GAN-BASED DEVICE CASCODED WITH AN INTEGRATED FET/SCHOTTKY DIODE DEVICE

Ju Jason Zhang

Patent

Atlas literature

Patent

US 8,084,783

GAN-BASED DEVICE CASCODED WITH AN INTEGRATED FET/SCHOTTKY DIODE DEVICE

Ju Jason Zhang

2011-12-27·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

10 independent · 12 dependent

1
IndependentGaNSienhanced mode GaN FET device (cascoded, monolithically integrated, with diode switching structure)
An enhanced mode GaN ﬁeld eﬀect transistor (FET) device, comprising: a main GaN FET; and a switching device connected in a cascoded conﬁguration with the main GaN FET, wherein the switching device includes a FET connected in parallel to a diode switching structure, wherein the main GaN FET cascoded with the switching device operates as an enhanced mode GaN FET device, wherein the GaN FET is monolithically integrated into the same substrate as the FET and diode switching structure of the switching device.
1. 2
  Dependent← claim 1enhanced mode GaN FET device (cascoded, monolithically integrated, with diode switching structure)
  The enhanced mode GaN FET device of claim 1, wherein the switching device possesses higher speed switching capabilities than those of the main GaN FET.
2. 3
  Dependent← claim 1enhanced mode GaN FET device (cascoded, monolithically integrated, with diode switching structure)
  The enhanced mode GaN FET device of claim 1, wherein the GaN FET is a higher voltage device than the switching device.
3. 4
  Dependent← claim 1enhanced mode GaN FET device (cascoded, monolithically integrated, with diode switching structure)
  The enhanced mode GaN FET device of claim 1, wherein the diode switching structure comprises a Schottky diode.
4. 5
  Dependent← claim 1Sienhanced mode GaN FET device (cascoded, monolithically integrated, with diode switching structure)
  The enhanced mode GaN FET device of claim 1, wherein the FET of the switching device comprises a Si FET.
6
Independent
canceled
7
IndependentGaNSchottky diodeGaN FET device with high voltage GaN FET cascoded with low voltage switching device including Schottky diode, monolithically integrated
An GaN ﬁeld eﬀect transistor (FET) device, comprising: a high voltage GaN FET; and a low voltage switching device connected in a cascoded conﬁguration with the [[main]] high voltage GaN FET, wherein the low voltage switching device includes a FET connected in parallel to a Sohk diode, 2 U.S. Patent Application Serial No.: 12/615,018 Docket No. 056930-011300 wherein the cascoded conﬁguration of the high voltage GaN FET with the low voltage switching device operates as an enhanced mode GaN FET device, wherein the hi g h voltage GaN FET is monolithically integrated into the same substrate as the FET and diode of the low voltage switching device.
1. 8
  Dependent← claim 7GaN FET device with high voltage GaN FET cascoded with low voltage switching device including Schottky diode, monolithically integrated
  The GaN FET device of claim 7, wherein the low voltage switching device possesses higher speed switching capabilities than those of the high voltage GaN FET.
2. 9
  Dependent← claim 7GaNGaN FET device with high voltage GaN FET cascoded with low voltage switching device including Schottky diode, monolithically integrated
  The GaN FET device of claim 7, wherein the FET a low voltage GaN FET.
3. 10
  Dependent← claim 7SiGaN FET device with high voltage GaN FET cascoded with low voltage switching device including Schottky diode, monolithically integrated
  The GaN FET device of claim 7, wherein the comprises a Si FET.
4. 22
  Dependent← claim 7Schottky diodeGaN FET device with high voltage GaN FET cascoded with low voltage switching device including Schottky diode, monolithically integrated
  The GaN FET device of claim 7, wherein the of the low voltage switching device comprises FET of the low voltage switching device (FET) device, comprising: a main GaN FET; and conﬁguration with the main GaN FET, wherein the parallel to a diode switching structure, wherein the operates as an enhanced mode GaN FET higher speed switching capabilities than those of 12, wherein the GaN FET is a higher voltage 12, wherein the diode switching structure 12, wherein the FET of the switching device 12, wherein the GaN FET is monolithically diode switching structure of the switching comprising: a high voltage GaN FET; and a low conﬁguration with the high voltage GaN FET, a FET connected in parallel to a diode, wherein FET with the low voltage switching device wherein the low voltage switching device those of the high voltage GaN FET. FET of the low voltage switching device FET of the low voltage switching device high voltage GaN FET is monolithically diode of the low voltage switching device. diode is a Schottky diode. diode is a Schottky diode.
11
Independent
canceled
12
IndependentGaNenhanced mode GaN FET device (cascoded, switching device with higher speed, with diode switching structure)
An enhanced mode GaN ﬁeld eﬀect transistor a switching device connected in a cascoded switching device includes a FET connected in main GaN FET cascoded with the switching device device, wherein the switching device possesses the main GaN FET.
13
Independentenhanced mode GaN FET device (cascoded, switching device with higher speed, with diode switching structure)
The enhanced mode GaN FET device of claim device than the switching device.
14
Independentenhanced mode GaN FET device (cascoded, switching device with higher speed, with diode switching structure)
The enhanced mode GaN FET device of claim comprises a Schottky diode.
15
IndependentSienhanced mode GaN FET device (cascoded, switching device with higher speed, with diode switching structure)
The enhanced mode GaN FET device of claim comprises a Si FET.
16
Independentenhanced mode GaN FET device (cascoded, switching device with higher speed, with diode switching structure)
The enhanced mode GaN FET device of claim integrated into the same substrate as the FET and device.
17
IndependentGaNGaN FET device with high voltage GaN FET cascoded with low voltage switching device (higher speed), with diode
An GaN ﬁeld eﬀect transistor (FET) device, voltage switching device connected in a cascoded wherein the low voltage switching device includes the cascoded conﬁguration of the high voltage GaN operates as an enhanced mode GaN FET device, possesses higher speed switching capabilities than
1. 18
  Dependent← claim 17GaNGaN FET device with high voltage GaN FET cascoded with low voltage switching device (higher speed), with diode
  The GaN FET device of claim 17, wherein the comprises a low voltage GaN FET.
2. 19
  Dependent← claim 17SiGaN FET device with high voltage GaN FET cascoded with low voltage switching device (higher speed), with diode
  The GaN FET device of claim 17, wherein the comprises a Si FET.
3. 20
  Dependent← claim 17GaN FET device with high voltage GaN FET cascoded with low voltage switching device (higher speed), with diode
  The GaN FET device of claim 17, wherein the integrated into the same substrate as the FET and
4. 21
  Dependent← claim 17Schottky diodeGaN FET device with high voltage GaN FET cascoded with low voltage switching device (higher speed), with diode
  The GaN FET device of claim 17, wherein the

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

enhanced mode GaN FET device (cascoded, monolithically integrated, with diode switching structure)

switching FET (parallel to diode switching structure)switching FET (parallel to diode switching structure)

GaNmain high-voltage GaN FET channel

GaN FET device with high voltage GaN FET cascoded with low voltage switching device including Schottky diode, monolithically integrated

Schottky diodeSchottky diode

low voltage switching FET (parallel to Schottky diode)low voltage switching FET (parallel to Schottky diode)

Materials

Materials described outside the worked examples.

GaN

FET Channel Material

FET Material For Switching Device

Schottky diode

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GAN-BASED DEVICE CASCODED WITH AN INTEGRATED FET/SCHOTTKY DIODE DEVICE | Matter42 Literature