Patent
US 8,871,302Chemical Vapor Deposition of Graphene on Dielectrics
Po-Yuan TENG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,871,302Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, the process apparatus 1 includes a reactor 11, an intake gate 12 and an exhaust gate 13. In this embodiment, the material of the reactor 11 is …
FIGS. 2A to 2G are schematic illustrations showing different arrangements of the metals and dielectrics according to the preferred embodiment of the invention; …
FIG. 3A. The growth duration lasts for 1 to 300 m in. Methane (CH₄) may be used as the carbon-containing gas. [0049] In step S 07, the surface atoms of the …
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
FIG. 5 is a high-resolution transmission electron microscopy image of graphene grown on the surface of a dielectric 15. This image clearly shows that the 17 …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
FIG. 46D corresponds to the circled area of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing graphene by chemical vapor deposition comprising the following steps: disposing -mtaaanti dielectric substrates in a reactor-w-4e introducing reaction gases into the reactor; heating the reaction gases to be decomposed; and depositing graphene films on surfaces of the dielectric substrates
The method as recited in claim 1, wherein one of said metal vapors comprises one of the following: copper, nickel, zin c and a combination thereof.
The method as recited in claim 1, wherein one of said dielectric substrates comprises one of the following: silicon dioxide, quartz, sapphire, glass, sodium chloride, silicon nitride and a combination thereof. original
The method as recited in claim 1, wherein the reaction gases are comprised of hydrogen and a carbon-containing gas.
The method as recited in claim 1, prior to the step of disposing the dielectrics in the reactor, comprising a further step o f: treating the dielectrics using oxygen plasma. original
The method as recited in claim 1, wherein the decomposition temperature of the reaction gases range from 200 0 C. to 1200 0 C.
The method as recited in claim 1, wherein the films deposited on the surfaces of the dielectrics are graphene or multilayer graphene. original
The method as recited in claim 1, wherein seeds of graphite or graphene are disposed on the surfaces of the dielectrics before the dielectrics are disposed in the reactor. 15-20.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene
dielectric substrate
copper
Cu
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–1200 °C | — |
Thickness | 50–150 cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,871,302Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, the process apparatus 1 includes a reactor 11, an intake gate 12 and an exhaust gate 13. In this embodiment, the material of the reactor 11 is …
FIGS. 2A to 2G are schematic illustrations showing different arrangements of the metals and dielectrics according to the preferred embodiment of the invention; …
FIG. 3A. The growth duration lasts for 1 to 300 m in. Methane (CH₄) may be used as the carbon-containing gas. [0049] In step S 07, the surface atoms of the …
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
FIG. 5 is a high-resolution transmission electron microscopy image of graphene grown on the surface of a dielectric 15. This image clearly shows that the 17 …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
FIG. 46D corresponds to the circled area of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing graphene by chemical vapor deposition comprising the following steps: disposing -mtaaanti dielectric substrates in a reactor-w-4e introducing reaction gases into the reactor; heating the reaction gases to be decomposed; and depositing graphene films on surfaces of the dielectric substrates
The method as recited in claim 1, wherein one of said metal vapors comprises one of the following: copper, nickel, zin c and a combination thereof.
The method as recited in claim 1, wherein one of said dielectric substrates comprises one of the following: silicon dioxide, quartz, sapphire, glass, sodium chloride, silicon nitride and a combination thereof. original
The method as recited in claim 1, wherein the reaction gases are comprised of hydrogen and a carbon-containing gas.
The method as recited in claim 1, prior to the step of disposing the dielectrics in the reactor, comprising a further step o f: treating the dielectrics using oxygen plasma. original
The method as recited in claim 1, wherein the decomposition temperature of the reaction gases range from 200 0 C. to 1200 0 C.
The method as recited in claim 1, wherein the films deposited on the surfaces of the dielectrics are graphene or multilayer graphene. original
The method as recited in claim 1, wherein seeds of graphite or graphene are disposed on the surfaces of the dielectrics before the dielectrics are disposed in the reactor. 15-20.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene
dielectric substrate
copper
Cu
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–1200 °C | — |
Thickness | 50–150 cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,871,302Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, the process apparatus 1 includes a reactor 11, an intake gate 12 and an exhaust gate 13. In this embodiment, the material of the reactor 11 is …
FIGS. 2A to 2G are schematic illustrations showing different arrangements of the metals and dielectrics according to the preferred embodiment of the invention; …
FIG. 3A. The growth duration lasts for 1 to 300 m in. Methane (CH₄) may be used as the carbon-containing gas. [0049] In step S 07, the surface atoms of the …
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
FIG. 5 is a high-resolution transmission electron microscopy image of graphene grown on the surface of a dielectric 15. This image clearly shows that the 17 …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
FIG. 46D corresponds to the circled area of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing graphene by chemical vapor deposition comprising the following steps: disposing -mtaaanti dielectric substrates in a reactor-w-4e introducing reaction gases into the reactor; heating the reaction gases to be decomposed; and depositing graphene films on surfaces of the dielectric substrates
The method as recited in claim 1, wherein one of said metal vapors comprises one of the following: copper, nickel, zin c and a combination thereof.
The method as recited in claim 1, wherein one of said dielectric substrates comprises one of the following: silicon dioxide, quartz, sapphire, glass, sodium chloride, silicon nitride and a combination thereof. original
The method as recited in claim 1, wherein the reaction gases are comprised of hydrogen and a carbon-containing gas.
The method as recited in claim 1, prior to the step of disposing the dielectrics in the reactor, comprising a further step o f: treating the dielectrics using oxygen plasma. original
The method as recited in claim 1, wherein the decomposition temperature of the reaction gases range from 200 0 C. to 1200 0 C.
The method as recited in claim 1, wherein the films deposited on the surfaces of the dielectrics are graphene or multilayer graphene. original
The method as recited in claim 1, wherein seeds of graphite or graphene are disposed on the surfaces of the dielectrics before the dielectrics are disposed in the reactor. 15-20.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene
dielectric substrate
copper
Cu
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–1200 °C | — |
Thickness | 50–150 cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,871,302Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A, the process apparatus 1 includes a reactor 11, an intake gate 12 and an exhaust gate 13. In this embodiment, the material of the reactor 11 is …
FIGS. 2A to 2G are schematic illustrations showing different arrangements of the metals and dielectrics according to the preferred embodiment of the invention; …
FIG. 3A. The growth duration lasts for 1 to 300 m in. Methane (CH₄) may be used as the carbon-containing gas. [0049] In step S 07, the surface atoms of the …
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
FIG. 5 is a high-resolution transmission electron microscopy image of graphene grown on the surface of a dielectric 15. This image clearly shows that the 17 …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
FIG. 46D corresponds to the circled area of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing graphene by chemical vapor deposition comprising the following steps: disposing -mtaaanti dielectric substrates in a reactor-w-4e introducing reaction gases into the reactor; heating the reaction gases to be decomposed; and depositing graphene films on surfaces of the dielectric substrates
The method as recited in claim 1, wherein one of said metal vapors comprises one of the following: copper, nickel, zin c and a combination thereof.
The method as recited in claim 1, wherein one of said dielectric substrates comprises one of the following: silicon dioxide, quartz, sapphire, glass, sodium chloride, silicon nitride and a combination thereof. original
The method as recited in claim 1, wherein the reaction gases are comprised of hydrogen and a carbon-containing gas.
The method as recited in claim 1, prior to the step of disposing the dielectrics in the reactor, comprising a further step o f: treating the dielectrics using oxygen plasma. original
The method as recited in claim 1, wherein the decomposition temperature of the reaction gases range from 200 0 C. to 1200 0 C.
The method as recited in claim 1, wherein the films deposited on the surfaces of the dielectrics are graphene or multilayer graphene. original
The method as recited in claim 1, wherein seeds of graphite or graphene are disposed on the surfaces of the dielectrics before the dielectrics are disposed in the reactor. 15-20.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Materials described outside the worked examples.
graphene
dielectric substrate
copper
Cu
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 200–1200 °C | — |
Thickness | 50–150 cm |
Related documents with shared materials, methods, properties, or citations.
nickel
Ni
zinc
Zn
silicon dioxide
SiO₂
quartz
sapphire
Al₂O₃
glass
sodium chloride
NaCl
silicon nitride
Si₃N₄
hydrogen
H₂
carbon-containing gas
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
benzene
C₆H₆
carbon monoxide
CO
carbon dioxide
CO₂
inert gas
graphite
argon
Ar
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
FIG. 5 is a high-resolution transmission electron microscopy image of graphene grown on the surface of a dielectric 15. This image clearly shows that the 17 …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
| — |
Temperature | 950–1050 °C | — |
Thickness | 0–65 cm | — |
Methods of fabricating large-area Graphene
nickel
Ni
zinc
Zn
silicon dioxide
SiO₂
quartz
sapphire
Al₂O₃
glass
sodium chloride
NaCl
silicon nitride
Si₃N₄
hydrogen
H₂
carbon-containing gas
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
benzene
C₆H₆
carbon monoxide
CO
carbon dioxide
CO₂
inert gas
graphite
argon
Ar
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
FIG. 5 is a high-resolution transmission electron microscopy image of graphene grown on the surface of a dielectric 15. This image clearly shows that the 17 …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
| — |
Temperature | 950–1050 °C | — |
Thickness | 0–65 cm | — |
Methods of fabricating large-area Graphene
nickel
Ni
zinc
Zn
silicon dioxide
SiO₂
quartz
sapphire
Al₂O₃
glass
sodium chloride
NaCl
silicon nitride
Si₃N₄
hydrogen
H₂
carbon-containing gas
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
benzene
C₆H₆
carbon monoxide
CO
carbon dioxide
CO₂
inert gas
graphite
argon
Ar
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
FIG. 5 is a high-resolution transmission electron microscopy image of graphene grown on the surface of a dielectric 15. This image clearly shows that the 17 …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
| — |
Temperature | 950–1050 °C | — |
Thickness | 0–65 cm | — |
Methods of fabricating large-area Graphene
nickel
Ni
zinc
Zn
silicon dioxide
SiO₂
quartz
sapphire
Al₂O₃
glass
sodium chloride
NaCl
silicon nitride
Si₃N₄
hydrogen
H₂
carbon-containing gas
methane
CH₄
acetylene
C₂H₂
ethylene
C₂H₄
benzene
C₆H₆
carbon monoxide
CO
carbon dioxide
CO₂
inert gas
graphite
argon
Ar
FIG. 4D is at about 1350 cm 1. This vibrational frequency is activated by crystal defects of the graphene plane, and 16 its intensity indicates the defect …
FIG. 5 is a high-resolution transmission electron microscopy image of graphene grown on the surface of a dielectric 15. This image clearly shows that the 17 …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
FIGS. 6A to 6C and 6D are respectively the two-dimensional Raman maps 7 and spectrum of a graphene film grown on the surface of the silicon oxide with the …
| — |
Temperature | 950–1050 °C | — |
Thickness | 0–65 cm | — |