CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO INTERNAL REGROWTH INTERFACES

Jinqiao Xie

Patent

Atlas literature

Patent

US 10,177,247

CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO INTERNAL REGROWTH INTERFACES

Jinqiao Xie

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 19 dependent

1
IndependentGaNmask structure materialprecursor cell for transistor (GaN PN structure)
A precursor cell for a transistor comprising: a foundation structure; a mask structure over the foundation structure having an opening that exposes a ﬁrst area of a top surface of the foundation structure; and a gallium nitride (GaN) PN structure disposed over the ﬁrst area and at least a portion of the mask structure, the GaN PN structure having a continuous crystalline structure with no internal regrowth interfaces and comprising: a drift region doped with a ﬁrst dopant of a ﬁrst polarity over the ﬁrst area; and a control region doped with a second dopant of a second polarity laterally adjacent the drift region, wherein the ﬁrst polarity is opposite the second polarity and a PN junction is formed between the drift region and the control region. Original
1. 2
  Dependent← claim 1GaNprecursor cell for transistor (GaN PN structure)
  The precursor cell of claim 1, further comprising a regrowth interface between the foundation structure and the GaN PN structure. Original
2. 3
  Dependent← claim 1GaNprecursor cell for transistor (GaN PN structure)
  The precursor cell for the transistor of claim 1, wherein: the foundation structure comprises a substrate doped with a dopant of the ﬁrst polarity; and the drift region and the mask structure are directly on the substrate. Original
3. 6
  Dependent← claim 1GaNprecursor cell for transistor (GaN PN structure)
  The precursor cell of claim 1, wherein the foundation structure comprises a substrate doped with a dopant of the ﬁrst polarity and a drift layer doped with the dopant of the ﬁrst polarity over the substrate. Original
13
IndependentGaNmask structure materialprecursor cell for transistor (GaN PN structure)
A method comprising: providing a foundation structure doped with a dopant of a ﬁrst polarity; forming a mask structure over a top surface of the foundation structure, wherein the mask structure has an opening that exposes a ﬁrst area of the top surface of the foundation structure; and forming a gallium nitride (GaN) PN structure having a continuous crystalline structure with no internal regrowth interfaces over the ﬁrst area and at least a portion of the mask structure in a continuous growth phase by regrowing a drift region of the GaN PN structure doped with the dopant of the ﬁrst polarity in a substantially vertical direction over the ﬁrst area and then growing a control region doped with a dopant of a second polarity in a substantially lateral direction such that the control region is laterally adjacent the drift region, wherein the ﬁrst polarity is opposite the second polarity and a PN junction having no internal regrowth interfaces is formed between the drift region and the control region. Original
1. 14
  Dependent← claim 13GaN
  The method of claim 13, wherein a regrowth interface is provided between the foundation structure and the GaN PN structure. Original
2. 15
  Dependent← claim 13GaN
  The method of claim 13, further comprising forming the mask structure and the drift region directly on the foundation structure, wherein the foundation structure comprises a substrate doped with the dopant of the ﬁrst polarity. Original
3. 17
  Dependent← claim 13GaN
  The method of claim 13, wherein providing the foundation structure comprises providing a substrate doped with the dopant of the ﬁrst polarity and forming a drift layer doped with the dopant of the ﬁrst polarity over the substrate. Original
4. 19
  Dependent← claim 13GaN
  The method of claim 13, further comprising using epitaxial lateral overgrowth (ELO) to promote a substantially lateral overgrowth of the GaN PN structure comprising simultaneously doping the control region with the dopant of the second polarity. Original
5. 20
  Dependent← claim 13GaN
  The method of claim 13, wherein regrowing the drift region in the substantially vertical direction comprises: simultaneously doping the drift region with the dopant of the ﬁrst polarity; and using epitaxial lateral overgrowth (ELO) to promote a substantially lateral overgrowth of the GaN PN structure comprising simultaneously doping the control region with the dopant of the second polarity. Original
6. 21
  Dependent← claim 13GaN
  The method of claim 13, wherein the GaN PN structure is grown using metal- organic chemical vapor deposition (MOCVD) or Hydride Vapor Phase Epitaxy (H V PE). Original

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

precursor cell for transistor (GaN PN structure)

GaNcontrol region (P-type GaN PN structure, laterally adjacent drift region)

GaNdrift region (N-type GaN PN structure)

mask structure materialmask structure

GaNfoundation structure (substrate/drift layer)

vertical JFET precursor cell with drain/gate/source contacts

GaNcontrol region (P-doped GaN PN structure)

Materials

Materials described outside the worked examples.

gallium nitride (GaN)

GaN

PN Structure Material; Substrate And Drift Layer Material

mask structure material

Selective-Area Growth Mask

Process steps

Additional fabrication and treatment steps described in the patent.

Epitaxial Regrowth

Step 1

Process details

method:MOCVD or HVPE

growth mode:continuous growth phase with epitaxial lateral overgrowth (ELO)

lateral growth:control region doped with second polarity dopant grown in substantially lateral direction

vertical growth:drift region doped with first polarity dopant grown in substantially vertical direction

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	50–500 nm	—
Voltage	≥ 1 V

Why these are connected

Related documents with shared materials, methods, properties, or citations.

CONTINUOUS CRYSTALLINE GALLIUM NITRIDE (GaN) PN STRUCTURE WITH NO INTERNAL REGROWTH INTERFACES | Matter42 Literature