Patent
Atlas literature
Patent
US 12,287,360 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a planar structure of a GaN HEMT device of the present invention.
FIG. 2 shows a schematic diagram of a sectional structure of a GaN HEMT device of the present invention.
FIG. 3b shows a schematic principle diagram of acquisi- tion and analysis in a corresponding vertical direction at relatively high gate voltage. 60
FIG. 4a shows a schematic principle diagram of acquisi- tion and analysis in the corresponding horizontal direction 65 when a first ohmic metal layer is …
FIG. 5 shows a schematic diagram of corresponding positions of relevant parameters of inner gear electrodes and outer gear electrodes.
FIG. 6 shows a flowchart of a method for detecting irradiation damage in a GaN HEMT device of the present invention. In the figures: 1—substrate layer; 2—gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Gallium nitride-based high electron mobility transis-tor (GaN HEMT) device for irradiation damage detection, comprising a substrate layer, a gallium nitride layer, a barrier layer and a dielectric layer, a p-type gallium nitride layer is provided on the barrier layer and the p-type gallium nitride layer is annular-shaped, wherein a drain and a source are respectively located at an inner side and an outer side of the p-type gallium nitride layer, and the drain and the source are provided on the gallium nitride layer, both the drain and the source are transparent, and the drain is annular-shaped, a Schottky metal layer is provided on the p-type gallium nitride layer and the Schottky metal layer is annular-shaped and semi-transparent, a first ohmic metal layer is provided on the barrier layer and the first ohmic metal layer is located between the source and the p-type gallium nitride layer, the first ohmic metal layer is annular-shaped and transparent, a second ohmic metal layer is provided on the barrier layer and the second ohmic metal layer is located between the drain and the p-type gallium nitride layer, the second ohmic metal layer is annular-shaped and transparent, and the sec-ond ohmic metal layer comprises a plurality of inner gear electrodes and a plurality of outer gear electrodes, which are interdigital with each other, a gap exists between each inner gear electrode and each outer gear electrode, and the first ohmic metal layer and the second ohmic metal layer are indium tin oxide (ITO) transparent electrodes.
The GaN HEMT device for irradiation damage detec-tion according to claim 1, wherein tooth roots of the plurality of inner gear electrodes are connected to an outer ring to form a whole, and the outer ring is in contact with the p-type gallium nitride layer; tooth roots of the plurality of the outer gear electrodes are connected to an inner ring to form a whole, and a gap exists between the inner ring and the drain; and tooth tips of the plurality of inner gear electrodes point towards the inner ring and have a gap with the inner ring, and tooth tips of the plurality of outer gear electrodes point towards the outer ring and have a gap with the outer ring.
The GaN HEMT device for irradiation damage detec-tion according to claim 1, wherein the Schottky metal layer is a semi-transparent electrode evaporated with a Ni layer with a thickness of 4-7 nm and a Cr layer with a thickness of 5-8 nm; both the source and the drain are transparent electrodes sputtered with a ITO layer with a thickness of 85-100 nm; both the first ohmic metal layer and the second ohmic metal layer are transparent electrodes sputtered with a ITO layer with a thickness of 65-90 nm; an inner side of the first ohmic metal layer is in contact with the p-type gallium nitride layer, a gap x between an outer side of the first ohmic metal layer and the source is 1-2 µm, and the gap between the outer side of the first ohmic metal layer and the source is filled with the dielectric layer with a thickness of 150-200 nm; a ring width W₁ of the first ohmic metal layer is 4-6 µm; and a curvature K₁ of the inner ring of the first ohmic metal layer satisfies an inequality of 1/(1+d1)≥K1≥1/d1, and a curvature K₂ of the outer ring satisfies an inequality of K1≥K2≥1/(d1+W1−x), d1 is a distance from the p-type gallium nitride layer to the drain. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT device for irradiation damage detection
Materials described outside the worked examples.
gallium nitride
GaN
p-type gallium nitride
p-GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3b shows a schematic principle diagram of acquisi- tion and analysis in a corresponding vertical direction at relatively high gate voltage. 60
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Schottky Ni layer thickness | 4–7 nm | Ni |
Schottky Cr layer thickness | 5–8 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,287,360 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a planar structure of a GaN HEMT device of the present invention.
FIG. 2 shows a schematic diagram of a sectional structure of a GaN HEMT device of the present invention.
FIG. 3b shows a schematic principle diagram of acquisi- tion and analysis in a corresponding vertical direction at relatively high gate voltage. 60
FIG. 4a shows a schematic principle diagram of acquisi- tion and analysis in the corresponding horizontal direction 65 when a first ohmic metal layer is …
FIG. 5 shows a schematic diagram of corresponding positions of relevant parameters of inner gear electrodes and outer gear electrodes.
FIG. 6 shows a flowchart of a method for detecting irradiation damage in a GaN HEMT device of the present invention. In the figures: 1—substrate layer; 2—gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Gallium nitride-based high electron mobility transis-tor (GaN HEMT) device for irradiation damage detection, comprising a substrate layer, a gallium nitride layer, a barrier layer and a dielectric layer, a p-type gallium nitride layer is provided on the barrier layer and the p-type gallium nitride layer is annular-shaped, wherein a drain and a source are respectively located at an inner side and an outer side of the p-type gallium nitride layer, and the drain and the source are provided on the gallium nitride layer, both the drain and the source are transparent, and the drain is annular-shaped, a Schottky metal layer is provided on the p-type gallium nitride layer and the Schottky metal layer is annular-shaped and semi-transparent, a first ohmic metal layer is provided on the barrier layer and the first ohmic metal layer is located between the source and the p-type gallium nitride layer, the first ohmic metal layer is annular-shaped and transparent, a second ohmic metal layer is provided on the barrier layer and the second ohmic metal layer is located between the drain and the p-type gallium nitride layer, the second ohmic metal layer is annular-shaped and transparent, and the sec-ond ohmic metal layer comprises a plurality of inner gear electrodes and a plurality of outer gear electrodes, which are interdigital with each other, a gap exists between each inner gear electrode and each outer gear electrode, and the first ohmic metal layer and the second ohmic metal layer are indium tin oxide (ITO) transparent electrodes.
The GaN HEMT device for irradiation damage detec-tion according to claim 1, wherein tooth roots of the plurality of inner gear electrodes are connected to an outer ring to form a whole, and the outer ring is in contact with the p-type gallium nitride layer; tooth roots of the plurality of the outer gear electrodes are connected to an inner ring to form a whole, and a gap exists between the inner ring and the drain; and tooth tips of the plurality of inner gear electrodes point towards the inner ring and have a gap with the inner ring, and tooth tips of the plurality of outer gear electrodes point towards the outer ring and have a gap with the outer ring.
The GaN HEMT device for irradiation damage detec-tion according to claim 1, wherein the Schottky metal layer is a semi-transparent electrode evaporated with a Ni layer with a thickness of 4-7 nm and a Cr layer with a thickness of 5-8 nm; both the source and the drain are transparent electrodes sputtered with a ITO layer with a thickness of 85-100 nm; both the first ohmic metal layer and the second ohmic metal layer are transparent electrodes sputtered with a ITO layer with a thickness of 65-90 nm; an inner side of the first ohmic metal layer is in contact with the p-type gallium nitride layer, a gap x between an outer side of the first ohmic metal layer and the source is 1-2 µm, and the gap between the outer side of the first ohmic metal layer and the source is filled with the dielectric layer with a thickness of 150-200 nm; a ring width W₁ of the first ohmic metal layer is 4-6 µm; and a curvature K₁ of the inner ring of the first ohmic metal layer satisfies an inequality of 1/(1+d1)≥K1≥1/d1, and a curvature K₂ of the outer ring satisfies an inequality of K1≥K2≥1/(d1+W1−x), d1 is a distance from the p-type gallium nitride layer to the drain. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT device for irradiation damage detection
Materials described outside the worked examples.
gallium nitride
GaN
p-type gallium nitride
p-GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3b shows a schematic principle diagram of acquisi- tion and analysis in a corresponding vertical direction at relatively high gate voltage. 60
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Schottky Ni layer thickness | 4–7 nm | Ni |
Schottky Cr layer thickness | 5–8 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,287,360 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a planar structure of a GaN HEMT device of the present invention.
FIG. 2 shows a schematic diagram of a sectional structure of a GaN HEMT device of the present invention.
FIG. 3b shows a schematic principle diagram of acquisi- tion and analysis in a corresponding vertical direction at relatively high gate voltage. 60
FIG. 4a shows a schematic principle diagram of acquisi- tion and analysis in the corresponding horizontal direction 65 when a first ohmic metal layer is …
FIG. 5 shows a schematic diagram of corresponding positions of relevant parameters of inner gear electrodes and outer gear electrodes.
FIG. 6 shows a flowchart of a method for detecting irradiation damage in a GaN HEMT device of the present invention. In the figures: 1—substrate layer; 2—gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Gallium nitride-based high electron mobility transis-tor (GaN HEMT) device for irradiation damage detection, comprising a substrate layer, a gallium nitride layer, a barrier layer and a dielectric layer, a p-type gallium nitride layer is provided on the barrier layer and the p-type gallium nitride layer is annular-shaped, wherein a drain and a source are respectively located at an inner side and an outer side of the p-type gallium nitride layer, and the drain and the source are provided on the gallium nitride layer, both the drain and the source are transparent, and the drain is annular-shaped, a Schottky metal layer is provided on the p-type gallium nitride layer and the Schottky metal layer is annular-shaped and semi-transparent, a first ohmic metal layer is provided on the barrier layer and the first ohmic metal layer is located between the source and the p-type gallium nitride layer, the first ohmic metal layer is annular-shaped and transparent, a second ohmic metal layer is provided on the barrier layer and the second ohmic metal layer is located between the drain and the p-type gallium nitride layer, the second ohmic metal layer is annular-shaped and transparent, and the sec-ond ohmic metal layer comprises a plurality of inner gear electrodes and a plurality of outer gear electrodes, which are interdigital with each other, a gap exists between each inner gear electrode and each outer gear electrode, and the first ohmic metal layer and the second ohmic metal layer are indium tin oxide (ITO) transparent electrodes.
The GaN HEMT device for irradiation damage detec-tion according to claim 1, wherein tooth roots of the plurality of inner gear electrodes are connected to an outer ring to form a whole, and the outer ring is in contact with the p-type gallium nitride layer; tooth roots of the plurality of the outer gear electrodes are connected to an inner ring to form a whole, and a gap exists between the inner ring and the drain; and tooth tips of the plurality of inner gear electrodes point towards the inner ring and have a gap with the inner ring, and tooth tips of the plurality of outer gear electrodes point towards the outer ring and have a gap with the outer ring.
The GaN HEMT device for irradiation damage detec-tion according to claim 1, wherein the Schottky metal layer is a semi-transparent electrode evaporated with a Ni layer with a thickness of 4-7 nm and a Cr layer with a thickness of 5-8 nm; both the source and the drain are transparent electrodes sputtered with a ITO layer with a thickness of 85-100 nm; both the first ohmic metal layer and the second ohmic metal layer are transparent electrodes sputtered with a ITO layer with a thickness of 65-90 nm; an inner side of the first ohmic metal layer is in contact with the p-type gallium nitride layer, a gap x between an outer side of the first ohmic metal layer and the source is 1-2 µm, and the gap between the outer side of the first ohmic metal layer and the source is filled with the dielectric layer with a thickness of 150-200 nm; a ring width W₁ of the first ohmic metal layer is 4-6 µm; and a curvature K₁ of the inner ring of the first ohmic metal layer satisfies an inequality of 1/(1+d1)≥K1≥1/d1, and a curvature K₂ of the outer ring satisfies an inequality of K1≥K2≥1/(d1+W1−x), d1 is a distance from the p-type gallium nitride layer to the drain. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT device for irradiation damage detection
Materials described outside the worked examples.
gallium nitride
GaN
p-type gallium nitride
p-GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3b shows a schematic principle diagram of acquisi- tion and analysis in a corresponding vertical direction at relatively high gate voltage. 60
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Schottky Ni layer thickness | 4–7 nm | Ni |
Schottky Cr layer thickness | 5–8 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,287,360 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic diagram of a planar structure of a GaN HEMT device of the present invention.
FIG. 2 shows a schematic diagram of a sectional structure of a GaN HEMT device of the present invention.
FIG. 3b shows a schematic principle diagram of acquisi- tion and analysis in a corresponding vertical direction at relatively high gate voltage. 60
FIG. 4a shows a schematic principle diagram of acquisi- tion and analysis in the corresponding horizontal direction 65 when a first ohmic metal layer is …
FIG. 5 shows a schematic diagram of corresponding positions of relevant parameters of inner gear electrodes and outer gear electrodes.
FIG. 6 shows a flowchart of a method for detecting irradiation damage in a GaN HEMT device of the present invention. In the figures: 1—substrate layer; 2—gallium …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Gallium nitride-based high electron mobility transis-tor (GaN HEMT) device for irradiation damage detection, comprising a substrate layer, a gallium nitride layer, a barrier layer and a dielectric layer, a p-type gallium nitride layer is provided on the barrier layer and the p-type gallium nitride layer is annular-shaped, wherein a drain and a source are respectively located at an inner side and an outer side of the p-type gallium nitride layer, and the drain and the source are provided on the gallium nitride layer, both the drain and the source are transparent, and the drain is annular-shaped, a Schottky metal layer is provided on the p-type gallium nitride layer and the Schottky metal layer is annular-shaped and semi-transparent, a first ohmic metal layer is provided on the barrier layer and the first ohmic metal layer is located between the source and the p-type gallium nitride layer, the first ohmic metal layer is annular-shaped and transparent, a second ohmic metal layer is provided on the barrier layer and the second ohmic metal layer is located between the drain and the p-type gallium nitride layer, the second ohmic metal layer is annular-shaped and transparent, and the sec-ond ohmic metal layer comprises a plurality of inner gear electrodes and a plurality of outer gear electrodes, which are interdigital with each other, a gap exists between each inner gear electrode and each outer gear electrode, and the first ohmic metal layer and the second ohmic metal layer are indium tin oxide (ITO) transparent electrodes.
The GaN HEMT device for irradiation damage detec-tion according to claim 1, wherein tooth roots of the plurality of inner gear electrodes are connected to an outer ring to form a whole, and the outer ring is in contact with the p-type gallium nitride layer; tooth roots of the plurality of the outer gear electrodes are connected to an inner ring to form a whole, and a gap exists between the inner ring and the drain; and tooth tips of the plurality of inner gear electrodes point towards the inner ring and have a gap with the inner ring, and tooth tips of the plurality of outer gear electrodes point towards the outer ring and have a gap with the outer ring.
The GaN HEMT device for irradiation damage detec-tion according to claim 1, wherein the Schottky metal layer is a semi-transparent electrode evaporated with a Ni layer with a thickness of 4-7 nm and a Cr layer with a thickness of 5-8 nm; both the source and the drain are transparent electrodes sputtered with a ITO layer with a thickness of 85-100 nm; both the first ohmic metal layer and the second ohmic metal layer are transparent electrodes sputtered with a ITO layer with a thickness of 65-90 nm; an inner side of the first ohmic metal layer is in contact with the p-type gallium nitride layer, a gap x between an outer side of the first ohmic metal layer and the source is 1-2 µm, and the gap between the outer side of the first ohmic metal layer and the source is filled with the dielectric layer with a thickness of 150-200 nm; a ring width W₁ of the first ohmic metal layer is 4-6 µm; and a curvature K₁ of the inner ring of the first ohmic metal layer satisfies an inequality of 1/(1+d1)≥K1≥1/d1, and a curvature K₂ of the outer ring satisfies an inequality of K1≥K2≥1/(d1+W1−x), d1 is a distance from the p-type gallium nitride layer to the drain. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT device for irradiation damage detection
Materials described outside the worked examples.
gallium nitride
GaN
p-type gallium nitride
p-GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3b shows a schematic principle diagram of acquisi- tion and analysis in a corresponding vertical direction at relatively high gate voltage. 60
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Schottky Ni layer thickness | 4–7 nm | Ni |
Schottky Cr layer thickness | 5–8 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
indium tin oxide
ITO
dielectric layer
nickel
Ni
chromium
Cr
Source/drain ITO electrode thickness | 85–100 nm | ITO |
Ohmic metal layer (first and second) ITO electrode thickness | 65–90 nm | ITO |
Dielectric layer gap fill thickness (inner ring to drain gap) | 150–200 nm | dielectric layer |
Voltage | 3.5–5 V | — |
Voltage | 5.5–7 V | — |
Voltage | 7.5–9 V | — |
Thickness | 2–5 µm | — |
Thickness | 1.5–2.5 µm | — |
Thickness | 1–2 µm | — |
Thickness | 4–6 µm | — |
Cited non-patent literature · 2
indium tin oxide
ITO
dielectric layer
nickel
Ni
chromium
Cr
Source/drain ITO electrode thickness | 85–100 nm | ITO |
Ohmic metal layer (first and second) ITO electrode thickness | 65–90 nm | ITO |
Dielectric layer gap fill thickness (inner ring to drain gap) | 150–200 nm | dielectric layer |
Voltage | 3.5–5 V | — |
Voltage | 5.5–7 V | — |
Voltage | 7.5–9 V | — |
Thickness | 2–5 µm | — |
Thickness | 1.5–2.5 µm | — |
Thickness | 1–2 µm | — |
Thickness | 4–6 µm | — |
Cited non-patent literature · 2
indium tin oxide
ITO
dielectric layer
nickel
Ni
chromium
Cr
Source/drain ITO electrode thickness | 85–100 nm | ITO |
Ohmic metal layer (first and second) ITO electrode thickness | 65–90 nm | ITO |
Dielectric layer gap fill thickness (inner ring to drain gap) | 150–200 nm | dielectric layer |
Voltage | 3.5–5 V | — |
Voltage | 5.5–7 V | — |
Voltage | 7.5–9 V | — |
Thickness | 2–5 µm | — |
Thickness | 1.5–2.5 µm | — |
Thickness | 1–2 µm | — |
Thickness | 4–6 µm | — |
Cited non-patent literature · 2
indium tin oxide
ITO
dielectric layer
nickel
Ni
chromium
Cr
Source/drain ITO electrode thickness | 85–100 nm | ITO |
Ohmic metal layer (first and second) ITO electrode thickness | 65–90 nm | ITO |
Dielectric layer gap fill thickness (inner ring to drain gap) | 150–200 nm | dielectric layer |
Voltage | 3.5–5 V | — |
Voltage | 5.5–7 V | — |
Voltage | 7.5–9 V | — |
Thickness | 2–5 µm | — |
Thickness | 1.5–2.5 µm | — |
Thickness | 1–2 µm | — |
Thickness | 4–6 µm | — |
Cited non-patent literature · 2
