Patent
US 9,327,982Formation of Graphene on a surface
Francis J. Kub, Travis Anderson, Boris Feigelson
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts aspects of an exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [016]
FIG. 2 depicts aspects of another exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [017]
FIG. 3 depicts aspects of another exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [018]
FIG. 4 depicts aspects of an exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [019]
FIG. 5 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [020]
FIG. 6 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [021]
FIG. 7 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [022]
FIG. 8 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [023]
FIG. 9 depicts aspects of an exemplary embodiment of a third method for forming graphene on a surface in accordance with the present invention. [024]
FIG. 10 depicts aspects of an exemplary embodiment of a fourth method for forming graphene on a surface in accordance with the present invention. [025]
FIG. 11 depicts aspects of another exemplary embodiment of a fourth method for forming graphene on a surface in accordance with the present invention. Page 7 …
FIG. 12 depicts aspects of an exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present invention. …
FIG. 13 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIG. 14 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIG. 15 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIGS. 16A and 16B depict aspects of exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material for a …
FIGS. 17A and 17B depict aspects of other exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.7.853.1271.1372.1315.svg 0.147 1.73 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.7.1876.1270.1901.1304.svg 0.113 0.083 Chemistry Black and white YQrical SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.8.302.1357.1783.1402.svg 0.15 4.937 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.8.451.1468.845.1513.svg 0.15 1.313 Chemistry Black and white su strati c qe:& SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.452.1579.2247.1624.svg 0.15 5.983 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.303.1669.489.1708.svg 0.13 0.62 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.451.1778.2248.1822.svg 0.147 5.99 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.305.1863.2245.1908.svg 0.15 6.467 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.303.1949.2246.1994.svg 0.15 6.477 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.10.300.2036.788.2078.svg 0.14 1.627 Chemistry Black and white 4: '. y. X t3_:Od'hf'C₂O__ v SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.11.452.2148.2247.2192.svg 0.147 5.983 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.11.301.2234.1708.2267.svg 0.11 4.69 Chemistry Black and white 9Ra' li SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.11.1949.2234.2248.2278.svg 0.147 0.997 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.300.2320.2248.2364.svg 0.147 6.493 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.303.2406.741.2450.svg 0.147 1.46 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.451.2517.2245.2562.svg 0.15 5.98 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.303.2603.2249.2648.svg 0.15 6.487 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.303.2689.2248.2734.svg 0.15 6.483 Chemistry Black and white h;1toin:c cPagei3 of 10 SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.13.301.2863.1132.2907.svg 0.147 2.77 Chemistry Black and white Page 3 of 10 U.S. Application No. 13/785,08 1 Response to Final Office Action SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.453.543.2134.587.svg 0.147 5.603 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.452.654.2173.698.svg 0.147 5.737 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.451.765.1656.807.svg 0.14 4.017 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.451.875.2249.920.svg 0.15 5.993 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.302.962.823.1007.svg 0.15 1.737 Chemistry Black and white t4 Gtr.we +AM'~ C -r s-'W'-teeavtmm- 4A SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.1912.963.1969.996.svg 0.11 0.19 Chemistry Black and white least one side of the metal material layer; wherem.- the GM₂ that is not removed SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.5.1240.1170.1678.1204.svg 0.113 1.46 Chemistry Black and white a vertical graphene material structure.
The method according to claim 15, wherein the substrate is selected from the group consisting of silicon, sapphire, silicon-on-insulator, quartz, gallium arsenide, gallium nitride, indium phosphide, and cadmium telluride.
The method according to claim 15, wherein the metal material is selected based on one of a solubility limit of carbon in the metal material and a diffusion characteristic of carbon in the metal material.
The method according to claim 15, wherein the metal material comprises one of copper, nickel, ruthenium, cobalt, iron, and zinc.
The method according to claim 15, wherein the metal material layer is a nanoparticle metal material layer. Page 4 of 10 U.S. Application No. 13/785,08 1 Response to Final Office Action
The method according to claim 15, wherein the heating/cooling cycle is a rapid thermal anneal.
The method according to claim 15, wherein fo rm ing the substrate further comprises depositing a material layer on a top surface of the substrate to provide the substrate surface, before deposition of the metal material.
Layer stacks claimed or described, ordered top of device to substrate.
vertical graphene material structure
Materials described outside the worked examples.
graphene material
carbon-containing material
metal material
silicon
Si
sapphire
Al₂O₃
silicon-on-insulator
quartz
SiO₂
gallium arsenide
GaAs
gallium nitride
GaN
indium phosphide
InP
cadmium telluride
CdTe
copper
Cu
nickel
Ni
ruthenium
Ru
cobalt
Co
iron
Fe
zinc
Zn
boron nitride
BN
silicon nitride
Si₃N₄
hafnium oxide
HfO₂
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
aluminum gallium arsenide
AlGaAs
indium gallium arsenide
InGaAs
organic light emitting diode material
thin film of photovoltaic material
barrier metal
titanium nitride
TiN
graphene
carbon-containing vapor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 16A and 16B depict aspects of exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material for a …
FIGS. 17A and 17B depict aspects of other exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–1.8 nm | — |
Thickness | 0.3–20000000 nm | — |
Related documents with shared materials, methods, properties, or citations.
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METHOD FOR PHOTODEPOSITING A PARTICLE ON A GRAPHENE-SEMICONDUCTOR HYBRID PANEL AND A SEMICONDUCTOR STRUCTURE
GRAPHENE NANOELECTRONIC DEVICE FABRICATION
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts aspects of an exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [016]
FIG. 2 depicts aspects of another exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [017]
FIG. 3 depicts aspects of another exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [018]
FIG. 4 depicts aspects of an exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [019]
FIG. 5 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [020]
FIG. 6 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [021]
FIG. 7 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [022]
FIG. 8 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [023]
FIG. 9 depicts aspects of an exemplary embodiment of a third method for forming graphene on a surface in accordance with the present invention. [024]
FIG. 10 depicts aspects of an exemplary embodiment of a fourth method for forming graphene on a surface in accordance with the present invention. [025]
FIG. 11 depicts aspects of another exemplary embodiment of a fourth method for forming graphene on a surface in accordance with the present invention. Page 7 …
FIG. 12 depicts aspects of an exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present invention. …
FIG. 13 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIG. 14 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIG. 15 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIGS. 16A and 16B depict aspects of exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material for a …
FIGS. 17A and 17B depict aspects of other exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-14.. canceled
SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.7.853.1271.1372.1315.svg 0.147 1.73 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.7.1876.1270.1901.1304.svg 0.113 0.083 Chemistry Black and white YQrical SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.8.302.1357.1783.1402.svg 0.15 4.937 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.8.451.1468.845.1513.svg 0.15 1.313 Chemistry Black and white su strati c qe:& SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.452.1579.2247.1624.svg 0.15 5.983 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.303.1669.489.1708.svg 0.13 0.62 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.451.1778.2248.1822.svg 0.147 5.99 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.305.1863.2245.1908.svg 0.15 6.467 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.303.1949.2246.1994.svg 0.15 6.477 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.10.300.2036.788.2078.svg 0.14 1.627 Chemistry Black and white 4: '. y. X t3_:Od'hf'C₂O__ v SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.11.452.2148.2247.2192.svg 0.147 5.983 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.11.301.2234.1708.2267.svg 0.11 4.69 Chemistry Black and white 9Ra' li SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.11.1949.2234.2248.2278.svg 0.147 0.997 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.300.2320.2248.2364.svg 0.147 6.493 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.303.2406.741.2450.svg 0.147 1.46 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.451.2517.2245.2562.svg 0.15 5.98 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.303.2603.2249.2648.svg 0.15 6.487 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.303.2689.2248.2734.svg 0.15 6.483 Chemistry Black and white h;1toin:c cPagei3 of 10 SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.13.301.2863.1132.2907.svg 0.147 2.77 Chemistry Black and white Page 3 of 10 U.S. Application No. 13/785,08 1 Response to Final Office Action SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.453.543.2134.587.svg 0.147 5.603 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.452.654.2173.698.svg 0.147 5.737 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.451.765.1656.807.svg 0.14 4.017 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.451.875.2249.920.svg 0.15 5.993 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.302.962.823.1007.svg 0.15 1.737 Chemistry Black and white t4 Gtr.we +AM'~ C -r s-'W'-teeavtmm- 4A SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.1912.963.1969.996.svg 0.11 0.19 Chemistry Black and white least one side of the metal material layer; wherem.- the GM₂ that is not removed SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.5.1240.1170.1678.1204.svg 0.113 1.46 Chemistry Black and white a vertical graphene material structure.
The method according to claim 15, wherein the substrate is selected from the group consisting of silicon, sapphire, silicon-on-insulator, quartz, gallium arsenide, gallium nitride, indium phosphide, and cadmium telluride.
The method according to claim 15, wherein the metal material is selected based on one of a solubility limit of carbon in the metal material and a diffusion characteristic of carbon in the metal material.
The method according to claim 15, wherein the metal material comprises one of copper, nickel, ruthenium, cobalt, iron, and zinc.
The method according to claim 15, wherein the metal material layer is a nanoparticle metal material layer. Page 4 of 10 U.S. Application No. 13/785,08 1 Response to Final Office Action
The method according to claim 15, wherein the heating/cooling cycle is a rapid thermal anneal.
The method according to claim 15, wherein fo rm ing the substrate further comprises depositing a material layer on a top surface of the substrate to provide the substrate surface, before deposition of the metal material.
Layer stacks claimed or described, ordered top of device to substrate.
vertical graphene material structure
Materials described outside the worked examples.
graphene material
carbon-containing material
metal material
silicon
Si
sapphire
Al₂O₃
silicon-on-insulator
quartz
SiO₂
gallium arsenide
GaAs
gallium nitride
GaN
indium phosphide
InP
cadmium telluride
CdTe
copper
Cu
nickel
Ni
ruthenium
Ru
cobalt
Co
iron
Fe
zinc
Zn
boron nitride
BN
silicon nitride
Si₃N₄
hafnium oxide
HfO₂
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
aluminum gallium arsenide
AlGaAs
indium gallium arsenide
InGaAs
organic light emitting diode material
thin film of photovoltaic material
barrier metal
titanium nitride
TiN
graphene
carbon-containing vapor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 16A and 16B depict aspects of exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material for a …
FIGS. 17A and 17B depict aspects of other exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–1.8 nm | — |
Thickness | 0.3–20000000 nm | — |
Related documents with shared materials, methods, properties, or citations.
OPTICAL MODULATOR, IMAGING DEVICE AND DISPLAY APPARATUS INCLUDING A DIELECTRIC LAYER AND AN ELECTRODE COMPRISING GRAPHENE
METHOD FOR PHOTODEPOSITING A PARTICLE ON A GRAPHENE-SEMICONDUCTOR HYBRID PANEL AND A SEMICONDUCTOR STRUCTURE
GRAPHENE NANOELECTRONIC DEVICE FABRICATION
METHOD FOR MANUFACTURING GRAPHENE AND GRAPHENE MANUFACTURED BY THE SAME
GRAPHENE PATTERNING METHOD AND PATTERNING MEMBER
GAN POWER DEVICE WITH SOLDERABLE BACK METAL
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts aspects of an exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [016]
FIG. 2 depicts aspects of another exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [017]
FIG. 3 depicts aspects of another exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [018]
FIG. 4 depicts aspects of an exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [019]
FIG. 5 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [020]
FIG. 6 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [021]
FIG. 7 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [022]
FIG. 8 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [023]
FIG. 9 depicts aspects of an exemplary embodiment of a third method for forming graphene on a surface in accordance with the present invention. [024]
FIG. 10 depicts aspects of an exemplary embodiment of a fourth method for forming graphene on a surface in accordance with the present invention. [025]
FIG. 11 depicts aspects of another exemplary embodiment of a fourth method for forming graphene on a surface in accordance with the present invention. Page 7 …
FIG. 12 depicts aspects of an exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present invention. …
FIG. 13 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIG. 14 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIG. 15 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIGS. 16A and 16B depict aspects of exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material for a …
FIGS. 17A and 17B depict aspects of other exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-14.. canceled
SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.7.853.1271.1372.1315.svg 0.147 1.73 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.7.1876.1270.1901.1304.svg 0.113 0.083 Chemistry Black and white YQrical SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.8.302.1357.1783.1402.svg 0.15 4.937 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.8.451.1468.845.1513.svg 0.15 1.313 Chemistry Black and white su strati c qe:& SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.452.1579.2247.1624.svg 0.15 5.983 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.303.1669.489.1708.svg 0.13 0.62 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.451.1778.2248.1822.svg 0.147 5.99 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.305.1863.2245.1908.svg 0.15 6.467 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.9.303.1949.2246.1994.svg 0.15 6.477 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.10.300.2036.788.2078.svg 0.14 1.627 Chemistry Black and white 4: '. y. X t3_:Od'hf'C₂O__ v SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.11.452.2148.2247.2192.svg 0.147 5.983 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.11.301.2234.1708.2267.svg 0.11 4.69 Chemistry Black and white 9Ra' li SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.11.1949.2234.2248.2278.svg 0.147 0.997 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.300.2320.2248.2364.svg 0.147 6.493 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.303.2406.741.2450.svg 0.147 1.46 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.451.2517.2245.2562.svg 0.15 5.98 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.303.2603.2249.2648.svg 0.15 6.487 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.12.303.2689.2248.2734.svg 0.15 6.483 Chemistry Black and white h;1toin:c cPagei3 of 10 SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.1.13.301.2863.1132.2907.svg 0.147 2.77 Chemistry Black and white Page 3 of 10 U.S. Application No. 13/785,08 1 Response to Final Office Action SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.453.543.2134.587.svg 0.147 5.603 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.452.654.2173.698.svg 0.147 5.737 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.451.765.1656.807.svg 0.14 4.017 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.451.875.2249.920.svg 0.15 5.993 Chemistry Black and white SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.302.962.823.1007.svg 0.15 1.737 Chemistry Black and white t4 Gtr.we +AM'~ C -r s-'W'-teeavtmm- 4A SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.3.1912.963.1969.996.svg 0.11 0.19 Chemistry Black and white least one side of the metal material layer; wherem.- the GM₂ that is not removed SVG 13785081.01-28-2016.IJYGIYEOPXXIFW3.CLM.2.5.1240.1170.1678.1204.svg 0.113 1.46 Chemistry Black and white a vertical graphene material structure.
The method according to claim 15, wherein the substrate is selected from the group consisting of silicon, sapphire, silicon-on-insulator, quartz, gallium arsenide, gallium nitride, indium phosphide, and cadmium telluride.
The method according to claim 15, wherein the metal material is selected based on one of a solubility limit of carbon in the metal material and a diffusion characteristic of carbon in the metal material.
The method according to claim 15, wherein the metal material comprises one of copper, nickel, ruthenium, cobalt, iron, and zinc.
The method according to claim 15, wherein the metal material layer is a nanoparticle metal material layer. Page 4 of 10 U.S. Application No. 13/785,08 1 Response to Final Office Action
The method according to claim 15, wherein the heating/cooling cycle is a rapid thermal anneal.
The method according to claim 15, wherein fo rm ing the substrate further comprises depositing a material layer on a top surface of the substrate to provide the substrate surface, before deposition of the metal material.
Layer stacks claimed or described, ordered top of device to substrate.
vertical graphene material structure
Materials described outside the worked examples.
graphene material
carbon-containing material
metal material
silicon
Si
sapphire
Al₂O₃
silicon-on-insulator
quartz
SiO₂
gallium arsenide
GaAs
gallium nitride
GaN
indium phosphide
InP
cadmium telluride
CdTe
copper
Cu
nickel
Ni
ruthenium
Ru
cobalt
Co
iron
Fe
zinc
Zn
boron nitride
BN
silicon nitride
Si₃N₄
hafnium oxide
HfO₂
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
aluminum gallium arsenide
AlGaAs
indium gallium arsenide
InGaAs
organic light emitting diode material
thin film of photovoltaic material
barrier metal
titanium nitride
TiN
graphene
carbon-containing vapor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 16A and 16B depict aspects of exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material for a …
FIGS. 17A and 17B depict aspects of other exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–1.8 nm | — |
Thickness | 0.3–20000000 nm | — |
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OPTICAL MODULATOR, IMAGING DEVICE AND DISPLAY APPARATUS INCLUDING A DIELECTRIC LAYER AND AN ELECTRODE COMPRISING GRAPHENE
METHOD FOR PHOTODEPOSITING A PARTICLE ON A GRAPHENE-SEMICONDUCTOR HYBRID PANEL AND A SEMICONDUCTOR STRUCTURE
GRAPHENE NANOELECTRONIC DEVICE FABRICATION
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts aspects of an exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [016]
FIG. 2 depicts aspects of another exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [017]
FIG. 3 depicts aspects of another exemplary embodiment of a first method for forming graphene on a surface in accordance with the present invention. [018]
FIG. 4 depicts aspects of an exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [019]
FIG. 5 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [020]
FIG. 6 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [021]
FIG. 7 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [022]
FIG. 8 depicts aspects of another exemplary embodiment of a second method for forming graphene on a surface in accordance with the present invention. [023]
FIG. 9 depicts aspects of an exemplary embodiment of a third method for forming graphene on a surface in accordance with the present invention. [024]
FIG. 10 depicts aspects of an exemplary embodiment of a fourth method for forming graphene on a surface in accordance with the present invention. [025]
FIG. 11 depicts aspects of another exemplary embodiment of a fourth method for forming graphene on a surface in accordance with the present invention. Page 7 …
FIG. 12 depicts aspects of an exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present invention. …
FIG. 13 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIG. 14 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIG. 15 depicts aspects of another exemplary embodiment of a method for forming a vertical graphene material structure in accordance with the present …
FIGS. 16A and 16B depict aspects of exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material for a …
FIGS. 17A and 17B depict aspects of other exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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The method according to claim 15, wherein the substrate is selected from the group consisting of silicon, sapphire, silicon-on-insulator, quartz, gallium arsenide, gallium nitride, indium phosphide, and cadmium telluride.
The method according to claim 15, wherein the metal material is selected based on one of a solubility limit of carbon in the metal material and a diffusion characteristic of carbon in the metal material.
The method according to claim 15, wherein the metal material comprises one of copper, nickel, ruthenium, cobalt, iron, and zinc.
The method according to claim 15, wherein the metal material layer is a nanoparticle metal material layer. Page 4 of 10 U.S. Application No. 13/785,08 1 Response to Final Office Action
The method according to claim 15, wherein the heating/cooling cycle is a rapid thermal anneal.
The method according to claim 15, wherein fo rm ing the substrate further comprises depositing a material layer on a top surface of the substrate to provide the substrate surface, before deposition of the metal material.
Layer stacks claimed or described, ordered top of device to substrate.
vertical graphene material structure
Materials described outside the worked examples.
graphene material
carbon-containing material
metal material
silicon
Si
sapphire
Al₂O₃
silicon-on-insulator
quartz
SiO₂
gallium arsenide
GaAs
gallium nitride
GaN
indium phosphide
InP
cadmium telluride
CdTe
copper
Cu
nickel
Ni
ruthenium
Ru
cobalt
Co
iron
Fe
zinc
Zn
boron nitride
BN
silicon nitride
Si₃N₄
hafnium oxide
HfO₂
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
aluminum gallium arsenide
AlGaAs
indium gallium arsenide
InGaAs
organic light emitting diode material
thin film of photovoltaic material
barrier metal
titanium nitride
TiN
graphene
carbon-containing vapor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 16A and 16B depict aspects of exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material for a …
FIGS. 17A and 17B depict aspects of other exemplary embodiments of graphene material formed in accordance with the present invention used as a gate material …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.3–1.8 nm | — |
Thickness | 0.3–20000000 nm | — |
Related documents with shared materials, methods, properties, or citations.
OPTICAL MODULATOR, IMAGING DEVICE AND DISPLAY APPARATUS INCLUDING A DIELECTRIC LAYER AND AN ELECTRODE COMPRISING GRAPHENE
METHOD FOR PHOTODEPOSITING A PARTICLE ON A GRAPHENE-SEMICONDUCTOR HYBRID PANEL AND A SEMICONDUCTOR STRUCTURE
GRAPHENE NANOELECTRONIC DEVICE FABRICATION
METHOD FOR MANUFACTURING GRAPHENE AND GRAPHENE MANUFACTURED BY THE SAME
GRAPHENE PATTERNING METHOD AND PATTERNING MEMBER
GAN POWER DEVICE WITH SOLDERABLE BACK METAL