Patent
Atlas literature
Patent
US 11,838,017 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a GaN HEMT in a common source configuration and in a 4QS merged drain configuration;
FIG. 2 is a cross-section and top plan view of a GaN HEMT in a common source configuration and in a 4QS 5 merged drain configuration;
FIG. 3 is a schematic diagram of a substrate voltage management circuit in accordance with one or more embodi- ments of the present disclosure;
FIG. 4 is a schematic diagram of a substrate voltage 10 management circuit in accordance with one or more alter- nate embodiments of the present disclosure; and
FIG. 5 is a flowchart of a method of performing substrate voltage management in accordance with one or more alter- nate embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Apparatus for performing substrate voltage manage-ment, comprising: an active substrate voltage management circuit configured to be coupled to a substrate of a bidirectional gallium nitride high electron mobility transistor comprising a first source and a second source, wherein the active substrate voltage management circuit comprises a first circuit that is connected to the first source and a second circuit that is connected to the second source such that when the bidirectional gallium nitride high electron mobility transistor is operational one of the first circuit or the second circuit connects one of the first source to the substrate or the second source to the substrate, respectively, to control a bias voltage applied to the substrate, and wherein a first resistor of the first circuit and a second resistor of the second circuit are connected in parallel to each other and the substrate to protect a first tran-sistor of the first circuit and a second transistor of the second circuit from an overcurrent situation when the first transistor and the second transistor are both on together and when the bidirectional gallium nitride high electron mobility transistor device is not.
The apparatus of claim 1, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned off and a voltage on the first source is greater than a voltage on the second source, a transistor of the second circuit is turned on, which connects the substrate to the second source, and vice versa.
The apparatus of claim 1, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned on, corresponding transistors of the first circuit and the second circuit are turned on, such that the substrate is connected to both the first source and the second source.
The apparatus of claim 1, wherein, when the bidirec-tional gallium nitride high electron mobility transistor is dynamically changing state from on to off or off to on, a changing voltage (dv/dt) across first source and the second source enables a higher gate current for corresponding transistors of the first circuit and the second circuit to be generated.
The apparatus of claim 1, wherein the first circuit and the second circuit are identical.
The apparatus of claim 1, wherein the first circuit and the second circuit each comprises: three additional resistors; a capacitor; a Zener diode; and a transistor.
The apparatus of claim 1, wherein the active substrate voltage management circuit is one of formed using discrete components or integrated into at least one of a silicon layer or a gallium nitride layer of the bidirectional gallium nitride high electron mobility transistor.
A method of performing substrate voltage manage-ment, comprising: operating a bidirectional gallium nitride high electron mobility transistor comprising a first source and a second source; and operating an active substrate voltage management circuit comprising a first circuit that is connected to the first source and a second circuit that is connected to the second source such that when the bidirectional gallium nitride high electron mobility transistor is operational one of the first circuit or the second circuit connects one of the first source to a substrate or the second source to the substrate, respectively, to control a bias voltage applied to the substrate, wherein a first resistor of the first circuit and a second resistor of the second circuit are connected in parallel to each other and the substrate to protect a first tran-sistor of the first circuit and a second transistor of the second circuit from an overcurrent situation when the first transistor and the second transistor are both on together and when the bidirectional gallium nitride high electron mobility transistor device is not.
The method of claim 11, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned off and a voltage on the first source is greater than a voltage on the second source, further comprising turning on a transistor of the second circuit, which connects the substrate to the second source, and vice versa.
The method of claim 11, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned on, further comprising turning on corresponding B₂ transistors of the first circuit and the second circuit, such that the substrate is connected to both the first source and the second source.
The method of claim 11, wherein, when the bidirec-tional gallium nitride high electron mobility transistor is dynamically changing state from on to off or off to on, a changing voltage (dv/dt) across first source and the second source enables a higher gate current for corresponding transistors of the first circuit and the second circuit to be generated.
The method of claim 11, wherein the first circuit and the second circuit are identical.
The method of claim 11, wherein the first circuit and the second circuit each comprises: three additional resistors; a capacitor; a Zener diode; and a transistor.
The method of claim 11, wherein the active substrate voltage management circuit is one of formed using discrete components or integrated into at least one of a silicon layer or a gallium nitride layer of the bidirectional gallium nitride high electron mobility transistor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
bidirectional gallium nitride high electron mobility transistor (GaN HEMT 4QS) with active substrate voltage management circuit
substrate voltage management circuit (embodiment: circuit 300)
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Patents and literature cited by this patent (applicant and examiner references).
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Patent
Atlas literature
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US 11,838,017 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a GaN HEMT in a common source configuration and in a 4QS merged drain configuration;
FIG. 2 is a cross-section and top plan view of a GaN HEMT in a common source configuration and in a 4QS 5 merged drain configuration;
FIG. 3 is a schematic diagram of a substrate voltage management circuit in accordance with one or more embodi- ments of the present disclosure;
FIG. 4 is a schematic diagram of a substrate voltage 10 management circuit in accordance with one or more alter- nate embodiments of the present disclosure; and
FIG. 5 is a flowchart of a method of performing substrate voltage management in accordance with one or more alter- nate embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Apparatus for performing substrate voltage manage-ment, comprising: an active substrate voltage management circuit configured to be coupled to a substrate of a bidirectional gallium nitride high electron mobility transistor comprising a first source and a second source, wherein the active substrate voltage management circuit comprises a first circuit that is connected to the first source and a second circuit that is connected to the second source such that when the bidirectional gallium nitride high electron mobility transistor is operational one of the first circuit or the second circuit connects one of the first source to the substrate or the second source to the substrate, respectively, to control a bias voltage applied to the substrate, and wherein a first resistor of the first circuit and a second resistor of the second circuit are connected in parallel to each other and the substrate to protect a first tran-sistor of the first circuit and a second transistor of the second circuit from an overcurrent situation when the first transistor and the second transistor are both on together and when the bidirectional gallium nitride high electron mobility transistor device is not.
The apparatus of claim 1, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned off and a voltage on the first source is greater than a voltage on the second source, a transistor of the second circuit is turned on, which connects the substrate to the second source, and vice versa.
The apparatus of claim 1, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned on, corresponding transistors of the first circuit and the second circuit are turned on, such that the substrate is connected to both the first source and the second source.
The apparatus of claim 1, wherein, when the bidirec-tional gallium nitride high electron mobility transistor is dynamically changing state from on to off or off to on, a changing voltage (dv/dt) across first source and the second source enables a higher gate current for corresponding transistors of the first circuit and the second circuit to be generated.
The apparatus of claim 1, wherein the first circuit and the second circuit are identical.
The apparatus of claim 1, wherein the first circuit and the second circuit each comprises: three additional resistors; a capacitor; a Zener diode; and a transistor.
The apparatus of claim 1, wherein the active substrate voltage management circuit is one of formed using discrete components or integrated into at least one of a silicon layer or a gallium nitride layer of the bidirectional gallium nitride high electron mobility transistor.
A method of performing substrate voltage manage-ment, comprising: operating a bidirectional gallium nitride high electron mobility transistor comprising a first source and a second source; and operating an active substrate voltage management circuit comprising a first circuit that is connected to the first source and a second circuit that is connected to the second source such that when the bidirectional gallium nitride high electron mobility transistor is operational one of the first circuit or the second circuit connects one of the first source to a substrate or the second source to the substrate, respectively, to control a bias voltage applied to the substrate, wherein a first resistor of the first circuit and a second resistor of the second circuit are connected in parallel to each other and the substrate to protect a first tran-sistor of the first circuit and a second transistor of the second circuit from an overcurrent situation when the first transistor and the second transistor are both on together and when the bidirectional gallium nitride high electron mobility transistor device is not.
The method of claim 11, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned off and a voltage on the first source is greater than a voltage on the second source, further comprising turning on a transistor of the second circuit, which connects the substrate to the second source, and vice versa.
The method of claim 11, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned on, further comprising turning on corresponding B₂ transistors of the first circuit and the second circuit, such that the substrate is connected to both the first source and the second source.
The method of claim 11, wherein, when the bidirec-tional gallium nitride high electron mobility transistor is dynamically changing state from on to off or off to on, a changing voltage (dv/dt) across first source and the second source enables a higher gate current for corresponding transistors of the first circuit and the second circuit to be generated.
The method of claim 11, wherein the first circuit and the second circuit are identical.
The method of claim 11, wherein the first circuit and the second circuit each comprises: three additional resistors; a capacitor; a Zener diode; and a transistor.
The method of claim 11, wherein the active substrate voltage management circuit is one of formed using discrete components or integrated into at least one of a silicon layer or a gallium nitride layer of the bidirectional gallium nitride high electron mobility transistor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
bidirectional gallium nitride high electron mobility transistor (GaN HEMT 4QS) with active substrate voltage management circuit
substrate voltage management circuit (embodiment: circuit 300)
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 12
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Patent
Atlas literature
Patent
US 11,838,017 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a GaN HEMT in a common source configuration and in a 4QS merged drain configuration;
FIG. 2 is a cross-section and top plan view of a GaN HEMT in a common source configuration and in a 4QS 5 merged drain configuration;
FIG. 3 is a schematic diagram of a substrate voltage management circuit in accordance with one or more embodi- ments of the present disclosure;
FIG. 4 is a schematic diagram of a substrate voltage 10 management circuit in accordance with one or more alter- nate embodiments of the present disclosure; and
FIG. 5 is a flowchart of a method of performing substrate voltage management in accordance with one or more alter- nate embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Apparatus for performing substrate voltage manage-ment, comprising: an active substrate voltage management circuit configured to be coupled to a substrate of a bidirectional gallium nitride high electron mobility transistor comprising a first source and a second source, wherein the active substrate voltage management circuit comprises a first circuit that is connected to the first source and a second circuit that is connected to the second source such that when the bidirectional gallium nitride high electron mobility transistor is operational one of the first circuit or the second circuit connects one of the first source to the substrate or the second source to the substrate, respectively, to control a bias voltage applied to the substrate, and wherein a first resistor of the first circuit and a second resistor of the second circuit are connected in parallel to each other and the substrate to protect a first tran-sistor of the first circuit and a second transistor of the second circuit from an overcurrent situation when the first transistor and the second transistor are both on together and when the bidirectional gallium nitride high electron mobility transistor device is not.
The apparatus of claim 1, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned off and a voltage on the first source is greater than a voltage on the second source, a transistor of the second circuit is turned on, which connects the substrate to the second source, and vice versa.
The apparatus of claim 1, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned on, corresponding transistors of the first circuit and the second circuit are turned on, such that the substrate is connected to both the first source and the second source.
The apparatus of claim 1, wherein, when the bidirec-tional gallium nitride high electron mobility transistor is dynamically changing state from on to off or off to on, a changing voltage (dv/dt) across first source and the second source enables a higher gate current for corresponding transistors of the first circuit and the second circuit to be generated.
The apparatus of claim 1, wherein the first circuit and the second circuit are identical.
The apparatus of claim 1, wherein the first circuit and the second circuit each comprises: three additional resistors; a capacitor; a Zener diode; and a transistor.
The apparatus of claim 1, wherein the active substrate voltage management circuit is one of formed using discrete components or integrated into at least one of a silicon layer or a gallium nitride layer of the bidirectional gallium nitride high electron mobility transistor.
A method of performing substrate voltage manage-ment, comprising: operating a bidirectional gallium nitride high electron mobility transistor comprising a first source and a second source; and operating an active substrate voltage management circuit comprising a first circuit that is connected to the first source and a second circuit that is connected to the second source such that when the bidirectional gallium nitride high electron mobility transistor is operational one of the first circuit or the second circuit connects one of the first source to a substrate or the second source to the substrate, respectively, to control a bias voltage applied to the substrate, wherein a first resistor of the first circuit and a second resistor of the second circuit are connected in parallel to each other and the substrate to protect a first tran-sistor of the first circuit and a second transistor of the second circuit from an overcurrent situation when the first transistor and the second transistor are both on together and when the bidirectional gallium nitride high electron mobility transistor device is not.
The method of claim 11, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned off and a voltage on the first source is greater than a voltage on the second source, further comprising turning on a transistor of the second circuit, which connects the substrate to the second source, and vice versa.
The method of claim 11, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned on, further comprising turning on corresponding B₂ transistors of the first circuit and the second circuit, such that the substrate is connected to both the first source and the second source.
The method of claim 11, wherein, when the bidirec-tional gallium nitride high electron mobility transistor is dynamically changing state from on to off or off to on, a changing voltage (dv/dt) across first source and the second source enables a higher gate current for corresponding transistors of the first circuit and the second circuit to be generated.
The method of claim 11, wherein the first circuit and the second circuit are identical.
The method of claim 11, wherein the first circuit and the second circuit each comprises: three additional resistors; a capacitor; a Zener diode; and a transistor.
The method of claim 11, wherein the active substrate voltage management circuit is one of formed using discrete components or integrated into at least one of a silicon layer or a gallium nitride layer of the bidirectional gallium nitride high electron mobility transistor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
bidirectional gallium nitride high electron mobility transistor (GaN HEMT 4QS) with active substrate voltage management circuit
substrate voltage management circuit (embodiment: circuit 300)
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 12
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,838,017 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram of a GaN HEMT in a common source configuration and in a 4QS merged drain configuration;
FIG. 2 is a cross-section and top plan view of a GaN HEMT in a common source configuration and in a 4QS 5 merged drain configuration;
FIG. 3 is a schematic diagram of a substrate voltage management circuit in accordance with one or more embodi- ments of the present disclosure;
FIG. 4 is a schematic diagram of a substrate voltage 10 management circuit in accordance with one or more alter- nate embodiments of the present disclosure; and
FIG. 5 is a flowchart of a method of performing substrate voltage management in accordance with one or more alter- nate embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Apparatus for performing substrate voltage manage-ment, comprising: an active substrate voltage management circuit configured to be coupled to a substrate of a bidirectional gallium nitride high electron mobility transistor comprising a first source and a second source, wherein the active substrate voltage management circuit comprises a first circuit that is connected to the first source and a second circuit that is connected to the second source such that when the bidirectional gallium nitride high electron mobility transistor is operational one of the first circuit or the second circuit connects one of the first source to the substrate or the second source to the substrate, respectively, to control a bias voltage applied to the substrate, and wherein a first resistor of the first circuit and a second resistor of the second circuit are connected in parallel to each other and the substrate to protect a first tran-sistor of the first circuit and a second transistor of the second circuit from an overcurrent situation when the first transistor and the second transistor are both on together and when the bidirectional gallium nitride high electron mobility transistor device is not.
The apparatus of claim 1, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned off and a voltage on the first source is greater than a voltage on the second source, a transistor of the second circuit is turned on, which connects the substrate to the second source, and vice versa.
The apparatus of claim 1, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned on, corresponding transistors of the first circuit and the second circuit are turned on, such that the substrate is connected to both the first source and the second source.
The apparatus of claim 1, wherein, when the bidirec-tional gallium nitride high electron mobility transistor is dynamically changing state from on to off or off to on, a changing voltage (dv/dt) across first source and the second source enables a higher gate current for corresponding transistors of the first circuit and the second circuit to be generated.
The apparatus of claim 1, wherein the first circuit and the second circuit are identical.
The apparatus of claim 1, wherein the first circuit and the second circuit each comprises: three additional resistors; a capacitor; a Zener diode; and a transistor.
The apparatus of claim 1, wherein the active substrate voltage management circuit is one of formed using discrete components or integrated into at least one of a silicon layer or a gallium nitride layer of the bidirectional gallium nitride high electron mobility transistor.
A method of performing substrate voltage manage-ment, comprising: operating a bidirectional gallium nitride high electron mobility transistor comprising a first source and a second source; and operating an active substrate voltage management circuit comprising a first circuit that is connected to the first source and a second circuit that is connected to the second source such that when the bidirectional gallium nitride high electron mobility transistor is operational one of the first circuit or the second circuit connects one of the first source to a substrate or the second source to the substrate, respectively, to control a bias voltage applied to the substrate, wherein a first resistor of the first circuit and a second resistor of the second circuit are connected in parallel to each other and the substrate to protect a first tran-sistor of the first circuit and a second transistor of the second circuit from an overcurrent situation when the first transistor and the second transistor are both on together and when the bidirectional gallium nitride high electron mobility transistor device is not.
The method of claim 11, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned off and a voltage on the first source is greater than a voltage on the second source, further comprising turning on a transistor of the second circuit, which connects the substrate to the second source, and vice versa.
The method of claim 11, wherein when the bidirec-tional gallium nitride high electron mobility transistor is turned on, further comprising turning on corresponding B₂ transistors of the first circuit and the second circuit, such that the substrate is connected to both the first source and the second source.
The method of claim 11, wherein, when the bidirec-tional gallium nitride high electron mobility transistor is dynamically changing state from on to off or off to on, a changing voltage (dv/dt) across first source and the second source enables a higher gate current for corresponding transistors of the first circuit and the second circuit to be generated.
The method of claim 11, wherein the first circuit and the second circuit are identical.
The method of claim 11, wherein the first circuit and the second circuit each comprises: three additional resistors; a capacitor; a Zener diode; and a transistor.
The method of claim 11, wherein the active substrate voltage management circuit is one of formed using discrete components or integrated into at least one of a silicon layer or a gallium nitride layer of the bidirectional gallium nitride high electron mobility transistor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
bidirectional gallium nitride high electron mobility transistor (GaN HEMT 4QS) with active substrate voltage management circuit
substrate voltage management circuit (embodiment: circuit 300)
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 12
Related documents with shared materials, methods, properties, or citations.
Cited non-patent literature · 1
Cited non-patent literature · 1
Cited non-patent literature · 1
Cited non-patent literature · 1
