Patent
US 8,709,881dielectric material
quartz
sapphire
fused silica
silicon oxide
SiOx
graphene
boron-nitride
BN
hydrocarbon precursor
silicon dioxide
SiO₂
silicon
Si
| — |
Thickness | 100–450 nm | — |
Thickness | 10–1000 nm | — |
Flow Rate | 0–100 sccm | — |
Flow Rate | 0–2000 sccm | — |
Pressure | 0–500 mTorr | — |
Thickness | 40–120 nm | — |
Thickness | 0.8–1.2 nm | — |
dielectric material
quartz
sapphire
fused silica
silicon oxide
SiOx
graphene
boron-nitride
BN
hydrocarbon precursor
silicon dioxide
SiO₂
silicon
Si
| — |
Thickness | 100–450 nm | — |
Thickness | 10–1000 nm | — |
Flow Rate | 0–100 sccm | — |
Flow Rate | 0–2000 sccm | — |
Pressure | 0–500 mTorr | — |
Thickness | 40–120 nm | — |
Thickness | 0.8–1.2 nm | — |
dielectric material
quartz
sapphire
fused silica
silicon oxide
SiOx
graphene
boron-nitride
BN
hydrocarbon precursor
silicon dioxide
SiO₂
silicon
Si
| — |
Thickness | 100–450 nm | — |
Thickness | 10–1000 nm | — |
Flow Rate | 0–100 sccm | — |
Flow Rate | 0–2000 sccm | — |
Pressure | 0–500 mTorr | — |
Thickness | 40–120 nm | — |
Thickness | 0.8–1.2 nm | — |
dielectric material
quartz
sapphire
fused silica
silicon oxide
SiOx
graphene
boron-nitride
BN
hydrocarbon precursor
silicon dioxide
SiO₂
silicon
Si
| — |
Thickness | 100–450 nm | — |
Thickness | 10–1000 nm | — |
Flow Rate | 0–100 sccm | — |
Flow Rate | 0–2000 sccm | — |
Pressure | 0–500 mTorr | — |
Thickness | 40–120 nm | — |
Thickness | 0.8–1.2 nm | — |