Patent
US 9,202,874A GALLIUM NITRIDE (GaN) DEVICE WITH LEAKAGE CURRENT-BASED OVER-VOLTAGE PROTECTION
Andrew P. Ritenour
US
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Atlas literature
Patent
US 9,202,874Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) device with leakage current-based over-voltage protection comprising: " a semiconductor substrate; " a drain disposed on the semiconductor substrate; " a source disposed on the semiconductor substrate; " a first channel region within the semiconductor substrate and between the drain and the source; [[and]] " a second channel region within the semiconductor substrate and between the drain and the source wherein the second channel region has an enhanced drain induced ba rri er lowering (DI BL) that is greater than the D I BL of the first channel region i " a g ate having gate segments disposed on the substrate adjacent to the second channel region; and " an insulator extendin g between the gate segments and the semiconductor substrate, wherein the DI BL of the second channel region is controlled by a thickness of the insulator.
The GaN device of claim 1 wherein the D I BL of the first channel region ranges from less than around about 0.001 V/V.
The GaN device of claim 1 wherein the first channel region and the second channel region are one and the same.
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 0.1% to around about 10% of a total channel periphery made up of the first channel region and the second channel region.
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 10% to around about 50% of a total channel periphery made up of the first channel region and the second channel region. 3 Attorney Docket No. 2867-1075 Application No. 13/957,698
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 50% to around about 100% of a total channel periphery made up of the first channel region and the second channel region.
The GaN device of claim 1 wherein a drain voltage level for when the second channel region begins to conduct electricity ranges from around about 600 V to around about 1400 V. 4
Cancelled. canceled
Cancelled. canceled
Cancelled. canceled
The GaN device of claim [[6]] 1 wherein the D I BL of the second channel region is controlled by an interval distance between adjacent gate segments. 2 Attorney Docket No. 2867-1075 Application No. 13/957,698
The GaN device of claim 7 wherein the gate is directly disposed on the semiconductor substrate.
Cancelled. canceled
(Cu rr ently Amended) The GaN device of claim [[10]] 9 wherein the DIBL of the second channel region is further controlled by a distance of the gate strap from the semiconductor substrate. currently amended
Cancelled. canceled
Cancelled. canceled
The GaN device of claim [[13]] 1 further including a gate strap that electrically couples the adjacent gate segments.
The GaN device of claim 14 wherein the DIBL of the second channel region is further controlled by a distance of the gate strap from the semiconductor substrate.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with leakage current-based over-voltage protection
Materials described outside the worked examples.
gallium nitride
GaN
insulator
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
DIBL of first channel region (upper bound) | ≤ 0.001 V/V | GaN |
DIBL of second channel region (enhanced) | 0.003–0.03 V/V |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,202,874Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) device with leakage current-based over-voltage protection comprising: " a semiconductor substrate; " a drain disposed on the semiconductor substrate; " a source disposed on the semiconductor substrate; " a first channel region within the semiconductor substrate and between the drain and the source; [[and]] " a second channel region within the semiconductor substrate and between the drain and the source wherein the second channel region has an enhanced drain induced ba rri er lowering (DI BL) that is greater than the D I BL of the first channel region i " a g ate having gate segments disposed on the substrate adjacent to the second channel region; and " an insulator extendin g between the gate segments and the semiconductor substrate, wherein the DI BL of the second channel region is controlled by a thickness of the insulator.
The GaN device of claim 1 wherein the D I BL of the first channel region ranges from less than around about 0.001 V/V.
The GaN device of claim 1 wherein the first channel region and the second channel region are one and the same.
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 0.1% to around about 10% of a total channel periphery made up of the first channel region and the second channel region.
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 10% to around about 50% of a total channel periphery made up of the first channel region and the second channel region. 3 Attorney Docket No. 2867-1075 Application No. 13/957,698
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 50% to around about 100% of a total channel periphery made up of the first channel region and the second channel region.
The GaN device of claim 1 wherein a drain voltage level for when the second channel region begins to conduct electricity ranges from around about 600 V to around about 1400 V. 4
Cancelled. canceled
Cancelled. canceled
Cancelled. canceled
The GaN device of claim [[6]] 1 wherein the D I BL of the second channel region is controlled by an interval distance between adjacent gate segments. 2 Attorney Docket No. 2867-1075 Application No. 13/957,698
The GaN device of claim 7 wherein the gate is directly disposed on the semiconductor substrate.
Cancelled. canceled
(Cu rr ently Amended) The GaN device of claim [[10]] 9 wherein the DIBL of the second channel region is further controlled by a distance of the gate strap from the semiconductor substrate. currently amended
Cancelled. canceled
Cancelled. canceled
The GaN device of claim [[13]] 1 further including a gate strap that electrically couples the adjacent gate segments.
The GaN device of claim 14 wherein the DIBL of the second channel region is further controlled by a distance of the gate strap from the semiconductor substrate.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with leakage current-based over-voltage protection
Materials described outside the worked examples.
gallium nitride
GaN
insulator
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
DIBL of first channel region (upper bound) | ≤ 0.001 V/V | GaN |
DIBL of second channel region (enhanced) | 0.003–0.03 V/V |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,202,874Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) device with leakage current-based over-voltage protection comprising: " a semiconductor substrate; " a drain disposed on the semiconductor substrate; " a source disposed on the semiconductor substrate; " a first channel region within the semiconductor substrate and between the drain and the source; [[and]] " a second channel region within the semiconductor substrate and between the drain and the source wherein the second channel region has an enhanced drain induced ba rri er lowering (DI BL) that is greater than the D I BL of the first channel region i " a g ate having gate segments disposed on the substrate adjacent to the second channel region; and " an insulator extendin g between the gate segments and the semiconductor substrate, wherein the DI BL of the second channel region is controlled by a thickness of the insulator.
The GaN device of claim 1 wherein the D I BL of the first channel region ranges from less than around about 0.001 V/V.
The GaN device of claim 1 wherein the first channel region and the second channel region are one and the same.
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 0.1% to around about 10% of a total channel periphery made up of the first channel region and the second channel region.
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 10% to around about 50% of a total channel periphery made up of the first channel region and the second channel region. 3 Attorney Docket No. 2867-1075 Application No. 13/957,698
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 50% to around about 100% of a total channel periphery made up of the first channel region and the second channel region.
The GaN device of claim 1 wherein a drain voltage level for when the second channel region begins to conduct electricity ranges from around about 600 V to around about 1400 V. 4
Cancelled. canceled
Cancelled. canceled
Cancelled. canceled
The GaN device of claim [[6]] 1 wherein the D I BL of the second channel region is controlled by an interval distance between adjacent gate segments. 2 Attorney Docket No. 2867-1075 Application No. 13/957,698
The GaN device of claim 7 wherein the gate is directly disposed on the semiconductor substrate.
Cancelled. canceled
(Cu rr ently Amended) The GaN device of claim [[10]] 9 wherein the DIBL of the second channel region is further controlled by a distance of the gate strap from the semiconductor substrate. currently amended
Cancelled. canceled
Cancelled. canceled
The GaN device of claim [[13]] 1 further including a gate strap that electrically couples the adjacent gate segments.
The GaN device of claim 14 wherein the DIBL of the second channel region is further controlled by a distance of the gate strap from the semiconductor substrate.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with leakage current-based over-voltage protection
Materials described outside the worked examples.
gallium nitride
GaN
insulator
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
DIBL of first channel region (upper bound) | ≤ 0.001 V/V | GaN |
DIBL of second channel region (enhanced) | 0.003–0.03 V/V |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,202,874Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN) device with leakage current-based over-voltage protection comprising: " a semiconductor substrate; " a drain disposed on the semiconductor substrate; " a source disposed on the semiconductor substrate; " a first channel region within the semiconductor substrate and between the drain and the source; [[and]] " a second channel region within the semiconductor substrate and between the drain and the source wherein the second channel region has an enhanced drain induced ba rri er lowering (DI BL) that is greater than the D I BL of the first channel region i " a g ate having gate segments disposed on the substrate adjacent to the second channel region; and " an insulator extendin g between the gate segments and the semiconductor substrate, wherein the DI BL of the second channel region is controlled by a thickness of the insulator.
The GaN device of claim 1 wherein the D I BL of the first channel region ranges from less than around about 0.001 V/V.
The GaN device of claim 1 wherein the first channel region and the second channel region are one and the same.
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 0.1% to around about 10% of a total channel periphery made up of the first channel region and the second channel region.
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 10% to around about 50% of a total channel periphery made up of the first channel region and the second channel region. 3 Attorney Docket No. 2867-1075 Application No. 13/957,698
The GaN device of claim 1 wherein the second channel region accounts for a range of around about 50% to around about 100% of a total channel periphery made up of the first channel region and the second channel region.
The GaN device of claim 1 wherein a drain voltage level for when the second channel region begins to conduct electricity ranges from around about 600 V to around about 1400 V. 4
Cancelled. canceled
Cancelled. canceled
Cancelled. canceled
The GaN device of claim [[6]] 1 wherein the D I BL of the second channel region is controlled by an interval distance between adjacent gate segments. 2 Attorney Docket No. 2867-1075 Application No. 13/957,698
The GaN device of claim 7 wherein the gate is directly disposed on the semiconductor substrate.
Cancelled. canceled
(Cu rr ently Amended) The GaN device of claim [[10]] 9 wherein the DIBL of the second channel region is further controlled by a distance of the gate strap from the semiconductor substrate. currently amended
Cancelled. canceled
Cancelled. canceled
The GaN device of claim [[13]] 1 further including a gate strap that electrically couples the adjacent gate segments.
The GaN device of claim 14 wherein the DIBL of the second channel region is further controlled by a distance of the gate strap from the semiconductor substrate.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT with leakage current-based over-voltage protection
Materials described outside the worked examples.
gallium nitride
GaN
insulator
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
DIBL of first channel region (upper bound) | ≤ 0.001 V/V | GaN |
DIBL of second channel region (enhanced) | 0.003–0.03 V/V |
Related documents with shared materials, methods, properties, or citations.
Drain voltage level for second channel region conduction onset | 600–1400 V | GaN |
Drain voltage level for second channel region conduction onset | 600–1400 V | GaN |
Drain voltage level for second channel region conduction onset | 600–1400 V | GaN |
Drain voltage level for second channel region conduction onset | 600–1400 V | GaN |