Patent
US 9,214,338METHOD OF MAKING GRAPHENE LAYERS, AND ARTICLES MADE THEREBY
Ashok J. MALIAKAL
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,214,338Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic representation of the atomic arrangement in a graphene monolayer. [0013]
FIG. 2 is a schematic depiction of one unit of a SAM at the molecular level. [0014]
FIG. 3 is a flowchart of an illustrative process for synthesizing a graphene layer according to an embodiment of the invention. [0015]
FIG. 4 is a schematic drawing illustrating progressive stages of the process of
FIG. 5 is a schematic drawing illustrating the doping of a graphene layer. [0017]
FIG. 6 is a schematic drawing illustrating progressive stages of a process for forming a patterned graphene layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; and heating the SAM layer to convert it to a layer of graphene, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions.
The method of claim 1, wherein the depositing step includes transferring at least one of the amphiphilic compounds onto the substrate by microcontact printing. 2 U.S. App l. No. 14/693,670 Patent Docket No. 46850.21721
The A method of claim 1 comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; and heating the SAM layer to convert it to a layer of graphene, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one dopant gradient is formed between the graphene regions.
An article formed by the method of claim 1.
The method of claim 1, further comprising: applying nickel on the SAM layer.
The method of claim 1, wherein the depositing step is spatially selective on the substrate.
The method of claim 1, further comprising: removing the substrate from the graphene layer.
The method of claim 1, wherein the amphiphilic compounds are selected from boron-containing surfactants, nitrogen-containing surfactants, and combinations thereof.
The method of claim 1, wherein at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions.
The method of claim [[1]] 5, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions.
The method of claim 2, wherein at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions.
A method comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; an heating the SAM layer to convert it to a layer of graphene, wherein the amphiphilic compounds are selected from boron-containing surfactants, nitrogen-containing surfactants, and combinations thereof.
The method of claim 16, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions, at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions. 4 U.S. App l. No. 14/693,670 Patent Docket No. 46850.21721
The method of claim 16, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one dopant gradient is formed between the graphene regions.
The method of claim 16, the amphiphilic compounds are selected from borate esters, boronic acids, amines and combinations thereof.
Layer stacks claimed or described, ordered top of device to substrate.
graphene p-n (or p-i or n-i) semiconductor junction
Materials described outside the worked examples.
amphiphilic compound (SAM precursor)
doped amphiphilic compound (n-type or p-type dopant-containing)
graphene
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,214,338Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic representation of the atomic arrangement in a graphene monolayer. [0013]
FIG. 2 is a schematic depiction of one unit of a SAM at the molecular level. [0014]
FIG. 3 is a flowchart of an illustrative process for synthesizing a graphene layer according to an embodiment of the invention. [0015]
FIG. 4 is a schematic drawing illustrating progressive stages of the process of
FIG. 5 is a schematic drawing illustrating the doping of a graphene layer. [0017]
FIG. 6 is a schematic drawing illustrating progressive stages of a process for forming a patterned graphene layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; and heating the SAM layer to convert it to a layer of graphene, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions.
The method of claim 1, wherein the depositing step includes transferring at least one of the amphiphilic compounds onto the substrate by microcontact printing. 2 U.S. App l. No. 14/693,670 Patent Docket No. 46850.21721
The A method of claim 1 comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; and heating the SAM layer to convert it to a layer of graphene, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one dopant gradient is formed between the graphene regions.
An article formed by the method of claim 1.
The method of claim 1, further comprising: applying nickel on the SAM layer.
The method of claim 1, wherein the depositing step is spatially selective on the substrate.
The method of claim 1, further comprising: removing the substrate from the graphene layer.
The method of claim 1, wherein the amphiphilic compounds are selected from boron-containing surfactants, nitrogen-containing surfactants, and combinations thereof.
The method of claim 1, wherein at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions.
The method of claim [[1]] 5, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions.
The method of claim 2, wherein at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions.
A method comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; an heating the SAM layer to convert it to a layer of graphene, wherein the amphiphilic compounds are selected from boron-containing surfactants, nitrogen-containing surfactants, and combinations thereof.
The method of claim 16, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions, at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions. 4 U.S. App l. No. 14/693,670 Patent Docket No. 46850.21721
The method of claim 16, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one dopant gradient is formed between the graphene regions.
The method of claim 16, the amphiphilic compounds are selected from borate esters, boronic acids, amines and combinations thereof.
Layer stacks claimed or described, ordered top of device to substrate.
graphene p-n (or p-i or n-i) semiconductor junction
Materials described outside the worked examples.
amphiphilic compound (SAM precursor)
doped amphiphilic compound (n-type or p-type dopant-containing)
graphene
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,214,338Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic representation of the atomic arrangement in a graphene monolayer. [0013]
FIG. 2 is a schematic depiction of one unit of a SAM at the molecular level. [0014]
FIG. 3 is a flowchart of an illustrative process for synthesizing a graphene layer according to an embodiment of the invention. [0015]
FIG. 4 is a schematic drawing illustrating progressive stages of the process of
FIG. 5 is a schematic drawing illustrating the doping of a graphene layer. [0017]
FIG. 6 is a schematic drawing illustrating progressive stages of a process for forming a patterned graphene layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; and heating the SAM layer to convert it to a layer of graphene, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions.
The method of claim 1, wherein the depositing step includes transferring at least one of the amphiphilic compounds onto the substrate by microcontact printing. 2 U.S. App l. No. 14/693,670 Patent Docket No. 46850.21721
The A method of claim 1 comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; and heating the SAM layer to convert it to a layer of graphene, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one dopant gradient is formed between the graphene regions.
An article formed by the method of claim 1.
The method of claim 1, further comprising: applying nickel on the SAM layer.
The method of claim 1, wherein the depositing step is spatially selective on the substrate.
The method of claim 1, further comprising: removing the substrate from the graphene layer.
The method of claim 1, wherein the amphiphilic compounds are selected from boron-containing surfactants, nitrogen-containing surfactants, and combinations thereof.
The method of claim 1, wherein at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions.
The method of claim [[1]] 5, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions.
The method of claim 2, wherein at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions.
A method comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; an heating the SAM layer to convert it to a layer of graphene, wherein the amphiphilic compounds are selected from boron-containing surfactants, nitrogen-containing surfactants, and combinations thereof.
The method of claim 16, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions, at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions. 4 U.S. App l. No. 14/693,670 Patent Docket No. 46850.21721
The method of claim 16, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one dopant gradient is formed between the graphene regions.
The method of claim 16, the amphiphilic compounds are selected from borate esters, boronic acids, amines and combinations thereof.
Layer stacks claimed or described, ordered top of device to substrate.
graphene p-n (or p-i or n-i) semiconductor junction
Materials described outside the worked examples.
amphiphilic compound (SAM precursor)
doped amphiphilic compound (n-type or p-type dopant-containing)
graphene
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,214,338Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic representation of the atomic arrangement in a graphene monolayer. [0013]
FIG. 2 is a schematic depiction of one unit of a SAM at the molecular level. [0014]
FIG. 3 is a flowchart of an illustrative process for synthesizing a graphene layer according to an embodiment of the invention. [0015]
FIG. 4 is a schematic drawing illustrating progressive stages of the process of
FIG. 5 is a schematic drawing illustrating the doping of a graphene layer. [0017]
FIG. 6 is a schematic drawing illustrating progressive stages of a process for forming a patterned graphene layer.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; and heating the SAM layer to convert it to a layer of graphene, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions.
The method of claim 1, wherein the depositing step includes transferring at least one of the amphiphilic compounds onto the substrate by microcontact printing. 2 U.S. App l. No. 14/693,670 Patent Docket No. 46850.21721
The A method of claim 1 comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; and heating the SAM layer to convert it to a layer of graphene, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one dopant gradient is formed between the graphene regions.
An article formed by the method of claim 1.
The method of claim 1, further comprising: applying nickel on the SAM layer.
The method of claim 1, wherein the depositing step is spatially selective on the substrate.
The method of claim 1, further comprising: removing the substrate from the graphene layer.
The method of claim 1, wherein the amphiphilic compounds are selected from boron-containing surfactants, nitrogen-containing surfactants, and combinations thereof.
The method of claim 1, wherein at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions.
The method of claim [[1]] 5, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions.
The method of claim 2, wherein at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions.
A method comprising: depositing a layer of amphiphilic compounds having two or more different chemical compositions onto a substrate; allowing the layer to self-assemble into a self-assembled monolayer (SAM) onto two or more regions of the substrate, each region including one of the amphiphilic compounds; an heating the SAM layer to convert it to a layer of graphene, wherein the amphiphilic compounds are selected from boron-containing surfactants, nitrogen-containing surfactants, and combinations thereof.
The method of claim 16, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, at least one p-n, p-i, or n-i semiconductor junction is formed between the graphene regions, at least one of the amphiphilic compounds comprises an n-type dopant element, at least one of the other amphiphilic compounds comprises a p-type dopant element, and at least one p-n semiconductor junction is formed between the graphene regions. 4 U.S. App l. No. 14/693,670 Patent Docket No. 46850.21721
The method of claim 16, wherein at least one of the amphiphilic compounds comprises an n-type or p-type dopant element, and at least one dopant gradient is formed between the graphene regions.
The method of claim 16, the amphiphilic compounds are selected from borate esters, boronic acids, amines and combinations thereof.
Layer stacks claimed or described, ordered top of device to substrate.
graphene p-n (or p-i or n-i) semiconductor junction
Materials described outside the worked examples.
amphiphilic compound (SAM precursor)
doped amphiphilic compound (n-type or p-type dopant-containing)
graphene
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
nickel
Ni
boron-containing surfactant
nitrogen-containing surfactant
borate ester
boronic acid
amine
alkyl trichlorosilane
silicon dioxide substrate
SiO₂
alkyltrialkoxysilane (C₆-C₁₈)
nickel
Ni
boron-containing surfactant
nitrogen-containing surfactant
borate ester
boronic acid
amine
alkyl trichlorosilane
silicon dioxide substrate
SiO₂
alkyltrialkoxysilane (C₆-C₁₈)
nickel
Ni
boron-containing surfactant
nitrogen-containing surfactant
borate ester
boronic acid
amine
alkyl trichlorosilane
silicon dioxide substrate
SiO₂
alkyltrialkoxysilane (C₆-C₁₈)
nickel
Ni
boron-containing surfactant
nitrogen-containing surfactant
borate ester
boronic acid
amine
alkyl trichlorosilane
silicon dioxide substrate
SiO₂
alkyltrialkoxysilane (C₆-C₁₈)