Patent
US 8,685,843DIRECT GROWTH OF GRAPHENE ON SUBSTRATES
Lain-Jong Li, Ching-Yuan Su, Ang-Yu Lu, Chih-Yu Wu et al.
2014-04-01·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,685,843Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(O rigin al) The method of cla im 1 m which the dielect nc substrate comp ri ses at least one of a si li con substrate, a quartz substrate, a glass substrate, a sapphire substrate, or a boron nitri de substrate
(O rigin al) The method of claim 1, comp risin g deposit in g a precursor mate ri al hav in g carbon atoms on a surface of the copper th in film us in g at least one of physical vapor deposition, atomic layer deposition, epitaxial growth method, or molecular beam epitaxy method
(O rigin al) The method of claim 1, comp risin g remov in g the copper th in film to expose the graphene layer
(O rigin al) The method of claim 12 m which remov in g the copper th in film comp n ses us in g at least one of chemical etch in g, electrochemical etch in g, or mecha ni cal removal to remove the copper th in film
(O rigin al) The method of claim 12 m which remov in g the copper th in film comp n ses us in g a solution conta inin g Fe(N O 3)3 to etch the copper th in film
(O rigin al) The method of 1, comp risin g form in g a bi-layer graphene th in film hav in g two sheets of carbon atoms
(O rigin al) The method of 1, comp risin g form in g a t n -layer graphene th in film hav in g three sheets of carbon atoms
(O rigin al) The method of claim 1, comp risin g heat in g the substrate and the copper th in film m a hydrogen atmosphere to remove an oxide layer from the copper th in film p r or to diffus in g the carbon atoms App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 4 of 11
The method of claim 39, comp risin g pattern in g the copper th in film, and form in g a patterned graphene layer
(Orig in al) The method of claim 18, compris in g fabricat in g a transistor based on the patterned graphene layer
The method of claim 1, comp risin g fabricat in g a li quid-gated graphene transistor based on a patterned graphene layer, the li quid-gated graphene transistor compris in g a reservoir configured to hold a droplet above the graphene layer previously presented
canceled
The method of claim 1, comp risin g form in g a graphene th in film having a stacked structure, m which the graphene th in film comprises A- B stacked bilayer graphene
A method compris ing form in g a metal th in film on a substrate, deposit in g a precursor material hav in g an in orga nic material on a first surface of the metal th in film, the first surface fac in g away from the substrate, diff usin g atoms of [[an]] the in orga nic material from the first surface through the metal th in film to a second surface of the metal th in film, the second surface fac in g the substrate, [[and]] form in g a layer of material at an in terface between the metal th in film and the substrate, the layer of material compris in g the atoms of the in orga nic material that diffused through the metal th in film, and cont in uously deposit in g the precursor material on the first surface of the metal th in film, diff usin g the atoms of the in orga nic material from the first surface to the second surface of the metal th in film, and form in g the layer of material for a period of time, such that the diff u sion of atoms of the in orga nic material and the formation of the layer of material are performed while additional precursor material is be in g deposited App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 5 of 11
(O rigin al) The method of claim 23, comp risin g provid in g a precursor mate ri al and caus in g the precursor mate ri al to dissociate at the metal th in surface to produce the atoms that diffuse through the metal th in film
(O rigin al) The method of claim 23 m which the metal th in film comp n ses a copper th in film
(O rigin al) The method of claim 23 m which the substrate comp n ses a dielect ric substrate
(O rigin al) The method of claim 23 m which the atoms of the in orga nic mate ri al comp ri se carbon, and form in g a layer of mate n al at an in terface comp n ses form in g a graphene layer at the in terface
(O rigin al) The method of claim 23 m which the metal th in film has a thickness in a range from about 10 nm to about 1 pm
A method comp rising form in g a copper th in film on a dielect ric substrate, pattern in g the copper th in film, deposit in g precursor mate ri al on the copper th in film us in g chemical vapor deposition, the precursor mate ri al comp nsin g carbon, apply in g plasma to assist dissociation of the precursor mate ri al to produce carbon atoms, diffus in g the carbon atoms through the patterned copper thin film, form in g a patterned graphene layer at an in terface between the copper th in film and the dielect ric substrate while additional precursor mate n al is be in g deposited on the copper th in film, remov in g the patterned copper thin film, and form in g electrodes on the dielect ric substrate m which at least a portion of the graphene layer is disposed between the electrodes 30-36
canceled
(O ngin al) The apparatus of claim 30 m which the substrate comp ri ses at least one of a si li con substrate, a quartz substrate, a glass substrate, a sapphire substrate, or a boron nitn de substrate
canceled
canceled
canceled
canceled
canceled
canceled
An apparatus comp rising a substrate, a graphene layer formed on the substrate by diffus in g carbon through a metal th in layer on the substrate and remov in g the metal thin layer, the graphene layer comp risin g A- B stacked bilayer graphene, source and dra in electrodes, m which at least a portion of the graphene layer is disposed between the source and dra in electrodes, and a gate electrode
The method of claim 5, comp nsin g apply in g plasma to assist dissociation of the precursor mate ri al to produce the carbon atoms
The method of claim 1, comp nsin g cont in uously deposit in g the precursor mate n al on the first surface of the copper th in film, diffus in g the carbon atoms from the first surface to the second surface of the copper th in film, and form in g the graphene layer for a pe ri od of time, such that the diffusion of carbon atoms and the formation of the graphene layer are performed while additional precursor mate ri al is be ing deposited
The method of claim 1 m which the deposit in g the precursor mate rial on the first surface of the copper th in film, diffus in g the carbon atoms from the first surface to the second surface of the copper th in film, and form in g the graphene layer are performed under a same temperature
A method comp rising form in g a copper th in film on a dielect nc substrate, the copper th in film hav ing gra m s of copper, App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 7 of 11 deposit in g a precursor mate ri al hav in g carbon atoms on a surface of the copper th in film, diff usin g the carbon atoms from the surface of the copper th in film through ope ni ngs between copper gra in boundaries to reach an in terface between the copper th in film and the dielectric substrate, and form in g a graphene layer at the in terface between the copper th in film and the dielectric substrate, where in the precursor mate ri al is cont in uously deposited on the surface of the copper th in film, and the carbon atoms are cont in uously diffused from the surface of the copper th in film to the in terface as the graphene layer is formed at the in terface over a period of time
The method of claim 42 m which deposit in g the precursor material on the surface of the copper th in film, diffus in g the carbon atoms from the surface of the copper th in film to the in terface, and form in g the graphene layer are performed under a same temperature
The method of claim 42, compris in g pattern in g the copper th in film, and form in g a patterned graphene layer
The method of claim 42, compris in g deposit vapor deposition at a temperature m a range from in g the precursor material us in g chemical about 300 ° C to about 1050 °C
Layer stacks claimed or described, ordered top of device to substrate.
graphene transistor
liquid-gated graphene transistor
graphene electrode device
A-B stacked bilayer graphene transistor
Materials described outside the worked examples.
silicon substrate
quartz substrate
glass substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 300–1050 °C | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,685,843Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(O rigin al) The method of cla im 1 m which the dielect nc substrate comp ri ses at least one of a si li con substrate, a quartz substrate, a glass substrate, a sapphire substrate, or a boron nitri de substrate
(O rigin al) The method of claim 1, comp risin g deposit in g a precursor mate ri al hav in g carbon atoms on a surface of the copper th in film us in g at least one of physical vapor deposition, atomic layer deposition, epitaxial growth method, or molecular beam epitaxy method
(O rigin al) The method of claim 1, comp risin g remov in g the copper th in film to expose the graphene layer
(O rigin al) The method of claim 12 m which remov in g the copper th in film comp n ses us in g at least one of chemical etch in g, electrochemical etch in g, or mecha ni cal removal to remove the copper th in film
(O rigin al) The method of claim 12 m which remov in g the copper th in film comp n ses us in g a solution conta inin g Fe(N O 3)3 to etch the copper th in film
(O rigin al) The method of 1, comp risin g form in g a bi-layer graphene th in film hav in g two sheets of carbon atoms
(O rigin al) The method of 1, comp risin g form in g a t n -layer graphene th in film hav in g three sheets of carbon atoms
(O rigin al) The method of claim 1, comp risin g heat in g the substrate and the copper th in film m a hydrogen atmosphere to remove an oxide layer from the copper th in film p r or to diffus in g the carbon atoms App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 4 of 11
The method of claim 39, comp risin g pattern in g the copper th in film, and form in g a patterned graphene layer
(Orig in al) The method of claim 18, compris in g fabricat in g a transistor based on the patterned graphene layer
The method of claim 1, comp risin g fabricat in g a li quid-gated graphene transistor based on a patterned graphene layer, the li quid-gated graphene transistor compris in g a reservoir configured to hold a droplet above the graphene layer previously presented
canceled
The method of claim 1, comp risin g form in g a graphene th in film having a stacked structure, m which the graphene th in film comprises A- B stacked bilayer graphene
A method compris ing form in g a metal th in film on a substrate, deposit in g a precursor material hav in g an in orga nic material on a first surface of the metal th in film, the first surface fac in g away from the substrate, diff usin g atoms of [[an]] the in orga nic material from the first surface through the metal th in film to a second surface of the metal th in film, the second surface fac in g the substrate, [[and]] form in g a layer of material at an in terface between the metal th in film and the substrate, the layer of material compris in g the atoms of the in orga nic material that diffused through the metal th in film, and cont in uously deposit in g the precursor material on the first surface of the metal th in film, diff usin g the atoms of the in orga nic material from the first surface to the second surface of the metal th in film, and form in g the layer of material for a period of time, such that the diff u sion of atoms of the in orga nic material and the formation of the layer of material are performed while additional precursor material is be in g deposited App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 5 of 11
(O rigin al) The method of claim 23, comp risin g provid in g a precursor mate ri al and caus in g the precursor mate ri al to dissociate at the metal th in surface to produce the atoms that diffuse through the metal th in film
(O rigin al) The method of claim 23 m which the metal th in film comp n ses a copper th in film
(O rigin al) The method of claim 23 m which the substrate comp n ses a dielect ric substrate
(O rigin al) The method of claim 23 m which the atoms of the in orga nic mate ri al comp ri se carbon, and form in g a layer of mate n al at an in terface comp n ses form in g a graphene layer at the in terface
(O rigin al) The method of claim 23 m which the metal th in film has a thickness in a range from about 10 nm to about 1 pm
A method comp rising form in g a copper th in film on a dielect ric substrate, pattern in g the copper th in film, deposit in g precursor mate ri al on the copper th in film us in g chemical vapor deposition, the precursor mate ri al comp nsin g carbon, apply in g plasma to assist dissociation of the precursor mate ri al to produce carbon atoms, diffus in g the carbon atoms through the patterned copper thin film, form in g a patterned graphene layer at an in terface between the copper th in film and the dielect ric substrate while additional precursor mate n al is be in g deposited on the copper th in film, remov in g the patterned copper thin film, and form in g electrodes on the dielect ric substrate m which at least a portion of the graphene layer is disposed between the electrodes 30-36
canceled
(O ngin al) The apparatus of claim 30 m which the substrate comp ri ses at least one of a si li con substrate, a quartz substrate, a glass substrate, a sapphire substrate, or a boron nitn de substrate
canceled
canceled
canceled
canceled
canceled
canceled
An apparatus comp rising a substrate, a graphene layer formed on the substrate by diffus in g carbon through a metal th in layer on the substrate and remov in g the metal thin layer, the graphene layer comp risin g A- B stacked bilayer graphene, source and dra in electrodes, m which at least a portion of the graphene layer is disposed between the source and dra in electrodes, and a gate electrode
The method of claim 5, comp nsin g apply in g plasma to assist dissociation of the precursor mate ri al to produce the carbon atoms
The method of claim 1, comp nsin g cont in uously deposit in g the precursor mate n al on the first surface of the copper th in film, diffus in g the carbon atoms from the first surface to the second surface of the copper th in film, and form in g the graphene layer for a pe ri od of time, such that the diffusion of carbon atoms and the formation of the graphene layer are performed while additional precursor mate ri al is be ing deposited
The method of claim 1 m which the deposit in g the precursor mate rial on the first surface of the copper th in film, diffus in g the carbon atoms from the first surface to the second surface of the copper th in film, and form in g the graphene layer are performed under a same temperature
A method comp rising form in g a copper th in film on a dielect nc substrate, the copper th in film hav ing gra m s of copper, App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 7 of 11 deposit in g a precursor mate ri al hav in g carbon atoms on a surface of the copper th in film, diff usin g the carbon atoms from the surface of the copper th in film through ope ni ngs between copper gra in boundaries to reach an in terface between the copper th in film and the dielectric substrate, and form in g a graphene layer at the in terface between the copper th in film and the dielectric substrate, where in the precursor mate ri al is cont in uously deposited on the surface of the copper th in film, and the carbon atoms are cont in uously diffused from the surface of the copper th in film to the in terface as the graphene layer is formed at the in terface over a period of time
The method of claim 42 m which deposit in g the precursor material on the surface of the copper th in film, diffus in g the carbon atoms from the surface of the copper th in film to the in terface, and form in g the graphene layer are performed under a same temperature
The method of claim 42, compris in g pattern in g the copper th in film, and form in g a patterned graphene layer
The method of claim 42, compris in g deposit vapor deposition at a temperature m a range from in g the precursor material us in g chemical about 300 ° C to about 1050 °C
Layer stacks claimed or described, ordered top of device to substrate.
graphene transistor
liquid-gated graphene transistor
graphene electrode device
A-B stacked bilayer graphene transistor
Materials described outside the worked examples.
silicon substrate
quartz substrate
glass substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 300–1050 °C | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,685,843Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(O rigin al) The method of cla im 1 m which the dielect nc substrate comp ri ses at least one of a si li con substrate, a quartz substrate, a glass substrate, a sapphire substrate, or a boron nitri de substrate
(O rigin al) The method of claim 1, comp risin g deposit in g a precursor mate ri al hav in g carbon atoms on a surface of the copper th in film us in g at least one of physical vapor deposition, atomic layer deposition, epitaxial growth method, or molecular beam epitaxy method
(O rigin al) The method of claim 1, comp risin g remov in g the copper th in film to expose the graphene layer
(O rigin al) The method of claim 12 m which remov in g the copper th in film comp n ses us in g at least one of chemical etch in g, electrochemical etch in g, or mecha ni cal removal to remove the copper th in film
(O rigin al) The method of claim 12 m which remov in g the copper th in film comp n ses us in g a solution conta inin g Fe(N O 3)3 to etch the copper th in film
(O rigin al) The method of 1, comp risin g form in g a bi-layer graphene th in film hav in g two sheets of carbon atoms
(O rigin al) The method of 1, comp risin g form in g a t n -layer graphene th in film hav in g three sheets of carbon atoms
(O rigin al) The method of claim 1, comp risin g heat in g the substrate and the copper th in film m a hydrogen atmosphere to remove an oxide layer from the copper th in film p r or to diffus in g the carbon atoms App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 4 of 11
The method of claim 39, comp risin g pattern in g the copper th in film, and form in g a patterned graphene layer
(Orig in al) The method of claim 18, compris in g fabricat in g a transistor based on the patterned graphene layer
The method of claim 1, comp risin g fabricat in g a li quid-gated graphene transistor based on a patterned graphene layer, the li quid-gated graphene transistor compris in g a reservoir configured to hold a droplet above the graphene layer previously presented
canceled
The method of claim 1, comp risin g form in g a graphene th in film having a stacked structure, m which the graphene th in film comprises A- B stacked bilayer graphene
A method compris ing form in g a metal th in film on a substrate, deposit in g a precursor material hav in g an in orga nic material on a first surface of the metal th in film, the first surface fac in g away from the substrate, diff usin g atoms of [[an]] the in orga nic material from the first surface through the metal th in film to a second surface of the metal th in film, the second surface fac in g the substrate, [[and]] form in g a layer of material at an in terface between the metal th in film and the substrate, the layer of material compris in g the atoms of the in orga nic material that diffused through the metal th in film, and cont in uously deposit in g the precursor material on the first surface of the metal th in film, diff usin g the atoms of the in orga nic material from the first surface to the second surface of the metal th in film, and form in g the layer of material for a period of time, such that the diff u sion of atoms of the in orga nic material and the formation of the layer of material are performed while additional precursor material is be in g deposited App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 5 of 11
(O rigin al) The method of claim 23, comp risin g provid in g a precursor mate ri al and caus in g the precursor mate ri al to dissociate at the metal th in surface to produce the atoms that diffuse through the metal th in film
(O rigin al) The method of claim 23 m which the metal th in film comp n ses a copper th in film
(O rigin al) The method of claim 23 m which the substrate comp n ses a dielect ric substrate
(O rigin al) The method of claim 23 m which the atoms of the in orga nic mate ri al comp ri se carbon, and form in g a layer of mate n al at an in terface comp n ses form in g a graphene layer at the in terface
(O rigin al) The method of claim 23 m which the metal th in film has a thickness in a range from about 10 nm to about 1 pm
A method comp rising form in g a copper th in film on a dielect ric substrate, pattern in g the copper th in film, deposit in g precursor mate ri al on the copper th in film us in g chemical vapor deposition, the precursor mate ri al comp nsin g carbon, apply in g plasma to assist dissociation of the precursor mate ri al to produce carbon atoms, diffus in g the carbon atoms through the patterned copper thin film, form in g a patterned graphene layer at an in terface between the copper th in film and the dielect ric substrate while additional precursor mate n al is be in g deposited on the copper th in film, remov in g the patterned copper thin film, and form in g electrodes on the dielect ric substrate m which at least a portion of the graphene layer is disposed between the electrodes 30-36
canceled
(O ngin al) The apparatus of claim 30 m which the substrate comp ri ses at least one of a si li con substrate, a quartz substrate, a glass substrate, a sapphire substrate, or a boron nitn de substrate
canceled
canceled
canceled
canceled
canceled
canceled
An apparatus comp rising a substrate, a graphene layer formed on the substrate by diffus in g carbon through a metal th in layer on the substrate and remov in g the metal thin layer, the graphene layer comp risin g A- B stacked bilayer graphene, source and dra in electrodes, m which at least a portion of the graphene layer is disposed between the source and dra in electrodes, and a gate electrode
The method of claim 5, comp nsin g apply in g plasma to assist dissociation of the precursor mate ri al to produce the carbon atoms
The method of claim 1, comp nsin g cont in uously deposit in g the precursor mate n al on the first surface of the copper th in film, diffus in g the carbon atoms from the first surface to the second surface of the copper th in film, and form in g the graphene layer for a pe ri od of time, such that the diffusion of carbon atoms and the formation of the graphene layer are performed while additional precursor mate ri al is be ing deposited
The method of claim 1 m which the deposit in g the precursor mate rial on the first surface of the copper th in film, diffus in g the carbon atoms from the first surface to the second surface of the copper th in film, and form in g the graphene layer are performed under a same temperature
A method comp rising form in g a copper th in film on a dielect nc substrate, the copper th in film hav ing gra m s of copper, App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 7 of 11 deposit in g a precursor mate ri al hav in g carbon atoms on a surface of the copper th in film, diff usin g the carbon atoms from the surface of the copper th in film through ope ni ngs between copper gra in boundaries to reach an in terface between the copper th in film and the dielectric substrate, and form in g a graphene layer at the in terface between the copper th in film and the dielectric substrate, where in the precursor mate ri al is cont in uously deposited on the surface of the copper th in film, and the carbon atoms are cont in uously diffused from the surface of the copper th in film to the in terface as the graphene layer is formed at the in terface over a period of time
The method of claim 42 m which deposit in g the precursor material on the surface of the copper th in film, diffus in g the carbon atoms from the surface of the copper th in film to the in terface, and form in g the graphene layer are performed under a same temperature
The method of claim 42, compris in g pattern in g the copper th in film, and form in g a patterned graphene layer
The method of claim 42, compris in g deposit vapor deposition at a temperature m a range from in g the precursor material us in g chemical about 300 ° C to about 1050 °C
Layer stacks claimed or described, ordered top of device to substrate.
graphene transistor
liquid-gated graphene transistor
graphene electrode device
A-B stacked bilayer graphene transistor
Materials described outside the worked examples.
silicon substrate
quartz substrate
glass substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 300–1050 °C | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,685,843Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(O rigin al) The method of cla im 1 m which the dielect nc substrate comp ri ses at least one of a si li con substrate, a quartz substrate, a glass substrate, a sapphire substrate, or a boron nitri de substrate
(O rigin al) The method of claim 1, comp risin g deposit in g a precursor mate ri al hav in g carbon atoms on a surface of the copper th in film us in g at least one of physical vapor deposition, atomic layer deposition, epitaxial growth method, or molecular beam epitaxy method
(O rigin al) The method of claim 1, comp risin g remov in g the copper th in film to expose the graphene layer
(O rigin al) The method of claim 12 m which remov in g the copper th in film comp n ses us in g at least one of chemical etch in g, electrochemical etch in g, or mecha ni cal removal to remove the copper th in film
(O rigin al) The method of claim 12 m which remov in g the copper th in film comp n ses us in g a solution conta inin g Fe(N O 3)3 to etch the copper th in film
(O rigin al) The method of 1, comp risin g form in g a bi-layer graphene th in film hav in g two sheets of carbon atoms
(O rigin al) The method of 1, comp risin g form in g a t n -layer graphene th in film hav in g three sheets of carbon atoms
(O rigin al) The method of claim 1, comp risin g heat in g the substrate and the copper th in film m a hydrogen atmosphere to remove an oxide layer from the copper th in film p r or to diffus in g the carbon atoms App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 4 of 11
The method of claim 39, comp risin g pattern in g the copper th in film, and form in g a patterned graphene layer
(Orig in al) The method of claim 18, compris in g fabricat in g a transistor based on the patterned graphene layer
The method of claim 1, comp risin g fabricat in g a li quid-gated graphene transistor based on a patterned graphene layer, the li quid-gated graphene transistor compris in g a reservoir configured to hold a droplet above the graphene layer previously presented
canceled
The method of claim 1, comp risin g form in g a graphene th in film having a stacked structure, m which the graphene th in film comprises A- B stacked bilayer graphene
A method compris ing form in g a metal th in film on a substrate, deposit in g a precursor material hav in g an in orga nic material on a first surface of the metal th in film, the first surface fac in g away from the substrate, diff usin g atoms of [[an]] the in orga nic material from the first surface through the metal th in film to a second surface of the metal th in film, the second surface fac in g the substrate, [[and]] form in g a layer of material at an in terface between the metal th in film and the substrate, the layer of material compris in g the atoms of the in orga nic material that diffused through the metal th in film, and cont in uously deposit in g the precursor material on the first surface of the metal th in film, diff usin g the atoms of the in orga nic material from the first surface to the second surface of the metal th in film, and form in g the layer of material for a period of time, such that the diff u sion of atoms of the in orga nic material and the formation of the layer of material are performed while additional precursor material is be in g deposited App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 5 of 11
(O rigin al) The method of claim 23, comp risin g provid in g a precursor mate ri al and caus in g the precursor mate ri al to dissociate at the metal th in surface to produce the atoms that diffuse through the metal th in film
(O rigin al) The method of claim 23 m which the metal th in film comp n ses a copper th in film
(O rigin al) The method of claim 23 m which the substrate comp n ses a dielect ric substrate
(O rigin al) The method of claim 23 m which the atoms of the in orga nic mate ri al comp ri se carbon, and form in g a layer of mate n al at an in terface comp n ses form in g a graphene layer at the in terface
(O rigin al) The method of claim 23 m which the metal th in film has a thickness in a range from about 10 nm to about 1 pm
A method comp rising form in g a copper th in film on a dielect ric substrate, pattern in g the copper th in film, deposit in g precursor mate ri al on the copper th in film us in g chemical vapor deposition, the precursor mate ri al comp nsin g carbon, apply in g plasma to assist dissociation of the precursor mate ri al to produce carbon atoms, diffus in g the carbon atoms through the patterned copper thin film, form in g a patterned graphene layer at an in terface between the copper th in film and the dielect ric substrate while additional precursor mate n al is be in g deposited on the copper th in film, remov in g the patterned copper thin film, and form in g electrodes on the dielect ric substrate m which at least a portion of the graphene layer is disposed between the electrodes 30-36
canceled
(O ngin al) The apparatus of claim 30 m which the substrate comp ri ses at least one of a si li con substrate, a quartz substrate, a glass substrate, a sapphire substrate, or a boron nitn de substrate
canceled
canceled
canceled
canceled
canceled
canceled
An apparatus comp rising a substrate, a graphene layer formed on the substrate by diffus in g carbon through a metal th in layer on the substrate and remov in g the metal thin layer, the graphene layer comp risin g A- B stacked bilayer graphene, source and dra in electrodes, m which at least a portion of the graphene layer is disposed between the source and dra in electrodes, and a gate electrode
The method of claim 5, comp nsin g apply in g plasma to assist dissociation of the precursor mate ri al to produce the carbon atoms
The method of claim 1, comp nsin g cont in uously deposit in g the precursor mate n al on the first surface of the copper th in film, diffus in g the carbon atoms from the first surface to the second surface of the copper th in film, and form in g the graphene layer for a pe ri od of time, such that the diffusion of carbon atoms and the formation of the graphene layer are performed while additional precursor mate ri al is be ing deposited
The method of claim 1 m which the deposit in g the precursor mate rial on the first surface of the copper th in film, diffus in g the carbon atoms from the first surface to the second surface of the copper th in film, and form in g the graphene layer are performed under a same temperature
A method comp rising form in g a copper th in film on a dielect nc substrate, the copper th in film hav ing gra m s of copper, App li cant La in -Jong L i et al Attorney Docket 08919-0168001/26A-1000513 Seri al No 13/346,152 Filed Page 7 of 11 deposit in g a precursor mate ri al hav in g carbon atoms on a surface of the copper th in film, diff usin g the carbon atoms from the surface of the copper th in film through ope ni ngs between copper gra in boundaries to reach an in terface between the copper th in film and the dielectric substrate, and form in g a graphene layer at the in terface between the copper th in film and the dielectric substrate, where in the precursor mate ri al is cont in uously deposited on the surface of the copper th in film, and the carbon atoms are cont in uously diffused from the surface of the copper th in film to the in terface as the graphene layer is formed at the in terface over a period of time
The method of claim 42 m which deposit in g the precursor material on the surface of the copper th in film, diffus in g the carbon atoms from the surface of the copper th in film to the in terface, and form in g the graphene layer are performed under a same temperature
The method of claim 42, compris in g pattern in g the copper th in film, and form in g a patterned graphene layer
The method of claim 42, compris in g deposit vapor deposition at a temperature m a range from in g the precursor material us in g chemical about 300 ° C to about 1050 °C
Layer stacks claimed or described, ordered top of device to substrate.
graphene transistor
liquid-gated graphene transistor
graphene electrode device
A-B stacked bilayer graphene transistor
Materials described outside the worked examples.
silicon substrate
quartz substrate
glass substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 300–1050 °C | — |
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