Patent
US 9,803,275METHOD FOR MANUFACTURING GRAPHENE COMPOSITE ELECTRODE MATERIAL
Yewen Wang
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,803,275Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a flow chart illustrating a method for manufactu ri ng a graphene composite electrode mate ri al according to the present invention
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene composite electrode material, comprising the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1 100 °C; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material; wherein the metal film is formed on the glass substrate by means of sputtering through physical vapor deposition with metal ruthenium as a target material. Currently amended
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the glass substrate is a yttrium oxide based glass substrate, an aluminum oxide based glass substrate, or a silicon dioxide based glass substrate. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the target material has purity greater than 99.9%. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the metal film has a thickness of lO nm- SOO nm. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein step (3) comprises: coating positive photoresist on the metal film and after exposure and development, applying etching to the metal film to form a predetermined pattern, thereby forming the circuit pattern. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein step (4) comprises: providing a mask, attaching the mask to a surface of the glass substrate on which the circuit pattern is formed in such a way as to expose the circuit pattern, and then forming the graphene film on the circuit pattern. Original
Canceled
A method for manufacturing a graphene composite electrode material, comprising the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1 100 °C; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material; wherein the glass substrate is a yttrium oxide based glass substrate, an aluminum oxide based glass substrate, or a silicon dioxide based glass substrate; wherein in the glass substrate, a total amount of content of alkali metals is less than 0.3ppm, zirconium content being less than or equal to 0.3ppm, titanium content being less than or equal to 1.4ppm, calcium content being less than or equal to 0.6ppm, magnesium content being less than 0.l ppm, boron content being less than 0.l ppm, copper content being less than 0.0l ppm, and phosphorus content being less than 0.2ppm; wherein in the glass substrate, lithium content is less than or equal to 0.00l ppm, potassium content being less than 0.2ppm, and sodium content being less than or equal to 0.l ppm; wherein the metal film is formed on the glass substrate by means of sputtering through physical vapor deposition with metal ruthenium as a target material; and wherein the target material has purity greater than 99.9%. Currently amended
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein the metal film has a thickness of lO nm- SOO nm. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein step (3) comprises: coating positive photoresist on the metal film and after exposure and development, applying etching to the metal film to form a predetermined pattern, thereby forming the circuit pattern. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein step (4) comprises: providing a mask, attaching the mask to a surface of the glass substrate on which the circuit pattern is formed in such a way as to expose the circuit pattern, and then forming the graphene film on the circuit pattern. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene composite electrode material
Materials described outside the worked examples.
graphene film
ruthenium
Ru
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1050 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,803,275Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a flow chart illustrating a method for manufactu ri ng a graphene composite electrode mate ri al according to the present invention
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene composite electrode material, comprising the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1 100 °C; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material; wherein the metal film is formed on the glass substrate by means of sputtering through physical vapor deposition with metal ruthenium as a target material. Currently amended
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the glass substrate is a yttrium oxide based glass substrate, an aluminum oxide based glass substrate, or a silicon dioxide based glass substrate. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the target material has purity greater than 99.9%. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the metal film has a thickness of lO nm- SOO nm. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein step (3) comprises: coating positive photoresist on the metal film and after exposure and development, applying etching to the metal film to form a predetermined pattern, thereby forming the circuit pattern. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein step (4) comprises: providing a mask, attaching the mask to a surface of the glass substrate on which the circuit pattern is formed in such a way as to expose the circuit pattern, and then forming the graphene film on the circuit pattern. Original
Canceled
A method for manufacturing a graphene composite electrode material, comprising the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1 100 °C; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material; wherein the glass substrate is a yttrium oxide based glass substrate, an aluminum oxide based glass substrate, or a silicon dioxide based glass substrate; wherein in the glass substrate, a total amount of content of alkali metals is less than 0.3ppm, zirconium content being less than or equal to 0.3ppm, titanium content being less than or equal to 1.4ppm, calcium content being less than or equal to 0.6ppm, magnesium content being less than 0.l ppm, boron content being less than 0.l ppm, copper content being less than 0.0l ppm, and phosphorus content being less than 0.2ppm; wherein in the glass substrate, lithium content is less than or equal to 0.00l ppm, potassium content being less than 0.2ppm, and sodium content being less than or equal to 0.l ppm; wherein the metal film is formed on the glass substrate by means of sputtering through physical vapor deposition with metal ruthenium as a target material; and wherein the target material has purity greater than 99.9%. Currently amended
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein the metal film has a thickness of lO nm- SOO nm. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein step (3) comprises: coating positive photoresist on the metal film and after exposure and development, applying etching to the metal film to form a predetermined pattern, thereby forming the circuit pattern. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein step (4) comprises: providing a mask, attaching the mask to a surface of the glass substrate on which the circuit pattern is formed in such a way as to expose the circuit pattern, and then forming the graphene film on the circuit pattern. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene composite electrode material
Materials described outside the worked examples.
graphene film
ruthenium
Ru
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1050 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,803,275Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a flow chart illustrating a method for manufactu ri ng a graphene composite electrode mate ri al according to the present invention
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene composite electrode material, comprising the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1 100 °C; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material; wherein the metal film is formed on the glass substrate by means of sputtering through physical vapor deposition with metal ruthenium as a target material. Currently amended
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the glass substrate is a yttrium oxide based glass substrate, an aluminum oxide based glass substrate, or a silicon dioxide based glass substrate. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the target material has purity greater than 99.9%. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the metal film has a thickness of lO nm- SOO nm. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein step (3) comprises: coating positive photoresist on the metal film and after exposure and development, applying etching to the metal film to form a predetermined pattern, thereby forming the circuit pattern. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein step (4) comprises: providing a mask, attaching the mask to a surface of the glass substrate on which the circuit pattern is formed in such a way as to expose the circuit pattern, and then forming the graphene film on the circuit pattern. Original
Canceled
A method for manufacturing a graphene composite electrode material, comprising the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1 100 °C; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material; wherein the glass substrate is a yttrium oxide based glass substrate, an aluminum oxide based glass substrate, or a silicon dioxide based glass substrate; wherein in the glass substrate, a total amount of content of alkali metals is less than 0.3ppm, zirconium content being less than or equal to 0.3ppm, titanium content being less than or equal to 1.4ppm, calcium content being less than or equal to 0.6ppm, magnesium content being less than 0.l ppm, boron content being less than 0.l ppm, copper content being less than 0.0l ppm, and phosphorus content being less than 0.2ppm; wherein in the glass substrate, lithium content is less than or equal to 0.00l ppm, potassium content being less than 0.2ppm, and sodium content being less than or equal to 0.l ppm; wherein the metal film is formed on the glass substrate by means of sputtering through physical vapor deposition with metal ruthenium as a target material; and wherein the target material has purity greater than 99.9%. Currently amended
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein the metal film has a thickness of lO nm- SOO nm. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein step (3) comprises: coating positive photoresist on the metal film and after exposure and development, applying etching to the metal film to form a predetermined pattern, thereby forming the circuit pattern. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein step (4) comprises: providing a mask, attaching the mask to a surface of the glass substrate on which the circuit pattern is formed in such a way as to expose the circuit pattern, and then forming the graphene film on the circuit pattern. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene composite electrode material
Materials described outside the worked examples.
graphene film
ruthenium
Ru
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1050 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,803,275Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a flow chart illustrating a method for manufactu ri ng a graphene composite electrode mate ri al according to the present invention
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a graphene composite electrode material, comprising the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1 100 °C; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material; wherein the metal film is formed on the glass substrate by means of sputtering through physical vapor deposition with metal ruthenium as a target material. Currently amended
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the glass substrate is a yttrium oxide based glass substrate, an aluminum oxide based glass substrate, or a silicon dioxide based glass substrate. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the target material has purity greater than 99.9%. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein the metal film has a thickness of lO nm- SOO nm. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein step (3) comprises: coating positive photoresist on the metal film and after exposure and development, applying etching to the metal film to form a predetermined pattern, thereby forming the circuit pattern. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 1, wherein step (4) comprises: providing a mask, attaching the mask to a surface of the glass substrate on which the circuit pattern is formed in such a way as to expose the circuit pattern, and then forming the graphene film on the circuit pattern. Original
Canceled
A method for manufacturing a graphene composite electrode material, comprising the following steps: (1) providing a glass substrate, the glass substrate having a melting point greater than 1 100 °C; (2) washing the glass substrate and then forming a metal film on the glass substrate; (3) patterning the metal film to form a circuit pattern; and (4) forming a graphene film on the circuit pattern so as to form a graphene composite electrode material; wherein the glass substrate is a yttrium oxide based glass substrate, an aluminum oxide based glass substrate, or a silicon dioxide based glass substrate; wherein in the glass substrate, a total amount of content of alkali metals is less than 0.3ppm, zirconium content being less than or equal to 0.3ppm, titanium content being less than or equal to 1.4ppm, calcium content being less than or equal to 0.6ppm, magnesium content being less than 0.l ppm, boron content being less than 0.l ppm, copper content being less than 0.0l ppm, and phosphorus content being less than 0.2ppm; wherein in the glass substrate, lithium content is less than or equal to 0.00l ppm, potassium content being less than 0.2ppm, and sodium content being less than or equal to 0.l ppm; wherein the metal film is formed on the glass substrate by means of sputtering through physical vapor deposition with metal ruthenium as a target material; and wherein the target material has purity greater than 99.9%. Currently amended
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein the metal film has a thickness of lO nm- SOO nm. Original
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein step (3) comprises: coating positive photoresist on the metal film and after exposure and development, applying etching to the metal film to form a predetermined pattern, thereby forming the circuit pattern. Previously presented
The method for manufacturing the graphene composite electrode material as claimed in Claim 11, wherein step (4) comprises: providing a mask, attaching the mask to a surface of the glass substrate on which the circuit pattern is formed in such a way as to expose the circuit pattern, and then forming the graphene film on the circuit pattern. Original
Layer stacks claimed or described, ordered top of device to substrate.
graphene composite electrode material
Materials described outside the worked examples.
graphene film
ruthenium
Ru
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 600–1050 °C | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
metal film
yttrium oxide based glass substrate
aluminum oxide based glass substrate
silicon dioxide based glass substrate
silicon dioxide mask
SiO₂
nickel
Ni
copper
Cu
| ≥ 1100 °C |
| — |
metal film
yttrium oxide based glass substrate
aluminum oxide based glass substrate
silicon dioxide based glass substrate
silicon dioxide mask
SiO₂
nickel
Ni
copper
Cu
| ≥ 1100 °C |
| — |
metal film
yttrium oxide based glass substrate
aluminum oxide based glass substrate
silicon dioxide based glass substrate
silicon dioxide mask
SiO₂
nickel
Ni
copper
Cu
| ≥ 1100 °C |
| — |
metal film
yttrium oxide based glass substrate
aluminum oxide based glass substrate
silicon dioxide based glass substrate
silicon dioxide mask
SiO₂
nickel
Ni
copper
Cu
| ≥ 1100 °C |
| — |