Patent
US 8,927,057GRAPHENE FORMATION UTILIZING SOLID PHASE CARBON SOURCES
Ageeth A. Bol
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,927,057Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 0 C to 1400 0 C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface.
The method of claim 1 wherein said carbon includes sputtered carbon.
The method of claim 1 wherein said graphene layer on said upper surface comprises at least one of single layer graphene, few-layer graphene, multi-layer graphene, a mixture of single-layer, few-layer and multi-layer graphene, any combination of graphene layers mixed with an amorphous carbon phase and any combination of graphene layers mixed with a disordered carbon phase.
The method of claim 1 wherein said ambient is selected from the group consisting of vacuum, Ar/H 2, N 2/H2, N 2, Ar, He, and mixtures thereof.
The method of claim 1 wherein said metal includes one or more elements selected from the group consisting of Co, Cu, Fe, Ir, Mo, Ni, Pd, Pt, Ru and alloys thereof.
The method of claim 1 wherein said first layer including carbon is selected from the group consisting of amorphous carbon, amorphous hydrogenated carbon containing greater than atomic percent C, amorphous hydrogenated carbon containing less than 20 atomic percent H, carbon-containing polymers, carbon-containing materials comprising at least one element selected from the group consisting of Si, O, N and H and carbon-metal alloys containing less than atomic percent of metal.
The method of claim 1 wherein said temperature is in the range from 850 ° C to 1050 °C.
The method of claim 1 wherein said first layer has a thickness in the range from 0.5 nm to 50 nm.
The method of claim 1 wherein said second layer has a thickness in the range from 10 nm to 5000 nm.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 0 C to 1400 0C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said metal includes Ni and alloys of Ni.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said selected substrate structure further includes a third layer including a metal under said first layer.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and 3 providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said carbon-containing first layer is patterned, said second layer including metal is a blanket layer.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said carbon-containing first layer is a blanket layer, said second layer
Layer stacks claimed or described, ordered top of device to substrate.
graphene formation substrate stack (carbon/metal bilayer)
graphene formation substrate stack (metal/carbon/metal trilayer)
Materials described outside the worked examples.
carbon layer (first layer)
C
metal layer (second layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
In situ XRD during heat treatment used to detect formation of graphitic carbon/graphene; strong 002 reflection corresponding to d-spacing of 0.34 nm used as indicator of graphene formation
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene 002 reflection d-spacing | 0.34 nm | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,927,057Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 0 C to 1400 0 C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface.
The method of claim 1 wherein said carbon includes sputtered carbon.
The method of claim 1 wherein said graphene layer on said upper surface comprises at least one of single layer graphene, few-layer graphene, multi-layer graphene, a mixture of single-layer, few-layer and multi-layer graphene, any combination of graphene layers mixed with an amorphous carbon phase and any combination of graphene layers mixed with a disordered carbon phase.
The method of claim 1 wherein said ambient is selected from the group consisting of vacuum, Ar/H 2, N 2/H2, N 2, Ar, He, and mixtures thereof.
The method of claim 1 wherein said metal includes one or more elements selected from the group consisting of Co, Cu, Fe, Ir, Mo, Ni, Pd, Pt, Ru and alloys thereof.
The method of claim 1 wherein said first layer including carbon is selected from the group consisting of amorphous carbon, amorphous hydrogenated carbon containing greater than atomic percent C, amorphous hydrogenated carbon containing less than 20 atomic percent H, carbon-containing polymers, carbon-containing materials comprising at least one element selected from the group consisting of Si, O, N and H and carbon-metal alloys containing less than atomic percent of metal.
The method of claim 1 wherein said temperature is in the range from 850 ° C to 1050 °C.
The method of claim 1 wherein said first layer has a thickness in the range from 0.5 nm to 50 nm.
The method of claim 1 wherein said second layer has a thickness in the range from 10 nm to 5000 nm.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 0 C to 1400 0C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said metal includes Ni and alloys of Ni.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said selected substrate structure further includes a third layer including a metal under said first layer.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and 3 providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said carbon-containing first layer is patterned, said second layer including metal is a blanket layer.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said carbon-containing first layer is a blanket layer, said second layer
Layer stacks claimed or described, ordered top of device to substrate.
graphene formation substrate stack (carbon/metal bilayer)
graphene formation substrate stack (metal/carbon/metal trilayer)
Materials described outside the worked examples.
carbon layer (first layer)
C
metal layer (second layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
In situ XRD during heat treatment used to detect formation of graphitic carbon/graphene; strong 002 reflection corresponding to d-spacing of 0.34 nm used as indicator of graphene formation
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene 002 reflection d-spacing | 0.34 nm | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,927,057Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 0 C to 1400 0 C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface.
The method of claim 1 wherein said carbon includes sputtered carbon.
The method of claim 1 wherein said graphene layer on said upper surface comprises at least one of single layer graphene, few-layer graphene, multi-layer graphene, a mixture of single-layer, few-layer and multi-layer graphene, any combination of graphene layers mixed with an amorphous carbon phase and any combination of graphene layers mixed with a disordered carbon phase.
The method of claim 1 wherein said ambient is selected from the group consisting of vacuum, Ar/H 2, N 2/H2, N 2, Ar, He, and mixtures thereof.
The method of claim 1 wherein said metal includes one or more elements selected from the group consisting of Co, Cu, Fe, Ir, Mo, Ni, Pd, Pt, Ru and alloys thereof.
The method of claim 1 wherein said first layer including carbon is selected from the group consisting of amorphous carbon, amorphous hydrogenated carbon containing greater than atomic percent C, amorphous hydrogenated carbon containing less than 20 atomic percent H, carbon-containing polymers, carbon-containing materials comprising at least one element selected from the group consisting of Si, O, N and H and carbon-metal alloys containing less than atomic percent of metal.
The method of claim 1 wherein said temperature is in the range from 850 ° C to 1050 °C.
The method of claim 1 wherein said first layer has a thickness in the range from 0.5 nm to 50 nm.
The method of claim 1 wherein said second layer has a thickness in the range from 10 nm to 5000 nm.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 0 C to 1400 0C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said metal includes Ni and alloys of Ni.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said selected substrate structure further includes a third layer including a metal under said first layer.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and 3 providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said carbon-containing first layer is patterned, said second layer including metal is a blanket layer.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said carbon-containing first layer is a blanket layer, said second layer
Layer stacks claimed or described, ordered top of device to substrate.
graphene formation substrate stack (carbon/metal bilayer)
graphene formation substrate stack (metal/carbon/metal trilayer)
Materials described outside the worked examples.
carbon layer (first layer)
C
metal layer (second layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
In situ XRD during heat treatment used to detect formation of graphitic carbon/graphene; strong 002 reflection corresponding to d-spacing of 0.34 nm used as indicator of graphene formation
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene 002 reflection d-spacing | 0.34 nm | C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,927,057Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 0 C to 1400 0 C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface.
The method of claim 1 wherein said carbon includes sputtered carbon.
The method of claim 1 wherein said graphene layer on said upper surface comprises at least one of single layer graphene, few-layer graphene, multi-layer graphene, a mixture of single-layer, few-layer and multi-layer graphene, any combination of graphene layers mixed with an amorphous carbon phase and any combination of graphene layers mixed with a disordered carbon phase.
The method of claim 1 wherein said ambient is selected from the group consisting of vacuum, Ar/H 2, N 2/H2, N 2, Ar, He, and mixtures thereof.
The method of claim 1 wherein said metal includes one or more elements selected from the group consisting of Co, Cu, Fe, Ir, Mo, Ni, Pd, Pt, Ru and alloys thereof.
The method of claim 1 wherein said first layer including carbon is selected from the group consisting of amorphous carbon, amorphous hydrogenated carbon containing greater than atomic percent C, amorphous hydrogenated carbon containing less than 20 atomic percent H, carbon-containing polymers, carbon-containing materials comprising at least one element selected from the group consisting of Si, O, N and H and carbon-metal alloys containing less than atomic percent of metal.
The method of claim 1 wherein said temperature is in the range from 850 ° C to 1050 °C.
The method of claim 1 wherein said first layer has a thickness in the range from 0.5 nm to 50 nm.
The method of claim 1 wherein said second layer has a thickness in the range from 10 nm to 5000 nm.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 0 C to 1400 0C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said metal includes Ni and alloys of Ni.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said selected substrate structure further includes a third layer including a metal under said first layer.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and 3 providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said carbon-containing first layer is patterned, said second layer including metal is a blanket layer.
(Previously amended) A method for forming a graphene layer comprising: selecting a substrate having a first layer including carbon and a second layer including a metal over said first layer, said second layer having an upper surface, providing an ambient, and providing a heat treatment to said substrate in said ambient wherein said heat treatment includes heating to a temperature in the range from 550 ° C to 1400 ° C whereby at least some of said carbon in said first layer passes through said second layer to said upper surface and forms said graphene layer on said upper surface wherein said carbon-containing first layer is a blanket layer, said second layer
Layer stacks claimed or described, ordered top of device to substrate.
graphene formation substrate stack (carbon/metal bilayer)
graphene formation substrate stack (metal/carbon/metal trilayer)
Materials described outside the worked examples.
carbon layer (first layer)
C
metal layer (second layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
In situ XRD during heat treatment used to detect formation of graphitic carbon/graphene; strong 002 reflection corresponding to d-spacing of 0.34 nm used as indicator of graphene formation
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene 002 reflection d-spacing | 0.34 nm | C |
Related documents with shared materials, methods, properties, or citations.
Ni and alloys of Ni
Ni
amorphous carbon
a-C
silicon dioxide
SiO₂
Si substrate
Si
| 0.5–50 nm |
| — |
Thickness | 10–1000 nm | — |
Pressure | 10–200 mTorr | — |
Temperature | 550–1400 °C | — |
Temperature | 850–1050 °C | — |
Temperature | 550–750 °C | — |
Temperature | 900–1000 °C | — |
Thickness | 50–5000 nm | — |
Thickness | 10–5000 nm | — |
METHOD FOR PREPARING THREE-DIMENSIONAL POROUS GRAPHENE MATERIAL
Ni and alloys of Ni
Ni
amorphous carbon
a-C
silicon dioxide
SiO₂
Si substrate
Si
| 0.5–50 nm |
| — |
Thickness | 10–1000 nm | — |
Pressure | 10–200 mTorr | — |
Temperature | 550–1400 °C | — |
Temperature | 850–1050 °C | — |
Temperature | 550–750 °C | — |
Temperature | 900–1000 °C | — |
Thickness | 50–5000 nm | — |
Thickness | 10–5000 nm | — |
METHOD FOR PREPARING THREE-DIMENSIONAL POROUS GRAPHENE MATERIAL
Ni and alloys of Ni
Ni
amorphous carbon
a-C
silicon dioxide
SiO₂
Si substrate
Si
| 0.5–50 nm |
| — |
Thickness | 10–1000 nm | — |
Pressure | 10–200 mTorr | — |
Temperature | 550–1400 °C | — |
Temperature | 850–1050 °C | — |
Temperature | 550–750 °C | — |
Temperature | 900–1000 °C | — |
Thickness | 50–5000 nm | — |
Thickness | 10–5000 nm | — |
METHOD FOR PREPARING THREE-DIMENSIONAL POROUS GRAPHENE MATERIAL
Ni and alloys of Ni
Ni
amorphous carbon
a-C
silicon dioxide
SiO₂
Si substrate
Si
| 0.5–50 nm |
| — |
Thickness | 10–1000 nm | — |
Pressure | 10–200 mTorr | — |
Temperature | 550–1400 °C | — |
Temperature | 850–1050 °C | — |
Temperature | 550–750 °C | — |
Temperature | 900–1000 °C | — |
Thickness | 50–5000 nm | — |
Thickness | 10–5000 nm | — |