Patent
METHODS FOR DIRECT PRODUCTION OF GRAPHENE ON DIELECTRIC SUBSTRATES, AND ASSOCIATED ARTICLES/DEVICES
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; exposing the substrate with the metal-inclusive catalyst layer thereon to a precursor gas and a strain-inducing gas at a temperature of no more than 900 degrees C, the strain-inducing gas inducing strain in the metal-inclusive catalyst layer; and forming and/or allowing formation of graphene, from the precursor gas, both over and contacting the metal-inclusive catalyst layer, and between the substrate and the catalyst metal- inclusive catalyst layer, as facilitated by the strain induced in the metal-inclusive catalyst la y er, in making the coated article. Currently amended
The method of claim 1, further comprising removing the catalyst layer, as well as with graphene formed thereon. Original
The method of claim 1, wherein the temperature is less than 800 degrees C. Original
The method of claim 1, wherein the temperature is less than 700 degrees C. Original
The method of claim 1, wherein the precursor gas comprises acetylene. Original
The method of claim 1, wherein the substrate with the catalyst layer thereon is exposed to at least helium and/or acetylene gasses, in plural successive stages. Original
The method of claim 1, wherein the substrate with the catalyst layer thereon is exposed to at least the strain-inducing gas and/or a carbon source gas, in one or more stages. Original
The method of claim 1, wherein the substrate is a glass substrate or a silicon wafer. Original
The method of claim 1, further comprising patterning the catalyst layer to a desired pattern, the graphene-inclusive film, once formed on the coated article, generally corresponding to the desired pattern. Original
The method of claim 1, wherein the exposing is performed at a temperature of 700-900 degrees C, the 700-900 degree C temperature being reached within two minutes. Original
A method of making an electronic device, the method comprising: providing a coated article made in accordance with the method of claim 1; and building the coated article into the device. Original
. Canceled
. Canceled
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; rapidly heating to 700-900 degrees C the substrate with the metal-inclusive catalyst layer thereon; annealing in a He gas inclusive environment, the substrate with the metal-inclusive catalyst layer thereon, the He gas being provided at a pressure selected to engineer a desired stress in the metal-inclusive catalyst layer; exposing the substrate with the catalyst layer thereon to a carbon-inclusive precursor gas; and forming and/or allowing formation of graphene, from the carbon-inclusive precursor g as, both over and contacting the metal-inclusive catalyst layer, and between the substrate and the metal-inclusive catalyst layer, as a result of the exposing and once at least some of the desired stress has been provided to the metal-inclusive catalyst la y er, in making the coated article. Currently amended
The method of claim 21, wherein the He gas induces strain in the metal-inclusive catalyst layer sufficient to cause at least partial separation between the substrate and the metal-inclusive catalyst layer during graphene formation. Original
The method of claim 21, further comprising delaminating the metal- inclusive catalyst layer and the graphene thereon through excessive strain provided by the He gas. Original
The method of claim 21, wherein the rapid heating is accomplished in no more than 1 minute, the annealing is performed for no more than 10 minutes, and the exposure to the carbon-inclusive precursor gas is performed for no more than 5 minutes. Original
The method of claim 21, wherein the rapid heating is accomplished in no more than 30 seconds, the annealing is performed for 3-7 minutes, and the exposure to the carbon-inclusive precursor gas is performed for no more than 3 minutes. Original
The method of claim 21, wherein the substrate is a silicon wafer. Original
The method of claim 21, further comprising mechanically delaminating from the substrate the metal-inclusive catalyst layer and the graphene thereon. Original
The method of claim 21, wherein the desired stress in the metal- inclusive catalyst layer that is engineered is a net compressive stress. Original
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; heating to 700-900 degrees C the substrate with the metal-inclusive catalyst layer thereon; exposing the substrate with the metal-inclusive catalyst layer thereon to a carbon- inclusive precursor gas; as a result of the exposing, forming and/or allowing formation of graphene both over and contacting the metal-inclusive catalyst layer, and between the substrate and the metal-inclusive catalyst layer; and mechanically delaminating from the substrate the metal-inclusive catalyst layer and the graphene on the metal-inclusive catalyst layer, so that the graphene formed between the substrate and the metal-inclusive catalyst layer remains on the substrate following the mechanical delaminating, in making the coated article, wherein the metal-inclusive catalyst layer is formed to have a stress that facilitates the mechanical delaminating. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
coated article with graphene-inclusive film on substrate
Materials described outside the worked examples.
metal-inclusive catalyst layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–1000 K | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; exposing the substrate with the metal-inclusive catalyst layer thereon to a precursor gas and a strain-inducing gas at a temperature of no more than 900 degrees C, the strain-inducing gas inducing strain in the metal-inclusive catalyst layer; and forming and/or allowing formation of graphene, from the precursor gas, both over and contacting the metal-inclusive catalyst layer, and between the substrate and the catalyst metal- inclusive catalyst layer, as facilitated by the strain induced in the metal-inclusive catalyst la y er, in making the coated article. Currently amended
The method of claim 1, further comprising removing the catalyst layer, as well as with graphene formed thereon. Original
The method of claim 1, wherein the temperature is less than 800 degrees C. Original
The method of claim 1, wherein the temperature is less than 700 degrees C. Original
The method of claim 1, wherein the precursor gas comprises acetylene. Original
The method of claim 1, wherein the substrate with the catalyst layer thereon is exposed to at least helium and/or acetylene gasses, in plural successive stages. Original
The method of claim 1, wherein the substrate with the catalyst layer thereon is exposed to at least the strain-inducing gas and/or a carbon source gas, in one or more stages. Original
The method of claim 1, wherein the substrate is a glass substrate or a silicon wafer. Original
The method of claim 1, further comprising patterning the catalyst layer to a desired pattern, the graphene-inclusive film, once formed on the coated article, generally corresponding to the desired pattern. Original
The method of claim 1, wherein the exposing is performed at a temperature of 700-900 degrees C, the 700-900 degree C temperature being reached within two minutes. Original
A method of making an electronic device, the method comprising: providing a coated article made in accordance with the method of claim 1; and building the coated article into the device. Original
. Canceled
. Canceled
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; rapidly heating to 700-900 degrees C the substrate with the metal-inclusive catalyst layer thereon; annealing in a He gas inclusive environment, the substrate with the metal-inclusive catalyst layer thereon, the He gas being provided at a pressure selected to engineer a desired stress in the metal-inclusive catalyst layer; exposing the substrate with the catalyst layer thereon to a carbon-inclusive precursor gas; and forming and/or allowing formation of graphene, from the carbon-inclusive precursor g as, both over and contacting the metal-inclusive catalyst layer, and between the substrate and the metal-inclusive catalyst layer, as a result of the exposing and once at least some of the desired stress has been provided to the metal-inclusive catalyst la y er, in making the coated article. Currently amended
The method of claim 21, wherein the He gas induces strain in the metal-inclusive catalyst layer sufficient to cause at least partial separation between the substrate and the metal-inclusive catalyst layer during graphene formation. Original
The method of claim 21, further comprising delaminating the metal- inclusive catalyst layer and the graphene thereon through excessive strain provided by the He gas. Original
The method of claim 21, wherein the rapid heating is accomplished in no more than 1 minute, the annealing is performed for no more than 10 minutes, and the exposure to the carbon-inclusive precursor gas is performed for no more than 5 minutes. Original
The method of claim 21, wherein the rapid heating is accomplished in no more than 30 seconds, the annealing is performed for 3-7 minutes, and the exposure to the carbon-inclusive precursor gas is performed for no more than 3 minutes. Original
The method of claim 21, wherein the substrate is a silicon wafer. Original
The method of claim 21, further comprising mechanically delaminating from the substrate the metal-inclusive catalyst layer and the graphene thereon. Original
The method of claim 21, wherein the desired stress in the metal- inclusive catalyst layer that is engineered is a net compressive stress. Original
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; heating to 700-900 degrees C the substrate with the metal-inclusive catalyst layer thereon; exposing the substrate with the metal-inclusive catalyst layer thereon to a carbon- inclusive precursor gas; as a result of the exposing, forming and/or allowing formation of graphene both over and contacting the metal-inclusive catalyst layer, and between the substrate and the metal-inclusive catalyst layer; and mechanically delaminating from the substrate the metal-inclusive catalyst layer and the graphene on the metal-inclusive catalyst layer, so that the graphene formed between the substrate and the metal-inclusive catalyst layer remains on the substrate following the mechanical delaminating, in making the coated article, wherein the metal-inclusive catalyst layer is formed to have a stress that facilitates the mechanical delaminating. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
coated article with graphene-inclusive film on substrate
Materials described outside the worked examples.
metal-inclusive catalyst layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–1000 K | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; exposing the substrate with the metal-inclusive catalyst layer thereon to a precursor gas and a strain-inducing gas at a temperature of no more than 900 degrees C, the strain-inducing gas inducing strain in the metal-inclusive catalyst layer; and forming and/or allowing formation of graphene, from the precursor gas, both over and contacting the metal-inclusive catalyst layer, and between the substrate and the catalyst metal- inclusive catalyst layer, as facilitated by the strain induced in the metal-inclusive catalyst la y er, in making the coated article. Currently amended
The method of claim 1, further comprising removing the catalyst layer, as well as with graphene formed thereon. Original
The method of claim 1, wherein the temperature is less than 800 degrees C. Original
The method of claim 1, wherein the temperature is less than 700 degrees C. Original
The method of claim 1, wherein the precursor gas comprises acetylene. Original
The method of claim 1, wherein the substrate with the catalyst layer thereon is exposed to at least helium and/or acetylene gasses, in plural successive stages. Original
The method of claim 1, wherein the substrate with the catalyst layer thereon is exposed to at least the strain-inducing gas and/or a carbon source gas, in one or more stages. Original
The method of claim 1, wherein the substrate is a glass substrate or a silicon wafer. Original
The method of claim 1, further comprising patterning the catalyst layer to a desired pattern, the graphene-inclusive film, once formed on the coated article, generally corresponding to the desired pattern. Original
The method of claim 1, wherein the exposing is performed at a temperature of 700-900 degrees C, the 700-900 degree C temperature being reached within two minutes. Original
A method of making an electronic device, the method comprising: providing a coated article made in accordance with the method of claim 1; and building the coated article into the device. Original
. Canceled
. Canceled
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; rapidly heating to 700-900 degrees C the substrate with the metal-inclusive catalyst layer thereon; annealing in a He gas inclusive environment, the substrate with the metal-inclusive catalyst layer thereon, the He gas being provided at a pressure selected to engineer a desired stress in the metal-inclusive catalyst layer; exposing the substrate with the catalyst layer thereon to a carbon-inclusive precursor gas; and forming and/or allowing formation of graphene, from the carbon-inclusive precursor g as, both over and contacting the metal-inclusive catalyst layer, and between the substrate and the metal-inclusive catalyst layer, as a result of the exposing and once at least some of the desired stress has been provided to the metal-inclusive catalyst la y er, in making the coated article. Currently amended
The method of claim 21, wherein the He gas induces strain in the metal-inclusive catalyst layer sufficient to cause at least partial separation between the substrate and the metal-inclusive catalyst layer during graphene formation. Original
The method of claim 21, further comprising delaminating the metal- inclusive catalyst layer and the graphene thereon through excessive strain provided by the He gas. Original
The method of claim 21, wherein the rapid heating is accomplished in no more than 1 minute, the annealing is performed for no more than 10 minutes, and the exposure to the carbon-inclusive precursor gas is performed for no more than 5 minutes. Original
The method of claim 21, wherein the rapid heating is accomplished in no more than 30 seconds, the annealing is performed for 3-7 minutes, and the exposure to the carbon-inclusive precursor gas is performed for no more than 3 minutes. Original
The method of claim 21, wherein the substrate is a silicon wafer. Original
The method of claim 21, further comprising mechanically delaminating from the substrate the metal-inclusive catalyst layer and the graphene thereon. Original
The method of claim 21, wherein the desired stress in the metal- inclusive catalyst layer that is engineered is a net compressive stress. Original
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; heating to 700-900 degrees C the substrate with the metal-inclusive catalyst layer thereon; exposing the substrate with the metal-inclusive catalyst layer thereon to a carbon- inclusive precursor gas; as a result of the exposing, forming and/or allowing formation of graphene both over and contacting the metal-inclusive catalyst layer, and between the substrate and the metal-inclusive catalyst layer; and mechanically delaminating from the substrate the metal-inclusive catalyst layer and the graphene on the metal-inclusive catalyst layer, so that the graphene formed between the substrate and the metal-inclusive catalyst layer remains on the substrate following the mechanical delaminating, in making the coated article, wherein the metal-inclusive catalyst layer is formed to have a stress that facilitates the mechanical delaminating. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
coated article with graphene-inclusive film on substrate
Materials described outside the worked examples.
metal-inclusive catalyst layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–1000 K | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; exposing the substrate with the metal-inclusive catalyst layer thereon to a precursor gas and a strain-inducing gas at a temperature of no more than 900 degrees C, the strain-inducing gas inducing strain in the metal-inclusive catalyst layer; and forming and/or allowing formation of graphene, from the precursor gas, both over and contacting the metal-inclusive catalyst layer, and between the substrate and the catalyst metal- inclusive catalyst layer, as facilitated by the strain induced in the metal-inclusive catalyst la y er, in making the coated article. Currently amended
The method of claim 1, further comprising removing the catalyst layer, as well as with graphene formed thereon. Original
The method of claim 1, wherein the temperature is less than 800 degrees C. Original
The method of claim 1, wherein the temperature is less than 700 degrees C. Original
The method of claim 1, wherein the precursor gas comprises acetylene. Original
The method of claim 1, wherein the substrate with the catalyst layer thereon is exposed to at least helium and/or acetylene gasses, in plural successive stages. Original
The method of claim 1, wherein the substrate with the catalyst layer thereon is exposed to at least the strain-inducing gas and/or a carbon source gas, in one or more stages. Original
The method of claim 1, wherein the substrate is a glass substrate or a silicon wafer. Original
The method of claim 1, further comprising patterning the catalyst layer to a desired pattern, the graphene-inclusive film, once formed on the coated article, generally corresponding to the desired pattern. Original
The method of claim 1, wherein the exposing is performed at a temperature of 700-900 degrees C, the 700-900 degree C temperature being reached within two minutes. Original
A method of making an electronic device, the method comprising: providing a coated article made in accordance with the method of claim 1; and building the coated article into the device. Original
. Canceled
. Canceled
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; rapidly heating to 700-900 degrees C the substrate with the metal-inclusive catalyst layer thereon; annealing in a He gas inclusive environment, the substrate with the metal-inclusive catalyst layer thereon, the He gas being provided at a pressure selected to engineer a desired stress in the metal-inclusive catalyst layer; exposing the substrate with the catalyst layer thereon to a carbon-inclusive precursor gas; and forming and/or allowing formation of graphene, from the carbon-inclusive precursor g as, both over and contacting the metal-inclusive catalyst layer, and between the substrate and the metal-inclusive catalyst layer, as a result of the exposing and once at least some of the desired stress has been provided to the metal-inclusive catalyst la y er, in making the coated article. Currently amended
The method of claim 21, wherein the He gas induces strain in the metal-inclusive catalyst layer sufficient to cause at least partial separation between the substrate and the metal-inclusive catalyst layer during graphene formation. Original
The method of claim 21, further comprising delaminating the metal- inclusive catalyst layer and the graphene thereon through excessive strain provided by the He gas. Original
The method of claim 21, wherein the rapid heating is accomplished in no more than 1 minute, the annealing is performed for no more than 10 minutes, and the exposure to the carbon-inclusive precursor gas is performed for no more than 5 minutes. Original
The method of claim 21, wherein the rapid heating is accomplished in no more than 30 seconds, the annealing is performed for 3-7 minutes, and the exposure to the carbon-inclusive precursor gas is performed for no more than 3 minutes. Original
The method of claim 21, wherein the substrate is a silicon wafer. Original
The method of claim 21, further comprising mechanically delaminating from the substrate the metal-inclusive catalyst layer and the graphene thereon. Original
The method of claim 21, wherein the desired stress in the metal- inclusive catalyst layer that is engineered is a net compressive stress. Original
A method of making a coated article comprising a graphene-inclusive film on a substrate, the method comprising: disposing a metal-inclusive catalyst layer on the substrate; heating to 700-900 degrees C the substrate with the metal-inclusive catalyst layer thereon; exposing the substrate with the metal-inclusive catalyst layer thereon to a carbon- inclusive precursor gas; as a result of the exposing, forming and/or allowing formation of graphene both over and contacting the metal-inclusive catalyst layer, and between the substrate and the metal-inclusive catalyst layer; and mechanically delaminating from the substrate the metal-inclusive catalyst layer and the graphene on the metal-inclusive catalyst layer, so that the graphene formed between the substrate and the metal-inclusive catalyst layer remains on the substrate following the mechanical delaminating, in making the coated article, wherein the metal-inclusive catalyst layer is formed to have a stress that facilitates the mechanical delaminating. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
coated article with graphene-inclusive film on substrate
Materials described outside the worked examples.
metal-inclusive catalyst layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–1000 K | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
strain-inducing gas
acetylene
C₂H₂
helium
He
glass substrate
silicon wafer
Si
nickel
Ni
indium tin oxide
ITO
fluorine-doped tin oxide
SnO2:F
| 100–1000 nm |
| — |
Pressure | 1–10 mTorr | — |
— | 5–6 eV | — |
Temperature | 0–6 K | — |
Temperature | 0.000001 K | — |
Duration | 1–3 hours | — |
— | 5000–20000 eV | — |
Duration | ≤ 30 seconds | — |
Duration | ≥ 30 seconds | — |
Duration | 3–7 minutes | — |
Duration | ≤ 1 minute | — |
Duration | ≤ 10 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≤ 3 minutes | — |
Duration | ≥ 1 minute | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 5 minutes | — |
Duration | ≥ 3 minutes | — |
METHOD FOR FORMING GRAPHENE PATTERN
strain-inducing gas
acetylene
C₂H₂
helium
He
glass substrate
silicon wafer
Si
nickel
Ni
indium tin oxide
ITO
fluorine-doped tin oxide
SnO2:F
| 100–1000 nm |
| — |
Pressure | 1–10 mTorr | — |
— | 5–6 eV | — |
Temperature | 0–6 K | — |
Temperature | 0.000001 K | — |
Duration | 1–3 hours | — |
— | 5000–20000 eV | — |
Duration | ≤ 30 seconds | — |
Duration | ≥ 30 seconds | — |
Duration | 3–7 minutes | — |
Duration | ≤ 1 minute | — |
Duration | ≤ 10 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≤ 3 minutes | — |
Duration | ≥ 1 minute | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 5 minutes | — |
Duration | ≥ 3 minutes | — |
METHOD FOR FORMING GRAPHENE PATTERN
strain-inducing gas
acetylene
C₂H₂
helium
He
glass substrate
silicon wafer
Si
nickel
Ni
indium tin oxide
ITO
fluorine-doped tin oxide
SnO2:F
| 100–1000 nm |
| — |
Pressure | 1–10 mTorr | — |
— | 5–6 eV | — |
Temperature | 0–6 K | — |
Temperature | 0.000001 K | — |
Duration | 1–3 hours | — |
— | 5000–20000 eV | — |
Duration | ≤ 30 seconds | — |
Duration | ≥ 30 seconds | — |
Duration | 3–7 minutes | — |
Duration | ≤ 1 minute | — |
Duration | ≤ 10 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≤ 3 minutes | — |
Duration | ≥ 1 minute | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 5 minutes | — |
Duration | ≥ 3 minutes | — |
METHOD FOR FORMING GRAPHENE PATTERN
strain-inducing gas
acetylene
C₂H₂
helium
He
glass substrate
silicon wafer
Si
nickel
Ni
indium tin oxide
ITO
fluorine-doped tin oxide
SnO2:F
| 100–1000 nm |
| — |
Pressure | 1–10 mTorr | — |
— | 5–6 eV | — |
Temperature | 0–6 K | — |
Temperature | 0.000001 K | — |
Duration | 1–3 hours | — |
— | 5000–20000 eV | — |
Duration | ≤ 30 seconds | — |
Duration | ≥ 30 seconds | — |
Duration | 3–7 minutes | — |
Duration | ≤ 1 minute | — |
Duration | ≤ 10 minutes | — |
Duration | ≤ 5 minutes | — |
Duration | ≤ 3 minutes | — |
Duration | ≥ 1 minute | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 5 minutes | — |
Duration | ≥ 3 minutes | — |
METHOD FOR FORMING GRAPHENE PATTERN