A power amplifier system, comprising: a voltage source; a circuit board with an electronic variable resistor inte-grated circuit including a preset resistance value and a measure point coupled to the electronic variable resis-tor integrated circuit allowing a micro-controller unit of a test fixture to set the predetermined resistance value in the electronic variable resistor integrated circuit, the electronic variable resistor integrated circuit coupled to the voltage source for outputting a bias voltage; and a power amplifier including a GaN transistor and a bias input coupled to the electronic variable resistor inte-grated circuit, wherein the preset resistance value is determined by a quiescent current of the GaN transistor measured by the micro-controller unit of the test fixture from the measure point prior to installation of the power amplifier in an electronic device.

A transceiver device comprising: 5 a circuit board including a first electronic adjustable resistor and a first voltage output; and a voltage source coupled to the first electronic adjustable resistor to output a first predetermined bias voltage at the first voltage output; and 10 a first GaN power amplifier including a GaN transistor and a bias voltage input to adjust for a quiescent current of the GaN transistor, the bias voltage input coupled to the first electronic adjustable resistor, wherein the first electronic adjustable resistor is set at a first predeter-mined resistance value to produce the first predeter-mined bias voltage, the first predetermined bias voltage value determined by measuring the quiescent current of the GaN transistor of the first GaN power amplifier during production of the transceiver device.

A method of setting an adjustable resistor for adjusting quiescent current in a GaN transistor of a power amplifier on a production component, the method comprising: measuring a quiescent current on the GaN power ampli-fier via a micro-controller unit coupled to a current sensor on a test fixture including a measure point coupled to an electronic adjustable resistor; determining a resistance value for outputting of a bias voltage value to adjust for the quiescent current of the GaN transistor via the micro-controller unit; storing the resistance value in the electronic adjustable resistor via the micro-controller unit; and coupling the electronic adjustable resistor to an output voltage circuit to provide voltage at the bias voltage value to a voltage bias input of the power amplifier.

A power amplifier system, comprising: a voltage source; a circuit board with an electronic variable resistor inte-grated circuit including a preset resistance value and a measure point coupled to the electronic variable resis-tor integrated circuit allowing a micro-controller unit of a test fixture to set the predetermined resistance value in the electronic variable resistor integrated circuit, the electronic variable resistor integrated circuit coupled to the voltage source for outputting a bias voltage; and a power amplifier including a GaN transistor and a bias input coupled to the electronic variable resistor inte-grated circuit, wherein the preset resistance value is determined by a quiescent current of the GaN transistor measured by the micro-controller unit of the test fixture from the measure point prior to installation of the power amplifier in an electronic device.

A transceiver device comprising: 5 a circuit board including a first electronic adjustable resistor and a first voltage output; and a voltage source coupled to the first electronic adjustable resistor to output a first predetermined bias voltage at the first voltage output; and 10 a first GaN power amplifier including a GaN transistor and a bias voltage input to adjust for a quiescent current of the GaN transistor, the bias voltage input coupled to the first electronic adjustable resistor, wherein the first electronic adjustable resistor is set at a first predeter-mined resistance value to produce the first predeter-mined bias voltage, the first predetermined bias voltage value determined by measuring the quiescent current of the GaN transistor of the first GaN power amplifier during production of the transceiver device.

A method of setting an adjustable resistor for adjusting quiescent current in a GaN transistor of a power amplifier on a production component, the method comprising: measuring a quiescent current on the GaN power ampli-fier via a micro-controller unit coupled to a current sensor on a test fixture including a measure point coupled to an electronic adjustable resistor; determining a resistance value for outputting of a bias voltage value to adjust for the quiescent current of the GaN transistor via the micro-controller unit; storing the resistance value in the electronic adjustable resistor via the micro-controller unit; and coupling the electronic adjustable resistor to an output voltage circuit to provide voltage at the bias voltage value to a voltage bias input of the power amplifier.

A power amplifier system, comprising: a voltage source; a circuit board with an electronic variable resistor inte-grated circuit including a preset resistance value and a measure point coupled to the electronic variable resis-tor integrated circuit allowing a micro-controller unit of a test fixture to set the predetermined resistance value in the electronic variable resistor integrated circuit, the electronic variable resistor integrated circuit coupled to the voltage source for outputting a bias voltage; and a power amplifier including a GaN transistor and a bias input coupled to the electronic variable resistor inte-grated circuit, wherein the preset resistance value is determined by a quiescent current of the GaN transistor measured by the micro-controller unit of the test fixture from the measure point prior to installation of the power amplifier in an electronic device.

A transceiver device comprising: 5 a circuit board including a first electronic adjustable resistor and a first voltage output; and a voltage source coupled to the first electronic adjustable resistor to output a first predetermined bias voltage at the first voltage output; and 10 a first GaN power amplifier including a GaN transistor and a bias voltage input to adjust for a quiescent current of the GaN transistor, the bias voltage input coupled to the first electronic adjustable resistor, wherein the first electronic adjustable resistor is set at a first predeter-mined resistance value to produce the first predeter-mined bias voltage, the first predetermined bias voltage value determined by measuring the quiescent current of the GaN transistor of the first GaN power amplifier during production of the transceiver device.

A method of setting an adjustable resistor for adjusting quiescent current in a GaN transistor of a power amplifier on a production component, the method comprising: measuring a quiescent current on the GaN power ampli-fier via a micro-controller unit coupled to a current sensor on a test fixture including a measure point coupled to an electronic adjustable resistor; determining a resistance value for outputting of a bias voltage value to adjust for the quiescent current of the GaN transistor via the micro-controller unit; storing the resistance value in the electronic adjustable resistor via the micro-controller unit; and coupling the electronic adjustable resistor to an output voltage circuit to provide voltage at the bias voltage value to a voltage bias input of the power amplifier.

A power amplifier system, comprising: a voltage source; a circuit board with an electronic variable resistor inte-grated circuit including a preset resistance value and a measure point coupled to the electronic variable resis-tor integrated circuit allowing a micro-controller unit of a test fixture to set the predetermined resistance value in the electronic variable resistor integrated circuit, the electronic variable resistor integrated circuit coupled to the voltage source for outputting a bias voltage; and a power amplifier including a GaN transistor and a bias input coupled to the electronic variable resistor inte-grated circuit, wherein the preset resistance value is determined by a quiescent current of the GaN transistor measured by the micro-controller unit of the test fixture from the measure point prior to installation of the power amplifier in an electronic device.

A transceiver device comprising: 5 a circuit board including a first electronic adjustable resistor and a first voltage output; and a voltage source coupled to the first electronic adjustable resistor to output a first predetermined bias voltage at the first voltage output; and 10 a first GaN power amplifier including a GaN transistor and a bias voltage input to adjust for a quiescent current of the GaN transistor, the bias voltage input coupled to the first electronic adjustable resistor, wherein the first electronic adjustable resistor is set at a first predeter-mined resistance value to produce the first predeter-mined bias voltage, the first predetermined bias voltage value determined by measuring the quiescent current of the GaN transistor of the first GaN power amplifier during production of the transceiver device.

A method of setting an adjustable resistor for adjusting quiescent current in a GaN transistor of a power amplifier on a production component, the method comprising: measuring a quiescent current on the GaN power ampli-fier via a micro-controller unit coupled to a current sensor on a test fixture including a measure point coupled to an electronic adjustable resistor; determining a resistance value for outputting of a bias voltage value to adjust for the quiescent current of the GaN transistor via the micro-controller unit; storing the resistance value in the electronic adjustable resistor via the micro-controller unit; and coupling the electronic adjustable resistor to an output voltage circuit to provide voltage at the bias voltage value to a voltage bias input of the power amplifier.