Patent
US 9,278,862Method for Manufacturing Graphene and Graphene Manufactured by the Same
Minseok CHOI, Taehyeong KIM, Jinsan MOON, Mynghee JUNG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,278,862Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating an example of a method for manufacturing graphene; [0016]
FIG. 2 is a sectional view illustrating an example of formation of a metal layer on a thermal-expansion compensation substrate; [0017]
FIG. 3 is a sectional view illustrating another example of formation of a metal layer on a thermal-expansion compensation substrate; and [0018]
FIG. 4 is a sectional view illustrating an example of formation of graphene on the metal layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein the thermal-expansion compensation substrate comprises a thermal expansion control substance, and wherein the thermal expansion control substance comprises at least one of silicon carbide (Si C), M 2 B 3 0 12, AX 2 0s and A 2 P 2 WOi 2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 1, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K.
The method according to claim 1, wherein preparing of the thermal- expansion compensation substrate comprises forming a thermal expansion control substance on a support substrate.
The method according to claim 1, wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr Application No.: 14/201,274 Docket No.: 0465-4293PUS₁ Reply to Office Action of Page 3 of 7
The method according to claim 1, wherein the thermal-expansion compensation substrate compensates a difference in thermal expansion between the metal layer and the graphene.
canceled
canceled
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate comprising a thermal expansion control substance on a support substrate; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein the thermal expansion control substance has a lower thermal expansion coefficient than the metal layer or a negative thermal expansion coefficient, and wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K.
The method according to claim 9, wherein the thermal expansion control substance comprises at least one of silicon carbide (SiC), graphite, graphene, carbon nanotube, diamond, M 2 B 3 0 12, AX 2 0s and A 2 P 2 WO i2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 9, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K.
The method according to claim 9, wherein the thermal expansion control substance directly contacts the metal layer.
canceled
canceled
The method according to claim 13, claim 9, wherein the support substrate comprises at least one of silicon (Si), silicon oxide (Si O 2), sapphire and quartz. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr Application No.: 14/201,274 Docket No.: 0465-4293PUS₁ Reply to Office Action of Page 4 of 7
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate comprising a support substrate and a thermal expansion control substance disposed on the support substrate, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K.
The method according to claim 16, wherein the thermal expansion control substance comprises at least one of silicon carbide (SiC), graphite, graphene, carbon nanotube, diamond, M 2 B 3 0 12, AX 2 0s and A 2 P 2 WO i2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 16, wherein the support substrate comprises at least one of silicon (Si), silicon oxide (Si O 2), sapphire and quartz.
The method according to claim 16, wherein the thermal- expansion compensation substrate is configured to compensate a phenomenon generated by difference in thermal expansion between the metal layer and the graphene. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
thermal-expansion compensation substrate with metal layer for graphene growth
Materials described outside the worked examples.
thermal expansion control substance
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal expansion coefficient | -8 ppm/K | graphene |
copper thermal expansion coefficient |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,278,862Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating an example of a method for manufacturing graphene; [0016]
FIG. 2 is a sectional view illustrating an example of formation of a metal layer on a thermal-expansion compensation substrate; [0017]
FIG. 3 is a sectional view illustrating another example of formation of a metal layer on a thermal-expansion compensation substrate; and [0018]
FIG. 4 is a sectional view illustrating an example of formation of graphene on the metal layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein the thermal-expansion compensation substrate comprises a thermal expansion control substance, and wherein the thermal expansion control substance comprises at least one of silicon carbide (Si C), M 2 B 3 0 12, AX 2 0s and A 2 P 2 WOi 2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 1, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K.
The method according to claim 1, wherein preparing of the thermal- expansion compensation substrate comprises forming a thermal expansion control substance on a support substrate.
The method according to claim 1, wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr Application No.: 14/201,274 Docket No.: 0465-4293PUS₁ Reply to Office Action of Page 3 of 7
The method according to claim 1, wherein the thermal-expansion compensation substrate compensates a difference in thermal expansion between the metal layer and the graphene.
canceled
canceled
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate comprising a thermal expansion control substance on a support substrate; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein the thermal expansion control substance has a lower thermal expansion coefficient than the metal layer or a negative thermal expansion coefficient, and wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K.
The method according to claim 9, wherein the thermal expansion control substance comprises at least one of silicon carbide (SiC), graphite, graphene, carbon nanotube, diamond, M 2 B 3 0 12, AX 2 0s and A 2 P 2 WO i2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 9, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K.
The method according to claim 9, wherein the thermal expansion control substance directly contacts the metal layer.
canceled
canceled
The method according to claim 13, claim 9, wherein the support substrate comprises at least one of silicon (Si), silicon oxide (Si O 2), sapphire and quartz. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr Application No.: 14/201,274 Docket No.: 0465-4293PUS₁ Reply to Office Action of Page 4 of 7
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate comprising a support substrate and a thermal expansion control substance disposed on the support substrate, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K.
The method according to claim 16, wherein the thermal expansion control substance comprises at least one of silicon carbide (SiC), graphite, graphene, carbon nanotube, diamond, M 2 B 3 0 12, AX 2 0s and A 2 P 2 WO i2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 16, wherein the support substrate comprises at least one of silicon (Si), silicon oxide (Si O 2), sapphire and quartz.
The method according to claim 16, wherein the thermal- expansion compensation substrate is configured to compensate a phenomenon generated by difference in thermal expansion between the metal layer and the graphene. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
thermal-expansion compensation substrate with metal layer for graphene growth
Materials described outside the worked examples.
thermal expansion control substance
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal expansion coefficient | -8 ppm/K | graphene |
copper thermal expansion coefficient |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,278,862Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating an example of a method for manufacturing graphene; [0016]
FIG. 2 is a sectional view illustrating an example of formation of a metal layer on a thermal-expansion compensation substrate; [0017]
FIG. 3 is a sectional view illustrating another example of formation of a metal layer on a thermal-expansion compensation substrate; and [0018]
FIG. 4 is a sectional view illustrating an example of formation of graphene on the metal layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein the thermal-expansion compensation substrate comprises a thermal expansion control substance, and wherein the thermal expansion control substance comprises at least one of silicon carbide (Si C), M 2 B 3 0 12, AX 2 0s and A 2 P 2 WOi 2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 1, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K.
The method according to claim 1, wherein preparing of the thermal- expansion compensation substrate comprises forming a thermal expansion control substance on a support substrate.
The method according to claim 1, wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr Application No.: 14/201,274 Docket No.: 0465-4293PUS₁ Reply to Office Action of Page 3 of 7
The method according to claim 1, wherein the thermal-expansion compensation substrate compensates a difference in thermal expansion between the metal layer and the graphene.
canceled
canceled
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate comprising a thermal expansion control substance on a support substrate; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein the thermal expansion control substance has a lower thermal expansion coefficient than the metal layer or a negative thermal expansion coefficient, and wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K.
The method according to claim 9, wherein the thermal expansion control substance comprises at least one of silicon carbide (SiC), graphite, graphene, carbon nanotube, diamond, M 2 B 3 0 12, AX 2 0s and A 2 P 2 WO i2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 9, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K.
The method according to claim 9, wherein the thermal expansion control substance directly contacts the metal layer.
canceled
canceled
The method according to claim 13, claim 9, wherein the support substrate comprises at least one of silicon (Si), silicon oxide (Si O 2), sapphire and quartz. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr Application No.: 14/201,274 Docket No.: 0465-4293PUS₁ Reply to Office Action of Page 4 of 7
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate comprising a support substrate and a thermal expansion control substance disposed on the support substrate, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K.
The method according to claim 16, wherein the thermal expansion control substance comprises at least one of silicon carbide (SiC), graphite, graphene, carbon nanotube, diamond, M 2 B 3 0 12, AX 2 0s and A 2 P 2 WO i2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 16, wherein the support substrate comprises at least one of silicon (Si), silicon oxide (Si O 2), sapphire and quartz.
The method according to claim 16, wherein the thermal- expansion compensation substrate is configured to compensate a phenomenon generated by difference in thermal expansion between the metal layer and the graphene. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
thermal-expansion compensation substrate with metal layer for graphene growth
Materials described outside the worked examples.
thermal expansion control substance
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal expansion coefficient | -8 ppm/K | graphene |
copper thermal expansion coefficient |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,278,862Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart illustrating an example of a method for manufacturing graphene; [0016]
FIG. 2 is a sectional view illustrating an example of formation of a metal layer on a thermal-expansion compensation substrate; [0017]
FIG. 3 is a sectional view illustrating another example of formation of a metal layer on a thermal-expansion compensation substrate; and [0018]
FIG. 4 is a sectional view illustrating an example of formation of graphene on the metal layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein the thermal-expansion compensation substrate comprises a thermal expansion control substance, and wherein the thermal expansion control substance comprises at least one of silicon carbide (Si C), M 2 B 3 0 12, AX 2 0s and A 2 P 2 WOi 2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 1, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K.
The method according to claim 1, wherein preparing of the thermal- expansion compensation substrate comprises forming a thermal expansion control substance on a support substrate.
The method according to claim 1, wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr Application No.: 14/201,274 Docket No.: 0465-4293PUS₁ Reply to Office Action of Page 3 of 7
The method according to claim 1, wherein the thermal-expansion compensation substrate compensates a difference in thermal expansion between the metal layer and the graphene.
canceled
canceled
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate comprising a thermal expansion control substance on a support substrate; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein the thermal expansion control substance has a lower thermal expansion coefficient than the metal layer or a negative thermal expansion coefficient, and wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K.
The method according to claim 9, wherein the thermal expansion control substance comprises at least one of silicon carbide (SiC), graphite, graphene, carbon nanotube, diamond, M 2 B 3 0 12, AX 2 0s and A 2 P 2 WO i2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 9, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K.
The method according to claim 9, wherein the thermal expansion control substance directly contacts the metal layer.
canceled
canceled
The method according to claim 13, claim 9, wherein the support substrate comprises at least one of silicon (Si), silicon oxide (Si O 2), sapphire and quartz. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr Application No.: 14/201,274 Docket No.: 0465-4293PUS₁ Reply to Office Action of Page 4 of 7
A method for manufacturing graphene comprising: preparing a thermal-expansion compensation substrate comprising a support substrate and a thermal expansion control substance disposed on the support substrate, wherein the thermal expansion control substance has a thermal expansion coefficient of -50 ppm/K to 5 ppm/K; forming a metal layer on the thermal-expansion compensation substrate; and forming graphene on the metal layer, wherein a combination layer of the thermal-expansion compensation substrate and the metal layer has a thermal expansion coefficient of -20 ppm/K to 10 ppm/K.
The method according to claim 16, wherein the thermal expansion control substance comprises at least one of silicon carbide (SiC), graphite, graphene, carbon nanotube, diamond, M 2 B 3 0 12, AX 2 0s and A 2 P 2 WO i2, wherein M represents Al, Sc, In, Y, Zr, Hf or a lanthanide metal, B represents W, Mo or P, X represents W or Mo, and A represents Zr or H f.
The method according to claim 16, wherein the support substrate comprises at least one of silicon (Si), silicon oxide (Si O 2), sapphire and quartz.
The method according to claim 16, wherein the thermal- expansion compensation substrate is configured to compensate a phenomenon generated by difference in thermal expansion between the metal layer and the graphene. BIRCH, ST E WART, K O LASCH & BIRCH, LLP JT E/JT E/cdr
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
thermal-expansion compensation substrate with metal layer for graphene growth
Materials described outside the worked examples.
thermal expansion control substance
silicon carbide
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene thermal expansion coefficient | -8 ppm/K | graphene |
copper thermal expansion coefficient |
Related documents with shared materials, methods, properties, or citations.
M₂B₃O₁₂ (negative thermal expansion compound)
M₂B₃O₁₂
AX₂O₈ (negative thermal expansion compound)
AX₂O₈
A₂P₂WO₁₂ (negative thermal expansion compound)
A₂P₂WO₁₂
silicon
Si
silicon oxide
SiO₂
sapphire
quartz
graphite
carbon nanotube
diamond
graphene
catalyst metal layer
copper
Cu
| 16.4 ppm/K |
Cu |
thermal expansion control substance coefficient range (claim) | — | thermal expansion control substance |
combination layer thermal expansion coefficient range (claim) | — | — |
M₂B₃O₁₂ (negative thermal expansion compound)
M₂B₃O₁₂
AX₂O₈ (negative thermal expansion compound)
AX₂O₈
A₂P₂WO₁₂ (negative thermal expansion compound)
A₂P₂WO₁₂
silicon
Si
silicon oxide
SiO₂
sapphire
quartz
graphite
carbon nanotube
diamond
graphene
catalyst metal layer
copper
Cu
| 16.4 ppm/K |
Cu |
thermal expansion control substance coefficient range (claim) | — | thermal expansion control substance |
combination layer thermal expansion coefficient range (claim) | — | — |
M₂B₃O₁₂ (negative thermal expansion compound)
M₂B₃O₁₂
AX₂O₈ (negative thermal expansion compound)
AX₂O₈
A₂P₂WO₁₂ (negative thermal expansion compound)
A₂P₂WO₁₂
silicon
Si
silicon oxide
SiO₂
sapphire
quartz
graphite
carbon nanotube
diamond
graphene
catalyst metal layer
copper
Cu
| 16.4 ppm/K |
Cu |
thermal expansion control substance coefficient range (claim) | — | thermal expansion control substance |
combination layer thermal expansion coefficient range (claim) | — | — |
M₂B₃O₁₂ (negative thermal expansion compound)
M₂B₃O₁₂
AX₂O₈ (negative thermal expansion compound)
AX₂O₈
A₂P₂WO₁₂ (negative thermal expansion compound)
A₂P₂WO₁₂
silicon
Si
silicon oxide
SiO₂
sapphire
quartz
graphite
carbon nanotube
diamond
graphene
catalyst metal layer
copper
Cu
| 16.4 ppm/K |
Cu |
thermal expansion control substance coefficient range (claim) | — | thermal expansion control substance |
combination layer thermal expansion coefficient range (claim) | — | — |