Patent
US 11,235,977Flame Synthesis of Monolayer and Nano-Defective Graphene
Stephen D. Tse, Hua Hong, Bernard H. Kear
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,235,977Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a graphene structure by reacting an oxidizer and a fuel in a modified multiple, inverse-diffusion flame burner, wherein said modified multiple, inverse-diffusion flame burner comprises delivery tubes for the fuel extending beyond a main burner surface, wherein said graphene structure is monolayer graphene, wherein said method comprises: a) reducing a metal substrate in said modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel; b) adding a hydrocarbon precursor through the fuel lines extending beyond the main burner surface of the modified, multiple inverse-diffusion flame burner to synthesize the graphene on said substrate; and c) annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel and wherein the temperature of the substrate downstream of the modified, multiple inverse-diffusion flame burner is greater than about 850 C. Currently amended
The method of claim 1, wherein said graphene structure is selected from the group consisting of flakes, films, sheets, plates, and discs. Original
The method of claim 1, where the modified, multiple, inverse-diffusion-flame burner comprises an array of stabilized flames that form a uniform flat-flame front. Original
The method of claim 1, wherein the oxidizer is air, 0 2, or an oxidizing agent. Original
The method of claim 1, wherein the graphene structure is synthesized on a metal substrate. Original
The method of claim 1, where the fuel contains at least one additive, thereby forming doped graphene structures. Original
The method of claim 1, further comprising assaying the graphene structure by Raman spectra. Original
The method of claim 1, further comprising transferring the graphene structure to a substrate after synthesis. Original
The method of claim 1, further comprising doping the graphene structure with ions. Original
The method of claim 1, wherein the substrate temperature downstream of the modified, multiple inverse- diffusion flame burner in step c) is about 950 ° C to about 1050 C. New
Canceled
Canceled
Canceled
A method for synthesizing a nano-defective graphene structure by reacting an oxidizer and a fuel in a modified multiple, inverse-diffusion flame burner, wherein said modified multiple, inverse-diffusion flame burner comprises delivery tubes for the fuel extending beyond a main burner surface, wherein said method comprises: a) reducing a metal substrate in said modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel; b) adding a hydrocarbon precursor through the fuel lines extending beyond the main burner surface of the modified, multiple inverse-diffusion flame burner to synthesize the graphene on said substrate; and, optionally, c) annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel, wherein the flame-synthesized graphene of step b) has an I D/I G rati o o f ab o ut 0.6 o r higher prior to step c). Currently amended
The method of claim 17, wherein said method comprises annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel. Original
The method of claim 17, wherein said metal substrate is less than 99.9% pure. Original
The method of claim 17, wherein said graphene structure is selected from the group consisting of flakes, films, sheets, plates, and discs. New
The method of claim 17, where the modified, multiple, inverse-diffusion-flame burner comprises an array of stabilized flames that form radially uniform temperature and species distribution downstream. New
The method of claim 17, wherein the oxidizer is air, 0 2, or an oxidizing agent. New
The method of claim 17, wherein said graphene structure is a monolayer. New
The method of claim 17, wherein the metal substrate is copper. New
The method of claim 17, where the fuel contains at least one additive, thereby forming doped graphene structures. New
The method of claim 17, further comprising assaying the graphene structure by Raman spectra. New
The method of claim 17, further comprising doping the graphene structure with ions. New
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Copper foil/substrate placed downstream of the modified multiple inverse-diffusion flame burner. Burner initially run with H₂ as sole fuel for ~10 min to reduce native oxide layer. Hydrocarbon gas added through elevated precursor-delivery lines for ~10 min to synthesize graphene. Hydrocarbon gas then removed; substrate kept in H₂ flame for ~10 min for annealing. Raman spectra confirmed monolayer graphene.
4 materials1 process step
Copper foil/substrate placed downstream of the modified multiple inverse-diffusion flame burner. Burner initially run with H₂ as sole fuel for ~10 min. Methane added through elevated precursor-delivery lines for ~5 min. Methane removed; foil kept in H₂ flame for 0–10 min additional annealing. Raman spectra confirmed nano-defective graphene. Samples with ID/IG ratio ≥ 0.6 show dramatic increase in defects after annealing.
Materials described outside the worked examples.
nitrogen species or boron species dopant additive
methane
CH₄
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ID/IG ratio threshold for nano-defective graphene susceptibility to H2 annealing | 0.6 dimensionless | C |
substrate temperature downstream during annealing for monolayer graphene synthesis (claim range) |
Patent
Atlas literature
Patent
US 11,235,977Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a graphene structure by reacting an oxidizer and a fuel in a modified multiple, inverse-diffusion flame burner, wherein said modified multiple, inverse-diffusion flame burner comprises delivery tubes for the fuel extending beyond a main burner surface, wherein said graphene structure is monolayer graphene, wherein said method comprises: a) reducing a metal substrate in said modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel; b) adding a hydrocarbon precursor through the fuel lines extending beyond the main burner surface of the modified, multiple inverse-diffusion flame burner to synthesize the graphene on said substrate; and c) annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel and wherein the temperature of the substrate downstream of the modified, multiple inverse-diffusion flame burner is greater than about 850 C. Currently amended
The method of claim 1, wherein said graphene structure is selected from the group consisting of flakes, films, sheets, plates, and discs. Original
The method of claim 1, where the modified, multiple, inverse-diffusion-flame burner comprises an array of stabilized flames that form a uniform flat-flame front. Original
The method of claim 1, wherein the oxidizer is air, 0 2, or an oxidizing agent. Original
The method of claim 1, wherein the graphene structure is synthesized on a metal substrate. Original
The method of claim 1, where the fuel contains at least one additive, thereby forming doped graphene structures. Original
The method of claim 1, further comprising assaying the graphene structure by Raman spectra. Original
The method of claim 1, further comprising transferring the graphene structure to a substrate after synthesis. Original
The method of claim 1, further comprising doping the graphene structure with ions. Original
The method of claim 1, wherein the substrate temperature downstream of the modified, multiple inverse- diffusion flame burner in step c) is about 950 ° C to about 1050 C. New
Canceled
Canceled
Canceled
A method for synthesizing a nano-defective graphene structure by reacting an oxidizer and a fuel in a modified multiple, inverse-diffusion flame burner, wherein said modified multiple, inverse-diffusion flame burner comprises delivery tubes for the fuel extending beyond a main burner surface, wherein said method comprises: a) reducing a metal substrate in said modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel; b) adding a hydrocarbon precursor through the fuel lines extending beyond the main burner surface of the modified, multiple inverse-diffusion flame burner to synthesize the graphene on said substrate; and, optionally, c) annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel, wherein the flame-synthesized graphene of step b) has an I D/I G rati o o f ab o ut 0.6 o r higher prior to step c). Currently amended
The method of claim 17, wherein said method comprises annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel. Original
The method of claim 17, wherein said metal substrate is less than 99.9% pure. Original
The method of claim 17, wherein said graphene structure is selected from the group consisting of flakes, films, sheets, plates, and discs. New
The method of claim 17, where the modified, multiple, inverse-diffusion-flame burner comprises an array of stabilized flames that form radially uniform temperature and species distribution downstream. New
The method of claim 17, wherein the oxidizer is air, 0 2, or an oxidizing agent. New
The method of claim 17, wherein said graphene structure is a monolayer. New
The method of claim 17, wherein the metal substrate is copper. New
The method of claim 17, where the fuel contains at least one additive, thereby forming doped graphene structures. New
The method of claim 17, further comprising assaying the graphene structure by Raman spectra. New
The method of claim 17, further comprising doping the graphene structure with ions. New
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Copper foil/substrate placed downstream of the modified multiple inverse-diffusion flame burner. Burner initially run with H₂ as sole fuel for ~10 min to reduce native oxide layer. Hydrocarbon gas added through elevated precursor-delivery lines for ~10 min to synthesize graphene. Hydrocarbon gas then removed; substrate kept in H₂ flame for ~10 min for annealing. Raman spectra confirmed monolayer graphene.
4 materials1 process step
Copper foil/substrate placed downstream of the modified multiple inverse-diffusion flame burner. Burner initially run with H₂ as sole fuel for ~10 min. Methane added through elevated precursor-delivery lines for ~5 min. Methane removed; foil kept in H₂ flame for 0–10 min additional annealing. Raman spectra confirmed nano-defective graphene. Samples with ID/IG ratio ≥ 0.6 show dramatic increase in defects after annealing.
Materials described outside the worked examples.
nitrogen species or boron species dopant additive
methane
CH₄
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ID/IG ratio threshold for nano-defective graphene susceptibility to H2 annealing | 0.6 dimensionless | C |
substrate temperature downstream during annealing for monolayer graphene synthesis (claim range) |
Patent
Atlas literature
Patent
US 11,235,977Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a graphene structure by reacting an oxidizer and a fuel in a modified multiple, inverse-diffusion flame burner, wherein said modified multiple, inverse-diffusion flame burner comprises delivery tubes for the fuel extending beyond a main burner surface, wherein said graphene structure is monolayer graphene, wherein said method comprises: a) reducing a metal substrate in said modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel; b) adding a hydrocarbon precursor through the fuel lines extending beyond the main burner surface of the modified, multiple inverse-diffusion flame burner to synthesize the graphene on said substrate; and c) annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel and wherein the temperature of the substrate downstream of the modified, multiple inverse-diffusion flame burner is greater than about 850 C. Currently amended
The method of claim 1, wherein said graphene structure is selected from the group consisting of flakes, films, sheets, plates, and discs. Original
The method of claim 1, where the modified, multiple, inverse-diffusion-flame burner comprises an array of stabilized flames that form a uniform flat-flame front. Original
The method of claim 1, wherein the oxidizer is air, 0 2, or an oxidizing agent. Original
The method of claim 1, wherein the graphene structure is synthesized on a metal substrate. Original
The method of claim 1, where the fuel contains at least one additive, thereby forming doped graphene structures. Original
The method of claim 1, further comprising assaying the graphene structure by Raman spectra. Original
The method of claim 1, further comprising transferring the graphene structure to a substrate after synthesis. Original
The method of claim 1, further comprising doping the graphene structure with ions. Original
The method of claim 1, wherein the substrate temperature downstream of the modified, multiple inverse- diffusion flame burner in step c) is about 950 ° C to about 1050 C. New
Canceled
Canceled
Canceled
A method for synthesizing a nano-defective graphene structure by reacting an oxidizer and a fuel in a modified multiple, inverse-diffusion flame burner, wherein said modified multiple, inverse-diffusion flame burner comprises delivery tubes for the fuel extending beyond a main burner surface, wherein said method comprises: a) reducing a metal substrate in said modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel; b) adding a hydrocarbon precursor through the fuel lines extending beyond the main burner surface of the modified, multiple inverse-diffusion flame burner to synthesize the graphene on said substrate; and, optionally, c) annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel, wherein the flame-synthesized graphene of step b) has an I D/I G rati o o f ab o ut 0.6 o r higher prior to step c). Currently amended
The method of claim 17, wherein said method comprises annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel. Original
The method of claim 17, wherein said metal substrate is less than 99.9% pure. Original
The method of claim 17, wherein said graphene structure is selected from the group consisting of flakes, films, sheets, plates, and discs. New
The method of claim 17, where the modified, multiple, inverse-diffusion-flame burner comprises an array of stabilized flames that form radially uniform temperature and species distribution downstream. New
The method of claim 17, wherein the oxidizer is air, 0 2, or an oxidizing agent. New
The method of claim 17, wherein said graphene structure is a monolayer. New
The method of claim 17, wherein the metal substrate is copper. New
The method of claim 17, where the fuel contains at least one additive, thereby forming doped graphene structures. New
The method of claim 17, further comprising assaying the graphene structure by Raman spectra. New
The method of claim 17, further comprising doping the graphene structure with ions. New
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Copper foil/substrate placed downstream of the modified multiple inverse-diffusion flame burner. Burner initially run with H₂ as sole fuel for ~10 min to reduce native oxide layer. Hydrocarbon gas added through elevated precursor-delivery lines for ~10 min to synthesize graphene. Hydrocarbon gas then removed; substrate kept in H₂ flame for ~10 min for annealing. Raman spectra confirmed monolayer graphene.
4 materials1 process step
Copper foil/substrate placed downstream of the modified multiple inverse-diffusion flame burner. Burner initially run with H₂ as sole fuel for ~10 min. Methane added through elevated precursor-delivery lines for ~5 min. Methane removed; foil kept in H₂ flame for 0–10 min additional annealing. Raman spectra confirmed nano-defective graphene. Samples with ID/IG ratio ≥ 0.6 show dramatic increase in defects after annealing.
Materials described outside the worked examples.
nitrogen species or boron species dopant additive
methane
CH₄
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ID/IG ratio threshold for nano-defective graphene susceptibility to H2 annealing | 0.6 dimensionless | C |
substrate temperature downstream during annealing for monolayer graphene synthesis (claim range) |
Patent
Atlas literature
Patent
US 11,235,977Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for synthesizing a graphene structure by reacting an oxidizer and a fuel in a modified multiple, inverse-diffusion flame burner, wherein said modified multiple, inverse-diffusion flame burner comprises delivery tubes for the fuel extending beyond a main burner surface, wherein said graphene structure is monolayer graphene, wherein said method comprises: a) reducing a metal substrate in said modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel; b) adding a hydrocarbon precursor through the fuel lines extending beyond the main burner surface of the modified, multiple inverse-diffusion flame burner to synthesize the graphene on said substrate; and c) annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel and wherein the temperature of the substrate downstream of the modified, multiple inverse-diffusion flame burner is greater than about 850 C. Currently amended
The method of claim 1, wherein said graphene structure is selected from the group consisting of flakes, films, sheets, plates, and discs. Original
The method of claim 1, where the modified, multiple, inverse-diffusion-flame burner comprises an array of stabilized flames that form a uniform flat-flame front. Original
The method of claim 1, wherein the oxidizer is air, 0 2, or an oxidizing agent. Original
The method of claim 1, wherein the graphene structure is synthesized on a metal substrate. Original
The method of claim 1, where the fuel contains at least one additive, thereby forming doped graphene structures. Original
The method of claim 1, further comprising assaying the graphene structure by Raman spectra. Original
The method of claim 1, further comprising transferring the graphene structure to a substrate after synthesis. Original
The method of claim 1, further comprising doping the graphene structure with ions. Original
The method of claim 1, wherein the substrate temperature downstream of the modified, multiple inverse- diffusion flame burner in step c) is about 950 ° C to about 1050 C. New
Canceled
Canceled
Canceled
A method for synthesizing a nano-defective graphene structure by reacting an oxidizer and a fuel in a modified multiple, inverse-diffusion flame burner, wherein said modified multiple, inverse-diffusion flame burner comprises delivery tubes for the fuel extending beyond a main burner surface, wherein said method comprises: a) reducing a metal substrate in said modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel; b) adding a hydrocarbon precursor through the fuel lines extending beyond the main burner surface of the modified, multiple inverse-diffusion flame burner to synthesize the graphene on said substrate; and, optionally, c) annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel, wherein the flame-synthesized graphene of step b) has an I D/I G rati o o f ab o ut 0.6 o r higher prior to step c). Currently amended
The method of claim 17, wherein said method comprises annealing the flame-synthesized graphene of step b) by running the modified, multiple inverse-diffusion flame burner wherein hydrogen (H 2) is the only fuel. Original
The method of claim 17, wherein said metal substrate is less than 99.9% pure. Original
The method of claim 17, wherein said graphene structure is selected from the group consisting of flakes, films, sheets, plates, and discs. New
The method of claim 17, where the modified, multiple, inverse-diffusion-flame burner comprises an array of stabilized flames that form radially uniform temperature and species distribution downstream. New
The method of claim 17, wherein the oxidizer is air, 0 2, or an oxidizing agent. New
The method of claim 17, wherein said graphene structure is a monolayer. New
The method of claim 17, wherein the metal substrate is copper. New
The method of claim 17, where the fuel contains at least one additive, thereby forming doped graphene structures. New
The method of claim 17, further comprising assaying the graphene structure by Raman spectra. New
The method of claim 17, further comprising doping the graphene structure with ions. New
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Copper foil/substrate placed downstream of the modified multiple inverse-diffusion flame burner. Burner initially run with H₂ as sole fuel for ~10 min to reduce native oxide layer. Hydrocarbon gas added through elevated precursor-delivery lines for ~10 min to synthesize graphene. Hydrocarbon gas then removed; substrate kept in H₂ flame for ~10 min for annealing. Raman spectra confirmed monolayer graphene.
4 materials1 process step
Copper foil/substrate placed downstream of the modified multiple inverse-diffusion flame burner. Burner initially run with H₂ as sole fuel for ~10 min. Methane added through elevated precursor-delivery lines for ~5 min. Methane removed; foil kept in H₂ flame for 0–10 min additional annealing. Raman spectra confirmed nano-defective graphene. Samples with ID/IG ratio ≥ 0.6 show dramatic increase in defects after annealing.
Materials described outside the worked examples.
nitrogen species or boron species dopant additive
methane
CH₄
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
ID/IG ratio threshold for nano-defective graphene susceptibility to H2 annealing | 0.6 dimensionless | C |
substrate temperature downstream during annealing for monolayer graphene synthesis (claim range) |
| 950–1050 °C |
C |
substrate temperature downstream during annealing (preferred) | 1000 °C | C |
few-layer graphene on Ni growth temperature (reference figure description) | 1000 °C | C |
Temperature | 500–750 °C | — |
Duration | 30–300 s | — |
Thickness | 190–1100 nm | — |
Thickness | 800–1000 nm | — |
Temperature | 800–1000 °C | — |
Temperature | 700–850 °C | — |
Duration | 30–1800 s | — |
Duration | 5–20 minutes | — |
Duration | 3–8 hours | — |
Duration | 12–15 minutes | — |
Thickness | 8–12 mm | — |
— | ≤ 1 eV | — |
| 950–1050 °C |
C |
substrate temperature downstream during annealing (preferred) | 1000 °C | C |
few-layer graphene on Ni growth temperature (reference figure description) | 1000 °C | C |
Temperature | 500–750 °C | — |
Duration | 30–300 s | — |
Thickness | 190–1100 nm | — |
Thickness | 800–1000 nm | — |
Temperature | 800–1000 °C | — |
Temperature | 700–850 °C | — |
Duration | 30–1800 s | — |
Duration | 5–20 minutes | — |
Duration | 3–8 hours | — |
Duration | 12–15 minutes | — |
Thickness | 8–12 mm | — |
— | ≤ 1 eV | — |
| 950–1050 °C |
C |
substrate temperature downstream during annealing (preferred) | 1000 °C | C |
few-layer graphene on Ni growth temperature (reference figure description) | 1000 °C | C |
Temperature | 500–750 °C | — |
Duration | 30–300 s | — |
Thickness | 190–1100 nm | — |
Thickness | 800–1000 nm | — |
Temperature | 800–1000 °C | — |
Temperature | 700–850 °C | — |
Duration | 30–1800 s | — |
Duration | 5–20 minutes | — |
Duration | 3–8 hours | — |
Duration | 12–15 minutes | — |
Thickness | 8–12 mm | — |
— | ≤ 1 eV | — |
| 950–1050 °C |
C |
substrate temperature downstream during annealing (preferred) | 1000 °C | C |
few-layer graphene on Ni growth temperature (reference figure description) | 1000 °C | C |
Temperature | 500–750 °C | — |
Duration | 30–300 s | — |
Thickness | 190–1100 nm | — |
Thickness | 800–1000 nm | — |
Temperature | 800–1000 °C | — |
Temperature | 700–850 °C | — |
Duration | 30–1800 s | — |
Duration | 5–20 minutes | — |
Duration | 3–8 hours | — |
Duration | 12–15 minutes | — |
Thickness | 8–12 mm | — |
— | ≤ 1 eV | — |