Gate Drivers and Voltage Regulators for Gallium Nitride Devices and Integrated Circuits

Zhanming Li

Patent

Atlas literature

Patent

US 10,686,436

Gate Drivers and Voltage Regulators for Gallium Nitride Devices and Integrated Circuits

Zhanming Li

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

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FIG. 226

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

7 independent · 12 dependent

1
IndependentGaNGaN D-mode HEMT (DHEMT)GaN gate driver circuit
1. A gate driver circuit for a gallium nitride (G aN) power transistor, comprising: an input point that receives an input voltage and an output point that outputs an output voltage to drive the G aN power transistor; a series circuit co m prising at least one GaN D- mode HEMT (D HEMT) with gate-t o- source connection and at least ﬁrst to fourth GaN E-m ode HEMT s (EHEMTs) each w ith d rain-to-, gate connection; an output EHEMT having a drain connected to the input point and a source connected to the output p o int; wherein a drain of the DHEMT is connected to the input point and a source of the DHEMT is connected to a drain of the ﬁrst EHEMT and to a gate of the output EH E MT; wherein a source of the ﬁrst E H EMT is connected to a drain of the second EHEMT, a source of the second EHE M T is connected to a drain of the third EHE M T, a source of the third EHE M T is connected to a drain of the fo u rth EHEMT, and a so u rce of the fourth EHEMT is connected to a circuit c o mmon.
1. 2
  Dependent← claim 1GaN gate driver circuit
  The gate driver circuit o f claim 1, wherein the output EHEMT comprises a source follower am pliﬁer.
2. 3
  Dependent← claim 1GaN gate driver circuit
  The g ate driver circuit of claim 1, further comprising an ampliﬁer; wherein the output point is connected to an input of the ampliﬁer; wherein an output of the ampliﬁer drives the G aN power transistor.
3. 7
  Dependent← claim 1GaNGaN gate driver circuitself-driven GaN power transistor
  The gate driver circuit of claim 1, comprising a GaN power transistor; wherein the G aN power transistor is self-driven.
4. 9
  Dependent← claim 1GaNGaN gate driver circuit
  The gate driver circuit of claim 1, implemented in G aN integrated circuit technology.
5. 11
  Dependent← claim 1GaNGaN gate driver circuitGaN power converter with synchronous rectifier
  A power converter comprising one or more GaN power switches; wherein at least one GaN power switch comprises the gate driver circuit of claim 1.
6. 12
  Dependent← claim 1GaN power converter with synchronous rectifier
  The power converter of claim 1. 1, wherein the G aN power switch is a synchronous rectiﬁer of the power converter.
4
IndependentGaN gate driver circuit
The gate driver circuit of clai m 3, wherein the ampliﬁer input comprises a bootstrap conﬁguration.
13
IndependentGaNGaN D-mode HEMT (DHEMT)GaN gate driver circuit
A method for a gate driver for a gal lium nitride (G aN) power transistor, comprising: 25 pro v iding an input point that receives an input voltage and an output point that outputs an output voltage to drive the GaN p ower transistor; connecting a series circuit comprising at least one Ga N D-mode HEMT (DHEMT) with gate-to- source connection and at least ﬁrst to fourth Ga N E-mode H EMTs (EHEMTs) each with drain-to-gate connection; connecting an output EHEMT having a drain connected to the input point and a source connected to the output point; wherein a drain of the DH E MT is connected to the input point and a source of the DHEMT is connected to a drain of the ﬁrst EHEMT and to a gate of the output EH E MT; wherein a source of the ﬁrst EHEMT is connected to a drain of the second EH E MT, a source of the second EH E MT is connected to a drain of the third E HEMT, a source of the third E H EMT is connected to a drain of the fourth EHE VIT, and a source of the fourth EHE iM T is connected to a circuit common.
1. 14
  Dependent← claim 13GaN gate driver circuit
  The m ethod of claim 13, wherein the output EHE M T comprises a source follower ampliﬁer.
2. 17
  Dependent← claim 13GaNGaN gate driver circuit
  The method of claim 13, comprising i m plementing the gate driver using GaN integrated circuit technology,
3. 19
  Dependent← claim 13GaNGaN power converter with synchronous rectifier
  The method of claim 13, comprising driving a GaN power transistor of a converter circuit.
15
IndependentGaN gate driver circuit
15. The method of c laim 13, further comprising connecting the output point to an input of an ampliﬁer; wherein an outpu t of the ampliﬁer drives the GaN power transistor.
16
IndependentGaNself-driven GaN power transistor
The method of c lai m 13, wherein the GaN power transistor is self-driven.
18
IndependentGaNGaN gate driver circuit
18. The method of clai m 15, comprising implementing the gate driver using GaN integrated circuit technology.
20
IndependentGaN power converter with synchronous rectifier
The method of cl aim 19, wherein the G aN p ow er transistor is a synchronous rectiﬁer of t he converter circu it.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN gate driver circuit

GaN E-mode HEMT (EHEMT)output E-mode HEMT with drain at input point, source at output point (source follower)

GaN E-mode HEMT (EHEMT)first to fourth E-mode HEMTs with drain-to-gate connection (Zener-diode stack)

GaN D-mode HEMT (DHEMT)D-mode HEMT with gate-to-source connection (variable resistor)

self-driven GaN power transistor

GaNGaN power transistor driven by gate driver

GaN power converter with synchronous rectifier

Materials

Materials described outside the worked examples.

gallium nitride

GaN

Semiconductor Substrate And Device Material For HEMTs And Integrated Circuits

GaN D-mode HEMT (DHEMT)

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Zener-limited output voltage (EHEMT stack)	6 V	—
Voltage	650–1200 V

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Gate Drivers and Voltage Regulators for Gallium Nitride Devices and Integrated Circuits | Matter42 Literature