disposed on the monolithic semiconductor substrate.
14
IndependentGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
A method of forming an electronic device, the method comprising: forming a monolithic semiconductor substrate comprising gallium-nitride; coupling a plurality of flip-chip bumps to the monolithic semiconductor substrate; forming an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; forming a low-side transistor within the monolithic semiconductor substrate, the low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain wherein the low-side transistor is controlled by a low-side transistor driver circuit arranged to control a conductivity state of the low-side transistor in response to receiving a first input signal; forming a high-side transistor within the monolithic semiconductor substrate, the high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain wherein the high-side transistor is controlled by a high-side transistor driver circuit arranged to control a conductivity state of the high-side transistor in response to receiving a second input sig-nal; and B₂ electrically connecting the low-side drain to the high-side source to form a switch-node of a half-bridge circuit.
15
Dependent← claim 14composite stack of III-nitrides
The method of claim 14 wherein the monolithic semiconductor substrate includes a composite stack of III-nitrides.
16
Dependent← claim 14AlGaN
The method of claim 14 wherein the monolithic semiconductor substrate includes a layer of aluminum gal-lium nitride.
17
Dependent← claim 14
The method of claim 14 wherein the low-side tran-sistor and the high-side transistor are enhancement-mode transistors.
18
Dependent← claim 14
The method of claim 14 further comprising forming a level-shift circuit electrically coupled to the high-side tran-sistor driver circuit.
19
Dependent← claim 14
The method of claim 14 further comprising forming the low-side transistor driver circuit within the monolithic semiconductor substrate.
20
Dependent← claim 14
The method of claim 14 further comprising forming the high-side transistor driver circuit within the monolithic semiconductor substrate. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
GaNactive semiconductor layer
Sibase substrate
monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
GaNactive semiconductor layer
Materials
Materials described outside the worked examples.
gallium nitride
GaN
Semiconductor Substrate Material
silicon
Si
Substrate Base Layer
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
fet electrical
Fet Electrical
FIG. 3 is a schematic of the first level shift transistor illustrated in
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a simplified schematic of a half bridge power conversion circuit according to an embodiment of the inven- tion;
FIG. 2
FIG. 2 is a simplified schematic of the circuits within the 60 low side control circuit illustrated in
FIG. 3
FIG. 3 is a schematic of the first level shift transistor illustrated in
FIG. 4
FIG. 4 is a schematic of the level shift driver circuit illustrated in
FIG. 5
FIG. 5 is a schematic of the blanking pulse generator circuit illustrated in
FIG. 6
FIG. 6 is an example of waveforms within the blanking pulse generator illustrated in
FIG. 7
FIG. 7 is a schematic of the bootstrap transistor drive circuit illustrated in
FIG. 8
FIG. 8 is a block diagram for the low side transistor drive circuit illustrated in
FIG. 9
FIG. 9 is a schematic of the startup circuit illustrated in
FIG. 10
FIG. 10 is series of diode connected GaN-based enhance- ment-mode transistors that may be used as a diode clamp in the schematic of
FIG. 11
FIG. 11 is a schematic of the UVLO circuit illustrated in
FIG. 12
FIG. 12 is a schematic of the bootstrap capacitor charging circuit illustrated in
FIG. 13
FIG. 13 is a schematic of an alternative bootstrap capaci- tor charging circuit as compared to the circuit illustrated in
FIG. 14
FIG. 14 is a schematic of the high side logic and control circuit illustrated in
FIG. 15
FIG. 15 is a schematic of the first level shift receiver circuit illustrated in
FIG. 16
FIG. 16 is a schematic of the second level shift receiver circuit illustrated in
FIG. 17
FIG. 17 is a schematic of the pull up trigger circuit illustrated in
FIG. 18
FIG. 18 is a schematic of the high side UVLO circuit illustrated in
FIG. 19
FIG. 19 is a schematic of the high side transistor driver circuit illustrated in
FIG. 20
FIG. 20 is a schematic of a high side reference voltage generation circuit illustrated in
FIG. 21
FIG. 21 is a simplified schematic of a half bridge power conversion circuit according to another embodiment of the invention;
FIG. 22
FIG. 22 is a simplified schematic of the circuits within the low side control circuit illustrated in
FIG. 23
FIG. 23 is a schematic of the first level shift transistor illustrated in
FIG. 24
FIG. 24 is a schematic of the inverter/buffer circuit illustrated in
FIG. 25
FIG. 25 is a schematic of the on pulse generator circuit illustrated in
FIG. 26
FIG. 26 is a schematic of the off pulse generator circuit illustrated in
FIG. 27
FIG. 27 is a schematic of the blanking pulse generator circuit illustrated in
FIG. 28
FIG. 28 is a schematic of the low side transistor drive circuit illustrated in
FIG. 29
FIG. 29 is a simplified schematic of the circuits within the high side control circuit illustrated in
FIG. 30
FIG. 30 is a schematic of the level shift 1 receiver circuit illustrated in
FIG. 31
FIG. 31 is a schematic of level shift 2 receiver circuit illustrated in
FIG. 32
FIG. 32 is a schematic of the high side UVLO circuit illustrated in
FIG. 33
FIG. 33 is a schematic of the high side transistor driver circuit illustrated in
FIG. 34
FIG. 34 is a schematic of an electro-static discharge (ESD) clamp circuit according to an embodiment of the invention;
FIG. 35
FIG. 35 is a schematic of an electro-static discharge (ESD) clamp circuit according to an embodiment of the invention;
FIG. 36
FIG. 36 is an illustration of a portion of an electronic package according to an embodiment of the invention; and
FIG. 37
FIG. 37 is an illustration of the electronic package of
FIG. 38
FIG. 39
FIG. 40
FIG. 40 1. In further embodiments, high side transistor 2125 turn on and turn off processes may be controlled by the turn on of substantially similar level …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 17 dependent
1
IndependentGaNSimonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
An electronic device, comprising: a monolithic semiconductor substrate including at least one layer of gallium-nitride disposed on a layer of silicon; a plurality of flip-chip bumps; an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; a low-side circuit formed on the monolithic semiconduc-tor substrate, the low-side circuit comprising: a low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain; and a low-side transistor driver, arranged to control a con-ductivity state of the low-side transistor according to a first input signal; and 65 a high-side circuit formed on the monolithic semiconduc-tor substrate, the high-side circuit comprising: a high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain; and a high-side transistor driver arranged to control a conductivity state of the high-side transistor accord-ing to a second input signal; wherein the low-side drain is electrically connected to the high-side source to form a half-bridge circuit.
2
Dependent← claim 1composite stack of III-nitridesmonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the at least one layer of gallium-nitride is a composite stack of III-nitrides.
3
Dependent← claim 1AlGaNmonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the at least one layer of gallium-nitride includes a layer of aluminum gallium nitride.
4
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the low-side transistor and the high-side transistor are enhancement-mode transistors.
5
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 further comprising a level-shift circuit electrically coupled to the high-side tran-sistor driver.
6
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the electrical connection between the low-side drain and the high-side source is formed through the plurality of flip-chip bumps.
7
IndependentGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
An electronic device comprising: a gallium-nitride based monolithic semiconductor substrate; a plurality of flip-chip bumps coupled to the monolithic semiconductor substrate; an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; a low-side transistor disposed on the monolithic semicon-ductor substrate, the low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain wherein the low-side transistor is controlled by a low-side transistor driver circuit arranged to control a conductivity state of the low-side transistor in response to receiving a first input signal; and a high-side transistor disposed on the monolithic semiconductor substrate, the high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain wherein the high-side transistor is controlled by a high-side transistor driver circuit arranged to control a conductivity state of the high-side transistor in response to receiving a second input sig-nal; wherein the low-side drain is electrically connected to the high-side source forming a switch-node of a half-bridge circuit.
8
Dependent← claim 7composite stack of III-nitridesmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the gallium-nitride based monolithic semiconductor substrate includes a composite stack of III-nitrides.
9
Dependent← claim 7AlGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the gallium-nitride based monolithic semiconductor substrate includes a layer of aluminum gallium nitride.
10
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the low-side transistor and the high-side transistor are enhancement-mode transistors.
11
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 further comprising a level-shift circuit electrically coupled to the high-side tran-sistor driver circuit.
12
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the low-side transistor driver circuit is disposed on the monolithic semiconductor substrate.
13
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the high-side transistor driver circuit is disposed on the monolithic semiconductor substrate.
14
IndependentGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
A method of forming an electronic device, the method comprising: forming a monolithic semiconductor substrate comprising gallium-nitride; coupling a plurality of flip-chip bumps to the monolithic semiconductor substrate; forming an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; forming a low-side transistor within the monolithic semiconductor substrate, the low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain wherein the low-side transistor is controlled by a low-side transistor driver circuit arranged to control a conductivity state of the low-side transistor in response to receiving a first input signal; forming a high-side transistor within the monolithic semiconductor substrate, the high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain wherein the high-side transistor is controlled by a high-side transistor driver circuit arranged to control a conductivity state of the high-side transistor in response to receiving a second input sig-nal; and B₂ electrically connecting the low-side drain to the high-side source to form a switch-node of a half-bridge circuit.
15
Dependent← claim 14composite stack of III-nitrides
The method of claim 14 wherein the monolithic semiconductor substrate includes a composite stack of III-nitrides.
16
Dependent← claim 14AlGaN
The method of claim 14 wherein the monolithic semiconductor substrate includes a layer of aluminum gal-lium nitride.
17
Dependent← claim 14
The method of claim 14 wherein the low-side tran-sistor and the high-side transistor are enhancement-mode transistors.
18
Dependent← claim 14
The method of claim 14 further comprising forming a level-shift circuit electrically coupled to the high-side tran-sistor driver circuit.
19
Dependent← claim 14
The method of claim 14 further comprising forming the low-side transistor driver circuit within the monolithic semiconductor substrate.
20
Dependent← claim 14
The method of claim 14 further comprising forming the high-side transistor driver circuit within the monolithic semiconductor substrate. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
GaNactive semiconductor layer
Sibase substrate
monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
GaNactive semiconductor layer
Materials
Materials described outside the worked examples.
gallium nitride
GaN
Semiconductor Substrate Material
silicon
Si
Substrate Base Layer
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
fet electrical
Fet Electrical
FIG. 3 is a schematic of the first level shift transistor illustrated in
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 is a simplified schematic of a half bridge power conversion circuit according to an embodiment of the inven- tion;
FIG. 2
FIG. 2 is a simplified schematic of the circuits within the 60 low side control circuit illustrated in
FIG. 3
FIG. 3 is a schematic of the first level shift transistor illustrated in
FIG. 4
FIG. 4 is a schematic of the level shift driver circuit illustrated in
FIG. 5
FIG. 5 is a schematic of the blanking pulse generator circuit illustrated in
FIG. 6
FIG. 6 is an example of waveforms within the blanking pulse generator illustrated in
FIG. 7
FIG. 7 is a schematic of the bootstrap transistor drive circuit illustrated in
FIG. 8
FIG. 8 is a block diagram for the low side transistor drive circuit illustrated in
FIG. 9
FIG. 9 is a schematic of the startup circuit illustrated in
FIG. 10
FIG. 10 is series of diode connected GaN-based enhance- ment-mode transistors that may be used as a diode clamp in the schematic of
FIG. 11
FIG. 11 is a schematic of the UVLO circuit illustrated in
FIG. 12
FIG. 12 is a schematic of the bootstrap capacitor charging circuit illustrated in
FIG. 13
FIG. 13 is a schematic of an alternative bootstrap capaci- tor charging circuit as compared to the circuit illustrated in
FIG. 14
FIG. 14 is a schematic of the high side logic and control circuit illustrated in
FIG. 15
FIG. 15 is a schematic of the first level shift receiver circuit illustrated in
FIG. 16
FIG. 16 is a schematic of the second level shift receiver circuit illustrated in
FIG. 17
FIG. 17 is a schematic of the pull up trigger circuit illustrated in
FIG. 18
FIG. 18 is a schematic of the high side UVLO circuit illustrated in
FIG. 19
FIG. 19 is a schematic of the high side transistor driver circuit illustrated in
FIG. 20
FIG. 20 is a schematic of a high side reference voltage generation circuit illustrated in
FIG. 21
FIG. 21 is a simplified schematic of a half bridge power conversion circuit according to another embodiment of the invention;
FIG. 22
FIG. 22 is a simplified schematic of the circuits within the low side control circuit illustrated in
FIG. 23
FIG. 23 is a schematic of the first level shift transistor illustrated in
FIG. 24
FIG. 24 is a schematic of the inverter/buffer circuit illustrated in
FIG. 25
FIG. 25 is a schematic of the on pulse generator circuit illustrated in
FIG. 26
FIG. 26 is a schematic of the off pulse generator circuit illustrated in
FIG. 27
FIG. 27 is a schematic of the blanking pulse generator circuit illustrated in
FIG. 28
FIG. 28 is a schematic of the low side transistor drive circuit illustrated in
FIG. 29
FIG. 29 is a simplified schematic of the circuits within the high side control circuit illustrated in
FIG. 30
FIG. 30 is a schematic of the level shift 1 receiver circuit illustrated in
FIG. 31
FIG. 31 is a schematic of level shift 2 receiver circuit illustrated in
FIG. 32
FIG. 32 is a schematic of the high side UVLO circuit illustrated in
FIG. 33
FIG. 33 is a schematic of the high side transistor driver circuit illustrated in
FIG. 34
FIG. 34 is a schematic of an electro-static discharge (ESD) clamp circuit according to an embodiment of the invention;
FIG. 35
FIG. 35 is a schematic of an electro-static discharge (ESD) clamp circuit according to an embodiment of the invention;
FIG. 36
FIG. 36 is an illustration of a portion of an electronic package according to an embodiment of the invention; and
FIG. 37
FIG. 37 is an illustration of the electronic package of
FIG. 38
FIG. 39
FIG. 40
FIG. 40 1. In further embodiments, high side transistor 2125 turn on and turn off processes may be controlled by the turn on of substantially similar level …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
3 independent · 17 dependent
1
IndependentGaNSimonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
An electronic device, comprising: a monolithic semiconductor substrate including at least one layer of gallium-nitride disposed on a layer of silicon; a plurality of flip-chip bumps; an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; a low-side circuit formed on the monolithic semiconduc-tor substrate, the low-side circuit comprising: a low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain; and a low-side transistor driver, arranged to control a con-ductivity state of the low-side transistor according to a first input signal; and 65 a high-side circuit formed on the monolithic semiconduc-tor substrate, the high-side circuit comprising: a high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain; and a high-side transistor driver arranged to control a conductivity state of the high-side transistor accord-ing to a second input signal; wherein the low-side drain is electrically connected to the high-side source to form a half-bridge circuit.
2
Dependent← claim 1composite stack of III-nitridesmonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the at least one layer of gallium-nitride is a composite stack of III-nitrides.
3
Dependent← claim 1AlGaNmonolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the at least one layer of gallium-nitride includes a layer of aluminum gallium nitride.
4
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the low-side transistor and the high-side transistor are enhancement-mode transistors.
5
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 further comprising a level-shift circuit electrically coupled to the high-side tran-sistor driver.
6
Dependent← claim 1monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
The electronic device of claim 1 wherein the electrical connection between the low-side drain and the high-side source is formed through the plurality of flip-chip bumps.
7
IndependentGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
An electronic device comprising: a gallium-nitride based monolithic semiconductor substrate; a plurality of flip-chip bumps coupled to the monolithic semiconductor substrate; an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; a low-side transistor disposed on the monolithic semicon-ductor substrate, the low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain wherein the low-side transistor is controlled by a low-side transistor driver circuit arranged to control a conductivity state of the low-side transistor in response to receiving a first input signal; and a high-side transistor disposed on the monolithic semiconductor substrate, the high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain wherein the high-side transistor is controlled by a high-side transistor driver circuit arranged to control a conductivity state of the high-side transistor in response to receiving a second input sig-nal; wherein the low-side drain is electrically connected to the high-side source forming a switch-node of a half-bridge circuit.
8
Dependent← claim 7composite stack of III-nitridesmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the gallium-nitride based monolithic semiconductor substrate includes a composite stack of III-nitrides.
9
Dependent← claim 7AlGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the gallium-nitride based monolithic semiconductor substrate includes a layer of aluminum gallium nitride.
10
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the low-side transistor and the high-side transistor are enhancement-mode transistors.
11
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 further comprising a level-shift circuit electrically coupled to the high-side tran-sistor driver circuit.
12
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the low-side transistor driver circuit is disposed on the monolithic semiconductor substrate.
13
Dependent← claim 7monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
The electronic device of claim 7 wherein the high-side transistor driver circuit is disposed on the monolithic semiconductor substrate.
14
IndependentGaNmonolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
A method of forming an electronic device, the method comprising: forming a monolithic semiconductor substrate comprising gallium-nitride; coupling a plurality of flip-chip bumps to the monolithic semiconductor substrate; forming an under-voltage lock-out circuit formed on the monolithic semiconductor substrate; forming a low-side transistor within the monolithic semiconductor substrate, the low-side transistor including a low-side transistor control gate, a low-side source, and a low-side drain wherein the low-side transistor is controlled by a low-side transistor driver circuit arranged to control a conductivity state of the low-side transistor in response to receiving a first input signal; forming a high-side transistor within the monolithic semiconductor substrate, the high-side transistor including a high-side transistor control gate, a high-side source, and a high-side drain wherein the high-side transistor is controlled by a high-side transistor driver circuit arranged to control a conductivity state of the high-side transistor in response to receiving a second input sig-nal; and B₂ electrically connecting the low-side drain to the high-side source to form a switch-node of a half-bridge circuit.
15
Dependent← claim 14composite stack of III-nitrides
The method of claim 14 wherein the monolithic semiconductor substrate includes a composite stack of III-nitrides.
16
Dependent← claim 14AlGaN
The method of claim 14 wherein the monolithic semiconductor substrate includes a layer of aluminum gal-lium nitride.
17
Dependent← claim 14
The method of claim 14 wherein the low-side tran-sistor and the high-side transistor are enhancement-mode transistors.
18
Dependent← claim 14
The method of claim 14 further comprising forming a level-shift circuit electrically coupled to the high-side tran-sistor driver circuit.
19
Dependent← claim 14
The method of claim 14 further comprising forming the low-side transistor driver circuit within the monolithic semiconductor substrate.
20
Dependent← claim 14
The method of claim 14 further comprising forming the high-side transistor driver circuit within the monolithic semiconductor substrate. ∗ ∗ ∗ ∗ ∗
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
monolithic flip-chip GaN half-bridge circuit (GaN-on-Si substrate)
GaNactive semiconductor layer
Sibase substrate
monolithic flip-chip GaN half-bridge circuit (GaN-based substrate)
GaNactive semiconductor layer
Materials
Materials described outside the worked examples.
gallium nitride
GaN
Semiconductor Substrate Material
silicon
Si
Substrate Base Layer
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
fet electrical
Fet Electrical
FIG. 3 is a schematic of the first level shift transistor illustrated in
FIG. 40 1. In further embodiments, high side transistor 2125 turn on and turn off processes may be controlled by the turn on of substantially similar level …
US 6,211,706 B16,211,706 B1 * 4/2001 Choi.................... H03K 17/063examiner
US 6,229,342 B16,229,342 B1 5/2001 Noble et al.
US 6,304,094 B26,304,094 B2 10/2001 Gilliam
US 6,307,399 B16,307,399 B1 10/2001 Lien et al.
US 6,317,000 B16,317,000 B1 11/2001 Ivanov et al.
US 6,353,345 B16,353,345 B1 3/2002 Yushan et al.
US 6,365,930 B16,365,930 B1 4/2002 Schillaci et al.
US 6,486,714 B26,486,714 B2 * 11/2002 Ushida.................. H02M 7/538examiner
US 6,590,914 B16,590,914 B1 7/2003 Tanase et al.
US 6,593,622 B26,593,622 B2 7/2003 Kinzer et al.
US 6,605,963 B26,605,963 B2 8/2003 Kitamoto et al.
US 6,614,633 B16,614,633 B1 9/2003 Kohno
US 6,636,024 B26,636,024 B2 * 10/2003 Zametzky............. H02M 1/088examiner
US 7,002,398 B27,002,398 B2 2/2006 Disney
US 7,068,486 B27,068,486 B2 * 6/2006 Feldtkeller......... H03K 17/6871examiner
US 7,227,763 B17,227,763 B1 * 6/2007 Noh................... H05B 41/2856examiner
US 7,254,000 B17,254,000 B1 8/2007 Smith et al.
US 7,323,912 B27,323,912 B2 1/2008 Nielsen
US 7,385,375 B27,385,375 B2 6/2008 Rozman
US 7,436,160 B27,436,160 B2 * 10/2008 Rusu.................... H03K 17/284examiner
US 7,619,303 B27,619,303 B2 11/2009 Bayan
US 7,705,476 B27,705,476 B2 4/2010 Bayan et al.
US 7,724,046 B27,724,046 B2 5/2010 Wendt et al.
US 7,808,222 B27,808,222 B2 10/2010 Ueunten
US 7,863,877 B27,863,877 B2 * 1/2011 Briere................. H02M 3/1588examiner
US 7,881,029 B17,881,029 B1 2/2011 Li et al.
US 7,884,583 B27,884,583 B2 * 2/2011 Lenz.................. H03K 17/6871examiner
US 7,928,950 B27,928,950 B2 4/2011 Osame et al.
US 8,044,699 B18,044,699 B1 10/2011 Kelly
US 8,093,373 B28,093,373 B2 1/2012 Van Alstine et al.
US 8,134,400 B28,134,400 B2 3/2012 Yamamoto
US 8,138,598 B28,138,598 B2 3/2012 Shiraishi et al.
US 8,144,441 B28,144,441 B2 3/2012 Ping et al.
US 8,203,380 B28,203,380 B2 6/2012 Hashimoto et al.
US 8,324,934 B18,324,934 B1 12/2012 Truong et al.
US 8,574,437 B28,574,437 B2 11/2013 Bergstrom et al.
US 8,593,211 B28,593,211 B2 11/2013 Forghani-Zadeh et al.
US 8,638,577 B28,638,577 B2 1/2014 Shiraishi et al.
US 8,659,275 B28,659,275 B2 2/2014 Bahramian
US 8,742,490 B28,742,490 B2 * 6/2014 Disney.............. H01L 23/49575examiner
US 8,754,509 B28,754,509 B2 6/2014 Grey
US 8,823,012 B28,823,012 B2 9/2014 Lidow et al.
US 8,970,262 B28,970,262 B2 3/2015 Weis et al.
US 9,064,722 B29,064,722 B2 6/2015 Bedell et al.
US 9,155,980 B29,155,980 B2 10/2015 Glad et al.
US 9,225,163 B29,225,163 B2 12/2015 Cao et al.
US 9,259,729 B29,259,729 B2 2/2016 Bergstrom et al.
US 9,264,022 B29,264,022 B2 2/2016 Kihara
US 9,276,413 B19,276,413 B1 3/2016 Zhang
US 9,278,297 B29,278,297 B2 3/2016 Bergstrom et al.
US 9,374,858 B29,374,858 B2 6/2016 Ni
US 9,401,612 B29,401,612 B2 7/2016 Kinzer et al.
US 9,413,166 B29,413,166 B2 8/2016 Rupp et al.
US 9,525,410 B29,525,410 B2 12/2016 Kim et al.
US 9,537,338 B29,537,338 B2 1/2017 Kinzer et al.
US 9,570,927 B29,570,927 B2 2/2017 Kinzer et al.
US 9,571,093 B29,571,093 B2 2/2017 Kinzer et al.
US 9,577,530 B19,577,530 B1 2/2017 Ribarich et al.
US 9,613,891 B29,613,891 B2 4/2017 Kinzer
US 9,685,869 B19,685,869 B1 6/2017 Kinzer et al.
US 9,712,058 B19,712,058 B1 7/2017 Newlin
US 9,716,395 B29,716,395 B2 7/2017 Kinzer et al.
US 9,722,609 B29,722,609 B2 8/2017 Kinzer et al.
US 9,831,867 B19,831,867 B1 11/2017 Kinzer et al.
US 9,859,732 B29,859,732 B2 1/2018 Kinzer et al.
US 9,929,652 B19,929,652 B1 3/2018 Ribarich et al.
US 9,960,620 B29,960,620 B2 5/2018 Kinzer et al.
US 9,960,764 B29,960,764 B2 5/2018 Kinzer et al.
US 10,084,448 B210,084,448 B2 9/2018 Godycki
US 10,135,275 B210,135,275 B2 11/2018 Kinzer et al.
US 10,170,922 B110,170,922 B1 1/2019 Kinzer et al.
US 10,269,687 B210,269,687 B2 4/2019 Kinzer
US 10,277,048 B210,277,048 B2 4/2019 Kinzer et al.
US 10,305,472 B110,305,472 B1 5/2019 Kinzer et al.
US 10,333,327 B210,333,327 B2 6/2019 Kinzer et al.
US 10,396,579 B210,396,579 B2 8/2019 Kinzer et al.
US 10,530,169 B210,530,169 B2 1/2020 Kinzer et al.
US 10,536,140 B110,536,140 B1 1/2020 Ribarich et al.
US 10,897,142 B210,897,142 B2 1/2021 Kinzer et al.
US 10,910,843 B210,910,843 B2 2/2021 Kinzer et al.
US 10,944,270 B110,944,270 B1 3/2021 Kinzer et al.
US 11,404,884 B211,404,884 B2 8/2022 Kinzer et al.
US 11,545,838 B211,545,838 B2 1/2023 Kinzer et al.
US 11,605,955 B211,605,955 B2 3/2023 Kinzer et al.
US 11,757,290 B211,757,290 B2 9/2023 Kinzer et al.
US 11,770,010 B211,770,010 B2 9/2023 Kinzer et al.
US 2003/0067339 A12003/0067339 A1 4/2003 Yamamoto
US 2004/0182915 A12004/0182915 A1 * 9/2004 Bachman................ H01L 24/05examiner
US 2005/0134533 A12005/0134533 A1 6/2005 Sasada et al.
US 2005/0151236 A12005/0151236 A1 7/2005 Oliver et al.
US 2005/0219017 A12005/0219017 A1 10/2005 Shirakawa
US 2005/0280141 A12005/0280141 A1 * 12/2005 Zhang................. H01L 23/3128examiner
US 2006/0034107 A12006/0034107 A1 * 2/2006 West..................... H02M 7/538examiner
US 2006/0256586 A12006/0256586 A1 11/2006 Ohshima et al.
US 2006/0256589 A12006/0256589 A1 11/2006 Choi
US 2006/0261862 A12006/0261862 A1 11/2006 Baszler et al.
US 2007/0063678 A12007/0063678 A1 3/2007 Yoshikawa
US 2007/0170465 A12007/0170465 A1 7/2007 Kwon et al.
US 2007/0285066 A12007/0285066 A1 12/2007 Lipcsei et al.
US 2008/0012542 A12008/0012542 A1 1/2008 Liu et al.
US 2008/0035959 A12008/0035959 A1 2/2008 Jiang
US 2008/0054979 A12008/0054979 A1 3/2008 Nagumo
US 2008/0062595 A12008/0062595 A1 3/2008 Ping et al.
US 2008/0136390 A12008/0136390 A1 6/2008 Briere
US 2008/0284482 A12008/0284482 A1 11/2008 Ishikawa
US 2009/0052216 A12009/0052216 A1 2/2009 Iwabuchi et al.
US 2009/0180304 A12009/0180304 A1 7/2009 Bahramian et al.
US 2009/0256617 A12009/0256617 A1 10/2009 Ochi
US 2009/0284288 A12009/0284288 A1 11/2009 Zhang et al.
US 2010/0019279 A12010/0019279 A1 1/2010 Chen et al.
US 2010/0025730 A12010/0025730 A1 2/2010 Heikman et al.
US 2010/0060320 A12010/0060320 A1 3/2010 Lee
US 2010/0140660 A12010/0140660 A1 6/2010 Wu et al.
US 2010/0253296 A12010/0253296 A1 10/2010 Huang et al.
US 2010/0258842 A12010/0258842 A1 10/2010 Lidow et al.
US 2010/0264975 A12010/0264975 A1 10/2010 Scott
US 2010/0315163 A12010/0315163 A1 12/2010 Takagi et al.
US 2010/0315748 A12010/0315748 A1 12/2010 Kwong et al.
US 2011/0025397 A12011/0025397 A1 2/2011 Wang et al.
US 2011/0049526 A12011/0049526 A1 3/2011 Chu et al.
US 2011/0157949 A12011/0157949 A1 6/2011 Bahramian
US 2011/0204928 A12011/0204928 A1 8/2011 Umezaki et al.
US 2011/0212585 A12011/0212585 A1 9/2011 Huang et al.
US 2011/0215746 A12011/0215746 A1 9/2011 Ikoshi et al.
US 2011/0216563 A12011/0216563 A1 9/2011 Ribarich
US 2011/0284862 A12011/0284862 A1 11/2011 Zhang
US 2011/0292632 A12011/0292632 A1 12/2011 Wen et al.
US 2011/0316494 A12011/0316494 A1 12/2011 Kitamura et al.
US 2012/0126406 A12012/0126406 A1 5/2012 Dix
US 2012/0126765 A12012/0126765 A1 5/2012 Stone et al.
US 2012/0175631 A12012/0175631 A1 7/2012 Idow et al.
US 2012/0220089 A12012/0220089 A1 8/2012 Imada et al.
US 2012/0274366 A12012/0274366 A1 11/2012 Briere
US 2012/0293231 A12012/0293231 A1 11/2012 Nishijima
US 2012/0319758 A12012/0319758 A1 12/2012 Kobayashi et al.
US 2013/0009674 A12013/0009674 A1 * 1/2013 Reese.................. H03K 5/2481examiner
US 2013/0051113 A12013/0051113 A1 2/2013 Kwon
US 2013/0056744 A12013/0056744 A1 3/2013 Mishra et al.
US 2013/0063123 A12013/0063123 A1 3/2013 Liang
US 2013/0063195 A12013/0063195 A1 3/2013 Youssef
US 2013/0074907 A12013/0074907 A1 3/2013 Saunders
US 2013/0076322 A12013/0076322 A1 3/2013 Tateno et al.
US 2013/0099768 A12013/0099768 A1 4/2013 Yonezawa et al.
US 2013/0119393 A12013/0119393 A1 5/2013 Zhu et al.
US 2013/0146891 A12013/0146891 A1 6/2013 Xin et al.
US 2013/0162923 A12013/0162923 A1 6/2013 Umezaki
US 2013/0193485 A12013/0193485 A1 8/2013 Akiyama et al.
US 2013/0194003 A12013/0194003 A1 8/2013 Takayama et al.
US 2013/0200938 A12013/0200938 A1 8/2013 Yao et al.
US 2013/0240893 A12013/0240893 A1 9/2013 Bedell et al.
US 2013/0241520 A12013/0241520 A1 9/2013 Kim et al.
US 2013/0241621 A12013/0241621 A1 9/2013 Forghani-Zadeh et al.
US 2013/0248931 A12013/0248931 A1 9/2013 Saito et al.
US 2013/0249001 A12013/0249001 A1 9/2013 Willmeroth et al.
US 2013/0249017 A12013/0249017 A1 9/2013 Kwon
US 2013/0249602 A12013/0249602 A1 9/2013 Mauder et al.
US 2013/0265029 A12013/0265029 A1 10/2013 Akiyama
US 2013/0285470 A12013/0285470 A1 10/2013 Koyama et al.
US 2013/0343143 A12013/0343143 A1 12/2013 Jung
US 2014/0001479 A12014/0001479 A1 1/2014 Kudymov
US 2014/0015586 A12014/0015586 A1 1/2014 Hirler et al.
US 2014/0048810 A12014/0048810 A1 2/2014 Umezaki et al.
US 2014/0070627 A12014/0070627 A1 3/2014 Briere et al.
US 2014/0070786 A12014/0070786 A1 3/2014 Guerra et al.
US 2014/0091311 A12014/0091311 A1 4/2014 Jeon et al.
US 2014/0092637 A12014/0092637 A1 4/2014 Minoura et al.
US 2014/0092638 A12014/0092638 A1 4/2014 Nishimori et al.
US 2014/0167069 A12014/0167069 A1 6/2014 Vielemeyer et al.
US 2014/0175454 A12014/0175454 A1 6/2014 Roberts et al.
US 2014/0191281 A12014/0191281 A1 7/2014 Yamaji
US 2014/0225162 A12014/0225162 A1 8/2014 Briere
US 2014/0266389 A12014/0266389 A1 9/2014 Sadwick et al.
US 2014/0300413 A12014/0300413 A1 10/2014 Høyerby et al.
US 2014/0337603 A12014/0337603 A1 11/2014 Yamazaki et al.
US 2014/0346522 A12014/0346522 A1 11/2014 Disney et al.
US 2014/0347116 A12014/0347116 A1 11/2014 Kihara et al.
US 2014/0347905 A12014/0347905 A1 11/2014 Takizawa
US 2014/0353673 A12014/0353673 A1 12/2014 Ito et al.
US 2014/0361343 A12014/0361343 A1 12/2014 Sriram
US 2014/0375372 A12014/0375372 A1 12/2014 Ikeda
US 2015/0034957 A12015/0034957 A1 2/2015 Chiu et al.
US 2015/0042918 A12015/0042918 A1 2/2015 Kimura et al.
US 2015/0091539 A12015/0091539 A1 * 4/2015 Norling................ H03K 17/284examiner
US 2015/0130428 A12015/0130428 A1 5/2015 Lee et al.
US 2015/0137134 A12015/0137134 A1 5/2015 Shah et al.
US 2015/0137135 A12015/0137135 A1 5/2015 Green et al.
US 2015/0160678 A12015/0160678 A1 6/2015 Kadowaki et al.
US 2015/0162424 A12015/0162424 A1 6/2015 Briere
US 2015/0162832 A12015/0162832 A1 * 6/2015 Briere.............. H03K 17/08116examiner
US 2015/0188448 A12015/0188448 A1 7/2015 Perreault et al.
US 2015/0255547 A12015/0255547 A1 9/2015 Yuan et al.
US 2015/0256157 A12015/0256157 A1 9/2015 Kozuma
US 2015/0263001 A12015/0263001 A1 9/2015 Saito et al.
US 2015/0263620 A12015/0263620 A1 9/2015 Huang
US 2015/0311196 A12015/0311196 A1 10/2015 Hirler et al.
US 2015/0357422 A12015/0357422 A1 12/2015 Liao
US 2015/0358003 A12015/0358003 A1 12/2015 Kihara
US 2016/0013179 A12016/0013179 A1 1/2016 Miura
US 2016/0056282 A12016/0056282 A1 2/2016 Yamaji
US 2016/0065086 A12016/0065086 A1 3/2016 Zojer et al.
US 2016/0079785 A12016/0079785 A1 3/2016 Kinzer et al.
US 2016/0079844 A12016/0079844 A1 3/2016 Kinzer et al.
US 2016/0079853 A12016/0079853 A1 3/2016 Kinzer et al.
US 2016/0079854 A12016/0079854 A1 3/2016 Kinzer et al.
US 2016/0079964 A12016/0079964 A1 3/2016 Kinzer et al.
US 2016/0079975 A12016/0079975 A1 3/2016 Kinzer et al.
US 2016/0079978 A12016/0079978 A1 3/2016 Kinzer et al.
US 2016/0079979 A12016/0079979 A1 3/2016 Kinzer et al.
US 2016/0086881 A12016/0086881 A1 3/2016 Standing
US 2016/0086938 A12016/0086938 A1 3/2016 Kinzer
US 2016/0118894 A12016/0118894 A1 4/2016 Zhang et al.
US 2016/0141352 A12016/0141352 A1 5/2016 Sung
US 2016/0173096 A12016/0173096 A1 6/2016 Inoue et al.
US 2016/0173097 A12016/0173097 A1 6/2016 Inoue et al.
US 2016/0240471 A12016/0240471 A1 8/2016 Klowak et al.
US 2016/0247748 A12016/0247748 A1 8/2016 Kinzer
US 2016/0277008 A12016/0277008 A1 9/2016 Green et al.
US 2016/0277012 A12016/0277012 A1 9/2016 Abesingha et al.
US 2016/0307826 A12016/0307826 A1 10/2016 Mcknight-Macneil et al.
US 2016/0315033 A12016/0315033 A1 10/2016 Otremba et al.
US 2016/0322116 A12016/0322116 A1 11/2016 Jang et al.
US 2016/0336926 A12016/0336926 A1 11/2016 Kinzer et al.
US 2016/0372920 A12016/0372920 A1 12/2016 Kinzer et al.
US 2017/0025267 A12017/0025267 A1 1/2017 Chu et al.
US 2017/0093283 A12017/0093283 A1 3/2017 Leoncini et al.
US 2017/0155391 A12017/0155391 A1 6/2017 Kinzer et al.
US 2017/0162483 A12017/0162483 A1 6/2017 Kinzer
US 2017/0163258 A12017/0163258 A1 6/2017 Kinzer et al.
US 2017/0324263 A12017/0324263 A1 11/2017 Kinzer et al.
US 2018/0013422 A12018/0013422 A1 1/2018 Leong et al.
US 2018/0102661 A12018/0102661 A1 4/2018 Kinzer et al.
US 2018/0159529 A12018/0159529 A1 6/2018 Reusch et al.
US 2018/0205373 A12018/0205373 A1 7/2018 Hokazono et al.
US 2020/0044648 A12020/0044648 A1 2/2020 Sharma et al.
US 2020/0153338 A12020/0153338 A1 5/2020 Ribarich et al.
CN 101572490 BCN 101572490 B 5/2012
CN 103872037 ACN 103872037 A 6/2014
CN 107005163 ACN 107005163 A 8/2017
CN 107005163 BCN 107005163 B 9/2018
EP 1120835 A2EP 1120835 A2 8/2001
EP 2763320 A1EP 2763320 A1 8/2014
GB 2244400 AGB 2244400 A 11/1991
JP 2000260451 AJP 2000260451 A 9/2000
JP 2001308462 AJP 2001308462 A 11/2001
JP 2013106027 AJP 2013106027 A 5/2013
TW I231094 BTW I231094 B 4/2005
TW I297503 BTW I297503 B 6/2008
TW I362749 BTW I362749 B 4/2012
TW 201240294 ATW 201240294 A 10/2012
TW I383587 BTW I383587 B 1/2013
TW 201312909 ATW 201312909 A 3/2013
TW 201315150 ATW 201315150 A 4/2013
TW 201401775 ATW 201401775 A 1/2014
TW 201404038 ATW 201404038 A 1/2014
TW 201416818 ATW 201416818 A 5/2014
TW 201622327 ATW 201622327 A 6/2016
TW 201629665 ATW 201629665 A 8/2016
TW 201804277 ATW 201804277 A 2/2018
TW I628780 BTW I628780 B 7/2018
WO 2014171190 A1WO 2014171190 A1 10/2014
WO 2016044474 A1WO 2016044474 A1 3/2016
WO 2016044479 A1WO 2016044479 A1 3/2016
WO 2016044480 A1WO 2016044480 A1 3/2016
WO 2016044481 A1WO 2016044481 A1 3/2016
Cited non-patent literature · 67
100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs. “100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs”, Texas Instruments, LM5113 5A, Available online at: http://www.ti. com/product/lm5113, Apr. 2013, pp. 1-26.
85V Half-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot—Through Protection. “85V Half-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot—Through Protection”, Micrel, Inc., Available online at: http://www.micrel.com/index.php/products/power-management-ics/mosfet-drevers/half-bridge/article/7.html, Nov. 11, 2013, pp. 1-25. “DA8801 Integrated 650V GaN Half Bridge Power IC”, Dialog Semiconductor,Available online at: http://www.dialogsemiconductor. com/products/da8801, Jan. 3, 2017, 6 pages. “Dialog Semiconductor Enters Gallium Nitride (GaN) Market with First Integrated Devices Targeting Fast Charging Power Adapters (News with Additional Features)”, Business Wire, A Berkshire Hathaway Company, Available Online at http://www.businesswire. com/news/home/20160824006260/en/Dialog-Semiconductor-Ente,Aug. 25, 2016, 3 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 15/838,026, “First Action Interview Pilot Program Pre-Interview Communication”, dated Mar. 30, 2018, 4 pages.
Notice of Allowance. U.S. Appl. No. 15/838,026, “Notice of Allowance”, dated Nov. 28, 2018, 9 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 15/903,398, “First Action Interview Pilot Program Pre-Interview Communication”, dated Jun. 4, 2018, 5 pages.
Notice of Allowance. U.S. Appl. No. 15/903,398, “Notice of Allowance”, dated Aug. 15, 2018, 19 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 16/550,272, “First Action Interview Pilot Program Pre-Interview Communication”, dated Apr. 17, 2020, 3 pages.
Notice of Allowance. U.S. Appl. No. 16/550,272, “Notice of Allowance”, dated Sep. 29, 2020, 8 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 16/699,081, “First Action Interview Pilot Program Pre-Interview Communication”, dated Oct. 26, 2021, 4 pages.
Notice of Allowance. U.S. Appl. No. 16/699,081, “Notice of Allowance”, dated Mar. 31, 2022, 8 pages.
Final Office Action. U.S. Appl. No. 17/811,797, “Final Office Action”, dated May 25, 2023, 13 pages.
FIG. 40 1. In further embodiments, high side transistor 2125 turn on and turn off processes may be controlled by the turn on of substantially similar level …
US 6,211,706 B16,211,706 B1 * 4/2001 Choi.................... H03K 17/063examiner
US 6,229,342 B16,229,342 B1 5/2001 Noble et al.
US 6,304,094 B26,304,094 B2 10/2001 Gilliam
US 6,307,399 B16,307,399 B1 10/2001 Lien et al.
US 6,317,000 B16,317,000 B1 11/2001 Ivanov et al.
US 6,353,345 B16,353,345 B1 3/2002 Yushan et al.
US 6,365,930 B16,365,930 B1 4/2002 Schillaci et al.
US 6,486,714 B26,486,714 B2 * 11/2002 Ushida.................. H02M 7/538examiner
US 6,590,914 B16,590,914 B1 7/2003 Tanase et al.
US 6,593,622 B26,593,622 B2 7/2003 Kinzer et al.
US 6,605,963 B26,605,963 B2 8/2003 Kitamoto et al.
US 6,614,633 B16,614,633 B1 9/2003 Kohno
US 6,636,024 B26,636,024 B2 * 10/2003 Zametzky............. H02M 1/088examiner
US 7,002,398 B27,002,398 B2 2/2006 Disney
US 7,068,486 B27,068,486 B2 * 6/2006 Feldtkeller......... H03K 17/6871examiner
US 7,227,763 B17,227,763 B1 * 6/2007 Noh................... H05B 41/2856examiner
US 7,254,000 B17,254,000 B1 8/2007 Smith et al.
US 7,323,912 B27,323,912 B2 1/2008 Nielsen
US 7,385,375 B27,385,375 B2 6/2008 Rozman
US 7,436,160 B27,436,160 B2 * 10/2008 Rusu.................... H03K 17/284examiner
US 7,619,303 B27,619,303 B2 11/2009 Bayan
US 7,705,476 B27,705,476 B2 4/2010 Bayan et al.
US 7,724,046 B27,724,046 B2 5/2010 Wendt et al.
US 7,808,222 B27,808,222 B2 10/2010 Ueunten
US 7,863,877 B27,863,877 B2 * 1/2011 Briere................. H02M 3/1588examiner
US 7,881,029 B17,881,029 B1 2/2011 Li et al.
US 7,884,583 B27,884,583 B2 * 2/2011 Lenz.................. H03K 17/6871examiner
US 7,928,950 B27,928,950 B2 4/2011 Osame et al.
US 8,044,699 B18,044,699 B1 10/2011 Kelly
US 8,093,373 B28,093,373 B2 1/2012 Van Alstine et al.
US 8,134,400 B28,134,400 B2 3/2012 Yamamoto
US 8,138,598 B28,138,598 B2 3/2012 Shiraishi et al.
US 8,144,441 B28,144,441 B2 3/2012 Ping et al.
US 8,203,380 B28,203,380 B2 6/2012 Hashimoto et al.
US 8,324,934 B18,324,934 B1 12/2012 Truong et al.
US 8,574,437 B28,574,437 B2 11/2013 Bergstrom et al.
US 8,593,211 B28,593,211 B2 11/2013 Forghani-Zadeh et al.
US 8,638,577 B28,638,577 B2 1/2014 Shiraishi et al.
US 8,659,275 B28,659,275 B2 2/2014 Bahramian
US 8,742,490 B28,742,490 B2 * 6/2014 Disney.............. H01L 23/49575examiner
US 8,754,509 B28,754,509 B2 6/2014 Grey
US 8,823,012 B28,823,012 B2 9/2014 Lidow et al.
US 8,970,262 B28,970,262 B2 3/2015 Weis et al.
US 9,064,722 B29,064,722 B2 6/2015 Bedell et al.
US 9,155,980 B29,155,980 B2 10/2015 Glad et al.
US 9,225,163 B29,225,163 B2 12/2015 Cao et al.
US 9,259,729 B29,259,729 B2 2/2016 Bergstrom et al.
US 9,264,022 B29,264,022 B2 2/2016 Kihara
US 9,276,413 B19,276,413 B1 3/2016 Zhang
US 9,278,297 B29,278,297 B2 3/2016 Bergstrom et al.
US 9,374,858 B29,374,858 B2 6/2016 Ni
US 9,401,612 B29,401,612 B2 7/2016 Kinzer et al.
US 9,413,166 B29,413,166 B2 8/2016 Rupp et al.
US 9,525,410 B29,525,410 B2 12/2016 Kim et al.
US 9,537,338 B29,537,338 B2 1/2017 Kinzer et al.
US 9,570,927 B29,570,927 B2 2/2017 Kinzer et al.
US 9,571,093 B29,571,093 B2 2/2017 Kinzer et al.
US 9,577,530 B19,577,530 B1 2/2017 Ribarich et al.
US 9,613,891 B29,613,891 B2 4/2017 Kinzer
US 9,685,869 B19,685,869 B1 6/2017 Kinzer et al.
US 9,712,058 B19,712,058 B1 7/2017 Newlin
US 9,716,395 B29,716,395 B2 7/2017 Kinzer et al.
US 9,722,609 B29,722,609 B2 8/2017 Kinzer et al.
US 9,831,867 B19,831,867 B1 11/2017 Kinzer et al.
US 9,859,732 B29,859,732 B2 1/2018 Kinzer et al.
US 9,929,652 B19,929,652 B1 3/2018 Ribarich et al.
US 9,960,620 B29,960,620 B2 5/2018 Kinzer et al.
US 9,960,764 B29,960,764 B2 5/2018 Kinzer et al.
US 10,084,448 B210,084,448 B2 9/2018 Godycki
US 10,135,275 B210,135,275 B2 11/2018 Kinzer et al.
US 10,170,922 B110,170,922 B1 1/2019 Kinzer et al.
US 10,269,687 B210,269,687 B2 4/2019 Kinzer
US 10,277,048 B210,277,048 B2 4/2019 Kinzer et al.
US 10,305,472 B110,305,472 B1 5/2019 Kinzer et al.
US 10,333,327 B210,333,327 B2 6/2019 Kinzer et al.
US 10,396,579 B210,396,579 B2 8/2019 Kinzer et al.
US 10,530,169 B210,530,169 B2 1/2020 Kinzer et al.
US 10,536,140 B110,536,140 B1 1/2020 Ribarich et al.
US 10,897,142 B210,897,142 B2 1/2021 Kinzer et al.
US 10,910,843 B210,910,843 B2 2/2021 Kinzer et al.
US 10,944,270 B110,944,270 B1 3/2021 Kinzer et al.
US 11,404,884 B211,404,884 B2 8/2022 Kinzer et al.
US 11,545,838 B211,545,838 B2 1/2023 Kinzer et al.
US 11,605,955 B211,605,955 B2 3/2023 Kinzer et al.
US 11,757,290 B211,757,290 B2 9/2023 Kinzer et al.
US 11,770,010 B211,770,010 B2 9/2023 Kinzer et al.
US 2003/0067339 A12003/0067339 A1 4/2003 Yamamoto
US 2004/0182915 A12004/0182915 A1 * 9/2004 Bachman................ H01L 24/05examiner
US 2005/0134533 A12005/0134533 A1 6/2005 Sasada et al.
US 2005/0151236 A12005/0151236 A1 7/2005 Oliver et al.
US 2005/0219017 A12005/0219017 A1 10/2005 Shirakawa
US 2005/0280141 A12005/0280141 A1 * 12/2005 Zhang................. H01L 23/3128examiner
US 2006/0034107 A12006/0034107 A1 * 2/2006 West..................... H02M 7/538examiner
US 2006/0256586 A12006/0256586 A1 11/2006 Ohshima et al.
US 2006/0256589 A12006/0256589 A1 11/2006 Choi
US 2006/0261862 A12006/0261862 A1 11/2006 Baszler et al.
US 2007/0063678 A12007/0063678 A1 3/2007 Yoshikawa
US 2007/0170465 A12007/0170465 A1 7/2007 Kwon et al.
US 2007/0285066 A12007/0285066 A1 12/2007 Lipcsei et al.
US 2008/0012542 A12008/0012542 A1 1/2008 Liu et al.
US 2008/0035959 A12008/0035959 A1 2/2008 Jiang
US 2008/0054979 A12008/0054979 A1 3/2008 Nagumo
US 2008/0062595 A12008/0062595 A1 3/2008 Ping et al.
US 2008/0136390 A12008/0136390 A1 6/2008 Briere
US 2008/0284482 A12008/0284482 A1 11/2008 Ishikawa
US 2009/0052216 A12009/0052216 A1 2/2009 Iwabuchi et al.
US 2009/0180304 A12009/0180304 A1 7/2009 Bahramian et al.
US 2009/0256617 A12009/0256617 A1 10/2009 Ochi
US 2009/0284288 A12009/0284288 A1 11/2009 Zhang et al.
US 2010/0019279 A12010/0019279 A1 1/2010 Chen et al.
US 2010/0025730 A12010/0025730 A1 2/2010 Heikman et al.
US 2010/0060320 A12010/0060320 A1 3/2010 Lee
US 2010/0140660 A12010/0140660 A1 6/2010 Wu et al.
US 2010/0253296 A12010/0253296 A1 10/2010 Huang et al.
US 2010/0258842 A12010/0258842 A1 10/2010 Lidow et al.
US 2010/0264975 A12010/0264975 A1 10/2010 Scott
US 2010/0315163 A12010/0315163 A1 12/2010 Takagi et al.
US 2010/0315748 A12010/0315748 A1 12/2010 Kwong et al.
US 2011/0025397 A12011/0025397 A1 2/2011 Wang et al.
US 2011/0049526 A12011/0049526 A1 3/2011 Chu et al.
US 2011/0157949 A12011/0157949 A1 6/2011 Bahramian
US 2011/0204928 A12011/0204928 A1 8/2011 Umezaki et al.
US 2011/0212585 A12011/0212585 A1 9/2011 Huang et al.
US 2011/0215746 A12011/0215746 A1 9/2011 Ikoshi et al.
US 2011/0216563 A12011/0216563 A1 9/2011 Ribarich
US 2011/0284862 A12011/0284862 A1 11/2011 Zhang
US 2011/0292632 A12011/0292632 A1 12/2011 Wen et al.
US 2011/0316494 A12011/0316494 A1 12/2011 Kitamura et al.
US 2012/0126406 A12012/0126406 A1 5/2012 Dix
US 2012/0126765 A12012/0126765 A1 5/2012 Stone et al.
US 2012/0175631 A12012/0175631 A1 7/2012 Idow et al.
US 2012/0220089 A12012/0220089 A1 8/2012 Imada et al.
US 2012/0274366 A12012/0274366 A1 11/2012 Briere
US 2012/0293231 A12012/0293231 A1 11/2012 Nishijima
US 2012/0319758 A12012/0319758 A1 12/2012 Kobayashi et al.
US 2013/0009674 A12013/0009674 A1 * 1/2013 Reese.................. H03K 5/2481examiner
US 2013/0051113 A12013/0051113 A1 2/2013 Kwon
US 2013/0056744 A12013/0056744 A1 3/2013 Mishra et al.
US 2013/0063123 A12013/0063123 A1 3/2013 Liang
US 2013/0063195 A12013/0063195 A1 3/2013 Youssef
US 2013/0074907 A12013/0074907 A1 3/2013 Saunders
US 2013/0076322 A12013/0076322 A1 3/2013 Tateno et al.
US 2013/0099768 A12013/0099768 A1 4/2013 Yonezawa et al.
US 2013/0119393 A12013/0119393 A1 5/2013 Zhu et al.
US 2013/0146891 A12013/0146891 A1 6/2013 Xin et al.
US 2013/0162923 A12013/0162923 A1 6/2013 Umezaki
US 2013/0193485 A12013/0193485 A1 8/2013 Akiyama et al.
US 2013/0194003 A12013/0194003 A1 8/2013 Takayama et al.
US 2013/0200938 A12013/0200938 A1 8/2013 Yao et al.
US 2013/0240893 A12013/0240893 A1 9/2013 Bedell et al.
US 2013/0241520 A12013/0241520 A1 9/2013 Kim et al.
US 2013/0241621 A12013/0241621 A1 9/2013 Forghani-Zadeh et al.
US 2013/0248931 A12013/0248931 A1 9/2013 Saito et al.
US 2013/0249001 A12013/0249001 A1 9/2013 Willmeroth et al.
US 2013/0249017 A12013/0249017 A1 9/2013 Kwon
US 2013/0249602 A12013/0249602 A1 9/2013 Mauder et al.
US 2013/0265029 A12013/0265029 A1 10/2013 Akiyama
US 2013/0285470 A12013/0285470 A1 10/2013 Koyama et al.
US 2013/0343143 A12013/0343143 A1 12/2013 Jung
US 2014/0001479 A12014/0001479 A1 1/2014 Kudymov
US 2014/0015586 A12014/0015586 A1 1/2014 Hirler et al.
US 2014/0048810 A12014/0048810 A1 2/2014 Umezaki et al.
US 2014/0070627 A12014/0070627 A1 3/2014 Briere et al.
US 2014/0070786 A12014/0070786 A1 3/2014 Guerra et al.
US 2014/0091311 A12014/0091311 A1 4/2014 Jeon et al.
US 2014/0092637 A12014/0092637 A1 4/2014 Minoura et al.
US 2014/0092638 A12014/0092638 A1 4/2014 Nishimori et al.
US 2014/0167069 A12014/0167069 A1 6/2014 Vielemeyer et al.
US 2014/0175454 A12014/0175454 A1 6/2014 Roberts et al.
US 2014/0191281 A12014/0191281 A1 7/2014 Yamaji
US 2014/0225162 A12014/0225162 A1 8/2014 Briere
US 2014/0266389 A12014/0266389 A1 9/2014 Sadwick et al.
US 2014/0300413 A12014/0300413 A1 10/2014 Høyerby et al.
US 2014/0337603 A12014/0337603 A1 11/2014 Yamazaki et al.
US 2014/0346522 A12014/0346522 A1 11/2014 Disney et al.
US 2014/0347116 A12014/0347116 A1 11/2014 Kihara et al.
US 2014/0347905 A12014/0347905 A1 11/2014 Takizawa
US 2014/0353673 A12014/0353673 A1 12/2014 Ito et al.
US 2014/0361343 A12014/0361343 A1 12/2014 Sriram
US 2014/0375372 A12014/0375372 A1 12/2014 Ikeda
US 2015/0034957 A12015/0034957 A1 2/2015 Chiu et al.
US 2015/0042918 A12015/0042918 A1 2/2015 Kimura et al.
US 2015/0091539 A12015/0091539 A1 * 4/2015 Norling................ H03K 17/284examiner
US 2015/0130428 A12015/0130428 A1 5/2015 Lee et al.
US 2015/0137134 A12015/0137134 A1 5/2015 Shah et al.
US 2015/0137135 A12015/0137135 A1 5/2015 Green et al.
US 2015/0160678 A12015/0160678 A1 6/2015 Kadowaki et al.
US 2015/0162424 A12015/0162424 A1 6/2015 Briere
US 2015/0162832 A12015/0162832 A1 * 6/2015 Briere.............. H03K 17/08116examiner
US 2015/0188448 A12015/0188448 A1 7/2015 Perreault et al.
US 2015/0255547 A12015/0255547 A1 9/2015 Yuan et al.
US 2015/0256157 A12015/0256157 A1 9/2015 Kozuma
US 2015/0263001 A12015/0263001 A1 9/2015 Saito et al.
US 2015/0263620 A12015/0263620 A1 9/2015 Huang
US 2015/0311196 A12015/0311196 A1 10/2015 Hirler et al.
US 2015/0357422 A12015/0357422 A1 12/2015 Liao
US 2015/0358003 A12015/0358003 A1 12/2015 Kihara
US 2016/0013179 A12016/0013179 A1 1/2016 Miura
US 2016/0056282 A12016/0056282 A1 2/2016 Yamaji
US 2016/0065086 A12016/0065086 A1 3/2016 Zojer et al.
US 2016/0079785 A12016/0079785 A1 3/2016 Kinzer et al.
US 2016/0079844 A12016/0079844 A1 3/2016 Kinzer et al.
US 2016/0079853 A12016/0079853 A1 3/2016 Kinzer et al.
US 2016/0079854 A12016/0079854 A1 3/2016 Kinzer et al.
US 2016/0079964 A12016/0079964 A1 3/2016 Kinzer et al.
US 2016/0079975 A12016/0079975 A1 3/2016 Kinzer et al.
US 2016/0079978 A12016/0079978 A1 3/2016 Kinzer et al.
US 2016/0079979 A12016/0079979 A1 3/2016 Kinzer et al.
US 2016/0086881 A12016/0086881 A1 3/2016 Standing
US 2016/0086938 A12016/0086938 A1 3/2016 Kinzer
US 2016/0118894 A12016/0118894 A1 4/2016 Zhang et al.
US 2016/0141352 A12016/0141352 A1 5/2016 Sung
US 2016/0173096 A12016/0173096 A1 6/2016 Inoue et al.
US 2016/0173097 A12016/0173097 A1 6/2016 Inoue et al.
US 2016/0240471 A12016/0240471 A1 8/2016 Klowak et al.
US 2016/0247748 A12016/0247748 A1 8/2016 Kinzer
US 2016/0277008 A12016/0277008 A1 9/2016 Green et al.
US 2016/0277012 A12016/0277012 A1 9/2016 Abesingha et al.
US 2016/0307826 A12016/0307826 A1 10/2016 Mcknight-Macneil et al.
US 2016/0315033 A12016/0315033 A1 10/2016 Otremba et al.
US 2016/0322116 A12016/0322116 A1 11/2016 Jang et al.
US 2016/0336926 A12016/0336926 A1 11/2016 Kinzer et al.
US 2016/0372920 A12016/0372920 A1 12/2016 Kinzer et al.
US 2017/0025267 A12017/0025267 A1 1/2017 Chu et al.
US 2017/0093283 A12017/0093283 A1 3/2017 Leoncini et al.
US 2017/0155391 A12017/0155391 A1 6/2017 Kinzer et al.
US 2017/0162483 A12017/0162483 A1 6/2017 Kinzer
US 2017/0163258 A12017/0163258 A1 6/2017 Kinzer et al.
US 2017/0324263 A12017/0324263 A1 11/2017 Kinzer et al.
US 2018/0013422 A12018/0013422 A1 1/2018 Leong et al.
US 2018/0102661 A12018/0102661 A1 4/2018 Kinzer et al.
US 2018/0159529 A12018/0159529 A1 6/2018 Reusch et al.
US 2018/0205373 A12018/0205373 A1 7/2018 Hokazono et al.
US 2020/0044648 A12020/0044648 A1 2/2020 Sharma et al.
US 2020/0153338 A12020/0153338 A1 5/2020 Ribarich et al.
CN 101572490 BCN 101572490 B 5/2012
CN 103872037 ACN 103872037 A 6/2014
CN 107005163 ACN 107005163 A 8/2017
CN 107005163 BCN 107005163 B 9/2018
EP 1120835 A2EP 1120835 A2 8/2001
EP 2763320 A1EP 2763320 A1 8/2014
GB 2244400 AGB 2244400 A 11/1991
JP 2000260451 AJP 2000260451 A 9/2000
JP 2001308462 AJP 2001308462 A 11/2001
JP 2013106027 AJP 2013106027 A 5/2013
TW I231094 BTW I231094 B 4/2005
TW I297503 BTW I297503 B 6/2008
TW I362749 BTW I362749 B 4/2012
TW 201240294 ATW 201240294 A 10/2012
TW I383587 BTW I383587 B 1/2013
TW 201312909 ATW 201312909 A 3/2013
TW 201315150 ATW 201315150 A 4/2013
TW 201401775 ATW 201401775 A 1/2014
TW 201404038 ATW 201404038 A 1/2014
TW 201416818 ATW 201416818 A 5/2014
TW 201622327 ATW 201622327 A 6/2016
TW 201629665 ATW 201629665 A 8/2016
TW 201804277 ATW 201804277 A 2/2018
TW I628780 BTW I628780 B 7/2018
WO 2014171190 A1WO 2014171190 A1 10/2014
WO 2016044474 A1WO 2016044474 A1 3/2016
WO 2016044479 A1WO 2016044479 A1 3/2016
WO 2016044480 A1WO 2016044480 A1 3/2016
WO 2016044481 A1WO 2016044481 A1 3/2016
Cited non-patent literature · 67
100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs. “100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs”, Texas Instruments, LM5113 5A, Available online at: http://www.ti. com/product/lm5113, Apr. 2013, pp. 1-26.
85V Half-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot—Through Protection. “85V Half-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot—Through Protection”, Micrel, Inc., Available online at: http://www.micrel.com/index.php/products/power-management-ics/mosfet-drevers/half-bridge/article/7.html, Nov. 11, 2013, pp. 1-25. “DA8801 Integrated 650V GaN Half Bridge Power IC”, Dialog Semiconductor,Available online at: http://www.dialogsemiconductor. com/products/da8801, Jan. 3, 2017, 6 pages. “Dialog Semiconductor Enters Gallium Nitride (GaN) Market with First Integrated Devices Targeting Fast Charging Power Adapters (News with Additional Features)”, Business Wire, A Berkshire Hathaway Company, Available Online at http://www.businesswire. com/news/home/20160824006260/en/Dialog-Semiconductor-Ente,Aug. 25, 2016, 3 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 15/838,026, “First Action Interview Pilot Program Pre-Interview Communication”, dated Mar. 30, 2018, 4 pages.
Notice of Allowance. U.S. Appl. No. 15/838,026, “Notice of Allowance”, dated Nov. 28, 2018, 9 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 15/903,398, “First Action Interview Pilot Program Pre-Interview Communication”, dated Jun. 4, 2018, 5 pages.
Notice of Allowance. U.S. Appl. No. 15/903,398, “Notice of Allowance”, dated Aug. 15, 2018, 19 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 16/550,272, “First Action Interview Pilot Program Pre-Interview Communication”, dated Apr. 17, 2020, 3 pages.
Notice of Allowance. U.S. Appl. No. 16/550,272, “Notice of Allowance”, dated Sep. 29, 2020, 8 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 16/699,081, “First Action Interview Pilot Program Pre-Interview Communication”, dated Oct. 26, 2021, 4 pages.
Notice of Allowance. U.S. Appl. No. 16/699,081, “Notice of Allowance”, dated Mar. 31, 2022, 8 pages.
Final Office Action. U.S. Appl. No. 17/811,797, “Final Office Action”, dated May 25, 2023, 13 pages.
FIG. 40 1. In further embodiments, high side transistor 2125 turn on and turn off processes may be controlled by the turn on of substantially similar level …
US 6,211,706 B16,211,706 B1 * 4/2001 Choi.................... H03K 17/063examiner
US 6,229,342 B16,229,342 B1 5/2001 Noble et al.
US 6,304,094 B26,304,094 B2 10/2001 Gilliam
US 6,307,399 B16,307,399 B1 10/2001 Lien et al.
US 6,317,000 B16,317,000 B1 11/2001 Ivanov et al.
US 6,353,345 B16,353,345 B1 3/2002 Yushan et al.
US 6,365,930 B16,365,930 B1 4/2002 Schillaci et al.
US 6,486,714 B26,486,714 B2 * 11/2002 Ushida.................. H02M 7/538examiner
US 6,590,914 B16,590,914 B1 7/2003 Tanase et al.
US 6,593,622 B26,593,622 B2 7/2003 Kinzer et al.
US 6,605,963 B26,605,963 B2 8/2003 Kitamoto et al.
US 6,614,633 B16,614,633 B1 9/2003 Kohno
US 6,636,024 B26,636,024 B2 * 10/2003 Zametzky............. H02M 1/088examiner
US 7,002,398 B27,002,398 B2 2/2006 Disney
US 7,068,486 B27,068,486 B2 * 6/2006 Feldtkeller......... H03K 17/6871examiner
US 7,227,763 B17,227,763 B1 * 6/2007 Noh................... H05B 41/2856examiner
US 7,254,000 B17,254,000 B1 8/2007 Smith et al.
US 7,323,912 B27,323,912 B2 1/2008 Nielsen
US 7,385,375 B27,385,375 B2 6/2008 Rozman
US 7,436,160 B27,436,160 B2 * 10/2008 Rusu.................... H03K 17/284examiner
US 7,619,303 B27,619,303 B2 11/2009 Bayan
US 7,705,476 B27,705,476 B2 4/2010 Bayan et al.
US 7,724,046 B27,724,046 B2 5/2010 Wendt et al.
US 7,808,222 B27,808,222 B2 10/2010 Ueunten
US 7,863,877 B27,863,877 B2 * 1/2011 Briere................. H02M 3/1588examiner
US 7,881,029 B17,881,029 B1 2/2011 Li et al.
US 7,884,583 B27,884,583 B2 * 2/2011 Lenz.................. H03K 17/6871examiner
US 7,928,950 B27,928,950 B2 4/2011 Osame et al.
US 8,044,699 B18,044,699 B1 10/2011 Kelly
US 8,093,373 B28,093,373 B2 1/2012 Van Alstine et al.
US 8,134,400 B28,134,400 B2 3/2012 Yamamoto
US 8,138,598 B28,138,598 B2 3/2012 Shiraishi et al.
US 8,144,441 B28,144,441 B2 3/2012 Ping et al.
US 8,203,380 B28,203,380 B2 6/2012 Hashimoto et al.
US 8,324,934 B18,324,934 B1 12/2012 Truong et al.
US 8,574,437 B28,574,437 B2 11/2013 Bergstrom et al.
US 8,593,211 B28,593,211 B2 11/2013 Forghani-Zadeh et al.
US 8,638,577 B28,638,577 B2 1/2014 Shiraishi et al.
US 8,659,275 B28,659,275 B2 2/2014 Bahramian
US 8,742,490 B28,742,490 B2 * 6/2014 Disney.............. H01L 23/49575examiner
US 8,754,509 B28,754,509 B2 6/2014 Grey
US 8,823,012 B28,823,012 B2 9/2014 Lidow et al.
US 8,970,262 B28,970,262 B2 3/2015 Weis et al.
US 9,064,722 B29,064,722 B2 6/2015 Bedell et al.
US 9,155,980 B29,155,980 B2 10/2015 Glad et al.
US 9,225,163 B29,225,163 B2 12/2015 Cao et al.
US 9,259,729 B29,259,729 B2 2/2016 Bergstrom et al.
US 9,264,022 B29,264,022 B2 2/2016 Kihara
US 9,276,413 B19,276,413 B1 3/2016 Zhang
US 9,278,297 B29,278,297 B2 3/2016 Bergstrom et al.
US 9,374,858 B29,374,858 B2 6/2016 Ni
US 9,401,612 B29,401,612 B2 7/2016 Kinzer et al.
US 9,413,166 B29,413,166 B2 8/2016 Rupp et al.
US 9,525,410 B29,525,410 B2 12/2016 Kim et al.
US 9,537,338 B29,537,338 B2 1/2017 Kinzer et al.
US 9,570,927 B29,570,927 B2 2/2017 Kinzer et al.
US 9,571,093 B29,571,093 B2 2/2017 Kinzer et al.
US 9,577,530 B19,577,530 B1 2/2017 Ribarich et al.
US 9,613,891 B29,613,891 B2 4/2017 Kinzer
US 9,685,869 B19,685,869 B1 6/2017 Kinzer et al.
US 9,712,058 B19,712,058 B1 7/2017 Newlin
US 9,716,395 B29,716,395 B2 7/2017 Kinzer et al.
US 9,722,609 B29,722,609 B2 8/2017 Kinzer et al.
US 9,831,867 B19,831,867 B1 11/2017 Kinzer et al.
US 9,859,732 B29,859,732 B2 1/2018 Kinzer et al.
US 9,929,652 B19,929,652 B1 3/2018 Ribarich et al.
US 9,960,620 B29,960,620 B2 5/2018 Kinzer et al.
US 9,960,764 B29,960,764 B2 5/2018 Kinzer et al.
US 10,084,448 B210,084,448 B2 9/2018 Godycki
US 10,135,275 B210,135,275 B2 11/2018 Kinzer et al.
US 10,170,922 B110,170,922 B1 1/2019 Kinzer et al.
US 10,269,687 B210,269,687 B2 4/2019 Kinzer
US 10,277,048 B210,277,048 B2 4/2019 Kinzer et al.
US 10,305,472 B110,305,472 B1 5/2019 Kinzer et al.
US 10,333,327 B210,333,327 B2 6/2019 Kinzer et al.
US 10,396,579 B210,396,579 B2 8/2019 Kinzer et al.
US 10,530,169 B210,530,169 B2 1/2020 Kinzer et al.
US 10,536,140 B110,536,140 B1 1/2020 Ribarich et al.
US 10,897,142 B210,897,142 B2 1/2021 Kinzer et al.
US 10,910,843 B210,910,843 B2 2/2021 Kinzer et al.
US 10,944,270 B110,944,270 B1 3/2021 Kinzer et al.
US 11,404,884 B211,404,884 B2 8/2022 Kinzer et al.
US 11,545,838 B211,545,838 B2 1/2023 Kinzer et al.
US 11,605,955 B211,605,955 B2 3/2023 Kinzer et al.
US 11,757,290 B211,757,290 B2 9/2023 Kinzer et al.
US 11,770,010 B211,770,010 B2 9/2023 Kinzer et al.
US 2003/0067339 A12003/0067339 A1 4/2003 Yamamoto
US 2004/0182915 A12004/0182915 A1 * 9/2004 Bachman................ H01L 24/05examiner
US 2005/0134533 A12005/0134533 A1 6/2005 Sasada et al.
US 2005/0151236 A12005/0151236 A1 7/2005 Oliver et al.
US 2005/0219017 A12005/0219017 A1 10/2005 Shirakawa
US 2005/0280141 A12005/0280141 A1 * 12/2005 Zhang................. H01L 23/3128examiner
US 2006/0034107 A12006/0034107 A1 * 2/2006 West..................... H02M 7/538examiner
US 2006/0256586 A12006/0256586 A1 11/2006 Ohshima et al.
US 2006/0256589 A12006/0256589 A1 11/2006 Choi
US 2006/0261862 A12006/0261862 A1 11/2006 Baszler et al.
US 2007/0063678 A12007/0063678 A1 3/2007 Yoshikawa
US 2007/0170465 A12007/0170465 A1 7/2007 Kwon et al.
US 2007/0285066 A12007/0285066 A1 12/2007 Lipcsei et al.
US 2008/0012542 A12008/0012542 A1 1/2008 Liu et al.
US 2008/0035959 A12008/0035959 A1 2/2008 Jiang
US 2008/0054979 A12008/0054979 A1 3/2008 Nagumo
US 2008/0062595 A12008/0062595 A1 3/2008 Ping et al.
US 2008/0136390 A12008/0136390 A1 6/2008 Briere
US 2008/0284482 A12008/0284482 A1 11/2008 Ishikawa
US 2009/0052216 A12009/0052216 A1 2/2009 Iwabuchi et al.
US 2009/0180304 A12009/0180304 A1 7/2009 Bahramian et al.
US 2009/0256617 A12009/0256617 A1 10/2009 Ochi
US 2009/0284288 A12009/0284288 A1 11/2009 Zhang et al.
US 2010/0019279 A12010/0019279 A1 1/2010 Chen et al.
US 2010/0025730 A12010/0025730 A1 2/2010 Heikman et al.
US 2010/0060320 A12010/0060320 A1 3/2010 Lee
US 2010/0140660 A12010/0140660 A1 6/2010 Wu et al.
US 2010/0253296 A12010/0253296 A1 10/2010 Huang et al.
US 2010/0258842 A12010/0258842 A1 10/2010 Lidow et al.
US 2010/0264975 A12010/0264975 A1 10/2010 Scott
US 2010/0315163 A12010/0315163 A1 12/2010 Takagi et al.
US 2010/0315748 A12010/0315748 A1 12/2010 Kwong et al.
US 2011/0025397 A12011/0025397 A1 2/2011 Wang et al.
US 2011/0049526 A12011/0049526 A1 3/2011 Chu et al.
US 2011/0157949 A12011/0157949 A1 6/2011 Bahramian
US 2011/0204928 A12011/0204928 A1 8/2011 Umezaki et al.
US 2011/0212585 A12011/0212585 A1 9/2011 Huang et al.
US 2011/0215746 A12011/0215746 A1 9/2011 Ikoshi et al.
US 2011/0216563 A12011/0216563 A1 9/2011 Ribarich
US 2011/0284862 A12011/0284862 A1 11/2011 Zhang
US 2011/0292632 A12011/0292632 A1 12/2011 Wen et al.
US 2011/0316494 A12011/0316494 A1 12/2011 Kitamura et al.
US 2012/0126406 A12012/0126406 A1 5/2012 Dix
US 2012/0126765 A12012/0126765 A1 5/2012 Stone et al.
US 2012/0175631 A12012/0175631 A1 7/2012 Idow et al.
US 2012/0220089 A12012/0220089 A1 8/2012 Imada et al.
US 2012/0274366 A12012/0274366 A1 11/2012 Briere
US 2012/0293231 A12012/0293231 A1 11/2012 Nishijima
US 2012/0319758 A12012/0319758 A1 12/2012 Kobayashi et al.
US 2013/0009674 A12013/0009674 A1 * 1/2013 Reese.................. H03K 5/2481examiner
US 2013/0051113 A12013/0051113 A1 2/2013 Kwon
US 2013/0056744 A12013/0056744 A1 3/2013 Mishra et al.
US 2013/0063123 A12013/0063123 A1 3/2013 Liang
US 2013/0063195 A12013/0063195 A1 3/2013 Youssef
US 2013/0074907 A12013/0074907 A1 3/2013 Saunders
US 2013/0076322 A12013/0076322 A1 3/2013 Tateno et al.
US 2013/0099768 A12013/0099768 A1 4/2013 Yonezawa et al.
US 2013/0119393 A12013/0119393 A1 5/2013 Zhu et al.
US 2013/0146891 A12013/0146891 A1 6/2013 Xin et al.
US 2013/0162923 A12013/0162923 A1 6/2013 Umezaki
US 2013/0193485 A12013/0193485 A1 8/2013 Akiyama et al.
US 2013/0194003 A12013/0194003 A1 8/2013 Takayama et al.
US 2013/0200938 A12013/0200938 A1 8/2013 Yao et al.
US 2013/0240893 A12013/0240893 A1 9/2013 Bedell et al.
US 2013/0241520 A12013/0241520 A1 9/2013 Kim et al.
US 2013/0241621 A12013/0241621 A1 9/2013 Forghani-Zadeh et al.
US 2013/0248931 A12013/0248931 A1 9/2013 Saito et al.
US 2013/0249001 A12013/0249001 A1 9/2013 Willmeroth et al.
US 2013/0249017 A12013/0249017 A1 9/2013 Kwon
US 2013/0249602 A12013/0249602 A1 9/2013 Mauder et al.
US 2013/0265029 A12013/0265029 A1 10/2013 Akiyama
US 2013/0285470 A12013/0285470 A1 10/2013 Koyama et al.
US 2013/0343143 A12013/0343143 A1 12/2013 Jung
US 2014/0001479 A12014/0001479 A1 1/2014 Kudymov
US 2014/0015586 A12014/0015586 A1 1/2014 Hirler et al.
US 2014/0048810 A12014/0048810 A1 2/2014 Umezaki et al.
US 2014/0070627 A12014/0070627 A1 3/2014 Briere et al.
US 2014/0070786 A12014/0070786 A1 3/2014 Guerra et al.
US 2014/0091311 A12014/0091311 A1 4/2014 Jeon et al.
US 2014/0092637 A12014/0092637 A1 4/2014 Minoura et al.
US 2014/0092638 A12014/0092638 A1 4/2014 Nishimori et al.
US 2014/0167069 A12014/0167069 A1 6/2014 Vielemeyer et al.
US 2014/0175454 A12014/0175454 A1 6/2014 Roberts et al.
US 2014/0191281 A12014/0191281 A1 7/2014 Yamaji
US 2014/0225162 A12014/0225162 A1 8/2014 Briere
US 2014/0266389 A12014/0266389 A1 9/2014 Sadwick et al.
US 2014/0300413 A12014/0300413 A1 10/2014 Høyerby et al.
US 2014/0337603 A12014/0337603 A1 11/2014 Yamazaki et al.
US 2014/0346522 A12014/0346522 A1 11/2014 Disney et al.
US 2014/0347116 A12014/0347116 A1 11/2014 Kihara et al.
US 2014/0347905 A12014/0347905 A1 11/2014 Takizawa
US 2014/0353673 A12014/0353673 A1 12/2014 Ito et al.
US 2014/0361343 A12014/0361343 A1 12/2014 Sriram
US 2014/0375372 A12014/0375372 A1 12/2014 Ikeda
US 2015/0034957 A12015/0034957 A1 2/2015 Chiu et al.
US 2015/0042918 A12015/0042918 A1 2/2015 Kimura et al.
US 2015/0091539 A12015/0091539 A1 * 4/2015 Norling................ H03K 17/284examiner
US 2015/0130428 A12015/0130428 A1 5/2015 Lee et al.
US 2015/0137134 A12015/0137134 A1 5/2015 Shah et al.
US 2015/0137135 A12015/0137135 A1 5/2015 Green et al.
US 2015/0160678 A12015/0160678 A1 6/2015 Kadowaki et al.
US 2015/0162424 A12015/0162424 A1 6/2015 Briere
US 2015/0162832 A12015/0162832 A1 * 6/2015 Briere.............. H03K 17/08116examiner
US 2015/0188448 A12015/0188448 A1 7/2015 Perreault et al.
US 2015/0255547 A12015/0255547 A1 9/2015 Yuan et al.
US 2015/0256157 A12015/0256157 A1 9/2015 Kozuma
US 2015/0263001 A12015/0263001 A1 9/2015 Saito et al.
US 2015/0263620 A12015/0263620 A1 9/2015 Huang
US 2015/0311196 A12015/0311196 A1 10/2015 Hirler et al.
US 2015/0357422 A12015/0357422 A1 12/2015 Liao
US 2015/0358003 A12015/0358003 A1 12/2015 Kihara
US 2016/0013179 A12016/0013179 A1 1/2016 Miura
US 2016/0056282 A12016/0056282 A1 2/2016 Yamaji
US 2016/0065086 A12016/0065086 A1 3/2016 Zojer et al.
US 2016/0079785 A12016/0079785 A1 3/2016 Kinzer et al.
US 2016/0079844 A12016/0079844 A1 3/2016 Kinzer et al.
US 2016/0079853 A12016/0079853 A1 3/2016 Kinzer et al.
US 2016/0079854 A12016/0079854 A1 3/2016 Kinzer et al.
US 2016/0079964 A12016/0079964 A1 3/2016 Kinzer et al.
US 2016/0079975 A12016/0079975 A1 3/2016 Kinzer et al.
US 2016/0079978 A12016/0079978 A1 3/2016 Kinzer et al.
US 2016/0079979 A12016/0079979 A1 3/2016 Kinzer et al.
US 2016/0086881 A12016/0086881 A1 3/2016 Standing
US 2016/0086938 A12016/0086938 A1 3/2016 Kinzer
US 2016/0118894 A12016/0118894 A1 4/2016 Zhang et al.
US 2016/0141352 A12016/0141352 A1 5/2016 Sung
US 2016/0173096 A12016/0173096 A1 6/2016 Inoue et al.
US 2016/0173097 A12016/0173097 A1 6/2016 Inoue et al.
US 2016/0240471 A12016/0240471 A1 8/2016 Klowak et al.
US 2016/0247748 A12016/0247748 A1 8/2016 Kinzer
US 2016/0277008 A12016/0277008 A1 9/2016 Green et al.
US 2016/0277012 A12016/0277012 A1 9/2016 Abesingha et al.
US 2016/0307826 A12016/0307826 A1 10/2016 Mcknight-Macneil et al.
US 2016/0315033 A12016/0315033 A1 10/2016 Otremba et al.
US 2016/0322116 A12016/0322116 A1 11/2016 Jang et al.
US 2016/0336926 A12016/0336926 A1 11/2016 Kinzer et al.
US 2016/0372920 A12016/0372920 A1 12/2016 Kinzer et al.
US 2017/0025267 A12017/0025267 A1 1/2017 Chu et al.
US 2017/0093283 A12017/0093283 A1 3/2017 Leoncini et al.
US 2017/0155391 A12017/0155391 A1 6/2017 Kinzer et al.
US 2017/0162483 A12017/0162483 A1 6/2017 Kinzer
US 2017/0163258 A12017/0163258 A1 6/2017 Kinzer et al.
US 2017/0324263 A12017/0324263 A1 11/2017 Kinzer et al.
US 2018/0013422 A12018/0013422 A1 1/2018 Leong et al.
US 2018/0102661 A12018/0102661 A1 4/2018 Kinzer et al.
US 2018/0159529 A12018/0159529 A1 6/2018 Reusch et al.
US 2018/0205373 A12018/0205373 A1 7/2018 Hokazono et al.
US 2020/0044648 A12020/0044648 A1 2/2020 Sharma et al.
US 2020/0153338 A12020/0153338 A1 5/2020 Ribarich et al.
CN 101572490 BCN 101572490 B 5/2012
CN 103872037 ACN 103872037 A 6/2014
CN 107005163 ACN 107005163 A 8/2017
CN 107005163 BCN 107005163 B 9/2018
EP 1120835 A2EP 1120835 A2 8/2001
EP 2763320 A1EP 2763320 A1 8/2014
GB 2244400 AGB 2244400 A 11/1991
JP 2000260451 AJP 2000260451 A 9/2000
JP 2001308462 AJP 2001308462 A 11/2001
JP 2013106027 AJP 2013106027 A 5/2013
TW I231094 BTW I231094 B 4/2005
TW I297503 BTW I297503 B 6/2008
TW I362749 BTW I362749 B 4/2012
TW 201240294 ATW 201240294 A 10/2012
TW I383587 BTW I383587 B 1/2013
TW 201312909 ATW 201312909 A 3/2013
TW 201315150 ATW 201315150 A 4/2013
TW 201401775 ATW 201401775 A 1/2014
TW 201404038 ATW 201404038 A 1/2014
TW 201416818 ATW 201416818 A 5/2014
TW 201622327 ATW 201622327 A 6/2016
TW 201629665 ATW 201629665 A 8/2016
TW 201804277 ATW 201804277 A 2/2018
TW I628780 BTW I628780 B 7/2018
WO 2014171190 A1WO 2014171190 A1 10/2014
WO 2016044474 A1WO 2016044474 A1 3/2016
WO 2016044479 A1WO 2016044479 A1 3/2016
WO 2016044480 A1WO 2016044480 A1 3/2016
WO 2016044481 A1WO 2016044481 A1 3/2016
Cited non-patent literature · 67
100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs. “100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs”, Texas Instruments, LM5113 5A, Available online at: http://www.ti. com/product/lm5113, Apr. 2013, pp. 1-26.
85V Half-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot—Through Protection. “85V Half-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot—Through Protection”, Micrel, Inc., Available online at: http://www.micrel.com/index.php/products/power-management-ics/mosfet-drevers/half-bridge/article/7.html, Nov. 11, 2013, pp. 1-25. “DA8801 Integrated 650V GaN Half Bridge Power IC”, Dialog Semiconductor,Available online at: http://www.dialogsemiconductor. com/products/da8801, Jan. 3, 2017, 6 pages. “Dialog Semiconductor Enters Gallium Nitride (GaN) Market with First Integrated Devices Targeting Fast Charging Power Adapters (News with Additional Features)”, Business Wire, A Berkshire Hathaway Company, Available Online at http://www.businesswire. com/news/home/20160824006260/en/Dialog-Semiconductor-Ente,Aug. 25, 2016, 3 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 15/838,026, “First Action Interview Pilot Program Pre-Interview Communication”, dated Mar. 30, 2018, 4 pages.
Notice of Allowance. U.S. Appl. No. 15/838,026, “Notice of Allowance”, dated Nov. 28, 2018, 9 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 15/903,398, “First Action Interview Pilot Program Pre-Interview Communication”, dated Jun. 4, 2018, 5 pages.
Notice of Allowance. U.S. Appl. No. 15/903,398, “Notice of Allowance”, dated Aug. 15, 2018, 19 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 16/550,272, “First Action Interview Pilot Program Pre-Interview Communication”, dated Apr. 17, 2020, 3 pages.
Notice of Allowance. U.S. Appl. No. 16/550,272, “Notice of Allowance”, dated Sep. 29, 2020, 8 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 16/699,081, “First Action Interview Pilot Program Pre-Interview Communication”, dated Oct. 26, 2021, 4 pages.
Notice of Allowance. U.S. Appl. No. 16/699,081, “Notice of Allowance”, dated Mar. 31, 2022, 8 pages.
Final Office Action. U.S. Appl. No. 17/811,797, “Final Office Action”, dated May 25, 2023, 13 pages.
FIG. 40 1. In further embodiments, high side transistor 2125 turn on and turn off processes may be controlled by the turn on of substantially similar level …
US 6,211,706 B16,211,706 B1 * 4/2001 Choi.................... H03K 17/063examiner
US 6,229,342 B16,229,342 B1 5/2001 Noble et al.
US 6,304,094 B26,304,094 B2 10/2001 Gilliam
US 6,307,399 B16,307,399 B1 10/2001 Lien et al.
US 6,317,000 B16,317,000 B1 11/2001 Ivanov et al.
US 6,353,345 B16,353,345 B1 3/2002 Yushan et al.
US 6,365,930 B16,365,930 B1 4/2002 Schillaci et al.
US 6,486,714 B26,486,714 B2 * 11/2002 Ushida.................. H02M 7/538examiner
US 6,590,914 B16,590,914 B1 7/2003 Tanase et al.
US 6,593,622 B26,593,622 B2 7/2003 Kinzer et al.
US 6,605,963 B26,605,963 B2 8/2003 Kitamoto et al.
US 6,614,633 B16,614,633 B1 9/2003 Kohno
US 6,636,024 B26,636,024 B2 * 10/2003 Zametzky............. H02M 1/088examiner
US 7,002,398 B27,002,398 B2 2/2006 Disney
US 7,068,486 B27,068,486 B2 * 6/2006 Feldtkeller......... H03K 17/6871examiner
US 7,227,763 B17,227,763 B1 * 6/2007 Noh................... H05B 41/2856examiner
US 7,254,000 B17,254,000 B1 8/2007 Smith et al.
US 7,323,912 B27,323,912 B2 1/2008 Nielsen
US 7,385,375 B27,385,375 B2 6/2008 Rozman
US 7,436,160 B27,436,160 B2 * 10/2008 Rusu.................... H03K 17/284examiner
US 7,619,303 B27,619,303 B2 11/2009 Bayan
US 7,705,476 B27,705,476 B2 4/2010 Bayan et al.
US 7,724,046 B27,724,046 B2 5/2010 Wendt et al.
US 7,808,222 B27,808,222 B2 10/2010 Ueunten
US 7,863,877 B27,863,877 B2 * 1/2011 Briere................. H02M 3/1588examiner
US 7,881,029 B17,881,029 B1 2/2011 Li et al.
US 7,884,583 B27,884,583 B2 * 2/2011 Lenz.................. H03K 17/6871examiner
US 7,928,950 B27,928,950 B2 4/2011 Osame et al.
US 8,044,699 B18,044,699 B1 10/2011 Kelly
US 8,093,373 B28,093,373 B2 1/2012 Van Alstine et al.
US 8,134,400 B28,134,400 B2 3/2012 Yamamoto
US 8,138,598 B28,138,598 B2 3/2012 Shiraishi et al.
US 8,144,441 B28,144,441 B2 3/2012 Ping et al.
US 8,203,380 B28,203,380 B2 6/2012 Hashimoto et al.
US 8,324,934 B18,324,934 B1 12/2012 Truong et al.
US 8,574,437 B28,574,437 B2 11/2013 Bergstrom et al.
US 8,593,211 B28,593,211 B2 11/2013 Forghani-Zadeh et al.
US 8,638,577 B28,638,577 B2 1/2014 Shiraishi et al.
US 8,659,275 B28,659,275 B2 2/2014 Bahramian
US 8,742,490 B28,742,490 B2 * 6/2014 Disney.............. H01L 23/49575examiner
US 8,754,509 B28,754,509 B2 6/2014 Grey
US 8,823,012 B28,823,012 B2 9/2014 Lidow et al.
US 8,970,262 B28,970,262 B2 3/2015 Weis et al.
US 9,064,722 B29,064,722 B2 6/2015 Bedell et al.
US 9,155,980 B29,155,980 B2 10/2015 Glad et al.
US 9,225,163 B29,225,163 B2 12/2015 Cao et al.
US 9,259,729 B29,259,729 B2 2/2016 Bergstrom et al.
US 9,264,022 B29,264,022 B2 2/2016 Kihara
US 9,276,413 B19,276,413 B1 3/2016 Zhang
US 9,278,297 B29,278,297 B2 3/2016 Bergstrom et al.
US 9,374,858 B29,374,858 B2 6/2016 Ni
US 9,401,612 B29,401,612 B2 7/2016 Kinzer et al.
US 9,413,166 B29,413,166 B2 8/2016 Rupp et al.
US 9,525,410 B29,525,410 B2 12/2016 Kim et al.
US 9,537,338 B29,537,338 B2 1/2017 Kinzer et al.
US 9,570,927 B29,570,927 B2 2/2017 Kinzer et al.
US 9,571,093 B29,571,093 B2 2/2017 Kinzer et al.
US 9,577,530 B19,577,530 B1 2/2017 Ribarich et al.
US 9,613,891 B29,613,891 B2 4/2017 Kinzer
US 9,685,869 B19,685,869 B1 6/2017 Kinzer et al.
US 9,712,058 B19,712,058 B1 7/2017 Newlin
US 9,716,395 B29,716,395 B2 7/2017 Kinzer et al.
US 9,722,609 B29,722,609 B2 8/2017 Kinzer et al.
US 9,831,867 B19,831,867 B1 11/2017 Kinzer et al.
US 9,859,732 B29,859,732 B2 1/2018 Kinzer et al.
US 9,929,652 B19,929,652 B1 3/2018 Ribarich et al.
US 9,960,620 B29,960,620 B2 5/2018 Kinzer et al.
US 9,960,764 B29,960,764 B2 5/2018 Kinzer et al.
US 10,084,448 B210,084,448 B2 9/2018 Godycki
US 10,135,275 B210,135,275 B2 11/2018 Kinzer et al.
US 10,170,922 B110,170,922 B1 1/2019 Kinzer et al.
US 10,269,687 B210,269,687 B2 4/2019 Kinzer
US 10,277,048 B210,277,048 B2 4/2019 Kinzer et al.
US 10,305,472 B110,305,472 B1 5/2019 Kinzer et al.
US 10,333,327 B210,333,327 B2 6/2019 Kinzer et al.
US 10,396,579 B210,396,579 B2 8/2019 Kinzer et al.
US 10,530,169 B210,530,169 B2 1/2020 Kinzer et al.
US 10,536,140 B110,536,140 B1 1/2020 Ribarich et al.
US 10,897,142 B210,897,142 B2 1/2021 Kinzer et al.
US 10,910,843 B210,910,843 B2 2/2021 Kinzer et al.
US 10,944,270 B110,944,270 B1 3/2021 Kinzer et al.
US 11,404,884 B211,404,884 B2 8/2022 Kinzer et al.
US 11,545,838 B211,545,838 B2 1/2023 Kinzer et al.
US 11,605,955 B211,605,955 B2 3/2023 Kinzer et al.
US 11,757,290 B211,757,290 B2 9/2023 Kinzer et al.
US 11,770,010 B211,770,010 B2 9/2023 Kinzer et al.
US 2003/0067339 A12003/0067339 A1 4/2003 Yamamoto
US 2004/0182915 A12004/0182915 A1 * 9/2004 Bachman................ H01L 24/05examiner
US 2005/0134533 A12005/0134533 A1 6/2005 Sasada et al.
US 2005/0151236 A12005/0151236 A1 7/2005 Oliver et al.
US 2005/0219017 A12005/0219017 A1 10/2005 Shirakawa
US 2005/0280141 A12005/0280141 A1 * 12/2005 Zhang................. H01L 23/3128examiner
US 2006/0034107 A12006/0034107 A1 * 2/2006 West..................... H02M 7/538examiner
US 2006/0256586 A12006/0256586 A1 11/2006 Ohshima et al.
US 2006/0256589 A12006/0256589 A1 11/2006 Choi
US 2006/0261862 A12006/0261862 A1 11/2006 Baszler et al.
US 2007/0063678 A12007/0063678 A1 3/2007 Yoshikawa
US 2007/0170465 A12007/0170465 A1 7/2007 Kwon et al.
US 2007/0285066 A12007/0285066 A1 12/2007 Lipcsei et al.
US 2008/0012542 A12008/0012542 A1 1/2008 Liu et al.
US 2008/0035959 A12008/0035959 A1 2/2008 Jiang
US 2008/0054979 A12008/0054979 A1 3/2008 Nagumo
US 2008/0062595 A12008/0062595 A1 3/2008 Ping et al.
US 2008/0136390 A12008/0136390 A1 6/2008 Briere
US 2008/0284482 A12008/0284482 A1 11/2008 Ishikawa
US 2009/0052216 A12009/0052216 A1 2/2009 Iwabuchi et al.
US 2009/0180304 A12009/0180304 A1 7/2009 Bahramian et al.
US 2009/0256617 A12009/0256617 A1 10/2009 Ochi
US 2009/0284288 A12009/0284288 A1 11/2009 Zhang et al.
US 2010/0019279 A12010/0019279 A1 1/2010 Chen et al.
US 2010/0025730 A12010/0025730 A1 2/2010 Heikman et al.
US 2010/0060320 A12010/0060320 A1 3/2010 Lee
US 2010/0140660 A12010/0140660 A1 6/2010 Wu et al.
US 2010/0253296 A12010/0253296 A1 10/2010 Huang et al.
US 2010/0258842 A12010/0258842 A1 10/2010 Lidow et al.
US 2010/0264975 A12010/0264975 A1 10/2010 Scott
US 2010/0315163 A12010/0315163 A1 12/2010 Takagi et al.
US 2010/0315748 A12010/0315748 A1 12/2010 Kwong et al.
US 2011/0025397 A12011/0025397 A1 2/2011 Wang et al.
US 2011/0049526 A12011/0049526 A1 3/2011 Chu et al.
US 2011/0157949 A12011/0157949 A1 6/2011 Bahramian
US 2011/0204928 A12011/0204928 A1 8/2011 Umezaki et al.
US 2011/0212585 A12011/0212585 A1 9/2011 Huang et al.
US 2011/0215746 A12011/0215746 A1 9/2011 Ikoshi et al.
US 2011/0216563 A12011/0216563 A1 9/2011 Ribarich
US 2011/0284862 A12011/0284862 A1 11/2011 Zhang
US 2011/0292632 A12011/0292632 A1 12/2011 Wen et al.
US 2011/0316494 A12011/0316494 A1 12/2011 Kitamura et al.
US 2012/0126406 A12012/0126406 A1 5/2012 Dix
US 2012/0126765 A12012/0126765 A1 5/2012 Stone et al.
US 2012/0175631 A12012/0175631 A1 7/2012 Idow et al.
US 2012/0220089 A12012/0220089 A1 8/2012 Imada et al.
US 2012/0274366 A12012/0274366 A1 11/2012 Briere
US 2012/0293231 A12012/0293231 A1 11/2012 Nishijima
US 2012/0319758 A12012/0319758 A1 12/2012 Kobayashi et al.
US 2013/0009674 A12013/0009674 A1 * 1/2013 Reese.................. H03K 5/2481examiner
US 2013/0051113 A12013/0051113 A1 2/2013 Kwon
US 2013/0056744 A12013/0056744 A1 3/2013 Mishra et al.
US 2013/0063123 A12013/0063123 A1 3/2013 Liang
US 2013/0063195 A12013/0063195 A1 3/2013 Youssef
US 2013/0074907 A12013/0074907 A1 3/2013 Saunders
US 2013/0076322 A12013/0076322 A1 3/2013 Tateno et al.
US 2013/0099768 A12013/0099768 A1 4/2013 Yonezawa et al.
US 2013/0119393 A12013/0119393 A1 5/2013 Zhu et al.
US 2013/0146891 A12013/0146891 A1 6/2013 Xin et al.
US 2013/0162923 A12013/0162923 A1 6/2013 Umezaki
US 2013/0193485 A12013/0193485 A1 8/2013 Akiyama et al.
US 2013/0194003 A12013/0194003 A1 8/2013 Takayama et al.
US 2013/0200938 A12013/0200938 A1 8/2013 Yao et al.
US 2013/0240893 A12013/0240893 A1 9/2013 Bedell et al.
US 2013/0241520 A12013/0241520 A1 9/2013 Kim et al.
US 2013/0241621 A12013/0241621 A1 9/2013 Forghani-Zadeh et al.
US 2013/0248931 A12013/0248931 A1 9/2013 Saito et al.
US 2013/0249001 A12013/0249001 A1 9/2013 Willmeroth et al.
US 2013/0249017 A12013/0249017 A1 9/2013 Kwon
US 2013/0249602 A12013/0249602 A1 9/2013 Mauder et al.
US 2013/0265029 A12013/0265029 A1 10/2013 Akiyama
US 2013/0285470 A12013/0285470 A1 10/2013 Koyama et al.
US 2013/0343143 A12013/0343143 A1 12/2013 Jung
US 2014/0001479 A12014/0001479 A1 1/2014 Kudymov
US 2014/0015586 A12014/0015586 A1 1/2014 Hirler et al.
US 2014/0048810 A12014/0048810 A1 2/2014 Umezaki et al.
US 2014/0070627 A12014/0070627 A1 3/2014 Briere et al.
US 2014/0070786 A12014/0070786 A1 3/2014 Guerra et al.
US 2014/0091311 A12014/0091311 A1 4/2014 Jeon et al.
US 2014/0092637 A12014/0092637 A1 4/2014 Minoura et al.
US 2014/0092638 A12014/0092638 A1 4/2014 Nishimori et al.
US 2014/0167069 A12014/0167069 A1 6/2014 Vielemeyer et al.
US 2014/0175454 A12014/0175454 A1 6/2014 Roberts et al.
US 2014/0191281 A12014/0191281 A1 7/2014 Yamaji
US 2014/0225162 A12014/0225162 A1 8/2014 Briere
US 2014/0266389 A12014/0266389 A1 9/2014 Sadwick et al.
US 2014/0300413 A12014/0300413 A1 10/2014 Høyerby et al.
US 2014/0337603 A12014/0337603 A1 11/2014 Yamazaki et al.
US 2014/0346522 A12014/0346522 A1 11/2014 Disney et al.
US 2014/0347116 A12014/0347116 A1 11/2014 Kihara et al.
US 2014/0347905 A12014/0347905 A1 11/2014 Takizawa
US 2014/0353673 A12014/0353673 A1 12/2014 Ito et al.
US 2014/0361343 A12014/0361343 A1 12/2014 Sriram
US 2014/0375372 A12014/0375372 A1 12/2014 Ikeda
US 2015/0034957 A12015/0034957 A1 2/2015 Chiu et al.
US 2015/0042918 A12015/0042918 A1 2/2015 Kimura et al.
US 2015/0091539 A12015/0091539 A1 * 4/2015 Norling................ H03K 17/284examiner
US 2015/0130428 A12015/0130428 A1 5/2015 Lee et al.
US 2015/0137134 A12015/0137134 A1 5/2015 Shah et al.
US 2015/0137135 A12015/0137135 A1 5/2015 Green et al.
US 2015/0160678 A12015/0160678 A1 6/2015 Kadowaki et al.
US 2015/0162424 A12015/0162424 A1 6/2015 Briere
US 2015/0162832 A12015/0162832 A1 * 6/2015 Briere.............. H03K 17/08116examiner
US 2015/0188448 A12015/0188448 A1 7/2015 Perreault et al.
US 2015/0255547 A12015/0255547 A1 9/2015 Yuan et al.
US 2015/0256157 A12015/0256157 A1 9/2015 Kozuma
US 2015/0263001 A12015/0263001 A1 9/2015 Saito et al.
US 2015/0263620 A12015/0263620 A1 9/2015 Huang
US 2015/0311196 A12015/0311196 A1 10/2015 Hirler et al.
US 2015/0357422 A12015/0357422 A1 12/2015 Liao
US 2015/0358003 A12015/0358003 A1 12/2015 Kihara
US 2016/0013179 A12016/0013179 A1 1/2016 Miura
US 2016/0056282 A12016/0056282 A1 2/2016 Yamaji
US 2016/0065086 A12016/0065086 A1 3/2016 Zojer et al.
US 2016/0079785 A12016/0079785 A1 3/2016 Kinzer et al.
US 2016/0079844 A12016/0079844 A1 3/2016 Kinzer et al.
US 2016/0079853 A12016/0079853 A1 3/2016 Kinzer et al.
US 2016/0079854 A12016/0079854 A1 3/2016 Kinzer et al.
US 2016/0079964 A12016/0079964 A1 3/2016 Kinzer et al.
US 2016/0079975 A12016/0079975 A1 3/2016 Kinzer et al.
US 2016/0079978 A12016/0079978 A1 3/2016 Kinzer et al.
US 2016/0079979 A12016/0079979 A1 3/2016 Kinzer et al.
US 2016/0086881 A12016/0086881 A1 3/2016 Standing
US 2016/0086938 A12016/0086938 A1 3/2016 Kinzer
US 2016/0118894 A12016/0118894 A1 4/2016 Zhang et al.
US 2016/0141352 A12016/0141352 A1 5/2016 Sung
US 2016/0173096 A12016/0173096 A1 6/2016 Inoue et al.
US 2016/0173097 A12016/0173097 A1 6/2016 Inoue et al.
US 2016/0240471 A12016/0240471 A1 8/2016 Klowak et al.
US 2016/0247748 A12016/0247748 A1 8/2016 Kinzer
US 2016/0277008 A12016/0277008 A1 9/2016 Green et al.
US 2016/0277012 A12016/0277012 A1 9/2016 Abesingha et al.
US 2016/0307826 A12016/0307826 A1 10/2016 Mcknight-Macneil et al.
US 2016/0315033 A12016/0315033 A1 10/2016 Otremba et al.
US 2016/0322116 A12016/0322116 A1 11/2016 Jang et al.
US 2016/0336926 A12016/0336926 A1 11/2016 Kinzer et al.
US 2016/0372920 A12016/0372920 A1 12/2016 Kinzer et al.
US 2017/0025267 A12017/0025267 A1 1/2017 Chu et al.
US 2017/0093283 A12017/0093283 A1 3/2017 Leoncini et al.
US 2017/0155391 A12017/0155391 A1 6/2017 Kinzer et al.
US 2017/0162483 A12017/0162483 A1 6/2017 Kinzer
US 2017/0163258 A12017/0163258 A1 6/2017 Kinzer et al.
US 2017/0324263 A12017/0324263 A1 11/2017 Kinzer et al.
US 2018/0013422 A12018/0013422 A1 1/2018 Leong et al.
US 2018/0102661 A12018/0102661 A1 4/2018 Kinzer et al.
US 2018/0159529 A12018/0159529 A1 6/2018 Reusch et al.
US 2018/0205373 A12018/0205373 A1 7/2018 Hokazono et al.
US 2020/0044648 A12020/0044648 A1 2/2020 Sharma et al.
US 2020/0153338 A12020/0153338 A1 5/2020 Ribarich et al.
CN 101572490 BCN 101572490 B 5/2012
CN 103872037 ACN 103872037 A 6/2014
CN 107005163 ACN 107005163 A 8/2017
CN 107005163 BCN 107005163 B 9/2018
EP 1120835 A2EP 1120835 A2 8/2001
EP 2763320 A1EP 2763320 A1 8/2014
GB 2244400 AGB 2244400 A 11/1991
JP 2000260451 AJP 2000260451 A 9/2000
JP 2001308462 AJP 2001308462 A 11/2001
JP 2013106027 AJP 2013106027 A 5/2013
TW I231094 BTW I231094 B 4/2005
TW I297503 BTW I297503 B 6/2008
TW I362749 BTW I362749 B 4/2012
TW 201240294 ATW 201240294 A 10/2012
TW I383587 BTW I383587 B 1/2013
TW 201312909 ATW 201312909 A 3/2013
TW 201315150 ATW 201315150 A 4/2013
TW 201401775 ATW 201401775 A 1/2014
TW 201404038 ATW 201404038 A 1/2014
TW 201416818 ATW 201416818 A 5/2014
TW 201622327 ATW 201622327 A 6/2016
TW 201629665 ATW 201629665 A 8/2016
TW 201804277 ATW 201804277 A 2/2018
TW I628780 BTW I628780 B 7/2018
WO 2014171190 A1WO 2014171190 A1 10/2014
WO 2016044474 A1WO 2016044474 A1 3/2016
WO 2016044479 A1WO 2016044479 A1 3/2016
WO 2016044480 A1WO 2016044480 A1 3/2016
WO 2016044481 A1WO 2016044481 A1 3/2016
Cited non-patent literature · 67
100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs. “100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs”, Texas Instruments, LM5113 5A, Available online at: http://www.ti. com/product/lm5113, Apr. 2013, pp. 1-26.
85V Half-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot—Through Protection. “85V Half-Bridge MOSFET Drivers with Adaptive Dead Time and Shoot—Through Protection”, Micrel, Inc., Available online at: http://www.micrel.com/index.php/products/power-management-ics/mosfet-drevers/half-bridge/article/7.html, Nov. 11, 2013, pp. 1-25. “DA8801 Integrated 650V GaN Half Bridge Power IC”, Dialog Semiconductor,Available online at: http://www.dialogsemiconductor. com/products/da8801, Jan. 3, 2017, 6 pages. “Dialog Semiconductor Enters Gallium Nitride (GaN) Market with First Integrated Devices Targeting Fast Charging Power Adapters (News with Additional Features)”, Business Wire, A Berkshire Hathaway Company, Available Online at http://www.businesswire. com/news/home/20160824006260/en/Dialog-Semiconductor-Ente,Aug. 25, 2016, 3 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 15/838,026, “First Action Interview Pilot Program Pre-Interview Communication”, dated Mar. 30, 2018, 4 pages.
Notice of Allowance. U.S. Appl. No. 15/838,026, “Notice of Allowance”, dated Nov. 28, 2018, 9 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 15/903,398, “First Action Interview Pilot Program Pre-Interview Communication”, dated Jun. 4, 2018, 5 pages.
Notice of Allowance. U.S. Appl. No. 15/903,398, “Notice of Allowance”, dated Aug. 15, 2018, 19 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 16/550,272, “First Action Interview Pilot Program Pre-Interview Communication”, dated Apr. 17, 2020, 3 pages.
Notice of Allowance. U.S. Appl. No. 16/550,272, “Notice of Allowance”, dated Sep. 29, 2020, 8 pages.
First Action Interview Pilot Program Pre-Interview Communication. U.S. Appl. No. 16/699,081, “First Action Interview Pilot Program Pre-Interview Communication”, dated Oct. 26, 2021, 4 pages.
Notice of Allowance. U.S. Appl. No. 16/699,081, “Notice of Allowance”, dated Mar. 31, 2022, 8 pages.
Final Office Action. U.S. Appl. No. 17/811,797, “Final Office Action”, dated May 25, 2023, 13 pages.
